Abstract: The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Abstract: A transmission electron microscope comprises a high-voltage source for outputting a high voltage at two high-voltage outputs and outputting a control signal at a controller output; a focusing lens for focusing a beam; a monochromator which allows only those particles of the particle beam to pass whose kinetic energy is within an adjustable energy interval; an energy-dispersive component which deflects particles of different kinetic energies differently; a detector; and a controller connected to the controller output, which controls a beam deflector, arranged between the energy-dispersive component and the detector, the monochromator, or the energy-dispersive component in dependence on the control signal, or superposes plural of intensity distributions detected by the detector with an offset relative to one another, which offset is set in dependence on the control signal.

Abstract: Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam.

Abstract: There is provided a composite charged particle beam apparatus, in which a first rotation axis of a rotatable stage intersects a beam irradiation axis of a FIB column and a beam irradiation axis of an SEM so as to be substantially perpendicular thereto, respectively, at a sample observing position, the rotatable stage is provided with a supporting member which can be rotated with respect to the first rotation axis, and the supporting member is connected to a movement mechanism which can dispose the sample at the sample observing position.

Abstract: A method of examining a sample comprises mounting the sample on a sample holder; directing a beam of radiation onto a location on the sample, thereby causing a flux of stimulated photonic radiation to emanate from said location; examining said flux using a multi-channel photon-counting detector, thus accruing a measured spectrum for said location; automatically repeating said directing and examining steps for a series of successive locations, the method of which comprises choosing a beam parameter of the input beam that will influence a magnitude of said flux of stimulated photonic radiation; for each location within a first set of locations on the sample, accruing a spectrum using a first value of said beam parameter; for each location within a second set of locations on the sample, accruing a spectrum using a second value of said beam parameter.

Abstract: Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.

Abstract: Disclosed are embodiments of an ion beam shield for use in an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The ion beam shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing.

Abstract: A seal member to be contacted with an observation object is provided at an open end of a lens barrel so that the observation object can be attracted to the lens barrel via the seal member and fixed in direct and close contact with the lens barrel when a vacuum is created in the lens barrel by a vacuum pump. In other words, instead of providing a sample chamber, the observation object is fixed in close contact with the lens barrel to prevent relative movement therebetween by a suction force even without a sample chamber. In this configuration, the interior of the lens barrel can be maintained in a vacuum state despite the absence of a sample chamber and no adverse effect occurs during observation because the lens barrel and the observation object are not moved relative to each other by vibration.

Abstract: A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.

Abstract: An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L×tan ? on the basis of the detected length L of the shadow and an apparent angle ? of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.

Abstract: A particle beam system comprises a particle beam source for generating a particle beam, an objective lens for focusing the particle beam onto an object plane, wherein the objective lens comprises a focal length and an optical axis, and a scintillator arrangement, which comprises an electron receiving surface facing the object plane and which is arranged such that it is exposed to electrons, which emanate from the object plane. The scintillator arrangement further comprises a light exit face, wherein the scintillator arrangement is configured such that light rays which are generated by electrons, which are incident on the electron receiving surface leave the scintillator arrangement at the light exit face.

Abstract: Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises a tilting ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The tilting ion beam irradiating means may direct ions at the sample from more than one tilt angle. A rotating shield retention stage is also disclosed which works in concert with the tilting ion beam irradiating means.

Abstract: A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the center of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.

Abstract: A focused ion beam system includes a sample holder having a fixing plane for fixing a sample, a sample base on which the sample holder is provided, a focused ion beam irradiating mechanism that irradiates a focused ion beam to the sample, microtweezers that hold the sample and have the axial direction at a predetermined angle to a surface of the sample base, an opening/closing mechanism that opens and closes the microtweezers, a rotating mechanism that rotates the microtweezers about the axial direction, and a moving mechanism that moves the position of the microtweezers.

Abstract: A liquid metal ion gun 3 includes a liquid metal ion source 31 and a beam limiting aperture 33. The liquid metal ion source 31 includes a reservoir 36 and an emitter 35. The reservoir 36 is made of tungsten (W) and holds liquid metal gallium (Ga). The emitter 35 is made of W. The beam limiting aperture 33 is formed with a liquid metal member 44 made of Ga placed on a base 46 made of W, has an opening 41 that enables an ion beam 2 extracted from the liquid metal ion source 31 to pass therethrough, and limits the diameter of the ion beam 2. The beam limiting aperture 33 has a groove structure 45 that causes the liquid metal 44 to gather into a region located around the opening 41. The lifetime of the beam limiting aperture can be increased, and an emission can be maintained stable for a long time period and reproducibly restored to a stable state.

Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.

Abstract: Various aspects are directed to systems and methods for assessing neural activity of a neural region having multiple subfields. In certain embodiments, a method includes evoking a cellular electrical response in at least one subfield due to neural activity in the neural region, capturing image data of the electrical response at a level sufficiently detailed in space and time to differentiate between polarization-based events of two respective portions of the subfield, and then assessing neural activity by correlating space and time information, from the captured data, for the two respective portions of the sub-field. Other more specific aspects of the invention involve different preparation and neural stimulation approaches which can vary depending on the application.

Abstract: A method of making axial alignment of a charged particle beam starts with obtaining at least first through sixth image data while controlling the focal position of the beam on a sample in the direction of incidence, the excitation current in a first alignment coil, and the excitation current in a second alignment coil. Then, values of the excitation currents in the first and second alignment coils for the axial alignment of the beam are calculated from the at least first through sixth image data.

Abstract: An energy beam drawing apparatus includes a member, positioned between an energy beam source and a substrate, on which a deposit is deposited and a removing unit which removes the deposit. The removing unit includes a catalyst for generating, from a gas, an active species for decomposing the deposit by irradiation with the energy beam, a supplying mechanism for supplying the gas to a position where the active species is generated, and a moving mechanism for moving, when executing processing of removing the deposit, the catalyst to a first position which is irradiated with the energy beam, and moving, when executing drawing processing on the substrate, the catalyst to a second position which is not irradiated with the energy beam.

Abstract: A semiconductor wafer 11 is irradiated for scanning with a charged particle beam 6 so as to detect secondary charged particles 9 obtained from the wafer 11 as a result of the irradiation of the beam 6. A detected image of an inspection area obtained based on scanning information and on a detection signal derived from the secondary charged particles 9 is compared with a detected image of a reference area to find a difference therebetween. The difference is compared with a threshold value to detect a defect candidate. Defect information including positional information about the defect candidate is generated in such a manner as to include a relative position of a predetermined feature point within each of repeat patterns formed on the semiconductor wafer 11 with regard to the origin of a coordinate area established in each of these repeat patterns, and a relative position of the defect candidate with regard to the feature point.

Abstract: A surface analyzer 1 includes: a sample stage 6 for placing a sample 5; a source for generating multicharged ions 3 for irradiating a beam 4 of multicharged ions having a valence of 15 or higher to the sample 5 placed on the sample stage 6; a mass analyzer 8 for detecting secondary ions 7 generated as a result of irradiating the beam of multicharged ions 4 to the sample 5; a secondary electron detector 10 for detecting secondary electrons 9 generated as a result of irradiating the beam of multicharged ions 4 to the sample 5; and a controller of mass analyzer 12 for generating analysis start signals in response to the secondary electron signals received, and transmitting the start signals to the mass analyzer. The surface analyzer 1 enables high-quality analysis of the surface of the sample in short time by using the multicharged ions.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: There is provided a method and a device for accurately detecting the contact of a mechanical probe with a contact object. The contact detecting device comprises a mechanical probe movable for being in contact with a contacted object, a charged particle beam source which generates a charged particle beam applied to the contacted object, a detector for detecting secondary particles or reflected particles from the contacted object, a calculating device which calculates, from a detection signal from the detector, a feature quantity of a shadow of the mechanical probe projected on the contacted object, and a control device which controls the operation of the mechanical probe. The calculating device calculates, as the feature quantity of the shadow of the mechanical probe, a shadow depth S(x, y), and obtains an evaluation value J(z), showing a distance between the contacted object and the mechanical probe, based on the shadow depth S(x, y).

Abstract: The crystal structure of the emitter can be accurately grasped from a FIM image without being influenced by disturbances, such as contamination, and even if the rearrangement of atoms has been performed, whether or not the crystal structure of the emitter has returned to the original state can also be accurately determined. There is a provided a focused ion beam apparatus including an emitter 10, a gas source 11 which supplies gas G2, a cooling unit 12 which cools the emitter, a heating unit 13 which heats the tip of the emitter, an extraction power source unit 15 which applies an extraction voltage to ionize the gas into gas ions at the tip of the emitter, and then extract the gas ions, a beam optical system 16 which makes the extracted gas ions into a focused ion beam (FIB), and then radiates the focused ion beam onto a sample S, an image acquiring mechanism 17 which acquires a FIM image of the tip of the emitter, and a control unit 7 having a display unit and a storage unit 7b.

Abstract: An inspection apparatus is provided comprising in combination at least an optical microscope (2, 3, 4) and an ion- or electron microscope (7, 8) equipped with a source (7) for emitting a primary beam (9) of radiation to a sample (10) in a sample holder. The apparatus may comprise a detector (8) for detection of secondary radiation (11) backscattered from the sample and induced by the primary beam. The optical microscope is equipped with an light collecting device (2) to receive in use luminescence light (12) emitted by the sample and to focus it on a photon-detector (4).

Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

Abstract: An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.

Abstract: A vacuumed device that includes: a sealed housing, an electron beam source, an electron optic component, a thin membrane, and a detector. The thin membrane seals an aperture of the sealed housing. The sealed housing defines a vacuumed space in which vacuum is maintained. The electron beam source is configured to generate an electron beam that propagates within the vacuumed space, interacts with the electron optic component and passes through the thin membrane. A first portion of the sealed housing is shaped to fit a space defined by non-vacuumed scanning electron microscope components that are maintained in a non-vacuum environment.

Abstract: The invention relates to a method for the production of a multilayer electrostatic lens arrangement with at least one lens electrode in general, a method for the production of a phase plate in particular as well as the lens arrangement, the phase plate and a transmission electron microscope with the phase plate. The lens arrangement or the phase plate is produced from a thin self-supporting silicon nitride membrane which is fixed in a macroscopic chip with deposition of further layers. The central bore as well as the aperture opening are milled out by means of an ion beam.

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.

Abstract: A method for treating a surface of an object and a device suitable in particular for performing this method provide for examining the surface of the object with the aid of a particle beam to counteract the charge buildup on the object. A gas is supplied to convey the charge away from the surface and/or to neutralize it.

Abstract: A microtome for in situ residence within a chamber of a scanning electron microscope (SEM) and a SEM including the microtome is disclosed. The microtome includes a specimen holder for holding a specimen thereon at high voltage to produce a retardation field thereat and a movable knife. The SEM includes a backscatter electron detector disposed adjacent to specimen holder. The knife arranged is to be carried into engagement with the specimen on the specimen holder to slice a portion of the specimen away to expose a new face of the specimen without interfering with the high voltage on the specimen, and is mounted so that after having engaged the specimen to expose a new face of the specimen it is withdrawn to a retracted position whereupon it does not interfere with the retardation field.

Abstract: An electron detecting mechanism having a plate provided with an opening permitting passage of the primary beam, an energy filter, a first light detector, and a second light detector. The plate has first and second scintillating surface on its opposite sides. The first scintillating surface faces a sample. The second scintillating surface faces the energy filter. When the primary beam hits the sample, electrons are produced and some of them impinge as first electrons on the first scintillating surface. Consequently, first scintillation light is produced and detected by the first light detector. At the same time, some of the electrons produced from the sample pass through the opening of the plate, are repelled by the energy filter, and impinge as second electrons on the second scintillating surface. As a result, second scintillation light is produced and detected by the second light detector.

Abstract: Methods for using sub-100V electron beam landing energies for performing circuit edit operations. Circuit edit operations can include imaging for navigation and etching in the presence of a suitable gas. Low landing energies can be obtained by modifying a decelerator system of native FESEM equipment, or by using biasing means near the sample surface for decelerating electrons of the primary beam. At low landing energies near the operating voltage of a semiconductor circuit, voltage contrast effects can be visually seen for enhancing operator navigation. Low landing energies can be used during etching processes for minimizing the interaction volume of the beam and obtaining accurate and localized etching.

Abstract: Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like). In certain embodiments, the ion sources, systems and methods can enhance the ability to make tips having desired physical attributes (e.g., the number of atoms on the apex of the tip). This can enhance performance (e.g., increase reliability, stability and the like).

Abstract: A defect repair apparatus for an EUV mask has an ion beam column that scans and irradiates the EUV mask with a focused hydrogen ion beam such that no region of the EUV mask receives an amount of beam irradiation exceeding 4×1016 ions/cm2. The ion beam column comprises a gas field ion source having an emitter with a pointed tip end that emits hydrogen ions that form the hydrogen ion beam, and an ion optical system that focuses and scans the hydrogen ion beam onto the EUV mask. A detector detects secondary charged particles generated from the EUV mask when irradiated with the hydrogen ion beam, and an image forming section forms and displays an observation image of the EUV mask on the basis of an output signal from the detector so that a defect in the EUV mask and the progress of the defect repair can be observed.

Abstract: The present invention provides a charged particle beam device in which signal electrons (14) are generated from a sample when the sample (11) is irradiated with a primary charged particle beam (3), and then enter different positions of a position-sensitive signal detector (16) in accordance with energy of the signal electrons (14), whereby an energy distribution image of the signal electrons generated from the sample is acquired. Accordingly, it becomes possible to discriminate and select signal electrons having arbitrary energy to thereby obtain an image to which information specific to the arbitrary energy is reflected, and to acquire various characteristic information of the sample.

Abstract: Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth. The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.

Abstract: An improved method and apparatus for imaging and milling a substrate using a FIB system. Preferred embodiments of the present invention use a mixture of light and heavy ions, focused to the same focal point by the same beam optics, to simultaneously mill the sample surface (primarily with the heavy ions) while the light ions penetrate deeper into the sample to allow the generation of images of subsurface features. Among other uses, preferred embodiments of the present invention provide improved methods of navigation and sample processing that can be used for various circuit edit applications, such as backside circuit edit.

Abstract: To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 ?m and less than 1 ?m, and the cone angle ? of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.

Abstract: A quantification method of functional groups in an organic thin layer includes: a) measuring an absolute quantity per unit area of an analysis reference material having functional groups included in a reference organic thin layer by means of MEIS spectroscopy; b) carrying out spectrometry for the same reference organic thin layer as in a) and thereby obtaining peak intensities of the functional groups in the reference organic thin layer; c) carrying out the same spectrometry as in b) for an organic thin layer to be analyzed having the same functional groups and thereby measuring peak intensities of the functional groups with unknown quantity; and d) comparing the peak intensities of the functional groups measured in b) with respect to the absolute quantity of the analysis reference material in a) and thereby determining the absolute quantity per unit area of the functional groups with unknown quantity measured in c).

Abstract: In an electron probe microanalyzer (EPMA) and a method of use thereof, even if plural sets of X-ray image data are obtained at different timings from regions between which a positional deviation occurs, processing for obtaining the correlation is performed precisely. The sets of X-ray image data are obtained from the same region of a sample using the EPMA at different timings and stored in memory along with sets of electron image data based on detection of secondary or backscattered electrons arising from the region. The sets of electron image data obtained at the different timings are compared, and the amount of positional deviation is calculated. An operation for extracting a region common to the regions respectively producing the sets of X-ray image data obtained at the different timings is performed on these sets of X-ray image data based on the calculated amount of positional deviation.

Abstract: The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).

Abstract: The invention relates to a method for obtaining images from slices of a specimen, the method comprising: repeatedly obtaining an image of the surface layer of the specimen (1) and removing the surface layer of the specimen, thereby bringing the next slice to the surface; characterized in that after at least one of the removals of a surface layer the specimen is exposed to a staining agent. This method is especially suited for use in a particle-optical instrument equipped with both a scanning electron microscope column (20) and a focused ion beam column (10). The specimen can e.g. be stained in situ by admitting a gas, such as OsO4 (osmiumtetroxide), to the specimen. This method also makes it possible to perform differential staining by first making an image of the specimen exposed to a first staining agent, and subsequently making an image of the specimen when it is additionally stained by a second staining agent.

Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Abstract: An electron microscope according to the present invention includes a phase plate (510) having a thickness which changes in a radial direction, and adjusts a phase difference caused by a difference in electron beam path due to an effect of a spherical aberration when an electron beam is converged by a lens or an image of the electron beam is formed. Accordingly, the phase difference caused by the difference in electron beam path is adjusted, to thereby improve the coherence, so that a phase contrast image of transmitted electrons can be obtained at a higher resolution.

Abstract: A method of planar imaging on semiconductor chips using focused ion beam includes the initial step of disposing at least a positioning symbol to designate a testing area. A metal membrane is positioned on the testing area. The testing chip is trimmed to form a first testing chip. A blind opening is cut proximate to the testing area on the first testing chip forms a second testing chip. The second testing chip is mounted on an inclinable platform. The mounted second testing chip is rotated with the inclinable platform. Ion beams are emitted into the opening at an angle of inclination. Ion beams are emitted in the direction of the incident ray to form planar images of different depths parallel to the metal membrane on the testing area.

Abstract: The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the electrodes.

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, He-3 is used.

Abstract: Provided is a spectrophotometer using medium energy ion. The spectrophotometer using medium energy ion is configured to include: an ion source 10 generating ions; a collimator 20 collimating the ions as a parallel beam; an accelerator 30 accelerating the parallel beam; an ion beam pulse generator 40 pulsing the accelerated ion beam; a focusing objective 50 focusing the pulsed ion beam on a specimen 1; a detector 60 detecting a spectroscopic signal of scattered ion from a specimen 1; and a data analyzer 70 analyzing and processing the spectroscopic signal detected by the detector 60.