Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Abstract: Disclosed are embodiments of an ion beam sample preparation thermal management apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. A heat sink means is configured to conduct heat away from the sample undergoing sample preparation in the ion beam.

Abstract: A column for a charged particle beam device is described. The column includes a charged particle emitter for emitting a primary charged particle beam as one source of the primary charged particle beam; a biprism adapted for acting on the primary charged particle beam so that two virtual sources are generated; and a charged particle beam optics adapted to focus the charged particle beam simultaneously on two positions of a specimen corresponding to images of the two virtual sources.

Abstract: Briefly described, in an exemplary form, the present invention discloses a system, method and apparatus for X-ray Compton scatter imaging. In one exemplary embodiment, the present invention uses two detectors in a volumetric CT system. A first detector is positioned generally in-line with the angle of attack of the incoming energy, or, generally in-line of path x, where x is the path of the incoming energy. The first, or primary, detector detects various forms of radiation emanating from an object undergoing testing. In some embodiments, the present invention further comprises a Compton scattering system positioned generally normal to path x. In some embodiments, the Compton scattering subsystem comprises a second detector and a pin-hole collimator. The second detector detects Compton scattering energy from the object being tested.

Abstract: A transmission electron microscope has a target body position on the electron optical axis of the microscope, and an electrically conductive body off the axis of the microscope. The microscope also has an electron source for producing an axial electron beam. In use, the beam impinges upon a target body located at the target body position. The microscope further has a system for simultaneously producing a separate off-axis electron beam. In use, the off-axis electron beam impinges on the electrically conductive body causing secondary electrons to be emitted therefrom. The electrically conductive body is located such that the emitted secondary electrons impinge on the target body to neutralise positive charge which may build up on the target body.

Abstract: An improved microcalorimeter-type energy dispersive x-ray spectrometer provides sufficient energy resolution and throughput for practical high spatial resolution x-ray mapping of a sample at low electron beam energies. When used with a dual beam system that provides the capability to etch a layer from the sample, the system can be used for three-dimensional x-ray mapping. A preferred system uses an x-ray optic having a wide-angle opening to increase the fraction of x-rays leaving the sample that impinge on the detector and multiple detectors to avoid pulse pile up.

Abstract: A proton computed tomography (pCT) detector system, including two tracking detectors in sequence on a first side of an object to be imaged, two tracking detectors in sequence on an opposite side of the object to be imaged, a calorimeter, and a computer cluster, wherein the tracking detectors include plastic scintillation fibers. All fibers in the detector system are read out by Silicon Photomultipliers (SiPM). A method of imaging an object by emitting protons from a source through two tracking detectors, through and around the object, and through two opposite tracking detectors, detecting energy of the protons with a calorimeter, and imaging the object.

Abstract: A microscope system has a VS image generation means for generating a virtual slide image of a specimen which is constructed by mutually connecting a plurality of microscope images with a first photomagnification photographed and acquired whenever an objective lens and the specimen are relatively moved in a direction perpendicular to the optical axis and which represents the entire image of the specimen, an object-of-interest set means setting an object of interest with respect to the entire image of the specimen represented by the VS image, and a three-dimensional VS image generation means for generating a three-dimensional VS image which is constructed by connecting the microscope images at different focal positions in accordance with the same focal position and which is constructed from the microscope images with a second photomagnification higher than the first photomagnification and represents the image of the object of interest.

Abstract: A method and apparatus for performing a slice and view technique with a dual beam system. The feature of interest in an image of a sample is located by machine vision, and the area to be milled and imaged in a subsequent slice and view iteration is determined through analysis of data gathered by the machine vision at least in part. A determined milling area may be represented as a bounding box around a feature, which dimensions can be changed in accordance with the analysis step. The FIB is then adjusted accordingly to slice and mill a new face in the subsequent slice and view iteration, and the SEM images the new face. Because the present invention accurately locates the feature and determines an appropriate size of area to mill and image, efficiency is increased by preventing the unnecessary milling of substrate that does not contain the feature of interest.

Abstract: An immersion solution for a microscope, the immersion solution including a metal-halogeno complex anion containing bromine or iodine and one or more types of metal elements M selected from Sn, In, Bi, Sb, Zn and Al, and an imidazolium cation, a pyridinium cation, a pyrrolidinium cation or an ammonium cation. The immersion solution includes an ionic liquid that transmits light having a predetermined wavelength, has a refractive index of no less than 1.60 and is used for a fluorescence microscope.

Abstract: A photomask defect correction method and device correct an opaque or a clear defect of a photomask. An opaque or clear defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam. The gas ions may be hydrogen ions, nitrogen ions, oxygen ions, fluorine ions or chlorine ions.

Abstract: A pattern measurement apparatus includes a beam intensity distribution creation unit to scan a charged particle beam over a reference pattern having edge portions formed at a right angle to create a line profile of the reference pattern and thus create a reference-beam intensity distribution, an edge width detection unit to determine line profiles for pattern models including edges formed at various inclination angles by use of the reference-beam intensity distribution and calculate edge widths reflecting an influence of a width of a reference beam, and a correspondence table creation unit to calculate correction values for edge positions from the calculated edge widths and the pattern models and create a correspondence table in which the edge widths and the correction values are associated with one another.

Abstract: An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided.

Abstract: A particle beam device has a first column with a first beam axis, the first column having a first particle beam generator and a first objective lens for focusing the first particle beam on an object. A second column with a second beam axis is provided, the second column having a second particle beam generator and a second objective lens for focusing the second particle beam on the object. A detector, having a detection axis, detects interacting particles and/or radiation. The first beam axis and the second beam axis define a first angle, different from 0° and from 180°. The first and second beam axes are situated in a first plane. The detection axis of the detector and the first beam axis are situated in a second plane. The first plane and the second plane define a second angle having an absolute value in the range of 65° to 80°.

Abstract: A micro cross-section processing method includes the steps of determining a linear cross-section estimated position including an observation object on a surface of the sample, irradiating the focused ion beam to the cross-section estimated position perpendicularly to or at a tilt angle to form a cross-section at a position in front of the cross-section estimated position, irradiating the focused ion beam to both ends of the cross-section to form side cuts extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam to a position on the surface of the cross-section and at a position deeper than the observation object to form a bottom cut extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam along from the side cuts to the cross-section estimated position to form wedges connecting to the bottom cut, and applying impact to a region in front of the cross-section estimated position of the sample to cleave the vicinity

Abstract: Disclosed are systems, devices and methodologies related to calibration of an ion based imaging apparatus such as a proton computed tomography scanner. In some implementations, energy degrader plates having known water-equivalent thickness (WET) values can be introduced to an ion beam to introduce different energy degradation settings. Energy detector responses to individual ions subject to such energy degradation settings can be obtained. Such responses can be normalized and correlated to water-equivalent path lengths (WEPL) of the ions based on the known WET values. Such calibration utilizing degrader plates can be performed relatively quickly and can yield accurate WEPL values that facilitate estimation of, for example, a CT image based on relative stopping power of an object.

Abstract: A scanning transmission electron microscope operated with the sample in a high pressure environment. A preferred detector uses gas amplification by converting either scattered or unscattered transmitted electrons to secondary electrons for efficient gas amplification.

Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

Abstract: A charged particle beam device is provided, including: a charged particle beam source adapted to generate a charged particle beam on an axis; an optical aberration correction device and an objective lens device, which define a corrected beam aperture angle adjusted to reduce diffraction; and a charged particle beam tilting device; wherein the optical aberration correction device and the objective lens device are adapted to provide the charged particle beam with a beam aperture angle smaller than the corrected beam aperture angle; and wherein the charged particle beam tilting device is adapted to provide a beam tilt angle which is equal or less than the corrected beam aperture angle. Further, a method of operating a charged particle beam device is provided.

Abstract: A plasma system for changing a microscopy material sample comprises a microscopy material sample holder for holding a microscopy material sample in place in a desired orientation, and a receptacle holder for receiving the sample holder and an RF antenna. The microscopy sample is positioned relative to the antenna so that no point on the antenna is in direct line-of-sight contact with the microscopy sample. This feature of avoiding direct line-of-sight contact between the antenna and the sample assists in preventing, or at least minimizing, ion sputtering of system component material onto the specimen or sample 10 that is being trimmed. Moreover, portions of the system which are in direct line-of-sight contact with the sample are comprised of material having a low sputtering yield, preferably carbon. The material may comprise graphite, and may be in the form of a carbon coating or a carbon paint.

Abstract: The invention relates to a dark-field detector for an electron microscope. The detector comprises a photodiode for detecting the scattered electrons, with an inner electrode and an outer electrode. As a result of the resistive behavior of the surface layer the current induced by a scattered electron, e.g. holes, are divided over the electrodes, so that a current I1 and I2 is induced, the sum of the current proportional to the energy of the impinging electron and the normalized ratio a function of the radial position where the electron impinges.

Abstract: A microscope, in particular a scanning probe microscope, comprising a programmable logic device.

Abstract: Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises a tilting ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. The tilting ion beam irradiating means may direct ions at the sample from more than one tilt angle.

Abstract: In a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged, a voltage is applied to a sample such that a charged particle beam does not reach the sample (referred to as “mirror state”) when the charged particle beam is applied toward the sample. Information is detected, relating to a potential on the sample using signals obtained by the voltage application.

Abstract: An electron microscope has an electron beam source generating an accelerated electron beam, electromagnetic lenses for converging the electron beam, alignment coils for adjusting the optical axis of the beam transmitted through the lenses, a control unit for controlling the ambient around a specimen, at least one vacuum pump mounted in a given location of the electron optical column, a gas inlet device mounted near the specimen, an imager for creating an image based on a signal arising from the region of the specimen illuminated with the beam, an image output device for recording and displaying the image, and a computer for controlling these components. The computer finds the orifices to be used and diameters of orifices at which the pressure is maintained without electrical discharge in an electron beam source from the selected gas species and the pressure around the specimen.

Abstract: A method for sample examination in a dual-beam FIB calculates a first angle as a function of second, third and fourth angles defined by the geometry of the FIB and the tilt of the specimen stage. A fifth angle is calculated as a function of the stated angles, where the fifth angle is the angle between the long axis of an excised sample and the projection of the axis of the probe shaft onto the X-Y plane. The specimen stage is rotated by the calculated fifth angle, followed by attachment to the probe tip and lift-out. The sample may then be positioned perpendicular to the axis of the FIB electron beam for STEM analysis by rotation of the probe shaft through the first angle.

Abstract: A wide spectral band laser pulse generating device capable of covering a spectrum formed of given wavelengths is provided, including: a monochromatic laser light source whose intensity is adjustable; non-linear optical means, a photonic crystal or a microstructured optical fiber for example, for carrying out spectral widening of the wave emitted by the light source; the light source and the non-linear optical means are configured and arranged so as to create a white supercontinuum whose continuous spectrum contains the wavelengths considered. The invention relates to the general field of the analysis of the composition of material specimens, and in particular to laser tomographic atom probes.

Abstract: The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).

Abstract: A semiconductor structure includes a grounding unit, a P-type substrate, a P-type well area, an NMOS structure, a P-type well contact area, a shallow trench isolation structure, and a charge guiding groove. The P-type substrate is formed above the grounding unit. The P-type well area is formed on the P-type substrate. The NMOS structure is formed on the P-type well area, and the NMOS structure includes at least one exposed N-type source area, at least one exposed N-type drain area, and at least one exposed N-type gate area. The P-type well contact area is formed on the P-type well area. The shallow trench isolation structure is disposed between the NMOS structure and the P-type well contact area. The charge guiding groove passes through the P-type well contact area and one part of the P-type well area and is electrically connected with the grounding unit.

Abstract: Charged particle beams with different charged particle currents are disclosed. In some embodiments, a method includes exposing a sample to a first ion beam having a first ion current at the sample, and exposing the sample to a second ion beam having a second ion current at the sample, where the first ion current is at least two times greater than the second ion current. In certain embodiments, a method includes creating a first ion beam at a first pressure, exposing a sample to the first ion beam, creating a second ion beam at a second pressure, and exposing the sample to the second ion beam, where the first pressure is at least two times greater than the second pressure.

Abstract: A particle optical arrangement providing an electron microscopy system 3 and an ion beam processing system 7 comprises an objective lens 43 of the electron microscopy system having an annular electrode 59 being a component of the electron microscopy system arranged closest to a position 11 of an object to be examined. Between the annular electrode and a principal axis 9 of the ion beam processing system 7 a shielding electrode 81 is arranged.

Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

Abstract: The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).

Abstract: Disclosed are systems and methods for applying a voltage gradient to a gas delivery system, delivering a gas through a length of the gas delivery system having the voltage gradient, the gas having a pressure-distance product of less than about 1×010?2 Torr-inches or greater than about 100 Torr-inches, and delivering the gas into a housing of an ion microscope, the housing including an emitter and an extractor.

Abstract: A dual beam system provides for operation of a focused ion beam in the presence of a magnetic field from an ultra-high resolution electron lens. The ion beam is deflected to compensate for the presence of the magnetic field.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: A method and an apparatus are for three-dimensional tomographic image generation in a scanning electron microscope system. At least two longitudinal marks are provided on the top surface of the sample which include an angle therebetween. In consecutive image recordings, the positions of these marks are determined and are used to quantify the slice thickness removed between consecutive image recordings.

Abstract: This invention provides an apparatus for estimating change of status of a plurality of particle beams, the apparatus includes a plurality of particle detectors and an estimating unit, wherein the one or the plurality of particle beams is projected to a substrate. The particle detectors detect the one or the plurality of particle beams reflected from the substrate to generate one or a plurality of detector signals. The estimating unit estimates change of the status of the one or the plurality of particle beams by executing a mathematical programming method according to the one or the plurality of detector signals. By such arrangement and monitoring method, the apparatus could estimate the drift of beams.

Abstract: The invention relates to a method for producing high-quality samples for e.g. TEM inspection. When thinning samples with e.g. a Focused Ion Beam apparatus (FIB), the sample often oxidizes when taken from the FIB due to the exposure to air. This results in low-quality samples, that may be unfit for further analysis. By forming a passivation layer, preferably a hydrogen passivation layer, on the sample in situ, that is: before taking the sample from the FIB, high quality TEM samples can be produced.

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.

Abstract: A secondary particle detector 302 for a charged particle beam system 300 includes a scintillator 304 and a transducer 312, such as a photomultiplier tube, positioned within a vacuum chamber 107. Unlike prior art Everhart-Thornley detectors, the photomultiplier is positioned within the vacuum chamber, which improves detection by eliminating optical couplings and provides flexibility in positioning the detector.

Abstract: The invention relates to an environmental cell for use in e.g. an electron microscope. The environmental cell shows an aperture (15) for passing the beam produced by the electron microscope to a sample (6) placed inside the environmental cell. The environmental cell according to the invention is characterized in that a part of the environmental cell (14) is transparent to secondary radiation such as back-scattered electrons or X-rays. This enables the detection of this radiation by a detector placed outside the environmental cell and thus a much simpler construction of the cell.

Abstract: An ion beam apparatus and a method for providing an energy-filtered primary ion beam are described. Therein, a primary ion beam having an asymmetric first energy distribution is generated by means of an ion source. The primary ion beam is energy filtered using, for example, a retarding lens.

Abstract: The present invent provides a particle detector for counting and measuring the flight time of secondary electrons and scattered ions and neutrals and to correlate coincidences between these and backscattered ions/and neutrals while maintaining a continuous unpulsed microfocused primary ion beam for impinging a surface. Intensities of the primary particle scattering and secondary particle emissions are correlated with the position of impact of the focused beam onto a materials surface so that a spatially resolved surface elemental and electronic structural mapping is obtained by scanning the focused beam across the surface.

Abstract: A laser atom probe situates a counter electrode between a specimen mount and a detector, and provides a laser having its beam aligned to illuminate the specimen through the aperture of the counter electrode. The detector, specimen mount, and/or the counter electrode may be charged to some boost voltage and then be pulsed to bring the specimen to ionization. The timing of the laser pulses may be used to determine ion departure and arrival times allowing determination of the mass-to-charge ratios of the ions, thus their identities. Automated alignment methods are described wherein the laser is automatically directed to areas of interest.

Abstract: A laser atom probe system and a method for analysing a specimen by laser atom probe tomography are disclosed. The system includes a specimen holder whereon a specimen to be analyzed may be mounted, the specimen having a tip shape. The system further includes a detector, an electrode arranged between the specimen holder and the detector, and a voltage source configured to apply a voltage difference between the specimen tip and the electrode. The system also includes at least one laser system configured to direct a laser beam laterally at the specimen tip and a tip shape monitoring means configured to detect and monitor the tip shape, and/or a means for altering and/or controlling one or more laser parameters of said laser beam(s) so as to maintain, restore or control said specimen tip shape.

Abstract: The present invention discloses a method for characterizing a membrane in a wet condition using a positron annihilation spectrometer and a sample holder thereof. Positron annihilation lifetime spectroscopy (PALS) has been know to be an invaluable tool for investigating local free-volume hole properties in various materials. Accompanying with the method and sample holder disclosed by the invention, PAS and PALS can measure the properties of various materials, such as free volume and layer structures both in the dry and wet states.

Abstract: A particle beam device and a sample receptacle apparatus, which has a sample holder, are disclosed. The sample holder is arranged in a movable fashion along at least a first axis and along at least a second axis. Furthermore, the sample holder is arranged in a rotatable fashion about a first axis of rotation and about a second axis of rotation. A first sample holding device is arranged relative to the sample holder in a rotatable fashion about a third axis of rotation, in which the third axis of rotation and the second axis of rotation are at least in part arranged laterally offset with respect to one another. Furthermore, a control apparatus is provided, in which the first sample holding device is rotatable about the third axis of rotation into an analysis position and/or treating position using the control apparatus.

Abstract: An imaging system is provided. The imaging system includes a sample to be scanned by the imaging system. An absorbance modulation layer (AML) is positioned in close proximity to the sample and is physically separate from the sample. One or more sub-wavelength apertures are generated within the AML, whose size is determined by the material properties of the AML and the intensities of the illuminating wavelengths. A light source transmits an optical signal through the one or more sub-wavelength apertures generating optical near-fields that are collected for imaging.

Abstract: A mechanical scanning stage for high speed image acquisition in a focused beam system. The mechanical scanning stage preferably is a combination of four stages. A first stage provides linear motion. A second stage, above the first stage, provides rotational positioning. A third stage above the rotational stage is moveable in a first linear direction, and the fourth stage above the third stage is positionable in a second linear direction orthogonal to the first direction. The four stages are responsive to input from a controller programmed with a polar coordinate pixel addressing method, for positioning a specimen mounted on the mechanical stage to allow an applied static focus beam to irradiate selected areas of interest, thereby imaged by collecting signals from the specimen using a polar coordinate pixel addressing method.