Abstract: The purpose of the present invention is to provide an image forming device and the like that is capable of forming a proper integrated signal even when an image or a signal waveform is acquired from a pattern having the possibility of preventing proper matching, such as a repetition pattern, a shrinking pattern, and the like. In order to achieve the purpose, there is proposed an image forming device that forms an integrated image by integrating a plurality of image signals and that is provided with: a matching processing section that performs a matching process between the plurality of image signals; an image integration section that integrates the plurality of image signals for which positioning has been performed by the matching processing section; and a periodicity determination section that determines a periodicity of a pattern contained in the image signals.

Abstract: A method of cleaning calibration and other substrates that improves the correlation of measurements from calibration and product substrates and increases the useful life of the calibration substrates is herein disclosed. By exposing a calibration substrate to ultraviolet light, a reaction is triggered that results in the cleaning of the contaminants from the calibration substrate. For instance, monatomic oxygen is introduced to contaminants on the surface of a calibration substrate to remove the contaminants without inducing modifications in the substrate itself. Through the cleaning process, the temperature of the calibration substrate may be controlled to limit adverse effects caused by the overheating of the calibration substrate.

Abstract: A system and method is provided for providing a thermal distribution on a workpiece during a lithographic process. The system provides a source of lithographic energy to workpiece, such as a workpiece having a lithographic film formed thereover. A workpiece support having a plurality of thermal devices embedded therein is configured to support the workpiece concurrent to an exposure of the workpiece to the lithographic energy. A controller individually controls a temperature of each of the plurality of thermal devices, therein controlling a specified temperature distribution across the workpiece associated with the exposure of the workpiece to the lithographic energy. Controlling the temperature of the thermal devices can be based on a model, a measured temperature of the workpiece, and/or a prediction of a temperature at one or more locations on the workpiece.

Abstract: A system includes an aperture array comprising a plurality of active apertures, respective ones of the active apertures configured to selectively deflect beams passing therethrough. The system also includes a limiting aperture configured to pass beams not deflected by the active apertures to a target object. The system further includes a control circuit configured to control the active apertures to provide first and second different exposure duration resolutions.

Abstract: In one embodiment, a multi charged-particle beam writing apparatus includes a plurality of blankers switching between ON and OFF state of a corresponding beam among multiple beams, a main deflector deflecting beams having been subjected to blanking deflection to a writing position of the beams in accordance with movement of a stage, a detector scanning a mark on the stage with each of the beams having been deflected by the main deflector and detecting a beam position from a change in intensity of reflected charged particles and a position of the stage, and a beam shape calculator switching an ON beam, scanning the mark with the ON beam, and calculating a shape of the multiple beams from a beam position. A shape of a deflection field of the main deflector is corrected by using a polynomial representing an amount of beam position shift that is dependent on a beam deflection position of the main deflector and then the mark is scanned with the ON beam. The polynomial is different for each ON beam.

Abstract: In one embodiment, a data processing method is for creating write data from design data, and registering the write data into a writing apparatus. The method includes applying, to a plurality of pieces of first frame data into which first chip data of the design data is divided, a plurality of conversion processes to create the write data, and applying a plurality of pre-processes to a plurality of pieces of second frame data into which second chip data of the write data is divided, and registering the second chip data into the writing apparatus. The plurality of conversion processes and the plurality of pre-processes are each performed in a pipeline processing on a per-frame basis. The write data is registered into the writing apparatus on a per-chip basis, on a per-virtual chip basis, or on a per-frame basis. The virtual chip includes a plurality of chips combined together.

Abstract: A radiation thermometer has a broadband light source which generates broadband light; an optical filter which, when the broadband light is incident on the measuring target object, passes only light in a predetermined wavelength range of reflected light and heat radiation light from a measuring target object; a light receiver which receives the light in the predetermined wavelength range through the optical filter; and a calculator which calculates a temperature of the measuring target object by using reflected light intensity and heat radiation intensity of the light in the predetermined wavelength range received by the light receiver, wherein an emission spectrum of the broadband light is a spectrum with a full width at half maximum which is equal to or wider than the predetermined wavelength range, and with light intensity increasing while a wavelength thereof becomes longer in the predetermined wavelength range.

Abstract: A method for manufacturing a semiconductor device includes obtaining a design layout for a target layer of an optical proximity correction process, the design layout including a first block and a second block being a repetition block of the first block, dividing the design layout into a plurality of patches, performing the optical proximity correction process on the patches of the first block, applying corrected patches of the first block to the patches of the second block, respectively, forming a correction layout by performing the optical proximity correction process on boundary patches of the second block, fabricating a photomask corresponding to the correction layout, and forming patterns on a substrate corresponding to the photomask. Each of the patches is a standard unit on which the optical proximity correction process is performed.

Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (17) comprising recesses (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element (17) is formed by etching the recesses (4) into the semiconductor material.

Abstract: Sample transferring can be securely and easily performed between an FIB device, an electron microscope, and an atom probe device, and atom probe analysis can be performed to a material that easily alters due to atmospheric exposure. A sample holder that holds a sample (12) is provided with an atmosphere-isolation mechanism that prevents the sample from altering due to the atmospheric exposure upon the sample transferring between the devices. There is provided a structure enabling of attaching and detaching a housing (21) of a sample holder leading end of a part of the atmosphere-isolation mechanism in an analytical vacuum device, such as the atom probe device.

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculate

Abstract: A mask frame assembly includes a frame, a first support bar, split masks, and a second support bar. The frame includes an opening. The first support bar spans the opening in a first direction, the first support bar includes first ends disposed on the frame. The split masks span the opening in a second direction crossing the first direction, the split masks include first portions disposed on the first support bar and second ends disposed on the frame. The second support bar is disposed on the first support bar, the second support bar being more magnetic than the first support bar.

Abstract: The invention relates to a charged particle beam exposure apparatus configured to expose cut patterns or via patterns on a substrate having a plurality of line patterns 81a arranged on an upper surface of the substrate at a constant pitch by irradiating the substrate with a plurality of charged particle beams B1 to Bn while moving a one-dimensional array beam A1 in an X direction parallel to the line patterns 81a, the one-dimensional array beam A1 being a beam in which the charged particle beams B1 to Bn are arranged in an Y direction orthogonal to the line patterns 81a.

Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two sweeps which each have a respective general direction, but the general direction is different for different sweeps, e.g. perpendicular to each other. Each stripe belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths, as measured across said main direction, of the stripes of one sweep combine into a cover of the total width of the region.

Abstract: A flow through Micro-Electromechanical Systems (MEMS) package and methods of operating a MEMS packaged using the same are provided. Generally, the package includes a cavity in which the MEMS is enclosed, an inlet through which a fluid is introduced to the cavity during operation of the MEMS and an outlet through which the fluid is removed during operation of the MEMS, wherein the package includes features that promote laminar flow of the fluid across the MEMS. The package and method are particularly useful in packaging spatial light modulators including a reflective surface and adapted to reflect and modulate a light beam incident thereon. Other embodiments are also provided.

Abstract: A plasma-generated EUV light source uses an EUV-diffracting collection mirror to channel spectrally pure in-band radiation through an intermediate-focus aperture and through EUV illumination optics. Out-of-band radiation is either undiffracted by the collection mirror or is diffractively scattered away from the aperture. The undiffracted portion, plus plasma-emitted radiation that does not intercept the collection mirror, can be efficiently recycled back to the plasma via retroreflecting mirrors, cat's-eye reflectors, or corner-cube reflectors, to enhance generation of in-band EUV radiation by the plasma.

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract: The invention teaches a system and method for catalyzing on a substrate. The system includes a light source and a digital light patterning device which is controlled by a controller coupled to a computer. The digital patterning device includes an array of liquid crystals, each of which being electronically controlled by the computer through the controller. When a liquid crystal is on, the light from the light source passes through the liquid crystal. When it is off, the light is blocked. According to the visual image pattern presented in the computer's interface, the array, wherein some crystals are on and some are off, shows a light pattern which is consistent with the visual image pattern on the computer screen. Accordingly, the patterned light is shed onto a substrate where the light catalyzes a chemical reaction proximate a substrate.

Abstract: A multi charged particle beam writing apparatus of the present invention includes an aperture member to form multiple beams, a plurality of first deflectors to respectively perform blanking deflection of a corresponding beam, a second deflector to collectively deflect the multiple beams having passed through the plurality of openings of the aperture member so that the multiple beams do not reach the target object, a blanking aperture member to block each beam that has been deflected to be in the off state by the plurality of first deflectors, and a current detector, arranged at the blanking aperture member, to detect a current value of all beams in the on state in the multiple beams that have been deflected by the second deflector.

Abstract: A writing apparatus includes a writing unit to include a deflector for deflecting a charged particle beam and write a pattern on a target object by the charged particle beam, a decision unit to decide a representative position of a deflection result range in which the charged particle beam was deflected with respect to a writing direction by the deflector, and a correction unit to correct drift of the charged particle beam by using a drift amount at the representative position of the deflection result range.

Abstract: The present disclosure provides various methods for tuning process parameters of a process tool, including systems for implementing such tuning. An exemplary method for tuning process parameters of a process tool such that the wafers processed by the process tool exhibit desired process monitor items includes defining behavior constraint criteria and sensitivity adjustment criteria; generating a set of possible tool tuning process parameter combinations using process monitor item data associated with wafers processed by the process tool, sensitivity data associated with a sensitivity of the process monitor items to each process parameter, the behavior constraint criteria, and the sensitivity adjustment criteria; generating a set of optimal tool tuning process parameter combinations from the set of possible tool tuning process parameter combinations; and configuring the process tool according to one of the optimal tool tuning process parameter combinations.

Abstract: In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating the apparatus includes making a shot of a first pattern, controlling a deflection amount by the deflector to move an applied position of the beam from the first pattern along a first direction to make a shot of a second pattern, controlling the deflection amount to move the applied position from the second pattern along the first direction to make a shot of a third pattern, controlling the deflection amount to move the applied position from the third pattern along a second direction opposite to the first direction to make a shot of a fourth pattern between the second pattern and the third pattern, calculating an interval between the second pattern and the fourth pattern, and comparing the calculated interval to a reference interval.

Abstract: A charged particle beam writing method according to embodiments of the present disclosure includes: storing in a charged particle beam writing apparatus a position coordinate at which a drift amount is diagnosed; storing in the charged particle beam writing apparatus first and second time interval patterns which define time intervals to diagnose the drift amount of the charged particle beam; performing first writing of irradiating a target object with the charged particle beam, and writing a writing pattern on the target object while diagnosing the drift amount based on the first time interval pattern during the writing; and performing second writing of writing a predetermined writing pattern while diagnosing the drift amount when the writing reaches the position coordinate and diagnosing the drift amount based on the second time interval pattern during the writing after the writing reaches the position coordinate.

Abstract: Techniques for reducing the number of shots required by a radiation beam writing tool to write a pattern, such as fractured layout design, onto a substrate. One or more apertures are employed by a radiation beam writing tool to write a desired pattern onto a substrate using L-shaped images, T-shaped images, or some combination of both. By reducing the number of shots required to write a pattern onto a substrate, various implementations of the invention may reduce the write time and/or write complexity of the write process.

Abstract: A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged; and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated.

Abstract: A system and method for mask data preparation (MDP) uses pixel processing algorithms running on parallel processing platforms such as central processing units (CPUs) and graphical processing units (GPUs). Proximity effects correlation, dose, and bias corrections are performed on a pixel basis. In some embodiments, striping of a decorated database in parallel using multiple graphic processors is performed. While performing a first light path simulation for a first stripe for a mask, a second light path simulation is performed for a second stripe for the mask. Using a result of the striping and first and second light path simulations, dose adjustment during a mask processing on a pixel of the mask is performed.

Abstract: The present invention provides a method of extracting a transformation pattern as an approximate pattern expression. In the process of transforming the sets of input strings to at least one pattern expression, the transformation pattern transforming the sets of input strings to the pattern expression. The method includes: 1) preparing one structure including multiple nodes each representing a state and multiple edges each representing a transition; 2) generating a first reduced structure by removing at least one state in one structure from one structure and by merging at least two edges including an edge associated with the removed state in the one structure; 3) generating a first approximate pattern expression based on the first reduced structure; and 4) presenting the first approximate pattern expression.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: The present disclosure provides one embodiment of a reflective electron-beam (e-beam) lithography system. The reflective e-beam lithography system includes an e-beam source to generate an e-beam; a digital pattern generator (DPG) having a plurality of pixels that are dynamically and individually controllable to reflect the e-beam; a substrate stage designed to secure a substrate and being operable to move the substrate; an e-beam lens module configured to project the e-beam from the DPG to the substrate; and an alignment gate configured between the e-beam source and the DPG, wherein the alignment gate is operable to modulate an intensity of the e-beam.

Abstract: A apparatus, includes a unit to operate a number of other correction processing sections written before a relevant correction processing section, to ensure that a calculation time to calculate amounts of temperature rise for the all correction processing sections to does not exceed a pattern writing time for the all correction processing sections by using an average pattern writing time, an average calculation time for one of the amounts of temperature rise, and a degree of parallelism of computers to calculate the amounts of temperature rise; a unit to calculate a representative temperature of the relevant correction processing section based on heat transfers from the other correction processing sections of the number; and a unit to modulate a dose of beam irradiated on the relevant correction processing section by using the representative temperature.

Abstract: A system using an energy beam to expose patterns on a wafer includes first mirror elements, a multiplexer element, and second mirror elements. The first and second mirror elements are dynamically controlled to reflect the energy beam to the wafer. The first mirror elements are configured in a first chain having a first data input and a first data output. The multiplexer element includes a second data input, a third data input, a select input, and a second data output. The third data input is coupled to the first data output. The second mirror elements are configured in a second chain having a fourth data input.

Abstract: A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.

Abstract: A charged particle beam writing apparatus includes a shot division unit configured to divide a figure defined in layout data into a plurality of shot figures each having a size which can be irradiated by one shot of a charged particle beam, a shot data generating unit configured to generate each shot data for each shot figure of the plurality of shot figures, where a number of times of generating the each shot data equals a number of times of multiple writing of the each shot figure of the plurality of shot figures, such that multiplicity of the multiple writing is variable per the each shot figure, and a writing unit configured to perform the multiple writing of the each shot figure onto a target workpiece, in accordance with the number of times of the each shot data generated for the each shot figure, using a charged particle beam.

Abstract: A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Abstract: The purpose of the present invention is to provide an image processing apparatus and a computer program such that correspondence points between design data and an edge line or between edge lines can be accurately identified for their matching. In an embodiment for achieving the purpose, when positioning between a first pattern formed by a first line segment and a second pattern formed by a second line segment is performed, a first correspondence point and a second correspondence point are set on the first line segment and the second line segment, respectively; a degree of alignment for performing the positioning of the first pattern and the second pattern is calculated on the basis of the distance between the first correspondence point and the second correspondence point; and the position of the first correspondence point and/or the second correspondence point is changed in accordance with a shape difference between the first line segment and the second line segment (see FIG. 2).

Abstract: A multi charged particle beam writing apparatus includes a beam forming member, where first openings for writing and second openings not for writing around the first openings are formed, to form multiple beams for writing and to form multiple beams for measurement, plural mark members on a blanking aperture member arranged close to the height position where crossover is formed, a measurement unit to measure positions of the multiple beams for measurement by the plural mark members, and a correction unit to correct a voltage for making a “beam on” state applied to one of the plural blankers, in order to correct a position deviation amount of a measured position.

Abstract: A charged particle beam writing apparatus includes first and second transmission units to perform first and second transmission processing, where, in the first transmission processing, while one of the units performs data transmission processing, the other unit inputs processing data for N processing regions more than pre-set, data-converted, n processing regions, and while one of the units performs data input processing, the other transmits processing data for (N-n) processing regions in order, and in the second transmission processing, processing data for remaining n processing regions are transmitted in order after the first transmission processing, where one of the units starts inputting the processing data while the other performs the first transmission processing, and does not input processing data for a new processing region after starting the second transmission processing.

Abstract: A beam writing apparatus includes a unit to obtain a specific value by calculating an integer by dividing a total irradiation time by a multiplied value of a region number and a repeating times number, and by multiplying the integer by the repeating times number, to add the repeating times number to the specific value when a region is in the multiple writing unit regions and is not a specific region and when a region number of the multiple writing unit region, defined excluding the specific region, is below or equal to a value obtained by dividing the total irradiation time by the multiplied value of the region number and the repeating times number, to obtain a first remainder, and dividing the first remainder by the repeating times number, and to treat an added value of the repeating times number and the specific value, as a total irradiation time.

Abstract: Techniques for reducing the number of shots required by a radiation beam writing tool to write a pattern, such as fractured layout design, onto a substrate. One or more apertures are employed by a radiation beam writing tool to write a desired pattern onto a substrate using L-shaped images, T-shaped images, or some combination of both. By reducing the number of shots required to write a pattern onto a substrate, various implementations of the invention may reduce the write time and/or write complexity of the write process.

Abstract: To provide an electrostatic lens which improves an irradiation accuracy of an electron beam while satisfying the need for higher throughput. An electrostatic lens according to one embodiment of the present invention includes a substrate which includes an insulating plate in which a plurality of first through holes that allow an electron beam to pass through are formed, a plurality of electrodes that are formed on an inner wall of the plurality of first through holes, and a plurality of wirings that are formed on the insulating plate and are electrically connected to each of the electrodes, wherein the plurality of electrodes are electrically independent from each other.

Abstract: A charged particle beam focusing apparatus includes a charged particle beam generator configured to project simultaneously at least one non-astigmatic charged particle beam and at least one astigmatic charged particle beam onto locations on a surface of a specimen, thereby causing released electrons to be emitted from the locations. The apparatus also includes an imaging detector configured to receive the released electrons from the locations and to form images of the locations from the released electrons. A processor analyzes the image produced by the at least one non-astigmatic charged particle beam and in response thereto adjusts a focus of the at least one non-astigmatic charged particle beam.

Abstract: A multi charged particle beam writing apparatus of the present invention includes an aperture member to form multiple beams, a plurality of first deflectors to respectively perform blanking deflection of a corresponding beam, a second deflector to collectively deflect the multiple beams having passed through the plurality of openings of the aperture member so that the multiple beams do not reach the target object, a blanking aperture member to block each beam that has been deflected to be in the off state by the plurality of first deflectors, and a current detector, arranged at the blanking aperture member, to detect a current value of all beams in the on state in the multiple beams that have been deflected by the second deflector.

Abstract: A blanking device for multiple charged particle beams includes plural shift registers, arranged in two dimensions, to form plural groups each including shift registers, connected in series, of the plural shift registers, plural blankers to respectively provide a blanking deflection to a corresponding beam of multiple beams each controlled through a corresponding shift register in the plural shift registers, plural serial parallel conversion units, arranged along the four sides of a quadrangular region which surrounds the whole of the plural shift registers, to be respectively connected by parallel wiring to at least one of the plural groups, and plural pads, arranged along the four sides of the quadrangular region, to be respectively in combination with a corresponding serial parallel conversion unit of the plural serial parallel conversion units such that each of the plural pads is connected by single wiring to the corresponding serial parallel conversion unit.

Abstract: A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s).

Abstract: Metrology is performed using multiple registered images derived from one or more charged particle beams. Measurements combine features from one image that may not be visible in a second image to determine relationships that cannot be determined from a single image. In one embodiment, measurements use features from different element maps to determine a relationship between features, such as a distance or angle between two features in the first image at a location determined by a distance from a feature on the second image.

Abstract: A crystal analysis apparatus includes: a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals; a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs; and a map constructing unit that constructs a three-dimensional crystal orientation map based on distribution of crystal orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation database on the basis of the EBSP data stored in the measurement data storage.

Abstract: The present invention relates to a method for drawing data that indicates a timing at which a substrate is irradiated with a beam. The method includes determining whether or not a mark to be irradiated with the beam exists in a predetermined region on a substrate. The method further includes creating, in a case where the mark exists in the predetermined region, the drawing data such that a mark region including the mark is irradiated with the beam at a predetermined timing after a region other than the mark region is irradiated with the beam.

Abstract: The present invention provides a blanking apparatus comprising a plurality of blankers configured to respectively blank a plurality of beams with respect to a target position on an object, and a driving device configured to drive the plurality of blankers, wherein the driving device includes a change device configured to change relation between a combination of beams of the plurality of beams, and a target dose.

Abstract: The invention relates to a collimator electrode, comprising an electrode body (81) that is provided with a central electrode aperture (82), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit (105) inside the electrode body for transferring a cooling liquid (102). The electrode body preferably has a disk shape or an oblate ring shape. The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit (105) for transferring the cooling liquid (102), and a connecting conduit (110) for a liquid connection between the cooling conduits of the first and second collimator electrodes.

Abstract: An electrostatic lens comprising a first conductive plate with a first aperture, a second conductive plate with a second aperture, the second aperture being substantially aligned with the first aperture, a voltage supply for supplying a first voltage to the first conductive plate and a second voltage to the second conductive plate, the first voltage being lower than the second voltage, and an insulating structure for separating the first conductive plate from the second conductive plate. The insulating structure comprises a first portion in contact with the first conductive plate and a second portion in contact with the second conductive plate, the first portion having an overhanging portion and the second portion having an indented portion at an edge of the insulating structure, so that a gap is formed between the overhanging portion and the second conductive plate.