Abstract: A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.

Abstract: An exposure device engraves an image on the surface of a recording medium by scanning and exposing the recording medium with a light beam emitted from an exposure head. The exposure head comprises a light source for emitting a light beam, an exposure lens for causing the light beam to form an image on or close to the surface of the recording medium, a direction changer disposed upstream or downstream of the exposure lens in the direction in which the light beam travels, and/or inside of the exposure lens on the optical path of a light beam having a numerical aperture higher than a given numerical aperture to change the direction of the light beam having a numerical aperture higher than a given numerical aperture in such a manner as not to affect the process of engraving an image on a surface of the recording medium.

Abstract: Multiple beamlet laser beam delivery systems and methods may be used in laser machining systems and methods to machine multiple regions on a workpiece simultaneously. One embodiment of a laser machining system and method may be used, for example, to scribe one or more lines in large flat workpieces such as solar panels. In particular, laser machining systems and methods may be used to scribe lines in thin film photovoltaic (PV) solar panels with accuracy, high speed and reduced cost. The multiple beam delivery systems may be movable to scribe multiple lines simultaneously in the workpiece.

Abstract: A laser system produces a first laser beam for rapidly removing the bulk of material in an area to form a ragged hole. The laser system produces a second laser beam for accurately cleaning up the ragged hole so that the final hole has dimensions of high precision.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A system for deleting the edges from coated substrates (6) and for separating said substrates into individual modules along the edge-deleted strips, wherein a laser scanner (2) for edge deletion and a laser head (9) for separating the substrate are disposed on opposite surfaces of the substrate (6) and, depending on the machine direction, can be positioned relative to each other, and their movement can be jointly controlled in such a manner that the laser scanner (2), in the machine direction, is always disposed at a fixed distance in front of the laser head (9), with two directions that are perpendicular to each other, preferably each with alternating directions of movement being available as machine directions.

Abstract: A laser processing apparatus including a laser applying unit. The laser applying unit includes a first laser oscillating unit, a second laser oscillating unit, a first laser branching unit for branching a laser beam oscillated from the first laser oscillating unit into three optical paths, a second laser branching unit for branching a laser beam oscillated from the second laser oscillating unit into three optical paths, three first focusing units for respectively focusing the laser beams through the three optical paths obtained by the first laser branching unit toward a glass substrate, and three second focusing units for respectively focusing the laser beams through the three optical paths obtained by the second laser branching unit. The first focusing units and the second focusing units are alternately arranged in a line in an indexing direction.

Abstract: Systems and methods for material singulation. According to some embodiments, methods for material singulation may include applying a first laser output to the material, the first laser output causing a modification of a material property of the material when exposed to the first laser output; and applying a second laser output to the material that was exposed to the first laser output to cause singulation of the material in such a way that surfaces created by the singulation of the material are substantially free from defects.

Abstract: It is desirable for the production of workpieces, which are sometimes produced by a rapid prototyping method, to be further automatable. To this end a device is provided having a laser for generating a laser beam in order to set a material, and a workpiece support which can be exposed directly to the laser. There is also provided an optical instrument for redirecting and deviating the laser beam so that the workpiece support can also be exposed indirectly to the laser. Material can therefore also be cured more easily in undercuts of workpiece blanks.

Abstract: A method for laser beam machining of a workpiece in which a laser beam is focused by an objective, into or onto the workpiece having a boundary surface, to produce a machining effect by a two-photon process, and the position of the focal point with respect to the workpiece is shifted. To obtain a reference for the position of the focal point, an image of a luminating modulation object is projected through the objective onto the workpiece into the focal plane or so as to intersect it. Reflections of the image occurring at the boundary surface are imaged into an autofocus image plane, and are detected by a camera. The camera image plane either intersects the autofocus image plane when the image of the illuminating modulation object lies in the focal plane, or lies in the autofocus image plane when the image of the modulation object intersects the focal plane.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.

Abstract: A laser processing apparatus including a detecting unit. The detecting unit includes a white light source for emitting white light, a focusing lens for focusing the white light to the workpiece, a first optical fiber for guiding the white light emitted from the white light source to the focusing lens, a detector for detecting the intensity of reflected light from the workpiece, and a second optical fiber for guiding the reflected light to the detector. Accordingly, the white light to be focused to the workpiece can be easily handled and only a wavelength component focused on the workpiece can be stably propagated.

Abstract: The embodiments disclosed herein provide systems and methods for correcting a head-to-head offset in a laser machining system with two or more processing heads. A focusing lens is associated with each processing head, and is configured to receive an incident laser beam along an incident beam axis of propagation. The incident beam axis of propagation is offset from the primary axis of the focusing lens. The focusing lens is further configured to rotate about the incident beam axis of propagation in order to steer the incident laser beam's path with respect to a workpiece.

Abstract: A method of sealing a surface crack in a member is provided includes steps of irradiating a region of the member at which the crack is produced with a heating laser beam so as to heat the region to a temperature lower than a melting point of the member, and then irradiating a region of the member at which the crack is produced with a welding laser beam subsequent to irradiation of the heating laser beam so as to heat the region to a temperature higher than or equal to the melting point of the member, thereby sealing an opening of the surface crack of the member.

Abstract: Laser pulses are selected from a group of closely spaced laser pulses with an optical modulator by adjusting pulse timing relative to an impingement interval. An adjusted pulse is moved from an impingement interval to a non-impingement interval and is blocked. The blocked laser source is stabilized by running nearly continuously. Pulse selection with multiple laser sources is achieved with a single acousto-optic modulator.

Abstract: A method of laser welding of two members by their respective edges, on a first surface of a slideway section, wherein at least a first one of said members is welded by application of two parallel laser beams from a second surface of the slideway section, with a distance between the beams approximately corresponding to the thickness of the first member, to obtain a laser transmission welding in a single run.

Abstract: An object is to provide a method and an apparatus for improving a residual stress in a tubular body, which are enabled to improve the residual stress reliably by clearly defining controlling rage for treatment conditions without depending on an installation state and configuration of the tubular body. When an outer-circumferential surface of a welded portion of a cylindrical tubular body (2) is irradiated with a laser beam that circles around an outer circumference of the tubular body (2), a heating width W in a circumferential direction heated by the laser-beam irradiation and a laser-beam moving speed V in the circumferential direction are set so that a stress in the circumferential direction in an inner surface of the tubular body (2) produced by the heating with the laser beam is at least larger than a yielding stress of a material that the tubular body (2) is made of.

Abstract: A method for heating a wafer that has at least one layer to be heated and a sub-layer. The method includes applying at least one light flux pulse to the wafer for heating the at least one layer in a manner such that the absorption coefficient of the flux by the layer is low as long as the temperature of the layer to be heated is in the low temperature range (PBT) but the absorption coefficient increases significantly when the temperature of the layer enters a high temperature range (PHT). Also, a sub-layer is selected such that the absorption coefficient of the applied light flux at the selected wavelength is high in the low temperature range (PBT) and the temperature enters the high temperature range (PHT) when the sub-layer is subjected to the light flux. The application of the light flux achieves improved heating of the wafer.

Abstract: To further automate the manufacture of hearing aid component parts that are in part produced with a rapid prototyping method, a laser beam for curing material is generated by a laser, and a workpiece support that can be directly exposed by the laser is provided. The laser beam is deflected by an optic device so that the workpiece support can be indirectly exposed with the laser. Material can thereby be more easily applied in undercuts of workpiece blanks that form the basis of the hearing aid component parts.

Abstract: A system and method for laser beam welding at least two adjacent superalloy components involves substantially simultaneous formation of a base weld with a first filler metal placed between the components and cap weld with second filler metal formed over the base weld. A shim is inserted between the components, which may optionally be formed with a groove along the joint surface. A filler wire is fed to a location over the given surface or within the optional groove. Two lasers or a laser and coupled beam splitter supply first and second laser beams that are applied at focal points separated by a predetermined distance (e.g., 0.05-1.5 cm). The first laser beam is used to form a base weld with the first filler metal between the components, and the second laser beam is used to form a cap weld with the second filler metal on top of the base weld.

Abstract: A device for processing a workpiece using a plurality of parallel laser beams includes a focusing optical system displaceable in a direction of an axis of symmetry configured to focus each of the plurality of parallel laser beams onto a common focusing plane, and wherein the plurality of laser beams include a first and a second laser beam pair, each containing two laser beams equidistant from the axis of symmetry. The device further includes a reflector assembly having at least two reflectors each having a plurality of reflection surfaces displaceable relative to one another in a direction of the axis of symmetry.

Abstract: A laser processing system provides a burst of ultrafast laser pulses having a selectively shaped burst envelope. A burst pulse laser includes a high repetition rate ultrafast laser to deliver a pulse train with each pulse in the train having an independently controlled amplitude. The respective amplitudes of each ultrafast pulse in a group define a “burst envelope.” In addition to independently controlling the amplitude of each ultrafast pulse within the burst envelope, the system may also provide selective control of spacing between each ultrafast pulse and/or the overall temporal width of the burst envelope. Thus, the system provides selective shaping of the burst envelope for particular laser processing applications.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Abstract: The invention relates to a device and a method for producing tailored blanks. The device comprises a workpiece carrier for the sheets (15a, 15b) that are to be joined into tailored blanks in the butt joint by welding. The invention further comprises a plurality of laser welding heads (14a, 14b), which are arranged one behind the other over the workpiece carrier and along the butt joint to be welded and can be moved with an advancing device (11a, 11b), wherein the heads can be aligned with the joint using positioning means, wherein at least two combined laser cutting and welding heads (14a, 14b) are carried by at least two independent arms (13a, 13b), each associated with independent units (11a, 11b) of the advancing device, and wherein the positioning means can adjust the distances of the units (11a, 11b) in the direction of the butt joint and also the distances of the cutting and welding heads (14a, 14b) in the transversal direction to the butt joint.

Abstract: A method for welding includes providing a pair of substrates with no gap between them. The welding process uses lasers that are movable through a locus of points relative to the substrates and each other to weld the substrate together. The movable lasers assist in controlling a formation of a weld keyhole that assists in expelling gases that develop during the welding process.

Abstract: A welding method and apparatus for welding workpieces together by conducting a laser beam welding process on a joint region that includes a weld seam defined by and between faying surfaces of the workpieces, and then conducting a hybrid laser arc welding process on the joint region. The laser beam welding process entails causing a first laser beam to travel along the joint region, penetrate the weld seam and form a weldment. The hybrid laser arc welding process remelts the weldment by simultaneously causing an electric arc and a second laser beam to overlap and travel along the joint region and form a weld pool in the weldment. On cooling, a weld joint is formed within the joint region and its weld seam.

Abstract: Disclosed are systems and methods for directing laser energy to surfaces of materials via elements which have sharp points, and for reducing the adverse effects of particles which become dislodged by scribing and laser machining of materials.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A welding method is provided for forming a weld joint between first and second elements of a workpiece. The method includes heating the first and second elements to form an interface of material in a plasticized or melted state interface between the elements. The interface material is then allowed to cool to a plasticized state if previously in a melted state. The interface material, while in the plasticized state, is then mixed, for example, using a grinding/extruding process, to remove any dendritic-type weld microstructures introduced into the interface material during the heating process.

Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract: A method for irradiating a plate (104) using multiple co-located radiation sources (108-1,108-2,108-3,108-4) includes that each of the multiple co-located radiation sources (108-1,108-2,108-3,108-4) is responsible for irradiating one of a plurality of bounded sub-regions (110-1,110-2,110-3,110-4) in the plate (104). As a result, sub-regions of the plate (104) that are to be irradiated receive relatively even, relatively well-defined radiation from the multiple co-located radiation sources (108-1,108-2,108-3,108-4). An apparatus performs the method, and a solar cell is produced using the method. The method and the apparatus can be applied in laser doping and laser cutting.

Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: A laser-welding apparatus may include a laser source, an incoming laser beam produced by the laser source, and a beam splitter that splits the incoming laser beam to form a leading beam and a trailing beam. A first focusing lens may focus the leading beam and a second focusing lens may focus the trailing beam to form a trailing-beam pattern on a workpiece. The trailing-beam pattern may include a crescent-shape having arms and a tail portion.

Abstract: Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.

Abstract: Disclosed is a dry cleaning apparatus and method for removing contaminants on a surface of a workpiece. The disclosed dry cleaning apparatus comprises a laser cleaning unit having a laser beam generator for generating a laser induced shock wave in the atmosphere, the laser cleaning unit being suitable for removing an inorganic contaminant on the surface of the workpiece using the generated laser induced shock wave; and a flash cleaning unit having a flash generator for generating a flash having pulse wave, the flash cleaning unit being suitable for removing an organic contaminant on the surface of the workpiece using the generated flash.

Abstract: A bonding device includes a bonding head including a bonding tool for sucking and holding an electronic component, and a laser heater for heating the electronic component by irradiating laser light on the electronic component held by the bonding tool from an inside of the bonding head, the laser heater including a collective unit for condensing laser light emitted from a light source. A focusing point of the laser light condensed by the collective unit is formed inside the bonding head.

Abstract: A laser working apparatus includes: a laser head provided with a reflector which changes the direction of any one of a laser beam and a visible light; a robot which moves the laser head; and a robot control apparatus. When laser working is performed, the robot control apparatus controls the laser head so that the laser beam can draw a predetermined working pattern on the basis of a predetermined working position on a work piece. When an operation checking work is performed, the robot control apparatus controls the laser head so that the visible light beam can be emitted only to a reference position of the working pattern.

Abstract: There is described a method for producing a hole using e.g. a lasers, wherein short laser pulse durations are used. The laser pulse durations are varied, short laser pulse durations being utilized only in the area to be removed in which an influence on the penetration behavior and discharge behavior is noticeable while longer pulse durations of >0.4 ms are used. This is the case for the inner surface of a diffuser of a hole, for example, which can be produced very accurately by means of short laser pulse durations.

Abstract: In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.

Abstract: A welding apparatus is provided for forming a weld joint between first and second elements of a workpiece. The apparatus heats the first and second elements to form an interface of material in a plasticized or melted state interface between the elements. The interface material is then allowed to cool to a plasticized state if previously in a melted state. The interface material, while in the plasticized state, is then mixed, for example, using a grinding/extruding mixer, to remove any dendritic-type weld microstructures introduced into the interface material during heating.

Abstract: A processing area of a structural component, such as a gas turbine component, is heated by irradiation with several laser sources prior to and/or during and/or after carrying out a processing such as a deposit welding or machining of the component on the processing area. For the heating, each laser source directs a respective energy beam onto the processing area, which respectively produces an energy spot on the processing area. The respective positions of the energy spots are static or quasi-static on the processing area. The energy spots jointly heat the processing area.

Abstract: Glass substrate cutting apparatuses using lasers are disclosed, where a laser cutting head is moved. A glass substrate cutting apparatus includes two parts for a laser cutting head: heavy laser beam generators fixed to respective ends of a gantry structure moving in parallel along two gantry stages located on either side of a cutting table, and relatively lightweight laser irradiation heads moving horizontally in parallel with the gantry structure. The glass substrate cutting apparatus includes a cutting table for maintaining a glass substrate in a horizontal state; biaxial gantry stages for moving a gantry structure along the cutting table; the gantry structure moving in between an upper part of the biaxial gantry stages; laser beam generators fixed to respective ends of the gantry structure for oscillating the laser; and laser irradiation heads that move horizontally on respective ends of the gantry structure and irradiate the laser upon the glass substrate.

Abstract: The present invention relates to a method and apparatus having a structure that enables laser processing of an object even when the object has a surface formed with irregularities. The laser processing method irradiates objects, each having a cylindrical form extending in a first direction, with laser light. Here, the objects are arranged on a first plane along a second direction orthogonal to the first direction. The arranged objects are irradiated with first and second laser light beams in irradiation directions different from each other to the first plane. At least during when the first and second irradiation light beams are respectively emitted, irradiation positions of the first and second laser light beams to the first plane are relatively moved.

Abstract: A laser processing method involving moving first and second laser beams relative to a workpiece, wherein the first and second laser beams have at least a differing wavelength or intensity. The method including irradiating the first and second laser beams through first and second portions, respectively, of an optical element that directs the first and second laser beams onto the workpiece, wherein irradiating the second laser beam is subsequent to the irradiating the first laser beam. The method including moving the first laser beam and the second laser beam relative to the workpiece along another direction. The method including irradiating the first and second laser beams through third and fourth portions, respectively, of the optical element, wherein the third and fourth portions are dependent on the another direction, wherein irradiating the second laser beam is subsequent to the irradiating the first laser beam.

Abstract: A laser processing apparatus is provided with a first laser oscillator for laser CVD and a second laser oscillator for laser repair in a laser oscillation section. Either one of the first or second laser beam is irradiated by switching the first and second laser oscillators by a laser oscillator switch portion of a main body section. An optical path forming member is disposed such that the first or second laser beam, whichever is irradiated, will take the same optical path and reach a sample, after passing a common slit, to perform laser processing on the sample. Further, an objective lens is configured to be switched to an objective lens having a magnification corresponding to a wavelength of the laser beam irradiated from the laser oscillation section by an objective lens switch section of an objective lens section.

Abstract: Laser assisted machining process and machine utilizing multiple distributed laser units that are strategically distributed around the workpiece being machined to simultaneously heat the workpiece, creating a desired temperature distribution for laser assisted machining. Sequential incremental heating from different directions and positions are used, resulting in longer tool life and shorter machining time.

Abstract: A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an f? lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.