Abstract: Metrology for ultrathin dielectric layers of the order of less than 10 nanometers in thickness is achieved by specular ellipsometry in a totally controlled ambient between the light source and the detector, in which, a precise 2.75 through 9.0 eV photon energy range continuum of light is employed. In the signal analysis there is the taking into consideration the effect of noise in the development of the ellipsometric parameter values and in the resulting data. In the invention the precise photon energy range operates to sharpen the identifiability of the change parameters imparted into the reflected light in the ellipsometry while minimizing absorption and signal definiteness masking; and the taking into consideration of noise in the signal analysis involves providing a simulated noise spectrum for comparison with the least squares fitting algorithm-derived parameters to determine the quality of the minimum and the reliability of the inferred parameters.

Abstract: A fastener system employs a portable, sensing device, such as one or more reactance capacitors or an image processor such as a camera or a laser, which removably attaches adjacent to the fastener to detect and measure the change in a gap or specialized form of the bolt head or associated washer caused by the relative movement of portions of the fastener system when the fastener is under strain without contacting the sensed portions undergoing the significant relative movement. Associated electronic components process and indicate the clamp load of the fastener system.

Abstract: A method of planarizing a first side of a semiconductor wafer with a polishing system includes the step of polishing the first side of the wafer in order to remove material from the wafer. The method also includes the step of moving a lens of a confocal optical system between a number of lens positions so as to maintain focus on the first side of the wafer during the polishing step. The method further includes the step of determining a rate-of-movement value based on movement of the lens during the moving step. Moreover, the method includes the step of stopping the polishing step if the rate-of-movement value has a predetermined relationship with a movement threshold value. An apparatus for polishing a first side of a semiconductor wafer is also disclosed.

Abstract: A method and apparatus of measuring wall thickness of hollow glass articles, such as molded glass containers having interior and exterior wall surfaces, includes the steps of measuring intensity of radiation emitted by the article at a first wavelength at which intensity varies as a function of both temperature at the surfaces and wall thickness between the surfaces, and at a second wavelength at which intensity varies as a function of temperature at the surface substantially independent of wall thickness between the surfaces. Since the first intensity measurement is a function of both wall thickness and temperature, while the second intensity measurement is a function solely of surface temperature, wall thickness between the surfaces can determined as a combined function of the first and second intensity measurements.

Abstract: A spectrometer for providing multiple, simultaneous spectra from independent light sources is described characterized in that light from the multiple sources is directed to different portions of a diffraction grating, and the wavelength components of the resultant spectra are directed to at least one receptor.