Abstract: An embedded structure of circuit board is provided. The embedded structure includes a substrate, a first patterned conductive layer disposed on the substrate and selectively exposing the substrate, a first dielectric layer covering the first patterned conductive layer and the substrate, a pad opening disposed in the first dielectric layer, and a via disposed in the pad opening and exposing the first patterned conductive layer, wherein the outer surface of the first dielectric layer has a substantially even surface.

Abstract: The invention refers to method for packaging an integrated circuit (IC) comprising steps of: attaching at least one die on a substrate; attaching bond-wires from the die(s) to package terminal pads; mold or dispense a thermo-degradable material on the substrate, die(s) and bond-wires; mold an encapsulant material; decompose the thermo-degradable materials by temperature treatment.

Abstract: Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3, an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

Abstract: A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead having a lead bottom side and a lead top side; applying a passivation over the lead with the lead top side exposed from the passivation; forming an interconnect structure directly on the passivation and the lead top side, the interconnect structure having an inner pad and an outer pad with a recess above the lead top side; mounting an integrated circuit over the inner pad and the passivation; and molding an encapsulation over the integrated circuit.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an array of leads having a jumper lead and a covered contact; coupling an insulated bonding wire between the jumper lead and the covered contact; attaching an integrated circuit die over the covered contact; and coupling a bond wire between the integrated circuit die and the jumper lead including coupling the integrated circuit die to the covered contact through the insulated bonding wire.

Abstract: A semiconductor chip (101) with bond pads (110) on a substrate (103) with rows and columns of regularly pitched metal contact pads (131). A zone comprises a first pair (131a, 131b) and a parallel second pair (131c, 131d) of contact pads, and a single contact pad (131e) for ground potential; staggered pairs of stitch pads (133) connected to respective pairs of adjacent contact pads by parallel and equal-length traces (132a, 132b, etc.). Parallel and equal-length bonding wires (120a, 120b, etc.) connect bond pad pairs to stitch pad pairs, forming differential pairs of parallel and equal-length conductor lines. Two differential pairs in parallel and symmetrical position form a transmitter/receiver cell for conducting high-frequency signals.

Abstract: To provide: a technique capable of suppressing a titanium nitride film that is exposed at the side surface of an opening from turning into a titanium oxide film even when water permeates the opening over a pad from outside a semiconductor device and thus improving the reliability of the semiconductor device; and a technique capable of suppressing a crack from occurring in a surface protective film of a pad and improving the reliability of a semiconductor device. An opening is formed so that the diameter of the opening is smaller than the diameter of another opening and the opening is included in the other opening. Due to this, it is possible to cover the side surface of an antireflection film that is exposed at the side surface of the other opening with a surface protective film in which the opening is formed. As a result of this, it is possible to form a pad without exposing the side surface of the antireflection film.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A microelectronic assembly can include a microelectronic device, e.g., semiconductor chip, connected together with an interconnection element, e.g., substrate, the latter having signal contacts and reference contacts. The reference contacts can be connectable to a source of reference potential such as ground or a voltage source other than ground such as a voltage source used for power. Signal conductors, e.g., signal wirebonds can be connected to device contacts exposed at a surface of the microelectronic device. Reference conductors, e.g., reference wirebonds can be provided, at least one of which can be connected with two reference contacts of the interconnection element. The reference wirebond can have a run which extends at an at least substantially uniform spacing from a signal conductor, e.g., signal wirebond that is connected to the microelectronic device over at least a substantial portion of the length of the signal conductor.

Abstract: A semiconductor unit of certain aspects of the invention includes electrically conductive plates in the shape of the letter L, each consisting of a horizontally disposed leg portion and a vertically disposed flat body portion that is perpendicular to a cooling plate adhered to the bottom of the semiconductor unit. A pair of the vertically disposed flat body portions sandwiches a semiconductor chip. Owing to this construction, the heat generated in the semiconductor chip can be conducted away through the both surfaces of the chip, thus improving cooling performance. Since the heat is conducted away through the leg portions of the L-shaped electrically conductive plates a projected planar area occupied by the cooling plate required for cooling the semiconductor unit is reduced. Therefore, the size of the semiconductor unit can be reduced.

Abstract: A method (90) entails placing (124) sensor elements (122) in an array (126) arranged to correspond with locations of controller dies (24) in a controller wafer (94) and encapsulating (128) the array (126) in a mold material (74) to form a panel (130) of the sensor elements (122). The sensor elements (122) include bond pads (42) that are concealed by a material section (116, 118) of the sensor elements (122). The controller wafer (94) is bonded (134) to the panel (130) to form a stacked wafer structure (136). After bonding, methodology (90) entails forming (140) conductive elements (60) on the controller wafer (95), removing material sections (100) from the controller wafer (94) and removing the material sections (116, 118) from the sensor elements (122) to expose the bond pads (42), forming (148) electrical interconnects (56), applying (152) packaging material (64), and singulating to produce sensor packages (20, 76).

Abstract: Aspects of the invention provide an internal wiring structure of a power semiconductor device, which is capable of reducing a mutual inductance between two wiring conductors and improving the heat dissipation effect, the two wiring conductors being disposed so as to oppose each other and having currents flowing in the same direction. In some aspects, notches can be formed alternately from side walls of two flat plates, on the flat plates, to obtain two wiring conductors. The two wiring conductors can be disposed so as to oppose each other and in parallel to each other so that currents flow along the notches in directions opposite to each other. Accordingly, in some circumstances, the mutual inductance can be reduced. Further, in some circumstances, the dimensions of the planes of the wiring conductors obtained by forming the notches can be increased to improve the heat dissipation.

Abstract: A semiconductor device includes a core substrate, and at least one insulating layer and at least one wiring layer that are disposed on a first surface and a second, opposite surface of the substrate. The semiconductor device includes a via disposed in the insulating layer and in the core substrate, and which connects the wiring layers to one another. The semiconductor device includes a semiconductor element mounted on the first surface, forming an electrode terminal that faces up. The semiconductor device includes a connecting portion that penetrates the insulating layer and directly connects the electrode terminal of the semiconductor element and the wiring layer on the first surface. A minimum wiring pitch of this wiring that of any wiring layer on the second surface.

Abstract: There is a highly reliable semiconductor module having a satisfactory bonding strength in the electrical bonded portion. In the semiconductor module 10, a semiconductor chip 11 is mounted on a circuit board 20. In the circuit board 20, on an insulating ceramic substrate 21 is formed a metal circuit plate 22 on which the semiconductor chip 11 is implemented. The semiconductor chip 11 and metal circuit plate 22 are connected with each other by an aluminum bonding wire 23. In the connected portion between the metal circuit plate 22 and bonding wire 23, a coating layer 24 for excellent conjunction therebetween is mounted. The coating layer 24, as shown in an enlarged diagram, is made up of a nickel (Ni) layer 241, a P-distributed palladium (Pd) layer 242, and an Au layer 243 in increasing order. To the P-distributed Pd layer 242 is added P (phosphorous) and, the P concentration on the Ni layer 241 is higher than that on the Au layer side 243.

Abstract: A semiconductor device includes a wiring board having connection pads thereon and a semiconductor chip mounted on the wiring board. The wiring board and the semiconductor chip are covered with a sealing portion. Conductive members are extended upward from the connection pads and are exposed from the sealing portion. Rewiring lines are connected to the exposed conductive members. Land portions are arranged on the sealing portion and are electrically connected to the conductive members through the rewiring lines.

Abstract: A semiconductor device, includes: a wiring substrate, a stacked body mounted on the wiring substrate, an underfill layer filled into gaps between respective semiconductor chips of the stacked body; and a molding body made up of a molding resin covered and formed at outside of the stacked body and so on. The underfill layer is made up of a cured product of a resin material containing an amine-based curing agent, and the cured product has a Tg of 65° C. or more and 100° C. or less.

Abstract: An electronic device package is disclosed. The package includes at least one semiconductor chip having a first surface and a second surface opposite thereto, in which at least one redistribution layer is disposed on the first surface of the semiconductor chip and is electrically connected to at least one conductive pad structure. At least one abut portion is disposed on the redistribution layer and electrically contacting thereto. A passivation layer covers the first surface of the semiconductor chip and surrounds the abut portion. A substrate is attached onto the second surface of the semiconductor chip. A fabrication method of the electronic device package is also disclosed.

Abstract: A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 ?m. A plurality of traces is formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.

Abstract: A microelectronic assembly includes units superposed on one another to form at least one stack having a vertical direction. Each unit includes one or more microelectronic devices and has top and bottom surfaces. Top unit terminals are exposed at the top surfaces and bottom unit terminals are exposed at the bottom surfaces. The top and bottom unit terminals are provided at a set of ordered column positions. Each top unit terminal of the set, except the top unit terminals at the highest ordered column position, is connected to a respective bottom unit terminal of the same unit at a next higher ordered column position. Each bottom unit terminal of the set, except the bottom unit terminals of the lowest unit in the stack, is connected to a respective upper unit terminal of the next lower unit in the stack at the same column position.

Abstract: In one embodiment, the light emitting device package includes a package body, electrodes attached to the package body, and at least two light emitting devices electrically connected to the electrodes. Each light emitting device emits light of a different color from the other light emitting devices. A protective layer is formed over the at least two light emitting devices, and a phosphor layer formed over the protective layer. Other embodiments include other structures such a individual phosphor layers on each light emitting device. And, a light apparatus including a package may include a single driver driving the light emitting devices of the package.

Abstract: An interconnect assembly that operates in environments well exceeding 200° C. without degradation and/or failure. The interconnect assembly of the present invention eliminates the incompatible metal interfaces of the prior art and relies on aluminum first-metal wire to electrically connect to first-metal pads on a chip and a second-metal wire to electrically connect to second-metal plated contacts on a package. Both wire types are then electrically connected together utilizing a high temperature transition pad disposed between the chip and contacts on the package, therefore eliminating incompatible metal interfaces of the prior art.

Abstract: A semiconductor device has a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, and a porous metal film disposed on the insulating film and having a void region containing voids and a void-free region that does not contain any voids. A protective film is disposed on the porous metal film and has an opening portion defining a pad region having a pad opening end. An interface between the void region and the void-free region of the porous metal film is disposed at one of the pad opening end and a position outside of the pad opening end. A wire is wire-bonded to the porous metal film in the pad region.

Abstract: An LED lamp (A1) includes a plurality of LEDs (2), a retainer (1) on which the light LEDs (2) are mounted, and a wiring pattern formed on the retainer (1) and electrically connected to the LEDs (2). The retainer (1) includes a plurality of substrates (11, 12, 15). Of the plurality of substrates (11, 12, 15), two adjacent substrates (11, 12) are connected to each other by a pair of bendable connection members (32a, 32b). The two substrates (11, 12) are arranged in such a manner that their normal line directions differ from each other.

Abstract: A flip chip interconnection structure is formed by mechanically interlocking joining surfaces of a first and second element. The first element, which may be a bump on an integrated circuit chip, includes a soft, deformable material with a low yield strength and high elongation to failure. The surface of the second element, which may for example be a substrate pad, is provided with asperities into which the first element deforms plastically under pressure to form the mechanical interlock.

Abstract: To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding material. With this, even when a first semiconductor chip as a large chip is mounted, wire bonding can be performed without causing the die bonding material to cover the bonding leads. Thus, development cost can be reduced to reduce the cost of the semiconductor device (LGA).

Abstract: A device including two mounting surfaces. One embodiment provides a power semiconductor chip and having a first electrode on a first surface and a second electrode on a second surface opposite to the first surface. A first external contact element and a second external contact element, are both electrically coupled to the first electrode of the semiconductor chip. A third external contact element and a fourth external contact element, both electrically coupled to the second electrode of the semiconductor chip. A first mounting surface is provided on which the first and third external contact elements are disposed. A second mounting surface is provided on which the second and fourth external contact elements are disposed.

Abstract: A semiconductor element (10) is secured to an island (7), and a plurality of through-holes (8) are formed in the portion of the island (7), which surrounds the area to which the semiconductor element (10) is secured. Further, the electrode pads of the semiconductor element (10) and leads (4) are electrically connected by copper wires (11). In this structure, the cost of materials is reduced by using the copper wires (11) in comparison with gold wires. Further, a part of a resin package (2) is embedded in through-holes (8), so that the island (7) can be easily supported within the resin package (2).

Abstract: A method for making an electronic device includes forming an interconnect layer stack on a rigid wafer substrate having a plurality of patterned electrical conductor layers, a dielectric layer between adjacent patterned electrical conductor layers, and at least one solder pad on an uppermost patterned electrical conductor layer. An LCP solder mask having at least one aperture therein alignable with the at least one solder pad is formed. The LCP solder mask and interconnect layer stack are aligned and laminated together. Solder is positioned in the at least one aperture. At least one circuit component is attached to the at least one solder pad using the solder.

Abstract: A high-frequency module includes first and second switch IC elements and a substrate. The first and second switch IC elements are the same or substantially the same IC chips, and are mounted in the same or substantially the same orientation. The first switch IC element is mounted on the substrate. The second switch IC element is mounted above the first switch IC element. Due to wire bonding, the individual pad electrodes of the first and second switch IC elements are connected to the land electrodes of the substrate, which are to be connected to the individual pad electrodes. Between a pad electrode and a land electrode connected to each other, another land electrode is not provided.

Abstract: Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads.

Abstract: A coreless pin-grid array (PGA) substrate includes PGA pins that are integral to the PGA substrate without the use of solder. A process of making the coreless PGA substrate integrates the PGA pins by forming a build-up layer upon the PGA pins such that vias make direct contact to pin heads of the PGA pins.

Abstract: A chip scale package has a semiconductor die having an array of die bond pads arranged with a bond pad density per unit area, embedded in a molded die support body having a surface supporting an array of conducting contacts, each of the contacts connected by an electrical lead to a corresponding one of the die bond pads.

Abstract: Some exemplary embodiments of a direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached to a top side of the paddle portion and is enclosed by said mold compound, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.

Abstract: In one embodiment, a device includes a first IC having a differential signal driver and a first isolation circuit configured to provide differential signals transmitted by the differential signal driver to a first pair of bond pads of the first IC. First and second bond wires are configured to provide differential signals from the first pair of bond pads to a second pair of bond pad included in a second IC. The second IC includes a second isolation circuit configured to provide differential signals from the second pair of bond pads to a differential receiver circuit of the second IC. The bond wires are specifically arranged such that a distance between the first and second bond wires varies by at least 10% as measured at two points along a length of the first bond wire.

Abstract: In a semiconductor device having multiple tiers of bond wires extending in a first direction, dummy insulated bond wires extend in a second direction orthogonal to the first direction and between the wire tiers to support the wires in an upper tier to prevent them from sagging and contacting wires in a lower tier.

Abstract: Electrode pads respectively have a probe region permitting probe contact and a non-probe region. In each of the electrode pads arranged zigzag in two or more rows, a lead interconnect for connecting another electrode pad with an internal circuit is not placed directly under the probe region but placed directly under the non-probe region.

Abstract: Disclosed are photo sensitizers that include a polyol moiety covalently bonded to a fused aromatic moiety. Also disclosed is a method for improving UV laser ablation performance of a coating, such as a cationic UV curable coating, by incorporating an oxalyl-containing additive into the cationic UV curable or other coating. Oxalyl-containing sensitizers having the formula Q-O—C(O)—C(O)—O—R1 wherein Q represents a fused aromatic moiety and R1 is an alkyl or aryl group, are also disclosed, as are oxalyl-containing oxetane resins, oxalyl-containing polyester polyols, and cationic UV curable coating formulations that include oxalyl-containing additives.

Abstract: One embodiment is a packaged device having multiple layers. Another embodiment is a method of forming a packaged device having multiple layers. Conductive layers and insulating layers can be formed with openings exposing semiconductor devices. The semiconductor devices can be wire-bonded to the conductive layers. In some embodiments, parasitic effects and a relative footprint of the packaged device can be reduced.

Abstract: One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad, a driver integrated circuit (IC) for driving the control and sync transistors, and conductive clips electrically coupling the top surfaces of the transistors to substrate pads such as leadframe pads. In this manner, the leadframe and the conductive clips provide efficient grounding or current conduction by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections.

Abstract: A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.

Abstract: To protect victim bondwires in a packaged electronic component from crosstalk induced by noisy aggressor bondwires, shielding bondwires are configured between the victim bondwires and the aggressor bondwires. The shielding bondwires, on either side of the victim bondwires, are connected to the same reference voltage on the package side of the component and to each other on the die side of the component, e.g., via a metal connection mounted on the die. As configured in one embodiment, the shielding bondwires and metal connection form a two-dimensional Faraday cage that shields the victim bondwires from crosstalk induced by the aggressor bondwires.

Abstract: An integrated circuit (IC) including a set of isolated wire structures disposed within a layer of the IC, methods of manufacturing the same and design structures are disclosed. The method includes forming adjacent wiring structures on a same level, with a space therebetween. The method further includes forming a capping layer over the adjacent wiring structures on the same level, including on a surface of a material between the adjacent wiring structures. The method further includes forming a photosensitive material over the capping layer. The method further includes forming an opening in the photosensitive material between the adjacent wiring structures to expose the capping layer. The method further includes removing the exposed capping layer.

Abstract: Galvanic isolation between a high-voltage die and a low-voltage die in a multi-die chip is provided by a galvanic isolation die that physically supports the high-voltage die and the low-voltage die, and provides capacitive structures with high breakdown voltages that allow the high-voltage die to capacitively communicate with the low-voltage die.

Abstract: An integrated circuit package system is provided including mounting a first integrated circuit device over a carrier, mounting a second integrated circuit device having an adhesive spacer over the first integrated circuit device in an offset configuration, connecting a first internal interconnect between the carrier and the first integrated circuit device with the first internal interconnect within the adhesive spacer, connecting a second internal interconnect between the carrier and the second integrated circuit device, and encapsulating the first integrated circuit device, the second integrated circuit device, the first internal interconnect and the second internal interconnect.

Abstract: An integrated circuit device including a substrate, a first internal bonding pad, a second internal bonding pad, an external bonding pad and a bonding wire is provided. A first circuit and a second circuit are embedded in the substrate. The first internal bonding pad is disposed on a surface of the substrate and electrically coupled to the first circuit. The second internal bonding pad is disposed on the surface of the substrate and electrically coupled to the second circuit. The second internal bonding pad is electrically coupled to the first internal bonding pad via the bonding wire. The external bonding pad is electrically coupled to the first internal bonding pad.

Abstract: A packaged power field effect transistor device includes a power field effect transistor die, a DBA substrate, a clip, a wire bond, leads, and an amount of plastic encapsulant. The top of the DBA has a plurality of metal plate islands. A sintered silver feature is disposed on one of the islands. A silvered backside of the die is directly bonded to the sintered silver structure of the DBA. The upper surface of the die includes a first aluminum pad (a source pad) and a second aluminum pad (a gate pad). A sintered silver structure is disposed on the first aluminum pad, but there is no sintered silver structure disposed on the second aluminum pad. A high current clip is attached via soft solder to the sintered silver structure on the first aluminum pad (the source pad). A bond wire is ultrasonically welded to the second aluminum pad (gate pad).

Abstract: A plurality of approaches for forming a semiconductor device using an adaptive patterning method is disclosed. Some approaches include placing a semiconductor die unit on a carrier element, calculating trace geometry for a second set of traces, constructing a prestratum comprising a first set of traces, and constructing the second set of traces according to the calculated trace geometry. Forming the semiconductor device may further include electrically connecting at least one of the first set of traces to at least one of the second set of traces, and electrically connecting at least one bond pad of the semiconductor die unit to a destination pad through the at least one of the first set of traces and the at least one of the second set of traces.