Abstract: In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.

Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

Abstract: A high pressure microplasma source operating in a normal glow discharge regime is used to produce a cold bright focused beam of Xe+ and/or Xe2+ ions having ion temperature of the order of 0.5-1 eV and a current density on the order of 0.1-1 A/cm2 or higher for focused ion beam applications.

Abstract: Self-balancing, corona discharge for the stable production of electrically balanced and ultra-clean ionized gas streams is disclosed. This result is achieved by promoting the electronic conversion of free electrons into negative ions without adding oxygen or another electronegative gas to the gas stream. The invention may be used with electronegative and/or electropositive or noble gas streams and may include the use of a closed loop corona discharge control system.

Abstract: In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.

Abstract: A multi mode ion implantation system, which operates in both an arc discharge mode of operation and a non arc discharge mode of operation, is described. The multi mode ion implantation system may consist of dual ionization volumes forming two ion sources, an arc discharge source and a non arc discharge source, in tandem. The dual chambers and the two sources feed the ion implantation system with material of various species for multi mode, an arc discharge and a non arc discharge operation.

Abstract: A cathode sub-assembly is comprised of a retainer, a cathode and a collar, each of which has smooth unthreaded surfaces that slidably engage each other. A shield serves to hold the sub-assembly in a support plate. The cathode projects from the sub-assembly into an arc chamber with a tortuous path created therebetween for passage of a plasma flow.

Abstract: The current invention involves a desorption corona beam ionization source/device for analyzing samples under atmospheric pressure without sample pretreatment. It includes a gas source, a gas flow tube, a gas flow heater, a metal tube, a DC power supply and a sample support/holder for placing the samples. A visible corona beam is formed at a sharply pointed tip at the exit of the metal tube when a stream of inert gas flows through the metal tube that is applied with a high DC voltage. The gas is heated for desorbing the analyte from solid samples and the desorbed species are ionized by the energized particles embedded in the corona beam. The ions formed are then transferred through an adjacent inlet into a mass spectrometer or other devices capable of analyzing ions. Visibility of the corona beam in the current invention greatly facilitates pinpointing a sampling area on the analyte and also makes profiling of sample surfaces possible.

Abstract: The invention provides an ionization source for mass spectrometers named Universal Soft Ionization Source (USIS), wherein the ionization chamber combines various physical effects including InfraRed and UltraViolet normal or laser light, ultrasound, electrostatic potential and differential temperature to analyze polar, non-polar, low, medium or high molecular weight molecules, in order to ionize a variety of compounds.

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract: An apparatus and method are for disinfection and purification of a liquid, gaseous or solid phase, or a mixture thereof. The apparatus includes: a central electrode, a dielectric layer adjacent to the electrode, a first area adjacent to the dielectric layer, and is configured to introduce a first medium into the first area, a second area adjacent to the first area. The apparatus is also configured to introduce a second medium into the second area, and for creating a plasma in the first medium, while the first medium is present in the first area, by applying a voltage between the first electrode and a second electrode. An injector injects the plasma into the second area, in order to be mixed with the second medium.

Abstract: An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.

Abstract: An ionizer includes a fan for blowing air, the fan being provided in an air blowing port which opens in a case, and a plurality of discharge electrodes for generating positive and negative ions by corona discharge, the discharge electrodes being provided in the case at positions facing the air blowing port. The ionizer also includes a plurality of discharge electrode pairs each constituted by two discharge electrodes for generating ions of different polarities. When a tip-center distance denotes a distance from the electrode tip to the center of the air blowing port, the tip-center distances of the two discharge electrodes in the discharge electrode pairs are different from each other.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A cathode sub-assembly is comprised of a retainer, a cathode and a collar, each of which has smooth unthreaded surfaces that slidably engage each other. A shield serves to hold the sub-assembly in a support plate. The cathode projects from the sub-assembly into an arc chamber with a tortuous path created therebetween for passage of a plasma flow.

Abstract: The current invention involves a desorption corona beam ionization source/device for analyzing samples under atmospheric pressure without sample pretreatment. It includes a gas source, a gas flow tube, a gas flow heater, a metal tube, a DC power supply and a sample support/holder for placing the samples. A visible corona beam is formed at a sharply pointed tip at the exit of the metal tube when a stream of inert gas flows through the metal tube that is applied with a high DC voltage. The gas is heated for desorbing the analyte from solid samples and the desorbed species are ionized by the energized particles embedded in the corona beam. The ions formed are then transferred through an adjacent inlet into a mass spectrometer or other devices capable of analyzing ions. Visibility of the corona beam in the current invention greatly facilitates pinpointing a sampling area on the analyte and also makes profiling of sample surfaces possible.

Abstract: An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.

Abstract: An apparatus for producing ions can include an emitter having a first end and a second end. The emitter can be coated with an ionic liquid room-temperature molten salt. The apparatus can also include a power supply and a first electrode disposed downstream relative to the first end of the emitter and electrically connected to a first lead of the power supply. The apparatus can also include a second electrode disposed downstream relative to the second end of the emitter and electrically connected to a second lead of the power supply.

Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

Abstract: Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract: A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.

Abstract: Disclosed is an ion diffusing apparatus that can realize easy replacement of an ion generator and can maintain a stable ion supplying capability. Also disclosed is an ion generating cartridge. In the ion diffusing apparatus, the ion generator is so configured that the generator is detachable for easy maintenance, and can deliver the positive ions and negative ions to a position remote from the apparatus in a room while uniformly generating positive ions and negative ions. An ion diffusing apparatus (1) includes an ion generator housing part. An ion generator (10) is housed in the ion generator housing part in such a posture that a positive ion generating part (13A) and a negative ion generating part (13B) are provided separately from each other in a direction crossing a flow direction of a stream from a fan (3), and an ion generating surface (11a) is exposed so as to conform to a stream flow surface of a stream flow passage extended from the fan (3) to a supply opening (4).

Abstract: A method for ionizing and desorbing a sample for analysis includes energizing a first and second electrode to produce a glow discharge at atmospheric pressure. The method further includes supplying a carrier gas to at least a portion of the glow discharge to create effluents thereof. The method further includes conducting the effluents of the glow discharge to the sample to ionize and desorb the sample for analysis. An associated apparatus is also disclosed.

Abstract: A proposed indirect heated cathode has an inner tubular shell inserted into an arc chamber for creating plasma by a filament, which is disposed in the inner tubular shell and then covered by an end cap. There are at least two outstanding talons disposed on the end surface of the inner tubular shell, and a step gap is configured on between the end surface of the inner tubular shell and the outstanding talons. The end cap can be lodged into the step gap, and fixed. Therefore, the end cap can be easily uncovered from the end of the inner tubular shell, as a result to simplify the replacement of the filament.

Abstract: An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

Abstract: A focused ion beam device is described comprising a gas field ion source with an emitter emitting an ion beam including ions of gas, an ion beam column and a beam current control loop comprising a beam current measurement device. Furthermore, the focused ion beam device may have a sample charge control comprising measuring the sample charge. A method of operating a focused ion beam device is provided comprising applying a voltage between an emitter an electrode, applying gas to the emitter, emitting ions of a gas from the emitter and controlling a beam current by measuring the beam current with a beam current measurement device.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber, the cathode holder positioned such that a surface thereof opposes or surrounds a side surface of a cathode. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned on the same plane as, outward from, or inward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, a surface of the first heat shield positioned to oppose or surround the side surface of the cathode. At a rear end of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A liquid in which fine solid Sn particles are dispersed in a resin is accommodated inside the heated tank 4. The resin pressurized by a pressurizing pump is conducted to a nozzle 1, so that a liquid-form resin is caused to jet from the tip end of the nozzle 1 that is disposed inside a vacuum chamber 7. The liquid-form resin which is caused to jet from the nozzle 1 assumes a spherical shape as a result of surface tension, and is solidified by being cooled in a vacuum, so that a solid-form target 2 is formed. A laser introduction window 10 used for the introduction of laser light is formed in the vacuum chamber 7, and laser light generated from a laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and conducted into the vacuum chamber 7, so that the target is converted into a plasma, thus generating EUV light.

Abstract: The present invention provides a charged particle beam device for irradiating a specimen with ions. The charged particle beam device comprises a gas field ion source unit for generating a beam of ions, the gas field ion source having an emitter unit having an emitter unit tip; and a gas supply system for directing gas to the emitter unit tip. The gas supply system comprises an array of capillary tubes. Further, the present invention provides a method for irradiating a specimen with ions by operating a charged particle beam device having a gas field ion source, wherein the method comprises the step of directing a gas flow to an emitter unit tip, wherein the gas flow has a gas beam aperture angle of 3° or less.

Abstract: An arc chamber for an ion implantation system includes an exit aperture positioned at a wall of the arc chamber, filaments respectively positioned at two opposing sides within the arc chamber, and repeller structures respectively positioned at two opposing walls within the arc chamber between the filaments and the arc chamber. The repeller structure includes a repeller substrate with a screw axis for fitting the repeller structure to the arc chamber, an insulator positioned underneath the repeller substrate providing an electrical isolation between the repeller substrate and the arc chamber, and a conductive spacer covering a portion of the insulator positioned in between the insulator and the arc chamber.

Abstract: The ionizer includes a nozzle having a discharge electrode for inducing corona discharge by application of high voltage to eject ions, an emission port for emitting supplied gas together with the ejected ions, and a gas channel for guiding supplied gas to the emission port. Herein, a velocity of flow of the gas immediately after emission from the emission port exceeds a velocity of sound, and a gas pressure at the emission port is not less than an atmospheric pressure. The gas channel has a throat part for narrowing the gas channel such that a channel area gradually decreases, and a ratio of the atmospheric pressure to a gas pressure at a position where the channel area does not vary, the position being located forward of the throat part, is not more than 0.528.

Abstract: A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter.

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract: Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.

Abstract: This energy contamination monitor has an ionization apparatus configured to ionize the neutral particles in an ion beam. Neutral particles are ionized, separated based at least in part upon different transit times over a distance, and measured with the Faraday electrode based at least in part upon the different transit times. The energy contamination monitor can distinguish between fast and slow neutral particles.

Abstract: The present invention concerns a system for the focusing and/or a collimation of an ion beam, in particular a beam of accelerated protons, wherein the system has a lens with a lens body that is permeable to the ion beam, wherein means for the generation of an in particular electrostatic field, propagating within the lens body and focusing the ion beam, are provided, wherein the lens body has a wall of low thickness, wherein the means for the field generation comprise a source of electromagnetic radiation, whose emitted beam is directed onto the outer side of the wall of the lens body, wherein the thickness of the wall and the quality of the electromagnetic radiation is chosen such that the radiation generates free electrons that emerge from the wall and accumulate on the exit side of the wall in an electron cloud.

Abstract: An ion gun 11 supplies an Ar gas into a main body 111 from a gas inlet 114, causes DC hot cathode discharge between a filament 113 and an anode 112 to generate Ar plasma. Next, a voltage gradient is applied to separated accelerator grids 116a, 116b having a bi-separated configuration in an ion ejecting direction. The each potential of the separated accelerator grids 116a, 116b is independently controlled by independently setting accelerator control switches 121a, 121b on or off to change the potential of that of the separated accelerator grids 116a, 116b which corresponds to an ion beam to be disabled.

Abstract: An ion source has an arc chamber with an electron-emitting element and a repeller. A manifold assembly defines a cavity and a gas outlet configured to allow gas flow to the arc chamber. This gas outlet is closer to the repeller than the electron-emitting element. In one embodiment, the ion source has a first crucible and a second crucible. The first crucible and the second crucible are connected to the manifold assembly. In one instance, the crucibles have tamper-resistant features.

Abstract: A multi mode ion implantation system, which operates in both an arc discharge mode of operation and a non arc discharge mode of operation, is described. The multi mode ion implantation system may consist of dual ionization volumes forming two ion sources, an arc discharge source and a non arc discharge source, in tandem. The dual chambers and the two sources feed the ion implantation system with material of various species for multi mode, an arc discharge and a non arc discharge operation.

Abstract: A low-power atmospheric pressure plasma source, comprising a plasma-forming region for injection of a plasma-forming gas; an excitation region for injection of a source of reactive species downstream of the plasma-forming region; and a narrow converging plasma exit for producing a narrow plasma jet, the source being electrically decoupled from a substrate under treatment by the plasma jet. The present source may find applications for example for skin treatment, etching of skin cancer cells, detachment of cells, removal of skin pigmentation and deposition of temporary organic films.

Abstract: The ion implanter has: an ion source which generates an ion beam; electron beam sources which emit an electron beam to be scanned in the Y direction in the ion source; a power source for the sources; an ion beam monitor which, in the vicinity of an implanting position, measures a Y-direction ion beam current density distribution of the ion beam; and a controlling device. The controlling device has a function of homogenizing the Y-direction ion beam current density distribution measured by the monitor, by, while controlling the power sources on the basis of measurement data of the monitor, increasing a scanning speed of the electron beam in a position corresponding to a monitor point where an ion beam current density measured by the monitor is large; and decreasing the scanning speed of the electron beam in a position corresponding to a monitor point where the measured ion beam current density is small.

Abstract: An ion source element includes a cold cathode, a grid electrode, and an ion accelerator. The cold cathode, the grid electrode, and the ion accelerator are arranged in that order and are electrically separated from one another. A space between the cold cathode and the grid electrode is essentially smaller than a mean free path of electrons at an operating pressure. The ion source element is thus stable and suitable for various applications.