Ion Bombardment Patents (Class 250/492.21)
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Patent number: 8673450Abstract: The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 ??·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm?1 by G band intensity at 1570 cm?1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.Type: GrantFiled: October 12, 2006Date of Patent: March 18, 2014Assignee: Toyo Tanso Co., Ltd.Inventors: Kiyoshi Saito, Fumiaki Yokoyama, Hitoshi Suzuki, Atsuko Ando, Tetsuro Tojo, Seiji Shinohara
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Patent number: 8674324Abstract: A charged particle beam apparatus includes: a sample chamber; a sample stage; an electron beam irradiation system for irradiating the sample with an electron beam; a focused ion beam irradiation system for irradiating the sample with a focused ion beam; a sample stage drive unit having a rotational axis orthogonal to at least one of an irradiation axis of the electron beam irradiation system and an irradiation axis of the focused ion beam irradiation system; and a sample transporting mechanism for transporting the sample to the sample stage. The sample transporting mechanism includes a transportation path provided in the sample stage drive unit in a direction parallel to the rotational axis of the sample stage drive unit, and is configured to transport the sample to the sample stage through the transportation path.Type: GrantFiled: March 15, 2013Date of Patent: March 18, 2014Assignee: Hitachi High-Tech Science CorporationInventor: Masakatsu Hasuda
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Patent number: 8669537Abstract: A charged particle beam writing apparatus and a charged particle beam writing method capable of shortening the time necessary to generate shot data and improving writing throughput. A graphic pattern defined in write data is divided into graphics represented in shot units. The divided graphics are temporarily stored in a memory and are distributed to their corresponding subfield areas while developing position information defined in a state of being compressed to write data. When each pattern is written by multi-pass writing, graphics divided at a first pass are used for distribution to subfield areas after a second pass.Type: GrantFiled: September 16, 2009Date of Patent: March 11, 2014Assignee: NuFlare Technology, Inc.Inventor: Jun Yashima
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Patent number: 8664619Abstract: A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam.Type: GrantFiled: March 13, 2013Date of Patent: March 4, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Shengwu Chang
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Patent number: 8653486Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.Type: GrantFiled: December 13, 2012Date of Patent: February 18, 2014Assignee: Axcelis Technologies, Inc.Inventor: Edward C. Eisner
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Patent number: 8653807Abstract: Techniques for ion beam current measurement, especially for measuring low energy ion beam current, are disclosed. In one exemplary embodiment, the techniques may be realized as an ion beam current measurement apparatus has at least a planar Faraday cup and a magnet device. The planar Faraday cup is close to an inner surface of a chamber wall, and may be non-parallel to or parallel to the inner surface. The magnet device is located close to the planar Faraday cup. Therefore, by properly adjusting the magnetic field, secondary electrons, incoming electrons and low energy ions may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of at least the planar Faraday cup on the ion beam path.Type: GrantFiled: July 22, 2010Date of Patent: February 18, 2014Assignee: Advanced Ion Beam Technology, Inc.Inventors: Peter M Kopalidis, Zhimin Wan
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Patent number: 8653489Abstract: Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. Additionally, apparatus kits are disclosed that enable the use of the same shields in the observation of prepared samples.Type: GrantFiled: April 7, 2011Date of Patent: February 18, 2014Assignee: Gatan, Inc.Inventors: Steven Thomas Coyle, John Andrew Hunt
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Patent number: 8648315Abstract: An ion accelerator includes a plasma ion source and a micro-collimator. The micro-collimator has a plurality of channels. The length-to-width ratio of each channel is greater than five, and the channel width is less than one micron. The ion source is coupled to the micro-collimator such that ions from the ion source pass into the channels, and then through the plurality of channels. In one specific example, the ion source produces cold ions that have only a small amount of lateral momentum. Each channel is an individually gated acceleration channel that is formed into a solid dielectric material. Ions are accelerated down the acceleration channel. The ion accelerator forms a part of an ionjet head of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.Type: GrantFiled: August 14, 2012Date of Patent: February 11, 2014Assignee: Transmute, Inc.Inventors: Kim L. Hailey, Robert O. Conn
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Patent number: 8648299Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, an isotope of Neon is used.Type: GrantFiled: March 4, 2013Date of Patent: February 11, 2014Assignee: Carl Zeiss Microscopy, LLCInventors: John A. Notte, IV, Sybren Sijbrandij
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Patent number: 8644571Abstract: The therapeutic treatment of a patient using intensity-modulated proton therapy is described. In one example, a method of creating a proton treatment plan is presented that divides volumes of interest into sub-volumes, applies dose constraints to the sub-volumes, finds one or more feasible configurations of a proton therapy system, and selects a proton beam configuration that improves or optimizes one or more aspects of proton therapy. In some implementations, the method of dividing volumes into sub-volumes includes creating fractional sub-volumes based at least in part on proximity to a target volume boundary. In some implementations, the method of finding an improved or optimal proton beam configuration from a set of feasible configurations includes finding a minimum of a cost function that utilizes weighting factors associated with treatment sites.Type: GrantFiled: December 5, 2012Date of Patent: February 4, 2014Inventors: Reinhard W. Schulte, Regina Burachik, Yalcin Kaya
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Patent number: 8642980Abstract: Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam.Type: GrantFiled: March 15, 2013Date of Patent: February 4, 2014Assignee: Hitachi High-Tech Science CorporationInventors: Xin Man, Yo Yamamoto, Atsushi Uemoto, Tatsuya Asahata
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Patent number: 8637838Abstract: A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.Type: GrantFiled: December 13, 2011Date of Patent: January 28, 2014Assignee: Axcelis Technologies, Inc.Inventors: Edward C. Eisner, Bo H. Vanderberg
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Patent number: 8629394Abstract: An object of the present invention is to eliminate a distortion in an image even if there is an angular difference between the deflection direction of the charged particle beam and the tilt axis of a specimen, and to accurately observe and process the specimen. When the deflection direction of the charged particle beam is not parallel to the tilt axis of the specimen, the deflection rotation angle to the observation direction of the charged particle beam is determined, and the deflection pattern is changed. Thereby the distortion in the image is corrected. The deflection pattern is changed to a parallelogram. A distortion-free image is obtained even if the specimen is tilted, and the specimen can be observed and processed with high accuracy. This allows automatically recognizing the position correction mark to perform observation and processing after correcting the positional relation.Type: GrantFiled: October 23, 2009Date of Patent: January 14, 2014Assignee: Hitachi High-Technologies CorporationInventors: Yuichi Madokoro, Megumi Aizawa, Yukio Yoshizawa
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Patent number: 8629416Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.Type: GrantFiled: April 18, 2012Date of Patent: January 14, 2014Assignee: FEI CompanyInventors: Marcus Straw, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
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Patent number: 8624185Abstract: Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.Type: GrantFiled: September 15, 2011Date of Patent: January 7, 2014Assignee: Carl Zeiss Microscopy, LLCInventors: Diederik Jan Maas, Maria Rudneva, Emile van Veldhoven, Hendrik Willem Zandbergen
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Patent number: 8623137Abstract: A method for slicing a shaped silicon ingot includes providing a single crystal silicon boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in an <100> crystallographic direction substantially vertically extending from the first end-face to the second end-face. The method further includes cutting the single crystal silicon boule substantially through an {110} crystallographic plane in parallel to the axis to separate the single crystal silicon boule into a first portion with a first surface and a second portion with a second surface. Additionally, the method includes exposing either the first surface of the first portion or the second surface of the second portion and performing a layer transfer process to form a single crystal silicon sheet from either the first surface of the first portion or from the second surface of the second portion.Type: GrantFiled: April 10, 2009Date of Patent: January 7, 2014Assignee: Silicon Genesis CorporationInventor: Francois J. Henley
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Patent number: 8618514Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.Type: GrantFiled: November 2, 2011Date of Patent: December 31, 2013Assignee: SemEquip, Inc.Inventors: Thomas N. Horsky, Dale C. Jacobson
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Patent number: 8618497Abstract: The present invention provides a drawing apparatus including a plurality of drawing units each of which is configured to perform drawing on a substrate with a charged particle beam, a plurality of first processors configured to be selectively connectable to each of the plurality of drawing units, an information processor configured to determine, from the plurality of first processors, a first processor to be connected to a first drawing unit among the plurality of drawing units, based on drawing data, and a connection unit configured to connect the determined first processor to the first drawing unit.Type: GrantFiled: January 4, 2013Date of Patent: December 31, 2013Assignee: Canon Kabushiki KaishaInventors: Shinji Ohishi, Tomoyuki Morita
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Patent number: 8618518Abstract: A method for forming a solid immersion lens (SIL) includes generating a focused ion beam, and projecting the focused ion beam onto an optical medium at locations defined by a binary bitmap milling pattern, wherein the locations at which the focused ion beam impact a surface of the optical medium are randomized over successive raster scans of the surface of the optical medium to form at least a portion of a hemispherical structure in the optical medium.Type: GrantFiled: March 15, 2011Date of Patent: December 31, 2013Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: David Winslow Niles, Ronald William Kee
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Patent number: 8610090Abstract: Disclosed are embodiments of an ion beam shield for use in an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The ion beam shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing.Type: GrantFiled: December 29, 2012Date of Patent: December 17, 2013Assignee: Gatan Inc.Inventors: Steven Thomas Coyle, John Andrew Hunt
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Patent number: 8604449Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.Type: GrantFiled: June 15, 2011Date of Patent: December 10, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Piotr R. Lubicki, Bon-Woong Koo
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Patent number: 8598051Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: February 4, 2011Date of Patent: December 3, 2013Assignee: President and Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Patent number: 8598547Abstract: Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.Type: GrantFiled: June 28, 2011Date of Patent: December 3, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell J. Low, Atul Gupta, William T. Weaver
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Patent number: 8598545Abstract: The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.Type: GrantFiled: May 1, 2012Date of Patent: December 3, 2013Assignee: Mapper Lithography IP B.VInventors: Pieter Kruit, Yanxia Zhang, Martijn J. Van Bruggen, Stijn Willem Herman Karel Steenbrink
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Patent number: 8598485Abstract: The present invention efficiently processes work pieces by transferring them without bringing them outside. The present invention comprises: a stage 4 for working, which is used when working a work piece D, L by irradiating a focused beam B while observing the work piece D, L in an observation region W of a previously determined range, and possessing a table 10 having plural mount bases 2, 3 on whose upper faces 2a, 3a there can be respectively mounted the work piece D, L; and a rotation slant means 11 rotating respectively the mount base 2, 3 about a Z-axis perpendicular to the upper faces 2a, 3a and slanting the upper faces 2a, 3a to an arbitrary angle, wherein the table 10 is made possible to move so as to dispose respectively the plural mount bases 2, 3 to an inside of the observation region W.Type: GrantFiled: September 4, 2007Date of Patent: December 3, 2013Assignee: SII Nano Technology Inc.Inventor: Tatsuya Adachi
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Patent number: 8592784Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.Type: GrantFiled: July 13, 2011Date of Patent: November 26, 2013Assignee: TEL Epion Inc.Inventors: John J. Hautala, Nathan E. Baxter
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Patent number: 8592785Abstract: An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.Type: GrantFiled: September 22, 2011Date of Patent: November 26, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Nai-Han Cheng, Chin-Hsiang Lin, Chi-Ming Yang, Chun-Lin Chang, Chih-Hong Hwang
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Patent number: 8592786Abstract: An ion implanter includes a platen having a clamping surface configured to support a wafer for treatment with ions, the platen also having at least one pair of electrodes under the clamping surface, a clamping power supply configured to provide an AC signal to the at least one pair of electrodes and a sensed signal representative of the AC signal, and a controller. The controller is configured to receive the sensed signal from the clamping power supply when no wafer is clamped to the clamping surface. The controller is further configured to monitor the sensed signal and determine if the sensed signal is representative of deposits on the clamping surface exceeding a predetermined deposit threshold.Type: GrantFiled: March 15, 2013Date of Patent: November 26, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: David E. Suuronen, Julian G. Blake, Kurt Decker-Lucke, James Carroll, Klaus Petry
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Patent number: 8592763Abstract: Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises a tilting ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The tilting ion beam irradiating means may direct ions at the sample from more than one tilt angle. A rotating shield retention stage is also disclosed which works in concert with the tilting ion beam irradiating means.Type: GrantFiled: August 30, 2012Date of Patent: November 26, 2013Assignee: Gatan Inc.Inventors: Steven Thomas Coyle, John Andrew Hunt
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Patent number: 8586460Abstract: Methods of enabling the use of high wavelength lasers to create shallow melt junctions are disclosed. In some embodiments, the substrate may be preamorphized to change its absorption characteristics prior to the implantation of a dopant. In other embodiments, a single implant may serve to amorphize the substrate and provide dopant. Once the substrate is sufficiently amorphized, a laser melt anneal may be performed. Due to the changes in the absorption characteristics of the substrate, longer wavelength lasers may be used for the anneal, thereby reducing cost.Type: GrantFiled: September 21, 2011Date of Patent: November 19, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Deepak Ramappa
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Patent number: 8581218Abstract: In a particle therapy treatment planning system for creating treatment plan data, the movement of a target (patient's affected area) is extracted from plural tomography images of the target, and the direction of scanning is determined by projecting the extracted movement on a scanning plane scanned by scanning magnets. Irradiation positions are arranged on straight lines parallel with the scanning direction making it possible to calculate a scanning path for causing scanning to be made mainly along the direction of movement of the target. The treatment planning system can thereby realize dose distribution with improved uniformity.Type: GrantFiled: June 29, 2011Date of Patent: November 12, 2013Assignee: Hitachi, Ltd.Inventors: Rintaro Fujimoto, Yoshihiko Nagamine, Masumi Umezawa, Toru Umekawa, Yusuke Fujii, Hiroshi Akiyama
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Patent number: 8581217Abstract: A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.Type: GrantFiled: October 8, 2010Date of Patent: November 12, 2013Assignee: Advanced Ion Beam Technology, Inc.Inventors: Don Berrian, Cheng-Hui Shen
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Patent number: 8581216Abstract: The ion implantation apparatus includes a source head, an extraction electrode having a slit trough which a part of an ion beam outputted from the source head passes, a magnet for curving a trajectory of the ion beam passed through the slit, a target to be irradiated with the ion beam outputted from the magnet, an electric current measuring device facing an ion exit port of the source head through the slit of the extraction electrode, and a control portion for controlling a position of the extraction electrode based on a measured result of the current measuring device in a state that production of a magnetic field from the magnet is stopped.Type: GrantFiled: September 29, 2010Date of Patent: November 12, 2013Assignee: Fujitsu Semiconductor LimitedInventor: Katsunari Nishikawa
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Patent number: 8575574Abstract: An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.Type: GrantFiled: December 8, 2010Date of Patent: November 5, 2013Assignee: Samsung Display Co., Ltd.Inventors: Jin-Hee Kang, Chun-Gi You, Sun Park, Jong-Hyun Park, Yul-Kyu Lee
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Patent number: 8563944Abstract: Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.Type: GrantFiled: August 27, 2012Date of Patent: October 22, 2013Assignee: Hitachi High-Technologies CorporationInventors: Hiroyasu Shichi, Shinichi Matsubara, Norihide Saho, Noriaki Arai, Tohru Ishitani
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Patent number: 8563407Abstract: A method includes positioning at least one dual sided workpiece on an assembly in a process chamber to expose a first side of the at least one dual sided workpiece, treating the first side of the at least one dual sided workpiece, reorienting a portion of the assembly in the process chamber to expose a second side of the at least one dual sided workpiece, the second side opposing the first side, and treating the second side. A processing apparatus including a process chamber defining an enclosed volume and a dual sided workpiece assembly disposed in the enclosed volume is also provided.Type: GrantFiled: March 4, 2010Date of Patent: October 22, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Richard J. Hertel, Ernest E. Allen, Jr., Philip J. McGrail, Jr.
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Patent number: 8563951Abstract: Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.Type: GrantFiled: March 14, 2012Date of Patent: October 22, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Jin-Ha Jeong, Vladimir Urazaev, Hea-Yun Lee
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Patent number: 8563943Abstract: A particle beam irradiation apparatus There is provided a data processing apparatus that displays on a display unit a measured irradiation position value and an irradiation position value error, which is the error of the measured irradiation position relevant value related to the irradiation position of charged particle beam with respect to a desired irradiation position value related to a desired irradiation position, so that the measured irradiation position relevant value and the irradiation position relevant value error correspond to each other.Type: GrantFiled: December 24, 2010Date of Patent: October 22, 2013Assignee: Mitsubishi Electric CorporationInventors: Takaaki Iwata, Toshiyuki Hokodate
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Patent number: 8558195Abstract: Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.Type: GrantFiled: November 19, 2010Date of Patent: October 15, 2013Assignee: Corning IncorporatedInventor: Sarko Cherekdjian
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Patent number: 8558486Abstract: A d.c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In embodiments, the individually regulated gap voltages are generated by electrically isolated alternators mounted on a common rotor shaft driven by an electric motor. Alternating power outputs from the alternators provide inputs to individual regulated d.c. power supplies to generate the gap voltages. The power supplies are electrically isolated and have outputs connected in series across successive pairs of accelerator electrodes. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.Type: GrantFiled: December 8, 2010Date of Patent: October 15, 2013Assignee: GTAT CorporationInventors: Theodore H. Smick, Geoffrey Ryding, William H. Park, Ronald Horner
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Patent number: 8558197Abstract: An ion implanting system includes an ion beam generator configured for generating a first ion beam; a mass separation device configured for isolating a second ion beam including required ions from the first ion beam; a holder device configured for holding a plurality of substrates, wherein the holder device and the second ion beam reciprocate relative to each other along a first direction in straight line or arc to make the plurality of substrates pass across a projection region of the second ion beam; and a first detector configured for obtaining relevant parameters of the second ion beam. The above ion beam implanting system may increase the ion beam utilization rate. The ion implanting system further comprises a second detector arranged on the holder device which could fully scan across the projection range of the second ion beam and obtaining the relevant parameters of the second ion beam.Type: GrantFiled: September 15, 2010Date of Patent: October 15, 2013Assignee: Advanced Ion Beam Technology, Inc.Inventor: Heng-Gung Chen
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Publication number: 20130264498Abstract: An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.Type: ApplicationFiled: April 4, 2012Publication date: October 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin CHANG, Chih-Hing HWANG, Wen-Yu KU, Chi-Ming YANG, Chin-Hsiang LIN
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Patent number: 8552406Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.Type: GrantFiled: February 18, 2011Date of Patent: October 8, 2013Assignee: Fibics IncorporatedInventors: Michael William Phaneuf, Ken Guillaume Lagarec, Alexander Krechmer
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Publication number: 20130256566Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.Type: ApplicationFiled: March 15, 2013Publication date: October 3, 2013Applicant: SEN CORPORATIONInventors: Hiroyuki KARIYA, Masaki Ishikawa, Yoshiaki Inda, Takeshi Kurose, Takanori Yagita, Toshio Yumiyama
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Patent number: 8546768Abstract: A device for generating an ion beam includes a support; a liquid metal ion source connected to the support at the lower end of the ion source and surrounded by a cryogenic trap which is capable of preventing volatile chemicals from reaching the ion source; an ion extraction means for extracting the ions emitted by the source through an opening disposed near the upper end of the ion source; and means for generating a magnetic field in the opening of the extraction means, the generated magnetic field capable of preventing charged particles from reaching the ion source.Type: GrantFiled: September 14, 2009Date of Patent: October 1, 2013Assignee: Centre National de la Recherche Scientifique (C.N.R.S.)Inventors: Jacques Gierak, Ralf Jede
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Publication number: 20130248738Abstract: An ion implanter includes a platen having a clamping surface configured to support a wafer for treatment with ions, the platen also having at least one pair of electrodes under the clamping surface, a clamping power supply configured to provide an AC signal to the at least one pair of electrodes and a sensed signal representative of the AC signal, and a controller. The controller is configured to receive the sensed signal from the clamping power supply when no wafer is clamped to the clamping surface. The controller is further configured to monitor the sensed signal and determine if the sensed signal is representative of deposits on the clamping surface exceeding a predetermined deposit threshold.Type: ApplicationFiled: March 15, 2013Publication date: September 26, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventor: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
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Publication number: 20130240753Abstract: An ion source includes a filament configured to emit thermoelectrons and a cathode having a first side proximate the filament and a second side opposite the first side. The cathode includes a first layer that includes a first material on the first side of the cathode and a second layer on the second side of the cathode. The first layer is between the filament and the second side.Type: ApplicationFiled: October 25, 2012Publication date: September 19, 2013Applicant: Samsung Electronics Co., Ltd.Inventor: Seiji Kamei
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Patent number: 8530865Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.Type: GrantFiled: January 20, 2012Date of Patent: September 10, 2013Assignee: Hitachi High-Technologies CorporationInventors: Hiroyasu Shichi, Shinichi Matsubara, Takashi Ohshima, Satoshi Tomimatsu, Tomihiro Hashizume, Tohru Ishitani
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Patent number: 8525134Abstract: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.Type: GrantFiled: November 3, 2009Date of Patent: September 3, 2013Assignee: Mapper Lithography IP B.V.Inventors: Jan-Jaco Marco Wieland, Johannes Christiaan van 't Spijker, Remco Jager, Pieter Kruit
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Patent number: 8524584Abstract: Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.Type: GrantFiled: January 20, 2011Date of Patent: September 3, 2013Assignee: Axcelis Technologies, Inc.Inventors: William D. Lee, Daniel R. Tieger, Tseh-Jen Hsieh