Abstract: Provided are a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.

Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

Abstract: A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

Abstract: The current invention describes a process and texturing solution for texturing a crystalline silicon substrate to provide a light trapping surface within a crystalline silicon based solar cell. In an embodiment the texturing process includes a pre-treatment of hydrofluoric acid followed by the application of a texturing solution that includes potassium hydroxide (KOH) and butanol. The application of the texturing solution may be followed by a hydrofluoric acid post-treatment. A combinatorial method of optimizing the textured surface of a crystalline silicon substrate is also described.

Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract: In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

Abstract: Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 ?m/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate.

Abstract: The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: A slurry composition has an amount of 100% and includes abrasives, an acid-base pH adjustor, an oxidant and water. A content of the abrasives is 10 wt % to 40 wt %, and a polydisperse index of the abrasives sizes is greater than 1.8. A content of the acid-base pH adjustor is 0.01 wt % to 10 wt %. A content of the oxidant is 0.01 wt % to 10 wt %. A remaining portion of the slurry composition is water.

Abstract: Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan.

Abstract: A formate salt based heat transfer fluid having a pH containing a phosphate for a secondary refrigeration loop is disclosed. The formate based heat transfer fluid generally is a more effective heat transfer medium than a glycol based fluid designed to operate in the same temperature range. The formate based fluid also has lower toxicity and environmental risks than the glycol fluid.

Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Abstract: A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent.

Abstract: An aqueous solution of ammonia, tetramethylammonium hydroxide and sodium hydroxide, etc. has been used as a cleaning liquid and an etching liquid of a semiconductor substrate and a glass substrate. However, the metal impurities in the alkali components are adsorbed onto the substrate surface during treatment, so that a process for removing the adsorbed metal impurities is necessary as the next process. In addition, in the case of the cleaning liquid, though it is effective in the removal of fine particles, the metal impurities cannot be cleaned, so that it is necessary to carry out acid cleaning, which makes the process complicated. According to the present invention, the alkaline aqueous solution for treating a substrate wherein an alkali component and a specific chelating agent are combined prevents adsorption of metal impurities onto the substrate, and further cleans and removes the metals adhered to the substrate.

Abstract: A semiconductor polishing composition is provided that can, in at least one embodiment, efficiently polish a semiconductor device with high accuracy while preventing fumed silica from being agglomerated and without causing a polishing flaw in the semiconductor device. Fumed silica, of which a bulk density of powder before dispersed is 50 g/L or more and less than 100 g/L, is used as abrasive grains. This makes it possible to enhance a dispersion state of the fumed silica, and to realize reduction in transportation cost.

Abstract: A chelate complex is removed from a chemical which is used in a semiconductor production process and contains a compound having a chelating ability, and the cleaning load is also reduced. Specifically disclosed is a method for purifying a chemical which is used in a semiconductor production process and contains a compound having a chelating ability, wherein a chelate complex which is formed from impurity metals such as nickel and copper contained in an alkaline chemical is removed from the chemical by treating the alkaline chemical with an organic complex adsorbing material.

Abstract: The present invention relates to particle-containing etching media in the form of etching pastes which are suitable for the full-area or selective etching of extremely fine lines or structures in silicon surfaces and layers and in glass-like surfaces formed from suitable silicon compounds. The present invention also relates to the use of the pastes according to the invention in processes for etching surfaces of this type.

Abstract: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 ?·cm using the etching liquid.

Abstract: A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

Abstract: The present invention relates to a CMP slurry composition for polishing a copper film in a semiconductor device fabricating process. The CMP composition for polishing a substrate comprising copper comprises zeolite, an oxidizer and a complexing agent and a content of the complexing agent is 0.01˜0.8 weight % with respect to an entire weight of the polishing composition.

Abstract: The present invention provides a polishing composition which can remove a natural oxidized layer on a silicon wafer and can efficiently polish the silicon wafer. The polishing composition of the present invention comprises colloidal ceria and an alkaline polishing composition. The polishing composition of the present invention may further comprise a chelating agent. The present invention includes a polishing method comprising removing an oxidized layer with colloidal ceria; a polishing method comprising removing an oxidized layer with colloidal ceria and polishing a silicon wafer with an alkaline polishing composition; and a polishing method comprising polishing a silicon wafer with a polishing composition comprising colloidal ceria and an alkaline polishing composition. Further, the present invention relates to a polishing composition kit comprising colloidal ceria and an alkaline polishing composition.

Abstract: Disclosed is a slurry for polishing a phase change material. The slurry includes an abrasive, an alkaline polishing promoter and deionized water. Due to the use of the abrasive and the alkaline polishing promoter, the pH of the slurry is adjusted, the polishing rate of the phase change material is improved, and the polishing selectivity of the phase change material to an underlying insulating layer is increased. Further disclosed is a method for patterning a phase change material using the slurry.

Abstract: Disclosed are an etching solution for a substrate and a substrate-etching method, which can prevent the contamination of a substrate, particularly a semiconductor substrate, with metal impurities. The etching solution comprises a dicarboxylic acid represented by the general formula (1) or a salt thereof and 20% (W/W) or more of an alkali metal hydroxide. The substrate-etching method comprises the step of etching a substrate with said etching solution.

Abstract: An etchant composition contains (a) an alkaline compound mixture of an organic alkaline compound and inorganic alkaline compound and (b) a silicon-containing compound. The organic alkaline compound is composed of one or more ingredients from quaternary ammonium hydroxide and ethylenediamine. The inorganic alkaline compound is composed of one or more ingredients from sodium hydroxide, potassium hydroxide, ammonia and hydrazine. The silicon-containing inorganic compound is composed of one or more ingredients from metal silicon, fumed silica, colloidal silica, silica gel, silica sol, diatomaceous earth, acid clay and activated clay, and the silicon-containing organic compound is composed of one or more ingredients from quaternary ammonium salts of alkyl silicate and quaternary ammonium salts of alkyl silicic acid.

Abstract: Processes for effecting biocidal activity in subterranean oil and gas wells being drilled, completed, worked over or produced are described. In general the process comprises blending with aqueous well fluid a biocidally-effective amount of a sulfamate stabilized, bromine-based biocide. Compositions comprised of aqueous well fluid blended with such aqueous biocides are also described.

Abstract: The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.

Abstract: The present invention relates to a polishing composition for silicon wafer comprising silica, a basic compound, a polyaminopolycarboxylic acid compound having hydroxy group, and water. The polishing composition can prevent metal contamination by nickel, chromium, iron, copper or the like, particularly copper contamination in polishing of silicon wafer.

Abstract: A mirror etching composition comprising a solution of water, sulfated potash and vegetable glycerin and, when applied to the electroplated non-reflective surface of a mirror, effectively simulates the appearance of a tarnished or deteriorated “antique” mirror. The electroplated surface applied to the back of new mirrors is normally sealed with a painted protective coating. In order to etch the electroplated surface on new mirrors, the painted protective coating must be stripped with a paint or varnish remover to expose the electroplated surface. After this mirror etching composition is applied to the electroplated non-reflective surface and the desired effect has been achieved, the electroplated surface may be sealed with a painted protective coating. New mirrors that have been electroplated and not yet sealed with a painted protective coating may be treated with this mirror etching composition before sealing.

Abstract: A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

Abstract: A polishing composition of the present invention, which is used in precision polishing the surface of a wafer for semiconductor devices, remarkably reduces haze that occurs on the surface of the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The silicon dioxide is colloidal silica or fumed silica. The average primary particle diameter DSA of the colloidal silica is from 5 to 30 nm, and the average secondary particle diameter DN4 of the colloidal silica is from 5 to 120 nm. The average primary particle diameter DSA of the fumed silica is from 5 to 30 nm, and the average secondary particle diameter DN4 of the fumed silica is from 5 to 200 nm.

Abstract: A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.

Abstract: A selective polish for fabricating electronic devices is disclosed. The selective polish may include the use of a slurry that facilitates the selective polish of a first component but does not substantially polish a second component.

Abstract: As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is required. In addition, when a washing liquid is used, it cannot wash off metal impurities; therefore an acid washing process is required. The present invention provides an aqueous solution composition, which is an alkaline aqueous solution but is able to prevent adsorption of metal impurities, which also has cleaning capability. By means of an alkaline aqueous solution composition used for washing or etching a substrate, the composition comprising a chelating agent represented by the general formula (1): and an alkaline component, the adsorption of metal impurities on the substrate is prevented, and metal impurities adsorbed on the substrate are washed off.

Abstract: A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0.

Abstract: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include utilizing a cleaning mixture comprising a solvent such as ethylene glycol monopropyl ether, an inorganic base, an organic base, a copper corrosion inhibitor and a surfactant to clean at least one of a polymer residue, a organic sacrificial fill material and etched or un-etched photo resist from a Damascene structure of a microelectronic structure comprising a porous oxide dielectric.

Abstract: A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant adsorbed and/or precipitated onto a surface of the colloidal particles and/or substrate. The surfactant has a hydrophobic section that forms a steric hindrance barrier and substantially prevents contaminates, including colloidal particles, from bonding to the substrate surface. The slurry is applied to the surface of the substrate while a pad mechanically rubs the surface. Subsequent cleaning with standard soap solutions removes substantially all remaining contamination from the substrate surface. In an exemplary embodiment, the slurry is used to superfinish a glass disk substrate to a surface roughness of less than 2 ?, with substantially no surface contamination as seen by atomic force microscopy (AFM) after standard soap cleaning steps.

Abstract: A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY ??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

Abstract: Alkaline etching solutions capable of improving a surface roughness even with a relatively low alkaline concentration, contain bromate or both bromate and nitrate. An alkaline etching method using the solution produces silicon wafers with improved surface roughness.

Abstract: The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

Abstract: An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol.

Abstract: The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain an alkaline compound, one or more other acid compounds, and/or a fluoride-containing compound and may optionally contain additional components such as organic solvents, chelating agents, amines, and/or surfactants.

Abstract: Aqueous dispersion containing a silicon-aluminum mixed oxide powder, the powder containing 0.1 to 99.9 wt. % Al2O3 and Si—O—Al-bonds. The dispersion can be produced using dispersing and/or grinding devices which a achieve an energy input of at least 200 KJ/m3. The dispersion can be used for the chemical-mechanical polishing of semiconductor substrates.

Abstract: A method for maintaining a micro-roughness finish after etching chrome from a surface of a calcium fluoride (CaF2) object. Etching the chrome a first amount in a first chrome etchant. Etching the chrome a second amount beyond the first predetermined amount in second chrome etchant, such that the CaF2 object maintains a low micro-roughness.

Abstract: A process for providing a metal-seeded liquid crystal polymer comprising the steps of providing a liquid crystal polymer substrate to be treated by applying an aqueous solution comprising an alkali metal hydroxide and a solubilizer as an etchant composition for the liquid crystal polymer substrate. Further treatment of the etched liquid crystal polymer substrate involves depositing an adherent metal layer on the etched liquid crystal polymer substrate. An adherent metal layer may be deposited using either electroless metal plating or vacuum deposition of metal such as by sputtering. When using electroless metal plating, a tin(II) solution applied to the liquid crystal polymer provides a treated liquid crystal polymer substrate to which the application of a palladium(II) solution provides the metal-seeded liquid crystal polymer. The etchant composition comprises a solution in water of from 35 wt. % to 55 wt. % of an alkali metal salt, and from 10 wt. % to 35 wt.