With Textured Surface Patents (Class 257/739)
  • Semiconductor device including an oblique surface and an electrode crossing the oblique surface
    Patent number: 5231302
    Abstract: A semiconductor device is made by etching a III-V compound semiconductor layer having a (100) surface using a mask having an opening defined by edges including at least one edge along an [011] direction of the layer so that the surface revealed by etching has a (111) orientation. An electrode is formed on the (111) surface by vacuum vapor deposition.
    Type: Grant
    Filed: November 15, 1991
    Date of Patent: July 27, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Misao Hironaka