Abstract: A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

Abstract: Disclosed is a structure aimed to reduce the frequency of replacement of an insulating spacer arranged between grids of an ion beam irradiation device. More specifically, disclosed is a so-called insulating spacer arranged in order to maintain insulation between the grids, the insulating spacer having an annular groove in a portion composed of an annular, substantially plane portion opposed to a grid and a cylindrical portion being raised from the central portion of the annular, substantially plane portion and abutting the grid, with the annular groove being perpendicular to the plane and separating the peripheral portion of the annular portion from the cylindrical portion.

Abstract: A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of ?0>p>a2>b2 and p=(?g1/2)+±? (where ? is 5% or below of ?g1), where ?0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, ?r1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and ?g1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Abstract: Making it possible to execute the detection of the particles floating inside a processing chamber with the use of an optical system including one observing window and one unit (An object of the present invention is, by using an optical system including one observing window and one unit, to make it possible to execute the detection of the particles floating inside a processing chamber.) Also, in order to be able to detect exceedingly feeble particle scattered-lights with a high-accuracy, when performing a desired thin-film forming or thin-film processing treatment toward a to-be-processed target inside the processing chamber, the following method is employed: First, the irradiation with a beam is executed into the processing chamber through the observing window.

Abstract: Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly; and an ion beam directing and multi-deflecting assembly, for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

Abstract: A heater including a plate-shaped substrate having a heating surface for heating an object and a heater element provided in the substrate or on its surface. A central axis C2 of a circumscribed circle of the heater element and a central axis C1 of the substrate are not on the same axis and a gap exists between the axes. When manufacturing the heater, a central axis C1 of a resistant heater is specified, thermal uniformity of the heating surface of a preliminary substrate is evaluated, and a central axis C2 of the substrate is specified. The central axis C2 is specified at a position where the thermal uniformity of the heating surface is superior to a case where the central axis C2 of the substrate is located on the central axis C1. Then a substrate having the central axis C2 is formed by subjecting the preliminary substrate to grinding processing.

Abstract: In a plasma processing system, a method for detecting an arc event on a substrate in a plasma chamber having a chuck is disclosed. The method includes positioning a substrate on the chuck. The method also includes providing a vibration-sensing arrangement in the plasma chamber, the vibration-sensing arrangement being configured for measuring arc-induced vibrations on the substrate, the arc-induced vibrations being generated when an arc strikes the substrate during plasma processing of the substrate in the plasma processing chamber.

Abstract: A detection unit (8) is disposed for detecting the magnitudes of f1 and f2 frequency components of a composite signal which is passed through a center electrode cable (4). A detecting signal generating unit (9) generates a detecting signal corresponding to a gap between a nozzle (5) and a workpiece (6) from the magnitudes of the f1 and f2 frequency components of the composite signal, which are detected by the detection unit (8). As a result, even if plasma occurs in the gap between the nozzle (5) and the workpiece (6), the gap can be detected with a high degree of precision.

Abstract: A plasma generator comprising a propagation chamber propagating an electromagnetic radiation, and a plasma-generating chamber associated with the propagation chamber; said propagation chamber has a passage region of increasing width on moving away from the entrance region for insertion of the electromagnetic radiation into the propagation chamber. The passage region enables an at least partial passage of the electromagnetic radiation towards the plasma-generating chamber.

Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace.

Abstract: Disclosed herein is a high-frequency induction plasma reactor apparatus for producing nano-powder, which is configured to continuously manufacture nano-powder in large quantities using solid-phase powder as a starting raw material and to manufacture high-purity nano-powder by completely vaporizing the material powder. The high-frequency induction plasma reactor apparatus comprises an upper body and a cover. The upper body is provided with a reaction pipe receiving a reactor extending vertically inside thereof, a high-frequency coil surrounding the outer periphery of the reaction pipe and a ceramic inner wall provided inside the reaction pipe. The ceramic inner wall is formed with a plurality of gas passing bores and defines a gas movement passage with the inner side wall of the reaction pipe therebetween for allowing the inflow of argon gas from the outside into the reactor. The cover is mounted to the upper end of the reactor and adapted to seal the reactor.

Abstract: A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member.

Abstract: A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the dielectric substrate. A shield including a slit is positioned on the gap layer. A relief structure is formed in at least one of the gap layer and the dielectric substrate. The dimensions of the gap layer, the slit in the shield, and the relief structure are chosen so as to prevent a formation of a continuous film across the relief structure. A chamber containing a gas is positioned adjacent to the shield so that the gas is ionized to form a microplasma when an electric field is induced in the chamber by the incident time varying electric field.

Abstract: A temperature unit to control a temperature of a device under test using a fluid includes a block disposed opposite the device under test and which defines a gap therebetween and through which the fluid passes across the device under test at a gap flow rate, and an actuator which moves the block. By adjusting the gap, the gap flow rate of the fluid flowing over the device under test changes so as to adjust the temperature of the device under test. Additionally, the block can be a heater block which generates heat receivable by the device under test across the gap such that the adjustment of the heater block by the actuator changes a thermal resistance across the gap.

Abstract: A plasma treatment installation comprising at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.

Abstract: A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of the substrate, setting the substrate support to a first support temperature corresponding to the first processing temperature of the substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of the substrate, and setting the substrate support to a second support temperature corresponding to the second processing temperature of the substrate.

Abstract: A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract: A microfabricated plasma generator and a method of generating a plasma, the plasma generator comprising: a substrate chip; a chamber defined by the substrate chip, the chamber including an inlet port through which analyte is in use delivered, an outlet port and a plasma-generation region in which a plasma is in use generated; and first and second electrodes across which a voltage is in use applied to generate a plasma in the plasma-generation region.

Abstract: Portable microwave plasma systems including supply lines for providing microwaves and gas flow are disclosed. The supply line includes at least one gas line or conduit and a microwave coaxial cable. A portable microwave plasma system includes a microwave source, a waveguide-to-coax adapter and a waveguide that interconnects the microwave source with the waveguide-to-coax adapter, a portable discharge unit and the supply line. The portable discharge unit includes a gas flow tube coupled to the supply line to receive gas flow and a rod-shaped conductor that is axially disposed in the gas flow tube and has an end configured to receive microwaves from the microwave coaxial cable and a tapered tip positioned adjacent the outlet portion of the gas flow tube. The tapered tip is configured to focus microwave traveling through the rod-shaped conductor and generate plasma from the gas flow.

Abstract: A reaction vessel and a method for efficiently producing and collecting nanoparticles in the reaction vessel using cyclonic gas flow. Gas is injected through an inlet tangentially positioned relative to the axis of the vessel to cause the gas to form an outer helical vortex flow and an inner helical vortex flow within the vessel. A reaction synthesizer is operated within the inner helical vortex to produce nanoparticles and larger byproduct particles from precursor materials. The double helical vortex conveys the byproduct particles to an outlet for collection responsive to the cyclonic flow and gravity and an outlet downstream of the inner helical vortex collects the nanoparticles. The vortices formed in the reaction vessel minimize buildup on walls of the reaction vessel and provide a way to rapidly move the synthesized nanoparticles out of the reaction vessel.

Abstract: Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a processing cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another.

Abstract: A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity concentration within a range corresponding to a minimal change in RF power absorption in the protective layer at an RF source power frequency with changes in coating temperature and or thickness. The metal base may have a set of first arcuately slotted gas passages and a set of pressure-dropping orifices coinciding axially with the top ends of the gas passages. The protective coating a set of arcuately slotted gas passages in registration gas passages of the metal base. The pressure drop in the orifices and the electric field drop in the slotted gas passages are both sufficient to maintain the pressure and electric field within the gas passages within a range that prevents arcing.

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract: A plasma processing system including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

Abstract: An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

Abstract: A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

Abstract: Apparatus and methods for plasma-assisted melting are provided. In one embodiment, a plasma-assisted melting method can include: (1) adding a solid to a melting region, (2) forming a plasma in a cavity by subjecting a gas to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, wherein the cavity has a wall, (3) sustaining the plasma in the cavity such that energy from the plasma passes through the wall into the melting region and melts the solid into a liquid, and (4) collecting the liquid. Solids that can be melted consistent with this invention can include metals, such as metal ore and scrap metal. Various plasma catalysts are also provided.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract: A remote plasma source employs a helical coil slow wave structure to couple microwave energy to a flowing gas to produce plasma for downstream substrate processing, such as photoresist stripping, ashing, or etching. The system also includes cooling structures for removing excess heat from the plasma source components.

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract: A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Abstract: A plasma reactor operable over a very wide process window of pressure, source power and bias power includes a resonant circuit consisting of an overhead electrode having a first impedance, a wafer support pedestal having a second impedance and a bulk plasma having a third impedance and generally lying in a process zone between the overhead electrode and the wafer support pedestal, the magnitudes of the impedances of the overhead electrode and the wafer support pedestal being within an order of magnitude of one another, the resonant circuit having a resonant frequency determined by the first, second and third impedances.

Abstract: A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract: A system and method for synthesizing nanopowder which provides for precursor material ablation from two opposing electrodes that are spaced apart within a gaseous atmosphere, where a plasma is created by a high power pulsed electrical discharge between the electrodes, such pulse being of short duration to inertially confine the plasma, thereby creating a high temperature and high density plasma having high quench and/or reaction rates with the gaseous atmosphere for improved nanopowder synthesis.

Abstract: A plasma emitter apparatus and method for using the same that includes a primary electrode and a secondary electrode. The secondary electrode is porous, that is, it is configured to permit the passage of plasma discharge therethrough. Accordingly, the plasma is received at one side of the secondary electrode and emitted from its opposing plasma exiting side. The secondary electrode may be a laminate of multiple insulating material layers with at least one conductive layer sandwiched therebetween. A plurality of apertures are defined through the laminate and a dielectric sleeve is inserted into and retained in the aperture. The generated plasma passes through one or more holes defined in each of the dielectric sleeves. Alternatively, the secondary electrode may be formed as a plurality of unidirectional high voltage wires strung substantially parallel across a frame or a plurality of bidirectional high voltage wires interwoven and secured by a perimeter frame.

Abstract: A heating device includes a first electrode and a second electrode including a planar portion providing a support surface for supporting an object to be heated in an external gaseous atmosphere to which the object to be heated and the support surface are exposed. The second electrode is formed as an enclosure enclosing and spaced from at least a portion of first electrode to define an interior space therebetween isolated from the external gaseous atmosphere. An exhaust port provides communication with the interior space for reducing the pressure within the interior space. A power supplies current between the first and second electrodes to produce an electric discharge within the internal space, thereby heating the second electrode and the object supported thereon.

Abstract: A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The energy components at frequencies that are harmonics of the fundamental frequency are monitored and controlled by placing a harmonic multiplexer containing a matching network and RF filter elements in energy receiving communication with the plasma.

Abstract: There is provided by this invention an apparatus and method of supplying to ignite a plasma wherein in the event of an arc a shunt switch is used to divert the power away from the plasma that is incorporated into an over-voltage protection circuit that controls the shunt switch to act as a boost switch when the arc is extinguished such that the stored inductor energy is used to boost the ignition voltage for reigniting the plasma if it is extinguished. When the arc is extinguished, the inductor current is diminished, and the plasma is ignited, then the switch S1 is turned OFF and the inductor energy goes to the plasma and the power supply operates in its normal operating mode.

Abstract: A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

Abstract: A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. “Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container”.

Abstract: A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

Abstract: Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency.