Abstract: The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114).

Abstract: Provided are an electron detection device and a scanning electron microscope. The electron detection device includes: a reflective energy analyzer including first and second control electrodes that are sequentially arranged in an incidence direction of an electron beam; a first detector disposed at a side of the second control electrode away from the first control electrode; a second detector disposed at a side of the first control electrode away from the second control electrode; and a conductive shielding tube penetrating the first and second control electrodes in the incidence direction and configured to shield an electric field generated by the reflective energy analyzer, allowing the electron beam to pass through and be incident on the target sample. First control electrode is configured to generate a first electric field between the first and second control electrodes. The first electric field is configured to guide the secondary electron to the first detector.

Abstract: A electron beam irradiation apparatus 1 includes a helping column determination unit 11 that determines, as a helping column, a column having a main irradiation area that is not included in a target irradiation area to be irradiated with an electron beam from among a plurality of columns 2 when information on the target irradiation area is input, and a helped column determination unit 12 that determines, as a helped column for the determined helping column, a column that is adjacent to the helping column and has a main irradiation area included in the target irradiation area from among the plurality of columns 2. A beam scanner 5 of the helping column performs a helping irradiation control for performing electron beam irradiation in the sub-irradiation area of the helping column, thereby irradiating the target irradiation area of the helped column with an electron beam.

Abstract: A method for measuring an electron signal or an electron induced signal may be provided. The method may include providing a threshold number of events or a threshold event rate for a pixel on a detector. The method may include collecting from the detector the threshold number of events or determining that the threshold event rate is achieved, wherein a signal at the detector is an electron signal or an electron induced signal from a sample. The method may include modulating an intensity of an electron source directed to the sample in response.

Abstract: Provided is a charged particle beam device capable of detecting signal charged particles in a wide range of elevation angles from a large elevation angle to a small elevation angle and distinguishing detection signals between backscattered charged particles and secondary charged particles regardless of distribution of the signal charged particles. The charged particle beam device according to the disclosure includes a first detector that detects the secondary charged particles or the backscattered charged particles and a second detector that detects tertiary charged particles generated from the first detector, and generates an observation image of a sample using a signal value obtained by subtracting at least a part of a second detection signal output by the second detector from a first detection signal output by the first detector, or subtracting at least a part of the first detection signal from the second detection signal.

Abstract: Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

Abstract: Methods and systems for acquiring transmission electron microscope video data on a rolling-shutter detector at an enhanced frame rate and without temporal distortions are described. Also described are methods to enhance the dynamic range of image and diffraction data acquired using a transmission electron microscope. The disclosed methods and systems may also be applicable to photon detection and imaging systems.

Abstract: A device configured to convert or amplify a particle, the conversion or amplification being reliant on the impact of a particle on a surface of the device causing emission of one or more secondary electrons from the same surface. The device includes a carbon-based layer capable of secondary electron emission upon impact of a particle. The surface may be used to convert, for example, an ion into an electron signal, or an electron signal into an amplified electron signal, such as in conversion or amplification dynodes.

Abstract: A high-voltage power supply system for a mass spectrometer comprises a ground-referenced power supply with a first transformer having a primary winding and a secondary winding, the primary winding is electrically coupled to a first source of AC power, and a floated bias voltage power supply with a second transformer having a primary winding and a secondary winding, the primary winding of the second transformer is electrically coupled to a second source of AC power. A return electrical path of the floated bias voltage power supply is electrically coupled to the ground-referenced power supply to bias an output voltage of the ground-referenced power supply. A floating shield is around the floating bias voltage power supply, and at least one resistive element is in the return electrical path of the floated bias voltage power supply to reduce noise coupled from the floated bias voltage power supply to the ground-referenced power supply.

Abstract: A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

Abstract: The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Abstract: One or more computing devices, systems, and/or methods are provided. Event information associated with a plurality of events may be identified. The plurality of events may be associated with first entities corresponding to a first entity type and second entities associated with a second entity type. A first network profile associated with the first entities and the second entities may be generated based upon the event information. An arrangement of particles corresponding to the first entities and the second entities may be generated. Charges associated with the particles may be determined based upon the first network profile. The particles may be rearranged to a second arrangement of particles based upon the charges. One or more clusters of particles in the second arrangement of particles may be identified. One or more coalition networks associated with fraudulent activity may be identified based upon the one or more clusters of particles.

Abstract: Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.

Abstract: A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.

Abstract: Provided is a technique for accurately determining a performance of a single detector that detects ions having passed through a mass analysis unit. A mass analysis system according to the present disclosure includes, in a mass analysis device, a first converter configured to calculate a first measured value based on an intensity and an area of a pulse in an electric signal output from the detector configured to detect the ions having passed through the mass analysis unit, a second converter configured to obtain a second measured value by counting the number of pulses of the electric signal, a calculation unit configured to calculate an A/P ratio indicating a ratio of the first measured value to the second measured value, a determination unit configured to determine a performance of the detector based on a value of the A/P ratio, and a control unit configured to control at least an output of a determination result obtained by the determination unit.

Abstract: An electron detector comprises a sensor module comprising a sensor for detecting electrons, and an electronics module comprising circuitry for processing signals received from the sensor module. Wiring is provided for electrically connecting the sensor module to the electronics module. An adaptor is arranged between the sensor module and the electronics module. The adaptor comprises a passage for the wiring, and shielding elements for shielding from radiation.

Abstract: The invention relates to a detector of charged particles made of silicon carbide and capable of performing dosimetric measurements in the field of quality controls of the beam lines at proton-therapy centres. With such detector it is further possible to perform measurements on beams of high- intensity charged particles produced by laser-matter interaction.

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

Abstract: A dual-mode ion detector for a mass and/or ion mobility spectrometer comprising a first conversion electrode (20) that is maintained, in use, at a negative potential and arranged for converting incident positive ions (32) into secondary electrons (34), and a second conversion electrode (22) that is maintained, in use, at a positive potential and arranged for converting incident negative ions (42) into secondary positive ions (44) and/or secondary electrons (74). The detector also comprises an electron detecting surface (26) and an entrance electrode (24) for drawing ions into the ion detector. The ion detector is switchable between a first mode for detecting positive ions and a second mode for detecting negative ions.

Abstract: The present disclosure describes an image forming element having a semiconductor chip with micro-electro-mechanical-system (MEMS) devices and voltage generators, each voltage generator being configured to generate a voltage used by one or more of the MEMS devices. A floating ground may be used to add a voltage to the voltage generated by the voltage generators. The semiconductor chip may include electrical connections, where each voltage generator is configured to provide the voltage to the one or more MEMS devices through the electrical connections. The MEMS devices may define a boundary in the semiconductor chip within which the MEMS devices, the voltage generators, and the electrical connections are located. Each MEMS device may generate an electrostatic field to manipulate an electron beamlet of a multi-beam charged particle microscope. The MEMS devices may be organized into groups based on a distance to a reference location (e.g., optical axis) in the semiconductor chip.

Abstract: A beam adjustment method includes: installing, on an irradiation surface to which an electron beam is radiated, a detection part having a Faraday cup catching electrical charges of the electron beam, and installing, on a side of an electron gun further than the detection part, a shielding plate having opening holes through which the electron beam is passable. The method includes causing, upon performing beam diameter measurement processing, the electron beam to pass through the opening holes, and radiating the electron beam to the Faraday cup. In addition, the method includes radiating, upon performing normal processing, the electron beam to the shielding plate.

Abstract: In one embodiment, a charged particle beam writing apparatus includes a positioning deflector adjusting an irradiation position of a charged particle beam radiated to a substrate which is a writing target, a fixed deflector which is disposed downstream of the positioning deflector in a traveling direction of the charged particle beam, and in which an amount of deflection is fixed, a focus correction lens performing focus correction on the charged particle beam according to a surface height of the substrate, and an object lens focusing the charged particle beam.

Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

Abstract: A method includes determining a first amount of equivalent melanopic lux (EML) based on an actual time of day or an intended time of day, providing, via one or more sources, light configured to emit a first set of spectra that causes the first amount of EML and providing a light guide configured to receive and reflect the light toward an electronic paper (e-paper) display, the light guide being in front of the e-paper display in relation to the reader.

Abstract: A detection device for detecting charges particles. The active area of the detector extends along a principal direction over several centimeters and up to 1 meter or more. This allows for its use as a focal plane detector for a mass spectrometer device, allowing to record all mass-to-charge ratios provided by the spectrometer in parallel and within a reduced acquisition time.

Abstract: Components of scientific analytical equipment, such as electron multipliers and modifications thereto, for extending the operational lifetime or otherwise improving performance by way of improved construction. A detector includes one or more electron emissive surfaces and one or more detector elements configured to define on one side an environment internal the detector and on the other side an environment external the detector. The one or more detector elements are configured to inhibit or prevent flow of a gas from the environment external the detector to the environment internal the detector. Such detectors may be used in a mass spectrometry instrument, for example.

Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Abstract: Examples of the present disclosure relate to a particle beam dose profile measurement apparatus comprising a particle detector stack comprising a plurality of scintillator layers. Each scintillator layer of the detector stack is disposed along an axis of the apparatus such that the axis projects through each layer. Each scintillator layer is configured to produce scintillation light indicative of an energy deposition, in that scintillator, of a particle beam incident upon the detector stack along said axis. The apparatus comprises readout circuitry configured to measure the scintillation light of each scintillator layer; and dose profile determination circuitry configured to determine a dose profile of said particle beam within the detector stack. Said determining is based on the measured scintillation light of each scintillator layer, and a quenching correction.

Abstract: A system includes a multi-beam particle microscope for imaging a 3D sample layer by layer, and a computer system with a multi-tier architecture is disclosed. The multi-tier architecture can allow for an optimized image processing by gradually reducing the amount of parallel processing speed when data exchange between different processing systems and/or of data originating from different detection channels takes place. A method images a 3D sample layer by layer. A computer program product includes a program code for carrying out the method.

Abstract: Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: Disclosed herein are methods and system for detecting road marking expressed using alternating infrared reflective tiles comprising high infrared reflective tiles and low infrared red reflective tiles painted on a road surface using paint material(s) characterized by: (1) reflecting light in visible light spectral range deviating less than a first value from the light reflected by the road surface and (2) reflecting light in an infrared spectral range deviating more than a second value from the light reflected by the road surface. Infrared image(s) and visible light image(s) of the road surface which are registered to each other may be analyzed to compute an infrared reflective value and a luminance value for each pixel respectively. A ratio may be computed between the infrared reflective value of and the luminance value of corresponding pixels to identify high and low infrared reflective tiles in pixels having a ratio exceeding a third value.

Abstract: A method of processing a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an ion beam with a focused ion beam (FIB) column; focusing the ion beam on the sample and scanning the focused ion beam across the region of the sample thereby generating secondary electrons that are ejected from a surface of the sample within the region; and during the scanning, applying a negative bias voltage to an electrically conductive structure proximate the region to alter a trajectory of the secondary electrons and repel the secondary electrons back to the sample surface, wherein the electrically conductive structure is one of a gas injection nozzle, a voltage pin or a nano-manipulator.

Abstract: An device for measuring electron beam comprises a Faraday cup comprising an opening; a porous carbon material layer located on a surface of the Faraday cup and suspended at the opening; and an electricity meter electrically connected to the porous carbon material layer. A length of a suspended portion of the porous carbon material layer is greater than or equal to a maximum diameter of an electron beam to be measured. A diameter or a width of the porous carbon material layer is smaller than a minimum diameter of a cross section of the electron beam to be measured. The porous carbon material layer comprises a plurality of carbon material particles, and a plurality of micro gaps exist between the plurality of carbon material particles. A method for measuring an electron beam using the device for measuring electron beam is also provided.

Abstract: A CDMS may include an ion source to generate ions from a sample, a mass spectrometer to separate the generated ions as a function of ion mass-to-charge ratio, an electrostatic linear ion trap (ELIT) having a charge detection cylinder disposed between first and second ion mirrors, wherein ions exiting the mass spectrometer are supplied to the ELIT, a charge generator for generating free charges, a field free region between the charge generator and the charge detection cylinder, and a processor configured to control the charge generator, with no ions in the charge detection cylinder, to generate a target number of free charges and cause the target number of free charges to travel across the field-free region and into contact with the charge detection cylinder to deposit the target number of free charges thereon and thereby calibrate or reset the charge detection cylinder to a corresponding target charge level.

Abstract: The present invention provides a MEMS sample holder comprising an observation section. The observation section includes a first layer, a second layer, and a sample compartment between the first layer and the second layer. The sample compartment is configured for filling a liquid sample and observing the liquid sample filled therewithin. The sample compartment has one, two or more windows through which an electron beam can pass. Each of the windows is formed on two cavities including a first cavity on the first layer and a second cavity on the second layer that is opposite to the first cavity across the sample compartment.

Abstract: The present invention provides a backscattered electron (BSE) detector comprising two or more detection components that are electrically isolated from each other. Each of the detection components includes a single continuous top metal layer configured for directly receiving incident backscattered electrons and for backscattered electron to penetrate therethrough. The thickness of one of the top metal layers is different from the thickness of another one of the top metal layers. The BSE detector can be used in an apparatus of charged-particle beam for imaging a sample material. Signals from the detection components having top metal layers of different thicknesses can be inputted into different signal amplifier circuits to get different energy bands of BSE image.

Abstract: A method for measuring an electron signal or an electron induced signal may be provided. The method may include providing a threshold number of events or a threshold event rate for a pixel on a detector. The method may include collecting from the detector the threshold number of events or determining that the threshold event rate is achieved, wherein a signal at the detector is an electron signal or an electron induced signal from a sample. The method may include modulating an intensity of an electron source directed to the sample in response.

Abstract: An x-ray tube source is disclosed that allows differential phase shift, attenuation, and x-ray scattering features of an object to be acquired in a single exposure. Such multiplexed x-ray tube source includes multiple x-ray spot origins controlled in such a way that each slightly separated spot is temporally modulated “ON and OFF” at differing frequencies. In an x-ray interferometer system, such x-ray tube source forms multiple illumination beams of a single angular view of an object's feature but each with different interference fringe locations. A composite image can be acquired with a high frame-rate digital detector as a component element in such x-ray interferometer system. Such composite image can be subsequently de-multipexed and separately presented according to each spot-source illumination beam.

Abstract: A method comprises receiving an integrated circuit (IC) design file and determining, by one or more processors, dose information from the IC design file. The method further comprises determining, by the one or more processors, a mask vector file from the IC design file, and converting, by the one or more processors, the dose information to a vector file format. Further, the method comprises outputting the dose information in the vector file format and the mask vector file to a mask writer device.

Abstract: It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.

Abstract: Redeposition of substrate material on a fiducial resulting from charged particle beam (CPB) or laser beam milling of a substrate can be reduced with a shield formed on the substrate surface. The shield typically has a suitable height that can be selected based on proximity of an area to be milled to the fiducial. The shield can be formed with the milling beam using beam-assisted chemical vapor deposition (CVD). The same or different beams can be used for milling and beam-assisted CVD.

Abstract: Methods and systems for acquiring transmission electron microscope video data on a rolling-shutter detector at an enhanced frame rate and without temporal distortions are described. Also described are methods to enhance the dynamic range of image and diffraction data acquired using a transmission electron microscope. The disclosed methods and systems may also be applicable to photon detection and imaging systems.

Abstract: The resolution of a TOF mass analyzer is maintained despite a loss of resolution in one or more channels of a multichannel ion detection system by selecting the highest resolution channels for qualitative analysis. Ion packets that impact a multichannel detector are converted into multiplied electrons and emitted from two or more segmented electrodes that correspond to impacts in different regions across a length of the detector. The electrons received by each electrode of the two or more segmented electrodes for each ion packet are converted into digital values in a channel of a multichannel digitizer, producing digital values for at least two or more channels. Qualitative information about the ion packets is calculated using digital values of a predetermined subset of one or more channels of the at least two or more channels known to provide the highest resolution.

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Abstract: An additive manufacturing machine may include an energy beam system configured to emit an energy beam utilized in an additive manufacturing process, and one or more optical elements utilized by, or defining a portion of, the energy beam system and/or an imaging system of the additive manufacturing machine. The imaging system may be configured to monitor one or more operating parameters of the additive manufacturing process. The additive manufacturing machine may include a light source configured to emit an assessment beam that follows an optical path incident upon the one or more optical elements, and one or more light sensors configured to detect a reflected beam comprising at least a portion of the assessment beam reflected and/or transmitted by at least one of the one or more optical elements.

Abstract: Methods and systems for detecting charged particles from a specimen are provided. One system includes a first repelling mesh configured to repel charged particles from a specimen having an energy lower than a first predetermined energy and a second repelling mesh configured to repel the charged particles that pass through the first repelling mesh and have an energy that is lower than a second predetermined energy. The system also includes a first attracting mesh configured to attract the charged particles that pass through the first repelling mesh, are repelled by the second repelling mesh, and have an energy that is higher than the first predetermined energy and lower than the second predetermined energy. The system further includes a first detector configured to generate output responsive to the charged particles that pass through the first attracting mesh.

Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.