Chemical (e.g., Isfet, Chemfet) Patents (Class 257/253)
  • Patent number: 11953461
    Abstract: An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: April 9, 2024
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Ukyo Ikeda, Tetsuyoshi Ono, Hiroki Nakatsuchi, Masafumi Miyake
  • Patent number: 11929405
    Abstract: In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode, a passivation layer arranged on the first major surface and a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer. The field plate is laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Albert Birner, Helmut Brech, John Twynam
  • Patent number: 11913938
    Abstract: Disclosed are methods for assessing the risk that a male subject is affected by prostate cancer and to methods for assessing the risk that such cancer is aggressive, by analysing the gaseous headspace of urine samples with at least three metal oxide semiconductor-based gas sensors, wherein the metal oxide of the first gas sensor is pure or doped SnO2, the metal oxide of the second sensor is pure or doped ZnO and the metal oxides of the third sensor are pure or doped SnO2, pure or doped TiO2 and pure or doped Nb2O5.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: February 27, 2024
    Assignees: HUMANITAS MIRASOLE S.P.A., POLITECNICO DI MILANO
    Inventors: Gianluigi Taverna, Fabio Grizzi, Laura Maria Teresa Capelli, Carmen Bax, Selena Sironi, Lidia Giuseppina Eusebio
  • Patent number: 11899001
    Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: February 13, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Prashanth Makaram, Ulrich Krumbein
  • Patent number: 11898983
    Abstract: Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: February 13, 2024
    Assignee: Illumina, Inc.
    Inventors: Boyan Boyanov, Rico Otto, Jeffrey G. Mandell
  • Patent number: 11761936
    Abstract: Novel integrated circuit environmental and temperature sensors in combination with measurement circuitry fully integrated as part of an ASIC die, which may be co-packaged with a pressure sensor integrated circuit to create a compact yet sensitive environment monitoring product. Embodiments may include one or more integrated local heating elements and control circuitry that are power supply independent, make efficient use of battery power, include an accurate in-built temperature detection capability, and provide digital close-loop control of the heating elements.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: September 19, 2023
    Assignee: pSemi Corporation
    Inventors: Vivek Saraf, Vishnu Srinivasan
  • Patent number: 11754610
    Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: September 12, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Jun Ogi, Yuri Kato, Naohiko Kimizuka, Yoshihisa Matoba, Kan Shimizu
  • Patent number: 11735645
    Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.
    Type: Grant
    Filed: November 16, 2020
    Date of Patent: August 22, 2023
    Assignees: Imec VZW, Katholieke Universiteit Leuven, KU LEUVEN R&D
    Inventors: Koen Martens, Sybren Santermans, Geert Hellings, David Barge
  • Patent number: 11676972
    Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: June 13, 2023
    Assignee: Japan Display Inc.
    Inventors: Yoshitaka Ozeki, Satoshi Tokura
  • Patent number: 11677337
    Abstract: A comb drive for MEMS device includes a stator and a rotor displaceable relative to the stator in a first direction. The stator includes stator comb fingers and the rotor includes rotor comb fingers. The stator comb fingers are coupled to two high impedance nodes to form high impedance node domains arranged in the first direction. The rotor comb fingers are coupled to two oppositely biased electrodes to form oppositely biased domains. Pairs of capacitors with opposite acoustic polarity are respectively formed between the high impedance node domains and the oppositely biased domains. The comb drive of the present invention has increased electrostatic sensitivity for a given unit cell cross-sectional area whilst maintaining an acceptable capacitance and linearity of voltage signal vs displacement. Extra force shim unit cells may be used, which allows for the stiffness between the rotor and stator to be controlled and reduced to zero for a particular displacement range, without impacting sensitivity.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: June 13, 2023
    Assignee: AAC Acoustic Technologies (Shenzhen) Co., Ltd.
    Inventors: Anup Patel, Yannick Pierre Kervran, Euan James Boyd
  • Patent number: 11662331
    Abstract: A nanobio-sensing device includes: a substrate; a source electrode and a drain electrode which are disposed on the substrate and spaced apart from each other; a sensing film which serves as a channel connecting the source electrode and the drain electrode and is in contact with at least a part of the source electrode and the drain electrode; a first gate electrode which is a floating gate, extends while one end of the first gate electrode is in contact with a part of the sensing film, and is capable of being in contact with a part of the source electrode and/or the drain electrode; and a second gate electrode which is in contact with the other end of the first gate electrode to form a first gate stacked structure.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: May 30, 2023
    Inventor: Hyun Hwa Kwon
  • Patent number: 11631824
    Abstract: A memristive device includes a biomaterial comprising protein nanowires and at least two electrodes in operative arrangement with the biomaterial such that an applied voltage induces conductance switching. An artificial neuron or an artificial synapse includes a memrisitive device with the electrodes configured to apply a pulsed voltage configured to mimic an action-potential input.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: April 18, 2023
    Assignee: University of Massachusetts
    Inventors: Jun Yao, Derek R. Lovley, Tianda Fu
  • Patent number: 11621366
    Abstract: A passivation process includes the successive steps of a) providing a stack having, in succession, a substrate based on crystalline silicon, a layer of silicon oxide, and at least one layer of transparent conductive oxide; and b) applying a hydrogen-containing plasma to the stack, step b) being executed at a suitable temperature so that hydrogen atoms of the hydrogen-containing plasma diffuse to the interface between the substrate and the layer of silicon oxide.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: April 4, 2023
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Raphael Cabal, Bernadette Grange
  • Patent number: 11585773
    Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: February 21, 2023
    Assignees: TODOS TECHNOLOGIES LTD., TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTD
    Inventor: Yael Nemirovsky
  • Patent number: 11588095
    Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: February 21, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
  • Patent number: 11561195
    Abstract: A monolithic, three-dimensional (3D) integrated circuit (IC) device includes a sensing layer, a memory layer, and a processing layer. The sensing layer includes a plurality of carbon nanotube field-effect transistors (CNFETs) that are functionalized with at least 50 functional materials to generate data in response to exposure to a gas. The memory layer stores the data generated by the plurality of CNFETs, and the processing layer identifies one or more components of the gas based on the data generated by the plurality of CNFETs.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: January 24, 2023
    Assignee: Massachusetts Institute of Technology
    Inventors: Max Shulaker, Mindy Deanna Bishop
  • Patent number: 11486848
    Abstract: A moisture sensor comprises a carrier element comprises an insulating material, a first and a second electrode structure at a distance from one another at the carrier element, a moisture-sensitive, dielectric layer element at a first main surface region of the carrier element and adjacent to the first and second electrode structures and a third electrode structure on a first main surface region of the moisture-sensitive, dielectric layer element, such that the moisture-sensitive, dielectric layer element is between the third electrode structure and the first electrode structure and between the third electrode structure and the second electrode structure. The first electrode structure is a first capacitor electrode and the second electrode structure is a second capacitor electrode of a measurement capacitor for capacitive moisture measurement, wherein the third electrode structure is a floating electrode structure.
    Type: Grant
    Filed: August 14, 2019
    Date of Patent: November 1, 2022
    Assignee: Infineon Technologies AG
    Inventors: Andrey Kravchenko, Heiko Froehlich, Magali Glemet, Vladislav Komenko
  • Patent number: 11486854
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • Patent number: 11467115
    Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: October 11, 2022
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Ignaz Eisele, Karl Neumeier, Martin Heigl, Daniel Reiser
  • Patent number: 11467109
    Abstract: Aspects describe a nanotube array gas sensor, and methods to manufacture and use the same. In one example, the nanotube array gas sensor comprises an insulator template including an array of parallel aligned, open-ended nanotubes; a sensing material deposited on at least interior surfaces of the nanotubes; and catalyst nanoparticles distributed on the sensing material. An electronic controller activates electrodes made of different conductor materials in order to obtain multiple measurements of electrical resistance across the insulator template. The electrical resistance measurements can be compared to electrical resistance profiles in order to determine types and concentrations of gases in the nanotube array gas sensor.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: October 11, 2022
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Zhiyong Fan, Jiaqi Chen
  • Patent number: 11460433
    Abstract: In a floating gate semiconductor nanostructure biosensor and a method for manufacturing the biosensor, the nanostructure biosensor includes a substrate, an insulating layer, a nanostructure, a source electrode and a drain electrode, a floating gate and a biological sensing material. The insulating layer is formed on the substrate. The nanostructure is protruded from the insulating layer. The source electrode and the drain electrode are formed on the insulating layer and dispose the nanostructure therebetween. The floating gate has a metal pattern or a polysilicon pattern, and extends with contacting the nanostructure. The biological sensing material has a first end combined with an immobile molecule on the floating gate, and a second end combined with a bio molecule.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: October 4, 2022
    Assignee: OSONG MEDICAL INNOVATION FOUNDATION
    Inventors: Sung-Keun Yoo, Seung-Wan Seo, Jeong-A Kim, Dong-Jun Moon
  • Patent number: 11428661
    Abstract: In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: August 30, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Marco Haubold, Heiko Froehlich, Thoralf Kautzsch, Olga Khvostikova, Marten Oldsen, Bernhard Straub
  • Patent number: 11422139
    Abstract: A sensor including a surface plasmon resonance detector with a reservoir for containing a liquid sample. The sensor further includes a sensing metallic film positioned within the reservoir so that at least a majority of a surface of the sensing metallic film is to be in contact with the liquid sample being housed within the reservoir. The sensory also includes a semiconductor device having a contact in electrical communication with the sensing metal containing film that is positioned within the reservoir. The semiconductor device measures the net charges of molecules within the liquid sample within a Debye length from the sensing metallic film.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: August 23, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bobby E. Feller, Jianqiang Lin, Robert D. Miller, Ramachandran Muralidhar, Tak H. Ning, Sufi Zafar
  • Patent number: 11404664
    Abstract: An organic light emitting diode (OLED) device and the method of manufacturing thereof. The OLED device comprising a substrate, a display region, a non-display region, and an encapsulation structure; wherein the encapsulation structure comprises: at least one ring of barrier wall on the non-display region; an encapsulating film laminate covering the display region and the non-display region, the encapsulating film laminate comprising an organic film; an organic thin film detecting device surrounding the barrier wall, after detecting that the organic film overflows the barrier wall, the organic thin film detecting device emits an electrical signal indicating overflow.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: August 2, 2022
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Jun Cao
  • Patent number: 11398487
    Abstract: A storage device of an embodiment includes a first conductive layer; a second conductive layer; a fluid layer between the first conductive layer and the second conductive layer; particles in the fluid layer; a first control electrode between the first conductive layer and the second conductive layer; a first insulating layer between the first conductive layer and the first control electrode surrounding the fluid layer; and a second insulating layer between the first control electrode and the second conductive layer surrounding the fluid layer. In this storage device, a first cross-sectional area of the fluid layer in a first cross-section perpendicular to a first direction is smaller than a second cross-sectional area of the fluid layer in a second cross-section perpendicular to the first direction. The first cross-section includes the first control electrode, and the second cross-section includes the second insulating layer.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: July 26, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Daisuke Matsubayashi, Masumi Saitoh
  • Patent number: 11391693
    Abstract: Example devices include a cis well associated with a cis electrode, a trans well associated with a trans electrode, and a field effect transistor (FET) positioned between the cis well and the trans well. Examples of the field effect transistor (FET) include a fluidic system defined therein. The fluidic system includes a first cavity facing the cis well, a second cavity fluidically connected to the trans well, and a through via extending through the field effect transistor from the first cavity. A first nanoscale opening fluidically connects the cis well and the first cavity, the first nanoscale opening having an inner diameter. A second nanoscale opening fluidically connects the through via and the second cavity, the second nanoscale opening having an inner diameter. The second nanoscale opening inner diameter is larger than the first nanoscale opening inner diameter.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: July 19, 2022
    Assignee: Illumina, Inc.
    Inventors: Boyan Boyanov, Jens Gundlach
  • Patent number: 11385751
    Abstract: A sensing unit includes a plurality of first sensing electrodes of a first group disposed in a sensing area in a first direction, and a first sensing line electrically connected to one of the first sensing electrodes of the first group. The first sensing line is disposed in the sensing area and extends in a second direction intersecting the first direction.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: July 12, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki Ho Bang, Yong Hwan Park, Chi Wook An, Seong Jun Lee
  • Patent number: 11384330
    Abstract: A device for monitoring a cell culture includes one or more electrochemical sensors configured to be positioned adjacent to or embedded within a medium of a cell culture. The one or more electrochemical sensors are configured to generate signals in accordance with the cell culture. A data storage device is configured to receive and store the signals from the one or more electrochemical sensors. A computation device is configured to analyze the signals from the one or more electrochemical sensors to determine cell activity over time using sensitivity information.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: July 12, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Amos Cahan, Guy M. Cohen, Theodore G. van Kessel, Sufi Zafar
  • Patent number: 11327045
    Abstract: A sensor device includes a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions respectively. The source regions and drain regions are at least partially disposed within the substrate. The second gate structure includes first and second gate elements, and a resistance region configured to provide a resistance to a second current flow through the second channel region. In use, the first gate structure may receive a solution, and a change in pH in the solution changes a first current flow through the first channel region. In turn, the second current flow through the second channel region changes to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: May 10, 2022
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Lanxiang Wang, Ping Zheng, Shyue Seng Tan, Eng Huat Toh
  • Patent number: 11320395
    Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.
    Type: Grant
    Filed: June 14, 2020
    Date of Patent: May 3, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Jui-Cheng Huang, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Fu-Chun Huang
  • Patent number: 11306261
    Abstract: The present development is a metal particle coated nanowire catalyst for use in the hydrodesulfurization of fuels and a process for the production of the catalyst. The catalyst comprises titanium(IV) oxide nanowires wherein the nanowires are produced by exposure of a TiO2—KOH paste to microwave radiation. Metal particles selected from the group consisting of molybdenum, nickel, cobalt, tungsten, or a combination thereof, are impregnated on the metal oxide nanowire surface. The metal impregnated nanowires are sulfided to produce catalytically-active metal particles on the surface of the nanowires The catalysts of the present invention are intended for use in the removal of thiophenic sulfur from liquid fuels through a hydrodesulfurization (HDS) process in a fixed bed reactor. The presence of nanowires improves the HDS activity and reduces the sintering effect, therefore, the sulfur removal efficiency increases.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: April 19, 2022
    Inventors: Mahendra K. Sunkara, Sivakumar Vasireddy, Juan He, Vivekanand Kumar
  • Patent number: 11275078
    Abstract: A sensing element comprises a transistor having a gate electrode, a source electrode, a gate electrode and a semiconductor nanostructure connecting between the source and the gate electrodes. The semiconductor nanostructure is modified by a functional moiety covalently attached thereto. A voltage source is connected to the gate electrode. A controller controls a gate voltage applied by the voltage source to the gate electrode such as to reverse a redox reaction occurring when the moiety contacts a redox reactive agent.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: March 15, 2022
    Assignee: Ramot at Tel-Aviv University Ltd.
    Inventors: Fernando Patolsky, Vadim Krivitsky, Marina Zverzhinetsky
  • Patent number: 11276619
    Abstract: The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: March 15, 2022
    Assignee: AMS INTERNATIONAL AG
    Inventors: Jens Hofrichter, Guy Meynants, Josef Pertl, Thomas Troxler
  • Patent number: 11243185
    Abstract: A sensor includes a substrate and a nanotube structure formed on top of the substrate. A body is formed on top of the substrate and surrounds the nanotube structure. A source contact is electrically coupled to a top portion of the nanotube structure. A drain contact is arranged on top of the substrate and is electrically coupled with a bottom portion of the nanotube structure. A gate contact is arranged on top of the nanotube structure. The gate contact is electrically is isolated from the top portion of the nanotube structure and electrically coupled with a middle portion of the nanotube structure. The top portion of the nanotube structure is exposed to an environment surrounding the sensor.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: February 8, 2022
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventor: Muhammad Mustafa Hussain
  • Patent number: 11239281
    Abstract: A lighting apparatus comprising a lighting part that includes a light emitting area having a plurality of first light emitting areas that are separated apart from each other and a plurality of second light emitting areas separated apart from each other and a non-light emitting area including a first non-light emitting area surrounding the plurality of first light emitting areas and the plurality of second light emitting areas and a plurality of second non-light emitting areas extending from the first non-light emitting area, the lighting apparatus comprises a substrate; a plurality of first electrodes disposed on the substrate in the light emitting area; an organic layer disposed on the plurality of first electrodes; a second electrode disposed on the organic layer; and an encapsulation part disposed on the second electrode; wherein the plurality of first light emitting areas are arranged in a first direction, and the plurality of second light emitting areas are arranged in a second direction intersecting wit
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: February 1, 2022
    Assignee: LG DISPLAY CO., LTD
    Inventor: JoonWon Park
  • Patent number: 11231388
    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: January 25, 2022
    Assignee: Life Technologies Corporation
    Inventors: James Li, Jordan Owens, James Bustillo
  • Patent number: 11141714
    Abstract: The present invention relates generally to catalysts and methods for use in olefin production. More particularly, the present invention relates to novel amorphously supported single-center, Lewis acid metal ions and use of the same as catalysts.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: October 12, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Adam S. Hock, Neil M. Schweitzer, Jeffrey T. Miller, Bo Hu
  • Patent number: 11127851
    Abstract: A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: September 21, 2021
    Assignee: ROHM CO., LTD.
    Inventor: Yuki Nakano
  • Patent number: 11063024
    Abstract: A method to form a 3D semiconductor device, the method including: providing a first level including first circuits, the first circuits including first transistors and first interconnection; preparing a second level including a silicon layer; forming second circuits over the second level, the second circuits including second transistors and second interconnection; transferring with bonding the second level on top of the first level; and then thinning the second level to a thickness of less than ten microns, where the bonding includes oxide to oxide bonds, and where the bonding includes metal to metal bonds.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: July 13, 2021
    Assignee: MONLITHIC 3D INC.
    Inventors: Zvi Or-Bach, Brian Cronquist
  • Patent number: 11058332
    Abstract: In-vivo systems and methods for the detection of early signs of post-surgery infection are described. The in-vivo systems include a drain system with a tube configured to drain fluids from a surgery site, at least one sensor unit for sensing the presence of at least one infection biomarker, a processor for processing a signal generated by the at least one sensor unit, a transmitter for transmitting the signal, and a notification system for receiving the signal, analyzing the signal by comparing it to a threshold, determining presence of infection, and generating an indication on the presence of infection.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: July 13, 2021
    Assignee: Sofradim Production
    Inventor: Yves Bayon
  • Patent number: 11054386
    Abstract: Aspects of the invention are directed to chemical and biological molecule sensing devices, methods of fabricating the chemical sensor devices, and methods of using those devices to detect chemical and biological molecules. The chemical sensor device may comprise a chemically-sensitive vertical slit field effect transistor (VeSFET) with a chemical recognition element attached to a gate structure and/or a channel of the VeSFET. The recognition element may be capable of binding to a chemical of interest such that the binding of the chemical to the recognition element results in a modification of current flow of the VeSFET, resulting in a detectable signal. The chemical sensor device may further comprise an amplifier configured to receive the detectable signal and produce an amplified signal, and an analog-to-digital converter (ADC) configured to receive the amplified signal and to produce a digital signal that represents the amplified signal.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: July 6, 2021
    Assignee: THE CHARLES STARK DRAPER LABORATORY, INC.
    Inventors: Richard H. Morrison, Jr., Andrew P. Magyar
  • Patent number: 11054387
    Abstract: The present disclosure generally relates to semiconductor devices, and more particularly to semiconductor devices integrated with an ion-sensitive field-effect transistor (ISFET) and methods of forming the same. The semiconductor device may include a substrate, a reference gate structure disposed above the substrate, a floating gate structure disposed above the substrate and adjacent to the reference gate structure, where the reference gate structure is electrically coupled to the floating gate structure, and a dielectric layer disposed between the reference gate structure and the floating gate structure.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: July 6, 2021
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Xinshu Cai, Shyue Seng Tan, Eng Huat Toh
  • Patent number: 11004690
    Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: May 11, 2021
    Assignee: Life Technologies Corporation
    Inventors: Phil Waggoner, Jordan Owens
  • Patent number: 10962497
    Abstract: Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: March 30, 2021
    Assignee: International Business Machines Corporation
    Inventors: Qing Cao, Jianshi Tang, Ning Li, Ying He
  • Patent number: 10900952
    Abstract: A biosensor includes a bulk silicon substrate and a vertical bipolar junction transistor (BJT) formed on at least a portion of the substrate. The BJT includes an emitter region, a collector region and an epitaxially grown intrinsic base region between the emitter and collector regions. The biosensor further includes a sensing structure formed on at least a portion of two vertical surfaces of the intrinsic base region of the BJT. The sensing structure includes a channel/trench opening, exposing the intrinsic base region on at least first and second opposing sides thereof, and at least one dielectric layer formed in the channel/trench opening and contacting at least a portion of the intrinsic base region, the dielectric layer being configured to respond to charges in biological molecules.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Alexander Reznicek, Jeng-Bang Yau, Bahman Hekmatshoartabari
  • Patent number: 10890555
    Abstract: A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: January 12, 2021
    Assignee: Technion Research and Development Foundation Ltd.
    Inventor: Yael Nemirovsky
  • Patent number: 10890554
    Abstract: Structures for a sensor and fabrication methods for a sensor. Features each having a top surface and a plurality of side surfaces are formed. A sensing layer is formed on the top surface and the side surfaces of each feature, and an interconnect structure having one or more interlayer dielectric layers is formed over the features. The one or more interlayer dielectric layers include a cavity arranged to expose the sensing layer, and the sensing layer is composed of a material that is sensitive to a property of an analyte solution provided in the cavity.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: January 12, 2021
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Lanxiang Wang, Eng Huat Toh, Shyue Seng Tan, Ping Zheng
  • Patent number: 10889857
    Abstract: Apparatus and methods relating to DNA sequencing are provided. In one embodiment, a DNA sequencing device includes a nanochannel having a width that is approximately 0.3 nm to approximately 20 nm. A pair of electrodes having portions exposed to the nanochannel may form a tunneling current electrode (TCE) with an electrode gap of approximately 0.1 nm to approximately 2 nm, and more particularly about 0.3 nm to about 1 nm. In one embodiment, at least one of the pair of electrodes is formed as a suspended electrode. An actuator may be associated with the suspended electrode to displace it relative to the other electrode. In various embodiments, the nanochannel and/or the electrodes may be formed using thermal reflow processes to reduce the size of such features.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: January 12, 2021
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Xiaomin Yang, ShuaiGang Xiao, David S. Kuo, Koichi Wago, Thomas Young Chang
  • Patent number: 10803966
    Abstract: A method of blowing an antifuse element is disclosed. An antifuse element including a first conductor, a second conductor, and a dielectric layer disposed between the first conductor and the second conductor is received, wherein the dielectric layer has a breakdown voltage. A first voltage is applied between the first conductor and the second conductor within a first time period, wherein the first voltage is less than the breakdown voltage. After applying the first voltage, a second voltage is applied between the first conductor and the second conductor to blow the antifuse element within a second time period, wherein the second voltage is greater than the breakdown voltage.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: October 13, 2020
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Hsih-Yang Chiu
  • Patent number: 10738218
    Abstract: Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below, wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: August 11, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Fangrong Xu, Ping Li, Takeshi Ikeda, Wei Song, Guangnan Jin, Masaaki Umehara, Tsuyoshi Kitada