Abstract: A coating removal apparatus removes a coating from a surface. The apparatus has a movable scanning head and scanning optics. The scanning head is movable in one dimension, and the scanning optics adjust in two dimensions to compensate for movement of the scanning head to implement long range scanning with a uniform scanning pattern. Further, a surface roughness is determined by measuring specular and scattered reflections at various angles. For composite surfaces, the apparatus utilizes UV laser radiation and a controlled atmosphere to remove coating and alter the chemical characteristics at the surface.

Abstract: A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

Abstract: A device for pretreating an exterior surface of an aircraft coated with an aircraft-specific base material so as to prepare the surface for a final painting with aircraft paint includes a pretreating tool. The pretreating tool has a laser head configured to activate the aircraft-specific base material using a laser. The device also includes a support construction including a robot device and a control unit configured to control and move the laser head over the surface using the robot device.

Abstract: To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-? lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with the incidence angle of a laser beam, is used. The slit is disposed between the f-? lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface by a projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.

Abstract: The present invention relates to a laser processing method and the like provided with a structure for enabling realization of both preferable processing of locations not easily reached by laser light and effective inhibition of damage caused to locations easily reached by laser light during laser processing. Radiation optics scan locations irradiated with laser light from a laser light source while radiating laser light onto a plurality of objects arranged on a stage and the periphery thereof from a direction perpendicular to the stage. On the stage reflecting members are respectively arranged adjacent to the plurality of objects. The reflecting members reflect laser light radiated from the radiation optics towards lateral surfaces of the objects. Since laser light reflected by the reflecting members is radiated onto the lateral surfaces of the objects, laser light also reaches the lateral surfaces of the objects not easily reached by laser light without having to increase the intensity of the laser light.

Abstract: A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.

Abstract: Apparatus and methods of thermally processing semiconductor substrates are disclosed. Aspects of the apparatus include a source of intense radiation and a rotating energy distributor that distributes the intense radiation to a rectifier. The rectifier directs the radiation toward the substrate. Aspects of the method include using a rotating energy distributor to distribute pulsed energy to a substrate for processing. The rotational rate of the energy distributor is set based on the pulse repetition rate of the energy source. A substrate may be continuously translated with respect to the energy distributor at a rate set based on the pulse repetition rate of the energy source.

Abstract: A welding method for an impeller having a plurality of blades, a disc and an exterior body including a shroud welded to the plurality of blades, comprising the steps of: a first step for forming a groove having a prescribed depth and a prescribed width toward one of the blades on a surface of the disc or the exterior body, which is opposite to a surface against the blade abuts, emitting laser light toward the bottom of the groove, and performing melt-through bead welding to bond the bottom of the groove to an end of the blade in such a way that a bead formed on the back of the disc or the shroud is curved with an inward depression; and a second step for performing overlaying welding after completion of the first step by supplying a filler metal to a molten zone while the bottom of the groove is scanned with the laser light.

Abstract: A method for laser beam machining of a workpiece in which a laser beam is focused by an objective, into or onto the workpiece having a boundary surface, to produce a machining effect by a two-photon process, and the position of the focal point with respect to the workpiece is shifted. To obtain a reference for the position of the focal point, an image of a luminating modulation object is projected through the objective onto the workpiece into the focal plane or so as to intersect it. Reflections of the image occurring at the boundary surface are imaged into an autofocus image plane, and are detected by a camera. The camera image plane either intersects the autofocus image plane when the image of the illuminating modulation object lies in the focal plane, or lies in the autofocus image plane when the image of the modulation object intersects the focal plane.

Abstract: The embodiments disclosed herein provide systems and methods for correcting a head-to-head offset in a laser machining system with two or more processing heads. A focusing lens is associated with each processing head, and is configured to receive an incident laser beam along an incident beam axis of propagation. The incident beam axis of propagation is offset from the primary axis of the focusing lens. The focusing lens is further configured to rotate about the incident beam axis of propagation in order to steer the incident laser beam's path with respect to a workpiece.

Abstract: Laser pulses are selected from a group of closely spaced laser pulses with an optical modulator by adjusting pulse timing relative to an impingement interval. An adjusted pulse is moved from an impingement interval to a non-impingement interval and is blocked. The blocked laser source is stabilized by running nearly continuously. Pulse selection with multiple laser sources is achieved with a single acousto-optic modulator.

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Abstract: The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.

Abstract: There is provided a laser machining method and a laser machining apparatus whose machining accuracy and quality excel without lowering machining efficiency. One hole is machined by a split beam that is a first pulsed laser beam and another split beam that is a second pulsed laser beam whose irradiation position is determined based on irradiation position of the first laser beam. In this case, the machining quality may be improved by machining the circular hole by equalizing circling directions and angular velocity of the split beams. A beam splitter splits a laser beam outputted out of one laser oscillator into the split beams and AOMs can time-share them.

Abstract: Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image sensor has a sensor array region and a periphery circuit. The methods determines a size of the laser beam from a length of the sensor array region and a length of the periphery circuit so that the laser beam covers an integer number of the sensor array region for at least one alignment of the laser beam on the array of BSI image sensors. The methods further determines a scan pattern so that the boundary of the laser beam does not overlap the sensor array regions during the laser annealing, but only overlaps the periphery circuits.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: A housing for an electronic device is described. The housing includes a metal substrate, and a plurality of recesses formed on an outer surface of the metal substrate. The recesses define a pattern. The recesses are dispersed on the outer surface with a gradual change of density of the recesses across at least one dimension of the outer surface. The recesses have an average width of about 0.02 mm-0.04 mm. The average depth of the recesses is about 0.05 mm-0.1 mm, and the distance between each two adjacent recesses is about 0.2 mm-2 mm.

Abstract: An apparatus for forming a pattern using a laser is provided. The apparatus includes a pattern storing unit, a controller, a laser oscillating unit, an X-Y driver, a header unit, and a stage. The pattern storing unit stores data on light guide patterns of a discontinuous straight line shape. The controller transmits position signal of the light guide patterns to the X-Y driver and simultaneously, transmits a switching signal to the laser oscillating unit. The laser oscillating unit outputs a laser beam synchronized with a movement of the header unit. The X-Y driver moves the header unit and the stage. The header unit moves along a first guide rail. The stage moves along a fixed second guide rail in the front and rear direction of the light guide panel.

Abstract: An annealing method irradiates a target object, having a film formed on its surface, with a laser beam to perform an annealing process to the target object. The surface of the target object is irradiated with the laser beam obliquely at an incident angle that is determined to achieve an improved laser absorptance of the film.

Abstract: Disclosed are laser scribing systems for laser scribing semiconductor substrates with backside coatings. In particular these laser scribing systems laser scribe opto-electric semiconductor wafers with reflective backside coatings so as to avoid damage to the opto-electric device while maintaining efficient manufacturing. In more particular these laser scribing systems employ ultrafast pulsed lasers at wavelength in the visible region and below in multiple passes to remove the backside coatings and scribe the wafer.

Abstract: An apparatus for forming a pattern is provided. The apparatus includes a pattern storing unit, a controller, a laser oscillating unit, an X-Y driver, a header unit, and a stage. The pattern storing unit stores data on a light guide pattern. The controller reads out the data on the light guide pattern, and transmits a position signal of each light guide pattern to the X-Y driver and simultaneously, transmits a switching signal to the laser oscillating unit. The laser oscillating unit outputs a laser beam synchronized with a movement of a header unit. The X-Y driver moves the header unit and the stage. The header unit moves along a fixed first guide rail in the left and right direction of the light guide panel. The stage moves along a fixed second guide rail in the front and rear direction of the light guide panel.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

Abstract: In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.

Abstract: To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.

Abstract: A laser working apparatus includes: a laser head provided with a reflector which changes the direction of any one of a laser beam and a visible light; a robot which moves the laser head; and a robot control apparatus. When laser working is performed, the robot control apparatus controls the laser head so that the laser beam can draw a predetermined working pattern on the basis of a predetermined working position on a work piece. When an operation checking work is performed, the robot control apparatus controls the laser head so that the visible light beam can be emitted only to a reference position of the working pattern.

Abstract: A laser processing head mounted on a robot arm moves from with a constant speed in a direction from a welding point to a next welding point, while a reflection mirror continuously turns in order to maintain laser beams focused on the welding point until the welding at the welding point is completed, and the reflection mirror quickly turns to shift the focus of the laser beams onto the next welding point when the welding at the welding point is completed.

Abstract: Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate. Embodiments of an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond, picosecond, and/or nanosecond pulses.

Abstract: Device for remote laser welding of metal sheet structures comprises an anthropomorphous robot onto whose wrist is mounted an accessory device carrying a focusing head for the laser beam coming from a laser source, as well as means for oscillating the pointing direction of the focused laser beam around one oscillation axis. During welding the robot shifts the accessory device along a given trajectory and at a given speed, while the pointing direction of the focused beam is oscillated to as to allow the area of structure that is lighted by the laser beam to shift at a speed and/or along a trajectory not depending directly on the shifting trajectory and speed of the accessory device carried by the robot.

Abstract: The present invention is to provide a method for smoothing the optical surface having a concave defect of an optical component for EUVL. The present invention relates to a method for smoothing the optical surface of an optical component for EUVL, comprising irradiating, with an excimer laser having a wavelength of 250 nm or less with a fluence of 0.5 to 2.0 J/cm2, the optical surface having a concave defect of an optical component for EUV lithography (EUVL), the optical component being made of a TiO2-containing silica glass material comprising SiO2 as a main component.

Abstract: A laser beam machining system including a chuck table for holding a work, and a laser beam irradiation unit for irradiating the work held on the chuck table with a laser beam, wherein the laser beam irradiation unit includes: a pulsed laser beam oscillator for oscillating a pulsed laser beam; a condenser for condensing the pulsed laser beam oscillated from the pulsed laser beam oscillator; a laser beam scanning unit disposed between the pulsed laser beam oscillator and the condenser and operative to deflect the pulsed laser beam to be inputted to the condenser; and a laser beam reshaping unit which ids disposed between the pulsed laser beam oscillator and the laser beam scanning unit and by which the energy distribution of the pulsed laser beam oscillated from the pulsed laser beam oscillator is reshaped into a top hat shape.

Abstract: A laser processing method involving moving first and second laser beams relative to a workpiece, wherein the first and second laser beams have at least a differing wavelength or intensity. The method including irradiating the first and second laser beams through first and second portions, respectively, of an optical element that directs the first and second laser beams onto the workpiece, wherein irradiating the second laser beam is subsequent to the irradiating the first laser beam. The method including moving the first laser beam and the second laser beam relative to the workpiece along another direction. The method including irradiating the first and second laser beams through third and fourth portions, respectively, of the optical element, wherein the third and fourth portions are dependent on the another direction, wherein irradiating the second laser beam is subsequent to the irradiating the first laser beam.

Abstract: A method is disclosed for on-the-fly processing at least one structure of a group of structures with a pulsed laser output. The method includes the steps of relatively positioning the group of structures and the pulsed laser output axis with non-constant velocity, and applying the pulsed laser output to the at least one structure of the group of structures during the step of relatively positioning the group of structures and the pulsed laser output axis with non-constant velocity.

Abstract: A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an f? lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed.

Abstract: A method for accurately laser scribing lines on a panel utilising a laser beam scanner unit (13) including an optical system and a scanner lens. The unit (13) moves a laser beam (12) in a first direction (X), to scribe sections of lines (15) on the panel (11) that are a fraction of the total line length required and then moving the unit (13) continuously with respect to the panel (11) in a second direction (Y), perpendicular to the first direction (X), to form a band (16) of scribe lines. The scanner unit (13) is positioned so that the starting position of scribe lines in each band next to be processed overlap exactly the finishing position ends of scribe lines in the last band that has been processed so that all scribe lines interconnect. The method repeats the using and moving steps to form a plurality of parallel bands of scribe lines which cover the area of the panel.

Abstract: By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.

Abstract: Welding using a laser, which leaves keyhole portions at each pass, that allow gases to vent. That keyhole portion is an area within the interior portion, e.g., an inside of a spiral or a circular arc. The keyhole is not processed by the laser and gases can escape. The laser later circles back to process the area.

Abstract: An apparatus for forming a pattern is provided. The apparatus includes a pattern storing unit, a controller, a laser oscillating unit, an X-Y driver, a header unit, and a stage. The pattern storing unit stores data on a light guide pattern. The controller reads out the data on the light guide pattern, and transmits a position signal of each light guide pattern to the X-Y driver and simultaneously, transmits a switching signal to the laser oscillating unit. The laser oscillating unit outputs a laser beam synchronized with a movement of a header unit. The X-Y driver moves the header unit and the stage. The header unit moves along a fixed first guide rail in the left and right direction of the light guide panel. The stage moves along a fixed second guide rail in the front and rear direction of the light guide panel.

Abstract: An optical element includes: a pit forming portion of a material that forms a pit in the vicinity of each focal point of a predetermined light beam upon condensation, wherein the pits are formed in such a manner that the volume percentage of the pits with respect to the material at distances from a light incident face becomes smaller away from the incident face.

Abstract: Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to reduce substrate warpage. When the substrates are semiconductor wafers having microelectronic devices; the orientation angles may be selected to produce controlled strain and to improve electronic performance of the devices.

Abstract: A method is described for forming a partially transparent thin film solar panel by providing an array of unconnected holes in an opaque layer of the panel the holes being sufficiently small so that they are not discernable to the human eye and the light transparency factor caused by the holes being selectively controlled so that it can be graded in two dimensions by varying the size and/or spacing of the holes.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 ?m to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.

Abstract: UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 ?m to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.

Abstract: UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 ?m to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.