Arc Type Patents (Class 250/426)
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Patent number: 7598500Abstract: An ion source is capable of generating and/or emitting an ion beam which may be used to deposit a layer on a substrate or to perform other functions. In certain example embodiments, techniques for reducing the costs associated with producing ion sources and/or elements thereof are provided. Such techniques may include, for example, forming the inner and/or outer cathode(s) from 1018 mild steel and/or segmented pieces. Such techniques also or instead include, for example, forming the ion source body from a single steel U-channel, or from segmented pieces making up the same. These techniques may be used alone or in various combinations.Type: GrantFiled: September 19, 2006Date of Patent: October 6, 2009Assignee: Guardian Industries Corp.Inventors: Nestor P. Murphy, David E. Rock, Hugh A. Walton, Maximo Frati
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Patent number: 7589328Abstract: A focused ion beam device is described. The device includes an ion beam column including an enclosure for housing an emitter with an emitter area for generating ions, a first gas inlet adapted to introduce a first gas to the emitter area, a second gas inlet adapted to introduce a second gas different from the first gas to the emitter area, and a switching unit adapted to switch between introducing the first gas and introducing the second gas.Type: GrantFiled: October 26, 2007Date of Patent: September 15, 2009Assignee: ICT, Integrated Circuit Testing Gesellschaft fur Halbleiterpruftechnik mbHInventors: Juergen Frosien, Dieter Winkler
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Patent number: 7586101Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.Type: GrantFiled: December 22, 2004Date of Patent: September 8, 2009Assignee: Applied Materials, Inc.Inventors: Adrian John Murrell, Richard David Goldberg, Christopher J. S. Burgess, David George Armour, Erik J. H. Collart
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Patent number: 7566883Abstract: One or more thermal transfer sheets are easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal transfer sheets, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal transfer sheets may be interposed between the consumable components within the anode assembly. The thermal transfer sheets may be thermally conductive and either electrically insulating or conductive.Type: GrantFiled: January 12, 2007Date of Patent: July 28, 2009Assignee: Veeco Instruments, Inc.Inventors: David M. Burtner, Scott A. Townsend, Daniel E. Siegfried
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Patent number: 7557359Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: July 7, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7557358Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: July 7, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7557361Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: July 7, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7557360Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: July 7, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill, Lars Markwort, Dirk Aderhold
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Patent number: 7554097Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: June 30, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7554096Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: June 30, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7521693Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: April 21, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill, Shawn McVey, Johannes Bihr
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Patent number: 7518122Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: April 14, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill, Ulrich Mantz, Michael Steigerwald
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Patent number: 7518124Abstract: Monotomic dopant ions for ion implantation are supplied from vapour of a species containing plural atoms of the desired dopant. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the vapour species to produce monatomic dopant ions in the plasma for implantation.Type: GrantFiled: September 28, 2006Date of Patent: April 14, 2009Assignee: Applied Materials, Inc.Inventor: Richard David Goldberg
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Patent number: 7518085Abstract: A plasma thruster with a cylindrical inner and cylindrical outer electrode generates plasma particles from the application of energy stored in an inductor to a surface suitable for the formation of a plasma and expansion of plasma particles. The plasma production results in the generation of charged particles suitable for generating a reaction force, and the charged particles are guided by a magnetic field produced by the same inductor used to store the energy used to form the plasma.Type: GrantFiled: January 31, 2006Date of Patent: April 14, 2009Assignee: Alameda Applied Sciences Corp.Inventor: Mahadevan Krishnan
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Patent number: 7511279Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: March 31, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7504639Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: March 17, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7498586Abstract: A gridless ion source operates from a control system (201) that generates an anode voltage (215) comprising a mains rectified signal such that the anode voltage modulates between a first voltage above a threshold and a second voltage below the threshold. The mains rectified signal is provided by transformer (210) receiving a mains input (211). The output of the transformer (213) is rectified by a bridge rectifier (214). In preferred embodiments, the threshold is an ionization threshold such that the ion current is initiated and extinguished in every cycle.Type: GrantFiled: August 13, 2004Date of Patent: March 3, 2009Assignee: Saintech Pty, Ltd.Inventors: Wayne Sainty, William Vince Waller
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Patent number: 7495232Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: February 24, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill
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Patent number: 7491947Abstract: A technique improving performance and lifetime of indirectly heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an indirectly heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0.5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.Type: GrantFiled: August 16, 2006Date of Patent: February 17, 2009Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Eric R. Cobb, Russell J. Low, Craig R. Chaney, Leo V. Klos
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Patent number: 7488952Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: February 10, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill, Lars Markwort, Dirk Aderhold
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Patent number: 7485854Abstract: A sampling device, for example a sampling valve, is disclosed for introduction of samples into an analysis system. The sampling device comprises a turning element provided with a sampling area. The sampling area is configured to retain samples to be analysed. The turning element is arranged for movement between a first position where the sampling area is exposed to material to be sampled for collection of samples and a second position where samples are released for use by the analysis system.Type: GrantFiled: May 23, 2006Date of Patent: February 3, 2009Assignees: University of Helsinki, Department of Chemistry, Laboratory of Analytical Chemistry, University of Helsinki, Department of Physical Science, division of Atmospheric Sciences, Finnish Meteorological InstututeInventors: Kari Hartonen, Kari Kuuspalo, Heikki Lihavainen, Pasi Aalto, Markku Rasilainen, Marja-Liisa Riekkola, Markku Kulmala, Yrjo Viisanën
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Patent number: 7485873Abstract: Ion sources, systems and methods are disclosed.Type: GrantFiled: November 15, 2006Date of Patent: February 3, 2009Assignee: ALIS CorporationInventors: Billy W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill, Klaus Edinger, Lars Markwort, Dirk Aderhold, Ulrich Mantz
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Patent number: 7476869Abstract: A gas distributor is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the gas distributor, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The gas distributor may be mounted to a thermal control plate in the anode assembly with several set screws. The gas distributor may be disk-shaped with counterbores in a surface to recess the heads of the set screws. Alternately, the gas distributor may be clamped or held in place by other structures or components of the ion source.Type: GrantFiled: January 12, 2007Date of Patent: January 13, 2009Assignee: Veeco Instruments, Inc.Inventors: David M. Burtner, Scott A. Townsend, Daniel E. Siegfried
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Publication number: 20090008570Abstract: An arc chamber for an ion implantation system includes an exit aperture positioned at a wall of the arc chamber, filaments respectively positioned at two opposing sides within the arc chamber, and repeller structures respectively positioned at two opposing walls within the arc chamber between the filaments and the arc chamber. The repeller structure includes a repeller substrate with a screw axis for fitting the repeller structure to the arc chamber, an insulator positioned underneath the repeller substrate providing an electrical isolation between the repeller substrate and the arc chamber, and a conductive spacer covering a portion of the insulator positioned in between the insulator and the arc chamber.Type: ApplicationFiled: July 2, 2007Publication date: January 8, 2009Inventor: Jung-Chi Chen
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Publication number: 20080315114Abstract: A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer.Type: ApplicationFiled: June 25, 2007Publication date: December 25, 2008Inventors: Shengwu Chang, Frank Slnclalr
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Patent number: 7459704Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.Type: GrantFiled: November 8, 2005Date of Patent: December 2, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Joseph C. Olson, Anthony Renau, Donna L. Smatlak, Kurt Deckerlucke, Paul Murphy, Alexander S. Perel, Russell J. Low, Peter Kurunczi
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Patent number: 7442941Abstract: An ion generator (10) generally includes: a shielding shell (11), a cathode device (16), and an annular anode (14). The shielding shell has a first end (113), an opposite second end (115) and a main body (111) therebetween. The first end has an electron-input hole (13). The second end has an ion-output hole (15). The main body has a gas inlet (170) for introducing an ionizable gas (170). The cathode device faces the electron-input hole for emitting electrons to enter the shielding shell so as to ionize the ionizable gas thereby generating ions. The cathode device includes a conductive base (160) and at least one field emitter (161) thereon. The annular anode is arranged in the shielding shell. The anode is aligned with the ion-output hole.Type: GrantFiled: July 27, 2006Date of Patent: October 28, 2008Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Li Qian, Jing Qi, Jie Tang, Liang Liu, Zhao-Fu Hu, Pi-Jin Chen, Shou-Shan Fan
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Patent number: 7439521Abstract: An ion source has a removable anode assembly that is separable and from a base assembly to allow for ease of servicing the consumable components of the anode assembly. Such consumables may include a gas distributor, a thermal control plate, an anode, and one or more thermal transfer sheets interposed between other components. A pole piece and a cathode may also be part of the anode assembly. The anode assembly may be attached to the base assembly via the pole piece.Type: GrantFiled: January 12, 2007Date of Patent: October 21, 2008Assignee: Veeco Instruments, Inc.Inventors: David M. Burtner, Scott A. Townsend, Daniel E. Siegfried
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Patent number: 7435982Abstract: An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.Type: GrantFiled: March 31, 2006Date of Patent: October 14, 2008Assignee: Energetiq Technology, Inc.Inventor: Donald K. Smith
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Publication number: 20080230713Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.Type: ApplicationFiled: March 22, 2007Publication date: September 25, 2008Applicant: Axcelis Technologies, Inc.Inventors: Yongzhang Huang, Neil K. Colvin, Kevin J. Hoyt
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Patent number: 7425709Abstract: A modular ion source design relies on relatively short modular core ALS components, which can be coupled together to form a longer ALS while maintaining an acceptable tolerance of the anode-cathode gap. Many of the modular components may be designed to have common characteristics so as to allow use of these components in ion sources of varying sizes. A flexible anode can adapt to inconsistencies in the ion source body and module joints to hold a uniform anode-cathode gap along the length of the ALS. A clamp configuration fixes the cooling tube to the ion source body, thereby avoiding heat-introduced warping to the source body during manufacturing.Type: GrantFiled: July 21, 2004Date of Patent: September 16, 2008Assignee: Veeco Instruments, Inc.Inventors: Daniel E. Siegfried, David Matthew Burtner, Scott A. Townsend, Valery Alexeyev
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Patent number: 7425711Abstract: A thermal control plate is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal control plate, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal control plate may support a gas distributor and an anode in the anode assembly. The thermal control plate may have a port for passing working gas from one side of the thermal control plate to the other. An interface surface on the thermal control plate may have a pattern of recesses to allow the working gas to disperse underneath the gas distributor.Type: GrantFiled: January 12, 2007Date of Patent: September 16, 2008Assignee: Veeco Instruments, Inc.Inventors: David M. Burtner, Scott A. Townsend, Daniel E. Siegfried
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Patent number: 7423261Abstract: An ion sampling apparatus for use in a mass spectrometry system. The ion sampling apparatus includes a target support for receiving a sample, an irradiation source for emitting energetic radiation or particles toward the target support, and a conduit having a curved end and a longitudinal axis, the curved end having an inlet with a central axis, the conduit being adjacent to the target support. The longitudinal axis of the conduit and the central axis of the inlet intersect to define an angle that is between about 20 degrees and about 210 degrees.Type: GrantFiled: April 5, 2006Date of Patent: September 9, 2008Assignee: Agilent Technologies, Inc.Inventors: Jean-Luc Truche, Paul C. Goodley, Steven M. Fischer, Jian Bal
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Patent number: 7420191Abstract: The invention concerns a radiation source, comprising an anode (2), a cathode (3), an electric discharge gap (4) between the anode (2) and the cathode (3) and a gas input conduit (30) in the discharge gap (4). The gas input conduit (30) is electrically connected to the anode and the cathode. The invention is characterized in that the gas input conduit (30) is supplied with gas by a gas supply conduit (32), designed to form between its portion (42) connected to the gas input conduit (30) and another of its portions connected to a fixed potential, an electric impedance such that it counters the generation of electric discharges inside the gas input conduit (30).Type: GrantFiled: June 27, 2003Date of Patent: September 2, 2008Assignees: Centre National de la Recherche Scientifique (C.N.R.S.), Universite d'OrleansInventors: Christophe Cachoncinlle, Rémi Dussart, Claude Fleurier, Jean-Michel Pouvesle, Eric Robert, Raymond Viladrosa
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Patent number: 7405411Abstract: In certain example embodiments of this invention, there is provided an ion source including an anode and a cathode. In certain example embodiments, a multi-piece outer cathode is provided. The multi-piece outer cathode allows precision adjustments to be made, thereby permitting adjustment of the magnetic gap between the inner and outer cathodes. This allows improved performance to be realized, and/or prolonged operating life of certain components. This may also permit multiple types of gap adjustment to be performed with different sized outer cathode end pieces. In certain example embodiments, cathode fabrication costs may also be reduced.Type: GrantFiled: May 6, 2005Date of Patent: July 29, 2008Assignee: Guardian Industries Corp.Inventor: Hugh A. Walton
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Patent number: 7397048Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.Type: GrantFiled: September 16, 2005Date of Patent: July 8, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Vikram Singh, Edmund J. Winder, Harold M. Persing, Timothy Jerome Miller, Ziwei Fang, Atul Gupta
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Publication number: 20080149826Abstract: Techniques for providing a ribbon-shaped gas cluster ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for providing a ribbon-shaped gas cluster ion beam. The apparatus may comprise at least one nozzle configured to inject a source gas at a sufficient speed into a low-pressure vacuum space to form gas clusters. The apparatus may also comprise at least one ionizer that causes at least a portion of the gas clusters to be ionized. The apparatus may further comprise a beam-shaping mechanism that forms a ribbon-shaped gas cluster ion beam based on the ionized gas clusters.Type: ApplicationFiled: December 22, 2006Publication date: June 26, 2008Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Anthony RENAU, Joseph C. Olson, Jonathan Gerald England
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Patent number: 7388195Abstract: The invention provides an interface assembly for delivering an ionized analyte from an ionization apparatus into an ion mobility spectrometer. This allows analysis of biological and non-biological samples, even non-volatile solids, via differential mobility spectrometry, without fragmentation of molecules. The invention also provides portable sample analysis systems that operate at ambient pressure. Systems of the invention may be used for high molecular weight species detection, for example, drinking water contaminants, pathogenic biological agents, bio-organic substances, non-biological material, peptides, proteins, oligonucleotides, polymers, bacteria, and hydrocarbons.Type: GrantFiled: September 30, 2005Date of Patent: June 17, 2008Assignee: Charles Stark Draper Laboratory, Inc.Inventors: Angela M. Zapata, Ernest S. Kim, Priya Agrawal, Melissa D. Krebs, Cristina E. Davis
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Publication number: 20080105828Abstract: Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.Type: ApplicationFiled: April 11, 2007Publication date: May 8, 2008Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher R. HATEM, Jay Thomas SCHEUER, Russell J. LOW, Morgan D. Evans, Jonathan Gerald ENGLAND
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Patent number: 7365339Abstract: A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber with a tip of the cathode holder positioned outward from an inner wall surface of the plasma generating chamber. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned outward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, the tip of the first heat shield positioned outward from the inner wall surface. At a rear side of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.Type: GrantFiled: May 17, 2006Date of Patent: April 29, 2008Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Hideki Fujita, Sei Umisedo, Nariaki Hamamoto
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Patent number: 7342236Abstract: An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Furthermore, the separation of the cooling plate and the anode allows the cooling plate and cooling lines to be electrically isolated from the high voltage of the anode (e.g., using a thermally conductive, electrically insulating material). Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ion source, particularly as the anode is free of coolant lines, which can present some difficulty during maintenance.Type: GrantFiled: February 18, 2005Date of Patent: March 11, 2008Assignee: Veeco Instruments, Inc.Inventors: David Matthew Burtner, Scott A. Townsend, Daniel E. Siegfried, Viacheslav V. Zhurin
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Patent number: 7339181Abstract: A high energy photon source for generating EUV radiation comprises a nozzle emitting a supersonic stream of source material, a laser or electrical/magnetic pre-ionization mechanism and a laser or electrical/magnetic excitation mechanism and a skimmer plate between them providing a collimated high density beam of source material for excitation.Type: GrantFiled: November 7, 2003Date of Patent: March 4, 2008Assignee: Powerlase LimitedInventors: Alan G. Taylor, Christopher J. Barnett, David R. Klug, Ian P. Mercer
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Patent number: 7301160Abstract: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.Type: GrantFiled: June 1, 2004Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventor: Peter Michael Banks
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Patent number: 7223984Abstract: The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium gas is ionized by generating an arc discharge within the ion source. The presence of the second gas enhances the ionization of the helium gas. The increased helium ionization enables formation of helium ion beams having a high beam currents suitable for implantation.Type: GrantFiled: April 3, 2002Date of Patent: May 29, 2007Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Jaime M. Reyes, Charles Prillaman
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Patent number: 7196337Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.Type: GrantFiled: April 22, 2004Date of Patent: March 27, 2007Assignee: Cabot Microelectronics CorporationInventor: David G. Mikolas
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Patent number: 7170070Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.Type: GrantFiled: September 15, 2005Date of Patent: January 30, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Ui-hui Kwon, Gyeong-su Keum, Won-young Chung, Kwang-ho Cha, Young-tae Kim, Seung-ki Chae, Jai-hyung Won, Young-kwan Park, Tai-kyung Kim
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Patent number: 7157704Abstract: A method of operating a corona discharge device includes producing a high-intensity electric field in an immediate vicinity of at least one corona electrode and continuously or periodically heating the corona electrode to a temperature sufficient to mitigate an undesirable effect of an impurity, such as an oxide layer, formed on the corona electrode.Type: GrantFiled: December 2, 2003Date of Patent: January 2, 2007Assignee: Kronos Advanced Technologies, Inc.Inventors: Igor A. Krichtafovitch, Jacob Oharah, John Thompson
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Patent number: 7102139Abstract: An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.Type: GrantFiled: January 27, 2005Date of Patent: September 5, 2006Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell J. Low, Eric R. Cobb, Joseph C. Olson, Leo V. Klos
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Patent number: 7098462Abstract: One embodiment of the present invention provides a system for ionizing airborne particulates. The system includes an insulating substrate and a first electroplated structure on the insulating substrate. This first electroplated structure includes an anchor and a probe structure on the anchor that is separate from the insulating substrate. A second electroplated structure is included on the insulating substrate.Type: GrantFiled: January 14, 2005Date of Patent: August 29, 2006Assignee: The Regents of the University of CaliforniaInventors: Beelee Chua, Anthony S. Wexler, Norman C. Tien, Debbie A. Niemeier, Britt A. Holmén
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Patent number: 7053333Abstract: An apparatus for producing a vacuum arc plasma source device using a low mass, compact inductive energy storage circuit powered by a low voltage DC supply acts as a vacuum arc plasma thruster. An inductor is charged through a switch, subsequently the switch is opened and a voltage spike of Ldi/dt is produced initiating plasma across a resistive path separating anode and cathode. The plasma is subsequently maintained by energy stored in the inductor. Plasma is produced from cathode material, which allows for any electrically conductive material to be used. A planar structure, a tubular structure, and a coaxial structure allow for consumption of cathode material feed and thereby long lifetime of the thruster for long durations of time.Type: GrantFiled: August 16, 2004Date of Patent: May 30, 2006Assignee: Alameda Applied Sciences Corp.Inventors: Jochen Schein, Andrew N. Gerhan, Robyn L. Woo, Michael Y. Au, Mahadevan Krishnan