Abstract: A re-size circuit extracts the bit data of a pattern to be drawn, at a specific address and its adjacent addresses of a pattern to be drawn, from a bit map memory storing LSI pattern data. For the Data at the adjacent addresses, either "0" or "1" re-size parameter data is set according to the contents of the re-size directions. The thickness of the pattern is altered by means of the logical operation of the data at the adjacent addresses and the re-size parameter data.

Abstract: An electron beam gun generates an electron beam directed at a target. The gun comprises electrodes for creating an electric field along the direction of beam travel and focusing coils for creating a magnetic field along the direction of beam travel. The electrodes include a plurality of members each having a beam-shaping aperture therein for passage of the beam substantially without interception of the electrons in the beam. The electrodes and focusing coils are disposed for accelerating electrons in the beam in non-parallel paths through the beam-shaping apertures and for converging the electrons in the beam in at least one cross-sectional dimension of the beam to minimize that dimension at the target.

Abstract: The invention relates to an apparatus for irradiating material by an electron beam. The apparatus comprises guidance means for placing the material on the path of the beam, an electron gun provided in a tight enclosure having a shape with a symmetry or revolution with respect to an axis, an electron-emitting filament located in the axis of the enclosure, as well as a Wehnelt electrode surrounding the filament. It is provided with a first circular slot for concentrating electrons in the vicinity of the said slot and an electron accelerating electrode surrounding the Wehnelt electrode and having a second circular slot facing the first slot. The enclosure comprises a tightly closed circular window which is transparent to the electrons and which faces the two slots.

Abstract: An electron beam irradiation apparatus comprising an electron beam source which is capable of generating an electron beam and irradiating in one direction, a first magnet member having a through hole and being disposed to allow the electron beam irradiated from said electron beam source to pass therethrough, a second magnet member which is disposed opposing to the first magnet member through a gap which allows a target to pass therethrough and has the polarity different from that of the first magnet member, a target supporting/shifting means which allows the target to pass through said gap and cooling means which cools said both magnet members. A base material coated with a paste of magnetic particles is used as the target and vertical orientation of the magnetic particles and hardening of the paste can be simultaneously conducted.

Abstract: An apparatus and system is provided for utilizing an electron beam machine to selectively and alternatively irradiate materials with electrons of X-rays; the conversion between electron radiation and X-radiation being achieved by interposing a plate of low Z material such as aluminum between the beam and the material to be irradiated, the plate having its surface facing the electron beam covered with an X-ray generating or high Z material. The plate serves as a mechanical support for the high Z material, an electron capture body and to some extent as a heat sink. Materials to be irradiated are disposed in a cart and are conveyed under the beam with the plate being interposed whenever a material to receive X-rays passes thereunder; the carts being employed to readily permit multiple passes of the material to be treated with X-rays under the beam whereby heat build up in the X-ray generating target placed over each cart may be maintained at acceptable levels.

Abstract: This disclosure is concerned with the use of fine line converged electron beams of high aspect ratio for effecting physical, chemical, mechanical and other changes in the surface of objects, and also volume effects, including applications, for example, to semiconductor and other materials surface modification technology, annealing, welding, etching, polishing, cutting, curing and other surface and volume alteration.

Abstract: Method and apparatus for wide angle beam scanning to internally irradiate hollow objects with a beam of charged particles utilizes a scanning deflection device to scan the beam within the object to be irradiated through an angle of deflection greater than 90.degree. from the axis along which the beam is received by the scanning deflection device. The object to be irradiated can be rotated about the scanning deflection device or the scanning deflection device can be rotated to circumferentially irradiate the object, and the object is translated relative to the scanning deflection device to irradiate an entire object, such as a tube, a container having a closed end or an object having a toroidal configuration, such as a pneumatic tire.

Abstract: An inerting chamber and enclosure or access member are formed such that the escutcheon plate or outer member of the closure is hinged and the same hinges may be utilized to both swing the escutcheon plate out for cleaning and servicing of the chamber and also if the fastening devices for the access plate are loosened may be utilized to swing the entire inerting chamber and access plate out of the way for servicing of the electron beam unit.

Abstract: A method of electron beam exposure for directly writing patterns on chips of a semiconductor wafer with an electron beam, in which each of the chips is sectioned into a plurality of exposure fields, and at least one alignment mark is formed in only one exposure field of eachg chip. The alignment of the entire wafer with the electron beam is preliminarily adjusted, the alignment of a particular chip with the electron beam is adjusted relying on the alignment mark on the chips, and the exposure fields of the desired chip are successively exposed to the electron beam so that the entire chip is exposed. The remaining chips are successively adjusted in alignment and exposed in the same manner as defined above, whereby the entire wafer is exposed.

Abstract: An electron flood exposure apparatus is disclosed which is comprised of an electron gun for providing an electron beam; a dispersing means for converting the electron beam into an electron flood; a post dispersion collimation and acceleration grid; and a target holder for holding a microlithographic resist which is to be exposed by the flood of electrons after collimation and acceleration by the acceleration grid.

Abstract: An electron beam irradiation apparatus which comprises: a base plate of a magnetically permeable material; a movable stage mounted on said base plate; an upper magnetic shield plate having an electron beam passage hole disposed above said stage; a side member of high permeability which magnetically interconnects said base plate and said upper shield plate, and; a magnetic shield cover plate which covers the table surface of said stage.

Abstract: A method and device for correcting errors and setting the focus of an electron optical condenser of a microprojector which condenser produces a bundle of axially parallel electron rays for illuminating a large surface transmission mask to create an image which is projected by means of an electron optical lens system on a surface of a wafer characterized by placing an annular field stop or diaphragm which passes a bundle of rays having a ring-shaped or annular cross section and recording the image in a plane preferably adjacent the surface of the wafer. The recording can be accomplished by utilizing a photographic plate or by utilizing a detector arrangement. When the image on the recording unit is the same size and shape as the annular field stop, then the electron optical condenser has the correct focal length and the source is disposed on the front focal plane.

Abstract: Apparatus for directing a beam at a workpiece in vacuum has a special planar sliding multiple seal arrangement that enables repeated scanning movement of the workpiece across the beam. The seal includes a planar slide plate and an opposed relatively movable seal support member, also preferrably a plate parallel to the slide plate. Aligned apertures are in the members, one of which is larger in the direction of relative movement than the other enabling the relative movement while maintaining the alignment. A plurality of concentric resilient seals, which may be of oval race track configuration, bear with a sliding contact against the planar surface, these seals preferably comprising composites of a thin high density polyethylene seal element and a soft and only milding compressed backing element that applies a feather-light seal pressure. Between-seal pumping is provided to reduce the differential pressure across any seal to to remove gas that may leak into the space.

Abstract: A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.

Abstract: An electron beam with a cross-section shaped by two aperture plates and a deflector sequentially irradiates pattern areas within a plurality of unit squares on a workpiece in the X and Y directions. The workpiece is continuously shifted in the Y direction by a mechanical means, the amount of workpiece shift being detected to control the deflector and the shaping of said beam cross-section.

Abstract: Electric pulses are counted, and are converted into an electric signal proportional to the number of the counted pulses. An electron beam for irradiating a sample is deflected in response to the electric signal. The counting can be voluntarily stopped with a switch.

Abstract: Tellurium powder in improved targets is bombarded with a cyclotron beam to produce .sup.123 Xe. Flowing gas streams carry the .sup.123 Xe through one cold trap which removes contaminants to another cold trap which removes .sup.123 Xe that subsequently decays to .sup.123 I.During this bombardment energy is deposited in the target material causing its temperature to rise. Some of the tellurium vaporizes and subsequently condenses on surfaces that are cooler than the vaporization temperature. Provision is made for the repeated bombardment of this condensed tellurium.

Abstract: A method and an apparatus for controlling the angle of incidence of low-egy, high current density electron beams are disclosed. The apparatus includes a current generating diode arrangement with a mesh anode for producing a drifting electron beam. An auxiliary grounded screen electrode is placed between the anode and a target for controlling the average angle of incidence of electrons in the drifting electron beam. According to the method of the present invention, movement of the auxiliary screen electrode relative to the target and the anode permits reliable and reproducible adjustment of the average angle of incidence of the electrons in low energy, high current density relativistic electron beams.

Abstract: In an ion beam separator for use in ion implantation, the ion beam is scanned in both X and Y directions over a target. `Y` scan is achieved by electrostatic beam deflection located close to the region where the ion beam exits from the influence of the deflecting magnet. `X` scan is preferably provided by rectilinear target movement. Beam width or intensity control is achieved using a rotatable slit. Targets are transferred sequentially across the beam from a pack on one side and are re-stacked on the other side of the beam after exposure.

Abstract: Bombarding a cesium heat pipe with high energy particles causes a spallation reaction which produces vapors of .sup.123 Xe and contaminants. The contaminants are removed in a dry ice cold trap while the .sup.123 Xe condenses in a liquid nitrogen trap where it decays to .sup.123.sub.I.

Abstract: An electron beam with a cross-section shaped by two aperture plates and a deflector sequentially irradiates pattern areas within a plurality of unit squares on a workpiece in the X and Y directions. The workpiece is continuously shifted in the Y direction by a mechanical means, the amount of workpiece shift being detected to control the deflector and the shaping of said beam cross-section.