Abstract: Packaged semiconductor devices including high-thermal conductivity molding compounds and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution structure; a first die over and electrically coupled to the first redistribution structure; a first through via over and electrically coupled to the first redistribution structure; an insulation layer extending along the first redistribution structure, the first die, and the first through via; and an encapsulant over the insulation layer, the encapsulant surrounding portions of the first through via and the first die, the encapsulant including conductive fillers at a concentration ranging from 70% to about 95% by volume.

Abstract: A semiconductor package includes a redistribution structure, a first conductive pillar and a second conductive pillar, and a semiconductor device. The redistribution structure has a first surface and a second surface opposite to the first surface. The first conductive pillar and the second conductive pillar are disposed on the first surface of the redistribution structure and electrically connected with the redistribution structure, wherein a maximum lateral dimension of the first conductive pillar is greater than a maximum lateral dimension of the second conductive pillar, and a topography variation of a top surface of the first conductive pillar is greater than a topography variation of a top surface of the second conductive pillar.

Abstract: A method of forming a semiconductor device is provided. The method includes placing a semiconductor die and routing structure on a carrier substrate. At least a portion of the semiconductor die and routing structure are encapsulated with an encapsulant. A cavity formed in the encapsulant. A top portion of the routing structure is exposed through the cavity. A conductive trace is formed to interconnect the semiconductor die with the routing structure.

Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.

Abstract: An electronic apparatus includes an integrated circuit board on, over, or in which a USB circuit block is provided; a first USB interface; a second USB interface; a printed circuit board on which a source clock circuit configured to output a source clock is provided; and a ball grid array that includes first, second, and third ball grids for electric coupling between the integrated circuit board and the printed circuit board. The first ball grid electrically couples the USB circuit block and the first USB interface to each other. The second ball grid electrically couples the USB circuit block and the second USB interface to each other. The third ball grid electrically couples the source clock circuit and the USB circuit block to each other. The third ball grid is located between the first ball grid and the second ball grid.

Abstract: The present application provides a semiconductor structure and a forming method thereof. The method of forming the semiconductor structure includes: providing a semiconductor chip and a substrate; forming, on the substrate, a first covering film covering a metal pad and a surface of the substrate, a plurality of up-narrow and down-wide openings being formed in the first covering film, and a bottom of each of the up-narrow and down-wide openings correspondingly exposing a surface of the metal pad; and flipping the semiconductor chip onto the substrate, such that a solder bump on a metal pillar is correspondingly located in the up-narrow and down-wide opening, and the solder bump fill the up-narrow and down-wide opening.

Abstract: A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Abstract: Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

Abstract: The present disclosure provides a power conversion module including a magnetic component and a power device layer. The magnetic component includes a main body layer, a first magnetic core, a second magnetic core and a conductor. The main body layer includes a first surface and a second surface opposite to each other. The first magnetic core is embedded in the main body layer and adjacent to the first surface. The second magnetic core is embedded in the main body layer and adjacent to the second surface. The first magnetic core and the second magnetic core are connected to form plural magnetic columns. The conductor is embedded between the first surface and the second surface. The conductor is partially disposed between the plural magnetic columns. The power device layer is disposed on the first surface. The power device layer includes a power device electrically connected to conductor.

Abstract: A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.

Abstract: A multi-pin wafer level chip scale package is achieved. One or more solder pillars and one or more solder blocks are formed on a silicon wafer wherein the one or more solder pillars and the one or more solder blocks all have a top surface in a same horizontal plane. A pillar metal layer underlies the one or more solder pillars and electrically contacts the one or more solder pillars with the silicon wafer through an opening in a polymer layer over a passivation layer. A block metal layer underlies the one or more solder blocks and electrically contacts the one or more solder pillars with the silicon wafer through a plurality of via openings through the polymer layer over the passivation layer wherein the block metal layer is thicker than the pillar metal layer.

Abstract: A package structure includes an insulating encapsulation, a semiconductor die, and a redistribution circuit structure. The semiconductor die is encapsulated in the insulating encapsulation. The redistribution circuit structure includes conductive patterns, wherein the conductive patterns each comprise a first portion, at least one second portion, and at least one connecting portion. A first edge of the at least one connecting portion is connected to the first portion, and a second edge of the at least one connecting portion is connected to the at least one second portion, wherein the first edge is opposite to the second edge, and a length of the first edge is greater than a length of the second edge.

Abstract: A foundation portion and a conductive base portion disposed on the foundation portion are formed on a temporary support, a semiconductor element electrically connected to the base portion is disposed on a side of the temporary support on which the foundation portion and the base portion are formed, and an insulating layer coming into a state of burying the foundation portion, the base portion, and the semiconductor element is formed on the temporary support. Subsequently, surfaces of the foundation portion and the insulating layer on a side of the temporary support are exposed by removing the temporary support, and the exposed foundation portion is further removed, thereby disposing the base portion in a state of being more recessed than the surface of the insulating layer. An external connection terminal is formed on the exposed base portion to manufacture the semiconductor package.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.

Abstract: A semiconductor package includes: a redistribution substrate including a lower insulating layer, a redistribution via penetrating through the lower insulating layer, a redistribution layer connected to the redistribution via on the lower insulating layer, and an upper insulating layer on the lower insulating layer and having a first surface and a second surface opposing the first surface; a pad structure including a pad portion, disposed on the first surface of the redistribution substrate, and a via portion penetrating through the upper insulating layer to connect the redistribution layer and the pad portion to each other; a semiconductor chip disposed on the first surface of the redistribution substrate and including a pad; and a connection member in contact with the pad portion and the pad of the semiconductor chip between the pad structure and the pad of the semiconductor chip.

Abstract: Provided is a package structure and an antenna structure. The package structure includes a die; a first encapsulant, laterally encapsulating the die; a first redistribution structure, disposed on the first encapsulant and the die; a second encapsulant, disposed on the first redistribution structure; an antenna pattern, embedded in the second encapsulant and electrically connected to the first redistribution structure; and a dielectric layer, covering the antenna pattern, wherein an upper surface of the second encapsulant is exposed by the dielectric layer, and a laser mark is formed within the upper surface of the second encapsulant.

Abstract: Various embodiments relate to a semiconductor package. The semiconductor package includes a first die. The first die includes a first bridge interconnect region. The semiconductor package further includes a second die. The second die includes a second bridge interconnect region. The semiconductor package includes a bridge die. The bridge die includes a first contact area to connect to the first bridge interconnect region and a second contact area to connect to the second bridge interconnect region. In the semiconductor package, the first bridge interconnect region is larger than the second bridge interconnect region. Additionally, each of the first bridge interconnect region and the second bridge interconnect region include a plurality of conductive bumps. An average pitch between adjacent bumps of the first bridge interconnect region is larger than an average pitch between adjacent bumps of the second bridge interconnect region.

Abstract: A method includes placing an electronic device on a pliable mating surface on a major surface of a mold such that at least one contact pad on the electronic device presses against the pliable mating surface. The pliable mating surface is on a microstructure in an arrangement of microstructures on the major surface of the mold. A liquid encapsulant material is applied over the electronic device and the major surface of the mold, and then hardened to form a carrier for the electronic device. The mold and the carrier are separated such that the microstructures on the mold form a corresponding arrangement of microchannels in the carrier, and at least one contact pad on the electronic device is exposed in a microchannel in the arrangement of microchannels. A conductive particle-containing liquid is deposited in the microchannel, which directly contacts the contact pad exposed in the microchannel.

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an insulating layer, and first, second, and third redistribution patterns disposed in the insulating layer. The first to third redistribution patterns are sequentially stacked in an upward direction and are electrically connected to each other. Each of the first to third redistribution patterns includes a wire portion that extends parallel to the top surface of the redistribution substrate. Each of the first and third redistribution patterns further includes a via portion that extends from the wire portion in a direction perpendicular to the top surface of the redistribution substrate. The second redistribution pattern furthers include first fine wire patterns that are less wide than the wire portion of the second redistribution pattern.

Abstract: An interconnect for a semiconductor device includes a laminate substrate; a first plurality of electrical devices in or on a surface of the laminate substrate; a redistribution layer having a surface disposed on the surface of the laminate substrate; a second plurality of electrical devices in or on the surface of the redistribution layer; and a plurality of transmission lines between the first plurality of electrical devices and the second plurality of electrical devices. The surface of the laminate substrate and the surface of the redistribution layer are parallel to each other to form a dielectric structure and a conductor structure.

Abstract: In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

Abstract: A package structure including a first radio frequency die, a second radio frequency die, an insulating encapsulant, a redistribution circuit structure, a first oscillation cavity and a second oscillation cavity is provided. A first frequency range of the first radio frequency die is different from a second frequency range of the second radio frequency die. The insulating encapsulant laterally encapsulates the first radio frequency die and the second radio frequency die. The redistribution circuit structure is disposed on the first radio frequency die, the second die and the insulating encapsulant. The first oscillation cavity is electrically connected to the first radio frequency die, and the second oscillation cavity is electrically connected to the second radio frequency die.

Abstract: A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

Abstract: An electronic package, a semiconductor package structure and a method for manufacturing the same are provided. The electronic package includes a carrier, a first electronic component, an electrical extension structure, and an encapsulant. The carrier has a first face and a second face opposite to the first face. The first electronic component is adjacent to the first face of the carrier. The electrical extension structure is adjacent to the first face of the carrier and defines a space with the carrier for accommodating the first electronic component, the electrical extension structure is configured to connect the carrier with an external electronic component. The encapsulant encapsulates the first electronic component and at least a portion of the electrical extension structure.

Abstract: A method of forming semiconductor structure includes attaching backsides of top dies to a front side of a bottom wafer, the bottom wafer comprising a plurality of bottom dies; forming first conductive pillars on the front side of the bottom wafer adjacent to the top dies; forming a first dielectric material on the front side of the bottom wafer around the top dies and around the first conductive pillars; and dicing the bottom wafer to form a plurality of structures, each of the plurality of structures comprising at least one of the top dies and at least one of the bottom dies.

Abstract: A semiconductor module includes a module substrate, a semiconductor package mounted on the module substrate, a first bonding wire connecting the module substrate to the semiconductor package, and a first molding member covering the first bonding wire. The semiconductor package includes a package substrate, a semiconductor chip mounted on the package substrate, a second bonding wire connecting the package substrate to the semiconductor chip, and a second molding member covering the semiconductor chip and the second bonding wire. The first and second bonding wires are each connected to one connection pad of the package substrate.

Abstract: Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.

Abstract: An array of complementary die sets is attached to a carrier substrate. A continuous complementary-level molding compound layer is formed around the array of complementary die sets. An array of primary semiconductor dies is attached to the array of complementary die sets. A continuous primary-level molding compound layer is formed around the array of primary semiconductor dies. The bonded assembly is diced by cutting along directions that are parallel to edges of the primary semiconductor dies. The sidewalls of the complementary dies are azimuthally tilted relative to sidewalls of the primary semiconductor dies, or major crystallographic directions of a single crystalline material in the carrier substrate are azimuthally tilted relative to sidewalls of the primary semiconductor dies.

Abstract: A semiconductor device includes an insulating layer, conductors, a semiconductor element and a sealing resin. The insulating layer has first and second surfaces opposite to each other in the thickness direction. Each conductor has an embedded part whose portion is embedded in the insulating layer and a redistribution part disposed at the second surface and connected to the embedded part. The semiconductor element has electrodes provided near the first surface and connected the embedded parts of the conductors. The semiconductor element is in contact with the first surface. The sealing resin partially covers the semiconductor element and is in contact with the first surface. The redistribution parts include portions outside the semiconductor element as viewed in the thickness direction. The insulating layer has grooves recessed from the second surface in the thickness direction. The redistribution parts are in contact with the grooves.

Abstract: A semiconductor package includes a core substrate having a through hole, a first molding member at least partially filling the through hole and covering an upper surface of the core substrate, the first molding member having a cavity within the through hole, a first semiconductor chip on the first molding member on the upper surface of the core substrate, a second semiconductor chip arranged within the cavity, a second molding member on the first molding member and covering the first semiconductor chip, a third molding member filling the cavity and covering the lower surface of the core substrate; first redistribution wirings on the second molding member and electrically connecting first chip pads of the first semiconductor chip and core connection wirings of the core substrate; and second redistribution wirings on the third molding member and electrically connecting second chip pads of the second semiconductor chip and the core connection wirings.

Abstract: A device comprising a first substrate comprising a first plurality of pillar interconnects; a second substrate comprising a second plurality of pillar interconnects, wherein the second plurality of pillar interconnects is coupled to the first plurality of pillar interconnects through a plurality of solder interconnects; a passive component located between the first substrate and the second substrate; and an integrated device coupled to the first substrate.

Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.

Abstract: An electronic module includes a first semiconductor device disposed on a first main surface of an insulating board of a printed wiring board, a first capacitor disposed on a second main surface of the insulating board at a position that overlaps with the first semiconductor device when viewed in a direction perpendicular to the first main surface, and a second capacitor disposed on the second main surface of the insulating board at a position that overlaps with the first semiconductor device when viewed in the direction perpendicular to the first main surface. A second electrode of the first capacitor is electrically connected to a ground pattern via a first ground via of the printed wiring board. A fourth electrode of the second capacitor is electrically connected to the ground pattern via a second ground via of the printed wiring board.

Abstract: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate including a dielectric material having a first surface and an opposing second surface, a first photodefinable material on at least a portion of the second surface, and a second photodefinable material on at least a portion of the first photodefinable material, wherein the second photodefinable material has a different material composition than the first photodefinable material.

Abstract: In one example, a semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of the redistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosed herein.

Abstract: The present application discloses a semiconductor device with an interface structure and a method for fabricating the interface structure. The interface structure includes an interface board configured to be fixed onto and electrically coupled to a chuck of a testing equipment, and a first object positioned on a first surface of the interface board and electrically coupled to the interface board. The first object is configured to be analyzed by the testing equipment.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: A semiconductor package includes: a first substrate; a semiconductor chip mounted on the first substrate such that a circuit formation surface is oriented toward the first substrate; a second substrate arranged above the first substrate, the semiconductor chip being sandwiched between the first substrate and the second substrate; and a resin that seals the semiconductor chip and that is filled between the first substrate and the second substrate, wherein the second substrate includes a solder resist layer having a first surface facing a back surface that is an opposite surface of the circuit formation surface of the semiconductor chip, and wherein on an area of the first surface of the solder resist layer facing the back surface of the semiconductor chip, at least one protruding portion that protrudes towards the back surface of the semiconductor chip is provided.

Abstract: Provided is a die extraction method, comprising the following steps: removing solder balls; polishing a front side of the sample to remove a part on a front side of the target die, and retain a part of a die attach film (DAF) layer on the front side of the target die and a bonding wire located in the part; attaching the front side of the sample to the polishing jig and flattening the sample and the polishing jig by the flattener; polishing the back side of the sample to remove a part on a back side of the target die, and retain a DAF layer on the back side of the target die; removing the DAF and a packaging material remaining on the sample to obtain the target die; and attaching the back side of the target die to a glass slide, thus completing extraction of the target die.

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

Abstract: A semiconductor package comprising plurality of bumps and fabricating method thereof. The package has a chip, a plurality of first and second bumps, an encapsulation, a redistribution. The chip has a plurality of pads and an active area and the active surface has a first area and a second area surrounding the first, the pads formed on a first area of the active surface, each first bump formed on the corresponding pad. The second bumps are formed on the second area, each second bump has first and second different width layers. The encapsulation encapsulates the chip and bumps and is ground to expose the bumps therefrom. During grinding, all of the first bumps are completely exposed by determining a width of an exposed surface of the second bump to electrically connect to the redistribution is increased. Therefore, a shallow-grinding or over-grinding does not occur.

Abstract: A stacked semiconductor package has a substrate, a first chip, at least one spacer, a second chip and an encapsulation. The first chip and the second chip are intersecting stacked on the substrate. The at least one spacer is stacked on the substrate to support the second chip. The encapsulation is formed to encapsulate the substrate, the first chip, the at least one spacer and the second chip. The at least one spacer is made of the material of the encapsulation. Therefore, the adhesion between the at least one spacer and the encapsulation is enhanced to avoid the delamination during the reliability test and enhances the reliability of the stacked semiconductor package.

Abstract: A multi-stacked package-on-package structure includes a method. The method includes: adhering a first die and a plurality of second dies to a substrate, the first die having a different function from each of the plurality of second dies; attaching a passive device over the first die; encapsulating the first die, the plurality of second dies, and the passive device; and forming a first redistribution structure over the passive device, the first die, and the plurality of second dies, the passive device connecting the first die to the first redistribution structure.

Abstract: A wiring substrate includes a substrate body composed of a plurality of ceramic layers (insulating materials) and having a front surface and a back surface located on opposite sides thereof and having a side surface located between the front surface and the back surface. The outline of the substrate body in a plan view which is a view from the front surface side is composed of a plurality of curved portions separated from one another and a plurality of straight portions each located between adjacent ones of the curved portions. The total length of the curved portions in the plan view is at least 40% of the sum of the total length of the curved portions and the total length of the straight portions.

Abstract: A substrate structure and a semiconductor package structure are provided. The substrate structure includes a first dielectric layer, a pad and a conductive structure. The first dielectric layer has a first surface and a second surface opposite to the first surface. The pad is adjacent to the first surface and at least partially embedded in the first dielectric layer. The first dielectric layer has an opening exposing the pad, and a width of the opening is less than a width of the pad. The conductive structure is disposed on the pad and composed of a first portion outside the opening of the first dielectric layer and a second portion embedded in the opening of the first dielectric layer. The first portion has an aspect ratio exceeding 1.375.

Abstract: A system and method. The system may include an integrated circuit (IC) die. The IC die may have two faces and sides. The system may further include mold material. The mold material may surround at least the sides of the IC die. The IC die may be mechanically interlocked with the mold material.

Abstract: A power semiconductor module includes: at least one semiconductor substrate having a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer; at least one semiconductor body arranged on the first metallization layer; at least one end stop element arranged either on the semiconductor substrate or on one of the at least one semiconductor body and extending from the semiconductor substrate or the respective semiconductor body in a vertical direction that is perpendicular to a top surface of the semiconductor substrate; and a housing at least partly enclosing the semiconductor substrate, the housing including sidewalls and a cover. The housing further includes at least one press-on pin extending from the cover of the housing towards one of the at least one end stop element, and exerting a pressure on the respective end stop element.

Abstract: A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

Abstract: A hybrid bonding structure includes a first conductive structure and a second conductive structure. The first conductive structure includes a first conductive layer. A first barrier surrounds the first conductive layer. A first air gap surrounds and contacts the first barrier. A first dielectric layer surrounds and contacts the first air gap. The second conductive structure includes a second conductive layer. A second barrier contacts the second conductive layer. A second dielectric layer surrounds the second barrier. The second conductive layer bonds to the first conductive layer. The first dielectric layer bonds to the second dielectric layer.