Abstract: An extension line of a tube axis of a photomultiplier tube is shifted from the center of gravity position of a front surface of a housing, which allows a space to be formed at an opposite side in the housing. A signal processing board is arranged in this space, and a high-voltage generating circuit board is fixed on the extension line of the tube axis, and thus the interior space of a housing can be effectively used. Since the signal processing board can be made adjacent to a tube wall of the photomultiplier tube, even when the length in a tube axis direction of the signal processing board is long, it becomes possible to house the same in the housing. Therefore, it becomes possible to achieve miniaturization.

Abstract: The invention relates to a photomultiplier (10) with a fastening device, where the photomultiplier (10) has a solid cylindrical body, particularly a glass body (11), and a tubular jacket, a light inlet (12) on the front end and connecting contacts (14) on the back end, and where the fastening device has a socket (20) on the front end and a plug contact (30) resting on the connecting contacts (14) on the back end, and where a force-fitting and form-fitting connection is produced between the plug contact (30) and the socket (20) by means of a connecting component (40).

Abstract: A device and method are presented for use in measuring photon energy. The device comprises at least one pixel unit (10) including a Photocathode (12) that emits electrons in response to absorbed photons; an Anode (14); and a control unit (19) operable for controlling an electric current from the Photocathode (12) to the Anode (14) so as to selectively prevent electrons' arrival to the Anode (14) to thereby scan a spectrum of photon energies incident on the Photocathode (12).

Abstract: Method and systems related to obstructing a first predefined portion of at least one defined wavelength of light incident upon a first photo-detector array; and detecting the at least one defined wavelength of light with a photo-detector in a second photo-detector array.

Abstract: A time-resolved measurement apparatus (100) reads a detection timing pulse from an MCP (24) in a front-side MCP stack (30) in a photomultiplier tube (14). A detection timing of a photon is determined based on this pulse. A principal component of this pulse is a potential rise pulse in response to the emission of photoelectrons from the MCP (24), and it has the positive polarity. On the other hand, when photoelectrons are incident on the front-side stack (30), a pulse of the negative polarity is generated to deform the waveform of the detection timing pulse. However, since the number of the photoelectrons incident on the front-side stack (30) is fewer than that of those incident on a rear-side stack (32), the negative component is small in the detection timing pulse. This results in enhancing the time precision of the time-resolved measurement.

Abstract: A photon detector has a photocathode for the photon-induced triggering of measuring electrons. Spatial position information is supplied by an at least one-dimensional electron-detector pixel array. An electron optics unit serves for guiding the measuring electrons to the array. Each pixel (19) has an electronic converter unit (20) for converting an analog measuring signal of the pixel (19) into a digital measuring signal, which incorporates a discriminator for background suppression. An electronic post-processing unit (39) serves for processing the digital measuring signal. The converter unit (20) of each pixel (19) has at least one clock generator (36), as well as at least one counter (29, 30), which is in signal connection with the clock generator (36) and discriminator (27) for generation of a digital timing signal.

Abstract: A photomultiplier (2) is disclosed having an element (16) for modifying the gain thereof either during manufacture (after the normal activation process) or in use, by changing the secondary electron emission characteristics of dynodes of the photomultiplier (2) and/or by modifying the electromagnetic field within the photomultiplier (2). The element (16) is made of a different material than the emissive surface of dynodes (8) of the photomultiplier (2). Methods of manufacturing a photomultiplier (2) and of tuning the gain of a photomultiplier (2) are also disclosed.

Abstract: In this control circuit, based on a reference potential generated in a high-voltage generating circuit, a comparator outputs an over-light incidence discrimination signal to the outside of a module. It is revealed that, when an over-light incidence discrimination signal switched to high level from low level is outputted to the outside, data to be outputted from an anode terminal has no reliability while data has reliability before switching. Therefore, detection can be performed while determining reliability.

Abstract: In an MCP assembly 10 having one or a plurality of MCPs 5, 6 sandwiched with an input-side electrode 4 and an output-side electrode 7, there provided at the surface facing the MCP 5, 6 of at least either (preferably, both) of the input-side electrode 4 and the output-side electrode 7, is a substantially annular contact face that contacts the MCP surface to fix the same, and there provided at a periphery of the contact face is a separation surface retracted in a direction to be separated from the MCP surface. Thereby, provided is an MCP assembly having a construction enabled to prevent damage to the MCP in manufacturing and handling.

Abstract: A method of measuring an anode current in an electron-multiplier device having an anode, a cathode, dynodes and a voltage divider network for applying voltages to the dynodes, which method includes applying an HV positive voltage to the anode and intermediate voltages to the dynodes, the cathode being at or near circuit ground potential, conducting dynode currents through or in parallel to the voltage divider to a point substantially at cathode potential, and deriving from those currents a current representative of the anode current.

Abstract: An electron multiplying solid-state image pickup apparatus which obtains a desired electron multiplying gain through adjusting a voltage applied to an electron multiplying gate electrode includes an electron multiplying unit, a test signal supply unit and a control unit. The electron multiplying unit multiplies an electron corresponding to an input signal by an electric field generated by the applied voltage. The test signal supply unit supplies a test signal to the electron multiplying unit. The control unit compares a level of the test signal multiplied by the electron multiplying unit with an expected level determined in advance, and adjusts the voltage applied to the electron multiplying gate electrode so that the multiplied test signal level is equal to or larger than the expected level.

Abstract: A microchannel plate (MCP) for an image intensifier includes an active portion having an input surface area for receiving electrons and an output surface area for outputting multiplied electrons. The input and output surface areas are oriented horizontally with respect to each other and spaced by a vertical distance. A non-active portion surrounds the active portion of the MCP. The non-active portion includes at least one slot extending vertically into the non-active portion and extending horizontally to form a horizontal slotted area. When the MCP is positioned vertically above an electron sensing device having wires looping vertically above the electron sensing device, the slot is configured to receive a portion of the wires, resulting in a vertical clearance between the MCP and the electron sensing device. The wires loop a vertical looping distance above a surface of the electron sensing device, and a portion of the vertical looping distance is configured to be received within the slot of the MCP.

Abstract: A pixel for a CMOS photo sensor having a photosensitive element configured to collect charge when light strikes the photosensitive element, a charge-multiplication circuit having a first electrode, a second electrode, and a third electrode, the charge-multiplication circuit is configured to transfer the charge from the photosensitive element to the first electrode, apply a predetermined voltage to the second electrode to induce charge multiplication, transfer the charge from the first electrode to the second electrode for charge multiplication, and transfer a plurality of charge from the second electrode to the third electrode and onto a sense node, and a readout circuit coupled to the sense node, the readout circuit measures a voltage corresponding to the plurality of charge transferred to the sense node.

Abstract: A photo detecting device comprises a photo-electron generating body, which absorbs light and generates photo-electrons, and a transistor, across which an electric current flows in accordance with a quantity of the photo-electrons having been generated by the photo-electron generating body. An electrical insulator is formed on a surface of the photo-electron generating body. The transistor is provided with a source electrode and a drain electrode, which are formed on the electrical insulator having been formed on the surface of the photo-electron generating body. The source electrode and the drain electrode of the transistor are connected with each other via a channel section containing a nano-tube having electrically conductive or semi-conductive characteristics.

Abstract: In some embodiments, an electron multiplier includes a neutron-sensitive composition having, in weight percent, approximately 30% to approximately 60% silicon oxide, approximately 20% to approximately 60% lead oxide, and approximately 1% to approximately 15% boron-10 enriched boron oxide. The composition is capable of interacting with neutrons to form an electron cascade. The electron multiplier can be in the form of a microchannel plate, a microfiber plate, or a microsphere plate.

Abstract: A night vision system has an image intensifier tube that may be installed or replaced without requiring realignment of the optics. A first locating feature may be coupled to the image intensifier tube to align the first locating feature with an input optical axis of the image intensifier tube. A second locating feature may be coupled to the image intensifier tube to align the second locating feature with the output optical center of the image intensifier tube and form an image at a predetermined location along the output optical axis.

Abstract: Method and systems related to obstructing a first predefined portion of at least one defined wavelength of light incident upon a first photo-detector array; and detecting the at least one defined wavelength of light with a photo-detector in a second photo-detector array.

Abstract: Time-resolved analysis of a spectrum is performed by illuminating a one-dimensional array of charge-transfer device light-sensitive pixel cells and periodically non-destructively copying charges in the light-sensitive cells to respective storage cells (“row storage registers”) co-located with the light-sensitive cells in an integrated circuit. Information about the charges stored in at least some of the storage cells is provided to a component external to the integrated circuit.

Abstract: An insulating tube has one end and another end. An avalanche photodiode (APD) is provided outside the one end of the insulating tube. The another end of the insulating tube is air-tightly connected to an outer flange through a stem inner wall. Capacitors electrically connected to the APD are provided in the insulating tube. The capacitors remove direct current components from signals that the APD generates when detecting electrons. By providing the capacitors in the insulating tube, response of output signals can be prevented from being impaired.

Abstract: A photomultiplier tube circuit with reduced power consumption comprising a photomultiplier tube having a plurality of dynodes, charging circuitry for providing charge to the plurality of dynodes and an oscillator for providing a high voltage supply to the charging circuitry characterised in that the photomultiplier tube circuit further comprises means for sampling the voltage of at least one of the dynodes and a switching means for switching the oscillator on and off with respect to the at least one dynode voltage sampled.

Abstract: A photo cathode converts an incident light into photoelectrons. A photomultiplier kept vacuum inside thereof, amplifies photoelectrons converted by the photo cathode. Photoelectrons intensified by the photomultiplier arrives at an output electrode array, and a current signal produced by the photoelectrons arriving at the output electrode array is directly read outside the photomultiplier via metal bulbs or anisotropic conductive rubber.

Abstract: A photomultiplier tube circuit with reduced power consumption comprising a photomultiplier tube having a plurality of dynodes, charging circuitry for providing charge to the plurality of dynodes and an oscillator for providing a high voltage supply to the charging circuitry characterised in that the photomultiplier tube circuit further comprises means for sampling the voltage of at least one of the dynodes and a switching means for switching the oscillator on and off with respect to the at least one dynode voltage sampled.

Abstract: The present invention provides a digital imaging photodetector with a gas electron multiplier. The digital imaging photodetector comprises a gas electron multiplier detector. The gas electron multiplier detector includes a photoelectric converter for converting incident light into photoelectrons or Compton electrons; a gas electron multiplier (GEM) for receiving the photoelectrons or Compton electrons from the photoelectric converter and multiplying them; and a readout unit for receiving an electrical signal indicating a position where an electron cloud multiplied in the gas electron multiplier arrives on an anode, recognizing coordinates of the electron cloud based on the received signal, and outputting the coordinates of the electron cloud.

Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm?3 and which consists of cells, each of which comprises a p-type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm?3 and which is grown on the substrate, a p-type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm?3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm?3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells.

Abstract: In this control circuit, based on a reference potential generated in a high-voltage generating circuit, a comparator outputs an over-light incidence discrimination signal to the outside of a module. It is revealed that, when an over-light incidence discrimination signal switched to high level from low level is outputted to the outside, data to be outputted from an anode terminal has no reliability while data has reliability before switching. Therefore, detection can be performed while determining reliability.

Abstract: An extension line of a tube axis of a photomultiplier tube is shifted from the center of gravity position of a front surface of a housing, which allows a space to be formed at an opposite side in the housing. A signal processing board is arranged in this space, and a high-voltage generating circuit board is fixed on the extension line of the tube axis, and thus the interior space of a housing can be effectively used. Since the signal processing board can be made adjacent to a tube wall of the photomultiplier tube, even when the length in a tube axis direction of the signal processing board is long, it becomes possible to house the same in the housing. Therefore, it becomes possible to achieve miniaturization.

Abstract: An electron sensing device for receiving electrons from an output surface of an electron gain device includes a silicon die having an active surface area for positioning below the output surface of the electron gain device. An array of first bond pads is disposed on a periphery of the active surface area of the silicon die. A ceramic carrier is positioned below the silicon die, including a second array of bond pads disposed on the ceramic carrier and arranged in a substantially vertical alignment to the first array of bond pads. A plurality of conductive via holes is disposed in the ceramic carrier for electrically connecting the first array of bond pads to the second array of bond pads. When the imager is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.

Abstract: An electron multiplying solid-state image pickup apparatus which obtains a desired electron multiplying gain through adjusting a voltage applied to an electron multiplying gate electrode includes an electron multiplying unit, a test signal supply unit and a control unit. The electron multiplying unit multiplies an electron corresponding to an input signal by an electric field generated by the applied voltage. The test signal supply unit supplies a test signal to the electron multiplying unit. The control unit compares a level of the test signal multiplied by the electron multiplying unit with an expected level determined in advance, and adjusts the voltage applied to the electron multiplying gate electrode so that the multiplied test signal level is equal to or larger than the expected level.

Abstract: A gated optical image intensifier 10 is provided with multiple intensifying channels 20, 22, 24, 26 each supplied with radiation via a respective optical channel of an optical splitter. The separate intensifying channels are subject to gating by a sequence of time spaced gating signals generated by an electronic gating signal generator. The multi-channel gated optical image intensifier has particular utility in the field of fluorescence lifetime imaging.

Abstract: The present invention relates to a photomultiplier having a structure that enables to perform high gain and satisfy higher required characteristics. In the photomultiplier, an electron-multiplying unit accommodated in a sealed container comprises a focusing electrode, an accelerating electrode, a dynode unit, and an anode. Particularly, at least the accelerating electrode and dynode unit are held unitedly in a state that at least a first-stage dynode and a second-stage included in the dynode unit are opposite directly to the accelerating electrode not through a conductive material. A conventional metal disk for supporting directly dynodes which are set to the same potential as that of the first-stage dynode is not placed between the accelerating electrode and dynode unit; thus, variations of the transit time of electrons may be drastically reduced while the electrons reach from the cathode to the second-stage dynode via the first-stage dynode.

Abstract: A time-resolved measurement apparatus (100) acquires a detection timing pulse from an output terminal (34) attached to a micro channel plate (30) in a photomultiplier tube (14). A position-time measuring circuit (16) generates a signal indicating the time difference between a reference time pulse synchronized with excitation of a sample (10) and the detection timing pulse, and feeds the signal to a data processor (18). The data processor stores this time difference as a detection time of light emission. The data processor corrects the detection time according to the distance between the position at which the detection timing pulse is generated on the micro channel plate and the output terminal. This enhances the precision of time-resolved measurement.

Abstract: A method of fabricating a multichannel plate is provided. The method includes providing a N layers, each layer having an array of wells formed therein. The N layers are aligned and stacked. The stack of N layers are sliced along a first and second line of the array of wells. The first line of the array of wells provides a first surface corresponding to a first array of channel openings of the MCP, and the second line of said array of wells provides a second surface corresponding to a second array of channel openings of the MCP. This method provides several functional benefits compared to conventional methods. These include, but are not limited to: the ability to produce well known and well characterized channels; the ability to produce well known and well characterized periods between channels; the ability to produce channels having any desired secondary electron emission enabling material therein; the ability to fabricate the substrate and/or final MCP of silicon.

Abstract: A multi-purpose efficient charge particle detector that by switching bias voltages measures either secondary ions, or secondary electrons (SE) from a sample, or secondary electrons that originate from back scattered electrons (SE3), is described. The basic version of the detector structure and two stripped down versions enable its use for the following detection combinations: The major version is for measuring secondary ions, or secondary electrons from the sample, or secondary electrons due to back-scattered electrons that hit parts other than the sample together or without secondary electrons from the sample. Measuring secondary ions or secondary electrons from the sample (no SE3). Measuring secondary electrons from the sample and/or secondary electrons resulting from back-scattered electrons hitting objects other than the sample (no ions).

Abstract: A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure. Single 111Cd+ qubit ions are confined in a radiofrequency linear ion trap on a semiconductor chip by applying a combination of static and oscillating electric potentials to integrated electrodes. The electrodes are lithographically patterned from a monolithic semiconductor substrate, eliminating the need for manual assembly and alignment of individual electrodes. The scaling of this structure to hundreds or thousands of electrodes is possible with existing semiconductor fabrication technology.

Abstract: A microchannel amplifier includes an insulating substrate that defines at least one microchannel pore through the substrate from an input surface to an output surface. A conductive layer is formed on an outer surface of the at least one microchannel pore that has a non-uniform resistance as a function of distance through the at least one microchannel pore. The non-uniform resistance is selected to simulate saturation by reducing gain as a function of input current and bias voltage compared with uniform resistance. A first and second electrode is deposited on a respective one of the input and the output surfaces of the insulating substrate. The microchannel amplifier amplifying emissions propagating through the at least one microchannel pore when the first and second electrodes are biased.

Abstract: An electron multiplier includes a plate having a plurality of interconnected particles, e.g., fibers, having electron-emissive surfaces. The particles may include a neutron-sensitive and/or neutron reactive material, such as 6Li, 10B, 155Gd, 157Gd,—and/or hydrogenous compounds, in excess of their natural abundance. The particles may include an X-ray sensitive and/or X-ray reactive material, such as Pb.

Abstract: An EMCCD detector includes a first gain register and a photoactive area divided into at least a two detection regions. At least one of the detection regions is assigned to the first gain register.

Abstract: A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO).

Abstract: Methods and apparatus for imaging light are disclosed. Light is imaged by collecting light, converting the collected light into a electrical charge signal, multiplying the electrical charge signal to produce multiple electrical charge signals with associated levels of gain, converting the electrical charge signals to voltage signals, and developing an output signal from one or more of the voltage signals that represents the collected light. The electrical charge signal may be multiplied using an electron multiplication device associated with multiple taps to produce the electrical charge signal with different levels of gain.

Abstract: In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.

Abstract: According to some embodiments of the invention, an image intensifier is provided. The image intensifier comprises a layer of electrically isolated electrode segments each able to receive an electrical potential independently of the other electrode segments. The electrode segments may be coated onto an inner surface of an entrance window and each of the electrode segments is coated with a photocathode segment. Alternatively, the electrode segments are positioned between a photocathode layer and a micro channel plate.

Abstract: A photomultiplier system includes a detector tube, a power supply unit, and a thermal isolation element. The power supply unit provides an accelerating voltage for operating the detector tube. The detector tube and the power supply unit are disposed on different sides of the thermal isolation element.

Abstract: Photon counting electronics and method that allow for counting single photons with sensitivity, linearity, and accuracy. The method for accurately counting photon numbers entering a photon multiplier tube comprising the steps of counting the number of the electrical pulses generated by photons; measuring the duration of the electrical pulses with a timing clock, wherein the timing clock can count the number of temporally overlapped photons; measuring the intensity of the electrical pulses with an intensity discriminator, wherein the intensity discriminator can count the number of intensity-overlapped photons; and summing the number of the electrical pulses, the number of temporally overlapped photon, and the number of intensity-overlapped photons, that is equal to the total number of photons.

Abstract: In a photomultiplier tube (PMT) device having a plurality of dynodes provided between a cathode and an anode, a cancellation circuit provides two different modulation signals to the PMT to cancel the effects of the modulation signals upon the output of the PMT. For one embodiment, a cancellation circuit includes an input to receive an input modulation signal, a first output to provide a first output modulation signal to a first dynode, and a second output to provide a second output modulation signal to a second dynode, wherein the first and second output modulation signals are 180 degrees out-of-phase. For another embodiment, the cancellation circuit provides the input modulation signal to one of the PMT's dynodes, and also subtracts the input modulation signal from the PMT's output signal.

Abstract: A weak light detector (40) which can detect two-dimensional weak radiation at a high speed with high precision. The fluorescence from the DNA chip (46) is incident on a detection part (56) of a detection unit (52). The detection unit (56) has a detection module with a number of detection transistors being placed to correspond to cells of the DNA chip (46). The detection part (56) performs photoelectric conversion of the incident fluorescence (photon) to emit electrons, and amplifies the electrons to make them incident on the detection module. The detection transistors are switched based the Hadamard matrix to operate. A data processing unit (54) reads an output signal of the detection part (56), then performs Hadamard inversion, and determines the detection transistor which outputs the signal.

Abstract: The present invention relates to a photodetector that has a structure capable of realizing a wide range gain adjustment for each of electron multiplier channels respectively assigned to a plurality of light incidence regions of a multi-anode multiplier. The photodetector comprises a multi-anode photomultiplier, and a bleeder circuit unit. The multi-anode multiplier has a dynode unit constituted by N (an integer or no less than 3) dynode plates, and n-th (an integer of no less then 2) dynode plate is constituted by a plurality of control plates respectively corresponding to the multiplier channels. The bleeder circuit unit has a primary section setting each potential of a first to (n?1)-th and (n+1)-th to N-th dynode plates, and a secondary section for individually setting a potential of each control plate at any potential within the range wider than a potential difference between the (n?1)-th and (n+1) dynode plates.

Abstract: This SEM has a capability of preventing shift of a view field of the foreign matters at a stage where no sufficient correction is carried out when obtaining the SEM coordinate values used for transforming the coordinate values of the foreign matters on the sample sent from another device into the SEM coordinate values. The SEM selects the foreign matters closer to the center of the sample at first and then the foreign matters spirally from the center of the sample to the outer periphery.

Abstract: The present invention provides a practical design of a megavoltage x-ray detector with both high quantum efficiency (QE) and high resolution. The x-ray detector includes an optical-fiber taper (OFT) made from a large number of optical fibers, each of which is aligned with the incident x-rays from an x-ray source hitting a top surface of the optical fiber taper. The optical-fiber taper is a matrix of optical fibers with the core material made of, e.g., silica and coated with a cladding glass or polymer such that light created within the core of each optical fiber will be guided to the bottom ends of the fiber with the ends of the fibers at the bottom being optically coupled to and optical image read-out device. Each optical fiber in the optical fiber taper is fully aligned with the incident x-ray source so that x-rays entering the top of the fiber travel directly towards the bottom of the same fiber.

Abstract: An optronic observation device including a detector having a photocathode and a sensor arranged to receive an incident light beam. The device also including a switch to position an optical element opposite the detector in the pathway of the incident beam or to retract the optical element and a focusing element to focus an incident ray on the photocathode when the optical element is in a retracted position. When the optical element is positioned opposite the detector, it is able to focus the beam on the sensor and to filter the beam spectrally to block all or part of the wavelengths for which the responsiveness of the photocathode is greater than a given threshold.

Abstract: A night vision goggle system is provided having an image intensifier tube that may be installed or replaced without requiring realignment of the optics. The image intensifier tube is coupled to a first locating feature that is in a predetermined relationship to the optical center of the image intensifier tube. The system includes a second locating feature that interacts with the first locating feature to position the image intensifier tube in a predetermined relationship to an optical component of the night vision system.