Abstract: A radiation detector has a plurality of semiconductor cells arranged in a matrix. Each of the plurality of semiconductor cells detects radiation separately, and outputs a signal representing the energy of radiation separately. A selection circuit selects, among events wherein radiation is detected, specific events wherein radiation derived from radio-isotope injected to a subject is detected. In the first case wherein either one semiconductor cell outputs a signal, the energy of the signal is compared with a predetermined energy window. In the second case wherein two or more semiconductor cells output two or more signals substantially simultaneously, the total energy of the two or more signals is compared with the predetermined energy window. A position calculation circuit calculates, in the first case the incidence position of the radiation based on the positions of the semiconductor cells that output signals.

Abstract: Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body (10) of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (10); and a counterelectrode arrangement (30) which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement (30) comprises a two-dimensional main electrode (31) and at least one barrier electrode (32) which are electrically insulated from each other, and wherein the barrier electrode (32), of which there is at least one, is connected to a voltage source (50) and is designed such that a blocking voltage is applied to it relative to the semiconductor body (10), with said blocking voltage exce

Abstract: The described embodiments of the present invention include a method for forming a radiation detector. A radiation absorption layer is formed on a substrate. A wider bandgap layer is formed on the radiation absorption layer. A passivation layer is formed on the wider bandgap layer. A doping layer is formed on the passivation layer. The doping layer is then patterned and dopant is driven from the patterned doping layer into the junction layer and the radiation absorption layer to form a doped region. The passivation layer is patterned to expose the doped region and an electrical contact to the doped region is formed.

Abstract: An image sensor has a three-dimensional structure in which a sensor element array having a plurality of sensor elements consisting of CdTe, arranged in a two-dimensional matrix, is mounted to an IC substrate via a connection layer. The connection layer has a plurality of stud bumps and a plurality of thin film layers. The stud bumps are formed on an electrode of each IC and are provided in the connection layer in order to fetch a signal detected by each sensor element. The thin film layers are formed at the distal end of each stud bump, and are electrically connected with an electrode of each sensor element.

Abstract: A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.

Abstract: In order to provide a radiation detector capable of implementing measurements with a good energy resolution and a high detection efficiency over a broad energy range using a single detector, in the present invention, a radiation detecting element composed of Si semiconductor and the radiation detecting element composed of CdZnTe or CdTe semiconductor are lined up as two layers longitudinally. The radiation detecting element composed of Si semiconductor is taken as a first layer at the side of incidence of the radiation and the radiation detecting element composed of CdZnTe or CdTe semiconductor is taken as a second layer.

Abstract: An image sensor has a three-dimensional structure in which a sensor element array having a plurality of sensor elements consisting of CdTe, arranged in a two-dimensional matrix, is mounted to an IC substrate via a connection layer. The connection layer has a plurality of stud bumps and a plurality of thin film layers. The stud bumps are formed on an electrode of each IC and are provided in the connection layer in order to fetch a signal detected by each sensor element. The thin film layers are formed at the distal end of each stud bump, and are electrically connected with an electrode of each sensor element.

Abstract: A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.

Abstract: A two-dimensional, pixellated, monolithic semiconductor radiation detector, in which each detector pixel is essentially a perpendicular mode detector. This is achieved by an arrangement of anode spots, one for each pixel located on the flux-exposed front surface of the detector substrate, surrounding by a cathode array preferably in the form of a network of lines, such that the field between the anodes and cathodes on this front surface has a major component in the direction parallel to the surface, and hence perpendicular to the incident photon flux. The conductivity of the substrate is high near this front surface, since this is where the highest level of absorption of photons takes place, and a significant photoconductive current is thus generated between cathodes and anodes. The conductivity is proportional to the incoming photon flux, and decays exponentially with depth into the detector.

Abstract: A radiation source distribution image of an examinee is formed by driving X direction movement motors to move a radiation information-detecting unit in the X direction, and detecting radiation from the examinee on a stretcher placed between guide rails by using a collimator and a line sensor which constitute a detection unit.

Abstract: An x-ray and gamma-ray radiant energy imaging device is disclosed having a temperature sensitive semiconductor detector substrate bump-bonded to a semiconductor CMOS readout substrate. The temperature sensitive, semiconductor detector substrate utilizes Tellurium compound materials, such as CdTe and CdZnTe. The bump bonds are formed of a low-temperature, lead-free binary solder alloy having a melting point between about 100° C. and about 180° C. Also described is a process for forming solder bumps utilizing the low-temperature, lead-free binary solder alloy, to prevent damage to temperature sensitive and potentially brittle detector substrate when assembling the imaging device.

Abstract: A semiconductor radiation detection crystal converts incident radiation or an incident particle into an electrical signal. A first substrate for conveying the electrical signal to processing electronics is bonded to the crystal via an anisotropic conductive material sandwiched therebetween. The crystal can include can array of pixels which are positioned in opposition with an array of conductive pads formed on the first substrate. The anisotropic conductive material forms between each pixel and its corresponding conductive pad an electrical path, with each electrical path isolated from other electrical paths.

Abstract: An X-ray imaging module having a multilayer ionizing radiation sensitive element operative to convert spatially modulated impinging X-ray radiation to a spatially modulated charge distribution. The multilayer ionizing radiation sensitive element has a substrate, a conductive layer overlying the substrate, an ionizing radiation sensitive layer overlying the conductive layer which converts ionizing radiation impinging thereon to charge carriers, and a blocking layer exposed to ionizing radiation and optical radiation, overlying the ionizing radiation sensitive layer. The blocking layer generally limits the passage of charges, of at least one polarity, therethrough and blocks optical radiation, of at least one spectral band, from penetrating therethrough, while permitting passage therethrough of ionizing radiation.

Abstract: An X-ray flat panel detector includes an X-ray photosensitive film which generates signal charges upon being exposed to incident X-rays, pixel electrodes which are arrayed in contact with the X-ray photosensitive film, a bias voltage application unit which applies a bias voltage to the X-ray photosensitive film so as to make the pixel electrodes collect holes or electrons, which serve as the signal charges generated by the X-ray photosensitive film and have a higher mobility, capacitors which are arranged in correspondence with the pixel electrodes and store the charges generated by the X-ray photosensitive film, switching thin-film transistors which are arranged in correspondence with the pixel electrodes and read the charges in the capacitors, scanning lines which supply a control signal to OPEN/CLOSE-control the switching thin-film transistors, and signal lines which are connected to the switching thin-film transistors to read the charges when the switching thin-film transistors are opened.

Abstract: An industrial or medical radiation detector and a radiation imaging device equipped with the radiation detector are presented. The device improves the detection properties and production efficiency of the radiation detectors. The device includes a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.

Abstract: After the position of a collimator with respect to a gamma camera depending on the position of a detection plane in an examinee, gamma rays radiated from the examinee are detected by a scintillation detector via a collimator and a scintillator, and a signal from the scintillation detector is processed by a signal processing circuit and then transferred to an image reconstructing unit, which reconstructs a three-dimensional image of the radiation source in the examinee and displays the three-dimensional image on a display unit.

Abstract: A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described.

Abstract: A handheld CZT radiation detector having a CZT gamma-ray sensor, a multichannel analyzer, a fuzzy-logic component, and a display component is disclosed. The CZT gamma-ray sensor may be a coplanar grid CZT gamma-ray sensor, which provides high-quality gamma-ray analysis at a wide range of operating temperatures. The multichannel analyzer categorizes pulses produce by the CZT gamma-ray sensor into channels (discrete energy levels), resulting in pulse height data. The fuzzy-logic component analyzes the pulse height data and produces a ranked listing of radioisotopes. The fuzzy-logic component is flexible and well-suited to in-field analysis of radioisotopes. The display component may be a personal data assistant, which provides a user-friendly method of interacting with the detector. In addition, the radiation detector may be equipped with a neutron sensor to provide an enhanced mechanism of sensing radioactive materials.

Abstract: An imaging system having at least one microsystem array that is made using a wide bandgap semiconductor and configured in a pixel arrangement. The imaging system also including an electronic readout arrangement integrated with the at least one microsystem array.

Abstract: A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.

Abstract: A method and system for measuring neutron emissions and ionizing radiation, such as gamma emissions, solid state detector for use therein, and imaging system and array of such detectors for use therein are provided using Cd- and/or Hg-containing semiconductors or B-based, Li-based or Gd-based semiconductors. The resulting systems and detectors used therein may be not only compact and portable, but also capable of operating at room temperature. The detectors may also be operable as gamma ray spectrometers.

Abstract: An electromagnetic wave detecting device which includes a semiconductor film that generates a charge upon induction by an electromagnetic wave, and an active matrix array for reading out the charge generated in the semiconductor film, detects the electromagnetic wave by a direct converting system. The electromagnetic wave detecting device has a characteristic that the active matrix array is formed by having a resin substrate as its base. Since resin has a less weight and a superior impact resistance than glass, it makes an active matrix substrate difficult to break, while improving portability and mobility.

Abstract: A solid state gamma camera module and integrated thermal management method thereof includes a printed circuit board having a first thermal layer and a second thermal layer. The first thermal layer is thermally and/or electrically bonded to the second thermal layer. A semiconductor detector module having the temperature sensitive material electrically communicates with the second thermal layer. A plurality of the integrated circuits each having a bottom metal layer and wire bonds are electrically connected to the first thermal layer. A cover is electrically and thermally bonded to the first thermal layer and covers the plurality of integrated circuits. The first thermal layer extracts heat from the integrated circuits by direct interface to the bottom metal layer (or the second thermal layer), and the second thermal layer extracts heat from an integrated circuit (IC) interconnect. The IC interconnect can be through a wire bond, die bond, direct solder flip chip attachment or the like.

Abstract: At a face of a silicon semiconductor substrate tilted about one degree from a [100] orientation, a readout integrated circuit (ROIC) is implemented, specially designed and fabricated for direct epitaxial growth. Layers of II-VI semiconductor material, preferably including layers of HgCdTe of different bandgaps, are successively and monolithically grown on the face by molecular beam epitaxy (MBE) within a window masking the face and then patterned and wet-etched to create mesas of two-color detector elements in an array. Preferably a beginning buffer layer of CdTe is grown to minimize crystalline mismatch between the Si and the HgCdTe. Sloped sidewalls of the mesas ensure good step coverage of the conductive interconnects from the detector elements to the ROIC.

Abstract: In order to provide a radiation detector capable of implementing measurements with a good energy resolution and a high detection efficiency over a broad energy range using a single detector, in the present invention, a radiation detecting element composed of Si semiconductor and the radiation detecting element composed of CdZnTe or CdTe semiconductor are lined up as two layers longitudinally. The radiation detecting element composed of Si semiconductor is taken as a first layer at the side of incidence of the radiation and the radiation detecting element composed of CdZnTe or CdTe semiconductor is taken as a second layer.

Abstract: A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water after attaching electrical contacts to the crystal surface.

Abstract: A method for improving CdZnTe-based gamma-ray detectors is presented. A CdZnTe detector/crystal is exposed to acoustic waves. After exposure to acoustic waves, the CdZnTe gamma-detector gains higher resistivity and exhibits better spectral resolution and greater sensitivity. Further, when a batch of detectors is made according to the method of the present invention, the properties of the crystals are more homogenous, allowing for cheaper and more standardized detectors.

Abstract: A small-size gamma camera is capable of reliably and quickly detecting the accumulated position of a radiation source in an examinee. When the examinee is scanned with the gamma camera which has an area sensor comprising 256 (16×16) semiconductor detecting elements, display elements of a display unit on a rear panel of the gamma camera are turned on to display a pattern indicative of the accumulated position of the radiation source. According to the displayed pattern on the display elements, the operator of the gamma camera moves the gamma camera to detect the accumulated position of the radiation source reliably within a short period of time.

Abstract: An x-ray and gamma-ray radiant energy imaging device is disclosed having a temperature sensitive semiconductor detector substrate bump-bonded to a semiconductor CMOS readout substrate. The temperature sensitive, semiconductor detector substrate utilizes Tellurium compound materials, such as CdTe and CdZnTe. The bump bonds are formed of a low-temperature, lead-free binary solder alloy having a melting point between about 100° C. and about 180° C. Also described is a process for forming solder bumps utilizing the low-temperature, lead-free binary solder alloy, to prevent damage to temperature sensitive and potentially brittle detector substrate when assembling the imaging device.

Abstract: A radiation source distribution image of an examinee is formed by driving X direction movement motors to move a radiation information-detecting unit in the X direction, and detecting radiation from the examinee on a stretcher placed between guide rails by using a collimator and a line sensor which constitute a detection unit.

Abstract: A subject (10) is disposed adjacent a detector array (18) for the purposes of nuclear imaging. The subject (10) is injected with a radioactive isotope (14) and &ggr;-ray emissions indicative of nuclear decay are detected at the detector array (18). P-ASIC (60) preamplifier circuits are complex low-noise integrated circuits which dissipate a considerable amount of power (300-500 mW each). These components account for most of the dissipated power on the daughter cards (62). In order to facilitate the cooling of these electrical components, they are mounted on circuit boards (62) that are arranged parallel to each other extending perpendicularly away from the detector array (18). This provides channels between the boards through which cooling air is drawn by an array of fans (84).

Abstract: An infrared sensing device including a multi-layer II-VI semiconductor material grown by molecular beam epitaxy on a readout circuit fabricated on silicon substrate having a orientation one degree tilted from the (100) direction is provided in this invention. A method to grow single crystalline mercury cadmium telluride multi-layer structure on custom-designed readout circuit (ROIC) is provided. Due to the height difference of more than 15 micron between the two planes containing the detector output gates and the ROIC signal input gates, a mesa with at least one sloped side is fabricated and the interconnecting metal electrodes running on them to connect the detector output to ROIC input. Planar photovoltaic junctions are fabricated selectively on the II-VI mesa structure formed on ROIC. At least one infrared detecting cell being formed in the mesa, with a conductor interconnect layer connecting the detection cell to the readout integrated circuit.

Abstract: The present invention provides a method for discriminating between detected radiation events, so that the sensitivity of the radiation detector may be preserved without causing the inclusion of a large number of the undesired radiation events. This method includes the steps of: (1) empirically determining the energy response function of the radiation detector; and (2) then using the energy response function during the actual detection process to differentiate between the desired and undesired radiation events. Generally, the energy response function for each of the detectors is determined by simulating the condition for the subsequent, actual measurement. During this process, the detector is illuminated with a uniform stream of radiation to be measured. The detector should be exposed to a large number of radiation rays, and the number of undesired rays is minimized. For example, the detector will be exposed to only direct, unscattered radiation.

Abstract: The present invention relates to a process and installation for simultaneously measuring the flux of ionizing radiation, of an energy greater than several kVe and the dose of radiation received by a body exposed to this radiation.

Abstract: A two-dimensional, pixellated, monolithic semiconductor radiation detector, in which each detector pixel is essentially a perpendicular mode detector. This is achieved by an arrangement of anode spots, one for each pixel located on the flux-exposed front surface of the detector substrate, surrounding by a cathode array preferably in the form of a network of lines, such that the field between the anodes and cathodes on this front surface has a major component in the direction parallel to the surface, and hence perpendicular to the incident photon flux. The conductivity of the substrate is high near this front surface, since this is where the highest level of absorption of photons takes place, and a significant photoconductive current is thus generated between cathodes and anodes. The conductivity is proportional to the incoming photon flux, and decays exponentially with depth into the detector.

Abstract: The described embodiments of the present invention include a method for forming a radiation detector, including the steps of: forming a radiation absorption layer on a substrate; forming a wider bandgap layer on the radiation absorption layer; forming a passivation layer on the wider bandgap layer; forming a doping layer on the passivation layer; patterning the doping layer; driving dopant from the patterned doping layer into the junction layer and the radiation absorption layer to form a doped region; patterning the passivation layer to expose the doped region; and forming an electrical contact to the doped region.

Abstract: A device for determining the photon energy E1 and direction cone angle of incident gamma ray includes a radiation detector for receiving an incident gamma ray having an unknown photon energy E1 and an unknown direction and for scattering the gamma ray with two Compton scattering interactions and a subsequent scattering or absorption interaction. The detector provides three outputs, each output corresponding to one of the Compton scattering and the subsequent scattering or absorption interactions, to a processor, which is programmed to calculate the photon energy E1 and direction cone angle of the incident gamma ray based on these outputs.

Abstract: A radiation detecting apparatus having an enlarged detection area and improved radiation detecting sensitivity includes a semiconductor layer formed of an n-type amorphous or polycrystal semiconductor of high specific resistance, with a &mgr;&tgr; product (mobility×mean life) of holes being larger than a &mgr;&tgr; product of electrons. The semiconductor layer has a surface electrode formed on one surface thereof to which a negative bias voltage is applied, and a carrier collection electrode formed on the other surface. The semiconductor layer provides an electronic injection inhibiting structure on the surface electrode side thereof, and a hole injection permitting structure on the carrier collection electrode side. In time of detecting radiation, electrons which are majority carriers are not injected from the surface electrode side into the semiconductor layer, while holes which are minority carriers are injected from the carrier collection electrode side.

Abstract: In a radiation detector, a polycrystalline film is formed by a closed spaced sublimation using a sintered material of at least one of a CdTe and CdZnTe powder. The CdTe or CdZnTe film has a thickness sufficient to catch radiation and a large area corresponding to a size of a supporting base plate, which can be obtained in a short time. Thus, a radiation detector and a radiation image taking device having a large area can be obtained.

Abstract: A subject (10) is disposed adjacent a detector array (18). The subject (10) is injected with a radioactive isotope (14) and &ggr;-ray emissions indicative of nuclear decay are detected at the detector array (18). The detector array generates electrical signals in response to each &ggr;-ray which signals are processed (64) and reconstructed (46) into an image representation of the anatomy of the subject (10). A high voltage bias is applied across the detector array. The bias is applied by a set of bias strips (80) and an electrically isolated common busbar (82) built onto a sheet of flexible circuit material. This flexible circuit (81) is highly transmissive to gamma radiation in the energy range 60-180 keV which is typically used in diagnostic nuclear medicine. Connections between the common busbar (82) and the bias strips (80) are made by resistors (92) on individual detector cards.

Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.7Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

Abstract: A subject (10) is disposed adjacent a detector array (18) of a nuclear camera. The subject (10) is injected with a radioactive isotope (14) and &ggr;-ray emissions indicative of nuclear decay are detected at the detector array (18). Individual detectors (22) are monitored in groups of 64. When one of them detects a nuclear event, it produces an electrical spike that is filtered into a Gaussian with about a 1.2 &mgr;sec peaking time. A 10 bit analog to digital converter (44) 10 repeatedly digitizes the amplitude of the Gaussian pulse, e.g. at a 20 MHz clock rate. The 10 bit digitized pulse amplitudes are monitored by a 10 bit comparitor (46), which monitors consecutive values of the digitized signal, looking for the peak value, e.g. for the amplitude to stop rising. When the peak is detected, the most recent four digital pulse amplitudes contiguous to the peak are summed in a 12 bit accumulator (106) to generate a 12 bit peak amplitude value.

Abstract: A two-color photodetector for detecting two different bands of infrared radiation is described. The photodetector includes either a diffractive resonant optical cavity that resonates at the two colors of interest, or a diffractive resonant optical cavity that resonates at the first color and a vertical resonant optical cavity that resonates at the second color. By placing materials that absorb only one of the two colors at the appropriate locations within the resonate structure, the resultant signals include little cross-talk due to the opposite color. The two-color photodetector finds use in applications covering a wide portion of the infrared spectrum.

Abstract: A radiation detector includes a slit collimator. A radiation detector receives radiation which has been received in each of the slits. The aspect ratio of the detector is approximately three, and each semiconductor radiation detector has a transverse dimension which is less than that of its respective slit. A reconstruction processor generates an image indicative of the radiation received by the detectors. The detector may be rotated about a fixed axis. Alternately, the detector may be translated in coordination with its rotation to provide a substantially square field of view.

Abstract: A small-size gamma camera is capable of reliably and quickly detecting the accumulated position of a radiation source in an examinee. When the examinee is scanned with the gamma camera which has an area sensor comprising 256 (16×16) semiconductor detecting elements, display elements of a display unit on a rear panel of the gamma camera are turned on to display a pattern indicative of the accumulated position of the radiation source. According to the displayed pattern on the display elements, the operator of the gamma camera moves the gamma camera to detect the accumulated position of the radiation source reliably within a short period of time.

Abstract: An active-matrix substrate 10a includes electrode wires having gate electrodes 2 and data electrodes 3 arranged in a lattice form, thin-film transistors 4 provided respectively at intersections of the lattice form, a pixel electrode 11 connected to the data electrode 3 via the thin-film transistor 4, and a storage capacitor 5 connected to the pixel electrode 11. A connecting electrode 13 having a long length is provided for readily cutting by laser on a part of an electrode for connecting the data electrode 3 and the pixel electrode 11. With this arrangement, it is possible to provide the active-matrix substrate being able to readily suppress leakage of unnecessary electrical charge from a pixel defect, which may cause a line defect.

Abstract: A semiconductor base device for the detection of gamma radiation. The semiconductor base device includes a semiconductor base detector with a resistivity exceeding 109 &OHgr;·cm. An operational amplifier is located directly at the detector output, without a decoupling capacitor between the detector and the preamplifier. A data processing device makes use of the rise time of the electronic component of a signal output by the detector.

Abstract: A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11,12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.

Abstract: A method for simultaneous transmission x-ray computed tomography (CT) and single photon emission tomography (SPECT) comprises the steps of: injecting a subject with a tracer compound tagged with a &ggr;-ray emitting nuclide; directing an x-ray source toward the subject; rotating the x-ray source around the subject; emitting x-rays during the rotating step; rotating a cadmium zinc telluride (CZT) two-sided detector on an opposite side of the subject from the source; simultaneously detecting the position and energy of each pulsed x-ray and each emitted &ggr;-ray captured by the CZT detector; recording data for each position and each energy of each the captured x-ray and &ggr;-ray; and, creating CT and SPECT images from the recorded data. The transmitted energy levels of the x-rays lower are biased lower than energy levels of the &ggr;-rays. The x-ray source is operated in a continuous mode. The method can be implemented at ambient temperatures.

Abstract: A two-dimensional image detecting device is provided with an active-matrix substrate including electrode wires, switching elements, and pixel electrodes; and an opposing substrate including electrode sections and a semiconductive layer. The substrates are disposed such that pixel electrodes and a semiconductive layer oppose each other, and are electrically connected with each other via a conductive material. Projecting electrodes are formed in accordance with the pixel electrodes on a connecting surface of at least one of the active-matrix substrate and the opposing substrate. An exterior wall is formed by a sealing material at an edge of the connecting surface so as to shut off a space between the substrates.