Abstract: A layered heater structure including an electrode layer and a localized tuning method for tuning the electrode layer of a layered heater structure with high precision is provided. The localized tuning method tunes the electrode layer to its proper local resistance to minimize temperature offsets on the heater surface and thus provide a desired thermal profile that is in marked contrast to conventional, non-localized resistance tuning approaches based on thickness trimming practices, such as grinding or blasting, or resistivity adjustment, such as local heat treatment.

Abstract: A heating device is provided, including a ceramic base in which a resistance heating body is embedded, gas flow passages formed in an inside portion of the base, and adjustment members which vary flow rates of a gas provided in the gas flow passages.

Abstract: A mounting table structure capable of preventing cracks in a mounting table made of a ceramic material or at a joint portion between the mounting table and a column for supporting the mounting table. The mounting table structure includes a ceramic mounting table made of a ceramic material for mounting thereon a target object in order to perform a specific heat treatment on the target object in a processing chamber, and a supporting unit for supporting the mounting table. A quartz glass coating layer is formed on a surface of the mounting table while maintaining a compressive stress in a plane direction. As a result, cracks are prevented from occurring in a mounting table made of a ceramic material or at a joint portion between the mounting table and a column for supporting the mounting table.

Abstract: A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.

Abstract: A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Abstract: A baking unit, for use in photolithography equipment, has a sensing device for sensing whether components of the baking unit are level and whether particles are present on inner surfaces of the baking. The sensing device has a sensor unit and an optical element. The sensor unit is preferably mounted to the hot plate of the baking unit and includes a light emitter and a light detector. The optical element is preferably mounted to a cover of the baking unit at a position at which the optical element reflects/refracts light emitted from the light emitter to the light detector when the hot plate and the cover are level, and as long as particles are not present on the optical element.

Abstract: A power-supplying member comprises: a first rod-shaped member connected to power-supplied object; a second rod-shaped member connected to power supply; and a thermal-expansion absorbing member, which is disposed between the first rod-shaped member and the second rod-shaped member, and which shrinks in a longitudinal direction in response to changes in shape of the first rod-shaped member and the second rod-shaped member in the longitudinal direction due to thermal expansion.

Abstract: In a thermal processing unit, a substrate is held by a local transport hand to be transported between a transfer section and a heating unit, and subjected to a heat processing by the heating unit. Also, the local transport hand is cooled by a cooling plate in the transfer section.

Abstract: A hot-air type heater apparatus includes an air intake for receiving air from an area to be heated by the hot-air type heater apparatus. In particular, the air intake includes a suction fan for drawing air from a surrounding area into the hot-air type heater apparatus. The air from the surrounding area enters the hot-air type heater through the air intake. The hot-air type heater also includes an air passage to direct the air received from the air intake to a ceramic heater. The air passage allows the air received from the air intake to flow into the ceramic heater. The ceramic heater is then able to rapidly increase the air temperature. Furthermore, the hot-air type heater includes a warm air outlet coupled to the ceramic heater. The warm air outlet outputs the air heated by the ceramic heater into the area to be heated by the hot-air type heater apparatus.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: The substrate stage according to the present invention stage includes a stage upon which a wafer is placed, a heater element installed within the stage, an upright support that ranges upright from a bottom of a processing chamber and is constituted with a tubular member that includes a small tube portion, a large tube portion and a middle portion present between the small tube portion and the large tube portion, an outer heat shield plate disposed so as to surround the outer side of the small tube portion and an inner heat shield plate disposed so as to close off an inner side of the large tube portion. The outer heat shield plate and the inner heat shield plate are disposed so that an inner edge of the outer heat shield plate and an outer edge of the inner heat shield plate overlap along the entire circumference.

Abstract: The temperature of a wafer is measured using thermal sensors that are embedded in elastomeric diaphragms positioned in holes formed in a support layer of a bake plate. A pressure differential caused by heating the bake plate causes the elastomeric diaphragms to contact the wafer. The thermal sensors determine the temperature of the wafer at the locations where the elastomeric diaphragms contact the wafer.

Abstract: A substrate holding structure includes a wafer stage having a first main surface and a second main surface opposite to the first main surface. A substrate placing area is defined on the first main surface. The substrate holding structure further includes a static capacity measurement electrode having a center circular electrode and at least one circular ring electrode for measuring a combined capacity among a substrate to be placed in the substrate placing area, the center circular electrode, and the circular ring electrode; at least one temperature measurement unit; an electrode control unit connected to the center circular electrode and the circular ring electrode; a temperature control unit connected to the temperature measurement unit and the temperature adjustment unit; a storage unit; a calculation unit connected to the storage unit; and a control unit connected to the electrode control unit and the temperature control unit.

Abstract: A wafer holder that prevents positional deviation of the wafer mounted on the wafer-mounting surface of a chuck top and enables better thermal uniformity of the wafer, as well as a heater unit including the wafer holder and a wafer prober mounting these are provided. The wafer holder has a chuck top mounting and fixing the wafer and a supporter supporting the chuck top, and the chuck top has water absorption of at least 0.01% and preferably at least 0.1%. Preferable material of the chuck top is a composite of metal and ceramics, and particularly, a composite of aluminum and silicon carbide, or a composite of silicon and silicon carbide.

Abstract: It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith. A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.

Abstract: Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.

Abstract: In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole.

Abstract: A bake station includes a bake plate having a thickness defined by a distance between an upper surface and a lower surface of the bake plate. The bake plate is configured to heat a substrate positioned adjacent the upper surface of the bake plate. The bake station also includes a base plate having a first surface positioned below and opposing the lower surface of the bake plate and a side plate extending between the lower surface of the bake plate and the first surface of the base plate. The side plate, the lower surface of the bake plate, and the first surface of the base plate define a space. The bake station further includes a plurality of nozzles coupled to the base plate. Each of the plurality of nozzles has an inlet configured to receive an input flow of fluid and an exit port configured to expel an exit flow of fluid onto the lower surface of the bake plate.

Abstract: A substrate heat treatment apparatus for heat-treating a substrate includes a bake plate for supporting the substrate, and a cover disposed above the bake plate and temperature-controlled for securing a heat-treating atmosphere of the bake plate. An adjusting device adjusts a space between the cover and the bake plate. A control device adjusts the space, through the adjusting device, successively to a transport space for allowing transport of the substrate, a transitional space smaller than the transport space and close to the bake plate, and a steady space smaller than the transport space and larger than the transitional space.

Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

Abstract: Provided are a wafer with the characteristics of abrupt metal-insulator transition (MIT), and a heat treatment apparatus and method that make it possible to mass-produce a large-diameter wafer without directly attaching the wafer to a heater or a substrate holder. The heat treatment apparatus includes a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film, and a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater.

Abstract: A heater strip for use as a heating element in an electric heater is made up of a profiled strip made of a flat metallic material forming a resistor section and of mounting elements extending over one common longitudinal side and they are manufactured as one piece with the resistor section for mounting the heater strip to a support. The strip has a zigzag-shaped structure. The mounting elements are provided only on the flat leg sections of the zigzag-shaped heater strip.

Abstract: A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

Abstract: A substrate heat treatment apparatus for heat-treating a substrate includes a bake plate having projections on an upper surface thereof, a seal unit disposed peripherally of the upper surface of the bake plate for closing a lateral area of a minute space formed between a lower surface of the substrate and the upper surface of the bake plate when the substrate is placed on the bake plate, and exhaust bores for exhausting gas from the minute space. The substrate placed on the bake plate is heat-treated in a state of the gas exhausted from the minute space through the exhaust bores.

Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: The present invention relates to an electric radiating pipe capable of enhancing a heating efficiency in such a manner that a mixture of a porous operation medium and a volatile operation fluid is filled in a radiation pipe, and a porous operation medium is fast heated based on a viscosity difference, and a densely filled operation fluid is phase-changed to a high temperature vapor or a high temperature liquid based on a heated operation medium. In a radiating pipe that includes a certain shaped pipe body, and a heat wire passing through to the interior of the pipe body wherein both ends of the pipe body are sealed by a plugging cap, there is provided an electric radiating pipe that includes a porous non-flammable operation medium and volatile operation fluid being mixed and being filled into the interior of the pipe body.

Abstract: A susceptor [1] is manufactured by providing a protruding part [8] on the joining surface of a retainer plate [4], and additionally providing a groove part [9] composed of a dovetail groove on the joining surface of a heat transfer plate [3] in a position facing the protruding part [8]. By fitting the protruding part [8] into the groove part [9] and caulking, the heat transfer plate [3] and the retainer plate [4] are conjoined.

Abstract: A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

Abstract: A substrate processing apparatus includes: a support member supporting a substrate in a process chamber; a first temperature adjusting member in thermal contact with the support member; and a second temperature adjusting member capable of thermally coming into contact with and separating from the support member, wherein the first temperature adjusting member and the second temperature adjusting member are temperature-adjusted to different temperatures respectively.

Abstract: The post exposure bake cycle in a chemically amplified resist process is more precisely controlled by measuring the distance from multiple locations on the bottom of each processed wafer to a reference plane surface while the wafer is supported on a cool plate. Subsequent to measuring the distance, the wafers are transferred to the hot plate that has a series of controllable heating elements. The set temperature for the heating elements is established in response to the distances measured while the wafer is on the cooling plate. The measurements are taken by utilizing proximity sensors located within the cooling plate.

Abstract: A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions.

Abstract: An article comprising a graphite part coated with a pyrolytic graphite (pG) for increased mechanical strength of at least 25% over an uncoated graphite part. In connector applications for use in a semiconductor processing assembly such as a heater, the pG coated component is overcoated with at least a protective layer of an electrically insulating material, and wherein part of the pG coated graphite part is exposed (uncoated with the protective layer) for providing electrical connections to the assembly.

Abstract: A heater that is capable of heating an object to a desired temperature in a short period while minimizing the temperature difference the surface of the object is provided. The heater comprising a plate having a first surface and a second surface, the first surface being a mount surface whereon an object is placed and having a resistive heating member; wherein the resistive heating member is formed in a continuous band having arc bands located on one of two concentric circles of different radii, at least one arc band located on the other circle, and linkage arc band that connects the arc band located on the one circle and the arc band located on the other circle; while the distance between the adjacent linkage arc bands is smaller than the distance between the arc band located on the one circle and the arc band located on the other circle.

Abstract: An electrostatic chuck comprises a dielectric ceramic layer made of an alumina sintered body having a volume resistivity equal to or greater than about 1×1017?·cm at room temperature and a volume resistivity equal to or greater than about 1×1014?·cm at 300° C., and an electrode formed on one surface of the dielectric ceramic layer.

Abstract: A process module tuning method characterizes a process module by gathering data using a process condition measuring device to measure process outputs while inputs are excited. The data is used to identify a dynamic process model. The dynamic process model is then be used to determine process input settings that will produce desired outputs. For multi-zone process modules, the interactions between zones may be modeled.

Abstract: A susceptor for deposition process equipment is provided. The susceptor includes a heater that heats the susceptor. The heater includes a sheath. The sheath surrounds a heating wire and is filled with an insulating ceramic material. An isolation layer is formed opposing ends of the sheath to isolate the ceramic material from the ambient environment. The isolation layer is formed from a lead/glass mixture that blocks moisture in the ambient environment from being absorbed by the insulating material. Input/output terminals are connected to the heating wire. The input/output terminals pass through the isolation layer and are exposed to the ambient environment. Current is supplied to the heating wire through the input/output terminals to heat the heating wire.

Abstract: A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).

Abstract: Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.

Abstract: A thermal processing module for a track lithography tool includes a bake plate comprising a process surface and a lower surface opposing the process surface. The thermal processing module also includes a plurality of electrodes coupled to the bake plate Each of the plurality of electrodes is adapted to receive a drive signal. The thermal processing module further includes a plurality of proximity pins coupled to the process surface and extending to a predetermined height from the process surface, a plurality of flexible members coupled to the lower surface of the bake plate, a chill plate coupled to the plurality of flexible members and defining a plurality of chambers, and a plurality of channels. Each of the plurality of channels is in fluid communication with one of the plurality of chambers and with one or more sources of a pressurized fluid.

Abstract: A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points.

Abstract: The present platen enables a component such as a surface-mount device to be held in close proximity to a contact heating source via vacuum suction. The platen comprises top and bottom thermally conductive surfaces with the top surface held in close proximity to the contact heating source, a through-hole which extends between the surfaces, and at least one groove recessed into the top surface which runs from a portion of the top surface that extends beyond the contact heating source to the through-hole, such that an applied vacuum is conveyed to the bottom surface via the grooves and through-hole. The bottom surface may include a rim around its perimeter; vacuum suction conveyed via the grooves and through-hole can hold a component to be heated against the rim, or within the recessed portion. The platen can be tailored for use with various component types, including PBGA and QFP SMDs.

Abstract: Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.

Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Abstract: An electrothermal heater assembly, configured to be embedded inside a component for anti-icing and/or deicing the component, includes a titanium foil configured for use as a heating element, at least one reinforcement layer adjacent the titanium foil, and an adhesive configured to bond the titanium foil to the at least one reinforcement layer. The heater assembly is configured such that the titanium foil carries a structural load within the heater assembly.

Abstract: A heating device is provided, including an insulating ceramic base having a heating surface for heating an object. A high frequency electrode is embedded in the insulating ceramic base in the vicinity of the heating surface, and a heating body is embedded in the base in a location that is further from the heating surface than the location of the high frequency electrode. A low resistance ceramic member is provided so as to be exposed to a part of the heating surface of the insulating ceramic base and to be connected to a conductive member inside of the insulating ceramic base. A main component of the material of the low resistance ceramic member is common to that of the insulating ceramic base, and the respective thermal expansion coefficients are equivalent.

Abstract: When a heating plate performs heat treatment on a substrate by a wireless wafer provided with a temperature detecting portion, a storing portion and a controller, the temperature of the heating plate is measured readily and accurately while suppressing lowering of a heating operation efficiency due to a measuring operation. A temperature measurement start instruction is provided to the controller of the wireless wafer at a position in a wireless wafer carrier, and thereby the wireless wafer starts temperature detection to store time-series data of the detected temperature value in the storing portion. The wireless wafer is transferred to a heating unit through a predetermined transfer path. Based on a transportation time required for placing the wireless wafer on the heating plate and the time-series data of the detected temperature value in the storing portion, the time-series data of the detected temperature value obtained after the wireless wafer is placed on the heating plate is fetched.

Abstract: A wafer processing apparatus, including a heater apparatus, is provided. The heater apparatus includes a coating layer; and a seal structure in contact with the coating layer. The seal structure is formed from a seal formable material. The seal formable material includes at least one of a YASB glassy composition, a CGYP glassy composition, or a combination of the YASB glassy composition and the CGYP glassy composition. A method and device are also included.

Abstract: A heating device has a ceramic base with a heating surface, and a heating body embedded in the ceramic base. The heating device includes a thermal conductive member between the heating surface and the heating body in the ceramic base. The thermal conductive member has thermal conductivity higher than the ceramic base. The present, heating device achieves superior temperature uniformity of a heated object, particularly in the semiconductor device manufacturing process.

Abstract: A ceramics heater comprises a circular heater plate formed of aluminum nitride and a metal foil heater wire formed of a high-melting metal and having a thickness of 100 ?m to 175 ?m. The heater wire is embedded in the heater plate. The heater wire has an inside portion located near the center of the heater plate and formed in zigzags at first pitches in the circumferential direction of the heater plate and an outside portion located near the outer periphery of the heater plate and formed in zigzags at second pitches in the circumferential direction of the heater plate. The second pitches are shorter than the first pitches.