Abstract: Systems and methods of manipulating nano- and micrometer scale particles are described. The system generally includes an optical imaging system for acquiring an image of a sample of particles, a processor for analyzing the image, identifying a target particle in the image, and determining the lateral position of the target particle in the sample of particles; and a vacuum-based probe system including a moveable probe and a vacuum pump configured to apply a vacuum up through the probe. The processor provides instructions for moving the probe to the lateral position of the target particle, and instructions to apply a vacuum up through the probe such that the target particle is pulled away from the sample of particles and held against the tip of the moveable probe. Once the probe collects and holds a target particle against the tip thereof, the probe can be moved to relocated the target particle to a precise new location, such as on to a particle retrieval tray.

Abstract: A multi-beam writing method includes acquiring a plurality of deflection coordinates for deflecting a beam to each of a plurality of pixels which are in each beam pitch region of a plurality of beam pitch regions, a number of pixels to be exposed by a beam in the each beam pitch region during each of tracking control period performed such that the multiple beams collectively follow a movement of a stage, and a deflection movement amount of the multiple beams at a time of tracking reset for resetting a tracking starting position after each of the tracking control period has passed; and generating a deflection sequence defined using the plurality of deflection coordinates, the number of pixels to be exposed during each of the tracking control period, and the deflection movement amount of the multiple beams at the time of tracking reset.

Abstract: The charged particle beam irradiation apparatus includes: a focused ion beam column; an electron beam column; an electron detector; an image forming unit configured to form an observation image based on a signal output from the electron detector; and a control unit configured to repeatedly perform exposure control in which the focused ion beam column is controlled to expose a cross section of a multilayered sample toward a stacking direction with the focused ion beam, the control unit being configured to perform, every time exposure of an observation target layer at a cross section of the multilayered sample is detected in a process of repeatedly performing the exposure control, observation control in which the electron beam column is controlled to radiate the electron beam, and the image forming unit is controlled to form an observation image of the cross section of the multilayered sample.

Abstract: An irradiation target positioning device and method for creating radioisotopes utilizing linear particle beam accelerators or cyclotron accelerators. The device positions a target proximate to a liquid reservoir and vapor expansion chamber. The target may be in a solid phase. Heat produced within the target during irradiation can be absorbed by the liquid. The liquid may be heated to its vaporization temperature and vapor emitted into the vapor chamber. The vapor chamber may utilize a cooling mechanism, allowing the vapor to condense (second phase change). The radioactive product may diffuse into the liquid, thereby allowing the irradiated product to be conveyed out of the target structure in a liquid, solution or slurry. Multiple radioisotopes may be produced simultaneously out of the target material and liquid and separated later. The target material and irradiated product may be removed from the target surface by acid.

Abstract: An analyzing apparatus includes a sample chamber, a measurement apparatus, and a gas cluster ion beam apparatus. A cooling body separates an ionization chamber of the gas cluster ion beam apparatus from a nozzle support to prevent heat emitted by an ionization filament from being transmitted to the nozzle support, and a temperature of a source gas emitted from a nozzle is kept at a constant temperature by a gas heating device while a sputtering rate is kept constant. A pressure of the source gas supplied to the nozzle is kept at constant pressure by a pressure controller, and a size of gas cluster ions is kept at a constant value. Because the sputtering rate is a constant value, highly accurate depth surface profiling can be performed.

Abstract: 3D measurements of features on a workpiece, such as ball height, co-planarity, component thickness, or warpage, are determined. The system includes a broadband light source, a microlens array, a tunable color filter, a lens system, and a detector. The microlens array can focus a light beam to points in a focal plane of the microlens array. The tunable color filter can narrow the light beam to a band at a central wavelength. The lens system can provide longitudinal chromatic aberration whereby different wavelengths are imaged at different distances from the lens system.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Abstract: Insert elements that may be positioned within a high pressure plug valve. The elements have two or more recessed grooves formed around the fluid opening of the elements. The grooves are spaced from one another. A seal is placed in one and only one of the grooves. As wear occurs, the seal is relocated to one of the other grooves. Instead of a series of spaced grooves in a single insert element, a kit may be formed from two or more otherwise identical insert elements, each with a single recessed groove at a different position around the fluid opening.

Abstract: Systems for generating a proton beam include an electromagnetic radiation beam (e.g., a laser) that is directed onto an ion-generating target by optics to form the proton beam. A detector is configured to measure a laser-target interaction property, which a processor uses to produce a feedback signal that can be used to alter the proton beam by adjusting the source of the electromagnetic radiation beam, the optics, or a relative position or orientation of the electromagnetic radiation beam to the ion-generating target. By adjusting the laser-target interaction, the feedback can be used to control properties of the proton beam, such as the proton beam energy or flux. Such systems have certain advantages, including reducing the size, complexity, and cost of machines used to generate proton beams, while also improving their speed, precision, and configurability.

Abstract: A method is disclosed for irradiation planning for the irradiation of a moving target volume located in a body with a particle beam irradiation facility by means of rescanning, which method has the steps of defining the target volume in a reference condition of the motion, dividing the target volume among a plurality of target points that can be individually approached with a particle beam, calculating a nominal dose to be deposited in each of the target points of the target volume, defining a number of rescanning passes in which each of the target points of the target volume are approached, calculating a mean motion to be expected of the target points of the target volume based on a motion model, taking into account the mean motion to be expected of the target points of the target volume in the irradiation planning in such a manner that the deviation of the expected dose deposition from the nominal dose for each target point is determined, and the nominal dose for each target point is corrected on the basis

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Abstract: A shot data generation method includes inputting writing data for writing a pattern on a target object with multi charged particle beams, and generating shot data for each beam of the multi charged particle beams by converting the writing data and using one of a first code indicating a first irradiation time period having been set beforehand, a second code indicating an irradiation time period being zero, and a third code indicating neither the first irradiation time period nor the irradiation time period being zero.

Abstract: The invention provides an X-ray source having a generator for generating an electron beam, an accelerator for accelerating the generated electron beam in a desired direction, one or more magnetic elements for transporting portions of the electron beam in a more than one desired direction, and a shaped target made from a material having an atomic number lying within a predetermined range of values, the transported parts of the electron beam producing a fan beam of X rays upon striking the shaped target.

Abstract: An electron beam device having a tubular body of elongate shape with an electron exit window extending in the longitudinal direction of the tubular body. The tubular body is at least partly forming a vacuum chamber, the vacuum chamber comprising therein a cathode comprising a cathode housing having an elongate shape, and at least one electron generating filament and a control grid both extending along the elongate shape of the cathode housing. The control grid and the cathode housing are attached to each other by attachment mechanisms. Free longitudinal end portions of either the control grid or the cathode housing are bent in a direction towards each other to form bulge-like shapes for the formation of electron beam shaping electrodes. The invention is further comprising a method of manufacturing the electron beam device.

Abstract: A drawing apparatus includes: a plurality of charged particle optical systems arranged along a first direction; a storage configured to store drawing data shared by the plurality of charged particle optical systems with respect to each of sub-drawing regions obtained by dividing a drawing region on the substrate of each of the plurality of charged particle optical systems in the first direction; and a controller configured to determine a drawing region on the substrate by each of the plurality of charged particle optical systems as a set of the sub-drawing regions and control each of the plurality of charged particle optical systems based on a corresponding set of the sub-drawing regions.

Abstract: A scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition.

Abstract: An acquisition method of a charged particle beam deflection shape error includes writing a plurality of figure patterns, each smaller than a deflection region of a plurality of deflection regions, with charged particle beams, at a pitch different from an arrangement pitch of the plurality of deflection regions to be deflected by a deflector that deflects the charged particle beams, synthesizing writing positions of the plurality of figure patterns into one virtual deflection region of the same size as the deflection region, based on a positional relationship between the deflection region including a position where a figure pattern concerned of the plurality of figure patterns has been written and the position where the figure pattern concerned has been written, and calculating, to output, a shape error in the case of writing a pattern in the deflection region, using a synthesized writing position of each of the plurality of figure patterns.

Abstract: The invention relates to a charged particle beam lithography system comprising: a charged particle optical column arranged in a vacuum chamber for projecting a charged particle beam onto a target, wherein the column comprises deflecting means for deflecting the charged particle beam in a deflection direction, a target positioning device comprising a carrier for carrying the target, and a stage for carrying and moving the carrier along a first direction, wherein the first direction is different from the deflection direction, wherein the target positioning device comprises a first actuator for moving the stage in the first direction relative to the charged particle optical column, wherein the carrier is displaceably arranged on the stage and wherein the target positioning device comprises retaining means for retaining the carrier with respect to the stage in a first relative position.

Abstract: The invention relates to a charged-particle apparatus having a charged particle source with an optical axis; a magnetic immersion lens comprising a first lens pole and a configurable magnetic circuit; and a first sample stage movable with respect to the optical axis. The apparatus has a first configuration to position the sample, mounted on the first stage, with respect to the optical axis and a second configuration, having a second lens pole mounted on the first stage and intersecting the optical axis, equipped with a second sample stage to position the sample between the two lens poles and is movable with respect to the optical axis, causing the optical properties of the magnetic immersion lens to differ in the two configurations, and can, in the second configuration, be changed by positioning the second lens pole using the first stage, thus changing the magnetic circuit.

Abstract: The objective of the present invention is to eliminate noise caused by driving a ridge filter and to achieve a uniform dose distribution without making a patient sense discomfort or anxiety. There are provided a ridge filter having a thickness distribution in which the energy that a charged particle beam loses differs depending on the position thereon through which the charged particle beam passes, a deflector that deflects the charged particle beam, and a controller that controls the deflector in such a way that the charged particle beam passes through the thickness distribution of the ridge filter.

Abstract: A charged particle beam pattern writing method according to an embodiment, includes measuring a position displacement amount of a stage above which a target object is placed, in a rotation direction; and writing a pattern of a beam image on the target object above the stage while the beam image is rotated, by using a plurality of electrostatic lenses at least one of which is arranged in a magnetic field of each of the plurality of electromagnetic lenses whose magnetic fields are in opposite directions, to avoid a focus displacement of a charged particle beam passing through the plurality of electromagnetic lenses and to correct the position displacement amount measured, in the rotation direction of the stage.

Abstract: A method for acquiring a settling time according to an embodiment, includes writing a plurality of first patterns, arranged in positions apart from each other by a deflection movement amount, by using a DAC amplifier in which a settling time of the DAC amplifier is set to a first time to be a sufficient settling time; writing a plurality of second patterns, in a manner where corresponding first and second patterns are in a position adjacent, for each second time of different second times containing the sufficient settling time set as variable; measuring a width dimension of each of a plurality of combined patterns after adjacent first and second patterns are combined for the each second time set as variable; and acquiring the settling time of the DAC amplifier needed for deflection by the deflection movement amount, using the width dimensions.

Abstract: A charged particle beam irradiation apparatus includes: a transport line configured to transport a charged particle beam; and a rotating gantry rotatable around a rotation axis, wherein the transport line has an inclined section configured to make the charged particle beam advancing in a direction of the rotation axis advance to be inclined so as to become more distant from the rotation axis, and is formed so as to turn the charged particle beam advanced in the inclined section to a rotational direction of the rotation axis and bend the charged particle beam turned to the rotational direction to the rotation axis side, the rotating gantry is formed of a tubular body which can accommodate an irradiated body and supports the transport line, and the inclined section is disposed to pass through the inside of the tubular body of the rotating gantry.

Abstract: The invention pertains to a direct write lithography system comprising: A converter comprising an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each field emitter having an activation area; A plurality of individually controllable light sources, each light source arranged for activating one field emitter; Controller means for controlling each light source individually; Focusing means for focusing each electron beam from the field emitters with a diameter smaller than the diameter of a light source on an object plane.

Abstract: A gantry for administering proton beam therapy with improvements which reduce the size, weight, costs and radiation beam loss associated with proton beam therapy systems currently commercially available. The gantry utilizes achromatic superconducting multi-function electromagnet systems wherein the magnets can include dipoles and quadrupoles. The achromatic properties of the rampable magnet systems allow for ease of transmission of the beam whose energy is rapidly changed through a large range of different energies without changing of the strength of the magnetic fields or dipole settings. The magnets may be made with either low or high temperature superconductors. The gantry design further integrates beam scanning but keeps the gantry isocentric. A much greater fraction of the beam can be transmitted through the gantry than with current art, thereby reducing radiation shielding requirements and the demand put on the accelerator to produce large quantities of proton beam.

Abstract: The present invention provides a drawing apparatus which performs drawing on a substrate with a charged particle beam, the apparatus comprising a correction device configured to correct drawing data for controlling the drawing, and a drawing device configured to perform the drawing with the charged particle beam based on data corrected by the correction device, wherein the correction device is configured to perform geometrical correction for the drawing data to overlay a drawing region with a target region on the substrate, and then perform proximity effect correction for the drawing data having undergone the geometrical correction.

Abstract: A charged particle beam apparatus for processing an object using a charged particle beam includes a charged particle lens in which an array of apertures, through each of which a charged particle beam passes, is formed; a vacuum container which contains the charged particle lens; and a radiation source configured to generate an ionizing radiation; wherein the apparatus is configured to cause the radiation source to pass the ionizing radiation through the array of apertures in a state in which a pressure in the vacuum container is changing.

Abstract: A charged particle beam drawing apparatus has a drawing chamber including a movable stage which supports a mask, the mask being formed by applying a resist to an upper surface of a mask substrate, an optical column for applying a charged particle beam to draw patterns in the resist, a charged particle beam dose correction portion for correcting a dose of the charged particle beam applied from the optical column to the resist on the basis of proximity effect and fogging effect, and a conversion coefficient changing portion for changing a conversion coefficient on the basis of pattern density in the resist and a position in the resist, wherein the conversion coefficient is a ratio of an accumulation energy of the charged particle beam accumulated in the resist, to an accumulation dose of the charged particle beam accumulated in the resist.

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Abstract: The objective of the present invention is to eliminate noise caused by driving a ridge filter and to achieve a uniform dose distribution without making a patient sense discomfort or anxiety. There are provided a ridge filter having a thickness distribution in which the energy that a charged particle beam loses differs depending on the position thereon through which the charged particle beam passes, a deflector that deflects the charged particle beam, and a controller that controls the deflector in such a way that the charged particle beam passes through the thickness distribution of the ridge filter.

Abstract: It is an object of the present invention to provide a specimen observation method, an image processing device, and a charged-particle beam device which are preferable for selecting, based on an image acquired by an optical microscope, an image area that should be acquired in a charged-particle beam device the representative of which is an electron microscope. In the present invention, in order to accomplish the above-described object, there are provided a method and a device for determining the position for detection of charged particles by making the comparison between a stained optical microscope image and an elemental mapping image formed based on X-rays detected by irradiation with the charged-particle beam.

Abstract: A drawing apparatus include: a charged particle optical system configured to generate M×N charged particle beams; a limiting device configured to limit number of charged particle beams that the charged particle optical system emits toward a substrate; and a controller configured, if an abnormal beam that does not satisfy a use condition is present among the M×N charged particle beams, to control the limiting device such that only m rows, each of the m rows including n charged particle beams that are successive without intervention of the abnormal beam.

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Abstract: In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval.

Abstract: A charged particle beam drawing apparatus includes an electrostatic lens including an electrode member and configured to project the plurality of charged particle beams onto the substrate via the electrode member. In the electrode member are formed a plurality of first openings via which the plurality of charged particle beams pass, and a plurality of second openings different from the plurality of first openings, a total area of the plurality of second openings being not smaller than a total area of the plurality of first openings.

Abstract: Main deflection regions are arranged assuming that the positions of column cells are as designed, and adjacent main deflection regions are joined together to form a joined main deflection region. Then, a corrected main deflection region is arranged by correcting the position of each of the main deflection regions based on the actual positions of the column cells. After that, whether or not each of auxiliary deflection regions contained in the joined main deflection region overlaps with the corrected main deflection region is checked in predetermined order. Then, the auxiliary deflection regions overlapping with the corrected main deflection region are arranged in the order of detection thereby to yield auxiliary deflection region data.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: A method of calibrating the beam position in a charged-particle beam system starts with finding a focus deviation on the material surface for each point within a deflection field. A focus correction voltage VF necessary to cancel out the focus deviation is determined. A beam position deviation fi per unit focus correction voltage is found. The deflection voltage is corrected so as to cancel out the product fi·VF. The deflection voltage is corrected so as to cancel out the sum of the product fi·VF and the measured deflection field distortion while correcting the focus based on the voltage VF.

Abstract: An irradiation field forming device for forming an irradiation field when a specimen is irradiated with a charged particle beam generated by an accelerator, the irradiation field forming device includes: a range shifter arranged on a beam axis of the charged particle beam for regulating an irradiation depth of the charged particle beam; and two or more than two converging electromagnets arranged in the downstream of the range shifter for regulating a beam diameter of the charged particle beam which is enlarged by the range shifter to a constant value.

Abstract: Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

Abstract: It is an object of the present invention to provide a specimen observation method, an image processing device, and a charged-particle beam device which are preferable for selecting, based on an image acquired by an optical microscope, an image area that should be acquired in a charged-particle beam device the representative of which is an electron microscope. In the present invention, in order to accomplish the above-described object, there are provided a method and a device for determining the position for detection of charged particles by making the comparison between a stained optical microscope image and an elemental mapping image formed based on X-rays detected by irradiation with the charged-particle beam.

Abstract: A direct write lithography system. The system includes a converter having an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each filed emitter having an activation area. A plurality of individually controllable light sources, each light source arranged for activating one field emitter. A controller controls each light source individually. Each electron beam is focused from the field emitters with a diameter smaller than the diameter of a light source on an object plane.

Abstract: The invention relates to a charged particle beam lithography system comprising: a charged particle optical column arranged in a vacuum chamber for projecting a charged particle beam onto a target, wherein the column comprises deflecting means for deflecting the charged particle beam in a deflection direction, a target positioning device comprising a carrier for carrying the target, and a stage for carrying and moving the carrier along a first direction, wherein the first direction is different from the deflection direction, wherein the target positioning device comprises a first actuator for moving the stage in the first direction relative to the charged particle optical column, wherein the carrier is displaceably arranged on the stage and wherein the target positioning device comprises retaining means for retaining the carrier with respect to the stage in a first relative position.

Abstract: The present invention relates to a particle-optical component comprising a first multi-aperture plate, and a second multi-aperture plate forming a gap between them; wherein a plurality of apertures of the first multi-aperture plate is arranged such that each aperture of the plurality of apertures of the first multi-aperture plate is aligned with a corresponding aperture of a plurality of apertures of the second multi-aperture plate; and wherein the gap has a first width at a first location and a second width at a second location and wherein the second width is by at least 5% greater than the first width. In addition, the present invention pertains to charged particle systems and arrangements comprising such components and methods of manufacturing multi aperture plates having a curved surface.

Abstract: An ion doping apparatus and a doping method are disclosed. In one embodiment, the apparatus includes a chamber, and a substrate driving unit configured to support and move a substrate in the chamber, wherein the substrate has a plurality of long sides and a plurality of short sides. The apparatus further includes an ion beam generator configured to generate and provide an ion beam having a width smaller than the length of the short sides of the substrate, wherein the substrate driving unit is further configured to move the substrate substantially perpendicular to the width direction of the ion beam.

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Abstract: The invention relates to a charged particle based lithography system for projecting an image on a target using a plurality of charged particle beamlets for transferring said image to said target, said system comprising a charged particle column comprising: an electron optical subassembly comprising a charged particle source, a collimator lens, an aperture array, a blanking means and a beamstop for generating a plurality of charged particle beamlets; and a projector for projecting said plurality of charged particle beamlets on said target; said projector being moveably included in the system by means of at least one projector actuator for moving said projector relative to said electron optical subassembly; said projector actuator being included for mechanically actuating said projector and providing said projector with at least one degree of freedom of movement; wherein said degree of freedom relates to a movement around an optical axis of the system.

Abstract: A method for measuring a demagnification of a charged particle beam exposure apparatus includes measuring a first stage position of a mask stage in accordance with a mask stage coordinate system, irradiating a first charged particle beam to a first irradiation position on a specimen through the opening portion of the mask, measuring the first irradiation position in accordance with a specimen stage coordinate system, moving the mask stage to a second stage position, measuring the second stage position of the mask stage, irradiating a second charged particle beam to a second irradiation position on the specimen through the opening portion of the mask measuring the second irradiation position in accordance with the specimen stage coordinate system, and calculating a demagnification of the charged particle beam exposure apparatus from the first and second stage positions and the first and second irradiation positions.

Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Abstract: An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.