Abstract: Apparatuses and methods for comparative holographic imaging to improve structural and molecular information of reconstructions is disclosed herein. An example method at least includes acquiring a plurality of holograms of a sample, wherein each hologram of the plurality of holograms is acquired at a different electron beam energy, and determining atomic and structural information of the sample based at least on a comparison of at least two of the holograms of the plurality of holograms.

Abstract: Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

Abstract: An electron beam system and method are provided. The system includes a detector having a detector face configured to detect back-scattered electrons reflected off of a sample. The system further includes an annular cap disposed on the detector face, and a protective pellicle disposed on the annular cap, covering the detector face. The protective pellicle is transparent to back-scattered electrons and provides a physical barrier to particles directed at the detector face.

Abstract: Methods for inserting dummy boundary cells in an integrated circuit (IC) are provided. A plurality of macros and a top channel are merged into floorplan of the IC. The top channel is arranged between the macros and is filled with a plurality of first dummy boundary cells, and each of the macros includes a macro boundary and a main pattern surrounded by the macro boundary. The first dummy boundary cells within the top channel and between a first macro and a second macro are replaced with a plurality of second dummy boundary cells. The macro boundaries of the first and second macros are formed by the second dummy boundary cells. First gate length of dummy patterns within the first dummy boundary cells is greater than second gate length of dummy patterns within the second dummy boundary cells. The first and second dummy boundary cells are the same size.

Abstract: A visualized data generation device includes an acquisitor, an analyzer, and a generator. The acquisitor acquires manufacturing data including one or more pieces of first data Yi regarding a product state with respect to one product. The analyzer analyzes the first data Yi acquired by the acquisitor and derives a first index value with respect to each piece of the first data Yi. The generator generates visualized data including a first analysis result display region for causing a display device to display information about the first index value. The generator generates the visualized data in which an amount of information and a priority is set for each first analysis result display region on the basis of the first index value and a display form of the first analysis result display region is set on the basis of the amount of information and the priority.

Abstract: Provided is a technology for evaluating a property of a pattern formed inside a sample from two-dimensional information of the sample. A pattern evaluation system of the present disclosure includes a computer subsystem that executes a process of evaluating a property of a pattern by reading a program from a memory that stores the program for evaluating the property of the pattern formed inside a sample. The computer subsystem executes a process of acquiring an image of the sample; a process of extracting a signal waveform from the image; a process of calculating a feature amount in a predetermined region of the signal waveform; a process of comparing the feature amount with a reference value of the feature amount; and a process of evaluating the property of the pattern based upon a comparison result in the comparison process.

Abstract: The present invention relates to an autofocus technique for a scanning electron microscope using interlaced scan. The autofocus method for a scanning electron microscope, includes: generating a thinned image of a pattern (160) formed on a surface of a specimen by repeatedly scanning the specimen with an electron beam while shifting a scanning position of the electron beam by predetermined plural pixels in a direction perpendicular to a scanning direction; performing said generating a thinned image of the pattern (160) plural times, while changing a focal position and an irradiation position of the electron beam, to generate thinned images of the pattern (160); calculating a plurality of sharpness levels of the respective thinned images; and determining an optimum focal position based on the sharpness levels.

Abstract: An object of the present invention is to provide a charged particle beam device capable of easily and quickly calling a function required by a user on a GUI. A charged particle beam device according to the invention presents an operation component that is recommended to be provided on a component set according to an operation history of the charged particle beam device (see FIG. 5).

Abstract: A novel method for cross-section sample preparation has a sample oriented normal to an SEM/GFIS or other imaging column via a stage, and is operated upon by an FIB to form the cross-section pre-lamella within the sample, followed by an approximate 90° rotation with no tilt of the stage for cut out by the FIB. Asymmetric trenches are milled to have a three-dimensional depth profile to ensure that the FIB has clear line of sight to a face of the resulting pre-lamella when the sample has been rotated. The three-dimensional depth profile further minimizes overall milling time required for the preparation of the pre-lamella.

Abstract: The present application relates to a method and an apparatus for determining a wavefront of a massive particle beam, including the steps of: (a) recording two or more images of a reference structure using the massive particle beam under different recording conditions; (b) generating point spread functions for the two or more recorded images with a modified reference image of the reference structure; and (c) performing a phase reconstruction of the massive particle beam on the basis of the generated point spread functions and the different recording conditions, for the purposes of determining the wavefront.

Abstract: A particle beam apparatus and/or a light microscope is operated. A first temperature of an object may be changed, where the object may be arranged on an object receiving device rendered movable by a motor operated by a supply current. Changing the first temperature of the object may alter a second temperature of the object-receiving device from a first temperature value to a second temperature value. The supply current of the motor may be changed from a first current value to a second current value, where the supply current is designed to hold the object-receiving device in position, and a temperature of the object-receiving device may be changed from the second temperature value to a third temperature value on account of heat generated by the motor, which may be obtained by the second current value of the supply current and fed to the object receiving device.

Abstract: Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Abstract: The particle beam irradiation apparatus includes: an irradiation unit configured to radiate a particle beam; a first detection unit configured to detect first particles; a second detection unit configured to detect second particles; an image forming unit configured to form an observation image based on a first signal obtained by the detection of the first particles, which is performed by the first detection unit, and to form an observation image based on a second signal obtained by the detection of the second particles, which is performed by the second detection unit; and a control unit configured to calculate a brightness of a first region in the formed first observation image and perform a brightness adjustment of the first detection unit based on a first target brightness as a first brightness adjustment when the brightness of the first region is different from the first target brightness.

Abstract: The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over at least part of said sample. A first detector is used for obtaining measured detector signals corresponding to emissions of a first type from the sample at a plurality of sample positions. According to the method, a set of data class elements is provided, wherein each data class element relates an expected detector signal to a corresponding sample information value. The measured detector signals are processed, and processing comprises comparing said measured detector signals to said set of data class elements; determining at least one probability that said measured detector signals belong to a certain one of said set of data class elements; and assigning at least one sample information value and said at least one probability to each of the plurality of sample positions.

Abstract: Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Abstract: A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented.

Abstract: A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.

Abstract: A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

Abstract: A device for measuring a secondary electron emission coefficient comprises a scanning electron microscope, a first collecting plate, a second collecting plate, a first galvanometer, a second galvanometer, a voltmeter, and a Faraday cup. The scanning electron microscope comprises an electron emitter and a chamber. A sample is located between the first collecting plate and the second collecting plate. The first galvanometer is used to test a current intensity of electrons escaping from the sample and hitting the first collecting plate and the second collecting plate. A high-energy electron beam emitted by the electron emitter passes through the first collecting plate and the second collecting plate, and enters the Faraday cup. The second galvanometer is used to test a current intensity of electrons entering the Faraday cup.

Abstract: A detector for Kikuchi diffraction comprising a detector body and a detector head mountable to each other. The detector body comprises a body part which is enclosing a photodetector configured for detecting incident radiation and further comprises a vacuum window arranged upstream the photodetector with respect to a propagation direction of the incident radiation, a first body mounting portion configured to be mounted to a SEM chamber port and a second body mounting portion. The detector head comprises a scintillation screen and a head mounting portion configured to be mounted to the second body mounting portion.

Abstract: A system for capturing, organizing, and storing handwritten notes includes a plurality of fluorescently colored boundary markers. The boundary markers are configured to be positioned on a writing surface. An image of the writing surface with the fluorescent markers thereon is captured and the fluorescent colored boundary markers in the captured image are detected. A virtual boundary in the captured image is identified based on the positions of the fluorescent colored boundary markers. A portion of the captured image within the virtual boundary is unwarped to produce an unwarped image.

Abstract: The present invention provides an apparatus of charged-particle beam such as an electron microscope with co-condensers. A source of charged particles is configured to emit a beam of charged particles, and the co-condensers including two or more magnetic condensers are configured to coherently focus the beam to a single crossover spot. The invention exhibits numerous technical merits such as continuous image resolution tuning, and automatic switching between multiple resolutions, among others.

Abstract: A method for measuring secondary electron emission coefficient comprising: providing a device including a first collecting plate and a second collecting plate, and measuring an injection current. Short-circuiting the first collecting plate and the second collecting plate; placing a sample and applying a 50 volt positive voltage between the sample and the first collecting plate, ISE is 0; measuring a current I1 between the sample and the first collecting plate, and ignoring IBG1; and according to formula I1=IBG1+Iothers+ISE, obtaining a current of other electrons. Applying a positive voltage between the first collecting plate and the sample; measuring a current I2 between the first collecting plate and the sample, and ignoring IBG2; and obtaining ISE formed by the secondary electrons according to formula I2=IBG2+Iothers+ISE. Obtaining the secondary electron emission coefficient according to formula ? = I SE I injection ? ? current .

Abstract: The purpose of the present invention is to provide a charged-particle beam apparatus capable of performing various types of signal discriminations according to the shape and the size of a sample. The present invention proposes a charged-particle beam apparatus for irradiating a sample disposed in a vacuum vessel with a charged particle beam. The charged-particle beam apparatus is provided with: a first light-generating surface for generating light on the basis of the collision of charged particles released from the sample; a light-guiding member for guiding the generated light to the outside of the vacuum vessel while maintaining the generation distribution of the light generated at the first light-generating surface; a photodetector for detecting the light guided by the light-guiding member to the outside of the vacuum vessel; and a light-transmission restricting member for restricting transmission of the light guided by the light-guiding member between the photodetector and the light-guiding member.

Abstract: To provide, in observation of a sample that requires a movement between various devices, a charged particle beam device, a method for processing the sample, and an observation method which facilitate the movement between the devices. The charged particle beam device that processes an observation target on the sample using a charged particle beam includes: a sample stage on which the sample is placed; an observation unit configured to observe the observation target; and a writing unit configured to write information of the observation target in a writing position of the sample.

Abstract: An electron beam inspection apparatus includes a plurality of electrodes to surround an inspection substrate placed on a stage, a camera to measure, for each of the plurality of electrodes, a gap between a peripheral edge of the inspection substrate and an electrode of the plurality of electrodes, a retarding potential application circuit to apply a retarding potential to the inspection substrate, an electrode potential application circuit to apply, to each electrode, a corresponding potential of potentials each obtained by adding an offset potential, which is variable according to a measured gap, to the retarding potential to be applied to the inspection substrate, and an electron optical system to irradiate the inspection substrate with electron beams, in the state where the retarding potential has been applied to the inspection substrate and the corresponding potential of the potentials has been individually applied to each of the plurality of electrodes.

Abstract: The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focusing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points xD, yD and mapping each of the detected image points xD, yD to an image point of an improved TKD pattern (20a) with the coordinates x0, y0 by using and inverting generalized terms of the form xD=?*A+(1??)*B and yD=?*C+(1??)*D wherein ? = Z D with Z being an extension in the z-direction of a cylindrically symmetric magnetic field BZ of the electron lens (61), and wherein A, B, C, D are trigonometric expressions depending on the coordinates x0, y0, with B and D defining a rotation around a symmetry axis of the magnetic field BZ, and with A and C d

Abstract: An electron microscope includes: a laser light source configured to generate a CW laser; an irradiation lens system configured to irradiate a measurement sample with the CW laser; an energy analyzer configured to disperse, depending on energy, photoelectrons emitted from the measurement sample by irradiation with the CW laser; an energy slit configured to allow a photoelectron with a specified energy to pass, among the photoelectrons; an electron beam detector configured to detect the photoelectron passed through the energy slit; a first electron lens system configured to focus the photoelectrons emitted from the measurement sample onto the energy analyzer; and a second electron lens system configured to project the photoelectron passed through the energy slit onto the electron beam detector.

Abstract: A method and system for controlling neural activity in the brain, including performing a source localization procedure and a neurostimulation procedure, and using the former as a monitor to provide for feedback control of the latter.

Abstract: The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points.

Abstract: A scanning electron microscope having a spectrometer with a sensor having a plurality of pixels, wherein the spectrometer directs different wavelengths of collected light onto different pixels. An optical model is formed and an error function is minimized to find values for the model, such that wavelength detection may be corrected using the model. The model can correct for errors generated by effects such as the motion of the electron beam over the specimen, aberrations introduced by optical elements, and imperfections of the optical elements. A correction function may also be employed to account for effects not captured by the optical model.

Abstract: Systems and methods are provided for determining defects in a semiconductor structure sample that is prepared for analysis by microscopy. A semiconductor structure sample preparation and analysis system includes a semiconductor structure sample that includes a structure, a protective capping layer on the structure, and a gap filler material on the protective capping layer. A microscopy apparatus acquires an image of the semiconductor structure sample. Sample defect recognition circuitry determines the presence of a defect in the semiconductor structure sample based on the acquired image.

Abstract: Automatic alignment of the zone axis of a sample and a charged particle beam is achieved based on a diffraction pattern of the sample. An area corresponding to the Laue circle is segmented using a trained network. The sample is aligned with the charged particle beam by tilting the sample with a zone axis tilt determined based on the segmented area.

Abstract: A method of evaluating a region of a sample that includes a first sub-region and a second sub-region, adjacent to the first sub-region, the region comprising a plurality of sets of vertically-stacked double-layers extending through both the first and second sub-regions with a geometry or orientation of the vertically-stacked double layers in the first sub-region being different than a geometry or orientation of the vertically-stacked double layers in the second region resulting in the first sub-region having a first milling rate and the second sub-region having a second milling rate different than the first milling rate, the method including: milling the region of a sample by scanning a focused ion beam over the region a plurality of iterations in which, for each iteration, the focused ion beam is scanned over the first sub-region and the second sub-region generating secondary electrons and secondary ions from each of the first and second sub-regions; detecting, during the milling, at least one of the generat

Abstract: The present invention proposes a pattern measurement tool characterized by being provided with: a charged-particle beam sub-system having a tilt deflector; and a computer sub-system which is connected to the charged-particle beam sub-system and which is for executing measurement of a pattern on the basis of a signal obtained by said charged-particle beam sub-system, wherein the charged-particle beam sub-system acquires at least two signal profiles by scanning beams having at least two incidence angles, the computer sub-system measures the dimension between one end and the other end of the pattern on the basis of the at least two signal profiles, calculates the difference between the two measurements, and calculates the height of the pattern by inputting the difference value determined by said calculation into a relational formula indicating the relation between the height of the pattern and said difference value.

Abstract: Methods and systems for training a machine learning model using synthetic defect images are provided. One system includes one or more components executed by one or more computer subsystems. The one or more components include a graphical user interface (GUI) configured for displaying one or more images for a specimen and image editing tools to a user and for receiving input from the user that includes one or more alterations to at least one of the images using one or more of the image editing tools. The component(s) also include an image processing module configured for applying the alteration(s) to the at least one image thereby generating at least one modified image and storing the at least one modified image in a training set. The computer subsystem(s) are configured for training a machine learning model with the training set in which the at least one modified image is stored.

Abstract: In one embodiment, a multi-beam writing method includes acquiring a plurality of pieces of position deviation data corresponding to a plurality of parameter values of a parameter that change position deviation amount of each beam of multi-beam irradiated on a substrate, calculating a plurality of pieces of reference coefficient data corresponding to each of the plurality of pieces of position deviation data, calculating coefficient data corresponding to a parameter value at an irradiation position of the multi-beam on the substrate using the plurality of pieces of reference coefficient data corresponding to the plurality of parameter values, modulating an irradiation amount of each beam of the multi-beam for each shot using the coefficient data, and writing a pattern by irradiating the substrate with each beam of at least a part of the multi-beam having the modulated irradiation amounts.

Abstract: Disclosed herein is a method comprising: depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rate of deposition during the first time period and an average rate of deposition during the second time period are different.

Abstract: A multi-beam particle microscope includes a multi-beam particle source, an objective lens, a detector arrangement, and a multi-aperture plate with a multiplicity of openings. The multi-aperture plate is between the objective lens and the object plane. The multi-aperture plate includes a multiplicity of converters which convert backscattered electrons which are generated by primary particle beams at an object into electrons with a lower energy, which provide electrons that form electron beams detected by the detector arrangement.

Abstract: Disclosed herein are systems and methods for pulsing electron beams and synchronizing the pulsed electron beam with scanning a sample at a plurality of scan locations. An example method at least includes pulsing an electron beam to form a pulsed electron beam having a pulse period, moving the pulsed electron beam to interact with a sample at a plurality of locations, the interaction at each of the plurality of locations occurring for a dwell time, and synchronizing data acquisition of the interaction of the pulsed electron beam with the sample based on the pulsing and the translating of the electron beam, wherein the dwell time is based on a derivative of the pulse period.

Abstract: Methods and systems for implementing laser-based phase plate image contrast enhancement are disclosed herein. An example method at least includes forming at least one optical peak in a diffraction plane of an electron microscope, and directing an electron beam through the at least one optical peak at a first location, where the first location determines an amount of phase manipulation the optical peak imparts to an electron of the electron beam.

Abstract: A secondary charged particle imaging system comprising: a backscattered electron detector module, wherein the backscattered electron detector module is rotatable between a first angular position and a second angular position about an axis.

Abstract: A scanning probe microscope includes a case, an actuator, at least one elastic body, and a probe. The actuator includes a piezoelectric scanner having a cylindrical shape and a sample holder. The piezoelectric scanner is disposed inside the case to be coaxial with the case such that the first end is fixed to the bottom portion. The sample holder is provided at a second end of the piezoelectric scanner. At least one elastic body is disposed so as to be sandwiched between the case and at least one of the piezoelectric scanner and the sample holder.

Abstract: The backside of a planar view lamella is prepared from a sample extracted from a workpiece. The sample includes multiple device layers and a substrate layer. After removing at least a part of the substrate layer covering a final device layer to obtain a sample surface, a region of interest (ROI) relative to the sample surface is alternately scanned with an electron beam and spontaneously etched until the final device layer within the ROI is exposed. One or more device layers may be removed from the sample backside after the final device layer is exposed to obtain the backside of the planar view lamella.

Abstract: Aspects and embodiments relate to electron microscopy sample preparation apparatus; and a method of preparing an electron microscopy sample. Aspects and embodiments provide electron microscopy sample preparation apparatus. The apparatus comprises a support holder configured to receive an electron microscopy sample support, the electron microscopy sample support configured to receive a fluid sample. The apparatus comprising a gas outlet configured to direct a flow of gas towards a surface of the electron microscopy sample support to adjust fluid supported by the electron microscopy sample support. Aspects and embodiments recognise that in order to be successfully imaged, a specimen must be adequately prepared for imaging. Successful and reproducible preparation of an electron microscopy sample or specimen may be key to obtaining useful results from microscopy techniques.

Abstract: A semiconductor measurement device includes an electrode provided in a semiconductor sample, and a probe contactable with the semiconductor sample. A driver moves a contact position of the probe with respect to the semiconductor sample. A power supply applies electric power between the probe and the electrode. A measurement operation portion measures a current flowing via the semiconductor sample between the probe and the electrode as a voltage applied between the probe and the electrode is changed, the measurement operation portion measuring the current flowing for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points. A display displays a relationship between the voltage and the current measured at each of the measurement points.

Abstract: In a method for automated determination of the relative position (x/y/z) between a first hole (27) on a first microsystem component (11), which is preferably provided with a first channel (44) opening in the first hole (27), and at least one second hole (29) on a second microsystem component (12), which is preferably provided with a second channel (45) opening in the second hole (29), the two microsystem components (11, 12) lie in a liquid medium (41) at least in the region (25, 26) of the holes (27, 29). Under the supervision of a control device (15) controlled by a computer (22), the first and second microsystem components (11, 12) are displaced relative to one another into different relative positions (x/y/z). Electrical signals (37) are delivered to one of the two microsystem components (12, 12) and are recorded on the other of the two microsystem components (11, 12) as measurement values (38) which depend on the relative position of the two microsystem components (11, 12) with respect to one another.

Abstract: A sample analyzer includes a voltage source that applies a voltage to a sample. A laser irradiator irradiates the sample with a laser beam. A detector detects a particle emitted from the sample. An operation device specifies the material of the particle detected by the detection device, by mass spectrometry of the particle and analyzes the structure of the sample. The operation device calculates a ratio in structure between model information indicating the structure of the sample, which is prepared in advance, and analysis information indicating the structure of the sample, which is obtained by the mass spectrometry, and applies the ratio to the analysis information so as to correct the analysis information.

Abstract: X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

Abstract: A method includes introducing a fluidic sample into a void volume of a porous material, bringing the porous material into contact with a hydrophilic substrate compatible with a cryogenic Transmission Electron Microscope, separating the porous material from the substrate, and transferring a portion of the sample from the porous material to the substrate between their contact and separation.