Abstract: A micromechanical component having at least two caverns is provided, the caverns being delimited by the micromechanical component and a cap, and the caverns having different internal atmospheric pressures. The micromechanical component and cap are hermetically joined to one another at a first specifiable atmospheric pressure, then an access to at least one cavern is produced, and subsequently the access is hermetically closed off at a second specifiable atmospheric pressure.

Abstract: Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.

Abstract: A chip module assembly includes a CO2 getter exposed through a gas-permeable membrane to a chip cavity of a chip module. One or more chips is/are enclosed within the cavity. The CO2 getter comprises a liquid composition including 1,8-diaza-bicyclo-[5,4,0]-undec-7-ene (DBU) in a solvent that includes an alcohol, preferably, 1-hexanol. In one embodiment, a sheet of gas-permeable membrane is heat-welded to form a pillow-shaped bag in which the liquid composition is sealed. The pillow-shaped bag containing the liquid composition is preferably disposed in a recess of a heat sink and exposed to the cavity through a passage between the recess and the cavity. The CO2 getter can remove a relatively large amount of carbon dioxide from the cavity, and thus effectively prevents solder joint corrosion. For example, based on the formula weights and densities of the DBU and 1-hexanol, 200 g of the liquid composition can remove over 34 g of carbon dioxide.

Abstract: Thermally tuned lasers may use a resistive thermal device (RTD), sensitive to hydrogen, within a hermetic enclosure. Over time, hydrogen trapped within the enclosure or out gassed from other components within the enclosure may degrade the accuracy of the RTD. A vent comprising a hydrogen selective permeable membrane, such as palladium or a palladium alloy, provided in the enclosure vents hydrogen to mitigate damage to the RTD.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: The invention provides a pressure sensor with a housing for a pressure sensing arrangement, e.g. a semi-conductor arrangement. The housing consists of a bottom part and an intermediate member with a through hole forming a sidewall of a cavity for the pressure sensing arrangement. A membrane is attached to the intermediate member to cover an opening of the cavity, and to allow pressure from outside to propagate into a pressure transmitting medium contained inside the housing and thus to the pressure sensing arrangement therein. The invention also provides a method of making a pressure sensor with a housing of the above-described kind.

Abstract: An electronic device according to the present invention includes: a cavity, which is surrounded with a cavity wall portion and which has a reduced pressure; a gettering thin film, which is arranged in the cavity and has the function of adsorbing a surrounding substance; and an activating portion, at least a part of which is arranged in the cavity and which has the function of activating the gettering thin film by generating heat.

Abstract: A chip structure comprising a substrate, a conductive layer, a plurality of bumps and a trap layer is provided. The substrate has a plurality of pads and the conductive layer is disposed on the pads. The bumps are disposed on the conductive layer above the pads and the trap layer is disposed between two adjacent bumps. In addition, a process of fabricating the chip structure is provided.

Abstract: A semiconductor package includes a substrate, and a semiconductor die flip chip mounted to the substrate. The package also includes substrate circuitry on a circuit side of the substrate, die circuitry on a back side of the die, terminal contacts on the die circuitry, bonded connections between the substrate circuitry and the die circuitry, and an encapsulant on the bonded connections and edges of the die. The die can include an image sensor on the circuit side configured to receive electromagnetic radiation transmitted through the substrate. A method for fabricating the package includes the step of providing a wafer with multiple dice, forming the die circuitry on the dice, and simulating the wafer into individual dice.

Abstract: An ESD protection apparatus for an electrical device with a circuit structure having an internal terminal, which is connected to an external terminal of the electrical device via a conductive connection, has a gas-filled cavity, through which the conductive connection extends at least partly, and a reference electrode in the cavity, wherein the conductive connection is disposed such in the cavity, that when applying a potential exceeding a predetermined threshold to the external terminal, a gas discharge occurs from the conductive connection to the reference electrode.

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer.

Abstract: The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and a layer of a gas absorbing or purifier material is deposited on the base by a variety of techniques and a layer for temporary protection of the purification material is placed on top of the purification material. The temporary protection material is compatible for use in the microdevice and can be removed during the manufacture of the microdevice.

Abstract: A MEMS device is packaged with a control material that is included in the package to affect an operation of a moveable element of the device. The control material may affect operational characteristics including actuation and release voltages and currents, mechanical affects including damping and stiffness, lifetime of the device, optical properties, thermal affects and corrosion. The control material may be inserted into the package as part of any of several structural components of the package or the MEMS device.

Abstract: A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.

Abstract: A solid-state laser apparatus includes a cavity 17 for storing a laser diode 40 and a laser medium 6 to be excited by the laser diode 40, and a storage unit 70, for communicating with the cavity 17 and for internally storing a drying agent 71. A moisture permeable film 72 is formed at openings 73 whereat the cavity 17 and the storage unit 70 communicate with each other.

Abstract: A semiconductor device includes a hermetically sealed housing having a top member and a bottom member. The bottom member includes a recess. A semiconductor die is enclosed within the housing. Absorbing material is positioned in the recess under the semiconductor die. A porous film is positioned between the semiconductor die and the absorbing material.

Abstract: An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a vacuum device disposed on a portion of the substrate. Electrical power pulses activate the non-evaporable getter material.

Abstract: One embodiment of the invention relates to a microdevice package containing getters for maintaining a constant vacuum level within the sealed microdevice package. A stacked wafer assembly, containing a plurality of microdevice packages, is formed by aligning a bottom cover wafer with a center wafer. The bottom cover wafer includes one or more bond pads to receive one or more getters. The center wafer includes one or more vias substantially aligned and corresponding to the one or more bond pads. One or more getters are inserted into the one or more vias. The stacked wafer assembly is completed by aligning a top cover wafer opposite the bottom cover wafer to sandwich the center wafer in between. A constant vacuum level is maintained inside the microdevice packages by aligning the wafers, activating the getters, and sealing the microdevice packages in a given sequence.

Abstract: Organic electronic device structures are provided, which comprise: (a) a first portion comprising a substrate and an organic electronic device region (e.g., an OLED region) disposed over the substrate; (b) a second portion comprising a cover and a getter region; and (c) a radiation-curable, pressure-sensitive adhesive layer disposed between the first and second portions and adhering the first and second portions to one another. The adhesive layer is disposed over the entire organic electronic device region and over at least a portion of the substrate. Other aspects of the present invention are directed to methods of making the above structures.

Abstract: An anchor to hold getter materials in place within a micromechanical device package substrate. First and second cavity faces define an anchor cavity and mechanically retain a getter away from a region holding the micromechanical device. The getter anchor may be formed in a substrate comprised of at least three layers. The layers form a cavity in the substrate with a wide bottom portion—formed in the middle layer and a relatively narrower top portion—formed by the top layer. The narrow portion helps to retain the getter in the cavity by creating a mechanical lock on the wide portion of getter in the bottom of the cavity.

Abstract: The present invention provides a lubricant container inside a microelectromechanical device package. The lubricant container contains selected lubricant that evaporates from the container and contact to a surface of the microelectromechanical device for lubricating the surface.

Abstract: A method for preparing a non-thermal plasma reactor substrate includes disposing electrical vias on green stage first and second ceramic plates; filling the electrical vias with conductive material; and forming electrical contact via cover pads; disposing conductive material on the first ceramic plate to form an electrode plate having a main electrode portion and a terminal lead for electrically connecting the main electrode portion to the electrical vias; laminating the electrode plate and the second ceramic plate together, embedding the electrode therebetween; co-firing the plates to form a laminated co-fired embedded-conductor element; stacking a plurality of the laminated co-fired embedded-conductor elements to form a multi-cell stack, the filled electrical vias aligning in the stack to provide an electrical bus for connecting alternating elements in the stack; and disposing spacers with matching vias and via cover pads between adjacent pairs of elements to form exhaust gas passages.

Abstract: A method, system and materials for use in hydrogen gettering in conjunction with microelectronic and microwave components that are generally hermetically sealed in an enclosure typically referred to as a “package”. Gettering materials that can be used include titanium with or without a hydrogen permeable coating or covering, alloys of zirconium-vanadium iron and zeolites and several ways to apply these materials to the package. In addition, the hydrogen permeable material can be used over a vent from the interior of the package to the exterior wherein hydrogen will escape from the package interior when the hydrogen concentration within the package is greater than without the package.

Abstract: Manufacturable processes and the resultant structures utilize metal hydride as an internal source of hydrogen to enhance heat removal within semiconductor packages that employ low dielectric constant materials. The use of a metal hydride heated by internal or external sources facilitates pressurizing hydrogen gas or hydrogen-helium gas mixtures within a hermetically-sealed package. The configuration of the metal hydride can include, where needed to generate the pressure required in larger packages, a relatively large area of metal hydride material on at least one or a plurality of hydrogen generation-dedicated chips. Alternatively, the configuration can include at least one or a plurality of relatively small “islands” of metal hydride material on each of at least one or a plurality of integrated circuit-bearing chips.

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract: A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

Abstract: A microdevice (20, 120, 220) having a hermetically sealed cavity (22, 122, 222) to house a microstructure (26, 126, 226). In one embodiment, the microdevice (20) comprises a substrate (30), a cap (50) and an isolation layer (70). The substrate (30) has a plurality of conductive traces (38) formed on at least a portion of its top side (32) and outer edge (36). The conductive traces (38) provide electrical conductivity to the microstructure (26). The isolation layer (70) is attached between an outer edge of a sidewall (54) of the cap (50) and the plurality of conductive traces (38). The cavity (22) is at least partially defined by a recess (56) in the cap (50). There is also a microdevice (120) comprising a substrate (130), a cap (150) and a plurality of via covers (170). The substrate (130) has conductive vias (196) that terminate at a contact point (146) within the sealed cavity (122). The via covers (170) are attached to the substrate (130) to provide a hermetic seal.

Abstract: A method for preventing contamination, oxidation and gas absorption of reactive materials, and articles formed thereby. The method generally entails depositing a first layer of a reactive material and a second layer of a substantially nonreactive material so that the second layer protects the first layer from a surrounding atmosphere. For example, the first and second layers may be deposited to form a film on a surface within a chamber that is desired to be maintained in a vacuum during use of the article. The second layer is sufficiently thin such that appropriately heating the first and second layers causes the reactive material of the first layer to become interdiffused with the nonreactive material of the second layer, to the extent that at least a portion of the reactive material is able to react and getter gases from the surrounding atmosphere.

Abstract: A torsion spring for a MEMS structure has a plurality of beams, each beam having two ends wherein both ends are fixed to a predetermined area, and at least one connection bar disposed at a right angle to a lengthwise direction of the plurality of beams, wherein the at least one connection bar connects the plurality of beams. Preferably, the distance between the connection bars is equal to or greater than the width of one of the plurality of beams. Accordingly, a torsion spring according to the present invention has a bending stiffness greater than a torsional stiffness, which allows easier torsion. Further, a torsion spring according to the present invention may be easily fabricated by etching.

Abstract: A hydrogen diffusion port for use in a packaged electronic device. In one embodiment, the hydrogen window is characterized by a substantial absence of plating from the external surfaces of the cover the base. The hydrogen diffusion port is selected from the group of materials consisting of palladium and its alloys, platinum and its alloys and titanium and its alloys The cover is welded to the base, and the hydrogen diffusion port is affixed to an aperture in the cover. The port is affixed by a low temperature process that can be accomplished after the cover is attached to the base to form a housing and the housing is degassed, without compromising the electronics within the housing and that does not require a partial pressure of hydrogen (which may be reintroduced into the materials) to accomplish, such as by soldering the diffusion port into the cover aperture, or by swaging the diffusion port into the cover aperture.

Abstract: A method for reducing occurrences of loose gettering material particles within micro-electromechanical system (MEMS) devices is described. The MEMS devices include a micro-machine within a substantially sealed cavity formed by a housing and a cover for the housing. The cavity containing a getter mounted on a getter substrate which is to be attached to the cover. The method includes providing an area between a portion of the cover and a portion of the getter substrate, positioning the getter within the area, and attaching the getter substrate to the cover.

Abstract: The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and discrete deposits of gas absorbing or contaminant removing material on the base by a variety of techniques and a layer for temporary protection of the contaminant removing material on top of the contaminant removing material. Passages are created in the layer which expose the contaminant removing material to atmosphere. The device may be used as a covering for the microdevice as well.

Abstract: Manufacturable processes and the resultant structures utilize metal hydride as an internal source of hydrogen to enhance heat removal within semiconductor packages that employ low dielectric constant materials. The use of a metal hydride heated by internal or external sources facilitates pressurizing hydrogen gas or hydrogen-helium gas mixtures within a hermetically-sealed package. The configuration of the metal hydride can include, where needed to generate the pressure required in larger packages, a relatively large area of metal hydride material on at least one or a plurality of hydrogen generation-dedicated chips. Alternatively, the configuration can include at least one or a plurality of relatively small “islands” of metal hydride material on each of at least one or a plurality of integrated circuit-bearing chips.

Abstract: A dual panel type organic electroluminescent device includes first and second substrates bonded together by a seal pattern, the first and second substrates including a plurality of sub-pixel regions, a plurality of array elements including a plurality of thin film transistors on the first substrate, a plurality of organic electroluminescent diodes on the second substrate, each of the organic electroluminescent diodes having a first electrode on a rear surface of the second substrate, an organic electroluminescent layer on a rear surface of the first electrode, a second electrode on a rear surface of the organic electroluminescent layer that corresponds to respective ones of the sub-pixel regions, a plurality of connecting electrodes connected to the thin film transistors over the first substrate, a plurality of electrical connecting patterns formed on each of the connecting electrodes, each of the electrical connecting patterns electrically interconnecting each of the thin film transistors to one of the organ

Abstract: A sealing substrate is disposed opposite an EL substrate. A frame in the peripheral portion of the sealing substrate is connected to the peripheral portion of the EL substrate to seal off an inner space. A desiccant (moisture absorbent) is provided on the inner space of the sealing substrate. Further, the thickness of the desiccant is smaller in a region distant from the frame (near the center of the substrate) than in a region near the frame, thereby preventing contact between the desiccant and the EL substrate.

Abstract: A single substrate hydrogen and microwave absorber (20) attenuates spurious microwave signals in a metal Integrated Microwave Assembly (10, 10?) and reduces hydrogen poisoning of hydrogen sensitive components implemented in the Integrated Microwave Assembly (10, 10?). The single substrate hydrogen and microwave absorber (20) includes a titanium substrate (30) with channels (32) spaced apart from one another by a predetermined distance. A layer of microwave absorbing material (34) is formed on portions (35) of the titanium substrate (30) between the channels (32), and a layer of hydrogen getting material (36) is formed in the channels (32) of the titanium substrate (30).

Abstract: The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, temporary protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof.

Abstract: A frame structure for a T/R tile module configured to transmit and receive electromagnetic radiation over a predetermined portion of the electromagnetic spectrum is provided. The frame component comprises at least one frame component formed as a single piece from a synthetic resin dielectric material. The frame component is configured to support a plurality of electrical connectors, and has a thin film coating configured to provide a ground connection and electromagnetic shield when the frame structure is incorporated into a transmit/receive module. A portion of the frame component is configured to interface with a portion of a T/R module when the frame component is incorporated into the T/R module, and the synthetic resin dielectric material provides the frame component with a range of compressibility that enables the frame component to provide the module with an effective ground connection over that range of compressibility.

Abstract: A thin film hydrogen getter and EMI shielding are provided for protecting GaAs circuitry sealed in an hermetic package. The thin film getter comprises a multilayer metal film that is deposited by vacuum evaporation techniques onto a conductive metal, such as aluminum or copper, that serves as the EMI shielding. The conductive layer is first formed on an interior surface. The multilayer hydrogen getter film comprises (1) a titanium film and (2) a palladium film that is deposited on the titanium film. Both the titanium and the palladium are deposited during the same coating process run, thereby preventing the titanium from being oxidized. The palladium continues to prevent the titanium from being oxidized once the getter is exposed to the atmosphere. However, hydrogen is easily able to diffuse through the palladium into the titanium where it is chemically bound up, since palladium is highly permeable to hydrogen.

Abstract: A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Abstract: A method for reducing occurrences of loose gettering material particles within micro-electromechanical system (MEMS) devices is described. The MEMS devices include a micro-machine within a substantially sealed cavity formed by a housing and a cover for the housing. The cavity containing a getter mounted on a getter substrate which is to be attached to the cover. The method includes providing an area between a portion of the cover and a portion of the getter substrate, positioning the getter within the area, and attaching the getter substrate to the cover.

Abstract: A semiconductor device, in which the air within a gel resin can be efficiently and well purged, comprising a casing, a semiconductor device electrically connected by bonding wires and a gel resin filled in the casing and serves for insulation covering of the semiconductor device and the bonding wire. The device further comprises a board-shaped vibration damper in contact with the gel resin and is provided with a plurality of perforations each having an air inlet and an air outlet for the purpose of air extraction during the filling of the gel resin. The sectional area of the perforations is tapered and larger at the inlet than at the outlet, thus causing the perforations to have the form of a substantially conical trapezoid as a whole.

Abstract: On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of photolithography so as to cover the semiconductor device-forming region. Then, an impurities-removing layer is formed by means of well known technique so as to cover the mask layer and embed the gaps between the adjacent masks of the mask layer. The impurities of the silicon layer of the SOI wafer are absorbed and removed by the distorted layer, the grain boundaries and the lattice defects of the impurities-removing layer.

Abstract: The integrated electromechanical microstructure comprises a base substrate and a cavity closed by a protective cover. Means for adjusting the pressure in the cavity after the protective cover has been sealed comprise at least one element made of pyrotechnic material combustion whereof releases gas into the cavity. The pressure in the cavity can thus be adjusted independently from the sealing process. Selective ignition of the elements made of pyrotechnic material can be achieved by heating electrical resistors or by laser beams coming from outside the microstructure and directed selectively towards the elements made of pyrotechnic material through a transparent zone of the protective cover.

Abstract: A getter for use in a sealed enclosure in the form of a porous body formed from particles of a FAU zeolite having a silica to alumina molar ratio below 10 and particles of a high silica to alumina molar ratio zeolite, having a silica to alumina molar ratio of at least 20, bound together with an inorganic binder. The high silica to alumina zeolite is preferably de-aluminated zeolite FAU or *BEA.

Abstract: A semiconductor device comprising integrated circuit elements realized by means of a stack of layers of semiconductor materials provided on a substrate of semiconductor material and comprising means for preventing the pollution of the circuit elements and of the substrate by hydrogen originating from their environment is characterized in that said means are formed by a layer of a material which absorbs hydrogen (or hydrogen getter) (10), which forms a pattern which is integrated with the circuit elements and whose outer surface (11) is exposed and in contact with the environment. This device, of the MMIC type, forms part of a module of a spatial or terrestrial telecommunication system.

Abstract: In a semiconductor pressure sensor device comprising a housing (1) having a cavity (3), a semiconductor sensor chip (2) mounted within the cavity, leads (4) for conveying pressure detection signals, and bonding wires (6) electrically connecting the sensor chip and the leads, a sensitive portion (2a) of sensor chip (2), leads (4) and bonding wires (6) are covered with an electrically insulating fluorochemical gel material which has a penetration of 30-60 according to JIS K2220, a Tg of up to −45° C., and a degree of saturation swelling in gasoline at 23° C. of up to 7% by weight. The sensor device is improved in operation reliability and durability life.

Abstract: There is provided a semiconductor device including (a) a package comprised of a base, a sidewall standing on the base at a periphery of the base, and a cover mounted over the sidewall, the base, sidewall and cover defining a closed adiabatic space in the package, (b) a first semiconductor chip mounted on the base in the close adiabatic space, and (c) a second semiconductor chip mounted on the cover. The semiconductor device makes it possible to prevent heat generated in an upper semiconductor chip from being transferred to a lower semiconductor chip, and more highly integrate semiconductor chips than a conventional one.

Abstract: A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Abstract: A raised portion 12 is formed on a substrate 10. The raised portion consists of a raised support pattern that preferably includes a wiring pattern. A sheet 30 is supported by the top surfaces of the raised support pattern such that the sheet is maintained apart from the base surface of the substrate 10. A semiconductor die 40 is adhered onto the sheet 30 using an adhesive agent 42. A sealant is used to create a sealed portion 50 that seals the semiconductor die 40 on the sheet 30. The sheet 30 has gas permeable region at least at a location accessible by the adhesive agent.