Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Abstract: Examples of the present disclosure relate to a particle beam dose profile measurement apparatus comprising a particle detector stack comprising a plurality of scintillator layers. Each scintillator layer of the detector stack is disposed along an axis of the apparatus such that the axis projects through each layer. Each scintillator layer is configured to produce scintillation light indicative of an energy deposition, in that scintillator, of a particle beam incident upon the detector stack along said axis. The apparatus comprises readout circuitry configured to measure the scintillation light of each scintillator layer; and dose profile determination circuitry configured to determine a dose profile of said particle beam within the detector stack. Said determining is based on the measured scintillation light of each scintillator layer, and a quenching correction.

Abstract: A system includes a multi-beam particle microscope for imaging a 3D sample layer by layer, and a computer system with a multi-tier architecture is disclosed. The multi-tier architecture can allow for an optimized image processing by gradually reducing the amount of parallel processing speed when data exchange between different processing systems and/or of data originating from different detection channels takes place. A method images a 3D sample layer by layer. A computer program product includes a program code for carrying out the method.

Abstract: Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

Abstract: Disclosed herein are methods and system for detecting road marking expressed using alternating infrared reflective tiles comprising high infrared reflective tiles and low infrared red reflective tiles painted on a road surface using paint material(s) characterized by: (1) reflecting light in visible light spectral range deviating less than a first value from the light reflected by the road surface and (2) reflecting light in an infrared spectral range deviating more than a second value from the light reflected by the road surface. Infrared image(s) and visible light image(s) of the road surface which are registered to each other may be analyzed to compute an infrared reflective value and a luminance value for each pixel respectively. A ratio may be computed between the infrared reflective value of and the luminance value of corresponding pixels to identify high and low infrared reflective tiles in pixels having a ratio exceeding a third value.

Abstract: A method of processing a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an ion beam with a focused ion beam (FIB) column; focusing the ion beam on the sample and scanning the focused ion beam across the region of the sample thereby generating secondary electrons that are ejected from a surface of the sample within the region; and during the scanning, applying a negative bias voltage to an electrically conductive structure proximate the region to alter a trajectory of the secondary electrons and repel the secondary electrons back to the sample surface, wherein the electrically conductive structure is one of a gas injection nozzle, a voltage pin or a nano-manipulator.

Abstract: An device for measuring electron beam comprises a Faraday cup comprising an opening; a porous carbon material layer located on a surface of the Faraday cup and suspended at the opening; and an electricity meter electrically connected to the porous carbon material layer. A length of a suspended portion of the porous carbon material layer is greater than or equal to a maximum diameter of an electron beam to be measured. A diameter or a width of the porous carbon material layer is smaller than a minimum diameter of a cross section of the electron beam to be measured. The porous carbon material layer comprises a plurality of carbon material particles, and a plurality of micro gaps exist between the plurality of carbon material particles. A method for measuring an electron beam using the device for measuring electron beam is also provided.

Abstract: A CDMS may include an ion source to generate ions from a sample, a mass spectrometer to separate the generated ions as a function of ion mass-to-charge ratio, an electrostatic linear ion trap (ELIT) having a charge detection cylinder disposed between first and second ion mirrors, wherein ions exiting the mass spectrometer are supplied to the ELIT, a charge generator for generating free charges, a field free region between the charge generator and the charge detection cylinder, and a processor configured to control the charge generator, with no ions in the charge detection cylinder, to generate a target number of free charges and cause the target number of free charges to travel across the field-free region and into contact with the charge detection cylinder to deposit the target number of free charges thereon and thereby calibrate or reset the charge detection cylinder to a corresponding target charge level.

Abstract: The present invention provides a backscattered electron (BSE) detector comprising two or more detection components that are electrically isolated from each other. Each of the detection components includes a single continuous top metal layer configured for directly receiving incident backscattered electrons and for backscattered electron to penetrate therethrough. The thickness of one of the top metal layers is different from the thickness of another one of the top metal layers. The BSE detector can be used in an apparatus of charged-particle beam for imaging a sample material. Signals from the detection components having top metal layers of different thicknesses can be inputted into different signal amplifier circuits to get different energy bands of BSE image.

Abstract: The present invention provides a MEMS sample holder comprising an observation section. The observation section includes a first layer, a second layer, and a sample compartment between the first layer and the second layer. The sample compartment is configured for filling a liquid sample and observing the liquid sample filled therewithin. The sample compartment has one, two or more windows through which an electron beam can pass. Each of the windows is formed on two cavities including a first cavity on the first layer and a second cavity on the second layer that is opposite to the first cavity across the sample compartment.

Abstract: A method for measuring an electron signal or an electron induced signal may be provided. The method may include providing a threshold number of events or a threshold event rate for a pixel on a detector. The method may include collecting from the detector the threshold number of events or determining that the threshold event rate is achieved, wherein a signal at the detector is an electron signal or an electron induced signal from a sample. The method may include modulating an intensity of an electron source directed to the sample in response.

Abstract: An x-ray tube source is disclosed that allows differential phase shift, attenuation, and x-ray scattering features of an object to be acquired in a single exposure. Such multiplexed x-ray tube source includes multiple x-ray spot origins controlled in such a way that each slightly separated spot is temporally modulated “ON and OFF” at differing frequencies. In an x-ray interferometer system, such x-ray tube source forms multiple illumination beams of a single angular view of an object's feature but each with different interference fringe locations. A composite image can be acquired with a high frame-rate digital detector as a component element in such x-ray interferometer system. Such composite image can be subsequently de-multipexed and separately presented according to each spot-source illumination beam.

Abstract: A method comprises receiving an integrated circuit (IC) design file and determining, by one or more processors, dose information from the IC design file. The method further comprises determining, by the one or more processors, a mask vector file from the IC design file, and converting, by the one or more processors, the dose information to a vector file format. Further, the method comprises outputting the dose information in the vector file format and the mask vector file to a mask writer device.

Abstract: Redeposition of substrate material on a fiducial resulting from charged particle beam (CPB) or laser beam milling of a substrate can be reduced with a shield formed on the substrate surface. The shield typically has a suitable height that can be selected based on proximity of an area to be milled to the fiducial. The shield can be formed with the milling beam using beam-assisted chemical vapor deposition (CVD). The same or different beams can be used for milling and beam-assisted CVD.

Abstract: It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.

Abstract: Methods and systems for acquiring transmission electron microscope video data on a rolling-shutter detector at an enhanced frame rate and without temporal distortions are described. Also described are methods to enhance the dynamic range of image and diffraction data acquired using a transmission electron microscope. The disclosed methods and systems may also be applicable to photon detection and imaging systems.

Abstract: The resolution of a TOF mass analyzer is maintained despite a loss of resolution in one or more channels of a multichannel ion detection system by selecting the highest resolution channels for qualitative analysis. Ion packets that impact a multichannel detector are converted into multiplied electrons and emitted from two or more segmented electrodes that correspond to impacts in different regions across a length of the detector. The electrons received by each electrode of the two or more segmented electrodes for each ion packet are converted into digital values in a channel of a multichannel digitizer, producing digital values for at least two or more channels. Qualitative information about the ion packets is calculated using digital values of a predetermined subset of one or more channels of the at least two or more channels known to provide the highest resolution.

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Abstract: An additive manufacturing machine may include an energy beam system configured to emit an energy beam utilized in an additive manufacturing process, and one or more optical elements utilized by, or defining a portion of, the energy beam system and/or an imaging system of the additive manufacturing machine. The imaging system may be configured to monitor one or more operating parameters of the additive manufacturing process. The additive manufacturing machine may include a light source configured to emit an assessment beam that follows an optical path incident upon the one or more optical elements, and one or more light sensors configured to detect a reflected beam comprising at least a portion of the assessment beam reflected and/or transmitted by at least one of the one or more optical elements.

Abstract: Methods and systems for detecting charged particles from a specimen are provided. One system includes a first repelling mesh configured to repel charged particles from a specimen having an energy lower than a first predetermined energy and a second repelling mesh configured to repel the charged particles that pass through the first repelling mesh and have an energy that is lower than a second predetermined energy. The system also includes a first attracting mesh configured to attract the charged particles that pass through the first repelling mesh, are repelled by the second repelling mesh, and have an energy that is higher than the first predetermined energy and lower than the second predetermined energy. The system further includes a first detector configured to generate output responsive to the charged particles that pass through the first attracting mesh.

Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.

Abstract: Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 ?m and equal to or less than 500 ?m from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

Abstract: A charged particle beam apparatus using a light guide that improves light utilization efficiency includes a detector including a scintillator for emitting light when a charged particle is incident, a light receiving element, and a light guide for guiding the light from the scintillator to the light receiving element. The light guide includes: an incident surface that faces a light emitting surface of the scintillator and to which the light emitted by the scintillator is incident; an emitting surface that is configured to emit light; and a reflecting surface that is inclined with respect to the incident surface so that the light from the incident surface is reflected toward the emitting surface. The emitting surface is smaller than the incident surface. A slope surface is provided between the incident surface and the emitting surface, faces the reflecting surface, and is inclined with respect to the incident surface.

Abstract: Embodiments of the present disclosure provide systems and methods for enhancing the semiconductor manufacturing yield. Embodiments of the present disclosure provide a yield improvement system. The system comprises a training tool configured to generate training data based on receipt of one or more verified results of an inspection of a first substrate. The system also comprises a point determination tool configured to determine one or more regions on a second substrate to inspect based on the training data, weak point information for the second substrate, and an exposure recipe for a scanner of the second substrate.

Abstract: A Procedural EBL system implements a user-provided oracle function (e.g., associated with a specific pattern) to generate control instructions for electron beam drive electronics in an on-demand basis. A control system may invoke the oracle function to query the pattern at individual point locations (e.g., individual x,y locations), and/or it may query the pattern over an area corresponding to a current field being addressed by the beam and stage positioner, for example. This Procedural EBL configuration manages control and pattern generation so that the low-level drive electronics and beam column may remain unchanged, allowing it to leverage existing EBL technologies.

Abstract: A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

Abstract: A charged particle beam adjustment method includes scanning, with a charged particle beam an emission current of which is set to a first adjustment value smaller than a target value, an aperture substrate including a hole disposed to be a focus position of the charged particle beam using each of lens values in an electron lens and calculating first resolution, calculating a first function of lens values and the first resolution and calculating a lens value range, scanning, with the charged particle beam the emission current of which is set to a second adjustment value, the aperture substrate using each of lens values set to avoid the lens value range and calculating second resolution, calculating a second function of lens values and the second resolution and estimating a lens value at a just focus, and adjusting the electron lens to the lens value at the just focus.

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Abstract: A specimen inspection machine includes a case, a carrying device, an inspection device, a sensing device and a control device. The carrying device is disposed in the case. The inspection device is disposed on the carrying device. The inspection device has accommodating grooves. Each accommodating groove is used for accommodating an inspection sample. The inspection sample at least includes a specimen. The sensing device is disposed in the case on a side of the case opposite the carrying device. The sensing device senses the inspection device to generate first and second sensing signals. The control device is disposed in the case. The control device determines whether the inspection device is disposed in the correct position according to the first sensing signals, and determines whether inspection samples are placed in the accommodating grooves according to the second sensing signals to inspect the accommodating grooves placed with the inspection samples.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

Abstract: The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Abstract: Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved alignment mechanism is disclosed. An improved charged particle beam inspection apparatus may include a second electron detection device to generate one or more images of one or more beam spots of the plurality of secondary electron beams during the alignment mode. The beam spot image may be used to determine the alignment characteristics of one or more of the plurality of secondary electron beams and adjust a configuration of a secondary electron projection system.

Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

Abstract: A method for in-situ joint nanoscale three-dimensional imaging and chemical analysis of a sample. A single charged particle beam device is used for generating a sequence of two-dimensional nanoscale images of the sample, and for sputtering secondary ions from the sample, which are analysed using a secondary ion mass spectrometry device. The two-dimensional images are combined into a three-dimensional volume representation of the sample, the data of which is combined with the results of the chemical analysis.

Abstract: An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

Abstract: A CDMS may include an ELIT having a charge detection cylinder (CD), a charge generator for generating a high frequency charge (HFC), a charge sensitive preamplifier (CP) having an input coupled to the CD and an output configured to produce a charge detection signal (CHD) in response to a charge induced on the CD, and a processor configured to (a) control the charge generator to induce an HFC on the CD, (b) control operation of the ELIT to cause a trapped ion to oscillate back and forth through the CD each time inducing a charge thereon, and (c) process CHD to (i) determine a gain factor as a function of the HFC induced on the CD, and (ii) modify a magnitude of the portion of CHD resulting from the charge induced on the CD by the trapped ion passing therethrough as a function of the gain factor.

Abstract: An embodiment of a shutter assembly is described that comprises a support structure with a number of stations and operatively coupled to a motor configured to translate each of the stations to a position in front of a detector, wherein a first station comprises a first aperture, a first charged particle filter, and a first window; and a second station comprises a second aperture larger than the first aperture, a second charged particle filter, and a second window thinner than the first window.

Abstract: An airborne, gas, or liquid particle sensor with multiple particle sensor blocks in a single particle counter. Each sensor would sample a portion of the incoming airstream, or possibly a separate airstream. The various counters could be used separately or in concert.

Abstract: There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

Abstract: A lithography process is described by a design for a lithographic mask and a description of the lithography configuration, which may include the lithography source, collection/illumination optics, projection optics, resist, and/or subsequent fabrication steps. The actual lithography process uses a lithographic mask fabricated from the mask design, which may be different than the nominal mask design. A mask fabrication model models the process for fabricating the lithographic mask from the mask design. Typically, this is an electron-beam (e-beam) process, which includes e-beam exposure of resist on a mask blank, processing of the exposed resist to form patterned resist, and etching of the mask blank with the patterned resist. The mask fabrication model, usually in conjunction with other process models, is used to estimate a result of the lithography process. Mask correction is then applied to the mask design based on the simulation result.

Abstract: A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

Abstract: The present invention features the application of a simple, inductively-coupled measurement system into the cap of standard laboratory sample tubes, thus enabling continuous, wireless ionic sensing of a bevy of samples. The system may be powered by a compact Class E amplifier using inductive coupling via a designed resonance frequency of 1 MHz. Other frequencies can be used, such as the popular near-field communication (NFC) frequency of 13.66 MHz. Signals are transmitted back via load modulation at frequencies a fraction of the power carrier frequency, thus allowing for extraction of the signal frequency. Results clearly show that modulation frequency tracks closely with open circuit potential, and the system features good sensitivity and linearity. This system holds promise for a host of applications.

Abstract: Vision systems on catheters, cannulas, or similar devices with guiding lumens include receptors distributed in annular areas around respective lumens. Each of the receptors has a field of view covering only a portion of an object environment, and the field of view of each of the receptors overlaps with at least one of the fields of view of the other receptors. A processing system can receive image data from the receptors of the vision systems and combine the image data to construct a visual representation of the object environment.

Abstract: A charged particle beam apparatus using a light guide that improves light utilization efficiency includes a detector including a scintillator for emitting light when a charged particle is incident, a light receiving element, and a light guide for guiding the light from the scintillator to the light receiving element. The light guide includes: an incident surface that faces a light emitting surface of the scintillator and to which the light emitted by the scintillator is incident; an emitting surface that is configured to emit light; and a reflecting surface that is inclined with respect to the incident surface so that the light from the incident surface is reflected toward the emitting surface. The emitting surface is smaller than the incident surface. A slope surface is provided between the incident surface and the emitting surface, faces the reflecting surface, and is inclined with respect to the incident surface.

Abstract: Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (1); a sample stage (2) on which a sample (4) to be processed by being irradiated with an unfocused ion beam from the ion source (1) is placed; and a drive unit (8) configured to be arranged between the ion source (1) and the sample stage (2), and to move a linear ion beam measuring member (7) extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit (8) moves the ion beam measuring member (7) within an emission range of the ion beam in a state where the ion beam is outputted from the ion source (1) under a first emission condition, and an ion beam current flowing through the ion beam measuring member (7) is measured by irradiating the ion beam measuring member (7) with the ion beam.

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.