Abstract: A method of investigating a sample using a charged-particle microscope is disclosed. By directing an imaging beam of charged particles at a sample, a resulting flux of output radiation is detected from the sample. At least a portion of the output radiation is examined using a detector, the detector comprising a Solid State Photo-Multiplier. The Solid State Photo-Multiplier is biased so that its gain is matched to the magnitude of output radiation flux.

Abstract: A particle therapy system is capable of reducing an increase in treatment time caused by the initialization operation of magnets in the execution of the scanning irradiation method successively changing the energy level of a beam extracted from an accelerator. An irradiation control apparatus has a scheme that calculates setting vales of excitation current for bending magnets for a transport system on every irradiation condition (energy condition), and sets appropriate excitation current values according to the irradiation sequence. The irradiation control apparatus 35 prestores in a current supply control table 1 reference current values determined corresponding to energy levels of the ion beam, prestores in current supply compenzation value tables 1, 2 compenzation current values determined corresponding to energy levels of the ion beam and numbers of times of changing the energy level, and calculates the excitation current value of the magnets by using the values prestored in the tables.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.

Abstract: A charged particle beam writing apparatus according to an embodiment, includes a laser displacement meter configured to measure a position of a substrate to be written; a correction unit configured to correct a misregistration amount of the position of the substrate measured by the laser displacement meter from a reference position of the substrate; and a writing unit configured to write a pattern onto the substrate corrected for the misregistration amount by using a charged particle beam.

Abstract: A radiation therapy device includes an irradiation field limiting apparatus. The irradiation field limiting apparatus includes a collimator for adjusting the irradiation field, and a verification apparatus for visually verifying the irradiation field. The verification apparatus is configured such that the irradiation field is optically displayed on a patient that is positioned at a distance from the isocenter of the radiation therapy device.

Abstract: A particle beam device has a first column with a first beam axis, the first column having a first particle beam generator and a first objective lens for focusing the first particle beam on an object. A second column with a second beam axis is provided, the second column having a second particle beam generator and a second objective lens for focusing the second particle beam on the object. A detector, having a detection axis, detects interacting particles and/or radiation. The first beam axis and the second beam axis define a first angle, different from 0° and from 180°. The first and second beam axes are situated in a first plane. The detection axis of the detector and the first beam axis are situated in a second plane. The first plane and the second plane define a second angle having an absolute value in the range of 65° to 80°.

Abstract: The invention concerns a device and a process for adjusting the range of an ion beam, in particular for irradiation in tumor therapy. For this purpose, first the reference position of a target volume to be irradiated is determined. Subsequently, the range of an ion beam is configured such that said beam is adjusted to the reference position of the target volume, in such a manner that the Bragg peak, i.e. the maximal energy loss and thereby the maximal damage occurs in the region of the target volume which is to be destroyed. In the case that it has been determined that the reference position has been altered by a movement of the target volume, the ion beam is then deflected from the beam axis such that the ion beam is directed to various regions of a range modulator, in order that the ion beam experience a correspondingly adjusted energy loss in passing through the range modulator.

Abstract: A device is arranged for imparting an orbital angular momentum to a charged particle wave propagating along an axis in a charged particle beam generating apparatus. The device includes a first conductive element comprising a plurality of angularly spaced electrical conductors arranged around the axis, and a second conductive element. The first and second conductive elements are spaced apart along the direction of the axis, and are adapted for transmitting a charged particle wave propagating along the axis. A connecting means is adapted for supplying an electrical potential to the plurality of angularly spaced electrical conductors for inducing an angular gradient of the phase of the charged particle wave when transmitted along the axis, in which the projection along the axis of the electrical potential varies as a function of an angular position with respect to the axis.

Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

Abstract: A focused ion beam apparatus includes a lens interferometer configured to detect a relative position of an ion beam column and a sample. An image forming section includes an irradiation position specifying section configured to specify an irradiation position of an ion beam based on the detected relative position of the ion beam column and the sample, and a luminance setting section configured to set luminance of a pixel of an observation image based on the specified irradiation position of the ion beam and a detected amount of secondary particles.

Abstract: An ion detection system for detecting ions whose velocity varies during an operating cycle. The ion detection system includes a dynode electron multiplier (e.g., a microchannel plate (MCP)) having a bias voltage input, and a bias voltage source to apply a bias voltage to the bias voltage input of the dynode electron multiplier. With a fixed bias voltage applied to its bias voltage input, the dynode electron multiplier has a gain dependent on the velocity of ions incident thereon. The bias voltage applied by the bias voltage source to the bias voltage input of the dynode electron multiplier varies during the operating cycle to reduce the dependence of the gain of the dynode electron multiplier on the velocity of the ions incident thereon.

Abstract: An electron beam inspection device observes a sample by irradiating the sample set on a stage with electron beams and detecting the electron beams from the sample. The electron beam inspection device has one electron column which irradiates the sample with the electron beams, and detects the electron beams from the sample. In this one electron column, a plurality of electron beam irradiation detecting systems are formed which each form electron beam paths in which the electron beams with which the sample is irradiated and the electron beams from the sample pass. The electron beam inspection device inspects the sample by simultaneously using a plurality of electron beam irradiation detecting systems and simultaneously irradiating the sample with the plurality of electron beams.

Abstract: According to one embodiment, a pattern measurement apparatus includes a scan controller, a focus controller, a stage, a sensor, a signal processor, and a measurement unit. The scan controller is configured to control a scanning direction of an electron beam. The focus controller is configured to control a focus position of the electron beam. The stage is configured to have a substrate placed on the stage, a pattern being provided in the substrate. The sensor is configured to sense secondary electrons due to the electron beam irradiated onto the pattern. The signal processor is configured to process a signal sensed by the sensor. The signal processor is configured to determine at least one of third signals from at least one of first signals and at least one of second signals. The measurement unit is configured to measure a position of the pattern from the third signals.

Abstract: The present invention provides a drawing apparatus for performing drawing on a substrate with a charged particle beam, the apparatus including a controller configured to perform control of the drawing performed by movement of a stage and a blanking function of each of a plurality of charged particle optical systems, wherein the controller is configured to perform, with respect to a first charged particle optical system, of the plurality of charged particle optical systems, from a plurality of charged particle beams reach a first region and a second region, formed on the substrate and adjacent to each other, the control such that the drawing is performed only in one of the first and second regions with a first portion of charged particle beams of the plurality of charged particle beams with the stage moved in a second direction.

Abstract: A drawing apparatus includes: plural charged particle optical systems arrayed at a pitch in a first direction, each configured to irradiate a substrate with charged particle beams; a stage configured to hold the substrate and be moved relative to the charged particle optical systems in a second direction orthogonal to the first direction; and a controller configured to determine charged particle beams for the drawing with respect to each charged particle optical system so as to satisfy a relation given by SW=Pc/?=Ps/(? where Ps is an array pitch of shot regions in the first direction, SW is a width, in the first direction, of each drawing region by each charged particle optical system, Pc be an array pitch of drawing regions in the first direction, and ? and ? are natural numbers.

Abstract: A particle beam irradiation apparatus including: a scanning unit configured to scan a particle beam; an electric current supply unit configured to supply an electric current to the scanning unit; and a scanning control unit configured to control the scanning unit by sending an electric current command value to the electric current supply unit, wherein a period of an operation clock of the scanning control unit and a period of an operation clock of the electric current supply unit are the same.

Abstract: A charged particle energy analyzer (10) includes inner and outer cylindrically symmetric electrodes (11,12) arranged coaxially on a longitudinal axis (z-z) of the analyzer. A position-sensitive detector (17) has a particle-receiving detection surface located off-axis, at a radial spacing from the longitudinal axis (z-z) less than the radius of the inner electrode (11). Methods of operating the charged particle energy analyzer in first and second order focussing modes are described. A position-sensitive detector (17) suitable for use in “parallel analyzers” is described (FIGS. 7 and 8).

Abstract: A radiation detector employed in a radiation detection apparatus and a fluorescent X-ray analyzer includes: a first circuit board on which a semiconductor radiation sensor is mounted and which is cooled by a Peltier device (an electronic cooling unit); and a second circuit board set apart from the first circuit board. A plurality of lead pins are joined to the second circuit board. Then, the first circuit board and the second circuit board are wire-bonded to each other. In comparison with conventional wire bonding performed onto the tips of lead pins, the work of connection is easy, the productivity is high, and the reliability of connection is high. Further, the second circuit board not requiring cooling is set apart so that cooling is concentrated on the first circuit board. This permits size reduction of the radiation detector.

Abstract: Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Abstract: In a particle beam therapy system which scans a particle beam and irradiates the particle beam to an irradiation position of an irradiation subject and has a dose monitoring device for measuring a dose of the particle beam and an ionization chamber smaller than the dose monitoring device, the ionization chamber measuring a dose of a particle beam passing through the dose monitoring device, the dose of the particle beam irradiated by the dose monitoring device is measured; the dose of the particle beam passing through the dose monitoring device is measured by the small ionization chamber; and a correction coefficient of the dose measured by the dose monitoring device corresponding to the irradiation position is found based on the dose of the particle beam measured by the small ionization chamber.

Abstract: A charged particle beam apparatus, which processes an object with a charged particle beam, includes: a detector having a detection surface, and configured to detect a charged particle beam incident on a partial region of the detection surface; and a controller configured to make target incident positions of charged particle beams, to be sequentially incident on the detection surface, different from each other.

Abstract: An electrostatic scanner to scan an ion beam in an ion implanter. The electrostatic scanner may include a first scan plate having a first inner surface that faces the ion beam, the first inner surface having a concave shape in a first plane that is perpendicular to a direction of propagation of the ion beam, and a second scan plate opposite the first scan plate separated by a gap to accept the ion beam the second scan plate having a second inner surface that faces the ion beam and a convex shape in the first plane, the first scan plate and second scan plate configured to generate an electrostatic field in the gap to scan the ion beam back and forth along a horizontal direction perpendicular to the direction of propagation of the ion beam.

Abstract: The invention provides a method to real time monitor the ion beam. Initially, turn on an ion implanter which has a wafer holder, a Faraday cup and a measurement device positioned close to a special portion of a pre-determined ion beam path of the ion beam, wherein the Faraday cup is positioned downstream the wafer holder and the measurement device is positioned upstream the wafer holder. Then, measure a first ion beam current received by the Faraday cup and a second ion beam current received by the measurement device. By continuously measuring the first and second ion beam current, the ion beam is real-time monitored even the Faraday cup is at least partially blocked during the period of moving the wafer holder across the ion beam. Accordingly, the on-going implantation process and the operation of the implanter can be adjusted.

Abstract: A multi charged particle beam writing apparatus includes a stage to mount a target object thereon and to be movable, an emission unit to emit a charged particle beam, an aperture member, in which a plurality of openings are formed, to produce multiple beams by letting a region including the whole of a plurality of openings be irradiated with the charged particle beam and letting portions of the charged particle beam respectively pass through a corresponding opening of a plurality of openings, a reduction optical system to reduce the multiple beams, and a doublet lens, arranged at the subsequent stage of the reduction optical system, in which a magnification is 1 and directions of magnetic fluxes are opposite.

Abstract: A multipole magnet for deflecting a beam of charged particles, comprising: a plurality of ferromagnetic poles arranged in a pole plane; a plurality of permanent magnets each having a magnetisation direction, and each being arranged to supply magnetomotive force to the plurality of ferromagnetic poles to produce a magnetic field along the pole plane in a beamline space between the poles; and a plurality of ferromagnetic flux conducting members arranged to channel magnetic flux from at least one of the plurality of permanent magnets; wherein the multipole magnet comprises an even number of ferromagnetic poles, each pole being arranged to diametrically oppose another of the poles in the pole plane along a pole axis, wherein each of the plurality of permanent magnets is associated with at least one of the plurality of poles and the magnetisation direction of each permanent magnet isorientated in the pole plane at an angle of at least 45° relative to the pole axis of the associated pole.

Abstract: A scanning apparatus which performs scan on an object with a charged particle beam includes: a blanking deflector configured to individually blank a plurality of charged particle beams based on control data; a scanning deflector configured to collectively deflect the plurality of charged particle beams to perform the scan; and a controller. The controller is configured to hold first data used to obtain error in a scanning amount and a scanning direction of the scanning deflector relative to a reference scanning amount and a reference scanning direction with respect to each of the plurality of charged particle beams, and to generate the control data based on the first data so that the scan is performed for a target region on the object.

Abstract: An ion transport apparatus for a mass- or ion-mobility-spectrometer comprises: (a) a plurality of strip electrodes in a series on a flat substrate; (b) an ion outlet aperture in the substrate disposed adjacent to a first one of the plurality of strip electrodes; (c) a cage electrode at least partially enclosing the plurality of strip electrodes and the ion outlet aperture; (d) a radio frequency (RF) voltage generator operable to supply an RF phase difference between each pair of adjacent electrodes; and (e) at least one DC voltage source operable to supply first and second DC voltages to the cage electrode and an extraction electrode and to supply respective DC bias voltages to each of the plurality of electrodes, wherein electrode strip widths of a series of the plurality of electrodes progressively increase away from the first one of the plurality of electrodes.

Abstract: In recent years, in association with the miniaturization and high integration of semiconductor manufacturing processes, there have been arising many cases where observation target portions are densely located. In such a case, if observation is performed using a conventional pre-charge technology, scanning with an electron beam in pre-charging are repeatedly executed, therefore the charge potential on the surface of a specimen exceeds the dielectric breakdown voltage. As a result, dielectric breakdown arises in areas where scanning with an electron beam are repeatedly executed. An object of the present invention is to provide a defect observation method that can reduce the risk of dielectric breakdown, and a charged particle beam apparatus that utilizes the method. In the present invention, when a specimen is observed with the use of a technology relevant to pre-charging, after executing a piece of control processing, plural images are photographed.

Abstract: The charged particle beam drawing apparatus of the present invention is a charged particle beam drawing apparatus that renders a pattern on a substrate using a charged particle beam and includes a detector that detects charge amount depending on the irradiation of the charged particle beam; first and second deflectors that are arranged along the direction of the irradiation of the charged particle beam and are capable of deflecting the charged particle beam; and a controller that controls the first and second deflectors, wherein the controller transmits a signal, which is used for switching the irradiation/nonirradiation of the charged particle beam to the detector, to the first and second deflectors at a predetermined timing, and adjusts the operation timing of the first and second deflectors based on the output of the detector depending on the signal.

Abstract: Methods and systems for detecting and/or collecting particles are disclosed. At least some of the particles are electrically charged by a charger (122). At least some of the charged particles are collected by a collector (140). Information indicating the number of the detected/collected particles based on measured electrical charges of the charged particles is obtained by a processor (170).

Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

Abstract: A method for acquiring a settling time according to an embodiment, includes writing a plurality of first patterns, arranged in positions apart from each other by a deflection movement amount, by using a DAC amplifier in which a settling time of the DAC amplifier is set to a first time to be a sufficient settling time; writing a plurality of second patterns, in a manner where corresponding first and second patterns are in a position adjacent, for each second time of different second times containing the sufficient settling time set as variable; measuring a width dimension of each of a plurality of combined patterns after adjacent first and second patterns are combined for the each second time set as variable; and acquiring the settling time of the DAC amplifier needed for deflection by the deflection movement amount, using the width dimensions.

Abstract: A retarding field analyzer uses the existing components of a charged particle beam system eliminating the need for inserting a separate retarding field analyzer device. Using components of the existing column reduces the time required to analyze the beam. Using the imaging capabilities of the existing column facilitates alignment of the beam with the analyzer.

Abstract: In order to provide a multipole measurement apparatus that can easily obtain table data for an aberration corrector that corrects the aberrations in a charged particle beam apparatus, the multipole measurement apparatus, which is provided with an optical system (10), a space into which an aberration corrector (6) is to be inserted, and a position detector (7), measures the relationship between the incident position and angle of a primary charged particle beam on the aberration corrector (6) at a plurality of points, the irradiation position upon the position detector (7), and a multipole, in a state of having a multipole field excited and in a state of not having a multipole field excited, so as to extract multipole components contained in the measurement executed in the state of having the multipole field excited.

Abstract: In a particle therapy treatment planning system for creating treatment plan data, the movement of a target (patient's affected area) is extracted from plural tomography images of the target, and the direction of scanning is determined by projecting the extracted movement on a scanning plane scanned by scanning magnets. Irradiation positions are arranged on straight lines parallel with the scanning direction making it possible to calculate a scanning path for causing scanning to be made mainly along the direction of movement of the target. The treatment planning system can thereby realize dose distribution with improved uniformity.

Abstract: Provided is a charged particle beam writing apparatus including a stage which a sample can be mounted thereon, an irradiation unit which emits a charged particle beam to be irradiated on the sample, and an aperture plate which includes a first opening portion to shape the charged particle beam. The aperture plate has a stacked structure of a first member and a second member, and a position of an end portion of the first opening portion in the second member is recessed from the position of the end portion of the first opening portion in the first member.

Abstract: The present invention provides an electron microscope device, comprising a scanning electron microscope 2 provided with scanning means 10 for scanning an electron beam and an electron detector 12 for detecting an electron 11 issued from a specimen 8 where the electron beam is projected for scanning, wherein a scanning electron image is acquired based on a detection result from the electron detector, wherein the electron detector comprises a fluorescent substance layer for performing photoelectric conversion, a wavelength filter giving restriction so that all or almost all of wavelength ranges of fluorescent lights from the fluorescent substance layer can be transmitted, and a wavelength detecting element for receiving the fluorescent light transmitted through the wavelength filter and for performing photoelectric conversion.

Abstract: A system for analyzing an electron beam including a circular electron beam diagnostic sensor adapted to receive the electron beam, the circular electron beam diagnostic sensor having a central axis; an annular sensor structure operatively connected to the circular electron beam diagnostic sensor, wherein the sensor structure receives the electron beam; a system for sweeping the electron beam radially outward from the central axis of the circular electron beam diagnostic sensor to the annular sensor structure wherein the electron beam is intercepted by the annular sensor structure; and a device for measuring the electron beam that is intercepted by the annular sensor structure.

Abstract: A charged particle beam irradiation system in which the energy, Bragg peak, and irradiation depth of a charged particle beam, with which a patient is to be irradiated, can be checked in real time just before actual irradiation. Just before the actual irradiation, by providing a high-speed steering magnet with 100% current, a checking beam is intentionally hit into a beam damper. By using a dosimeter and a dose measuring device in front thereof, extraction beam intensity is measured. By using a multi-layer beam monitor, a dose distribution thereof is measured. Accordingly, just before the actual irradiation, the energy, Bragg peak, and irradiation depth of the charged particle beam, with which the patient is to be irradiated, can be checked accurately and in real time. When the beam has a desired dose distribution as a result of checking, continuously, extraction control is performed.

Abstract: A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

Abstract: An apparatus includes an irradiation device configured to irradiate an object with charged particle beams, a measurement device configured to measure a characteristic of each of charged particle beams, and a controller. The measurement device includes a plate including knife edges, and a sensor configured to detect a charged particle beam incident thereon via the plate. The controller causes one charged particle beam, selected from the charged particle beams, to perform a scan relative to the measurement device so that the one charged particle beam traverses at least two knife edges among the plurality of knife edges, and to generate correction information for correcting a measurement error of the measurement device due to deformation of the plate, based on an output from the sensor upon the scan.

Abstract: The present invention provides a drawing apparatus which performs drawing on a substrate with a charged particle beam based on drawing data generated from pattern data representing a circuit pattern to be drawn on the substrate, and mark data representing a mark to be drawn on the substrate, the apparatus including an obtaining unit configured to obtain information associated with a positioning accuracy of the charged particle beam relative to the substrate, a determination unit configured to determine a drawing region for the mark based on the obtained information, and a generation unit configured to generate the drawing data by combining the pattern data and the mark data such that the mark is drawn in the determined drawing region.

Abstract: Metrology is performed using multiple registered images derived from one or more charged particle beams. Measurements combine features from one image that may not be visible in a second image to determine relationships that cannot be determined from a single image. In one embodiment, measurements use features from different element maps to determine a relationship between features, such as a distance or angle between two features in the first image at a location determined by a distance from a feature on the second image.

Abstract: There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.

Abstract: A scintillator 21 is disposed on an incidence side 23a of a photomultiplier 23. A scintillator cap 22 for introducing electrons into the scintillator 21 is disposed around the scintillator 21. The photomultiplier 23 is disposed in a sample chamber 17 with a vacuum seal formed around the photomultiplier 23. An insulating member 25 made of an opaque material is disposed between the scintillator cap 22 and the photomultiplier 23. The insulating member 25 provides insulation between the scintillator cap 22 and the photomultiplier 23. The lateral circumference of the photomultiplier 23 is covered to prevent light from entering the photomultiplier 23. A band filter 27 for blocking the illumination light of an optical microscope 30 is disposed between the scintillator 21 and the incidence side 23a of the photomultiplier 23 to make it possible to conduct simultaneous observations by using the electrons and the optical microscope.

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

Abstract: A charged particle beam drawing apparatus includes: a charged particle optical system; a substrate stage; an interferometer configured to measure a position of the stage in the direction of the optical axis of the charged particle optical system; a measuring device configured to measure a characteristic of the charged particle beam; and a controller configured to correct the measurement, obtained by the interferometer, using correction information. The controller is configured to cause first measurement as measurement by the interferometer and second measurement as measurement by the measuring device to be performed in parallel, and to obtain the correction information based on the first measurement and the second measurement obtained with respect to each of the plurality of positions.

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.