Abstract: A method for fabricating metal decorations on a domed dial made of insulating material, wherein the method includes the steps of forming a photosensitive resin mould by a UV LIGA type process, and electrodepositing a layer of at least one metal starting from the conductive layer to form a block, which substantially reaches the upper surface of the photosensitive resin.

Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

Abstract: Provided are: a production method for silver fine particles that retain capabilities such as conductivity and make it possible to form wiring at even lower temperatures; and silver fine particles. A silver fine particle production method in which silver powder is used to produce silver fine particles by means of a gas phase method. The silver fine particle production method has a step for supplying an organic acid to the silver fine particles. The gas phase method is, for example, a plasma method or a flame method. The silver fine particles have a surface coating that includes at least a carboxyl group.

Abstract: A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.

Abstract: A radio frequency plasma processing system including a reaction chamber, a pedestal disposed in the reaction chamber, and a plurality of sector plates disposed azimuthally around the pedestal in an annulus between the pedestal and the reaction chamber.

Abstract: There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

Abstract: In accordance with an embodiment, a method of plasma processing includes etching a refractory metal by flowing oxygen into a plasma processing chamber, intermittently flowing a passivation gas into the plasma processing chamber, and supplying power to sustain a plasma in the plasma processing chamber.

Abstract: Methods and apparatus for processing a substrate positioned on a substrate support assembly are provided. For example, a substrate support assembly includes an electrostatic chuck having one or more chucking electrodes embedded therein for chucking a substrate to a substrate support surface of the electrostatic chuck; an edge ring disposed on the electrostatic chuck and surrounding the substrate support strike; two or more radio frequency (RF) power sources coupled to the edge ring and at least one of a baseplate disposed beneath the electrostatic chuck or an electrode disposed in the electrostatic chuck; a matching network coupling the edge ring to the two or more RF power sources; and an RF circuit coupling the edge ring to the two or more RF power sources, the RF circuit configured to simultaneously tune at least one of an RF amplitude or an RF phase of respective signals of the two or more RF power sources.

Abstract: A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.

Abstract: Examples of a substrate processing apparatus include a signal transmitter that outputs a command signal, and an RF generator that receives the command signal, starts to output traveling wave power simultaneously with a first transition of the command signal, measures a delay time, which is a time period after the first transition of the command signal until a predetermined power-applied state is achieved on a receiving side of the traveling wave power, and stops outputting the traveling wave power when the delay time elapses after a second transition of the command signal.

Abstract: Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

Abstract: The reactive ion etching apparatus of this invention has a stage provided with an electrostatic chuck having a pair of electrodes. At the time of etching a to-be-processed substrate, by applying DC voltage to the pair of electrodes, the to-be-processed substrate is electrostatically absorbed to the electrostatic chuck. In this reactive ion etching apparatus, a radio-frequency power source connected to the stage, through a first output line, applies bias potential to the to-be-processed substrate. The radio-frequency power source is also arranged to be connected through a second output line to the pair of electrodes so as to apply radio-frequency potential in a manner to be superposed on the DC voltage. The first capacitor and the second capacitor are respectively interposed in the first output line and the second output line. A capacitance ratio of the first capacitor to the second capacitor is set to a range of 2.5 to 25.

Abstract: A substrate holder includes a base plate, a bond layer disposed over the base plate, and a ceramic layer disposed over the bond layer. The ceramic layer has a top surface including an area configured to support a substrate. A number of temperature measurement electrical devices are attached to the ceramic layer. Electrically conductive traces are embedded within the ceramic layer and positioned and routed to electrically connect with one or more of electrical contacts of the number of temperature measurement electrical devices. Electrical wires are disposed to electrically contact the electrically conductive traces. The electrical wires extend from the ceramic layer through the bond layer and through the base plate to a control circuit.

Abstract: The invention relates to a treatment device for a surface to be treated using a dialectically impeded plasma, comprising a housing (1) which has an end wall (14, 14?) and comprising an electrode (18, 33) which is shielded from the surface to be treated by a dielectricum (19, 34) that forms at least one part of the end wall (14, 14?) and which can be connected to a high-voltage generator (17). The end wall (14, 14?) has at least one spacer (29, 29?) by means of which at least one gas chamber is formed when the at least one spacer (29, 29?) rests against the surface to be treated, and the dialectically impeded plasma is formed in the gas chamber for the treatment process.

Abstract: A chamber is provided. The chamber includes a Faraday shield positioned above a substrate support of the chamber. A dielectric window is disposed over the Faraday shield, and the dielectric window has a center opening. A hub having an internal plenum for passing a flow of fluid received from an input conduit and removing the flow of fluid from an output conduit is further provided. The hub has sidewalls and a center cavity inside of the sidewalls for an optical probe, and the internal plenum is disposed in the sidewalls. The hub has an interface surface that is in physical contact with a back side of the Faraday shield. The physical contact provides for a thermal couple to the Faraday shield at a center region around said center opening, and an outer surface of the sidewalls of the hub are disposed within the center opening of the dielectric window.

Abstract: Disclosed herein is a wafer unloading method for unloading a wafer from an electrostatic chuck table electrostatically holding the wafer by applying a voltage to the electrostatic chuck table. The wafer unloading method includes a voltage application stopping step of stopping the application of the voltage to the electrostatic chuck table electrostatically holding the wafer, a static eliminating voltage applying step of passing a current reverse in direction to a current passed to the electrostatic chuck table for electrostatically holding the wafer after performing the voltage application stopping step, thereby applying a static eliminating voltage for canceling peeling electrification to the electrostatic chuck table, and an unholding step of unholding the wafer from the electrostatic chuck table in the condition where the static eliminating voltage is kept applied to the electrostatic chuck table, after performing the static eliminating voltage applying step.

Abstract: According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.

Abstract: Certain embodiments described herein are directed to induction devices that can be used to sustain a plasma. In certain configurations, the induction device may comprise one or more radial fins electrically coupled to a base. The induction device may take numerous forms including, for example, coils and plate electrodes.

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Abstract: An apparatus for large area plasma processing according to the invention comprises at least one plane antenna (A) having a plurality of interconnected elementary resonant meshes (M1, M2, M3), each mesh (M1, M2, M3) comprising at least two conductive legs (1, 2) and at least two capacitors (5, 6). A radiofrequency generator excites said antenna (A) to at least one of its resonant frequencies. A process chamber is in proximity of said antenna (A). Said antenna (A) produces an electromagnetic field pattern with a very well defined spatial structure, which allows a great control on the excitation of the plasma.

Abstract: An inspection apparatus includes a supporting substrate. A first sensor unit is provided on the supporting substrate, the first sensor unit comprising a first light-emitting device and a first light-receiving device which are spaced apart from each other and face each other. A second sensor unit is provided on the supporting substrate, the second sensor unit comprising a second light-emitting device and a second light-receiving device which are spaced apart from each other and face each other. The first and second light-emitting devices and the first and second light-receiving devices are disposed at a same distance from a top surface of the supporting substrate. The first and second sensor units are configured to detect whether a robot hand moves in a first direction perpendicular to the top surface of the supporting substrate.

Abstract: A detection device, which is used with a mobile electronic device having an image capturing unit, is provided. The detection device includes a plasma generation unit and a light decomposing unit. The plasma generation unit generates plasma from a sample. The light decomposing unit decomposes light emitted by the plasma for spectral analysis. The mobile electronic device receives and analyzes the light decomposed by the light decomposing unit to determine whether an element exist in the sample.

Abstract: Certain embodiments described herein are directed to induction devices that can be used to sustain a plasma. In certain configurations, the induction device may comprise one or more radial fins electrically coupled to a base. The induction device may take numerous forms including, for example, coils and plate electrodes.

Abstract: Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

Abstract: A method of frequency tuning an electrical generator for supplying electrical power to a plasma is provided. Also provided is a plasma processing system and a computer program product. The method, the electrical generator, the plasma processing system, and the computer program product may have the advantage that the stability of the plasma with respect to repeated and essentially identical high and low power pulses is used to reduce the controlling effort and to check the stability of the plasma process.

Abstract: A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a RF antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.

Abstract: Certain embodiments described herein are directed to induction devices that can be used to sustain a plasma. In certain configurations, the induction device may comprise one or more radial fins electrically coupled to a base. The induction device may take numerous forms including, for example, coils and plate electrodes.

Abstract: A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

Abstract: Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

Abstract: To provide a plasma processing device and a plasma processing method capable of performing high-speed processing. In an inductively-coupled plasma torch unit, a coil, a lid and a first ceramic block are bonded together, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. The first ceramic block is cooled efficiently by allowing a refrigerant to flow in a refrigerant flow path.

Abstract: Systems and methods for determining an RF transmission line model for an RF transmission system includes generating a baseline RF transmission line model characterizing the RF transmission system. A plasma RF voltage, RF current, RF power and/or a corresponding RF induced DC bias voltage is calculated from the baseline RF transmission line model. An end module including the electrostatic chuck, a plasma and an RF return path is added to the baseline RF transmission line model to create one or more revised RF transmission line models. A revised plasma RF voltage, a revised plasma RF current, a revised plasma RF power and/or a corresponding revised RF induced DC bias voltage is calculated from each of the revised baseline RF transmission line models. The revised RF transmission line models are scored to identify a best fitting revised RF transmission line model as a complete RF transmission line model.

Abstract: In a plasma processing apparatus, first to third RF power monitors 94, 94 and 98 are configured to monitor high frequency powers (progressive wave powers), which propagate on first to third high frequency power supply lines 88, 90 and 92 from first to third high frequency power supplies 36, 38 and 40 toward a load side, respectively, and high frequency powers (reflection wave powers), which propagate on the first high frequency power supply lines 88, 90 and 92 from the load side toward the first to third high frequency power supplies 36, 38 and 40, respectively, at the same time. A main controller 82 is configured to control the high frequency power supplies 36, 38 and 40 and matching devices 42, 44 and 46 based on monitoring information sent from RF power monitors 94, 96 and 98.

Abstract: Certain embodiments described herein are directed to induction devices that can be used to sustain a plasma. In certain configurations, the induction device may comprise one or more radial fins electrically coupled to a base. The induction device may take numerous forms including, for example, coils and plate electrodes.

Abstract: Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction.

Abstract: A system for transferring electrical energy to thermal energy which comprises two electrodes separated by a distance along the axis joining them and able to create field lines defining a zone of influence when subjected to a potential difference, an electrical power supply device for these electrodes, which is able to provide the potential difference, and a device for triggering an electric arc between these two electrodes. The triggering device comprises a device for emitting a laser pulse, a device for focusing the pulse at N focusing points situated in the zone of influence of the two electrodes, with a peak power density of the pulse per focusing point of greater than 1 GW/cm2, N being determined as a function of the peak power of the pulse and of the distance d which is fixed, so as to form an electrically conducting zone between the two electrodes.

Abstract: A method of manufacturing an EL display device having a panel part includes a step of forming film of an element constituting the panel part, by using a vapor deposition equipment. The vapor deposition equipment is equipped with crucible configured to accommodate vapor deposition material, metal case configured to dispose the crucible therein, and heater configured to heat vapor deposition material in the crucible. Case includes container and lid. Container is configured to accommodate crucible with a gap between the container and crucible. Lid is configured to be removably attached to an opening of container, and includes a jetting port through which vapors of vapor deposition material jet out.

Abstract: An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose characteristic variation is small in the long term. A cation containing one or more elements selected from oxygen and halogen is added to an oxide semiconductor layer, thereby suppressing elimination of oxygen, reducing hydrogen, or suppressing movement of hydrogen. Accordingly, carriers in the oxide semiconductor can be reduced and the number of the carriers can be kept constant in the long term. As a result, the semiconductor device including the normally-off oxide semiconductor element whose characteristic variation is small in the long term can be provided.

Abstract: A point of use irrigation water fertigation system utilizes plasma production of nitrogen-bearing species. Soluble nitrogen-bearing species are generated using an atmospheric air plasma treatment of an irrigation water supply. A plasma is generated by a tube having an air intake. A high frequency generator generates atmospheric plasma. The end of the tube is placed above the surface of the irrigation water supply and the plasma emanating from the tube generates nitrogen species in the water. The non-thermal plasma discharge efficiently produces highly reactive radicals and NOx species that have impact on water chemistry including inactivation of microorganisms with high efficacy and accelerated removal of persistent organic pollutants such as perfluorinated compounds (PFCs) from water samples. Plasma ignition can be initiated with a low flow of helium gas injection. Upon ignition, the gas is transitioned to a helium/room air mix, immediately followed by a transition to ambient room air only.

Abstract: An antenna feed with mode suppression includes a transition section, having a window for connecting to an output port of a waveguide and having inner and outer conductors forming a coaxial waveguide that couples energy from the waveguide into a horizontal TE11 mode in the coaxial waveguide. A polarizer section is coupled to the transition section and generates circular polarization from the horizontal mode of the transition section. A radiator section is coupled to the polarizer and provides an output signal for the antenna feed. The transition section includes an electrical short coupling the inner and outer conductors. The electrical short is disposed adjacent to the window of the transition section. A dielectric block is also disposed between the inner and outer conductors and adjacent to the electrical short along the axis of the coaxial waveguide. A surface of the dielectric block is coated with a thin film sheet resistance.

Abstract: There is provided plasma equipment including a power supply that supplies a RF power; a chamber in which plasma is generated, and a processing target to processed by the plasma is provided; an antenna coil that is provided on a top surface of the chamber, and is connected to the power supply to receive the RF power; and a resonance coil that is provided to be electrically insulated or cut off from the antenna coil. The resonance coil receives electromagnetic energy applied from the antenna coil to allow a current to flow, and the plasma is generated within the chamber. It is possible to increase the degree of freedom for an installation position of the resonance coil, and it is possible to increase plasma density.

Abstract: Certain embodiments described herein are directed to induction devices comprising an oxidation resistant material. In certain examples, the induction device comprises a coil of wire that is produced from the oxidation resistant material. In some examples, the oxidation resistant induction device can be used to sustain an inductively coupled plasma in a torch.

Abstract: Systems and methods are provided for matching the impedance of a load to an impedance of a power generator. Embodiments include a matching network with a dynamically configurable component assembly array couplable to the variable impedance load and the RF power generator, wherein the component assembly array includes one or more tune and load electrical components. The component assembly array is adapted to be configured for each recipe step, and at least one of the electrical components is a variable impedance component adjustable to reduce RF energy reflected from the variable impedance load for each recipe step. Numerous other aspects are provided.

Abstract: A microwave heating apparatus for heating a load by means of microwaves is provided. The microwave heating apparatus has a cavity arranged to receive a piece of food to be heated, a first microwave supply system configured to supply microwaves at the cavity bottom for energizing a browning function in the cavity, a second microwave supply system configured to supply microwaves into the cavity for exciting cavity modes and a control unit configured to control the first and second microwave supply systems based on a food category and/or a cooking program. The first supply system has at least one microwave source and at least one antenna arranged in a lower part of the cavity and the second microwave supply system has at least one microwave source and at least one feeding port arranged in an upper part of the cavity. The present invention is advantageous in that a microwave heating apparatus with an improved crisp function is provided.

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.

Abstract: Apparatus for controlling the thermal uniformity of a substrate. In some embodiments, the thermal uniformity of the substrate is controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate is controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate includes a substrate support having a support surface to support a substrate thereon. A plurality of flow paths having a substantially equivalent fluid conductance are disposed within the substrate support to flow a heat transfer fluid beneath the support surface.

Abstract: An electrostatic chuck includes a base having a first through hole extending through the base. An electrostatic chuck attraction plate is bonded to the base. An attraction electrode is incorporated in the electrostatic chuck attraction plate to generates electrostatic charge and electrostatically attract an attraction subject. A recess is formed in the electrostatic chuck attraction plate in alignment with the first through hole. The recess partially exposes the attraction electrode. An adhesive layer is formed between the electrostatic chuck attraction plate and the base. The adhesive layer covers an inner surface of the recess. A tubular insulator is arranged in the recess. The tubular insulator includes a second through hole. A power supply terminal is arranged in the first through hole and the second through hole. The power supply terminal includes a distal portion electrically connected to the attraction electrode.

Abstract: The invention relates to a method for removing carbon layers, in particular ta-C layers, from substrate surfaces of tools and components. The substrate to be de-coated is accordingly arranged on a substrate support in a vacuum chamber, the vacuum chamber is charged with at least one reactive gas assisting the evacuation of carbon in gaseous form and a low-voltage plasma discharge is created in the vacuum chamber to activate the reactive gas and hence assist the required chemical reaction or reactions to de-coat the coated substrate. The low-voltage plasma discharge is a dc low-volt arc discharge, the substrate surfaces to be de-coated are bombarded substantially exclusively with electrons and oxygen, nitrogen and hydrogen are used as reactive gas.