Abstract: A BGA package and a method for fabricating the package are provided. The package includes a semiconductor die, internal conductors wire bonded to bond pads on the die, external ball contacts attached to ball bonding pads formed on the conductors in a dense grid pattern, and an encapsulating resin encapsulating the die and conductors. The package is fabricated using a lead frame having lead fingers that form the conductors. The die is back bonded to a polymer tape placed across the lead fingers, and then wire bonded to bonding pads on the conductors. In addition, the encapsulating resin is molded to include openings for the ball contacts which are aligned with the ball bonding pads. An alternate embodiment BGA package includes a polymer substrate adhesively bonded to a face of the die. The polymer substrate includes conductors having beam leads aligned with an opening through the polymer substrate. The opening provides access for a bonding tool for bonding bumps on the beam leads to bond pads on the die.

Abstract: A lead frame of a plastic integrated circuit package is fabricated in two steps. First, from a rectangular sheet of metal, lead fingers of the lead frame are formed. Second, the die pad of the lead frame is clamped and is simultaneously separated and downset from the lead fingers of the lead frame by shearing the lead frame with a mated punch die pair. Performing the separation and downset of the die pad from the lead fingers results in essentially no horizontal gap between the lead fingers and the die pad. The downset of the die pad with respect to the lead fingers results in a vertical separation between the die pad and the lead fingers.

Abstract: Two dice may be provided within a single package so that one pin and associated leadfinger may be coupled to bond pads on different dice. This may mean that two different bond pads on different dice are coupled, for example by wirebonding, to the same leadfinger. An adhesive tape may be secured so as to bridge the two dice. One or more conductive traces are formed on the upper side of the adhesive tape and adhesive is provided on the other side to secure the tape to the two dice. As a result, wire bonds may be made from a pad on one die to a trace and then from the opposite side of the trace to a leadfinger. At the same time, a wire bond may be made from a pad on the other die to the same leadfinger. In another embodiment, an adhesive tape with a conductive trace on it may be used as a wire bond bridge to join spaced bond pads on a single chip.

Abstract: First pad electrodes for connection to leads and second pad electrodes for an internal interface, are provided over a main surface of a first LSI chip. Third pad electrodes of a second LSI chip and the second pad electrodes of the first LSI chip are respectively electrically connected to one another by wires. Circuits required as for a system LSI, which are not included in the first LSI chip, are placed over the second LSI chip, to implement a desired function used as for a system LSI by the two LSI chips. The system LSI is easily implemented by a semiconductor device wherein a plurality of LSI chips are sealed with a resin.

Abstract: A surface modification layer having a surface modification coefficient of 0.1 to 0.5 is formed on the surface of an organic insulating film on a substrate. A metal wiring is provided on the surface of the organic insulating film having the surface modification layer formed at the surface thereof. Thus, the bonding strength between the metal wiring and the organic insulating film is enhanced.

Abstract: Lead-over-chip leadframes for coupling chip bond pads to the pins of a memory package contain a first plurality of short leads for coupling data chip bond pads to data pins on a first side of the memory package; a first plurality of long leads for coupling data chip bond pads to data pins on a second side of the memory package; a second plurality of short leads for coupling address chip bond pads to address pins on the second side of the memory package; and a second plurality of long leads for coupling address chip bond pads to address pins on the first side of the memory package.

Abstract: In a motor driving device, an IC chip of a drive circuit for driving a motor is die-bonded to one island of a leadframe, and a diode chip of a protection diode for preventing the drive circuit from being destroyed when supplied power is connected to the IC chip with reverse polarities is die-bonded to another island of the leadframe. The supplied-power pad of the IC chip is wire-bonded to the second island, which serves as the cathode electrode of the diode chip.

Abstract: A system substrate for a semiconductor chip has a conductor frame (1); many small-area signal flat conductors (4) extend from webs (2, 3) of the conductor frame and on their free ends have contact terminal faces (5). Remaining faces (6) between the webs (2, 3) and the many signal flat conductors (4) are occupied by large-area flat conductors (7). Between the large-area flat conductors (7) and the webs (2, 3), there are connecting webs (9) with bent areas (8) at various spacings from the webs (2, 3).

Abstract: A lead frame for semiconductor device comprising inner leads, outer leads, and dam bars, the inner leads being divided into two groups which are located in opposed areas of the lead frame divided by the center line of the array of the electrode pads of a semiconductor chip to be mounted on the lead frame, and the inner lead having a first end and a second end, the first ends of the respective inner leads being arranged into arrays along an array of electrode pads of the semiconductor chip, so that the array of the first ends has a pitch corresponding to a pitch in the array of the electrode pads, the second ends of the respective inner leads being arranged into arrays at opposed sides of the lead frame, to have a pitch larger than the pitch in the array of the first ends, wherein at least some of the inner leads are arranged to have lengths between the first and the second ends which are substantially equivalent to each other. A semiconductor device using the lead frame is also disclosed.

Abstract: A packaged semiconductor device that is fabricated with a plurality of conductive leads defined in a strip that beneficially includes a radio frequency shield box. The conductive contacts are located in a housing, beneficially by insert molding or by sandwiching between a bottom piece and a top piece. The housing can further include a cavity that receives a semiconductor device, and the radio frequency shield can receive another semiconductor device. Bonding conductors electrically connect at least one semiconductor device to another semiconductor device and/or to the conductive contacts. A conductive cover is disposed over the housing. The cavity beneficially includes a beveled wall and the conductive leads and the radio frequency shield are beneficially comprised of copper.

Abstract: An integrated circuit device comprising a semiconductor connection component attached to a semiconductor die with an electrically conductive adhesive material. The integrated circuit device is structured with a semiconductor connection component having a first portion horizontally offset from a second portion, the first portion of the semiconductor connection component carrying the adhesive material. The semiconductor connection component may be a lead frame element having a lead finger. The semiconductor connection component with the electrically conductive adhesive material attached to the first portion thereof is a terminal such as a bond pad on a surface of a semiconductor die. The electrically conductive adhesive material is precisely applied in a simple manner, little adhesive material is wasted, and a one-step electrical/mechanical connection to bond pads of the die is provided.

Abstract: A stackable ball grid array (BGA) or fine ball grid array (FBGA) semiconductor package particularly suitable for board-on-chip or chip-on-board applications in which a low-profile BGA or FBGA semiconductor package is needed. The stackable ball grid array (BGA) or fine ball grid array (FBGA) provides a semiconductor package that is capable of being burned-in and tested in a more efficient and cost-effective manner than prior known BGA or FBGA semiconductor packages. A high-density, low-profile memory module incorporating a plurality of the disclosed BGA or FBGA semiconductor packages in a stacked arrangement is further disclosed.

Abstract: A stackable ball grid array (BGA) or fine ball grid array (FBGA) semiconductor package particularly suitable for board-on-chip or chip-on-board applications in which a low profile BGA or FBGA semiconductor package is needed. The present invention provides a semiconductor package which is capable of being burned in and tested in a more efficient and cost effective manner than prior known BGA or FBGA semiconductor packages. A high density, low profile memory module incorporating a plurality of the disclosed BGA or FBGA semiconductor packages in a stacked arrangement is further disclosed. Exemplary BGA or FBGA semiconductor packages of the present invention generally comprise a substrate having a semiconductor device attached to a selected surface thereof. The semiconductor device has a plurality of bond pads respectively wire bonded to a plurality of bond pads located on the substrate.

Abstract: A semiconductor integrated circuit device, and method of manufacturing the same, having a conventional-type lead frame with the die paddle removed. In particular, the die paddle is replaced with a section of tape that is supported by the ends of the lead fingers. The semiconductor die is attached to the tape so that it may be wire bonded to the lead fingers. The tape contains at least one slot to allow for expansion and/or contraction of the tape due to various temperatures experienced during the manufacturing process so that the tape does not wrinkle or warp to alter the position of the die.

Abstract: A multilayer lead frame for decoupling a power supply to a semiconductor die includes overlaying first and second lead frame bodies having an insulator disposed therebetween and at least one main lead finger extending from each body. The bodies act as a capacitor to decouple the power supply to the die. One of the bodies and respective finger provides one of power supply and ground connections for wire bonding with the die, and the other of the bodies provides the other of power supply and ground connections for wire bonding with the die. The first body includes a die paddle for supporting the die, and the second body includes a plate for overlaying the paddle with the insulator disposed between the paddle and plate, thereby providing an electrical decoupling effect therebetween upon supplying power and ground connections, respectively.

Abstract: A circuit board for semiconductor packages capable of fabricating a large number of semiconductor packages in a single circuit board, the circuit board including: a resin layer in the form of a rectangular sheet with first and second sides, the resin layer having a plurality of through holes arranged in rows and columns sharing a sub slot of a predetermined length as a common boundary to form one sub strip for mounting a semiconductor chip, a plurality of the sub strips being arranged in a row and sharing a main slot of a predetermined length as a common boundary to form one main strip; a plurality of circuit patterns each formed in the resin layer between the through hole of the individual sub strip and the sub slot; and a cover coat coated on the resin layer for the purpose of protecting the circuit patterns against external environments.

Abstract: A semiconductor device assembly package includes a semiconductor device having components thereon which are generic to a variety of applications by manipulation of the pinout configuration. The lead frame includes redundant leads for connection to the semiconductor device, as desired. The semiconductor device may include redundant wire bond pads, each redundant pair including one pad on a lateral edge and one pad on a non-lateral edge of the die. In applications requiring less than all of the available leads, the pinout configuration of the leadframe is adjusted to use the extra space from unused NC leads and missing pins for providing wider, shorter leads with reduced inductance, and wider paddle arms for reduced bending and breakage.

Abstract: An ultra-thin semiconductor package device comprises a heat-resistant film-type adhesive support tape which connects a semiconductor chip to a plurality of individual lead frames, wherein each lead frame is connected to an associated one of a plurality of electrode pads of the semiconductor chip by a plurality of bonding wires. An encapsulating molding material provides environmental protection for the completed package. Within the encapsulating molding, the semiconductor chip is mounted on a same underside of the support tape as the plurality of lead frames, such that the bottom of the semiconductor chip is aligned with the bottom of an encapsulating molding, and the height of a loop in each bonding wire is minimized.

Abstract: A semiconductor device comprising a lead frame that includes a large area mount pad having small elevated pads to which a semiconductor chip is attached. The small mount pads coupled with usage of a minimal amount of chip attach adhesive provide improved reliability against vapor phase package cracking, and further allow a given lead frame to be used by a family of chip sizes and shapes. The large pad provides good thermal dissipation, as well as stress relief during fabrication of the lead frame.

Abstract: An ultra-thin semiconductor package device comprises a heat-resistant film-type adhesive support tape which connects a semiconductor chip to a plurality of individual lead frames, wherein each lead frame is connected to an associated one of a plurality of electrode pads of the semiconductor chip by a plurality of bonding wires. An encapsulating molding material provides environmental protection for the completed package. Within the encapsulating molding, the semiconductor chip is mounted on a same underside of the support tape as the plurality of lead frames, such that the bottom of the semiconductor chip is aligned with the bottom of an encapsulating molding, and the height of a loop in each bonding wire is minimized.

Abstract: A semiconductor device package structure is proposed, which allows the encapsulation body to be highly secured in position to the leads, making the encapsulation body hardly delaminated from the leads. The proposed semiconductor device package structure comprises a die pad; a semiconductor chip mounted on the die pad; a plurality of leads arranged around the die pad, each lead being formed with a bolting hole; a plurality of bonding wires for electrically coupling the semiconductor chip to the leads; and an encapsulation body which encapsulates the semiconductor chip and the bonding wires and includes a part filled in the bolting hole in each of the leads. The bolting hole is characterized in the forming of a constricted middle part or an inclined orientation with respect to the lead surface, which allows the encapsulation body to be highly secured in position to the leads, thereby making the encapsulation body hardly delaminated from the leads.

Abstract: A semiconductor device exhibiting a lower incidence of burrs forming on its contacts during the singulation process. The semiconductor device includes a die which is electrically connected to a set of contacts wherein each contact has a contact surface and a non-contact surface. Each contact surface of the contacts contains a recessed region filled with a first deposit of molding material. The die and the non-contact surfaces of the contacts are encapsulated with a second deposit of molding material. The semiconductor device is singulated from a molded lead frame by guiding a saw blade through recessed regions formed on the contact surface of the contacts. The molding material in the recessed regions creates a “buffer zone” which separates the path of the saw blade from the contact surface of the contacts.

Abstract: Microelectronic-device assemblies and methods are provided that enhance operation of microelectronic devices because they exclude extraneous elements from sensitive device areas. They are especially suited for devices that carry a plurality of bonding pads on a circuit face that has a sensitive area. A lead frame defines a paddle that has an area less than that of the device face. The paddle is spaced from the face and positioned to cover the sensitive area and expose the pads. A plastic ring is arranged to surround the sensitive area and abut the face and the paddle. Encapsulation in an overmold thus forms a void within the ring and between the device face and the paddle and extraneous elements are excluded from this void.

Abstract: A lead frame for assembly of semiconductor devices allows the wireless bonding of a die thereto. The lead frame includes a plurality of conductive leads the near ends of which are arranged together in a predetermined pattern that defines the die mounting area. The near end of one of the plurality of conductive leads is extended to extend inwardly of the die mounting area and is stamped to produce a stepped down portion with respect to the remaining end portion thereof. The near ends of the plurality of conductive leads, as well as, the remaining near end portion of lead having the stepped down portion are solder clad. In the assembly process, solder paste is dispensed onto the stepped down portion and the die is placed on the near ends of the conductive leads. The solder paste holds the die in place prior to reflow of the solder clad.

Abstract: A semiconductor package includes a substrate panel, a chip, an upper package encapsulant, and a lower package encapsulant. The chip is mounted to the substrate panel and below a hole in the substrate panel. A number of wires interconnect the leads on the chip with the leads on the substrate panel. The upper package encapsulant is formed on the upper side of the substrate panel by filling molten liquid plastic material into an upper mold placed on the upper side of the substrate panel. The lower package encapsulant is formed on the underside of the substrate panel by filling molten liquid plastic material into a lower mold placed on the underside of the substrate panel.

Abstract: A mounting structure in which a photovoltaic element is mounted together with a metal body for outputting a power generated by said photovoltaic element to the outside, said photovoltaic element having a light receiving face and a non-light receiving face and having a pair of electrodes on said non-light receiving faces said metal body having a first surface and a second surface opposite said first surface, wherein said photovoltaic element is joined to said first surface of said metal body and an electrically insulative joining material is joined to said second surface of said metal body.

Abstract: In a two-pole SMT miniature housing in leadframe technique for semiconductor components, a semiconductor chip is mounted on one leadframe part and is contacted to a further leadframe part. The further leadframe part is conducted out of the housing in which the chip is encapsulated as a solder terminal. No trimming or shaping process is required and the housing is tight and is capable of further miniaturization. The solder terminals as punched parts of the leadframe are conducted projecting laterally from the housing sidewalls residing opposite one another at least up to the housing floor which forms the components' mounting surface. The chip mounting surface and the components' mounting surface form a right angle with one another.

Abstract: An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer is formed on the semiconductor substrate, and a channel dielectric layer formed on the device dielectric layer has an opening formed therein. A barrier layer of titanium, tantalum, tungsten, or a nitride of the aforegoing is deposited to line the opening, and a copper or copper alloy conductor core is deposited to fill the channel opening over the barrier layer. After planarization of the conductor core and the barrier layer, an ammonia, nitrogen hydride, or hydrogen plasma treatment is performed below 300° C. to reduce the residual oxide on the conductor core material. The plasma treatment is followed by the deposition of a silicon nitride capping layer performed below 300° C. After the reducing and deposition process, a densification process is performed between 380° C. and 420° C.

Abstract: A stackable ball grid array (BGA) or fine ball grid array (FBGA) semiconductor package particularly suitable for board-on-chip or chip-on-board applications in which a low profile BGA or FBGA semiconductor package is needed. The stackable ball grid array (BGA) or fine ball grid array (FBGA) provides a semiconductor package that is capable of being burned in and tested in a more efficient and cost effective manner than prior known BGA or FBGA semiconductor packages. A high density, low profile memory module incorporating a plurality of the disclosed BGA or FBGA semiconductor packages in a stacked arrangement is further disclosed.

Abstract: Memory chips containing multiple-bank memory devices are arranged to be mounted in a memory package with the major axis of the memory chip aligned substantially parallel with the major axis of its memory package. Memory devices of various embodiments contain banks of non-volatile flash memory cells and have access commands synchronized to a system clock. Data chip bond pads for coupling to data pins of a memory package are located in a first quadrant of the memory chip. Address chip bond pads for coupling to address pins of a memory package are located in an opposite quadrant of the memory chip.

Abstract: A lead frame for a semiconductor package including a rectangular lead frame body having a central opening, a plurality of leads arranged at and along each of two or four facing sides of the lead frame body, the leads extending in flush with the lead frame body, and a semiconductor chip mounting plate positioned on a plane not flush with a plane, where the leads are positioned, the semiconductor chip mounting plate being supported by down-set tie bars and provided with at least one groove having a rectangular ring shape while serving to prevent a penetration of moisture and to provide an increased coupling strength for the semiconductor chip mounting plate, the semiconductor chip mounting plate also serving as a heat sink. A ground bridge bar having a rectangular ring shape is arranged between the semiconductor chip mounting plate and the leads and supported by another tie bars.

Abstract: A protection device for integrated circuits which prevents inadvertent damage caused by over-voltage power surges. The protection device comprising an insulating carrier having a ground plane thereon and a plurality of conductive pads around a periphery thereof. The plurality of conductive pads are spaced from the ground plane with a precision gap therebetween. When the protection device is placed over the integrated circuit chip, the plurality of conductive pads are coupled to the bonding pads of the integrated circuit and at least one of the conductive pads is coupled to the ground plane.

Abstract: Provided is an interposer tape which provides electrical communication between a die and a packaging substrate. The dimensions of the interposer tape may vary to accommodate a variety of die sizes for the same packaging substrate. The interposer tape includes an array of traces. A first set of wire bonds is formed between the array of traces and the die. A second set of wire bonds is formed between the array of traces and the packaging substrate.

Abstract: A stackable ball grid array (BGA) or fine ball grid array (FBGA) semiconductor package particularly suitable for board-on-chip or chip-on-board applications in which a low-profile BGA or FBGA semiconductor package is needed. The stackable ball grid array (BGA) or fine ball grid array (FBGA) provides a semiconductor package that is capable of being burned-in and tested in a more efficient and cost-effective manner than prior known BGA or FBGA semiconductor packages. A high-density, low-profile memory module incorporating a plurality of the disclosed BGA or FBGA semiconductor packages in a stacked arrangement is further disclosed.

Abstract: A chip card module contains, in addition to conductor tracks and a chip carrier, one or more semiconductor chips and, if necessary, a stiffening frame. The semiconductor chip(s) and/or stiffening frame are attached with the aid of an adhesive, with which particles of a defined size are admixed as spacers. The adhesive in preferably a flexible adhesive, and the particles preferably are formed of a deformable material. The invention has the effect that the semiconductor chip(s) and/or stiffening frame are adhesively attached to the underlying surface at a defined, uniform distance. The flexible adhesive and the deformable particles adapt to deformations of the chip card module and thus prevent damage to the adhesively bonded mating surfaces.

Abstract: On a semiconductor material body housing an electronic device a peripheral region of semiconductor material and at least one pad are initially formed. The peripheral region is connected to a first terminal of the electronic device and extends on at least one peripheral portion of the semiconductor material body. The pad is insulated from the semiconductor material body and is electrically connected to a second terminal of the electronic device. The semiconductor material body is fixed to a support body formed by a blank belonging to a reel. The pad is connected by a wire to an electrode formed by the blank. Next, a connection region is formed on the peripheral region and surrounds, at least partially, the semiconductor material body and the support body. The connection region is advantageously obtained by galvanic growth.

Abstract: A chip of semiconductor material is fixed to a supporting area of a film of insulating material. Electrical interconnecting elements join metallized areas of the chip to the ends of metal strips which form the terminals of the device. To obtain devices with numerous terminals without approaching the dimensional limits imposed by the manufacture of the terminal frames, the interconnecting elements include electrically conductive tracks formed on the film of insulating material. The electrical connection between the ends of the terminals and the tracks is made by strips of anisotropic conductive material.

Abstract: Outer leads extend outward from within a package that seals a semiconductor chip, and they are connected to the semiconductor chip inside the package. Depressions are formed at the distal end portions of the outer leads. The depressions are coated with a material which is one of: Sn—Pb, Sn—Ag, Sn—Bi, Sn—Zn, Sn—Cu, Pd, Au and Ag. The depressions are V-shaped, U-shaped, or rectangular. Each depression has a depth which is 30% to 75% with respect to the thickness which the outer lead has at the cut end face of distal end thereof. The outer leads are either a gull-wing type or a straight type.

Abstract: A microwave circuit or a millimeter wave circuit is formed on a semiconductor chip. A multilayer substrate is formed of a first dielectric layer, a second dielectric layer and a third dielectric layer. A high-frequency circuit line with the semiconductor chip mounted thereon is formed on the third dielectric layer. A slot hole is formed on one side of the second dielectric layer and an antenna feeding line is formed on the other side. The first dielectric layer has a plurality of slot holes formed therein that radiate electromagnetic waves. An organic substrate is laminated to the multilayer substrate by an adhesion layer.

Abstract: A leadframe for use with integrated circuit chips Comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment; and a plated layer of solder on said nickel layer, selectively covering areas of said leadframe intended for parts attachment.

Abstract: This invention prevents deterioration in characteristics of a semiconductor device having a lead frame that is thin and uniform in thickness. More specifically, this invention relieves resin distortion caused by a difference in thermal expansion coefficients between the lead frame and the sealing resin in order to prevent the characteristic deterioration caused by some factors such as moisture invasion from outside and mechanical pressure. A lead frame for a resin-sealed semiconductor device of this invention is composed of an element-mount part, a horizontal part for fixing the lead frame for resin sealing, and a central lead having side leads formed in parallel on both sides thereof. The element-mount part, the horizontal part and the central lead are formed integrally. In the lead frame, at least one pair of resin-anchoring parts are formed on two opposing sides on the periphery of the element-mount part.

Abstract: A semiconductor apparatus substrate according to the present invention has a substrate, a piece-substrate that has been punched out of the substrate and pushed back to the original position, an opening unit formed in a region of the substrate that substantially surrounds the piece-substrate, and a support unit installed inside the opening unit. As a result of this configuration, in transporting the semiconductor apparatus substrate after the piece-substrate has been pushed back, the piece-substrate is prevented from falling off the semiconductor apparatus substrate.

Abstract: A semiconductor package includes a semiconductor chip which is mounted on a die pad which is smaller than the semiconductor chip, a die pad supporter which supports the die pad, the die pad supporter having a stress absorbing portion and the stress absorbing portion which is disposed under the semiconductor chip.

Abstract: The present invention relates to a packaged semiconductor that includes a semiconductor having a plurality of leads extending therefrom. The leads are formed by mounting the semiconductor device in a lead frame and punching and sealing the leads in the semiconductor device using a resin, wherein the leads have been bent to a predetermined configuration. A connector is further provided to connect leads to the frame, and the connector is bent at substantially the same time as when the leads are bent to the predetermined configuration. According to the packaged semiconductor, a lead is not cut off from a lead frame, and the connection between the two can be maintained even after a bending process is finished.

Abstract: An inventive Leads-Over-Chip (LOC) lead frame includes an assembly of interdigitated leads constructed to overlie double-sided adhesive tape on the front-side surface of an integrated circuit (IC) die. An attachment surface of each lead is adhesively attachable to the tape, and at least some of the leads are constructed to extend across the front-side surface of the die from one edge substantially to another edge, such as an adjacent or opposing edge. As a result, a substantial area of the front-side surface of the die is adhesively attachable to the leads through the tape, so the die is supportable in an IC package in an improved manner, and the heat may be conducted away from the die through the lead frame in an improved manner.

Abstract: A tape carrier for TAB includes a base material having an insulating property and an elongated shape. The base material has peripheral edges defining an opening for disposing an integrated circuit component. A first pair of portions of the peripheral edges face each other, and a second pair of portions of the peripheral edges face each other. A plurality of connection leads extend from the first pair of portions into the opening. A plurality of dummy leads extend from the second pair of portions into the opening.

Abstract: A vertically mountable semiconductor device including a plurality of stub contacts extending perpendicular from a bottom edge thereof. A complementary alignment device includes a receptacle for receiving the vertically mountable semiconductor device. The alignment device is attachable to a carrier substrate. Upon attachment of the alignment device to a carrier substrate and insertion of a vertically mountable semiconductor device into the receptacle, a contact element applies a downward force to the vertically mountable semiconductor device to establish and maintain an electrical connection between the vertically mountable semiconductor device and the carrier substrate.

Abstract: A hybrid integrated circuit includes a metal lead frame, a wiring structure, an integrated circuit chip, and a lead. The wiring structure is comprised of a wiring layer formed on the upper surface of the lead frame through an insulating layer. The integrated circuit chip is arranged on the wiring structure and connected to a predetermined portion of the wiring structure. A terminal is arranged near the lead frame to be insulated and isolated from the lead frame and connected to the predetermined portion of the wiring structure. The insulating layer has an extending connecting portion extending from the wiring structure to be connected to the lead frame. A fixed potential is connected to the integrated circuit chip through the extending connecting portion and the lead frame.

Abstract: A semiconductor device includes a semiconductor chip having a plurality of electrodes formed on a first major surface thereof, a resin package sealing the semiconductor chip therein, of leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: A lead frame comprises: outer leads formed by a metal base member; first interconnection film portions formed by a metal plating layer, each of which is disposed inside the outer leads in such a manner as to be connected to an inner end of one principal plane of the corresponding one of the outer leads, and at least one second interconnection film portion formed by the metal plating layer, which is disposed inside the outer leads in such a manner as not to be connected to the outer leads; and an insulating film formed to cover planes, opposed to the outer leads, of the first and second interconnection film portions, thereby holding the first and second interconnection film portions; wherein planes, opposed to the insulating film, of the first and second interconnection film portions are taken as semiconductor element mounting planes.