Abstract: Disclosed herein are devices, systems, and methods can improve the signal-to-noise ratio of measurements made in biological applications. In some embodiments, an amplifier circuit that comprises a three-terminal device is situated in a configuration (e.g., a common-base or similar configuration) that allows the circuit to detect current through a nanopore while providing feedback to the sense electrode to reduce parasitic capacitance between the sense electrode and the counter electrode. The amplifier circuit may include, for example, a bi-polar junction transistor (BJT), a diamond transistor, a CMOS transistor, an operational transconductance amplifier, a voltage-controlled current source, a transconductor, a macro transistor, and/or a second-generation current conveyor (CCII+).

Abstract: Embodiments of the present disclosure provide a metadevice including a substrate, a resonator loop coupled to the substrate. The resonator loop having a first gap in the resonator loop. The metadevice includes an organic electrochemical transistor positioned in the first gap, a gate electrode, and an electrolyte extending between the organic electrochemical transistor and the gate electrode.

Abstract: A sensor can include a redox-active complex. The sensor can be voltage sensitive.

Abstract: Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

Abstract: A detection device and a detection method are provided. The detection device includes at least one detection unit. The detection unit includes a first transistor, a second transistor, a third transistor and a fourth transistor that are electrically connected to each other, a gate is disposed above a channel of each of the first transistor, the second transistor, and the third transistor, and an ion-sensitive membrane is covered above a channel of the fourth transistor. The detection device also includes a first voltage signal terminal, a second voltage signal terminal, and a third voltage signal terminal. Further, the detection device includes a first power supply terminal, a first potential output terminal, a second potential output terminal, and a second power supply terminal.

Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.

Abstract: N-type polymer based electrochemical devices include one or more source electrodes, one or more drain electrodes, one or more channels, a gate electrode, and an electrolyte solution are disclosed. The channels include one or more n-type polymers and one or more enzymes. The gate electrode includes one or more n-type polymers and one or more enzymes. The source and the drain electrodes are electrically connected by the corresponding channel. The electrolyte solution contains one or more metabolites capable of reacting with the one or more enzymes in the channel and the gate electrode and is in electrical contact with the channel and the gate electrode. Saturation current that flows through the channel increases when the metabolites react with the enzymes to produce electrons, which are directly transferred to the n-type polymers at the gate electrode and the channel. Methods of making and using the n-type electrochemical device are also disclosed.

Abstract: A method of operating a pore field-effect transistor (FET) sensor for detecting particles, wherein the pore FET sensor comprises a FET wherein a gate is controlled by a pore filled by a fluid, comprises: controlling a first voltage (Vcis) to set the FET in a subthreshold region; controlling a second voltage (Vtrans) to set a voltage difference between the first and second voltages (Vtrans) such that an effective difference in gate voltage experienced between a minimum and a maximum effective gate voltage during movement of a particle in the fluid is at least kT/q; and detecting a drain-source current in the FET, wherein the particle passing through the pore modulates the drain-source current for detecting presence of the particle.

Abstract: A bio sensor using a FET element and an extended gate, and an operating method thereof are disclosed. A biosensor using a field effect transistor (FET) device and an extended gate electrode according to the present invention is characterized by comprising: an extended gate electrode connected to the FET element; a sensing electrode made of the same material as the extended gate electrode and on which a receptor antibody selectively recognizing a target molecule is fixed; and a reference electrode that maintains a constant potential and is selectively connected to the sensing electrode.

Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.

Abstract: Methods and devices are provided for circuits. One device includes an adjustment circuit having an adjustable resistor for modifying a resistance value of a resistive device, the adjustment circuit connected to an adjustment terminal of the resistive device. The resistance value of the adjustable resistor changes, when a voltage or charge on the adjustment terminal of the adjustable resistor is changed. The adjustable resistor is a phase change element with an adjusting terminal to which different voltage values are applied for adjusting a conversion device threshold value.

Abstract: The invention provides a sensor device comprising an insect odorant receptor (OrX) in electrical communication with a substrate, wherein the sensor device is configured to detect a change in an electrical characteristic of the substrate. The invention also provides sensor device component comprising an insect odorant receptor (OrX) in electrical communication with a substrate. The invention also provides methods for manufacture and use of the sensor device and sensor device component. The invention also provides methods of use of the sensor to detect an analyte.

Abstract: The present disclosure provides a fluid sensor and a method for fabricating a fluid sensor. The fluid sensor includes a substrate including a first material and having a first surface and a second surface opposite to the first surface, wherein the substrate further comprises a recess recessed from the first surface, a first conductive layer over the first surface of the substrate, a protection layer between the first surface of the substrate and the first conductive layer, wherein the protection layer includes a second material, and a through via connected to the recess.

Abstract: The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be coupled to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be coupled to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.

Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

Abstract: The present invention provides device for profiling a biological sample with at least one RNA segment comprising: a metal wire positioned relative to the biological sample such that the sample and the metal wire form a Schottky barrier junction; a bias voltage provider adapted for rectifying the Schottky junction; and; a module for collecting the current over voltage profile of the Schottky junction.

Abstract: The present disclosure provides a microfluidic device and a manufacturing method therefor, and a method for detecting the number of biomolecules and a system for detecting the number of biomolecules. The microfluidic device includes a glass substrate; a plurality of first metal strips formed on the glass substrate; a photoresist covering the plurality of first metal strips; a fluid cavity formed in the photoresist; a plurality of second metal strips formed on the photoresist, wherein a head end of one first metal strip and a tail end of the other first metal strip in any adjacent two first metal strips are electrically coupled through a head end and a tail end of one second metal strip between the two first metal strips, so that the plurality of first metal strips and the plurality of second metal strips form a hollow inductor structure around the fluid cavity.

Abstract: A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

Abstract: Cell monitoring apparatus includes sensing chip and channel module. Sensing chip includes channel region, source and drain regions, and sensing film. The channel region includes first semiconductor material. The source and drain regions are disposed at opposite sides of the channel region, and include a second semiconductor material. Sensing film is disposed on the channel region at a sensing surface of the sensing chip. Channel module is disposed on the sensing surface of sensing chip. A microfluidic channel is formed between the sensing surface of the sensing chip and a proximal surface of the channel module. The microfluidic channel includes a culture chamber and a micro-well. The culture chamber is concave into the proximal surface of the channel module, and overlies the channel region. The micro-well is concave into a side of the culture chamber, and directly faces the sensing film.

Abstract: A microelectromechanical sensor includes a base, a heater provided on the base, and a sensing electrode including a sensing portion. The heater includes a heating portion. The heater and the sensing electrode are provided at different layers in a stacking direction, and the sensing electrode is electrically insulated from the heater. On a reference plane in the stacking direction, a projection of the sensing portion of the sensing electrode is entirely covered by a projection of the heating portion of the heater.

Abstract: An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.

Abstract: In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode, a passivation layer arranged on the first major surface and a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer. The field plate is laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode.

Abstract: Disclosed are methods for assessing the risk that a male subject is affected by prostate cancer and to methods for assessing the risk that such cancer is aggressive, by analysing the gaseous headspace of urine samples with at least three metal oxide semiconductor-based gas sensors, wherein the metal oxide of the first gas sensor is pure or doped SnO2, the metal oxide of the second sensor is pure or doped ZnO and the metal oxides of the third sensor are pure or doped SnO2, pure or doped TiO2 and pure or doped Nb2O5.

Abstract: Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.

Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.

Abstract: Novel integrated circuit environmental and temperature sensors in combination with measurement circuitry fully integrated as part of an ASIC die, which may be co-packaged with a pressure sensor integrated circuit to create a compact yet sensitive environment monitoring product. Embodiments may include one or more integrated local heating elements and control circuitry that are power supply independent, make efficient use of battery power, include an accurate in-built temperature detection capability, and provide digital close-loop control of the heating elements.

Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.

Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.

Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.

Abstract: A comb drive for MEMS device includes a stator and a rotor displaceable relative to the stator in a first direction. The stator includes stator comb fingers and the rotor includes rotor comb fingers. The stator comb fingers are coupled to two high impedance nodes to form high impedance node domains arranged in the first direction. The rotor comb fingers are coupled to two oppositely biased electrodes to form oppositely biased domains. Pairs of capacitors with opposite acoustic polarity are respectively formed between the high impedance node domains and the oppositely biased domains. The comb drive of the present invention has increased electrostatic sensitivity for a given unit cell cross-sectional area whilst maintaining an acceptable capacitance and linearity of voltage signal vs displacement. Extra force shim unit cells may be used, which allows for the stiffness between the rotor and stator to be controlled and reduced to zero for a particular displacement range, without impacting sensitivity.

Abstract: A nanobio-sensing device includes: a substrate; a source electrode and a drain electrode which are disposed on the substrate and spaced apart from each other; a sensing film which serves as a channel connecting the source electrode and the drain electrode and is in contact with at least a part of the source electrode and the drain electrode; a first gate electrode which is a floating gate, extends while one end of the first gate electrode is in contact with a part of the sensing film, and is capable of being in contact with a part of the source electrode and/or the drain electrode; and a second gate electrode which is in contact with the other end of the first gate electrode to form a first gate stacked structure.

Abstract: A memristive device includes a biomaterial comprising protein nanowires and at least two electrodes in operative arrangement with the biomaterial such that an applied voltage induces conductance switching. An artificial neuron or an artificial synapse includes a memrisitive device with the electrodes configured to apply a pulsed voltage configured to mimic an action-potential input.

Abstract: A passivation process includes the successive steps of a) providing a stack having, in succession, a substrate based on crystalline silicon, a layer of silicon oxide, and at least one layer of transparent conductive oxide; and b) applying a hydrogen-containing plasma to the stack, step b) being executed at a suitable temperature so that hydrogen atoms of the hydrogen-containing plasma diffuse to the interface between the substrate and the layer of silicon oxide.

Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Abstract: A monolithic, three-dimensional (3D) integrated circuit (IC) device includes a sensing layer, a memory layer, and a processing layer. The sensing layer includes a plurality of carbon nanotube field-effect transistors (CNFETs) that are functionalized with at least 50 functional materials to generate data in response to exposure to a gas. The memory layer stores the data generated by the plurality of CNFETs, and the processing layer identifies one or more components of the gas based on the data generated by the plurality of CNFETs.

Abstract: A moisture sensor comprises a carrier element comprises an insulating material, a first and a second electrode structure at a distance from one another at the carrier element, a moisture-sensitive, dielectric layer element at a first main surface region of the carrier element and adjacent to the first and second electrode structures and a third electrode structure on a first main surface region of the moisture-sensitive, dielectric layer element, such that the moisture-sensitive, dielectric layer element is between the third electrode structure and the first electrode structure and between the third electrode structure and the second electrode structure. The first electrode structure is a first capacitor electrode and the second electrode structure is a second capacitor electrode of a measurement capacitor for capacitive moisture measurement, wherein the third electrode structure is a floating electrode structure.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: Aspects describe a nanotube array gas sensor, and methods to manufacture and use the same. In one example, the nanotube array gas sensor comprises an insulator template including an array of parallel aligned, open-ended nanotubes; a sensing material deposited on at least interior surfaces of the nanotubes; and catalyst nanoparticles distributed on the sensing material. An electronic controller activates electrodes made of different conductor materials in order to obtain multiple measurements of electrical resistance across the insulator template. The electrical resistance measurements can be compared to electrical resistance profiles in order to determine types and concentrations of gases in the nanotube array gas sensor.

Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Abstract: In a floating gate semiconductor nanostructure biosensor and a method for manufacturing the biosensor, the nanostructure biosensor includes a substrate, an insulating layer, a nanostructure, a source electrode and a drain electrode, a floating gate and a biological sensing material. The insulating layer is formed on the substrate. The nanostructure is protruded from the insulating layer. The source electrode and the drain electrode are formed on the insulating layer and dispose the nanostructure therebetween. The floating gate has a metal pattern or a polysilicon pattern, and extends with contacting the nanostructure. The biological sensing material has a first end combined with an immobile molecule on the floating gate, and a second end combined with a bio molecule.

Abstract: In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Abstract: A sensor including a surface plasmon resonance detector with a reservoir for containing a liquid sample. The sensor further includes a sensing metallic film positioned within the reservoir so that at least a majority of a surface of the sensing metallic film is to be in contact with the liquid sample being housed within the reservoir. The sensory also includes a semiconductor device having a contact in electrical communication with the sensing metal containing film that is positioned within the reservoir. The semiconductor device measures the net charges of molecules within the liquid sample within a Debye length from the sensing metallic film.

Abstract: An organic light emitting diode (OLED) device and the method of manufacturing thereof. The OLED device comprising a substrate, a display region, a non-display region, and an encapsulation structure; wherein the encapsulation structure comprises: at least one ring of barrier wall on the non-display region; an encapsulating film laminate covering the display region and the non-display region, the encapsulating film laminate comprising an organic film; an organic thin film detecting device surrounding the barrier wall, after detecting that the organic film overflows the barrier wall, the organic thin film detecting device emits an electrical signal indicating overflow.

Abstract: A storage device of an embodiment includes a first conductive layer; a second conductive layer; a fluid layer between the first conductive layer and the second conductive layer; particles in the fluid layer; a first control electrode between the first conductive layer and the second conductive layer; a first insulating layer between the first conductive layer and the first control electrode surrounding the fluid layer; and a second insulating layer between the first control electrode and the second conductive layer surrounding the fluid layer. In this storage device, a first cross-sectional area of the fluid layer in a first cross-section perpendicular to a first direction is smaller than a second cross-sectional area of the fluid layer in a second cross-section perpendicular to the first direction. The first cross-section includes the first control electrode, and the second cross-section includes the second insulating layer.

Abstract: Example devices include a cis well associated with a cis electrode, a trans well associated with a trans electrode, and a field effect transistor (FET) positioned between the cis well and the trans well. Examples of the field effect transistor (FET) include a fluidic system defined therein. The fluidic system includes a first cavity facing the cis well, a second cavity fluidically connected to the trans well, and a through via extending through the field effect transistor from the first cavity. A first nanoscale opening fluidically connects the cis well and the first cavity, the first nanoscale opening having an inner diameter. A second nanoscale opening fluidically connects the through via and the second cavity, the second nanoscale opening having an inner diameter. The second nanoscale opening inner diameter is larger than the first nanoscale opening inner diameter.

Abstract: A sensing unit includes a plurality of first sensing electrodes of a first group disposed in a sensing area in a first direction, and a first sensing line electrically connected to one of the first sensing electrodes of the first group. The first sensing line is disposed in the sensing area and extends in a second direction intersecting the first direction.

Abstract: A device for monitoring a cell culture includes one or more electrochemical sensors configured to be positioned adjacent to or embedded within a medium of a cell culture. The one or more electrochemical sensors are configured to generate signals in accordance with the cell culture. A data storage device is configured to receive and store the signals from the one or more electrochemical sensors. A computation device is configured to analyze the signals from the one or more electrochemical sensors to determine cell activity over time using sensitivity information.

Abstract: A sensor device includes a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions respectively. The source regions and drain regions are at least partially disposed within the substrate. The second gate structure includes first and second gate elements, and a resistance region configured to provide a resistance to a second current flow through the second channel region. In use, the first gate structure may receive a solution, and a change in pH in the solution changes a first current flow through the first channel region. In turn, the second current flow through the second channel region changes to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.