Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions o

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Providing vapor to a vapor-receiving device housed in a high vacuum chamber. An ion beam implanter, as an example, has a removable high voltage ion source within a high vacuum chamber and a vapor delivery system that delivers vapor to the ion source and does not interfere with removal of the ion source for maintenance. For delivering vapor to a vapor-receiving device, such as the high voltage ion source under vacuum, a flow interface device is in the form of a thermally conductive valve block. A delivery extension of the interface device automatically connects and disconnects within the high vacuum chamber with the removable vapor receiving device by respective installation and removal motions. In an ion implanter, the flow interface device or valve block and source of reactive cleaning gas are mounted in a non-interfering way on the electrically insulating bushing that insulates the ion source from the vacuum housing and the ion source may be removed without disturbing the flow interface device.

Abstract: A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.

Abstract: Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the supply of water. An ion source structure is configured to generate a plurality of hydrogen ions from the flow of hydrogen gas. An accelerator tube is configured to accelerate the plurality of hydrogen ions. The supply of water has an isotopic ratio of deuterium that is smaller than the isotopic ratio of deuterium in Vienna Standard Mean Ocean Water.

Abstract: A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.

Abstract: Nanofabrication installation comprising: a specimen holder, for holding a specimen; a mask, having a through-opening between the upper and lower faces of the mask, for letting charged particles through onto the specimen holder; a near-field detection device for detecting a relative position between the mask (8) and the specimen holder (3); and a displacement device for generating a relative movement between the mask (8) and the specimen holder (3) independently of the relative position between the source (1) and the mask (8), the mask including at least a first electrode in the through-opening (10).

Abstract: A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.

Abstract: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.

Abstract: A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as C16Hx+, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as B18Hx+ or B10Hx+.

Abstract: A method for measuring three-dimensional devices in a wafer comprises the step of obtaining a plurality of cross-sectional images of a corresponding plurality of three-dimensional devices in the wafer. The plurality of three-dimensional devices have essentially identical geometries. Each cross-sectional image is obtained from a plane in the corresponding three-dimensional device at a predetermined distance from a fiducial mark thereof. The predetermined distance is different for each of the plurality of cross-sectional images. The method further comprises the step of determining the geometries of the plurality of three-dimensional devices based on the cross-sectional images thereof.

Abstract: An apparatus for visualizing an ion beam editing operation of a sample. The apparatus comprises a charged particle beam column for producing an charged particle beam and for directing the charged particle beam onto the sample and beam rastering electronics (BRE) for controlling a movement and a dwell time of the charged particle beam. The apparatus further comprises a detector for detecting charged particles stemming from the sample as a result of the charged particle beam impinging on the sample and a multi-channel scalar (MCS) coupled to the detector and to the IBRE, and time-correlated with the BRE, the MCS for binning events detected at the detector as a function of time duration from a start event. Finally, the apparatus comprises an analysis module connected to the MCS for processing data from the MCS into a display signal, and a display module connected to the analysis module for displaying the display signal.

Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

Abstract: A ribbon-shaped ion beam is modified using multiple coil structures on a pair of opposed ferromagnetic bars. The coil structures comprise continuous windings which have predetermined variations along the length of the bar of turns per unit length. In an example, one coil structure may have uniform turns per unit length along the bar, so that energizing the coil structures forms a magnetic field component extending across the gap between the bars with a quadrupole intensity distribution. A second coil structure may have turns per unit length varying to produce a hexapole magnetic field intensity distribution. Further coil structures may be provided to produce octopole and decapole magnetic field distributions. The coil structures may be energized to produce magnetic fields parallel to the bars which vary along the length of the bars, to twist or flatten the ribbon-shaped beam.

Abstract: Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.

Abstract: An object is to provide a method for manufacturing an SOI substrate, by which defective bonding can be prevented. An embrittled layer is formed in a region of a semiconductor substrate at a predetermined depth; an insulating layer is formed over the semiconductor substrate; the outer edge of the semiconductor substrate is selectively etched on the insulating layer side to a region at a greater depth than the embrittled layer; and the semiconductor substrate and a substrate having an insulating surface are superposed on each other and bonded to each other with the insulating layer interposed therebetween. The semiconductor substrate is heated to be separated at the embrittled layer while a semiconductor layer is left remaining over the substrate having an insulating surface.

Abstract: An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.

Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract: The invention relates to a hybrid phase plate for use in a TEM. The phase plate according to the invention resembles a Boersch phase plate in which a Zernike phase plate is mounted. As a result the phase plate according to the invention resembles a Boersch phase plate for electrons scattered to such an extent that they pass outside the central structure (15) and resembles a Zernike phase plate for scattered electrons passing through the bore of the central structure. Comparing the phase plate of the invention with a Zernike phase plate is has the advantage that for electrons that are scattered over a large angle, no electrons are absorbed or scattered by a foil, resulting in a better high resolution performance of the TEM. Comparing the phase plate of the invention with a Boersch phase plate the demands for miniaturization of the central structure are less severe.

Abstract: A system, apparatus, and method is provided for preventing condensation on a workpiece in an end station of an ion implantation system. A workpiece is cooled in a first environment, and is transferred to a load lock chamber that is in selective fluid communication with the end station and a second environment, respectively. A workpiece temperature monitoring device is configured to measure a temperature of the workpiece in the load lock chamber. An external monitoring device measures a temperature and relative humidity in the second environment, and a controller is configured to determine a temperature of the workpiece at which condensation will not form on the workpiece when the workpiece is transferred from the load lock chamber to the second environment.

Abstract: An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece.

Abstract: A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.

Abstract: Provided is an ion implantation apparatus including a disk which rotates about a first axis, a pad which is rotatable about a second axis on the disk, and on which a substrate is placed with a holder attached to a circumference of the substrate, the holder including a weight, fixing pins which are each fixedly provided on a portion on the disk around the pad, a sliding piece which slides, by its own centrifugal force, on the disk with a rotational movement of the disk and thereby clamps the holder in cooperation with the fixing pins, and an ion beam generator which irradiates the substrate with ion beams.

Abstract: To form one or more dose region(s) on a workpiece, a projected area of an ion beam on the workpiece is initially moved parallel to a long axis of the projected area from an edge of the workpiece to an opposite edge of the workpiece, and then is moved parallel to a short axis of the projected area a shifted distance shorter than the short axis of the projected area. Thereafter, repeat the moving step and the shifting step in sequence until all dose region(s) is completely formed. Accordingly, the cross-sectional size of the projected area is only proportional to the short axis when it is moved along its long axis. Hence, it is similar to use a narrow pen to paint a wall, and then it is suitable for forming different dose regions with different doses on a workpiece, such as the dose split.

Abstract: A semiconductor manufacturing includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-? directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.

Abstract: A ribbon-shaped ion beam having an elongate cross-section normal to a beam direction is modified by generating, at a predetermined position along the ribbon-shaped beam, a magnetic field extending in an x-direction along an x-axis. The x-direction magnetic field has a non-uniform intensity which is a desired function of x.

Abstract: Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable.

Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.

Abstract: A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator.

Abstract: Applicants have found that the asymmetrical energy distribution of ions from an ion source allow chromatic aberration to be reduced by filtering ions in the low energy beam tail without significantly reducing processing time. A preferred embodiment includes within an ion beam column a filter that removes the low energy ions from the beam.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: An ion beam device is described. The ion beam device includes an ion beam source for generating an ion beam, the ion beam being emitted along a first axis, an aperture unit adapted to shape the ion beam, and an achromatic deflection unit adapted to deflect ions of the ion beam having a predetermined mass by a deflecting angle. The achromatic deflection unit includes: an electric field generating component for generating an electric field, and a magnetic field generating component for generating a magnetic field substantially perpendicular to the electric field. The device further includes a mass separation aperture adapted for blocking ions with a mass different from the predetermined mass and for allowing ions having the predetermined mass to trespass the mass separator, and an objective lens having a second optical axis, wherein the second optical axis is inclined with regard to the first axis.

Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411?), and an inner pole piece (412) having a lowermost end (412?) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

Abstract: Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.

Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.

Abstract: An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.

Abstract: An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions.

Abstract: Method for the treatment of a semiconductor substrate (2), in which an ion beam (4) is produced from a doping gas and is directed onto the semiconductor substrate (2), characterized in that the doping gas is fed through a plastic hose (6) to a unit (3) for producing an ion beam (4), and is then ionized. The method and the device advantageously permit the supply of the unit 3 for producing an ion beam 4 with a doping gas from customary gas reservoirs 14 such as customary compressed gas cylinders, for example. Voltage flashovers from the deflection elements 5 are effectively prevented by the use of a plastic hose 6. The method and the device thus permit the simple construction of a corresponding ion implantation apparatus in conjunction with possible inexpensive supply thereof with doping gas.

Abstract: Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.

Abstract: The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.

Abstract: A method is provided for reducing particle contamination in an ion implantation system, wherein an ion implantation system having source, mass analyzer, resolving aperture, decel suppression plate, and end station is provided. An ion beam is formed via the ion source, and a workpiece is transferred between an external environment and the end station for ion implantation thereto. A decel suppression voltage applied to the decel suppression plate is modulated concurrent with the workpiece transfer, therein causing the ion beam to expand and contract, wherein one or more surfaces of the resolving aperture and/or one or more components downstream of the resolving aperture are impacted by the ion beam, therein mitigating subsequent contamination of workpieces from previously deposited material residing on the one or more surfaces. The contamination can be mitigated by removing the previously deposited material or strongly adhering the previously deposited material to the one or more surfaces.

Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+ and BnHx?, where 10?n?100 and 0?x?n+4.