Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

Abstract: A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.

Abstract: The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates.

Abstract: A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

Abstract: The invention relates to a cathodoluminescence detection system comprising: a collecting optic (112) collecting light radiation (108) from a sample illuminated by a beam of charged particles and reflecting said radiation (108) onto analysis means, said collecting optic (112) being placed in a chamber, called a vacuum chamber, wherein the pressure is below atmospheric pressure; and means (316) for adapting the light radiation, placed downstream of the collecting optic (112) and designed to adapt said light radiation (108) at the inlet of the analysis means. Said system is characterized in that all or part of the adapting means (316) is placed in an environment where the pressure is higher than the pressure in said vacuum chamber.

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes an emitter that emits a charged particle beam, an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings, a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams, a stage on which a substrate irradiated with the multiple beams, a detector that detects a reflection charged particle from the substrate, feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector, and aberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount.

Abstract: A composite charged particle beam apparatus modulates an irradiation condition of a charged particle beam at high speed and detects a signal in synchronization with a modulation period to extract a signal arising from a particular charged particle beam when a sample is irradiated with a plurality of charged particle beams simultaneously. Light emitted from two or more kinds of scintillators having different light emitting properties is dispersed, signal strength is detected, and a signal is processed based on a ratio of first signal strength when the sample is irradiated with a first charged particle beam alone to second signal strength when the sample is irradiated with a second charged particle beam alone. The apparatus can extract only a signal arising from a desired charged particle beam even when the sample is irradiated with the plurality of charged particle beams simultaneously.

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

Abstract: An apparatus may include an electrode system, the electrode system comprising a plurality of electrodes to guide an ion beam from an entrance aperture to an exit aperture, and a voltage supply to apply a plurality of voltages to the electrode system. The electrode system may comprise an exit electrode assembly, where the exit electrode assembly includes a first exit electrode and a second exit electrode, separated from the first exit electrode by an electrode gap. The first exit electrode and the second exit electrode may be movable with respect to one another so as to change a size of the electrode gap over a gap range.

Abstract: Disclosed is a charged particle optical apparatus. The charged particle optical apparatus has a liner electrode in a first vacuum zone. The liner electrode is used to generate an electrostatic objective lens field. The apparatus has a second electrode which surrounds at least a section of the primary particle beam path. The section extends in the first vacuum zone and downstream of the liner electrode. A third electrode is provided having a differential pressure aperture through which the particle beam path exits from the first vacuum zone. A particle detector is configured for detecting emitted particles, which are emitted from the object and which pass through the differential pressure aperture of the third electrode. The liner electrode, the second and third electrodes are operable at different potentials relative to each other.

Abstract: A compact wavelength dispersing device and a wavelength selective optical switch based on the wavelength dispersing device is described. The wavelength dispersing device has a folding mirror that folds the optical path at least three times. A focal length of a focusing coupler of the device is reduced and the NA is increased, while the increased optical aberrations are mitigated by using an optional coma-compensating wedge. A double-pass arrangement for a transmission diffraction grating allows further focal length and overall size reduction due to increased angular dispersion.

Abstract: A multi charged particle beam exposure method includes transmitting ON/OFF control signals each being an ON/OFF control signal for a corresponding beam of multi-beams of charged particle beams in a batch to a blanking apparatus in which there are mounted a substrate where a plurality of passage holes are formed to let a corresponding beam of the multi-beams individually pass therethrough, and a plurality of individual blanking mechanisms arranged in the substrate to individually perform blanking deflection of each beam of the multi-beams, and irradiating the substrate with the multi-beams in accordance with the ON/OFF control signals transmitted in a batch, while shifting an irradiation timing for each group obtained by grouping the multi-beams into a plurality of groups by a plurality of individual blanking mechanisms mounted in the blanking apparatus.

Abstract: A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.

Abstract: An object of the present invention is to provide a charged particle beam device which can realize improved contrast of an elongated pattern in a specific direction, such as a groove-like pattern. In order to achieve the above-described object, the present invention proposes a charged particle beam device including a detector for detecting a charged particle obtained based on a charged particle beam discharged to a sample. The charged particle beam device includes a charged particle passage restricting member that has at least one of an arcuate groove and a groove having a longitudinal direction in a plurality of directions, and a deflector that deflects the charged particle discharged toward the groove from the sample. The charged particle discharged from the sample is deflected to a designated position of the groove.

Abstract: The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.

Abstract: A multi-beam lens device is described, which includes: a first beam passage for a first charged particle beam formed along a first direction between a first beam inlet of the first beam passage and a first beam outlet of the first beam passage; a second beam passage for a second charged particle beam formed along a second direction between a second beam inlet of the second beam passage and a second beam outlet of the second beam passage, wherein the first direction and the second direction are inclined with respect to each other by an angle (?) of 5° or more such that the first beam passage approaches the second beam passage toward the first beam outlet; and a common excitation coil or a common electrode arrangement configured for focussing the first charged particle beam and the second charged particle beam. Further, a charged particle beam device as well as a method of operating a multi-beam lens device are described.

Abstract: An electrosurgical system for performing an electrosurgical procedure is provided and includes an electrosurgical generator and a calibration computer system. The electrosurgical generator includes one or more processors and a measurement module including one or more log amps that are in operative communication with the processor. The calibration computer system configured to couple to a measurement device and is configured to measure parameters of an output signal generated by the electrosurgical generator. The calibration computer system is configured to compile the measured parameters into one or more data look-up tables and couple to the electrosurgical generator for transferring the data look-up table(s) to memory of the electrosurgical generator. The microprocessor is configured to receive an output from the log amp(s) and access the data look-up table(s) from memory to execute one or more control algorithms for controlling an output of the electrosurgical generator.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

Abstract: A vision system that may be used in a catheter or similar guiding instrument includes receptors distributed in an annular area. Each of the receptors has a field of view covering only a portion of an object environment, and the field of view of each of the receptors overlaps with at least one of the fields of view of the other receptors. A processing system can receive image data from the receptors and combine image data from the receptors to construct a visual representation of the entirety of the object environment.

Abstract: Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

Abstract: Beam current variation system for a cyclotron, arranged in the inner center of the cyclotron, downstream from the ion source generating the charged particle beam, the system comprising a deflector system powered by a voltage and a collimator. The beam is dumped in the collimator, if the deflector system (10; 20, 21) is not powered, and the beam is switched on by powering the deflector system with a voltage.

Abstract: An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.

Abstract: Disclosed is a charged particle optical apparatus, which includes a particle optical arrangement, configured to define a particle beam path for inspecting an object. The object is accommodated in a pressure-controlled interior of a specimen chamber during the inspection of the object. The charged particle optical apparatus further includes a differential pressure module having a differential pressure aperture. A positioning arm is arranged in the specimen chamber for selectively position the differential pressure module within the pressure-controlled interior of the specimen chamber into an operating position in which the particle beam path passes through the differential pressure aperture. The selective positioning includes an advancing movement of the differential pressure module toward the primary particle beam path. The advancing movement is transmitted to the differential pressure module by a track-guided movement of the positioning arm.

Abstract: A charged-particle-beam device is provided with a data processing unit that removes, from a detector signal, the effect that scattering of a primary charged-particle beam before the primary charged-particle beam reaches a specimen has on the spot shape of the primary charged-particle beam. For example, when using an electron microscope to observe a specimen in a non-vacuum atmosphere, the effect that scattering of a primary charged-particle beam due to a barrier film or a gas present in a non-vacuum space has on the spot shape of the primary charged-particle beam is removed from a signal acquired by a detector. This makes it easy to obtain high-quality images.

Abstract: A platform for context-aware experimentation includes a housing for one or more sensors for obtaining data pertaining to an on-going experiment, a communications subsystem for transmitting data obtained by the sensors, and a microcontroller for receiving data from the sensors, providing it to the communications subsystem, and possibly controlling the sensors. The housing may be a tube, which may be configured to hold a sample and may have a cap, or a waterproof package, which may have an opening to admit at least part of a sample. The platform may include a power source. The platform may include a computer processor, located outside the housing, for analyzing the data obtained by the sensors, determining the experimental context in which the sensors are operating and/or which experimental step in a protocol is being performed, and/or reminding users of required parameters for the steps in the protocol.

Abstract: The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.

Abstract: The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens (5) is turned off, an electron beam crossover (11, 13) is matched with a selected area aperture (65), and the focal distance of a first imaging lens (61) can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector (81) is disposed in a stage following the first imaging lens (61), and conditions for an irradiating optical system (4) can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.

Abstract: The present disclosure provides a system for imaging a signal charged particle beam emanating from a sample by impingement of a primary charged particle beam. The system includes a detector arrangement having a first detection element for detecting a first signal charged particle sub-beam of the signal charged particle beam originating from a first spot on the sample and a second detection element for detecting a second signal charged particle sub-beam of the signal charged particle beam originating from a second spot on the sample, wherein the first detection element and the second detection element are separated from each other, and signal charged particle optics.

Abstract: Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Abstract: The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (301); a first multi-aperture plate (320) having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate (313) having plural apertures; a carrier (340), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator (350) configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system.

Abstract: The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10?5 per incident neon ion.

Abstract: An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

Abstract: A vacuum chamber B which stores a length meter is provided separately from a vacuum chamber A in which an object to be measured is installed, an installation base 5 which is integrally mounted to a surface plate 10 that supports the chamber A and/or an object to be measured is installed on a side portion of the vacuum chamber A, and the vacuum chamber B is disposed and installed on the installation base 5 so that a side wall thereof overlaps a side wall A1 of the vacuum chamber A with a side plate member 13 interposed therebetween.

Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Abstract: A specimen image capture method using a charged particle microscope device includes: a first image acquisition step in which the gain of a detector in a charged particle microscope is set to a first gain value, charged particle beam scanning is carried out on a specimen, and a first image is obtained; a second image acquisition step in which the gain of the detector is set to a second gain value, which is different to the first gain value, charged particle beam scanning is carried out on the specimen, and a second image is obtained; and an image combination step in which the first gain value and the second gain value are used and the first image and the second image are combined.

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract: An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

Abstract: Provided is a method of measuring dissolved methane in seawater, including: a) injecting a sample into a vacuum container containing a cadmium chloride solution injected thereinto and refrigerating the vacuum container; b) shaking the vacuum container, and achieving temperature equilibrium with an ambient temperature; c) separating the dissolved methane from residue by passing the sample in the vacuum container through a methane separator; and d) analyzing the separated dissolved methane by a mass spectrometer. According to the method of measuring dissolved methane in seawater of the present invention, a recovery rate of dissolved methane may be maximally increased to improve an analysis rate accordingly, and an analysis of dissolved methane may be conducted even with a small amount of sample, and in addition to the measurement of the dissolved methane, a sulfur isotope analysis may be simultaneously conducted by using a sample from which the dissolved methane is extracted.

Abstract: Systems and methods are provided for ion implantation. For example, ion implantation is performed using a first ion implant tool. At least one condition parameter associated with the first ion implant tool is dynamically obtained. Whether the first ion implant tool is in a first condition is determined based on the at least one condition parameter. Ion implantation is performed using a second ion implant tool based on the determination.

Abstract: The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (301); a first multi-aperture plate (320) having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate (313) having plural apertures; a carrier (340), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator (350) configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system.

Abstract: Variable pulse frequency during an output session of a betatron device and adjustable energy from pulse to pulse are provided. A different bias magnetic field may be used for different cycles of an output session, thereby providing different pulse energies. In one example, the bias field can be switched from a positive value to zero, with energy stored in a storage device when the bias field is zero. The bias field can also be used to expand electrons from a stable orbit when the bias field is decreased. For variable pulse frequency, when a current in the swing coils decreases to zero, the swing coils can be disengaged from a storage device for an adjustable time before re-engaging for a next cycle, thereby adjusting the frequency. In addition, radiation dose output can be adjusted by varying a length of time for the injection of electrons into a betatron.

Abstract: A multi-part mask has a pattern plate, which includes a planar portion that has the desired aperture pattern to be used during workpiece processing. The multi-part mask also has a mounting frame, which is used to hold the pattern plate. Prior to assembly, the pattern plate has an aligning portion, which has one or more holes through which reusable alignment pins are inserted. These alignment pins enter kinematic joints disposed on the mounting frame, which serve to precisely align the pattern plate to the mounting frame. After the pattern plate has been secured to the mounting frame, the aligning portion can be detached from the pattern plate. The alignment pins can be reused at a later time. In some embodiments, the pattern plate can later be removed from the mounting frame, so that the mounting frame may be reused.

Abstract: A particle beam detector is disclosed. The particle beam detector can include a particle beam receiving portion configured to convert particle beam energy to heat, and a plurality of temperature measuring devices disposed about the particle beam receiving portion. A location of a particle beam on the particle beam receiving portion can be determined by a temperature difference between at least two of the plurality of temperature measuring devices.

Abstract: Flanges (10a) of an attachment plate (10) integrally combined with an ion detector (5) are fixed to an inner surface of a vacuum chamber (1) via cushioning members (12), such as O-rings. Although the vacuum chamber (1) mechanically vibrates due to a turbomolecular pump attached to it, this vibration is absorbed by the cushioning members (12), whereby the vibration of the ion detector (5) is suppressed. As a result, the noise which occurs with a vibration of the ion detector (5) and is superposed on the detection signal is reduced. Thus, the quality of the detection signal can be improved by a simple and inexpensive structure.

Abstract: A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for.

Abstract: A charged-particle beam drawing method includes: storing a plurality of time interval patterns defining time intervals for performing a diagnosis of a drift amount of charged-particle beam; drawing a predetermined drawing pattern on a sample by irradiating the beam on the sample; receiving first event information including occurrence of event and type of event; acquiring region information specifying a region being drawn by the beam; selecting a specific time interval pattern from the plurality of time interval patterns based on the type of the event of the first event information and the region information; diagnosing the drift amount of the beam based on the specific time interval pattern, until second event information is received, the second event information includes occurrence of event and type of event; and drawing a predetermined drawing pattern on the sample while performing a drift correction of the charged-particle beam, based on the diagnosing.

Abstract: An inspection system for scanning cargo and vehicles is described which employs an X-ray source that includes an electron beam generator, for generating an electron beam; an accelerator for accelerating said electron beam in a first direction; and, a first set of magnetic elements for transporting said electron beam into a magnetic field created by a second set of magnetic elements, wherein the magnetic field created by said second set of magnetic elements causes said electron beam to strike a target such that the target substantially only generates X-rays focused toward a high density section in the scanned object, which is estimated in a second pulse using image data captured by a detector array in a first pulse. The electron beam direction is optimized by said X-ray source during said second pulse to focus X-rays towards said high density section based on said image data in said first pulse.

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

Abstract: Provided is a charged particle beam radiation control device that controls radiation of a charged particle beam, the charged particle beam radiation control device including: a controller which controls an acceleration voltage for accelerating charged particles, wherein the controller includes a set acceleration voltage controller which selects a non-radiation state of a charged particle beam by setting an acceleration voltage of a radiation state of the charged particle beam to a reference acceleration voltage and changing the acceleration voltage to a set acceleration voltage larger or smaller than the reference acceleration voltage.