Abstract: The present invention relates to the field of opto-electronic technology and is intended to create transparent conductive layers. More concretely, the invention relates to the field of production of ceramic materials and is intended for using in manufacturing the ceramic targets, which serve as a source of material for magnetron, electron-beam, ion-beam and other films application methods in micro-, opto-, nanoelectronics, as well as to films produced from such a ceramic target and to a method for preparing such films. Disclosed is a ceramic target on the basis of zinc oxide doped with gallium containing from 0.5 to 6 atomic % of gallium and from 0.1 to 2 atomic % of boron, a portion of gallium and boron being contained in zinc oxide crystallites as a substitution admixture, and the rest portion of gallium and boron being contained together with zinc in the amorphous intergranular phase.

Abstract: Composites comprising at least one hollow fibre of oxygen-transporting ceramic material, which is a ceramic material which conducts oxygen anions and electrons or a combination of ceramic material which conducts oxygen anions and a ceramic or nonceramic material which conducts electrons, with the outer surface of the hollow fibre being in contact with the outer surface of the same hollow fibre or another hollow fibre and the contact points being joined by sintering, are described. Further composites comprise at least one hollow fibre of oxygen-transporting ceramic material which is a ceramic material which conducts oxygen anions and electrons or a combination of ceramic material which conducts oxygen anions and ceramic or nonceramic material which conducts electrons and a connection element for the introduction or discharge of fluids at at least one end face, with hollow fibres and connection element being joined.

Abstract: Provided herein are new methods for the fabrication of gold (Au) alloys and films containing metal or semimetal oxides such as oxides of vanadium (V), for example, Au—V2O5 for use in electrical, mechanical, and microelectromechanical systems (“MEMS”). An example embodiment provides a thin film of an alloy comprising Au—V2O5 in a MEMS for a contact switch. Also described herein are gold-metal oxide thin films for use in, e.g. wear-resistant MEMS. Measurements of contact force and electrical contact resistance between pairs of Au or Au—V films show that increased hardness and resistivity in the alloy films results in higher contact resistance and less adhesion than in pure Au.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

Abstract: The invention relates to a method for the production of a conductive and transparent zinc oxide layer on a substrate by reactive sputtering. The process comprises a hysteresis region. Said method is characterised by the following steps: A doped metal Zn target is used, whereby the doping content of the target is less than 2.3 at-%, the heater is adjusted for the substrate in such a manner that a substrate temperature is adjusted to above 200° C. A dynamic deposition rate is adjusted to more than 50 nm*m/min, which corresponds to a static deposition rate which is greater than 190 nm/min, and a stabilised working point is selected within the unstable process range which is between the turning point between a stable, metal and unstable process and between the inflection point of the stabilised process curve.

Abstract: Provided herein are electroactive agglomerated particles, which comprise nanoparticles of a first electroactive material and nanoparticles of a second electroactive materials, and processes of preparation thereof.

Abstract: A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.

Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.

Abstract: In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventing color change of the dielectric layer from being caused due to reaction with Ag electrodes in the plasma display panel. Ceramics powder can be mixed with the glass powder. The dielectric composition can also be provided in a form of paste, alternatively in a form of a green sheet.

Abstract: This invention provides a method of producing a laminate type dielectric device free from peeling of an electrode layer and a ceramic layer and from voids in both electrode layer and ceramic layer, and an electrode paste material. The invention relates also to an electrode paste material for constituting electrode layers of a laminate type dielectric device produced by at least the steps of alternately laminating ceramic layers 11 containing a lead element as a constituent component and electrode layers 2, and degreasing and baking the laminate, wherein the electrode paste material contains CuO as a principal component of a starting material of an electrically conductive material, a solvent, a binder, and a cooperative material consisting of at least one kind of the main components constituting the ceramic layer 11.

Abstract: The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2O3, or a mixed sintered body of aY(Cr0.5Mn0.5)O3.b(Al2O3+Y2O3) made of Y(Cr0.5Mn0.5)O3, Al2O3 and Y2O3. The mole fractions a and b have the relationships 0.05?a<1.0, 0<b?0.95 and a+b=1. This is required to obtain a thermistor device that has stable characteristics and exhibits a small change in its resistance value, even in a heat history from room temperature to 1000° C. or the like, and also has a resistance value of 50? to 100 k? in the temperature range from room temperature to 1000° C. The precursor compounds triethoxy yttrium, diethoxy manganese and tris (2,4-pentadiono) chromium are mixed in a mixed solvent of ethanol and isopropyl alcohol, and refluxing is performed to obtain a composite metal alkoxide solution.

Abstract: An emulsion for preparing a low-conductivity surface for powder coating, the emulsion including an emulsified organofunctional silane solution. A pre-powder coating emulsion provides a surface with conductivity. A non-conductive object having applied to an exterior surface of the object the emulsion including an emulsified organofunctional silane solution.

Abstract: A sputtering target containing a hexagonal laminar compound formed of indium oxide and zinc oxide and represented by In2O3(ZnO)m wherein m is an integer of 2 to 7 and further contains 0.01 to 1 at % of an oxide of a third element having a normal valence of 4 or more, and a transparent electrically conductive film formed therefrom. The sputtering target has a low volume resistivity and permits stable sputtering. The transparent electrically conductive film is excellent in etchability.

Abstract: The present invention relates generally to conductive, silicone-based compositions, with improved initial adhesion and reduced micro-voiding. More specifically, the present invention relates to a conductive, silicone-based composition, which includes a polyorganosiloxane, a silicone resin, and a conductive filler component.

Abstract: A composition of material used for making hfMLCIs having a sintering temperature below 1000°. The composition comprises a major component and a minor component, said major component being a general formula: Ba3Co2-x-yZnxCuyMnxFe24-z-wO41, wherein x, z, w,=0-1.0 and y=0-0.8, and said minor component comprising at least one compound selected from the group of Bi2O3, V2O5,PbO,B2O3, Lif and CaF2. HfMLCIs made from the composition of the present invention are capable of functioning in the frequency region of 300-800 MHz.

Abstract: The present invention relates to composite polymers containing nanometer-sized metal particles and manufacturing method thereof, which can be uniformly dispersed nanometer-sized metal particles into polymers, thereby allowing the use thereof as optically, electrically and magnetically functional materials. The method for manufacturing composite polymers containing nanometer-sized metal particles includes the steps of: dispersing at least one metal precursor into a matrix made of polymers in a molecule level; and irradiating rays of light on the matrix containing the metal precursors dispersed in the molecule level and reducing the metal precursors into metals and fixing nanometer sized metal particles inside of matrix.

Abstract: The present invention provides a conductive adhesive and a packaging structure that can keep moisture-proof reliability even when a multipurpose base metal electrode is used. A conductive adhesive according to the present invention includes first particles having a standard electrode potential that is equal to or higher than a standard electrode potential of silver, and second particles having a standard electrode potential lower than a standard electrode potential of silver. A metal compound coating having a potential higher than that of metal particles as the first particles can be formed on a surface of an electrode having a potential lower than that of the metal particles.

Abstract: The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder. The conductive powder is distributed in the powder with non-linear resistance interfaces to relatively reduce the total number of non-linear resistance interfaces between two electrodes and, as a result, decrease the breakdown voltage of the components.

Abstract: In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventing color change of the dielectric layer from being caused due to reaction with Ag electrodes in the plasma display panel. Ceramics powder can be mixed with the glass powder. The dielectric composition can also be provided in a form of paste, alternatively in a form of a green sheet.

Abstract: There is provided a varistor having high surge resisting capability in spite of its small size and a method of manufacturing the same. The varistor is mainly composed of zinc oxide and contains a composite oxide expressed by the chemical formula Zn2SnO4. It is manufactured using a method wherein zinc oxide and tin oxide are mixed; the mixture is subjected to a thermal process thereafter to obtain a composite oxide expressed by the chemical formula Zn2SnO4; and the composite oxide is combined with the zinc oxide which is the main component and a thermal process is performed to obtain a raw material for the varistor.

Abstract: The invention concerns novel varistors based on zinc oxide and a method for making same, which consists in using as base products nanocrystalline powders obtained by high-intensity mechanical grinding and in subjecting the mixture resulting from said nanocrystalline powders a consolidating treatment such as sintering, in suitably selected temperature and time conditions so as to retain the smallest possible grain size of ZnO. The resulting varistors have a very fine homogeneous microstructure and an average grain size characteristically not more than 3 mu m, i.e. five times smaller than standard materials. Said novel varistors have a larger number of grain boundaries per length unit and therefore a much higher breakdown voltage. Said voltage is characteristically higher than 10 kV/cm and can reach 17 kV/cm which is almost one order of magnitude above the breakdown voltage of standard varistors.

Abstract: A method of producing an electronic device including a dielectric layer includes a dielectric ceramic composition containing a main component expressed by a formula of {(Sr1−xCax)O}m.(Ti1−yZry)O2, wherein x fulfills 0≦x≦1.00 and y fulfills 0≦y≦0.20, and producing said dielectric ceramic composition by using a material expressed by a formula of {(Sr1−xCax)O}m′.(Ti1−yZry)O2 wherein the mole ratio m′ fulfills m′<m. It is possible to produce an electronic device, such as a chip capacitor, having excellent resistance to reducing during firing and excellent capacity-temperature characteristics after firing, wherein the insulation resistance is hard to be deteriorated particularly when made to be a thin layer and defect rate of the initial insulation resistance is low.

Abstract: A nonlinear resistance composition comprising: zinc oxide as a major component; bismuth oxide present at 0.1-5.0: mol % of said zinc oxide, titanium oxide present at 0.1-5.0: mol % of said zinc oxide, and silver oxide present at 0.5*10−3-20*10−3: mol % of said zinc oxide. Such nonlinear resistance components can further comprise antimony oxide, cobalt oxide, manganese oxide, nickel oxide, aluminum oxide and/or boric oxide.

Abstract: The method for producing a positive electrode active material for an alkaline storage battery is disclosed. The method includes a first oxidation treatment of a raw material powder comprising a nickel hydroxide solid solution and cobalt hydroxide to oxidize the cobalt hydroxide to a cobalt oxyhydroxide; and a second oxidation treatment of the powder obtained in the first oxidation treatment to oxidize the nickel hydroxide solid solution to a nickel oxyhydroxide solid solution.

Abstract: The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2O3, or a mixed sintered body of aY(Cr0.5Mn0.5)O3.b(Al2O3+Y2O3) made of Y(Cr0.5Mn0.5)O3, Al2O3 and Y2O3. The mole fractions a and b have the relationships 0.05≦a>1.0, 0<b≦0.95 and a+b=1. This is required to obtain a thermistor device that has stable characteristics and exhibits a small change in its resistance value, even in a heat history from room temperature to 1000° C. or the like, and also has a resistance value of 50&OHgr; to 100 k&OHgr; in the temperature range from room temperature to 1000° C.

Abstract: A thermistor composition that is in use within a range of room temperature to 400° C. has the general formula Mn2−a−b−cZnaNibFec+dCo1−dO4, wherein 0.1≦a<1, 0≦b<1, 0<c<1, 0≦d<1 and 0.1<a+b<1. A preferred thermistor composition has a B constant (B25/85) within a range of 3,300-4,960 K, a resistivity (&rgr;25) within a range of 400-88,000 &OHgr;·cm and a resistance variation rate (&Dgr;R25) of 2% or less. The composition is suitable for a thermistor or a thermistor device using the same.