Abstract: Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or more of the steps, when the instability in the one or more steps exceeds a threshold. The adjustment acts to find an approximate minimum level of instability. A second recipe is constructed after the adjustment, such that at least one of the steps includes a respective operating frequency different from the nominal frequency. The second recipe is used to etch the one or more layers disposed over the substrate in the semiconductor processing chamber.

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: The invention addresses the problem of providing an edged tool such as a surgical clade or a razor blade that is durable and sharp, and a manufacturing method therefor. The problem is solved by an edged tool manufacturing method provided with a process of treating a metal base material, which has a machined surface obtained by machining, using a plasma generated in an atmosphere filled with a mixed gas having a main gas and a reaction gas as the main components.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Apparatuss of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: A plasma treatment installation including at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract: Atmospheric inductively coupled plasma torch comprising a vessel within which the plasma is generated and a coil wound around the periphery of the vessel. The coil has at least two spaced-apart winding layers. The coil is constructed such that all winding layers of a given multi-turn is wound before an adjacent multi-turn is wound. A first end of the coil is coupled to ground, and a second end of the coil is coupled to receive a RF driver signal that is configured to ignite the plasma to facilitate processing.

Abstract: An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

Abstract: An apparatus and method to extend and concentrate a plasma from one or more plasma sources through at least one RF grounded pathway. A first embodiment of the invention involves a method to extend and concentrate a plasma. A second embodiment of the invention involves an apparatus to extend and concentrate a plasma. In some embodiments, an electrostatic rod inserted inside a RF grounded pathway assists the extension and concentration of a plasma that can treat one or more articles.

Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract: Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature.

Abstract: The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.

Abstract: A radio-frequency heating apparatus includes a radio-frequency power generation unit (120), variable phase shift units (142a to 142d) that change a phase of a radio-frequency power generated by the radio-frequency power generation unit (120), radio-frequency power units (140a to 140d), and a control unit (110) that sets a frequency for the radio-frequency power generation unit (120) and a phase shift amount for the variable phase shift units (142a to 142d). Backward power detection units in the radio-frequency power units (140a to 140d) individually detect a reflected power and a through power at the frequency set for the radio-frequency power generation unit (120) by the control unit (110), and the control unit (110) determines a frequency for the radio-frequency power generation unit (120) and a phase shift amount for the variable phase shift units (142a to 142d) for heating the object, on the basis of the detected amplitude and phase of the reflected wave and the through wave.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: System and method for providing isolated power to a component that is also subject a set of RF signals that includes at least a first RF signal having a first RF frequency is provided. There is included providing a DC voltage signal and modulating the DC voltage signal into an isolated power signal using an isolation transformer. The isolated power signal has an intermediate frequency that is higher than 60 Hz and lower than the first RF frequency. There is included supplying the DC voltage signal to the primary winding and obtaining the isolated power signal from the secondary winding; and delivering the isolated power to the component using the isolated power signal.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Abstract: A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.

Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.

Abstract: An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor.

Abstract: A method and apparatus for oxidizing a combustible material. The method includes introducing a volume of the combustible material into a plasma zone of a gliding electric arc oxidation system. The method also includes introducing a volume of oxidizer into the plasma zone of the gliding electric arc oxidation system. The volume of oxidizer includes a stoichiometrically excessive amount of oxygen. The method also includes generating an electrical discharge between electrodes within the plasma zone of the gliding electric arc oxidation system to oxidize the combustible material.

Abstract: An exemplary embodiment providing one or more improvements includes a device and method for producing a lunar agglutinate simulant in which batch material is supported and moved through a plasma arc at a rate which partially reacts the batch material.

Abstract: A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.

Abstract: Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements.

Abstract: Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

Abstract: A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.

Abstract: Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature.

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract: In one aspect, a method of improving the performance of an electronic device manufacturing facility is provided, including the step of reducing the number of electronic device manufacturing component seasoning steps which are performed using production equipment, whereby the amount of electronic device manufacturing system downtime is reduced. Several other aspects are provided.

Abstract: A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.

Abstract: Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature.

Abstract: A first inert gas (5) is supplied into a reaction space (1) and a high-frequency power supply (4) applies a high-frequency electric field so that a primary plasma (6) composed of the first inert gas which has been made into the plasma is ejected from the reaction space. A mixed gas area (10) in which a mixed gas (8) having a second inert gas (12) as a main ingredient and a proper amount of a reactive gas (13) mixed is formed. The primary plasma collides into the mixed gas area to generate a secondary plasma (11) composed of the mixed gas which has been made into the plasma, and the secondary plasma is sprayed on a processed object (S) to carry out a plasma processing. Accordingly, the plasma processing is carried out in a wide range by an atmospheric pressure plasma generated by a small input power.

Abstract: A mechanism for adjusting an orientation of an electrode in a plasma processing chamber is disclosed. The plasma processing chamber may be utilized to process at least a substrate, which may be inserted into the plasma processing chamber in an insertion direction. The mechanism may include a support plate disposed outside a chamber wall of the plasma processing chamber and pivoted relative to the chamber wall. The support plate may have a first thread. The mechanism may also include an adjustment screw having a second thread that engages the first thread. Turning the adjustment screw may cause translation of a portion of the support plate relative to the adjustment screw. The translation of the portion of the support plate may cause rotation of the support plate relative to the chamber wall, thereby rotating the electrode with respect to an axis that is orthogonal to the insertion direction.

Abstract: Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Abstract: An upper electrode for use in a plasma processing chamber is provided, which includes a center segment and a plurality of outer segments. The outer segments are attached to the center segment to adjust the area of the overall electrode. Gas distribution holes may be selectively formed on the center and outer segments, or both. By adding or removing the outer segments and stacking layers, the dimension of the electrode, the area of gas spurting region and the thickness of the provided upper electrode may be adjusted.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: A segmented transformer coupled plasma (TCP) coil is provided as a source for generating a uniform plasma in a plasma reactor. The segmented TCP is divided into two or more segment coils which, when connected to an RF source, produces a circulating flow of electrons to cause a magnetic field in the plasma. Because the segmented TCP employs multiple segment coils, a plasma is generated that is more spatially uniform than the plasma produced by a monolithic coil. This is implemented using a power distributing component that allows the RF current to be distributed in the segment coils such that a uniform plasma density can be obtained in an area spanned by the coils. For instance, variable shunts, switchable shunts, and disconnect switches can be used to vary the RF currents in the individual coils.