Additional Diverse Metal Containing Patents (Class 252/519.51)
  • Patent number: 10546671
    Abstract: A voltage nonlinear resistor according to the present invention includes a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components. The accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: January 28, 2020
    Assignee: HITACHI, LTD.
    Inventors: Motoyuki Miyata, Junichiro Miyake, Koichi Tsuda
  • Patent number: 9944802
    Abstract: The present invention relates to a composition for forming a solar cell electrode, comprising: silver (Ag) powder; a glass frit comprising silver (Ag) and tellurium (Te) elements; and an organic vehicle, wherein the glass frit has a mole ratio of 1:01 to 1:25 of Ag to Te. The solar cell electrode produced from the composition has excellent fill factor and conversion efficiency as contact resistance (Rc) and series resistance (Rs) are minimized.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 17, 2018
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Sang Hee Park, Hyun Jin Koo, Tae Joon Kim, Hun Gyu Song
  • Patent number: 9911872
    Abstract: A composition for solar cell electrodes and electrodes fabricated using the same. The composition includes a silver (Ag) powder; a glass frit containing about 0.1 mole % to about 50 mole % of elemental silver; and an organic vehicle, wherein the elemental silver derives from a silver halide (Ag—X). The composition introduces a glass frit including a silver halide to enhance contact efficiency between electrodes and a silicon wafer, and solar cell electrodes prepared from the composition have minimized contact resistance (Rc), specific contact resistivity, and serial resistance (Rs), thereby exhibiting excellent conversion efficiency.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: March 6, 2018
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Sang Hee Park, Tae Joon Kim, Hun Gyu Song
  • Patent number: 9812753
    Abstract: Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: November 7, 2017
    Assignee: Skyworks Solutions, Inc.
    Inventor: Michael D. Hill
  • Patent number: 9376346
    Abstract: The invention relates to the use of a material having a spinel ferrite/iron monoxide structure as a sensitive material in the form of a thin film for the bolometric detection of infrared radiation, the chemical composition of said structure, excluding doping agents that may be present, having empirical formula (I): (Fe1?zMz)xO, where x is strictly less than 1 and strictly greater than 0.75. The invention also relates to a bolometric device for infrared radiation detection and infrared imaging, comprising at least one sensor provided with a sensitive element in the form of a thin film as defined above.
    Type: Grant
    Filed: June 11, 2009
    Date of Patent: June 28, 2016
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE, UNIVERSITE PAUL SABATIER (TOULOUSE III), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Philippe Tailhades, Lionel Presmanes, Corinne Bonningue, Bruno Mauvernay, Jean-Louis Ouvrier-Buffet, Agnes Arnaud, Wilfried Rabaud
  • Patent number: 9178073
    Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: November 3, 2015
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Patent number: 9093190
    Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: July 28, 2015
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Rakesh Agrawal, Hugh W. Hillhouse, Qijie Guo
  • Patent number: 9058914
    Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: June 16, 2015
    Assignee: KOBELCO RESEARCH INSTITUTE, INC.
    Inventors: Hiroshi Goto, Yuki Iwasaki, Masaya Ehira, Yoichiro Yoneda
  • Patent number: 9028725
    Abstract: A process for densifying a composite material is provided. In some instances, the process can reduce stress in a sintered component such that improved densification and/or properties of the component is provided. The process includes providing a mixture of a first material particles and second material particles, pre-sintering the mixture at a first pressure and a first temperature in order to form a pre-sintered component, and then crushing, grinding, and sieving the pre-sintered component in order to form or obtain a generally uniform composite powder. The uniform composite powder is then sintered at a second pressure and a second temperature to form a sintered component, the second pressure being greater than the second pressure.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: May 12, 2015
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Li Qin Zhou, Michael Paul Rowe
  • Patent number: 9005489
    Abstract: A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: April 14, 2015
    Assignee: Hitachi Metals, Ltd.
    Inventors: Hiroyuki Uchiyama, Hironori Wakana
  • Publication number: 20150079863
    Abstract: The present disclosure is directed to composite or articles for protective clothing, which include an anti-static layer. The antistatic layer can 1), include an antistatic agent comprising an electronically conductive material, and the antistatic layer can have a visible light transmission of at least 70%; 2) the anti-static layer can have a surface electrical resistivity (SER), and/or a water electrode resistivity (WER) of no greater than 1011 ohms/square and a visible light transmission of at least 70%; or 3) the anti-static layer has an electrical resistivity, measured in ohms/square, which varies by no more than 1.5 order of magnitude over a range of relative humidity of 5% to 95%, and a visible light transmission of at least 70%.
    Type: Application
    Filed: August 8, 2014
    Publication date: March 19, 2015
    Inventors: Debasis Majumdar, Ryan C. Hirschey, Jenna Reynolds
  • Patent number: 8961828
    Abstract: The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: February 24, 2015
    Assignee: The Regents of the University of California
    Inventors: Raffaella Buonsanti, Delia J. Milliron
  • Publication number: 20150034885
    Abstract: In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.
    Type: Application
    Filed: March 28, 2012
    Publication date: February 5, 2015
    Applicant: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
    Inventors: Takahiro Shirahata, Hiroyuki Orita, Takahiro Hiramatsu
  • Patent number: 8932495
    Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: January 13, 2015
    Assignee: Clearist, Inc.
    Inventors: Paul Phong Nguyen, Scott Allen Jewhurst
  • Patent number: 8900489
    Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: December 2, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Peter Neil Taylor, Jonathan Heffernan, Stewart Edward Hooper, Tim Michael Smeeton
  • Patent number: 8871119
    Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: October 28, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima
  • Patent number: 8865028
    Abstract: Disclosed herein is a ZnO-based varistor composition including zinc oxide (ZnO) as a main component and a calcium (Ca)-containing compound as an accessory component. The varistor composition provides excellent electrostatic discharge (ESD) characteristics because it has excellent physical properties, such as a nonlinear coefficient, a clamping voltage ratio, a surge absorbance and the like, and, particularly, does not include Bi2O3. Further, the varistor composition provides high work safety because it does not include Sb2O3 that is regulated for environmental purposes. Further, the varistor composition can reduce the manufacturing cost of a varistor because it does not Pr-based components that require high-temperature sintering and increase the manufacturing cost of a varistor. Particularly, the varistor composition has a low clamping voltage as well as a low capacitance.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: October 21, 2014
    Assignee: Amotech Co. Ltd.
    Inventors: Youn-Woo Hong, Hyo-Soon Shin, Dong-Hun Yeo, Sang-Sub Roh, Kyung-Pyo Hong, Jun-Hwan Jeong
  • Patent number: 8835052
    Abstract: A negative electrode active material for an electric device. The negative electrode active material including an alloy having a composition formula SixTiyZnz, where (1) x+y+z=100, (2) 38?x<100, (3) 0<y<62, and (4) 0<z<62 in terms of mass percent.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: September 16, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Manabu Watanabe, Osamu Tanaka
  • Patent number: 8822075
    Abstract: A negative electrode active material for an electric device, including an alloy having a composition formula SixZnyAlz, where x++y=100 , 26?x?47, 18?y?44, and 22?z?46 are satisfied.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: September 2, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Manabu Watanabe, Osamu Tanaka, Takashi Miyamoto
  • Publication number: 20140220362
    Abstract: The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.
    Type: Application
    Filed: July 24, 2012
    Publication date: August 7, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Delia Milliron, Anna Llordes, Raffaella Buonsanti, Guillermo Garcia
  • Patent number: 8784698
    Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: July 22, 2014
    Assignee: Vanderbilt University
    Inventors: Michael A. Schreuder, James R. McBride, Sandra J. Rosenthal
  • Patent number: 8784701
    Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: July 22, 2014
    Assignee: Nanoco Technologies Ltd.
    Inventors: Nigel Pickett, James Harris
  • Patent number: 8771560
    Abstract: In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10?3 ?cm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: July 8, 2014
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Ulrich Kretzer, Stefan Eichler, Thomas Bünger
  • Patent number: 8771555
    Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: July 8, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Yueh-Chun Liao, Feng-Yu Yang, Ching Ting
  • Patent number: 8765028
    Abstract: Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: July 1, 2014
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Hyun Jae Kim, You Seung Rim, Dong Lim Kim
  • Patent number: 8758653
    Abstract: A material and method for producing mesostructured materials with multiple functionalities that are independently adjustable and collectively optimizable is provided. The method uses a series of discrete synthesis steps under otherwise mutually incompatible conditions, e.g., from acidic, alkaline, and/or non-aqueous solutions, allows different functionalities to be introduced to the materials and optimized. To illustrate the method, cubic mesoporous silica films were prepared from strongly acidic solutions that were separately functionalized under highly alkaline conditions to incorporate hydrophilic aluminosilica moieties and under non-aqueous conditions to introduce perfluorosulfonic-acid surface groups.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: June 24, 2014
    Assignee: The Regents of the University of California
    Inventors: Bradley F. Chmelka, George L. Athens, Robert Messinger
  • Patent number: 8753548
    Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.
    Type: Grant
    Filed: December 7, 2009
    Date of Patent: June 17, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima
  • Patent number: 8747708
    Abstract: The present invention relates to a transparent, electrically conductive floor care composition, in particular for antistatic flooring, which is distinguished by the fact that it comprises one or more conductive pigments.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: June 10, 2014
    Assignee: Merck Patent GmbH
    Inventors: Reinhold Rueger, Matthias Kuntz, Christina Maggakis-Kelemen
  • Patent number: 8747630
    Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: June 10, 2014
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Yuki Yoshida, Timothy J. Coutts
  • Publication number: 20140145124
    Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.
    Type: Application
    Filed: April 27, 2012
    Publication date: May 29, 2014
    Inventors: Misa Sunagawa, Masayuki Itose, Mami Nishimura, Masashi Kasami
  • Patent number: 8734621
    Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
    Type: Grant
    Filed: January 16, 2007
    Date of Patent: May 27, 2014
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Yuki Yoshida, Timothy J. Coutts
  • Patent number: 8721926
    Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 13, 2014
    Assignee: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Patent number: 8696949
    Abstract: A particulate mixture which can be used as a precursor of lithium transition metal silicate-type compound of small particle size and low crystallinity, is provided. It is a mixture of silicon oxide particulates, transition metal oxide particulates, and lithium transition metal silicate particulates, and its powder X-ray diffraction measurement shows diffraction peaks near 2?=33.1° and near 2?=35.7°, and said silicon oxide particulates and said transition metal oxide particulates are amorphous, and said lithium transition metal silicate particulates are in a microcrystalline or amorphous state.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: April 15, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Michio Ohkubo, Takeshi Yagi, Michihiro Shimada, Naoki Uno, Yosuke Hirayama, Takeshi Nishimura, Toshio Tani
  • Patent number: 8668849
    Abstract: A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: March 11, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Masashi Kasami
  • Publication number: 20140054518
    Abstract: A process for making a corrosion-resistant metal component. The process having the steps of: combining water, at least one zinc phosphate compound and at least one chromium compound, being chromium (III) or chromium (IV) compounds, to form a first solution; separately combining at least one silicate compound with water to form a second solution; combining the first solution with the second solution such as to form a mixed aqueous solution; optionally combining the mixed aqueous solution with at least one acrylic resin to form a coating mixture; and, applying the coating mixture to a metal substrate having a zinc or zinc-alloy surface to form a coating on the metal substrate, the coating providing chemical resistance for at least 150 hours in accordance with ASTM B 117 standards where the zinc or zinc-alloy coating of the metal substrate has a weight of 0.04 oz/ft2 (12.20 g/m2).
    Type: Application
    Filed: October 22, 2013
    Publication date: February 27, 2014
    Applicant: ECO-GREEN COATINGS, L.L.C.
    Inventors: William D. KRIPPES, Theodore JAROSZ, Mike SERAFINI, William CAPIZZANO
  • Patent number: 8641932
    Abstract: A composite oxide sintered body includes In2Ga2ZnO7 having a homologous crystal structure, and has a relative density of 90% or more, and an average crystal grain size of 10 ?m or less.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: February 4, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima
  • Patent number: 8603364
    Abstract: A phosphor includes semiconductor nanoparticles formed of compound semiconductor, and conductive transparent compounds. The semiconductor nanoparticles may be dispersed in or on the conductive transparent compounds. The resistivity of the conductive transparent compounds is preferably less than or equal to 10 ?cm.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: December 10, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Makoto Izumi, Noboru Iwata, Kazunori Annen
  • Publication number: 20130314646
    Abstract: The present invention relates to a fluorescent powder mixture, a manufacturing method for the same, and a corresponding liquid crystal display device. The fluorescent powder mixture is a mixture of a conductive powder and a fluorescent powder, wherein the conductive powder is aluminum zinc oxide, gallium zinc oxide, or indium tin oxide. The fluorescent powder mixture, the manufacturing method for the same, and the corresponding liquid crystal display device of the present invention increase the conductivity of the fluorescent powder, and further weaken the electron enrichment phenomenon on the surface of the fluorescent powder, so as to increase the illumination performance of the fluorescent powder.
    Type: Application
    Filed: June 8, 2012
    Publication date: November 28, 2013
    Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.
    Inventor: Yewen Wang
  • Patent number: 8580157
    Abstract: The sulfide has the following composition, and the photoelectric element uses the sulfide. (1) The sulfide contains Cu, Zn, and Sn as a principal component. (2) When x is a ratio of Cu/(Zn+Sn), y is a ratio of Zn/Sn (x and y being atomic ratios), and the composition of the sulfide is represented by the (x, y) coordinates, with the points A=(0.78, 1.32), B=(0.86, 1.32), C=(0.86, 1.28), D=(0.90, 1.23), E=(0.90, 1.18), and F=(0.78, 1.28), the composition (x, y) of the sulfide is on any one of respective straight lines connecting the points A?B?C?D?E?F?A in that order, or within an area enclosed by the respective straight lines.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: November 12, 2013
    Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Institute of National Colleges of Technology, Japan
    Inventors: Tatsuo Fukano, Tomoyoshi Motohiro, Hironori Katagiri
  • Patent number: 8569192
    Abstract: A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 ?m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: October 29, 2013
    Assignee: Tosoh Corporation
    Inventors: Hideto Kuramochi, Kenji Omi, Masanori Ichida, Hitoshi Iigusa
  • Patent number: 8568621
    Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: October 29, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masahito Matsubara, Masashi Ohyama
  • Patent number: 8562859
    Abstract: A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: October 22, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomoaki Kato, Iwao Kawamata, Yoshio Takada
  • Patent number: 8551370
    Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: October 8, 2013
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
  • Publication number: 20130240881
    Abstract: A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether.
    Type: Application
    Filed: November 22, 2011
    Publication date: September 19, 2013
    Applicant: Ricoh Company, Ltd.
    Inventors: Yuki Nakamura, Naoyuki Ueda, Yukiko Abe, Yuji Sone
  • Publication number: 20130244109
    Abstract: The present technology is able to provide a solid electrolyte cell that uses a positive electrode active material which has a high ionic conductivity in an amorphous state, and a positive electrode active material which has a high ionic conductivity in an amorphous state. The solid electrolyte cell has a stacked body, in which, a positive electrode side current collector film, a positive electrode active material film, a solid electrolyte film, a negative electrode potential formation layer and a negative electrode side current collector film are stacked, in this order, on a substrate. The positive electrode active material film is made up with an amorphous-state lithium phosphate compound that contains Li; P; an element M1 selected from Ni, Co, Mn, Au, Ag, and Pd; and O, for example.
    Type: Application
    Filed: December 2, 2011
    Publication date: September 19, 2013
    Applicant: Sony Corporation
    Inventors: Yuichi Sabi, Susumu Sato, Saori Tsuda
  • Patent number: 8535575
    Abstract: A current-voltage non-linear resistor (10) comprises a sintered body (20) of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 ?m; and the average grain size of the zinc oxide grains in the sintered body (20) is no more than 7.5 ?m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body (20) is no more than 15% of the average grain size of the zinc oxide grains.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: September 17, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasunori Kasuga, Hideyasu Ando
  • Patent number: 8536570
    Abstract: Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound.
    Type: Grant
    Filed: December 30, 2011
    Date of Patent: September 17, 2013
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Hyun Jae Kim, Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim
  • Publication number: 20130234081
    Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.
    Type: Application
    Filed: November 11, 2011
    Publication date: September 12, 2013
    Applicant: KOBELCO RESEARCH INSTITUTE, INC.
    Inventors: Hiroshi Goto, Yuki Iwasaki, Masaya Ehira, Yoichiro Yoneda
  • Patent number: 8529802
    Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Baek Seon, Sang-Yoon Lee, Jeong-il Park, Myung-Kwan Ryu, Kyung-Bae Park
  • Patent number: 8524123
    Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: September 3, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Akira Kaijo, Satoshi Umeno, Tokie Tanaka