Positive Ion Probe Or Microscope Type Patents (Class 250/309)
  • Patent number: 10991545
    Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: April 27, 2021
    Assignee: NexGen Semi Holding, Inc.
    Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
  • Patent number: 10986279
    Abstract: Control system configured for sample tracking in an electron microscope environment registers a movement associated with a region of interest located within an active area of a sample under observation with an electron microscope. The registered movement includes at least one directional constituent. The region of interest is positioned within a field of view of the electron microscope. The control system directs an adjustment of the electron microscope control component to one or more of dynamically center and dynamically focus the view through the electron microscope of the region of interest. The adjustment comprises one or more of a magnitude element and a direction element.
    Type: Grant
    Filed: November 18, 2020
    Date of Patent: April 20, 2021
    Assignee: Protochips, Inc.
    Inventors: Franklin Stampley Walden, II, John Damiano, Jr., David P. Nackashi, Daniel Stephen Gardiner, Mark Uebel, Alan Philip Franks, Benjamin Jacobs
  • Patent number: 10811223
    Abstract: Producing and storing a first image, of a first, initial surface of the specimen; In a primary modification step, modifying said first surface, thereby yielding a second, modified surface; Producing and storing a second image, of said second surface; Using a mathematical Image Similarity Metric to perform pixel-wise comparison of said second and first images, so as to generate a primary figure of merit for said primary modification step.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: October 20, 2020
    Assignee: FEI Company
    Inventors: Pavel Potocek, Faysal Boughorbel, Mathijs Petrus Wilhelmus van den Boogaard, Emine Korkmaz
  • Patent number: 10641815
    Abstract: A secure distance protection for electric power delivery systems under transient conditions is disclosed herein. Upon detection of a transient condition, additional security is added to a distance protection element before a protective action is taken. The transient condition may be detected when an angle of advancement of an operating signal is outside of a predetermined threshold. An unsecure condition may also be detected before applying additional security. The unsecure condition may be detected based on an estimation of a fault within a close-in zone and a voltage magnitude falling below a threshold.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: May 5, 2020
    Assignee: Schweitzer Engineering Laboratories, Inc.
    Inventors: Bogdan Z. Kasztenny, Chadburn Troy Daniels
  • Patent number: 10636623
    Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: April 28, 2020
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hiroyasu Shichi, Shinichi Matsubara, Yoshimi Kawanami, Hiroyuki Muto
  • Patent number: 10527645
    Abstract: A probe for atomic force microscopy comprises a tip for atomic force microscopy oriented in a direction referred to as the longitudinal direction and protrudes from an edge of a substrate in the longitudinal direction, wherein the tip is arranged at one end of a shuttle attached to the substrate at least via a first and via a second structure, which structures are referred to as support structures, at least the first support structure being a flexible structure, extending in a direction referred to as the transverse direction, perpendicular to the longitudinal direction and anchored to the substrate by at least one mechanical linkage in the transverse direction, the support structures being suitable for allowing the shuttle to be displaced in the longitudinal direction. An atomic force microscope comprising at least one such probe is also provided.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: January 7, 2020
    Assignees: VMICRO, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Benjamin Walter, Marc Faucher
  • Patent number: 10473599
    Abstract: An X-ray source uses excitation of a liquid metal beam of ions or ionized droplets to produce an X-ray output with higher brightness than conventional sources. The beam may be accelerated from a liquid metal source using an extraction electrode. The source may have an emitter tip, and the acceleration of the liquid metal may include field emission from a Taylor cone. An electrostatic or electromagnetic focusing electrode may be used to reduce a cross-sectional diameter of the beam. The liquid metal beam has a relatively high velocity as it does not suffer from flow turbulence, thus allowing for a more energetic excitation and a correspondingly higher brightness. A beam dump may also be used to collect the liquid metal beam after excitation, and may be concave with no direct sight lines to either an electron beam cathode or to X-ray windows of an enclosure for the source.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: November 12, 2019
    Inventors: Roger D. Durst, Christoph Ollinger
  • Patent number: 10446370
    Abstract: A charged particle beam apparatus includes: an irradiation unit that irradiates a sample with a charged particle beam; an image formation section that detects a charged particle generated from the sample due to the irradiation with the charged particle beam and forms an image based on a signal obtained by detecting the charged particle; an input reception unit that receives an observation condition; a derivation section that derives second observation parameters proper for the observation condition based on the received observation condition and first observation parameters stored in a storage unit; and a control unit that controls the irradiation unit based on the second observation parameters.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: October 15, 2019
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventor: Hidekazu Suzuki
  • Patent number: 10366858
    Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: July 30, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hiroyasu Shichi, Shinichi Matsubara, Yoshimi Kawanami, Hiroyuki Muto
  • Patent number: 10276343
    Abstract: A method of acquiring an image of an image acquiring region of a sample comprises a first step of irradiating and scanning an ion beam in a first scan pattern on a first scan region of a sample, the scan region including therein the image acquiring region, and a second step of detecting secondary charged particles generated by irradiating and scanning the ion beam on the first scan region of the sample and generating first image data of the image acquiring region. The first and second steps are repeated a plurality of times using different scan patterns on different scan regions that differ from the first scan and the first scan region and from one another, each of the different scan regions including therein the image acquiring region, to generate a plurality of image data of the image acquiring region.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: April 30, 2019
    Inventors: Tomokazu Kozakai, Fumio Aramaki, Osamu Matsuda, Kensuke Shiina, Kazuo Aita, Anto Yasaka
  • Patent number: 10197598
    Abstract: A probe that enables a circuit board for electronic components, which is a measurement subject, to be disposed more densely. The probe is capable of simultaneously measuring a plurality of locations. The probe includes a plurality of main body portions having central conductors that make contact with connectors, and a first member that binds the plurality of main body portions together. A recess portion, having a base surface from which tip ends of the plurality of central conductors project, is provided in the first member. The recess portion has a sloped surface that flares outward from a base portion of the recess portion toward an opening in the recess portion.
    Type: Grant
    Filed: April 25, 2017
    Date of Patent: February 5, 2019
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Takayoshi Yui
  • Patent number: 10176964
    Abstract: A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens focusing the ions extracted by the extraction electrode, in which a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through a hole of the condenser lens including the first lens electrode.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: January 8, 2019
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Yasuhiko Sugiyama, Hiroshi Oba
  • Patent number: 10113981
    Abstract: Electron beam manufacturing processes, and systems that perform the processes, are described that utilize real-time analysis and control of the electron beam manufacturing processes by detecting secondary x-rays that are generated as a result of the electron beam contacting a workpiece. The detected secondary x-rays are used to generate, in real-time, a three-dimensional cross-sectional image of the portion or region of the workpiece surrounding the location contacted by the electron beam. In addition, real-time analysis of the three-dimensional cross-sectional image can be used to detect defects and real-time re-work or correction of defects can be performed by directing an electron beam back to an area with a defect.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: October 30, 2018
    Assignee: Lockheed Martin Corporation
    Inventor: Steven Wylie Mitchell
  • Patent number: 10115561
    Abstract: A method of investigating a specimen using a charged particle microscope, including: Producing and storing a first image, of a first, initial surface of the specimen; In a primary modification step, modifying said first surface, thereby yielding a second, modified surface; Producing and storing a second image, of said second surface; Using a mathematical Image Similarity Metric to perform pixel-wise comparison of said second and first images, so as to generate a primary figure of merit for said primary modification step.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: October 30, 2018
    Assignee: FEI Company
    Inventors: Pavel Potocek, Faysal Boughorbel, Mathijs Petrus Wilhelmus van den Boogaard, Emine Korkmaz
  • Patent number: 10074529
    Abstract: An electron multiplier is positioned relative to at least one dynode to direct a beam of secondary particles from the at least one dynode to a collector area of the electron multiplier and not to a channel area of the electron multiplier for a range of electron multiplier voltages applied by one or more voltage sources to the electron multiplier and for a dynode voltage applied by the one or more voltage sources to the at least one dynode. The electron multiplier includes an aperture with an entrance cone and walls of the entrance cone comprise the collector area and an apex of the entrance cone comprises the channel area. An electron multiplier voltage of the range of electron multiplier voltages is applied to the electron multiplier and the dynode voltage is applied to the at least one dynode using the one or more voltage sources.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: September 11, 2018
    Assignee: DH Technologies Development Pte. Ltd.
    Inventors: Bruce Andrew Collings, Pascal Martin, Stephen Bruce Locke
  • Patent number: 10056227
    Abstract: A focused ion beam apparatus includes a sample tray on which a sample is placed, and a focused ion beam column for irradiating the sample with a focused ion beam to obtain a micro sample-piece. A sample chamber contains therein the sample tray and the focused ion beam column. A side-entry-type carrier is inserted into and removed from the sample chamber, with a front end side of the carrier holding the sample-piece. A sample-piece moving unit moves the sample-piece between the sample tray and the carrier. The sample tray is movable along at least x, y, and z axes, and an end of the sample tray is provided with a carrier engagement part releasably engageable with the carrier so that movement of the sample tray is accompanied by corresponding movement of the carrier.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: August 21, 2018
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Tsuyoshi Oonishi, Toshiyuki Iwahori
  • Patent number: 10041949
    Abstract: A method of generating a high resolution two-dimensional image of a sample comprising cells and extracellular structures is provided. In certain embodiments, the method comprises: labeling a sample with at least one mass tag, thereby producing a labeled sample; scanning the sample with a secondary ion mass spectrometer (SIMS) ion beam to generate a data set that comprises spatially-addressable measurements of the abundance of the mass tag across an area of the sample; and outputting the data set. In many embodiments, the data set contains the identity and abundance of the mass tag. A system for performing the method is also provided.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: August 7, 2018
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Sean C. Bendall, Garry P. Nolan, Robert M. Angelo
  • Patent number: 10037862
    Abstract: A charged particle detecting device includes: a holding structure; a first charged particle detector at the terminal portion of the holding structure; a second charged particle detector at the terminal portion of the holding structure; a detector head at the terminal portion of the holding structure; and a first electrode which is transmissive for the first and second species of charged particles covering an entrance opening of the detector head.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: July 31, 2018
    Assignee: Carl Zeiss Microscopy, LLC
    Inventors: Sybren J. Sijbrandij, John A. Notte, IV, Raymond Hill
  • Patent number: 10014157
    Abstract: A method for acquiring an image, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes performing an equal-width scan of the ion beam in a first direction that obliquely intersects the linear edge and sweep in a second direction intersecting the first direction. The ion beam is sequentially scanned in different patterns on different scan regions of parallelogram shape, each of which includes the image acquiring region. Secondary charged particles are detected to generate image data of all the scan regions, and image data of the scan regions are calculated to generate image data of the image acquiring region. The image data of the image acquiring region are synthesized to display the image data of the image acquiring region.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: July 3, 2018
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Tomokazu Kozakai, Fumio Aramaki, Osamu Matsuda, Kensuke Shiina, Kazuo Aita, Anto Yasaka
  • Patent number: 9983152
    Abstract: A system and method of characterizing a work piece, comprising: scanning an ion beam across an exposed surface of a work piece, the ion beam causing the emission of secondary electrons at multiple imaging points of the scan, the number of secondary electrons emitted varying at different ones of the multiple imaging points; detecting the emitted secondary electrons at each of the multiple imaging point to form an image, the brightness of each point in the image being determined by the number of secondary electrons detected at a corresponding imaging point on the work piece; determining grain boundaries in the work piece using the differences in brightness at different points in the image, the grain boundaries defining multiple grains; directing a charged particle beam toward one or more analysis points within one or more of the grains, the number of the one or more analysis points within each grain being less than the number of imaging points within the same grain; and detecting emissions from the work piec
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: May 29, 2018
    Assignee: FEI Company
    Inventors: Steven Randolph, Chad Rue
  • Patent number: 9966218
    Abstract: The present invention provides an electron beam device that achieves high spatial resolution and high luminance, while remaining insusceptible to the effects of external disturbance. The present invention relates to an electron beam device, wherein, between, e.g., an electron source for generating an electron beam and an objective lens for focusing the electron beam onto a sample, a high voltage beam tube is disposed close to the electron source and a low voltage beam tube is disposed close to the objective lens. This makes it possible to achieve high luminance while maintaining spatial resolution, even with an SEM that is provided with a type of objective lens that actively leaks a magnetic field onto a sample.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: May 8, 2018
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tsunenori Nomaguchi, Toshihide Agemura
  • Patent number: 9934938
    Abstract: A focused ion beam apparatus includes a focused ion beam irradiation mechanism that forms first and second cross-sections in a sample. A first image generation unit generates respective first images, either reflected electron images or secondary electron images, of the first and second cross-sections, and a second image generation unit generates a second image that is an EDS image of the first cross-section. A control section generates a three-dimensional image of a specific composition present in the sample based on the first images and the second image.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: April 3, 2018
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Atsushi Uemoto, Xin Man, Tatsuya Asahata
  • Patent number: 9842414
    Abstract: The present invention relates to a method and apparatus for X-ray phase contrast imaging. The method comprises the following steps: from the measured phase gradient and overall attenuation information, an electron density is computed; the contribution pc of the Compton scattering to the overall attenuation is estimated from the electron density; the contribution pp of the photo-electric absorption to the overall attenuation is estimated from the overall attenuation and the contribution pc; the values pc and pp are used to reconstruct a Compton image and a photo-electric image; by linear combination of these two images, a monochromatic image at a desired energy is obtained.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: December 12, 2017
    Assignee: KONINKLIJKE PHILIPS N.V.
    Inventors: Thomas Koehler, Ewald Roessl, Dirk Schafer
  • Patent number: 9812288
    Abstract: The objective of the present invention is to simply perform image observation through transmitted charged particles. A sample irradiated by a charged particle beam is disposed directly or via a predetermined member on a light-emitting element (23) whereinto charged particles that have traversed or scattered inside the sample enter, causing a light to be emitted therefrom, which is collected and detected efficiently using a light transmission means (203) to generate a transmission charged particle image of the sample.
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: November 7, 2017
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Minami Shouji, Takashi Ohshima, Yuusuke Oominami, Hideo Morishita, Kunio Harada
  • Patent number: 9805905
    Abstract: A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 31, 2017
    Assignee: NuFlare Technology, Inc.
    Inventors: Hiroshi Yamashita, Ryoichi Yoshikawa, Kazuhiro Chiba, Hiroshi Matsumoto
  • Patent number: 9653257
    Abstract: A scanning electron microscopy system for mitigating charging artifacts includes a scanning electron microscopy sub-system for acquiring multiple images from a sample. The images include one or more sets of complementary images. The one or more sets of complementary images include a first image acquired along a first scan direction and a second image acquired along a second scan direction opposite to the first scan direction. The system includes a controller communicatively coupled to the scanning electron microscopy sub-system. The controller is configured to receive images of the sample from the scanning electron microscopy sub-system. The controller is further configured to generate a composite image by combining the one or more sets of complementary images.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: May 16, 2017
    Assignee: KLA-Tencor Corporation
    Inventors: Christopher Sears, Ben Clarke
  • Patent number: 9613441
    Abstract: A method and a related system (IMA) for reconstructing an image of an electron density in a subject PAT. An x-ray radiation imager is used to expose the subject PAT to radiation to receive projection data. The reconstruction method combines projection data from two channels, namely Compton scatter based attenuation data pC and phase shift data pd?.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: April 4, 2017
    Assignee: KONINKLIJKE PHILIPS N.V.
    Inventors: Thomas Koehler, Bernhard Johannes Brendel, Ewald Roessl
  • Patent number: 9555499
    Abstract: A method of cutting a super-hard material (8) using an electron beam (6), wherein the electron beam (6) is directed onto a surface of the super-hard material (8) and moved relative to the surface such that the electron beam (6) moves across the surface of the super-hard material (8) at an electron beam scanning velocity in a range 100 to 5000 mms?1 to cut the super-hard material (8).
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: January 31, 2017
    Assignee: Element Six Technologies Limited
    Inventor: Christopher John Howard Wort
  • Patent number: 9464995
    Abstract: Methods and devices for magnified imaging of three-dimensional samples are disclosed. The methods include imaging sample sections of a sample section series using a first particle-optical device. Coordinates of the imaged sample point are acquired and stored in such a way that the coordinates of the imaged sample point can be associated with the respective image of this sample point. The method also includes selecting a volume of interest (VOI), and transmitting the coordinates of the selected VOI to a second particle-optical device. In addition, the method includes imaging the selected VOI by means of the second particle-optical device. A plurality of planes of a sample section are imaged in order to obtain a 3D image of the selected VOI.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: October 11, 2016
    Assignees: Carl Zeiss Microscopy GmbH, Ruprecht-Karls-Universitaet-Heidelberg
    Inventors: Martin Edelmann, Alexandra F. Elli, Andreas Schertel, Rasmus Schroeder
  • Patent number: 9336979
    Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: May 10, 2016
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Anto Yasaka, Fumio Aramaki, Yasuhiko Sugiyama, Tomokazu Kozakai, Osamu Matsuda
  • Patent number: 9315898
    Abstract: A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: April 19, 2016
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Hidekazu Suzuki, Ikuko Nakatani
  • Patent number: 9263232
    Abstract: A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: February 16, 2016
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Yusuke Ominami, Shinsuke Kawanishi, Tomohisa Ohtaki, Masahiko Ajima, Sukehiro Ito
  • Patent number: 9153419
    Abstract: A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: October 6, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tadashi Mitsui
  • Patent number: 9076688
    Abstract: Methodologies and an apparatus for enabling scatterometry to be used to estimate dimensions of fabricated semiconductor devices are provided. Embodiments include initiating scatterometry on a fabricated test structure comprising a two-dimensional array of features, each of the features being horizontally separated from an adjacent one of the features by a narrow trench region extending a first distance in a horizontal direction and each of the features being vertically separated from an adjacent one of the features by an isolated trench region extending a second distance in a vertical direction. A scattering spectra corresponding to one or more physical characteristics of the fabricated test structure based on results of the scatterometry is determined. The scattering spectra is associated with the one or more physical characteristics in a library for estimating at least one physical dimension of a fabricated structure.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: July 7, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Robert Lutz, Robert Melzer
  • Patent number: 9040911
    Abstract: Conventionally, in a general-purpose scanning electron microscope, the maximum accelerating voltage which can be set is low, and hence thin crystal samples which can be observed under normal high-resolution observation conditions are limited to samples with large lattice spacing. For this reason, there has no means for accurately performing magnification calibration. As means for solving this problem, the present invention includes an electron source which generates an electron beam, a deflector which deflects the electron beam so as to scan a sample with the electron beam, an objective lens which focuses the electron beam on the sample, a detector which detects an elastically scattered electron and an inelastically scattered electron which are transmitted through the sample, and an aperture disposed between the sample and the detector to control detection angles of the elastically scattered electron and the inelastically scattered electron.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: May 26, 2015
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takeshi Ogashiwa, Mitsugu Sato, Mitsuru Konno
  • Publication number: 20150122992
    Abstract: Method and apparatus for analysis and display of fine grained mineral samples. A portion of the sample is illuminated with a charged particle beam. Emitted radiation is detected, and a sample emission spectrum is generated and fit with a plurality of standard emission spectra of minerals in a candidate mineral composition. A mineral composition whose emission spectrum best fits the sample emission spectrum is selected from a plurality of candidate mineral compositions. An assigned color is received for each mineral in the selected mineral composition, and the assigned colors are blended according to the proportion of each mineral in the selected mineral composition. An image pixel corresponding to the portion of the sample is rendered for display.
    Type: Application
    Filed: November 6, 2013
    Publication date: May 7, 2015
    Applicant: FEI Company
    Inventors: Michael James Owen, Garth Howell, Ashley Donaldson
  • Patent number: 9000365
    Abstract: Provided are a pattern measuring apparatus and a computer program which determine whether a gap formed in a sample (201) is a core gap (211) or a spacer gap (212). The secondary electron profile of the sample (201) is acquired, the feature quantities of the secondary electron profile at the positions of edges (303, 305) are detected, and based on the detected feature quantities, whether each gap adjacent to each of the edges (303, 305) is the core gap (211) or the spacer gap (212) is determined. Furthermore, the waveform profile of the spacer (207) is previously stored, the secondary electron profile of the sample (201) is acquired, a matching degree of the secondary electron profile and the stored waveform profile at the position of each spacer (207) is detected, and based on the detected matching degree, whether the each gap adjacent to each spacer (207) is the core gap (211) or the spacer gap (212) is determined.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: April 7, 2015
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Yuzuru Mochizuki, Maki Tanaka, Miki Isawa, Satoru Yamaguchi
  • Patent number: 8981293
    Abstract: An inspection system includes: an automated optical inspection device detecting a defect of an inspection object by using a light; a scanning electron microscope device for inspecting the defect of the inspection object by using an electron beam and including a vacuum chamber; a stage positioned below and spaced from the scanning electron microscope device and supporting the inspection object; and a transferring device connected to the scanning electron microscope chamber and the automated optical inspection and transferring the scanning electron microscope device and the automated optical inspection device to positions over the stage. Air is in a gap between the chamber and the inspection object. Accordingly, an inspection object of a large size may be inspected for analysis without damage to the inspection object.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: March 17, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong-Hyun Gong, Young-Gil Park, Jae-Kwon Lee, Jung-Un Kim, Do-Soon Jung, Hyun-Jung Kim, Geum-Tae Kim
  • Patent number: 8963081
    Abstract: When a time-of-flight mass selector having a chopper using a deflector selects the masses of the ions, an ion beam is deflected. As a result, at least a part of the ion beams diagonally pass through an aperture electrode with respect to the axis. Accordingly, there has been a problem that a position on an object irradiated with a cluster ion beam, results in moving. This mass selector includes: a flight tube having an equipotential space that makes a charged substance fly therein; a deflector that is installed in a downstream side with respect to the flight tube in a direction in which the charged substance flies; a first aperture electrode that is installed in a downstream side with respect to the deflector in a direction in which the charged substance flies; and a second aperture electrode that is installed in between the deflector and the first aperture electrode.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: February 24, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kota Iwasaki
  • Patent number: 8946628
    Abstract: There is a limit in range and distance in which an electron beam can interfere and electron interference is implemented within a range of a coherence length. Therefore, interference images are consecutively recorded for each interference region width from an interference image of a reference wave and an observation region adjacent to the reference wave by considering that a phase distribution regenerated and observed by an interference microscopy is a differential between phase distributions of two waves used for interference and a differential image between phase distributions of a predetermined observation region and a predetermined reference wave is acquired by acquiring integrating phase distributions acquired by individually regenerating the interference images. This work enables a wide range of interference image which is more than a coherence length by arranging phase distribution images performed and acquired in the respective phase distributions in a predetermined order.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: February 3, 2015
    Assignee: Hitachi, Ltd.
    Inventors: Ken Harada, Hiroto Kasai
  • Patent number: 8937281
    Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: January 20, 2015
    Assignee: Hermes Microvision, Inc.
    Inventors: Yan Zhao, Jack Jau, Wei Fang
  • Patent number: 8921805
    Abstract: An ion beam system comprises a voltage supply system 7 and at least one beam deflector 39 having at least one first deflection electrode 51a, 51b, 51c and plural second deflection electrodes 52a, 52b, 52c, wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: December 30, 2014
    Assignee: Carl Zeiss Microscopy GmbH
    Inventors: Josef Biberger, Ralph Pulwey, Andreas Adolf
  • Patent number: 8912487
    Abstract: Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: December 16, 2014
    Assignee: HItachi High-Technologies Corporation
    Inventors: Kunio Sakamoto, Megumi Aizawa, Satoshi Tomimatsu, Isamu Sekihara
  • Patent number: 8901494
    Abstract: A sample analyzer is offered which creates a ternary scatter diagram representing a concentration ratio distribution of three elements out of several elements to be analyzed. This three-dimensional graph is created by adding an axis to the ternary scatter diagram and representing concentration information about the two additional elements on the added axis. The sample analyzer performs elemental analysis of a sample by scanning a primary beam over the sample and detecting a signal emanating from the sample. The added axis intersects the plane of the ternary scatter diagram.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: December 2, 2014
    Assignee: JEOL Ltd.
    Inventor: Shingo Kinoshita
  • Patent number: 8901660
    Abstract: A semiconductor structure includes a grounding unit, a P-type substrate, a P-type well area, an NMOS structure, a P-type well contact area, a shallow trench isolation structure, and a charge guiding groove. The P-type substrate is formed above the grounding unit. The P-type well area is formed on the P-type substrate. The NMOS structure is formed on the P-type well area, and the NMOS structure includes at least one exposed N-type source area, at least one exposed N-type drain area, and at least one exposed N-type gate area. The P-type well contact area is formed on the P-type well area. The shallow trench isolation structure is disposed between the NMOS structure and the P-type well contact area. The charge guiding groove passes through the P-type well contact area and one part of the P-type well area and is electrically connected with the grounding unit.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: December 2, 2014
    Assignee: Inotera Memories, Inc.
    Inventor: Wei Chih Wang
  • Patent number: 8895921
    Abstract: An inspection apparatus is provided comprising in combination at least an optical microscope (2, 3, 4) and an ion- or electron microscope (7, 8) equipped with a source (7) for emitting a primary beam (9) of radiation to a sample (10) in a sample holder. The apparatus may comprise a detector (8) for detection of secondary radiation (11) backscattered from the sample and induced by the primary beam. The optical microscope is equipped with an light collecting device (2) to receive in use luminescence light (12) emitted by the sample and to focus it on a photon-detector (4).
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: November 25, 2014
    Assignee: Delmic B.V.
    Inventors: Pieter Kruit, Jacob Pieter Hoogenboom, Aernout Christiaan Zonnevylle
  • Patent number: 8890093
    Abstract: A focused ion beam apparatus includes a lens interferometer configured to detect a relative position of an ion beam column and a sample. An image forming section includes an irradiation position specifying section configured to specify an irradiation position of an ion beam based on the detected relative position of the ion beam column and the sample, and a luminance setting section configured to set luminance of a pixel of an observation image based on the specified irradiation position of the ion beam and a detected amount of secondary particles.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: November 18, 2014
    Assignee: Hitachi High-Tech Science Corporation
    Inventors: Tomokazu Kozakai, Fumio Aramaki, Osamu Matsuda
  • Publication number: 20140326877
    Abstract: A single column charged particle source with user selectable configurations operates in ion-mode for FIB operations or electron mode for SEM operations. Equipped with an x-ray detector, energy dispersive x-ray spectroscopy analysis is possible. A user can selectively configure the source to prepare a sample in the ion-mode or FIB mode then essentially flip a switch selecting electron-mode or SEM mode and analyze the sample using EDS or other types of analysis.
    Type: Application
    Filed: May 6, 2014
    Publication date: November 6, 2014
    Applicant: FEI Company
    Inventor: Brian Roberts Routh, JR.
  • Patent number: 8878129
    Abstract: According to one embodiment, a pattern measurement apparatus includes a scan controller, a focus controller, a stage, a sensor, a signal processor, and a measurement unit. The scan controller is configured to control a scanning direction of an electron beam. The focus controller is configured to control a focus position of the electron beam. The stage is configured to have a substrate placed on the stage, a pattern being provided in the substrate. The sensor is configured to sense secondary electrons due to the electron beam irradiated onto the pattern. The signal processor is configured to process a signal sensed by the sensor. The signal processor is configured to determine at least one of third signals from at least one of first signals and at least one of second signals. The measurement unit is configured to measure a position of the pattern from the third signals.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Kentaro Kasa
  • Patent number: 8859964
    Abstract: An electron microscope is offered which has a detector and a noise canceling circuit whose offset can be easily adjusted if any information about the offset of the detector is not available. Also, a method of adjusting this microscope is offered. The method of adjusting the electron microscope (1) starts with measuring the output voltage from a preamplifier (20) at given timing while blocking the electron beam transmitted through a sample (14) from hitting the detector (15) (step S140). An offset voltage to be set into the noise canceling circuit (30) is calculated based on the measured output voltage from the preamplifier (20) (step S150). The calculated offset voltage is set into the noise canceling circuit (30) (step S160).
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: October 14, 2014
    Assignee: JEOL Ltd.
    Inventor: Yuji Kohno