Abstract: A robotic object handling system comprises a robot arm, an image sensor, a first station, and a computing device. The computing device is to cause the robot arm to pick up an object on an end effector, cause the image sensor to generate sensor data of the object, determine at least one of (i) a rotational error of the object or (ii) a positional error of the object based on the sensor data, cause an adjustment to the robot arm to approximately remove at least one of the rotational error or the positional error, and cause the robot arm to place the object at the first station without at least one of the rotational error or the positional error.

Abstract: Various cell analysis systems of the present teachings can measure the electrical and metabolic activity of single, living cells with subcellular addressability and simultaneous data acquisition for between about 10 cells to about 500,000 cells in a single analysis. Various sensor array devices of the present teachings can have sensor arrays with between 20 million to 660 million ChemFET sensors built into a massively paralleled array and can provide for simultaneous measurement of cells with data acquisition rates in the kilohertz (kHz) range. As various ChemFET sensor arrays of the present teachings can detect chemical analytes as well detect changes in cell membrane potential, various cell analysis systems of the present teachings also provide for the controlled chemical and electrical interrogation of cells.

Abstract: In one aspect, a magnetic field current sensor includes an annihilation detector. The annihilation detector includes an annihilation bridge that includes magnetoresistance elements. The annihilation detector also includes a current bridge that includes at least two of the magnetoresistance elements, a first comparator configured to compare an output signal from the annihilation bridge and a second comparator configured to compare an output signal from the current bridge. An output of the annihilation detector indicates whether an annihilation exists in one or more of the magnetoresistance elements using at least one of the outputs signals of the first and second comparators.

Abstract: A method and apparatus for inspecting a sample is provided. The apparatus includes a sample holder for holding the sample at a sample plane, a charged particle column for generating an array of multiple charged particle beamlets and directing the array towards the sample holder, a position sensor, and a control unit. The charged particle column includes an objective lens for focusing the charged particle beamlets of the array in an array of charged particle beam spots at or near the sample plane. The objective lens includes a magnetic lens common for all charged particle beamlets. The position sensor provides a signal which is dependent on the position of the sample. The control unit controls the position of the sample holder on the basis of the signal from the position sensor, to keep the pitch and/or orientation of the spots on the sample constant.

Abstract: A modeling method of shape-approximating a shape measurement target provided in a structure having a stack structure by a boundary line, and a standard deviation is provided as a tolerance for a measurement value of the shape measurement target, and a calculation boundary line is arranged to converge within the tolerance, and thereby, a shape of the shape measurement target is expressed.

Abstract: The present document relates to a probe chip for use in a scanning probe microscopy device for holding a probe mounted thereon. The probe chip includes a carrier element having a probe bearing side which is configured for bearing the probe to be extending therefrom as an integral or mounted part thereof. The carrier element further comprises a mounting side configured for mounting the probe chip onto a scan head of the scanning probe microscopy device, wherein the mounting side extends in a longitudinal and lateral direction of the carrier element to be substantially flat.

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

Abstract: A method for operating a multi-beam particle beam microscope includes: scanning a multiplicity of particle beams over an object; directing electron beams emanating from impingement locations of the particle beams at the object onto an electron converter; detecting first signals generated by impinging electrons in the electron converter via a plurality of detection elements of a first detection system during a first time period; detecting second signals generated by impinging electrons in the electron converter via a plurality of detection elements of a second detection system during a second time period; and assigning to the impingement locations the signals which were detected via the detection elements of the first detection system during the first time period, for example on the basis of the detection signals which were detected via the detection elements of the second detection system during the second time period.

Abstract: In a semiconductor manufacturing method includes providing a plurality of patterns on a semiconductor substrate. The patterns include an NMOS structure arranged next to an N+/N well structure, and/or a PMOS structure arranged next to a P+/P well structure. The method further includes: receiving a plurality of images by applying an electron beam to the patterns; and transferring the semiconductor substrate to a next process step if there is no image conversion according to a predetermined image contrast property of the patterns.

Abstract: A method for detecting defects in multi-scale images and a computing device applying the method acquires a to-be-detected image and converts the to-be-detected image into a plurality of target images of preset sizes. Feature extraction is performed on each target image by using a pre-trained encoder to obtain a latent vector, the latent vector of each target image is inputted into a decoder corresponding to the encoder to obtain a reconstructed image and then into a pre-trained Gaussian mixture model to obtain an estimated probability. Reconstruction error is calculated according to each target image and the corresponding reconstructed image. A total error is calculated according to the reconstruction error of each target image and the corresponding estimated probability, and a detection result is determined according to the total error of each target image and a corresponding preset threshold, thereby improving an accuracy of defect detection.

Abstract: An electron-beam irradiation apparatus includes: a power source device; an accelerating tube that accelerates electrons when power is supplied from the power source device, to generate an electron beam; and a pressure tank that contains the power source device and the accelerating tube. The pressure tank is configured so as to be dividable into a first division body that contains the power source device and a second division body that contains the accelerating tube. The second division body has an outlet for emitting the electron beam emitted from the accelerating tube, to the outside of the pressure tank. In addition, the power source device has a connecting part connected to the second division body.

Abstract: In one aspect, a method of modulating transmission of ions in a mass spectrometer is disclosed, which comprises generating an ion beam comprising a plurality of ions, directing the ion beam to an ion optic positioned in the path of the ion beam, wherein the ion optic includes at least one opening through which the ions can pass, and applying one or more voltage pulses at a selected duty cycle to said ion optic so as to obtain a desired attenuation of brightness of the ion beam passing through the ion optic, where a pulse width of said voltage pulses at said selected duty cycle is determined by identifying a pulse width on a calibration normalized ion intensity versus pulse width relation for said ions that corresponds to said desired attenuation on an ideal normalized ion intensity versus pulse width relation for said ions.

Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

Abstract: An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Abstract: A ponderomotive phase plate, also called a laser phase plate or standing wave optical phase plate, has a first minor and a second minor that define an optical cavity. An electron beam passes through a focal spot of the optical cavity. A laser with variable polarization angle of laser light is coupled to the optical cavity. A standing wave of polarized laser light, with an anti-node at the focal spot of the optical cavity, causes variable modulation of the electron beam. The variable modulation of the electron beam is controllable by the variable polarization angle of the laser light. In a transmission electron microscope, an image plane receives the electron beam modulated by the standing wave optical phase plate. An image formed at the image plane is based on the variable polarization angle of the polarized laser light.

Abstract: An electron-beam irradiation apparatus includes: a power source device; an accelerating tube that accelerates electrons when power is supplied from the power source device, to generate an electron beam; and a pressure tank that contains the power source device and the accelerating tube. The pressure tank is configured so as to be dividable into a first division body that contains the power source device and a second division body that contains the accelerating tube. The second division body has an outlet for emitting the electron beam emitted from the accelerating tube, to the outside of the pressure tank. In addition, the power source device has a connecting part connected to the second division body.

Abstract: The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample; scanning said charged particle beam over said sample at a plurality of sample locations; and detecting, using a first detector, emissions of a first type from the sample in response to the beam scanned over the plurality of sample locations. Spectral information of detected emissions of the first type is used to assign a plurality of mutually different phases to said sample at said plurality of sample locations. Information relating to at least one previously assigned phase and its respective sample location is used for establishing an estimated phase for at least one other of the plurality of sample locations. Said estimated phase is assigned to said other sample location. A control unit is used to provide a data representation of said sample containing at least information on said plurality of sample locations and said phases.

Abstract: A microelectromechanical (MEMS) device is provided. The MEMS device comprises a substrate and a movable structure flexurally connected to the substrate, capable of moving in relation to the substrate, wherein the movable structure further comprising two or more segments having at least one mechanical connection between said segments to provide structural integrity of the moving structure; and wherein the at least one mechanical connection electrically isolates at least two segments.

Abstract: An epoxy resin-based embedding media doped with a non-conductive dopant to a predetermined w/w % such that the media is non-charging at 1.8 keV. A preferred dopant is polyethylene glycol at a molecular weight of at least 3350, and having a predetermined w/w % is at least 2% and up to 20%, most preferably from 2% to 10%. Another preferred dopant is polyethylene glycol at a molecular weight of 7000-8000 and a predetermined w/w % of up to ˜40% and more preferably of up to ˜30%.

Abstract: An additive manufacturing machine may include a beam source, a process chamber, a beam column operably coupled to the process chamber and/or defining a portion of the process chamber, and a gaseous ionization detector disposed about the beam column. The gaseous ionization detector may be configured to detect elementary particles corresponding to an ionizing gas ionized by an energy beam from the beam source. A method of additively manufacturing a three-dimensional object may include determining data from a gaseous ionization detector disposed about a beam column of an additive manufacturing machine, and additively manufacturing a three-dimensional object using the additive manufacturing machine based at least in part on the data from the gaseous ionization detector.

Abstract: Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

Abstract: There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.

Abstract: A method for demodulation including the following steps: exciting a vibrationally mounted, at least sectionally bar-shaped oscillating element for oscillating in the range of a resonance frequency of the oscillating element, wherein a temporally varying, in particular periodic, excitation signal is used for excitation, and wherein at least the temporal variation of the excitation signal is known or determined; detecting a modulated oscillation of the oscillating element by means of at least one sensor, wherein the sensor supplies a sensor measurement variable that varies versus time as a function of an amplitude and a phase of the modulated oscillation of the oscillating element. According to the present teaching, it is provided that the method includes the following step: generate a first comparison signal by amplitude modulating a known temporally varying, in particular periodic, demodulation signal by means of the temporally varying sensor measurement variable.

Abstract: A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

Abstract: A method prepares a microsample from a volume sample using multiple particle beams. The method includes providing a volume sample in the microscope system, wherein the interior of the volume sample has a sample region of interest, and producing a macrolamella comprising the sample region of interest by removing sample material of the volume sample using one of the particle beams. The method also includes orienting the macrolamella relative to one of the particle beams, and removing sample material of the macrolamella via a beam so that the region of interest is exposed.

Abstract: With respect to a charged particle beam apparatus, provided is a technology capable of preventing a deterioration in image quality of a captured image. The charged particle beam apparatus includes an imaging device that irradiates a sample with a charged particle beam and forms an image from information of the sample and a computer. The computer stores each of images (scanned images) obtained by scanning the same area multiple times, classifies each of images into an image including a deteriorated image and an image not including the deteriorated image, and stores a target image obtained by performing image integration from the image not including the deteriorated image. The charged particle beam apparatus includes a database that stores data such as information obtained from an imaging device including the scanned image, classification results, and the target image.

Abstract: Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

Abstract: A charged particle beam device includes a detector 109 converting a photon emitted by a scintillator into an electric signal and a signal processing unit 110 processing the electric signal from the detector 109. The signal processing unit 110 detects a peak position of the electric signal, steepness of a rising section associated with the peak position, and steepness of a falling section associated with the peak position and classifies the peak position based on the steepness of the rising section and the steepness of the falling section.

Abstract: The present disclosure proposes a diagnostic system capable of properly identifying the cause of even an error for which multiple factors or multiple compound factors may be accountable. The diagnostic system according to the present disclosure is provided with a learning device for learning at least one of a recipe defining operations of an inspection device, log data describing states of the device, or specimen data describing characteristics of a specimen in association with error types of the device, and estimates the cause of the error by using the learning device (refer to FIG. 4).

Abstract: The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.

Abstract: Computer-implemented methods for controlling a charged particle microscopy system include estimating a drift of a stage of the charged particle microscopy system based on an image sequence, and automatically adjusting a stage settling wait duration based on the drift estimate. Charged particle microscopy systems include an imaging system, a movement stage, and a processor and memory configured with computer-executable instructions that, when executed, cause the processor to estimate a stage settling duration of the movement stage based on an image sequence obtained with the imaging system, and automatically adjust a stage settling wait duration for the movement stage based on the stage settling duration.

Abstract: Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance.

Abstract: A sensor probe assembly includes a probe, and a sensor assembly coupled to the probe. The sensor assembly measures a physical or electrical characteristic of a surface that the probe is near to or in contact with. The sensor assembly is symmetrically disposed around a center axis of the probe.

Abstract: An aberration value estimator has a learned estimation model for estimating an aberration value set based on a Ronchigram. In a machine learning sub-system, a simulation is repeatedly executed while changing a simulation condition, and calculated Ronchigrams are generated in a wide variety and in a large number. By machine learning using the calculated Ronchigrams, the learned estimation model is generated.

Abstract: A method for setting position of a component of a particle beam apparatus may be performed, for example, by the particle beam apparatus. The component may be embodied as a gas feed device, as a particle detector and/or as a beam detector. The method may include: aligning the component with a coincidence point of a particle beam of the particle beam apparatus, determining a rotation angle of a rotation of an object carrier about a rotation axis, loading a position of the component associated with the rotation angle from a database into a control unit, transmitting a control signal from the control unit to a drive unit for moving the component, and moving the component into the position loaded from the database by means of the drive unit, wherein the component arranged in the loaded position is at a pre-definable distance from the object.

Abstract: There is provided a quantitative method for determining a level of a sanding surface preparation of a carbon fiber composite surface, prior to the carbon fiber composite surface undergoing a post-processing operation.

Abstract: A charged particle beam apparatus includes a beamlet forming unit configured to form and scan an array of beamlets on a sample. A first portion of the array of beamlets is focused onto a focus plane, and a second portion of the array of beamlets has at least one beamlet with a defocusing level with respect to the focus plane. The charged particle beam apparatus also includes a detector configured to detect an image of the sample formed by the array of beamlets, and a processor configured to estimate a level of separation between the focus plane and the sample based on the detected image and then reduce the level of separation based on the estimated level.

Abstract: In a method of producing a test-sample for a transmission electron microscope, it is so arranged that a massive body in a rectangular parallelepiped shape including a multiple quantum well active layer is cut out from a laser diode being a workpiece; thereafter, a test-sample is produced in which tilting oblique cutoff portions are formed at corner portions contiguously bordering on an upper surface of the massive body, so that surface-part active layers can be visually identified thereat; and thereafter, the test-sample is made thinner, and also an observation test-sample is cut out therefrom by taking on, as references, two surface-part active layers visually identifiable at the tilting oblique cutoff portions.

Abstract: There is provided a method for determining a quality of an abrasive surface preparation of a composite surface, prior to the composite surface undergoing a post-processing operation. The method includes fabricating a plurality of levels of abrasive surface preparation standards for a reference composite surface; using one or more surface analysis tools to create target values for quantifying each of the levels; and measuring, with the surface analysis tools, one or more abrasive surface preparation locations on the composite surface of a test composite structure, to obtain one or more test result measurements. The method further includes comparing each of the one or more test result measurements to the levels, to obtain one or more test result levels; determining if the one or more test result levels meet the one or more target values; and determining whether the composite surface is acceptable to proceed with the post-processing operation.

Abstract: There is provided an ultrafast electron diffraction apparatus including: a photoelectron gun configured to emit an electron beam; a bending portion for emitting the electron beam emitted from the photoelectron gun by changing a travel direction of the electron beam by a predetermined angle; and a sample portion including a sample to be analyzed by the electron beam emitted from the bending portion. The electron beam reaches the sample portion in a state that a pulse of the electron beam is compressed and the timing jitter between the pumping light and probe electron pulse is completely reduced as the travel direction of the electron beam is changed by the predetermined angle through the bending portion.

Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.

Abstract: A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

Abstract: An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.

Abstract: Methods and systems for milling and imaging a sample based on multiple fiducials at different sample depths include forming a first fiducial on a first sample surface at a first sample depth; milling at least a portion of the sample surface to expose a second sample surface at a second sample depth; forming a second fiducial on the second sample surface; and milling at least a portion of the second sample surface to expose a third sample surface including a region of interest (ROI) at a third sample depth. The location of the ROI at the third sample depth relative to the first fiducial may be calculated based on an image of the ROI and the second fiducial as well as relative position between the first fiducial and the second fiducial.

Abstract: Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

Abstract: The invention relates to system and method of inspecting a specimen with a plurality of charged particle beamlets. The method comprises the steps of providing a specimen, providing a plurality of charged particle beamlets and focusing said plurality of charged particle beamlets onto said specimen, and detecting a flux of radiation emanating from the specimen in response to said irradiation by said plurality of charged particle beamlets.

Abstract: When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.

Abstract: According to one embodiment, an electron beam device includes a support which supports the sample and an electrode disposed below the sample on the support The electrode is for applying a voltage to the sample and includes a plurality of columnar electrodes that can be independently controlled to apply different voltages to portions of the sample. A controller for generating correction data for correcting the distribution of an electric field generated across the area of the sample. The correction data is generated based on structure information indicating a structure of the sample. The controller controls the plurality of columnar electrodes to apply local voltages set based on the correction data.

Abstract: A robotic object handling system comprises a robot arm, a non-contact sensor, a first station, and a computing device. The computing device is to cause the robot arm to pick up an object on an end effector, cause the robot arm to position the object within a detection area of the non-contact sensor, cause the non-contact sensor to generate sensor data of the object, determine at least one of a rotational error of the object relative to a target orientation or a positional error of the object relative to a target position based on the sensor data, cause an adjustment to the robot arm to approximately remove at least one of the rotational error or the positional error from the object, and cause the robot arm to place the object at the first station, wherein the placed object lacks at least one of the rotational error or the positional error.

Abstract: The disclosed technology brings histopathology into the operating theatre, to enable real-time intra-operative digital pathology. The disclosed technology utilizes confocal imaging devices image, in the operating theatre, “optical slices” of fresh tissue—without the need to physically slice and otherwise process the resected tissue as required by frozen section analysis (FSA). The disclosed technology, in certain embodiments, includes a simple, operating-table-side digital histology scanner, with the capability of rapidly scanning all outer margins of a tissue sample (e.g., resection lump, removed tissue mass). Using point-scanning microscopy technology, the disclosed technology, in certain embodiments, precisely scans a thin “optical section” of the resected tissue, and sends the digital image to a pathologist rather than the real tissue, thereby providing the pathologist with the opportunity to analyze the tissue intra-operatively.