Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

Abstract: A monolithic, three-dimensional (3D) integrated circuit (IC) device includes a sensing layer, a memory layer, and a processing layer. The sensing layer includes a plurality of carbon nanotube field-effect transistors (CNFETs) that are functionalized with at least 50 functional materials to generate data in response to exposure to a gas. The memory layer stores the data generated by the plurality of CNFETs, and the processing layer identifies one or more components of the gas based on the data generated by the plurality of CNFETs.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: A moisture sensor comprises a carrier element comprises an insulating material, a first and a second electrode structure at a distance from one another at the carrier element, a moisture-sensitive, dielectric layer element at a first main surface region of the carrier element and adjacent to the first and second electrode structures and a third electrode structure on a first main surface region of the moisture-sensitive, dielectric layer element, such that the moisture-sensitive, dielectric layer element is between the third electrode structure and the first electrode structure and between the third electrode structure and the second electrode structure. The first electrode structure is a first capacitor electrode and the second electrode structure is a second capacitor electrode of a measurement capacitor for capacitive moisture measurement, wherein the third electrode structure is a floating electrode structure.

Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Abstract: Aspects describe a nanotube array gas sensor, and methods to manufacture and use the same. In one example, the nanotube array gas sensor comprises an insulator template including an array of parallel aligned, open-ended nanotubes; a sensing material deposited on at least interior surfaces of the nanotubes; and catalyst nanoparticles distributed on the sensing material. An electronic controller activates electrodes made of different conductor materials in order to obtain multiple measurements of electrical resistance across the insulator template. The electrical resistance measurements can be compared to electrical resistance profiles in order to determine types and concentrations of gases in the nanotube array gas sensor.

Abstract: In a floating gate semiconductor nanostructure biosensor and a method for manufacturing the biosensor, the nanostructure biosensor includes a substrate, an insulating layer, a nanostructure, a source electrode and a drain electrode, a floating gate and a biological sensing material. The insulating layer is formed on the substrate. The nanostructure is protruded from the insulating layer. The source electrode and the drain electrode are formed on the insulating layer and dispose the nanostructure therebetween. The floating gate has a metal pattern or a polysilicon pattern, and extends with contacting the nanostructure. The biological sensing material has a first end combined with an immobile molecule on the floating gate, and a second end combined with a bio molecule.

Abstract: In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Abstract: A sensor including a surface plasmon resonance detector with a reservoir for containing a liquid sample. The sensor further includes a sensing metallic film positioned within the reservoir so that at least a majority of a surface of the sensing metallic film is to be in contact with the liquid sample being housed within the reservoir. The sensory also includes a semiconductor device having a contact in electrical communication with the sensing metal containing film that is positioned within the reservoir. The semiconductor device measures the net charges of molecules within the liquid sample within a Debye length from the sensing metallic film.

Abstract: An organic light emitting diode (OLED) device and the method of manufacturing thereof. The OLED device comprising a substrate, a display region, a non-display region, and an encapsulation structure; wherein the encapsulation structure comprises: at least one ring of barrier wall on the non-display region; an encapsulating film laminate covering the display region and the non-display region, the encapsulating film laminate comprising an organic film; an organic thin film detecting device surrounding the barrier wall, after detecting that the organic film overflows the barrier wall, the organic thin film detecting device emits an electrical signal indicating overflow.

Abstract: A storage device of an embodiment includes a first conductive layer; a second conductive layer; a fluid layer between the first conductive layer and the second conductive layer; particles in the fluid layer; a first control electrode between the first conductive layer and the second conductive layer; a first insulating layer between the first conductive layer and the first control electrode surrounding the fluid layer; and a second insulating layer between the first control electrode and the second conductive layer surrounding the fluid layer. In this storage device, a first cross-sectional area of the fluid layer in a first cross-section perpendicular to a first direction is smaller than a second cross-sectional area of the fluid layer in a second cross-section perpendicular to the first direction. The first cross-section includes the first control electrode, and the second cross-section includes the second insulating layer.

Abstract: Example devices include a cis well associated with a cis electrode, a trans well associated with a trans electrode, and a field effect transistor (FET) positioned between the cis well and the trans well. Examples of the field effect transistor (FET) include a fluidic system defined therein. The fluidic system includes a first cavity facing the cis well, a second cavity fluidically connected to the trans well, and a through via extending through the field effect transistor from the first cavity. A first nanoscale opening fluidically connects the cis well and the first cavity, the first nanoscale opening having an inner diameter. A second nanoscale opening fluidically connects the through via and the second cavity, the second nanoscale opening having an inner diameter. The second nanoscale opening inner diameter is larger than the first nanoscale opening inner diameter.

Abstract: A device for monitoring a cell culture includes one or more electrochemical sensors configured to be positioned adjacent to or embedded within a medium of a cell culture. The one or more electrochemical sensors are configured to generate signals in accordance with the cell culture. A data storage device is configured to receive and store the signals from the one or more electrochemical sensors. A computation device is configured to analyze the signals from the one or more electrochemical sensors to determine cell activity over time using sensitivity information.

Abstract: A sensing unit includes a plurality of first sensing electrodes of a first group disposed in a sensing area in a first direction, and a first sensing line electrically connected to one of the first sensing electrodes of the first group. The first sensing line is disposed in the sensing area and extends in a second direction intersecting the first direction.

Abstract: A sensor device includes a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions respectively. The source regions and drain regions are at least partially disposed within the substrate. The second gate structure includes first and second gate elements, and a resistance region configured to provide a resistance to a second current flow through the second channel region. In use, the first gate structure may receive a solution, and a change in pH in the solution changes a first current flow through the first channel region. In turn, the second current flow through the second channel region changes to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

Abstract: The present development is a metal particle coated nanowire catalyst for use in the hydrodesulfurization of fuels and a process for the production of the catalyst. The catalyst comprises titanium(IV) oxide nanowires wherein the nanowires are produced by exposure of a TiO2—KOH paste to microwave radiation. Metal particles selected from the group consisting of molybdenum, nickel, cobalt, tungsten, or a combination thereof, are impregnated on the metal oxide nanowire surface. The metal impregnated nanowires are sulfided to produce catalytically-active metal particles on the surface of the nanowires The catalysts of the present invention are intended for use in the removal of thiophenic sulfur from liquid fuels through a hydrodesulfurization (HDS) process in a fixed bed reactor. The presence of nanowires improves the HDS activity and reduces the sintering effect, therefore, the sulfur removal efficiency increases.

Abstract: The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

Abstract: A sensing element comprises a transistor having a gate electrode, a source electrode, a gate electrode and a semiconductor nanostructure connecting between the source and the gate electrodes. The semiconductor nanostructure is modified by a functional moiety covalently attached thereto. A voltage source is connected to the gate electrode. A controller controls a gate voltage applied by the voltage source to the gate electrode such as to reverse a redox reaction occurring when the moiety contacts a redox reactive agent.

Abstract: A sensor includes a substrate and a nanotube structure formed on top of the substrate. A body is formed on top of the substrate and surrounds the nanotube structure. A source contact is electrically coupled to a top portion of the nanotube structure. A drain contact is arranged on top of the substrate and is electrically coupled with a bottom portion of the nanotube structure. A gate contact is arranged on top of the nanotube structure. The gate contact is electrically is isolated from the top portion of the nanotube structure and electrically coupled with a middle portion of the nanotube structure. The top portion of the nanotube structure is exposed to an environment surrounding the sensor.

Abstract: A lighting apparatus comprising a lighting part that includes a light emitting area having a plurality of first light emitting areas that are separated apart from each other and a plurality of second light emitting areas separated apart from each other and a non-light emitting area including a first non-light emitting area surrounding the plurality of first light emitting areas and the plurality of second light emitting areas and a plurality of second non-light emitting areas extending from the first non-light emitting area, the lighting apparatus comprises a substrate; a plurality of first electrodes disposed on the substrate in the light emitting area; an organic layer disposed on the plurality of first electrodes; a second electrode disposed on the organic layer; and an encapsulation part disposed on the second electrode; wherein the plurality of first light emitting areas are arranged in a first direction, and the plurality of second light emitting areas are arranged in a second direction intersecting wit

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

Abstract: The present invention relates generally to catalysts and methods for use in olefin production. More particularly, the present invention relates to novel amorphously supported single-center, Lewis acid metal ions and use of the same as catalysts.

Abstract: A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).

Abstract: A method to form a 3D semiconductor device, the method including: providing a first level including first circuits, the first circuits including first transistors and first interconnection; preparing a second level including a silicon layer; forming second circuits over the second level, the second circuits including second transistors and second interconnection; transferring with bonding the second level on top of the first level; and then thinning the second level to a thickness of less than ten microns, where the bonding includes oxide to oxide bonds, and where the bonding includes metal to metal bonds.

Abstract: In-vivo systems and methods for the detection of early signs of post-surgery infection are described. The in-vivo systems include a drain system with a tube configured to drain fluids from a surgery site, at least one sensor unit for sensing the presence of at least one infection biomarker, a processor for processing a signal generated by the at least one sensor unit, a transmitter for transmitting the signal, and a notification system for receiving the signal, analyzing the signal by comparing it to a threshold, determining presence of infection, and generating an indication on the presence of infection.

Abstract: The present disclosure generally relates to semiconductor devices, and more particularly to semiconductor devices integrated with an ion-sensitive field-effect transistor (ISFET) and methods of forming the same. The semiconductor device may include a substrate, a reference gate structure disposed above the substrate, a floating gate structure disposed above the substrate and adjacent to the reference gate structure, where the reference gate structure is electrically coupled to the floating gate structure, and a dielectric layer disposed between the reference gate structure and the floating gate structure.

Abstract: Aspects of the invention are directed to chemical and biological molecule sensing devices, methods of fabricating the chemical sensor devices, and methods of using those devices to detect chemical and biological molecules. The chemical sensor device may comprise a chemically-sensitive vertical slit field effect transistor (VeSFET) with a chemical recognition element attached to a gate structure and/or a channel of the VeSFET. The recognition element may be capable of binding to a chemical of interest such that the binding of the chemical to the recognition element results in a modification of current flow of the VeSFET, resulting in a detectable signal. The chemical sensor device may further comprise an amplifier configured to receive the detectable signal and produce an amplified signal, and an analog-to-digital converter (ADC) configured to receive the amplified signal and to produce a digital signal that represents the amplified signal.

Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.

Abstract: Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold.

Abstract: A biosensor includes a bulk silicon substrate and a vertical bipolar junction transistor (BJT) formed on at least a portion of the substrate. The BJT includes an emitter region, a collector region and an epitaxially grown intrinsic base region between the emitter and collector regions. The biosensor further includes a sensing structure formed on at least a portion of two vertical surfaces of the intrinsic base region of the BJT. The sensing structure includes a channel/trench opening, exposing the intrinsic base region on at least first and second opposing sides thereof, and at least one dielectric layer formed in the channel/trench opening and contacting at least a portion of the intrinsic base region, the dielectric layer being configured to respond to charges in biological molecules.

Abstract: Structures for a sensor and fabrication methods for a sensor. Features each having a top surface and a plurality of side surfaces are formed. A sensing layer is formed on the top surface and the side surfaces of each feature, and an interconnect structure having one or more interlayer dielectric layers is formed over the features. The one or more interlayer dielectric layers include a cavity arranged to expose the sensing layer, and the sensing layer is composed of a material that is sensitive to a property of an analyte solution provided in the cavity.

Abstract: Apparatus and methods relating to DNA sequencing are provided. In one embodiment, a DNA sequencing device includes a nanochannel having a width that is approximately 0.3 nm to approximately 20 nm. A pair of electrodes having portions exposed to the nanochannel may form a tunneling current electrode (TCE) with an electrode gap of approximately 0.1 nm to approximately 2 nm, and more particularly about 0.3 nm to about 1 nm. In one embodiment, at least one of the pair of electrodes is formed as a suspended electrode. An actuator may be associated with the suspended electrode to displace it relative to the other electrode. In various embodiments, the nanochannel and/or the electrodes may be formed using thermal reflow processes to reduce the size of such features.

Abstract: A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A method of blowing an antifuse element is disclosed. An antifuse element including a first conductor, a second conductor, and a dielectric layer disposed between the first conductor and the second conductor is received, wherein the dielectric layer has a breakdown voltage. A first voltage is applied between the first conductor and the second conductor within a first time period, wherein the first voltage is less than the breakdown voltage. After applying the first voltage, a second voltage is applied between the first conductor and the second conductor to blow the antifuse element within a second time period, wherein the second voltage is greater than the breakdown voltage.

Abstract: Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below, wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air.

Abstract: Systems, methods, and other embodiments associated with gas detecting sensors. According to one embodiment, a gas sensor includes a metal layer, a barrier interlayer, a substrate layer, a first insulating layer, a conduction path, a contact pad, and a second insulating layer. The conduction path connects the metal layer to the contact pad. The second insulating layer prevents diffusion through the contact pad, the conduction path, or the metal layer. The sensor includes a wire bonded electrical connection to the contact pad such that voltage can be determined and/or applied.

Abstract: A microfluidic chip suitable for detecting a microdroplet includes a first component, a second component, a channel layer, and a semiconductor chip. The first component includes a first substrate, a first electrode layer, and a first dielectric layer, wherein the first electrode layer is located between the first substrate and the first dielectric layer. The second component is disposed opposite to the first component and includes a second substrate, a second electrode layer, and a second dielectric layer. The channel layer is located between the first component and the second component. The semiconductor chip is disposed at one side of the first substrate and is exposed to the channel layer to assist in treating or detecting a sample or microdroplet. The microdroplet in the sample entering the channel layer is reacted with the semiconductor chip, and thus the sample is detected.

Abstract: An electrical detector is provided that comprises a nanofluidic channel with an integrated nanoscale charge sensor. The charge sensor can be an unfunctionalized nanowire, nanotube, transistor or capacitor and can be of carbon, silicon, carbon/silicon or other semiconducting material. The nanofluidic channel depth is on the order of the Debye screening length. Methods are also provided for detecting charged molecules or biological or chemical species with the electrical detector. Charged molecules or species in solution are driven through the nanofluidic channel of the electrical detector and contact the charge sensor, thereby producing a detectable signal. Methods are also provided for detecting a local solution potential of interest. A solution flowing through the nanofluidic channel of the electrical detector contacts the charge sensor, thereby producing a detectable local solution potential signal.

Abstract: A method for forming a hybrid complementary metal oxide semiconductor (CMOS) device includes orienting a semiconductor layer of a semiconductor-on-insulator (SOI) substrate with a base substrate of the SOI, exposing the base substrate in an N-well region by etching through a mask layer, a dielectric layer, the semiconductor layer and a buried dielectric to form a trench and forming spacers on sidewalls of the trench. The base substrate is epitaxially grown from a bottom of the trench to form an extended region. A fin material is epitaxially grown from the extended region within the trench. The mask layer and the dielectric layer are restored over the trench. P-type field-effect transistor (PFET) fins are etched on the base substrate, and N-type field-effect transistor (NFET) fins are etched in the semiconductor layer.

Abstract: Embodiments provide analyte detection methods, techniques and processes for detecting the presence of one or more analytes in one or more samples. In a detection method, a sample and a sensor compound is introduced into a channel. A first potential difference is applied across the length of the channel in a first direction, and a first electrical property value is detected. Subsequently, a second potential difference is applied across the length of the channel in a second opposite direction, and a second electrical property value is detected. Presence or absence of an analyte in the channel is determined based on a comparison between the first and second electrical property values.

Abstract: A sensor includes a semiconductor substrate having first pointed nodes extending into a channel from a first side of the channel. Second pointed nodes extend into the channel from a second side of the channel, which is opposite the first side. The second pointed nodes being self-aligned to the first pointed nodes on the opposite side of the channel. The first pointed nodes and the second pointed nodes are connected to a circuit to detect particles in the channel.

Abstract: The present development is a metal particle coated nanowire catalyst for use in the hydrodesulfurization of fuels and a process for the production of the catalyst. The catalyst comprises titanium(IV) oxide nanowires wherein the nanowires are produced by exposure of a TiO2—KOH paste to microwave radiation. Metal particles selected from the group consisting of molybdenum, nickel, cobalt, tungsten, or a combination thereof, are impregnated on the metal oxide nanowire surface. The metal impregnated nanowires are sulfided to produce catalytically-active metal particles on the surface of the nanowires The catalysts of the present invention are intended for use in the removal of thiophenic sulfur from liquid fuels through a hydrodesulfurization (HDS) process in a fixed bed reactor. The presence of nanowires improves the HDS activity and reduces the sintering effect, therefore, the sulfur removal efficiency increases.

Abstract: The present disclosure is directed to a gas sensor that includes an active sensor area that is exposed to an environment for detection of elements. The gas sensor may be an air quality sensor that can be fixed in position or carried by a user. The gas sensor includes a heater formed above chamber. The gas sensor includes an active sensor layer above the heater that forms the active sensor area. The gas sensor can include a passive conductive layer, such as a hotplate that further conducts and distributes heat from the heater to the active sensor area. The heater can include a plurality of extensions. The heater can also include a first conductive layer and a second conductive layer on the first conductive layer where the second conductive layer includes a plurality of openings to increase an amount of heat and to more evenly distribute heat from the heater to the active sensor area.

Abstract: Apparatus and methods are disclosed for single molecule field effect sensors having conductive channels functionalized with a single active moiety. A region of a nanostructure (e.g., such as a silicon nanowire or a carbon nanotube) provide the conductive channel. Trapped state density of the nanostructure is modified for a portion of the nanostructure in proximity with a location where the active moiety is linked to the nanostructure. In one example, the semiconductor device includes a source, a drain, a channel including a nanostructure having a modified portion with an increased trap state density, the modified portion being further functionalized with an active moiety. A gate terminal is in electrical communication with the nanostructure. As a varying electrical signal is applied to an ionic solution in contact with the nanostructure channel, changes in current observed from the semiconductor device can be used to identify composition of the analyte.

Abstract: Devices, systems and methods for monitoring excitable cells, such as cardiomyocytes, on microelectrode arrays that couple the electro-stimulation of excitable cells to induce or regulate cardiomyocyte beating and the simultaneous measurement of impedance and extracellular recording to assess changes in cardiomyocyte beating, viability, morphology or electrophysical properties in response to a plurality of treatments.

Abstract: The present disclosure relates to systems and circuits that may facilitate sub-5 nanosecond laser diode operation. An example system includes a trigger source, a laser diode, a first field effect transistor and a second field effect transistor. The laser diode is coupled to a supply voltage and a drain terminal of the first field effect transistor. A source terminal of the first field effect transistor is coupled to ground and a gate terminal of the first field effect transistor is coupled to the trigger source. A drain terminal of the second field effect transistor is coupled to the supply voltage. A source terminal of the second field effect transistor and a gate terminal of the second field effect transistor are coupled to ground. In an example embodiment, the first field effect transistor and the second field effect transistor comprise gallium nitride (GaN).

Abstract: The system of the present invention includes a conductive element, an electronic component, and a partial power source in the form of dissimilar materials. Upon contact with a conducting fluid, a voltage potential is created and the power source is completed, which activates the system. The electronic component controls the conductance between the dissimilar materials to produce a unique current signature. The system can also measure the conditions of the environment surrounding the system.

Abstract: To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET M2 for amplifying an output from the ISFET, and a second MOSFET M3 which selectively transmits an output from the first MOSFET to a corresponding readout wire R1. Each of the plurality of cells is provided with a third MOSFET M1 which generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled.