Electron Multiplier Patents (Class 250/207)
  • Patent number: 5886341
    Abstract: A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
    Type: Grant
    Filed: July 29, 1997
    Date of Patent: March 23, 1999
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Naohisa Tateishi, Hisaki Kato, Katurou Hikita
  • Patent number: 5883466
    Abstract: The present invention relates to an electron tube includes, at least, a cathode electrode and a face plate having a photocathode which are arranged at one end of a body, and a stem arranged at the other end of the body for defining the position of an electron entrance surface where the electron emitted from the photocathode reaches. The object of the present invention is to provide an electron tube which can reduce its size and has a structure for improving the workability in its assembling process. In particular, the electron tube in accordance with the present invention comprises a bonding ring, provided between the face plate and the cathode electrode, for bonding the face plate and the cathode electrode together. The bonding ring is made of a metal material selected from the group consisting of In, Au, Pb, alloys containing In, and alloys containing Pb.
    Type: Grant
    Filed: July 14, 1997
    Date of Patent: March 16, 1999
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Motohiro Suyama, Suenori Kimura, Norio Asakura, Ken Hirano, Yoshihiko Kawai, Yutaka Hasegawa, Tetsuya Morita
  • Patent number: 5880457
    Abstract: A voltage division circuit for a photomultiplier tube in which an electron multiplication factor of the photomultiplier tube is readily changeable in a wide range with a low power consumption and without degrading a dynode's collection efficiency and an output linearity. The voltage division portion 100 divides a high voltage (-HV) at a fixed voltage division ratio determined by the resistance values of resistors 111 to 116, 121 and 122, and 131 to 134 to thereby generate voltages applied to a focusing electrode 820, dynodes 831, 832 and 836 to 838. Another voltage division portion 300 includes a variable resistor 332 and generates voltages applied to the dynodes 833 to 835 by dividing the high voltage at a variable voltage division ratio upon operating the variable resistor.
    Type: Grant
    Filed: June 16, 1997
    Date of Patent: March 9, 1999
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kimiyuki Tomiyama, Tsuyoshi Ema
  • Patent number: 5880458
    Abstract: In the photomultiplier tube 1, the focusing electrode plate 17 has the focusing portion 20 for focusing incident electrons and the frame 21 surrounding the focusing portion 20. The focusing portion 20 has a plurality of slit openings 18. The dynode unit 10 is constructed from a plurality of dynode plates 11 laminated one on another. Each dynode plate 11 has a plurality of electron through-holes 13 located in confrontation with the plurality of slit openings 18. A plurality of anodes 9 are provided for receiving electrons emitted from the respective through-holes 13 of the dynode unit 10. The frame 21 has dummy openings 22 at positions located in confrontation with edges 15 of the first stage dynode plate 11a in the dynode unit 10.
    Type: Grant
    Filed: October 21, 1997
    Date of Patent: March 9, 1999
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Hiroyuki Kyushima, Hisaki Katoh
  • Patent number: 5874728
    Abstract: This invention relates to an electron tube having a structure for enabling a stable operation for a long time. In the electron tube, at least a confining mechanism is arranged between a photocathode and the electron incident surface of a semiconductor device, which are arranged to oppose each other through a container. Particularly, the area of the opening of the confining mechanism is smaller than that of the electron incident surface, thereby confining the orbits of photoelectrons from the photocathode. This structure avoids bombardment of electrons arriving at portions other than the electron incident surface of the semiconductor device and prevents the semiconductor device from being unnecessarily charged.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: February 23, 1999
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Motohiro Suyama, Suenori Kimura, Tetsuya Saito, Tetsuya Morita
  • Patent number: 5864207
    Abstract: A photomultiplier includes a photocathode (3); an electron multiplier section (60) for cascade-multiplying photoelectrons emitted from the photocathode (3); a faceplate (2) provided with the photocathode (3); a metal housing (1) accommodating the photocathode (3) and the electron multiplier section (60); and a structure disposed on the faceplate (2) for increasing the effective light entrance region of the faceplate (2). In a preferred embodiment the subject structure includes a lens element (30) attached to the faceplate for increasing the effective light entrance region of the faceplate (2). In order to improve the optical coupling efficiency, either the faceplate (2), or the lens element (30), or both the faceplate (2) and the lens element (30) may further include a protrusion.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: January 26, 1999
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hidehiro Kume, Suenori Kimura
  • Patent number: 5847380
    Abstract: The present invention relates to a versatile side-on type photomultiplier comprising a structure for improving the uniformity in light receiving sensitivity. This photomultiplier comprises a positioning structure for precisely positioning, with respect to the light receiving surface of a photocathode, a lens element which guides light to be detected to a photocathode and constitutes a part of an envelope accommodating the photocathode. The precisely positioned lens element guides the light to be detected into, of the light receiving surface of the photocathode, an effective region where the light receiving sensitivity is high, thereby restraining the light to be detected from reaching the outside of the effective region.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: December 8, 1998
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Masumi Tachino, Hidehiro Kume, Suenori Kimura, Takashi Goto
  • Patent number: 5739522
    Abstract: A flat panel image sensor is provided by combining the photoconductive imaging electrode of a vidicon with a two dimensional array of cold cathode field emitters commonly used for flat panel Field Emission Display (FED) systems. The FED operates normally to emit electrons which are accelerated in prior art displays towards a luminescent phosphor to generate light output proportional to the cathode emission. Rather than accelerating towards a phosphor, electrons, in accordance with the principles of this invention, are accelerated towards a photoconductor layer to replace charge removed from the layer by an incident radiation pattern directed at the photoconductor layer through a layer of transparant, electrically-conducting material which serves as a radiation window. A large area, low cost, small, flat panel sensor is realized.
    Type: Grant
    Filed: August 29, 1996
    Date of Patent: April 14, 1998
    Assignee: University of Connecticut
    Inventor: Donald R. Ouimette
  • Patent number: 5736731
    Abstract: In a photomultiplier tube, a second dynode Dy2 is located in confrontation with a first dynode Dy1 in an electron multiplication portion 6. The second dynode Dy2 is made of material that has a secondary electron emission gain which is substantially saturated with respect to an electric voltage applied thereto.
    Type: Grant
    Filed: July 19, 1996
    Date of Patent: April 7, 1998
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hiroyuki Kyushima, Takayuki Omura, Kimitsugu Nakamura, Suenori Kimura, Yousuke Oohashi, Masuo Ito
  • Patent number: 5726438
    Abstract: A luminous flux measuring device has a gain slaving circuit (10, 9), that receives an electrical output signal (m) produced by a photoreceiver (1) and includes a gain control circuit (9) and a comparator (10). The gain slaving circuit is connected to an A/D converter and a computer to record and evaluate the signal (m) and has a slave memory containing characteristic values (a,b) of a continuous function (f). The gain slaving circuit produces a slave signal (HT) according to the flux received (.PHI.) by the photoreceiver which signal is sent to the gain control circuit so that G=f(m).
    Type: Grant
    Filed: July 15, 1996
    Date of Patent: March 10, 1998
    Assignee: Instruments S.A.
    Inventor: Alain Le Marchand
  • Patent number: 5719390
    Abstract: A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
    Type: Grant
    Filed: June 29, 1995
    Date of Patent: February 17, 1998
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Naohisa Tateishi, Hisaki Kato, Katurou Hikita
  • Patent number: 5703492
    Abstract: In a fault analysis of large-scale integrated (LSI) circuits, a potential distribution image of a non-defective product and another potential distribution image of a defective product are displayed alternately and continuously in time, so that it is possible to acquire in real time an image of any location within a whole surface of the LSI chip. As a result, it can be viewed as if the potential distribution image of the non-defective product and the potential distribution image of the defective product are overlapped or superimposed with over time. Accordingly, a different portion between the non-defective and defective potential distribution images can be seen distinguishably from a coincident portion between the non-defective and defective potential distribution images, so that it is possible to trace the different portion in real time.
    Type: Grant
    Filed: January 10, 1995
    Date of Patent: December 30, 1997
    Assignee: NEC Corporation
    Inventors: Toyokazu Nakamura, Yasuko Hanagama, Tohru Tsujide, Kenji Morohashi
  • Patent number: 5701004
    Abstract: A driving circuit for an electron multiplying device is provided which provides sufficient dynamic range and input-output linearity characteristic and reduces power loss to a greater extent. A cathode is set to a voltage substantially equal to the housing so that an electric field is not developed therebetween. A multiple stages of dynodes are arranged between the cathode and an anode, and a voltage multiplier is provided for applying bias voltages to the dynodes. The voltage multiplier includes a plurality of diodes and a plurality of capacitors. The capacitors are connected to respective ones of the dynodes individually to apply a voltage charged across each of the capacitors to the corresponding dynode. With such voltage multiplier, the dynodes are applied with voltages that increase with proximity of the subject dynode to the anode.
    Type: Grant
    Filed: September 13, 1995
    Date of Patent: December 23, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Takanori Nakaya
  • Patent number: 5680007
    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface.
    Type: Grant
    Filed: July 27, 1995
    Date of Patent: October 21, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Minoru Niigaki, Toru Hirohata, Tomoko Suzuki, Masami Yamada
  • Patent number: 5654536
    Abstract: In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer.
    Type: Grant
    Filed: November 14, 1995
    Date of Patent: August 5, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Motohiro Suyama, Masaharu Muramatsu, Makoto Oishi, Yoshitaka Ishikawa, Koei Yamamoto
  • Patent number: 5633562
    Abstract: This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.
    Type: Grant
    Filed: October 5, 1994
    Date of Patent: May 27, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kazuyoshi Okano, Takehiro Iida, Tetsuo Murata, Nobuharu Suzuki, Hiroaki Washiyama, Yasushi Watase
  • Patent number: 5633493
    Abstract: This image tube converts irradiated electrons into fluorescence by irradiating electrons converted from a light beam by a photocathode onto a YAG crystal member. Since the YAG crystal member is a single unitary solid, the fluorescence generated on the input surface of the YAG crystal member contains no fixed pattern noise.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: May 27, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Suzuki, Minoru Kondo, Yasushi Watase, Yoshihito Suzuki
  • Patent number: 5631459
    Abstract: A device for selecting a remanence of output screens of radiological image intensifier tubes. A luminescent screen (ES1) utilizes two phosphor materials (A, B) exhibiting different remanences and different emission spectra. Wavelength-selective optical filters (Fo) are associated with the luminescent screen ES1 in order to select a remanence chosen by transmitting the corresponding spectral band.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: May 20, 1997
    Assignee: Thomson Tubes Electroniques
    Inventor: Paul de Groot
  • Patent number: 5629515
    Abstract: A radiation measuring apparatus capable of measuring radiation by means of few measuring devices without requiring use of power sources, electronic circuits, etc. in places of measurement, and of carrying out high-efficiency multipoint measurement at low cost. Each scintillation detector is provided with two light outlet ports at the opposite ends thereof, individually, and a plurality of scintillation detectors are connected in series with one another by means of optical fibers. The optical fibers are connected individually to the opposite ends of each scintillation detector, and the optical fibers of a plurality of scintillation detectors are connected in parallel with one another.
    Type: Grant
    Filed: March 17, 1995
    Date of Patent: May 13, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tatsuyuki Maekawa
  • Patent number: 5623182
    Abstract: This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.
    Type: Grant
    Filed: April 10, 1996
    Date of Patent: April 22, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kazuyoshi Okano, Takehiro Iida, Tetsuo Murata, Nobuharu Suzuki, Hiroaki Washiyama, Yasushi Watase
  • Patent number: 5578891
    Abstract: An electron multiplier according to this invention comprises dynodes DY1 .about.DY16 arranged in multi-stages along a direction of incidence of an energy beam for, upon incidence of the energy beam, gradually multiplying secondary electrons to emit the same, a collection electrode A for receiving electrons emitted from that of the dynodes on a last stage, and resistors R1 .about.R16 inserted between the respective dynodes and their adjacent ones, the dynodes, the collecting electrode, and the resistors being mounted between two support plates 10a, 10b disposed in parallel with each other, the resistors being arranged in two rows which sandwich the dynodes.
    Type: Grant
    Filed: June 1, 1995
    Date of Patent: November 26, 1996
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Shiro Sakai, Takehisa Okamoto, Makoto Nakamura
  • Patent number: 5567929
    Abstract: A flat panel image sensor is provided by combining the photoconductive imaging electrode of a vidicon with a two dimensional array of cold cathode field emitters commonly used for flat panel Field Emission Display (FED) systems. The FED operates normally to emit electrons which are accelerated in prior art displays towards a luminescent phosphor to generate light output proportional to the cathode emission. Rather than accelerating towards a phosphor, electrons, in accordance with the principles of this invention, are accelerated towards a photoconductor layer to replace charge removed from the layer by an incident radiation pattern directed at the photoconductor layer through a layer of transparant, electrically-conducting material which serves as a radiation window. A large area, low cost, small, flat panel sensor is realized.
    Type: Grant
    Filed: February 21, 1995
    Date of Patent: October 22, 1996
    Assignee: University of Connecticut
    Inventor: Donald R. Ouimette
  • Patent number: 5561286
    Abstract: A photomultiplier tube saturation indicator is formed by supplying a supplemental light source, typically an light emitting diode (LED), adjacent to the photomultiplier tube. A switch allows the light source to be activated. The light is forwarded to the photomultiplier tube by an optical fiber. If the probe is properly light tight, then a meter attached to the indicator will register the light from the LED. If the probe is no longer light tight, and the saturation indicator is saturated, no signal will be registered when the LED is activated.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: October 1, 1996
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Jeffrey F. Ruch, David J. Urban
  • Patent number: 5554844
    Abstract: A passband-adjustable photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged, so as to effect photo-detection, wherein said photo-detector comprises a photo-electron multiplier, a LiF monocrystal window and a CaF.sub.2 monocrystal window individually deposited with a KCl thin film in the front of a photo-electron multiplier in the photo-detector, wherein said windows means are provided for arbitrarily setting the temperature from the vicinity of liquid nitrogen temperature to the order of 150.degree. C., a photo-electron multiplier having a first dinode deposited a KCl thin film on a surface thereof said photo-electron multiplier, and an output of the photo electron multiplier is connected with a pulse counter circuit through an amplifier, so as to measure anyone selected from the group consisting of light absorption property, window transmissibility and sensitivity as a bandpass filter.
    Type: Grant
    Filed: March 15, 1995
    Date of Patent: September 10, 1996
    Assignee: Hiroshima University
    Inventors: Hirofumi Namatame, Masaki Taniguchi
  • Patent number: 5552595
    Abstract: A narrow band high sensitivity photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged into a photo-electron detector, so as to effect photo-electron detection in a photo-electron multiplier, wherein said photo-electron detector comprises a CaF.sub.2 monocrystal window provided with a KCl thin film in the front of said photo-electron detector, a first dynode deposited with a KCl thin film on a surface thereof, wherein an output of the photo-electron multiplier is applied with a pulse counter circuit through an amplifier, so as to measure light absorption properties, window transmissibility and detection sensitivity as a band pass filter.
    Type: Grant
    Filed: March 15, 1995
    Date of Patent: September 3, 1996
    Assignee: Hiroshima University
    Inventors: Hirofumi Namatame, Masaki Taniguchi
  • Patent number: 5548111
    Abstract: A gain stabilization system for photomultiplier tubes using a pulsed light source, preferably a light emitting diode (LED), the signal of which is detected at the cathode and at the anode. The gain of photomultiplier tube is stabilized by keeping the ratio between the two signals constant.
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: August 20, 1996
    Assignee: Wallac Oy
    Inventors: Jarmo Nurmi, Timo Oikari
  • Patent number: 5525794
    Abstract: An electronic gain control is disclosed for the photomultipliers of a gamma camera which assures that all photomultipliers in the camera have uniform gain for any given ganuna event. A specific dynode in the photomultiplier is isolated from the line resistive voltage divider string in the photomultiplier which places each dynode under incremental voltages. A voltage is then applied to the isolated dynode which can vary anywhere from the voltage the isolated dynode would have had if inserted in the voltage divider string to the voltage that the immediately preceding or immediately succeeding dynode in the string has whereby the photomultiplier's gain is controlled. The applied voltage to the isolated dynode is developed electronically by a voltage to frequency converter coupled by an opto-isolator to a gain voltage divider circuit which cycles the applied voltage between two different voltage potentials tapped from the voltage divider string.
    Type: Grant
    Filed: August 31, 1995
    Date of Patent: June 11, 1996
    Assignee: Summit World Trade Corp.
    Inventor: John C. Gibbons
  • Patent number: 5523556
    Abstract: A Cockcroft-Walton (CW) multiplying circuit is mounted to wrap around a cylindrical structure. A photomultiplier tube (PMT) has a photocathode which emits electrons and has dynodes connected to the CW multiplying circuit. The dynodes are biased to attract electrons from the photocathode. An electrical shield surrounds the PMT and the PMT nests within the shield. The cylindrical structure surrounds the shield and the shield nests within the cylindrical structure. The shield is a conductive material which electrically isolates the PMT from the CW multiplying circuit.
    Type: Grant
    Filed: May 24, 1994
    Date of Patent: June 4, 1996
    Assignee: Schlumberger Technology Corporation
    Inventors: Steve Meddaugh, Mehrzad Mahdavi, Stefan Vajda
  • Patent number: 5512755
    Abstract: An electronic gain control for the photomultipliers of a gamma camera assures that all photomultipliers in the camera have uniform gain for any given gamma event. A specific dynode in the photomultiplier is isolated from the line resistive voltage divider string in the photomultiplier which places each dynode under incremental voltages. A voltage is then applied to the isolated dynode which can vary anywhere from the voltage the isolated dynode would have had if inserted in the voltage divider string to the voltage that the immediately preceding or immediately succeeding dynode in the string has whereby the photomultiplier's gain is controlled. The voltage applied to the isolated dynode is established for each photomultiplier in the camera by individual gain signals developed and stored during calibration of the camera for each radio active isotope whereby all photomultipliers have uniform gain for each isotope.
    Type: Grant
    Filed: May 20, 1994
    Date of Patent: April 30, 1996
    Assignee: Summit World Trade Corp.
    Inventors: David S. Vickers, John C. Gibbons, Geoffrey G. Cochrane
  • Patent number: 5510588
    Abstract: An image intensifier apparatus of this invention comprises a photocathode for converting a first optical image to corresponding photoelectrons, a microchannel plate for multiplying the photoelectrons, impressed with a voltage at both ends thereof, and a fluorescent screen for converting the photoelectrons multiplied in the microchannel plate to a second optical image, emitting the second optical image to an image pickup device. Resistance of the microchannel plate is greater than or equal to 2.8.times.10.sup.15 G.OMEGA. and less than or equal to 2.8.times.10.sup.16 G.OMEGA. per channel.
    Type: Grant
    Filed: April 4, 1994
    Date of Patent: April 23, 1996
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Suzuki, Shoichi Uchiyama
  • Patent number: 5506403
    Abstract: An X-ray image intensifier has a vacuum envelope consisting of glass, and an input window consisting of aluminum and having a sectional meridian radius of curvature which increases from the central portion of the input window to the peripheral portion thereof is arranged on the input side of the vacuum envelope with a metal holding ring and a Kovar ring. An input phosphor surface is arranged adjacent to the inner surface side of the input window, and an X-ray image incident through the input window is converted into a photoelectron image. In order to minimize an influence caused by scattering of X-rays or .gamma.-rays incident through the input window, an input substrate is brought as close to the input window as possible. A coaxial cylindrical focusing electrode and an annular focusing electrode are arranged on the side wall in the vacuum envelope, and an anode is arranged on an output end side.
    Type: Grant
    Filed: October 28, 1994
    Date of Patent: April 9, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hitoshi Yamada, Shozo Sato, Hiroshi Kubo, Atsuya Yoshida
  • Patent number: 5504324
    Abstract: A soft x-ray imaging device is disclosed having a housing defining a housing chamber. A faceplate having a planar surface is secured to the housing so that the planar surface is positioned within the housing chamber. A phosphorus coating is applied to the planar surface of the faceplate for convening electrons to visible light. A microchannel plate for convening x-rays to electrons is secured within the housing chamber so that the microchannel plate is spaced from and parallel to the planar surface of the faceplate. An opening is formed in the housing in alignment with the microchannel plate and this opening is sealingly closed by a window which is made of a material substantially transparent to soft x-rays. This window also creates a vacuum tight housing chamber which is continuously evacuated by a pump.
    Type: Grant
    Filed: April 24, 1995
    Date of Patent: April 2, 1996
    Assignee: Pilot Industries, Inc.
    Inventor: Charles Armentrout
  • Patent number: 5493111
    Abstract: A photomultiplier includes a cascade of microchannel plates which are physically and electrically connected to provide an electron multiplication through the microchannel cascade. One of the microchannel plates is a high-output microchannel plate providing a high level of electron multiplication. This high output microchannel plate is thermally conducted to ambient by a heat transfer path including outwardly disposed microchannel plates in the cascade. A unitary ceramic housing defines a vacuum envelope for the photomultiplier.
    Type: Grant
    Filed: July 30, 1993
    Date of Patent: February 20, 1996
    Assignee: Litton Systems, Inc.
    Inventors: Kevin D. Wheeler, Michael J. Iosue, Bruce Johnson
  • Patent number: 5491331
    Abstract: A soft x-ray imaging device is disclosed having a housing defining a housing chamber. An optic post having a planar surface is secured to the housing so that the planar surface is positioned within the housing chamber. A phosphorus coating is applied to the planar surface of the post for converting electrons to visible light. A microchannel plate for converting x-rays to electrons is secured within the housing chamber so that the microchannel plate is spaced from and parallel to the planar surface of the optic post. An opening is formed in the housing in alignment with the microchannel plate and this opening is sealingly closed by a window which is made of a material substantially transparent to soft x-rays. This window also creates a vacuum tight housing chamber.
    Type: Grant
    Filed: April 25, 1994
    Date of Patent: February 13, 1996
    Assignee: Pilot Industries, Inc.
    Inventor: Charles Armentrout
  • Patent number: 5475227
    Abstract: A focused electron/bombarded hybrid photomultiplier tube comprising a photocathode, focusing electrodes, and a collection anode disposed in a detector body. The collector anode includes a diode for receiving the focused output electron beam from the photocathode. The current gain between the photocathode output current and the detector output signal from the diode is over 1000 at a tube operating voltage of 7 kV. The noise factor has been determined to be 1.1. A hybrid photomultiplier tube includes a photocathode, a photodiode for collecting and multiplying electrons emitted by the photocathode and providing an output signal and electrodes for focusing the electrons on the photodiode. A vacuum envelope encloses a vacuum region between photocathode and the detector. A conductor disposed on or adjacent to a sidewall of the vacuum envelope reduces the effect of electrical charges on the inside wall of the vacuum envelope on the trajectories of the electrons.
    Type: Grant
    Filed: November 28, 1994
    Date of Patent: December 12, 1995
    Assignee: Intevac, Inc.
    Inventor: Ross A. LaRue
  • Patent number: 5453609
    Abstract: An improved multi-channel electron multiplier is provided that exhibits zero cross-talk and high rate operation. Resistive material input and output masks are employed to control divergence of electrons. Electron multiplication takes place in closed channels. Several embodiments are provided for these channels including a continuous resistive emissive multiplier and a discrete resistive multiplier with discrete dynode chains interspaced with resistive layers-masks. Both basic embodiments provide high gain multiplication of electrons without accumulating surface charges while containing electrons to their proper channels to eliminate cross-talk. The invention can be for example applied to improve the performance of ion mass spectrometers, positron emission tomography devices, in DNA sequencing and other beta radiography applications and in many applications in particle physics.
    Type: Grant
    Filed: October 22, 1993
    Date of Patent: September 26, 1995
    Assignee: Southeastern Universities Research Assn., Inc.
    Inventors: Javier Gomez, Stanislaw Majewski, Andrew G. Weisenberger
  • Patent number: 5453610
    Abstract: An electronic gain control is disclosed for the photomultipliers of a gamma camera which assures that all photomultipliers in the camera have uniform gain for any given gamma event. A specific dynode in the photomultiplier is isolated from the line resistive voltage divider string in the photomultiplier which places each dynode under incremental voltages. A voltage is then applied to the isolated dynode which can vary anywhere from the voltage the isolated dynode would have had if inserted in the voltage divider string to the voltage that the immediately preceding or immediately succeeding dynode in the string has whereby the photomultiplier's gain is controlled. The applied voltage to the isolated dynode is developed electronically by a voltage to frequency converter coupled by an opto-isolator to a gain voltage divider circuit which cycles the applied voltage between two different voltage potentials tapped from the voltage divider string.
    Type: Grant
    Filed: May 20, 1994
    Date of Patent: September 26, 1995
    Assignee: Summit World Trade Corporation
    Inventor: John C. Gibbons
  • Patent number: 5449897
    Abstract: An automatic gain calibration system for photomultipliers of a scintillation detector operable during periods when a collimator is installed to the scintillation detector. The system provides for calibration of the photomultipliers (PMTs) that are located along the periphery of the detector whose surfaces that are partially or totally obscured by the solid lead edge regions of the installed collimator (e.g., obscured PMTs). In such a manner, the entire scintillation detector may be calibrated effectively without removal of the heavy and awkwardly handled collimator. The automatic calibration system adjusts the preamplification gain associated with each channel of the PMT array to maintain the effective gain of each PMT in response to long term variations in the characteristic gain of each PMT. For calibration, the system measures the response of an obscured PMT to gamma events occurring within a thin strip area that extends into the central portion of the collimator.
    Type: Grant
    Filed: October 3, 1994
    Date of Patent: September 12, 1995
    Assignee: ADAC Laboratories
    Inventors: Hugo Bertelsen, Horace H. Hines
  • Patent number: 5446275
    Abstract: The electron multiplying device according to this invention comprises an electron multiplying unit including dynodes arranged in a plurality of stages. The electron multiplying unit has an incidence opening for an energy beam to be multiplied to enter through, and has the proximal end secured to a base. There is provided a casing for housing the electron multiplying unit. The forward edge of the casing is secured to the base, and a space defined by the base and the casing houses the electron multiplying unit. The casing has an entrance window formed at a position opposed to the incidence opening. Energy beams enter the electron multiplying unit through the entrance window, but the electron multiplying unit itself is housed in the casing to be protected from surrounding air flow and unnecessary energy beams not to be measured.
    Type: Grant
    Filed: May 19, 1993
    Date of Patent: August 29, 1995
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Shiro Sakai, Takehisa Okamoto, Makoto Nakamura, Haruhisa Yamaguchi, Tetsuya Morita
  • Patent number: 5444260
    Abstract: A method for selecting and removing single specific atoms from a solid material surface uses photon biasing to break down bonds that hold the selected atom in the lattice and to reduce barrier effects that hold the atom from transferring to a probe. The photon bias is preferably light or other electromagnetic radiation with a wavelength and frequency that approximately matches the wave function of the target atom species to be removed to induce high energy, selective thermionic-like vibration. An electric field potential is then applied between the probe and the surface of the solid material to pull the atom out of the lattice and to transfer the atom to the probe. Different extrinsic atoms can be installed in the lattice sites that are vacated by the removed atoms by using a photon bias that resonates the extrinsic atom species, reversing polarity of the electric field, and blowing gas comprising the extrinsic atoms through a hollow catheter probe.
    Type: Grant
    Filed: July 1, 1993
    Date of Patent: August 22, 1995
    Assignee: Midwest Reasearch Institute
    Inventor: Lawrence L. Kazmerski
  • Patent number: 5440115
    Abstract: The invention employs a reverse biased zener diode in the output circuit of a single stage or multistage electron multiplier. In a multistage device, a bypass resistor is employed between stages for increasing the bias current in downstream stages which operates at reduced potential whereby power dissipation is minimized.
    Type: Grant
    Filed: April 5, 1994
    Date of Patent: August 8, 1995
    Assignee: Galileo Electro-Optics Corporation
    Inventors: Anthony S. Bauco, Alan M. Then
  • Patent number: 5438191
    Abstract: The present invention pertains to a photomultiplier of head-on type that has a transparent tubular glass bulb and a principal photocathode formed on the internal surface of a closed end of the glass bulb, that is, on the internal surface of a light entrance window. In addition, this photomultiplier has a side photocathode formed on the entire internal surface of side wall of the glass bulb in the region adjacent to the principal photocathode. A reflection film is formed on the outer surface of side wall of the glass bulb and opposes to the side photocathode. Some light entering the peripheral portion of the light entrance window of the glass bulb and traveling toward the outer surface of side wall is reflected inwardly by the reflection film and reaches the side photocathode, where the light is to be converted into photoelectrons. The photoelectrons are guided to the electron multiplying unit in glass bulb, where the photoelectrons are multiplied and detected by an anode.
    Type: Grant
    Filed: August 6, 1993
    Date of Patent: August 1, 1995
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Suenori Kimura, Nobuyuki Ohsugi, Toshiharu Totsuka
  • Patent number: 5401951
    Abstract: An overload protection circuit for a photomultiplier tube. A light source illuminates a photomultiplier tube which produces a signal proportional to the incoming radiation which is sent to photon counting electronics. The photon counting electronics produces a signal in proportion to the input photons to the photomultiplier tube and also provides an output to a frequency to voltage converter. The frequency to voltage converter is used to modulate a high voltage amplifier which controls the output of the photomultiplier tube. When the photon counting electronics indicate to the frequency to voltage converter that the photons produced by the photomultiplier tube exceed a predetermined maximum the high voltage amplifier reduces the gain of the photomultiplier tube. The gain of the photomultiplier tube is gradually reduced in proportion to the incident light level.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: March 28, 1995
    Assignee: Loral Infrared & Imaging Systems, Inc.
    Inventors: Neal R. Butler, Patrick J. Cobler
  • Patent number: 5391874
    Abstract: A microchannel plate (MCP)-based detector of reduced size employs a flexible multilayer printed circuit board as a lead assembly and enjoys increased ease of assembly and improved versatility.
    Type: Grant
    Filed: August 17, 1993
    Date of Patent: February 21, 1995
    Assignee: Galileo Electro-Optics Corporation
    Inventor: Glenn Ellis
  • Patent number: 5374826
    Abstract: A focused electron/bombarded (FEB) ion detector comprising an MCP, focusing means, and a collection anode disposed in a detector body. The collector anode includes a diode for receiving the focused output electron beam from the MCP. The gain between the input ion current to the MCP and the detector output signal from the diode is on the order of 1-100 million, depending on the device configuration and applied biasing voltages. A hybrid photomultiplier tube includes a photocathode, a photodiode for collecting and multiplying electrons emitted by the photocathode and providing an output signal and electrodes for focusing the electrons on the photodiode. A vacuum envelope encloses a vacuum region between photocathode and the detector. A conductor disposed on or adjacent to a sidewall of the vacuum envelope reduces the effect of electrical charges on the inside wall of the vacuum envelope on the trajectories of the electrons.
    Type: Grant
    Filed: July 14, 1993
    Date of Patent: December 20, 1994
    Assignee: Intevac, Inc.
    Inventors: Ross A. LaRue, Kenneth A. Costello, Verle W. Aebi
  • Patent number: 5371350
    Abstract: An electronic device for measuring extremely faint light emissions comprises a photomultiplier tube surrounded by a sleeve made of a material which is a good heat conductor, cooled to a low temperature and insulated from the outside, a thermally insulating and optically transparent lightguide body being stably glued to the photocathode of the photomultiplier tube to receive the light radiation emitted by a specimen to be examined, which is inserted in a cavity of a supporting structure holding a rotary body which can be turned in front of the lightguide body, so as to operate as a shutter for the lightguide in a first turned measurement position thereof to allow measurement of the dark signal and then allow, as the rotary body and the specimen held therein are turned to a second measurement position, to measure the light emission from the specimen.
    Type: Grant
    Filed: July 20, 1993
    Date of Patent: December 6, 1994
    Inventor: Guido Motolese
  • Patent number: 5340976
    Abstract: A bandpass photon detector for inverse photoemission spectroscopy comprises a sample chamber and an analyzer chamber connected to a vacuum exhaust system, respectively; a photon detector connected to the analyzer chamber; the sample chamber and the analyzer chamber are switchably connected through a gate valve and provided with a sample transfer system for transferring a sample held at a center axial line of the sample chamber to a center portion of the analyzer chamber, the analyzer chamber is provided with an electron gun opposed to a sample positioned at a center where the sample is transferred and a photomultiplier comprising a low cut filter consisting of Cu-BeO at the opposite side of the electron gun, wherein a potassium chloride is deposited in a thickness of 500-1000 .ANG. on a first diode of said photomultiplier, thereby high inverse photoemission spectroscopy can be measured so as to analysis and estimation of semiconductors and magnetic material.
    Type: Grant
    Filed: March 18, 1993
    Date of Patent: August 23, 1994
    Assignee: Hiroshima University
    Inventors: Masaki Taniguchi, Toshiaki Ohta
  • Patent number: 5336966
    Abstract: A high performance reflection type photocathode for use in a photomultiplier tube is formed by sequentially depositing three layers on a substrate made of nickel. The first layer is made of either one of chromium, manganese and magnesium as a major component and is deposited over the substrate. The second layer is made of aluminum as a major component and is deposited over the first layer. The third layer is made of antimony and at least one kind of alkaline metals and is deposited over the second layer.
    Type: Grant
    Filed: September 11, 1992
    Date of Patent: August 9, 1994
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kiyoshi Nakatsugawa, Kazuyoshi Oguri, Hiroyuki Onda, Hiroyuki Watanabe
  • Patent number: 5329110
    Abstract: A microelectronic photomultiplier device is fabricated by discrete proceds to provide a photocathode-anode and dynode chain arrangement which is analogous in operation to conventional photomultiplier tubes. This microelectronic photomultiplier device provides for low level photon detection and realizes the advantages of high reliability, small size and fast response, plus lower cost, weight and power consumption compared to conventional photomultiplier tubes. In addition, the fabrication on an SOI substrate permits integration of logic and control circuitry with detectors. The insulating substrate also permits the integration of an on-chip high voltage supply and may easily be extended to a plurality of detectors offering improved performance and design flexibility.
    Type: Grant
    Filed: November 22, 1993
    Date of Patent: July 12, 1994
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Randy L. Shimabukuro, Stephen D. Russell
  • Patent number: RE35884
    Abstract: A microchannel plate (MCP)-based detector of reduced size employs a flexible multilayer printed circuit board as a lead assembly and enjoys increased ease of assembly and improved versatility.
    Type: Grant
    Filed: February 20, 1997
    Date of Patent: September 1, 1998
    Assignee: Galileo Electro-Optics Corporation
    Inventor: Glenn Ellis