Abstract: A wafer bake apparatus includes an air flow control unit of pneumatic cylinder structure operating interlockingly with a wafer lift unit and induces the air flow between a wafer and a hot plate. Therefore, when a wafer is placed in a baking position the air between the wafer and the hot plate descends. As a result, the wafer is no longer under the influence of air resistance, and can be more accurately placed in the baking position. In addition, when the baked wafer is lifted to an unloading position, the air between the hot plate and the wafer ascends, which in turn supports the wafer and prevents the distortion of the wafer.

Abstract: A susceptor including a substrate support and a conductor is provided. The substrate support includes a conductive element, a contact bonded to the conductive element, and a bushing. The conductor is disposed through the bushing and is bonded to the contact. The substrate support can also include a conductive spreader between the contact and the conductive element. A method for fabricating a susceptor is also provided. The method comprises forming a plate including a bushing preform, sintering or hot-pressing a conductive element and a contact between a ceramic layer and the plate to produce a substrate support, forming a conductor opening into the substrate support and through the bushing preform to the contact, and bonding a conductor into the conductor opening.

Abstract: A semiconductor wafer heat treatment apparatus and method, which can carry out a heat treatment to suppress variations in line widths within a surface on a semiconductor wafer and the like, includes: a heating plate for heating a semiconductor wafer to a predetermined temperature; a temperature measuring unit for measuring temperatures when heating the semiconductor wafer or a semiconductor wafer equivalent placed on the heating plate, at portions divided into a plurality of regions; and a controller for controlling the temperatures of the semiconductor wafer, and based on the temperature measurement result of the temperature measuring unit, the controller controls the temperature in heating the semiconductor wafer, for each of the plurality of regions. In cooling after the heating process, based on the temperature measurement result, the controller controls the temperature in cooling the semiconductor wafer, for each of the plurality of regions.

Abstract: A ceramic board is provided which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force. A ceramic board is provided for semiconductor manufacture apparatuses comprising a ceramic substrate and a semiconductor wafer mounted thereon directly or supported indirectly at a fixed distance from its surface, wherein the surface of said ceramic substrate, where said semiconductor wafer is to be mounted or supported, is controlled to a flatness of 1 to 50 ?m over a measurement range of [(diametric end-to-end length)?10 mm].

Abstract: Provided is a semiconductor manufacturing system capable of loading a plurality of semiconductor wafers into a vertical reaction tube, and performing a thermal process. The semiconductor manufacturing system includes a first wafer loading boat, a second wafer loading boat, a plate cap, a door plate and a lifting system. The first wafer loading boat is mounted in the reaction tube and includes a plurality of holder supporters that support a wafer holder in a shape of a board, the wafer holder being loaded vertically at a predetermined interval and on which the semiconductor wafer is rested on. The second wafer loading boat is inside or outside the first wafer loading boat and has a wafer supporter that supports the semiconductor wafer. The lifting system moves either the first wafer loading boat or the second wafer loading boat vertically and separates the semiconductor wafer, which is loaded on the wafer holder, from the wafer holder at a predetermined height.

Abstract: A semiconductor fabricating apparatus having a structure, which facilitates a loading and unloading operation of wafers while having a low effect by a high temperature during a heat treatment. The semiconductor fabricating apparatus includes a plurality of ring-shaped holder having brims and recessed portions, the brims for mounting the to-be-processed wafers thereon, thereby performing the required heat treatment. A tweezer plate of a wafer loading-transferring device is inserted onto the recessed portion or taken out therefrom, and the inserted tweezer plate is ascended or descended, so that the wafer can be inserted on the brims or taken out therefrom.

Abstract: A ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in ?-rays radiated to prevent electrical errors, and to decrease an electrostatic chucking force such as heater or wafer prober, generation of particles, and circuit defects. The ceramic substrate is configured such that the level of ?-rays radiated from the surface of the ceramic substrate is not higher than 0.250 c/cm2.hr.

Abstract: A workpiece is supported on a gas cushion to reduce mechanical stresses on the workpiece during processing. A plenum having a workpiece support flange for receiving the workpiece is connected to a gas supply. When gas flows into the plenum and pressure increases sufficiently to lift the workpiece, the workpiece is lifted and the gas flows out of the plenum between the flange and the workpiece edge. The workpiece is thus supported above the flange by the gas during processing.

Abstract: A heat treatment apparatus (100) having: a susceptor (2) rotatably provided in a heat treatment vessel (1), on which a wafer (W) is placed; a preheat ring (3) surrounding a periphery of the susceptor (2) to be close to and in non-contact with the susceptor, which is supported by a base (4) provided in the heat treatment vessel (1); and a heating apparatus (8) for heating a wafer (W) placed on the susceptor (2), wherein the preheat ring (3) is formed such that an inner peripheral center (31a) is eccentric to an outer periphery (32). The preheat ring (3) is moved around the susceptor (2); the preheat ring (3) is positioned to minimize a distance between the inner peripheral center (31a) of the preheat ring (3) and the center (2b) of the susceptor (2); and thereafter a heat treatment is performed to a wafer (W).

Abstract: A substrate heater is provided including a plate-shaped ceramic base having a first side defining a convex heating surface on at least a portion of which a substrate is placed, a resistance-heating element embedded in the ceramic base, and a tubular member joined to a central portion on an opposed second side of the ceramic base. The convex heating surface has a central portion and a peripheral portion, wherein the height of the heating surface decreases from the central portion toward the peripheral portion thereof.

Abstract: A ceramic heater includes a ceramic substrate having a heating face, a resista nce heating element embedded in the substrate and a terminal electrically connected with the resistance heating element. The resistance heating element includes first and second coiled windings. The first winding has a coil diameter that is larger than the coil diameter of the second winding. A non-wound wire may also be used instead of the second winding.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.

Abstract: A heater unit has a heater plate including a resistive heat generator, and a hollow shaft portion of a short type with a length of 20 to 50 mm, which is provide on the side of the lower face of the heater plate. The shaft portion is made from aluminum alloy. The bottom face of the shaft portion is fixed to a heater mounting portion of a casing. A sealing member is provided between the bottom face of the shaft portion and the casing. The thickness of the shaft portion is set to 0.5 to 5.0 mm, and the length, area of heat-transfer surface, and material of the shaft portion are selected such that the thermal resistance Rth of the shaft portion is 0.4 K/W or more.

Abstract: A heating system 1 has a ceramic substrate 2 having a mounting face 2a for mounting an object W, a back face 2b and a side face 2c; a heating means 3 for generating heat from the mounting face 2a of the ceramic substrate 2; and a plate-shaped supporting metal member 4 for supporting the back face 2b of the ceramic substrate 2. According to the system, the thermal deformation of the mounting face upon heating over time may be reduced and the flatness of the object may be maintained at a low value. It is further possible to impart a mechanical strength to the heater sufficient for its handling and to reduce the production cost.

Abstract: Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (?) direction and the same traversing any particular radial line. The grids are preferably arcuate and each have the same surface area. In one embodiment an outer zone is asymmetrically designed to induce predictable wafer curling in a saddle shape.

Abstract: A method and apparatus for adjusting exhaust flow, and the apparatus has a programmable exhaust control regulator generating a first input signal to a motor control circuit, an exhaust flow meter generating a second input signal to the motor control circuit and a motor driven control valve moved to different positions according to the first and second input signals, the control valve being installed in an exhaust portion of the hot plate apparatus.

Abstract: A support structure for supporting a ceramic susceptor in a chamber is provided. The support structure includes a supporting portion joined with a back face of the ceramic susceptor. The supporting portion includes an inner space that is separated from the atmosphere of the chamber. A cooling system is provided below the supporting portion 6. At least one thermal control portion is provided between the cooling system and the supporting portion for reducing thermal conduction from the susceptor to the cooling system.

Abstract: A semiconductor wafer susceptor for batch substrate processing. The susceptor includes a central region in a primary plane and a plurality of flat annular extensions extending below the central region in a secondary plane. The primary and secondary planes are parallel to each other. An edge of the substrate overhangs the central region allowing no contact of the susceptor with the substrate edge.

Abstract: A system, apparatus, and method for thermal processing of substrates undergoing lithographic chemical processes is provided. The thermal processing system includes at least one heating element, a heat distributing plate, having a heating surface and being disposed in thermal communication with the at least one heating element. The heat distributing plate is constructed and arranged to distribute heat from the heating element onto the heating surface. A substrate support, supports a substrate at a position above the heating surface and the system includes an actuator that rotates the substrate relative to the heating surface during a heat transfer operation.

Abstract: A heating unit having a heat pipe structure includes a heater and a cooling pipe disposed in an inner space of a holding table. The holding table and the cooling pipe are thermally insulated by a heat-insulating member, so that it is possible to prevent direct heat transfer from the cooling pipe to the holding table. Therefore, it is possible to rapidly perform a cooling processing while keeping the evenness of the temperature distribution of the mounting face and the temperature distribution of the substrate mounted on the mounting face, and consequently to appropriately keep the evenness of the film thickness and the line width of a wiring layer formed on the substrate upon heat processing.

Abstract: A supporting structure is provided, including a ceramic susceptor to be heated and having a mounting face and a back face. A ceramic supporting member is joined with the back face of the susceptor. The ceramic supporting member has an outer wall surface, a joining face joined with the susceptor and an end face opposing the joining face. A curved part is formed between the outer wall surface and back face, and has a radius of curvature R in a range of 4 mm to 25 mm in the longitudinal direction of the ceramic supporting member.

Abstract: A susceptor supporting construction has a susceptor for heating a member to be processed and a supporting member, in which an inner space is arranged, connected to the susceptor. A chamber having an opening is connected to the supporting member, the opening of the chamber is communicated with the inner space of the supporting member, and the inner space of the supporting member is sealed in an airtight manner with respect to an inner space of the chamber. The supporting member further has a tubular main portion, a diameter extending portion arranged at an end portion thereof to which the susceptor is faced, and one or more continuous round portions arranged between the main portion and the diameter extending portion, when viewed by an outer profile of a longitudinal section of the supporting member.

Abstract: Disclosed are an apparatus and a method for bonding electronic components, a circuit board, and an electronic component mounting apparatus, whereby various kinds of circuit boards can be manufactured, each by a small amount, with high productivity as compared with the conventional art. There are provided a stage member and a heating device, so that a circuit board is heated by the heating device while held in contact with the stage member, which stage member has a size almost equal to that of one circuit board. Generation of losses can be reduced for compact circuit boards, and heating can be performed individually, correspondingly, for each kind of circuit board. Manufacturing various kinds of circuit boards, each by a small amount, with high productivity as compared with the conventional art is enabled accordingly.

Abstract: A wafer bake system includes a heating plate for heating a wafer, and means for supporting the wafer to be spaced from the heating plate, wherein a gap distribution between the wafer and the heating plate is measured, and a temperature gradient of the wafer is controlled based on the measured gap distribution.

Abstract: A stable and durable heat-generating element and substrate, a method of efficient and highly precise manufacture of same, and equipment utilizing same are obtained. Employing as material a silicon substrate into at least a portion of which boron or another impurity is diffused to impart conductivity, a heater portion, in which are provided one or a plurality of slits the corner portions of which are removed or are rounded, is fabricated integrally on the silicon substrate by etching processes. Simultaneously with this, a depression portion provided below to control the heating state of the heater portion is formed integrally.

Abstract: A reflow process is provided for multiple units which improves productivity. A reflow furnace is moved along a transport direction of a tape substrate and is fixed at a position matching the product pitch of a circuit substrate. Any of a plurality of heating blocks and cooling blocks are matched to the product pitches of the circuit substrate. By doing so, it is possible to continuously carry out the reflow process for a tape substrate on which circuit substrates having different product pitches are arranged.

Abstract: A supporting structure of a ceramic susceptor is provided, including a ceramic susceptor to be heated having a mounting face and a back face, and a ceramic supporting member joined with the back face of the susceptor. The supporting member has an outer wall surface, and a continuous and integral curved part formed between the outer wall surface and the back face of the susceptor. The curved part has a radius of curvature “R” in a range of 4 mm to 25 mm in the longitudinal direction of the supporting member, and a minimum wall thickness “t” in a range of 1 mm to 15 mm.

Abstract: A workpiece chuck includes a thermal plate assembly which includes both heating and cooling capability. The heating element can be a resistive heater in a coiled configuration disposed in a plane. The cooling can be performed via a cooling fluid circulated through cooling tubes which are also disposed in a coiled configuration in a plane. The plane of the heating element and the cooling tubes can be the same plane, and that plane can be a center plane of the thermal plate assembly. By locating the heating and cooling in the same plane, uniform heating and cooling are achieved. Also, by locating the heating element and cooling tubes in the center of the thermal plate, distortions such as doming and dishing in the thermal plate are eliminated such that the wafer can be held extremely flat on the chuck. The heating element and cooling tubes are coiled in an interleaved fashion to provide uniform heating and cooling while allowing them to simultaneously occupy the same plane.

Abstract: A process for producing a ceramic heater includes forming a resistance heating element on a surface of a ceramic substrate. The resistance heating element is divided into plural sections. Resistivities of the plural sections are measured, respectively. Each of the plural sections is trimmed according to a comparison between the resistivities of the plural sections.

Abstract: Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10° C./min or more.

Abstract: A ceramic substrate for a semiconductor-producing/examining device, in which it is possible to promptly raise its temperature, a heating face thereof has a small temperature variation, and no semiconductor wafer and the like is damaged or distorted by thermal impact. The ceramic substrate for a semiconductor-producing/examining device has a resistance heating element formed on a surface thereof or inside thereof, wherein a projected portion for fitting a semiconductor wafer is formed along the periphery thereof and a large number of convex bodies, which make contact with the semiconductor wafer, are formed inside the projected portion.

Abstract: An object of the present invention is to provide a ceramic heater so that hot spots around the end portions of a heat resistor may be prevented. A ceramic heater has a ceramic substrate having a mounting face for an object to be heated, a heat resistor 3B embedded in the substrate and having end portions 3a, and a connecting member 6 electrically connected with the end portion 3a. At least one connecting member 6 substantially has an outer shape of a sphere, an ellipsoid of revolution, or a cylinder. The connecting member 6 has a fixing portion 3a of the heat resistor by means of caulking.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, evenly. The ceramic heater of the present invention is a ceramic heater having and a resistance heating element formed on the surface of the ceramic substrate or inside the ceramic substrate, wherein: said ceramic heater is equipped with: a temperature-measuring means measuring the temperature of said ceramic substrate and an object to be heated; a control unit supplying electric power to said heating element; a memory unit memorizing the temperature data measured by said temperature-measuring means; and an operation unit calculating electric power required for said heating element from said temperature, said ceramic heater being constituted such that said heating element is divided into at least 2 or more circuits and different electric power is supplied to each of the circuits of said resistance heating element.

Abstract: A heating apparatus having an electrostatic adsorption function comprising at least a supporting substrate, an electrode for electrostatic adsorption and a heating layer formed on the supporting substrate, and an insulating layer formed so as to cover the electrode for electrostatic adsorption and the heating layer, wherein a surface roughness of the insulating layer satisfies Ra?0.05 ?m and Rmax?0.6 ?m, and Vickers hardness of the surface of the insulating layer is 10 GPa or less. Thus, there can be provided a heating apparatus having an electrostatic adsorption function in which scratches are not generated on a silicon wafer or the like and the generation of particles can be suppressed when heating/cooling the wafer or the like.

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

Abstract: Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.

Abstract: A system and method for heating materials is provided. Generally, the system contains a first layer upon which a material may be placed for heating the material, wherein the first layer has sufficient conductivity to allow heat to travel through the first layer. The system also contains a heater layer provided on the first layer, which is capable of providing heat to the first layer for heating the material. In addition, the system has an insulator layer for protecting the heater layer from contaminants.

Abstract: A ceramic heater manufacturing method capable of preventing reflection of a laser beam at the time the performing trimming by irradiation using a laser beam and performing trimming of a resistance heating element or a conductor layer. The ceramic heater manufacturing method includes forming a resistance heating element having a pattern on a surface of a ceramic substrate; and irradiating a laser beam onto the resistance heating element to form a gutter or a cut after a preceding step to adjust a resistance value of the resistance element. When the resistance heating element is formed on the surface of the ceramic substrate, the resistance heating element is adjusted to have a surface roughness Ra of 0.01 ?m or more in accordance with MS B 0601.

Abstract: An apparatus for fabricating a semiconductor device, whereby a semiconductor wafer is thermally treated with a wafer treatment device. The semiconductor wafer is delivered with a conveyer to the wafer treatment device. The temperature of the conveyer is controlled to have an optimum temperature by an arm heater and an arm cooler.

Abstract: There is disclosed a heating apparatus with electrostatic attraction function 1, comprising at least a supporting base 2, an electrode for electrostatic attraction 4 and a heating layer 5 that are formed on the supporting base, and an insulating layer 6 that is formed on the electrode for electrostatic attraction and the heating layer, wherein the electrode for electrostatic attraction and/or the heating layer are/is composed of pyrolytic graphite containing boron and/or boron carbide of 0.001-30% by weight in terms of boron concentration, and the insulating layer has an electric resistivity of 106-1015 ?cm. There is provided a heating apparatus with electrostatic attraction function, which has a high thermal shock resistance, no problem of delamination, a proper resistance value, and a sufficient electrostatic attraction force even in a medium and high temperature range of 500-800° C.

Abstract: To provide a wafer heating apparatus that can measure a surface temperature of a wafer accurately and responsively. A front surface of a ceramic plate 2 serves as a mounting surface on which a wafer is placed, and a rear surface or an inner portion of the ceramic plate 2 is formed with a resistance heating element 5. A recess 9 is formed in the rear surface of the ceramic plate 2. A temperature measuring member formed of a temperature sensor 8a and leads 8 is inserted in the recess 9 so as to be held by filling 17. In the wafer heating apparatus, a length along the leads from the front of the protective tube to a point where the leads are exposed from the filling is set to 5 to 30 times an outer diameter of the protective tube.

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

Abstract: A ceramic beater for a semiconductor producing/examining device having a resistance heating element superior in adhesion to a substrate. The ceramic heater includes a ceramic substrate and a resistance heating element formed on the surface of the ceramic substrate. Further, irregularities are formed on the side face of the resistance heating element.

Abstract: A workpiece stage of a resist curing device is devised in which a workpiece on which a resist has been applied is held on a workpiece stage by vacuum suction, in which the workpiece is irradiated with UV radiation with a simultaneous temperature increase, in which it is cooled after UV radiation and by which the resist is cured, the workpiece stage having heating and cooling arrangements, major warping of the carrier is avoided and reliable holding of the workpiece on the carrier surface by vacuum suction obtained by the carrier being made of an aluminum alloy or a copper alloy which meets the following condition: ?/?y3.1 ? labeling the thermal stress which is determined using the following formula: where E is Young's modulus (N/mm2) at 200° C., ? is the coefficient of linear expansion (1/° C.) at 200° C. and ?T is a temperature difference (° C.) of 120° C., and ?y is the fracture point at 200° C.

Abstract: Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. Self-centering mechanisms are provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

Abstract: A bake plate is integrally formed from a copper disk whose lower surface defines a desired heater element channel pattern that is filled with electrically conductive resistive material. Copper contamination is prevented by coating the structure. The channel pattern and fill material may be tailored to optimize thermal uniformity across the bake plate surface, and to produce a bake plate that may be mass produced with substantially uniform and repeatable thermal characteristics.

Abstract: The present invention provides a ceramic substrate which can keep a sufficiently large breakdown voltage even if the pore diameter of its maximum pore is 50 ?m or less to be larger than that of conventional ceramic substrates, can give a large fracture toughness value because of the presence of pores, can resist thermal impact, and can give a small warp amount at high temperature. The ceramic substrate of the present invention is a ceramic substrate for a semiconductor-producing/examining device having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein: the substrate is made of a non-oxide ceramic containing oxygen; and the pore diameter of the maximum pore thereof is 50 ?m or less.

Abstract: A ceramic heater improving a uniformity of temperature distribution in a work heating face, wherein a resistance heating body formed on a face of a ceramic substrate opposite to the work heating face thereof is such that the scattering of thickness is within ±50% of an average thickness, and a surface roughness of the resistance heating body is a range of 0.05-100 ?m as Rmax and not more than 50% of the average thickness.

Abstract: A ceramic heater making it possible to prevent a short circuit in its resistance heating element and heat a semiconductor wafer evenly. The ceramic beater includes a ceramic substrate, an insulating layer having volume resistivity higher than that of the ceramic substrate, being formed on at least a part of the ceramic substrate, and a resistance heating element formed on the insulating layer.