Abstract: A radiation detector useable in a downhole tool configured to be positioned in a borehole includes a printed circuit board and at least one detector element coupled to the printed circuit board. The at least one detector element includes a semiconductor direct conversion material for directly converting gamma rays into electrical signals. The semiconductor direct conversion material includes a cathode surface and an anode surface. In addition, the at least one detector element includes a cathode operatively connected to the cathode surface, and an anode operatively coupled to the anode surface. The radiation detector also includes a voltage source coupled to the printed circuit board and configured to provide a voltage to the at least one detector element.

Abstract: The present approach relates to the use of reference pixels provided between the primary pixels of a detector panel. Coincidence circuitry or logic may be employed so that the measured signal arising from the same X-ray event may be properly, that is the signal measured at both a reference and primary pixel may be combined so as to provide an accurate estimate of the measured signal, at an appropriate location on the detector panel.

Abstract: An imaging device includes: a first pixel cell including a first photoelectric conversion film having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the first surface, surrounding the first electrode, and a first counter electrode on the second surface, facing the first electrode and the second electrode; and a second pixel cell including a second photoelectric conversion film having a third surface and a fourth surface opposite to the third surface, a third electrode on the third surface, a fourth electrode on the third surface, surrounding the third electrode, and a second counter electrode on the fourth surface, facing the third electrode and the fourth electrode, wherein the second electrode and the fourth electrode are electrically separated from each other.

Abstract: Improvement of a frame rate and suppression of power consumption are intended. A radiological-image acquisition device (100) includes a plurality of pixels, a capacitive element (1a) that accumulates electric charge corresponding to a dose (X) of radiation, and a read control unit (read element control unit 22, reset element control unit 23) that reads, from at least one pixel (active pixel 10) that is not subjected to initialization in two or more frames, an output (output voltage Vout) corresponding to the electric charge.

Abstract: According to one embodiment, a radiation detector includes a substrate, control lines, data lines, a photoelectric conversion part provided in a region drawn by the control and data lines, and including thin film transistors and photoelectric conversion elements electrically connected to the corresponding control and data lines, a control circuit electrically connected to the control lines, a signal detection circuit electrically connected to the data lines, at least one reference potential part electrically connected to the signal detection circuit, and a determination part electrically connected to the signal detection circuit. The signal detection circuit detects a first current integral value via the data lines and detects a second current integral value from the at least one reference potential part. The determination part determines an incidence start time of a radiation on the basis of a difference between the detected first and second current integral values.

Abstract: Disclosed is a method of using a charged particle microscope for inspecting a sample mounted on a sample holder. The microscope is equipped with a solid state detector for detecting secondary particles emanating from the sample in response to irradiation of the sample with the primary beam, with the solid state detector in direct optical view of the sample. In some embodiments, the sample is mounted on a heater with a fast thermal response time. The method comprises contactless measurement of the temperature of the sample and/or sample holder using the solid state detector.

Abstract: According to one embodiment, a radiation diagnostic apparatus includes an X-ray tube, radiation detecting elements, signal processing substrates, and processing circuitry. The signal processing substrates performs processing including at least A/D conversion processing on outputted signals of the radiation detecting elements and outputs processed signals as the outputted signals subjected to the processing. The processing circuitry identifies a non-observing element or a non-observing substrate based on information on an imaging region included in imaging conditions of an object, the non-observing element being a radiation detecting element of the radiation detecting elements which corresponds to a region other than the imaging region, and the non-observing substrate being a signal processing substrate of the signal processing substrates which corresponds to the non-observing element.

Abstract: An imaging detector module (112) of an imaging system includes at least one detector pixel (114) and self-diagnosing circuitry (116). The self-diagnosing circuitry includes a microprocessor (202) and at least measurement device (210). The microprocessor controls the at least measurement device to measure at least one parameter of the at least one detector pixel, wherein a value of the at least one parameter is indicative of a health state of the imaging system. A method includes employing self-diagnosing circuitry embedded in an imaging detector module to measure at least one parameter of at least one detector pixel of the imaging detector module. A value of the at least one parameter is indicative of a health state of the imaging detector. The method further includes generating, with the self diagnosing circuitry, a signal indicating a health state of the imaging detector module based on the measured at least one parameter.

Abstract: In an X-ray imaging system, first X-ray irradiation and second X-ray irradiation are performed in performing X-ray imaging once. A preview producing circuit subjects first image data outputted from a sensor panel after the first X-ray irradiation is finished to binning processing or thinning processing to produce a preview image. The produced image is transmitted through a communication I/F to a console while the sensor panel performs an accumulation operation in the second X-ray irradiation. The preview image is displayed on a monitor of the console in the second X-ray irradiation.

Abstract: A positron emission tomography (PET) photosensor output circuit configured to be operably coupled to a PET photosensor system is provided that includes a plurality of regional circuit portions and a summing portion. Each regional circuit portion is configured to be operably coupled to a corresponding photosensor system region and includes an input portion, a first branch, and a second branch. The first branch includes a delay unit and a switch. The second branch includes a sensor unit configured to place the switch in a closed position when a signal received via the input portion satisfies a threshold and to place the switch in an open position when the signal received via the input portion does not satisfy the threshold. The summing portion is configured to receive corresponding regional circuit outputs from the regional circuit portions, and to combine the regional circuit outputs to provide a summed output.

Abstract: With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

Abstract: The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate (50) including a plurality of TFTs (10) and a plurality of pixel electrode (20); a photoelectric conversion substrate (62) located to face the active matrix substrate (50); an upper electrode (64) provided on a surface of the photoelectric conversion substrate (62) opposite to the active matrix substrate (50); and a plurality of connection electrodes (72) provided between the active matrix substrate (50) and the photoelectric conversion substrate(62), the plurality of connection electrodes (72) being formed of metal material.

Abstract: An X-ray detector may include a plurality of pixels on a substrate, a first insulating layer configured to cover the plurality of pixels, an electrode block configured to penetrate the first insulating layer and be in contact with the plurality of pixels, a second insulating layer on the electrode block, and a metal wire configured to penetrate the second insulating layer and be in contact with the electrode block. Each of the plurality of pixels may include a first electrode on the substrate, a photoelectronic conversion device on the first electrode, and a second electrode on the photoelectronic conversion device.

Abstract: A radiographic imaging control device is provided with a radiation detector, amplifiers and a controller. A plurality of pixels are arrayed in the radiation detector, each pixel including a sensor portion that generates charges in accordance with irradiated radiation and a switching element that is for reading out the charges generated at the sensor portion. Each amplifier is provided in correspondence with a respective pixel of the radiation detector, is equipped with a resetter that resets charges remaining at an integration capacitor, and amplifies an electronic signal according to the charges read out by the switching element from the corresponding pixel by a pre-specified amplification factor. In accordance with pre-specified conditions, the controller controls so as to alter a bias current supplied to the amplifiers in at least some periods of resetting by the resetter.

Abstract: It is possible to provide a new information recording/reproduction method and a device which can realize a small-size large-capacity memory having a characteristic equivalent to or higher than a hologram memory. The optical information recording/reproduction device includes: recording light generator (51) which generates a recording light (55) in a polarization state having two mutually orthogonal polarization components with a phase difference at an arbitrary polarization base; reproduction light generator (61) which generates a reproduction light (65) in a polarization state having only a single polarization component at a arbitrary polarization basis; recording medium (71) in which optical information is recorded by recording light (55) and the recorded optical information is reproduced by reproduction light; and optical information detector (polarimeter 81) which retrieves information light (72) after being applied to recording medium (71) and detects the light as optical information.

Abstract: With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

Abstract: A pixel includes a conversion element detecting radiation, and a switch between the element and a signal line. A readout unit reads out a signal on the signal line. The readout unit includes a reset unit that resets a potential of the signal line. A period during which the readout unit reads out a signal on the signal line includes a first period during which the signal line is reset, and a signal on the signal line in a state that the switch is not turned on is read out, and a second period during which the signal line is reset, and a signal on the signal line due to the switch being turned on is read out. The processing unit calculates a difference between the signals read out in the second and first periods.

Abstract: A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3?), a semiconductor-layer thin film (4?) and a passivation-shielding-layer thin film (5?) successively; forming a pattern (5?) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a?); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c?) and a drain electrode (4b?). The source electrode (4c?) and the drain electrode (4b?) are disposed on two sides of the active layer (4a?) respectively and in a same layer as the active layer (4a?).

Abstract: An imaging system may include an image sensor having an array of image pixels with a photosensitive region that generates image signals in response to light. The array may include photoluminescent material that absorbs light of a first range of wavelengths and emits light of a second range of wavelengths onto the photosensitive region. The first range of wavelengths may correspond to ultraviolet light, and the second range of wavelengths may correspond to visible light. The photoluminescent material may be formed over some or all of the image pixels. The array may include color filter elements that transmit light of a given color to the photosensitive region. The photoluminescent material may be adjusted to have a peak emission intensity at a color of light that corresponds to the given color of light transmitted by a given color filter element.

Abstract: A radiation imaging apparatus performs radiation image obtaining processing in accordance with an exposure instruction, and obtains a radiation image. Then the radiation imaging apparatus performs offset correction for the obtained radiation image, and displays it. The radiation imaging apparatus determines, in accordance with a predetermined criterion, whether or not offset images obtained by offset image obtaining processing are stable over time. Then, if it is determined that the offset images are not stable, offset correction is performed by using an offset image obtained by performing offset image obtaining processing, following the obtaining of the radiation image. If it is determined that the offset images are stable, the offset correction is performed by using an offset image obtained before the obtaining of the radiation image.

Abstract: An imaging work station (20) includes one or more processors programmed to receive (170) an image depicting a distribution of a radiotracer in a brain or other region of interest. The radiotracer includes at least one of [18F]-Flutemetamol, [18F]-Florbetaben, and [18F]-Florbetapir which highlights amyloid deposits. The image and a template or an MRI image of the region of interest which includes a segmented anatomical feature, such as gray matter, are registered (180) to a common space. A volume representation of the image which depicts the distribution of the radiotracer in the segmented gray matter and suppresses the radiotracer outside of the segmented anatomical feature in white matter is extracted (210).

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

Abstract: Interpolating frames of a video may provide a technique for one or more of frame rate conversion, temporal upsampling for generating slow motion video, image morphing, virtual view synthesis, and/or other video applications. A system may be configured to interpolated frames of a video by leveraging frequency domain representations of individual frames. The frequency domain representations may be decomposed into set of discrete functions that make up the frequency domain representations. Corresponding functions from sets of functions associated with frames with which an interpolated frame is to be determined may be identified. Phase differences between corresponding functions may be determined. Interpolated functions between the corresponding functions may be determined based on the determined phased differences. Information describing spatial domain representations of interpolated frames may be determined based on the interpolated functions.

Abstract: A radiation image-pickup device includes: a plurality of pixels each configured to generate signal charge based on radiation; and a field effect transistor used to read the signal charge from each of the plurality of pixels, wherein the field effect transistor includes a semiconductor layer including an active layer and a low concentration impurity layer formed to be adjacent to the active layer, and a first and a second gate electrode disposed to face each other with the active layer interposed therebetween, and one or both of the first and the second gate electrodes are provided in a region not facing the low concentration impurity layer.

Abstract: A radiation detection device has: a scintillator for converting radiation into fluorescence; a photoelectric conversion unit for converting the fluorescence into an electric signal; and a reset light source unit for exposing reset light to the photoelectric conversion unit. A system control unit has an optical reset disabling unit for, based on a reset disabling instruction, disabling the exposure of the reset light output from the reset light source unit.

Abstract: A radiographic image capture device includes a radiation detector, an application section and a controller. The radiation detector includes plural detection pixels that detect a radiation application state and plural imaging pixels that capture a radiographic image. The application section applies a bias voltage to each of the plural detection pixels and to each of the plural imaging pixels. The controller effects control such that, if the radiation application amount detected by the detection pixels is equal to or greater than a first threshold value during a first state in which the bias voltage is applied to the plural detection pixels, the application section is caused to transition to a second state in which the bias voltage applied to the detection pixels is reduced.

Abstract: A mobile ultrasonic diagnostic device comprising: a battery; an adapter connection detection unit that detects the connection status of an AC adapter that supplies power to each constituent element of the device; and a processing determination unit (determination unit) that determines the processing for each constituent element on the basis of the connection status of the AC adapter. Each constituent element (a processing unit and constituent elements other than the processing unit) are processed on the basis of the processing determined by the processing determination unit (determination unit), and, as a result, the device can be safely used even if there is a possibility that power cannot be supplied from the battery.

Abstract: A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.

Abstract: A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

Abstract: According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.

Abstract: The present invention provides radiation detector, radiographic imaging device and radiographic imaging system that may detect irradiated radiation while maintaining quality of radiographic image. The radiation detector has: pixels having a sensor portion that generates charges in accordance with light converted from irradiated radiation, TFT switch that outputs, to a signal line, charges read-out from the sensor portion, and radiation detection TFT switch that is not connected to a signal line; and radiation detection pixels that have the sensor portion, the TFT switch, and radiation detection TFT switch that is connected to a signal line and that outputs, to the signal line, charges read-out from the sensor portion. The radiation detection TFT switches are connected to radiation detection scan lines, and ON/OFF states are controlled by scan signals that are outputted from a radiation detection control circuit.

Abstract: The present invention provides a radiation detector, a radiographic imaging device, a radiographic imaging system and a line capacitance adjusting method that may suppress image irregularities from occurring in the obtained radiographic images. Namely, the line capacitance difference between each of plural signal lines is reduced by adjusting elements (capacitors) connected to at least one of the plural signal lines.

Abstract: A radiation detection apparatus includes conversion elements including a first electrode, a semiconductor layer, and a second electrode that are divided for each pixel; switching elements electrically connected to the first electrodes; and a first insulating layer that separates the conversion elements of adjacent pixels. The semiconductor layer is located between the first and second electrodes. A periphery of the semiconductor layer is located outside peripheries of the first and second electrodes. The semiconductor layer includes a first impurity semiconductor layer, a second impurity semiconductor layer, and an intrinsic semiconductor layer located between the first and second impurity semiconductor layers. Parameters of the apparatus are defined to set a residual charge 10 ?s after the switching element is turned on to be not higher than 2%.

Abstract: A detector module for a radiation detector in a radiation imaging apparatus is provided. The detector module includes a detecting element array including a plurality of detecting elements arranged in a matrix form in first and second directions orthogonal to each other, the detecting element array configured to allow radiation to penetrate through spaces defined between the detecting elements, an electronic circuit arranged on a radiation emission side of the detecting element array, and a radiation shielding body arranged on a radiation incident side of the detecting element array. The radiation shielding body includes a base material having radiation permeability and formed with a plurality of grooves extending in the first direction at respective positions corresponding to spaces between the detecting elements in the second direction, and a plurality of radiation shielding materials each inserted in a respective groove of the plurality of grooves.

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract: An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer.

Abstract: A thermal imaging camera may be used to capture a visible-light (VL) image and an infrared (IR) image. In some examples, the camera includes a range imaging camera module that captures the VL and an infrared camera module that captures the IR image. In such examples, the VL image may include a plurality of different portions that each correspond to a different portion of the scene and distance-to-target data associated with each of the different portions of the scene. The camera may align each of the plurality of different portions of the VL image based on the distance-to-target data associated with corresponding portions of the scene so as to correct a parallax error between the VL image and the IR image. The camera may then concurrently display the VL image in alignment with the IR image.

Abstract: An X-ray detection device includes an X-ray detection panel having a plurality of gate-lines, a plurality of data-lines, a plurality of bias-lines, a plurality of pixel circuits, a gate driving circuit that sequentially provides a gate signal to the pixel circuits via the gate-lines when an X-ray detecting operation is performed, a readout integrated circuit that performs a readout operation of a detection signal that is output from the pixel circuits via the data-lines when the X-ray detecting operation is performed, a bias driving circuit that provides a forward-bias voltage or a reverse-bias voltage to the pixel circuits via the bias-lines, and an operation control circuit that controls a forward-biasing operation and an initializing operation to be simultaneously performed on the pixel circuits.

Abstract: A radiation imaging apparatus, comprising a sensor array in which a plurality of sensors configured to output signals corresponding to irradiated radiation, a detection unit configured to detect radiation, a driving unit configured to drive the sensor array, so as to initialize the plurality of sensors for each row repeatedly at least until the detection unit detects irradiation of radiation and to read out signals from the plurality of sensors for each row sequentially, and a processing unit configured to process signals from the sensor array, so as to correct a signal from the sensor on a row, of the plurality of sensors, which has been initialized during the irradiation of radiation, based on a timing of the initialization.

Abstract: Photomultipliers are disclosed which comprise circuitry for detecting photo electric events and generating short digital pulses in response. In one embodiment, the photomultipliers comprise solid state photomultipliers having an array of microcells. The microcells, in one embodiment, in response to incident photons, generate a digital pulse signal having a duration of about 2 ns or less.

Abstract: An X-ray detector and a heat dissipating method are provided. The heat dissipating method comprises providing an optical sensing panel over an internal support of the X-ray detector and providing a digital printed circuit board directly on a back cover, so that there is a gap between the digital printed circuit board and the optical sensing panel that is fixed by the internal support. The X-ray detector comprises an optical sensing panel bonded to the outer side of an internal support; and a digital printed circuit board bonded to the inner side of a back cover, wherein there is a gap between the digital printed circuit board and the optical sensing panel that is fixed by the internal support.

Abstract: A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

Abstract: An X-ray matrix imager is configured to operate based on a multiple-gate-line driving scheme and a shared-data-line driving scheme. The X-ray matrix imager includes a matrix with multiple pixels, multiple gate line sets, multiple data lines, multiple gate drivers, multiple row multiplexers, and multiple pull-down units. Each gate line sets includes a first gate line coupled to a first pixel and a second gate line coupled to a second pixel adjacent to the first pixel. Each data line is coupled to the multiple gate line sets for receiving charges accumulated on the pixels. Each row multiplexer is configured to selectively couple a corresponding gate driver to the first gate line or the second gate line in a corresponding gate line set. Each pull-down unit is configured to couple the first gate line to a constant voltage when the first gate line is not coupled to the corresponding gate driver.

Abstract: Systems and methods for braking and releasing one or more pivot joints used in an X-ray positioning device are described. The systems and methods use a support arm that extends between a main assembly of the x-ray positioning device and an X-ray imaging assembly with an X-ray source and an X-ray detector that are disposed nearly opposite to each other. The support arm includes one or more pivot joints (such as horizontal, lateral, and/or orbital pivot joints) that allow the imaging assembly to move with respect to the main assembly. The pivot joints can each be connected to an automated braking system that is capable of selectively locking and unlocking a corresponding pivot joint, as indicated by a user-controlled switching mechanism. The braking systems containing multiple pivot joints can be individually controlled by separate switching mechanisms or simultaneously controlled by a single switching mechanism. Other embodiments are described.

Abstract: A radiological image detection apparatus includes: a lock mechanism including at least one first lock mechanism and at least one second lock mechanism, each including a coupling member moving between a coupling position at which the lock mechanism is coupled to a battery and a non-coupling position, the coupling member being installed with a manipulation part exposed to an outer surface of a portion of a case in which a battery accommodating part is installed, and the first lock mechanism setting a first direction of a movement direction of the corresponding coupling member from the coupling position to the non-coupling position and the second lock mechanism setting a second direction of a movement direction of the corresponding coupling member from the coupling position to the non-coupling position, being different from the first direction.

Abstract: Digital images or the charge from pixels in light sensitive semiconductor based imagers may be used to detect gamma rays and energetic particles emitted by radioactive materials. Methods may be used to identify pixel-scale artifacts introduced into digital images and video images by high energy gamma rays. Statistical tests and other comparisons on the artifacts in the images or pixels may be used to prevent false-positive detection of gamma rays. The sensitivity of the system may be used to detect radiological material at distances in excess of 50 meters. Advanced processing techniques allow for gradient searches to more accurately determine the source's location, while other acts may be used to identify the specific isotope. Coordination of different imagers and network alerts permit the system to separate non-radioactive objects from radioactive objects.

Abstract: First TFTs are provided in correspondence with respective intersection portions between plural signal lines and plural first scan lines. Control terminals of the first TFTs are connected to the corresponding first scan lines, and output terminals of the first TFTs are connected to the corresponding signal lines. Sensors are connected to input terminals of the first TFTs. Second TFTs include input terminals that are connected to respective sensors and control terminals that are connected to second scan lines. Output terminals of second TFTs whose input terminals are connected to a plural number of the sensors, which sensors are adjacent in a first direction and a second direction, are connected to the same signal line. A plural number of the second scan lines that are provided with driving signals that are identical or the same are electrically connected to one another by a redundant line.

Abstract: A phase retrieval method for differential phase contrast imaging includes receiving data corresponding to a differential phase image generated from a measured signal. The measured signal corresponds to an X-ray signal detected by a detector after passing through a subject located with a grating arrangement between an X-ray source and the detector. The method further includes generating a phase image corresponding to the integration of the differential phase image. Generating the phase image includes performing an iterative total variation regularized integration in the Fourier domain.