Abstract: A method of forming a semiconductor device includes the following operations. A substrate is provided with a device and an insulating layer disposed over the device. A silicon-containing heterocyclic compound precursor and a first oxygen-containing compound precursor are introduced to the substrate, so as to form a zeroth dielectric layer on the insulating layer. A zeroth metal layer is formed in the zeroth dielectric layer. A silicon-containing linear compound precursor and a second oxygen-containing compound precursor are introduced to the substrate to form a first dielectric layer on the zeroth dielectric layer. A first metal layer is formed in the first dielectric layer.

Abstract: Disclosed herein is a laminated structure including a first layer covering a substrate and a raised portion existing on the substrate, and a second layer covering the first layer, in which a first seam is formed inside the first layer, starting from a part at which the raised portion rises from the substrate or a vicinity of the rising part as a start point, a second seam is formed inside the second layer, starting from a part at which the first layer positioned above the substrate rises or a part of the second layer corresponding to a vicinity of the rising part as a start point, and the first seam and the second seam are discontinuous.

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices. A semiconductor device includes a metal gate electrode stacked on a semiconductor substrate with a gate insulation layer disposed therebetween, spacer structures disposed on the semiconductor substrate at both sides of the metal gate electrode, source/drain regions formed in the semiconductor substrate at the both sides of the metal gate electrode, and an etch stop pattern including a bottom portion covering the source/drain regions and a sidewall portion extended from the bottom portion to cover a portion of sidewalls of the spacer structures, in which an upper surface of the sidewall portion of the etch stop pattern is positioned under an upper surface of the metal gate electrode.

Abstract: A gate structure straddling a plurality of semiconductor material portions is formed. Source regions and drain regions are formed in the plurality of semiconductor material portions, and a gate spacer laterally surrounding the gate structure is formed. Epitaxial active regions are formed from the source and drain regions by a selective epitaxy process. The assembly of the gate structure and the gate spacer is cut into multiple portions employing a cut mask and an etch to form multiple gate assemblies. Each gate assembly includes a gate structure portion and two disjoined gate spacer portions laterally spaced by the gate structure portion. Portions of the epitaxial active regions can be removed from around sidewalls of the gate spacers to prevent electrical shorts among the epitaxial active regions. A dielectric spacer or a dielectric liner may be employed to limit areas in which metal semiconductor alloys are formed.

Abstract: An integrated circuit can include first and second FETs of a particular conductivity type on a substrate, wherein a first source/drain region of the first FET is closer to a center of a first channel region of the first FET than a second source/drain region of the second FET is to a center of a second channel region of the second FET.

Abstract: A gate structure in a semiconductor device includes: a gate stack formed on a substrate with three sections, a bottom portion, a top portion, and a sacrificial cap layer over the top portion; gate spacers, source and drain regions, a nitride encapsulation over top and sidewalls of the gate stack after removal of the sacrificial cap layer, an organic planarizing layer over the nitride encapsulation, planarizing the encapsulation, and silicidation performed over the source and drain regions and the bottom portion after removal of the nitride encapsulation, the organic planarizing layer, and the top portion of the gate stack.

Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.

Abstract: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.

Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate, and performing a second annealing process on the substrate and the second stress film.

Abstract: The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.

Abstract: One method includes forming first sidewall spacers adjacent opposite sides of a sacrificial gate structure and a gate cap layer, removing the gate cap layer and a portion of the first sidewall spacers to define reduced-height first sidewall spacers, forming second sidewall spacers, removing the sacrificial gate structure to thereby define a gate cavity, whereby a portion of the gate cavity is laterally defined by the second sidewall spacers, and forming a replacement gate structure in the gate cavity, wherein at least a first portion of the replacement gate structure is positioned between the second sidewall spacers. A device includes a gate structure positioned above the substrate between first and second spaced-apart portions of a layer of insulating material and a plurality of first sidewall spacers, each of which are positioned between the gate structure and on one of the first and second portions of the layer of insulating material.

Abstract: A semiconductor device of an embodiment includes: a substrate formed of a single-crystal first semiconductor; a gate insulating film on the substrate; a gate electrode including a layered structure of a semiconductor layer formed of a polycrystalline second semiconductor and a metal semiconductor compound layer formed of a first metal semiconductor compound that is a reaction product of a metal and the second semiconductor; and electrodes formed of a second metal semiconductor compound that is a reaction product of the metal and the first semiconductor, and formed on the substrate with the gate electrode interposed therebetween, and an aggregation temperature of the first metal semiconductor compound on the polycrystalline second semiconductor is lower than an aggregation temperature of the second metal semiconductor compound on the single-crystal first semiconductor, and a cluster-state high carbon concentration region is included in an interface between the semiconductor layer and the metal semiconductor co

Abstract: The present disclosure provides a fabricating method of a semiconductor chip which includes the following steps. First, a substrate is provided. The substrate defines a memory unit region and a peripheral logic region. Then, a first spacer is formed around a stack structure of the memory unit region. The first space includes a first silicon oxide layer and the first silicon oxide layer directly contacts with the stack structure. After that, a silicon nitride layer is formed on both the first spacer and the peripheral logic region. Finally, the additional silicon nitride layer on the first spacer is removed but portions of the additional silicon nitride layer around gate structures in the peripheral logic region are remained.

Abstract: A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.

Abstract: A method for forming a semiconductor device is disclosed. A substrate including a gate dielectric layer and a gate electrode layer sequentially formed thereon is provided. An offset spacer is formed on sidewalls of the gate dielectric layer and the gate electrode layer. A carbon spacer is formed on a sidewall of the offset spacer, and the carbon spacer is then removed. The substrate is implanted to form a lightly doped region using the gate electrode layer and the offset spacer as a mask. The method may also include providing a substrate having a gate dielectric layer and a gate electrode layer sequentially formed thereon. A liner layer is formed on sidewalls of the gate electrode layer and on the substrate. A carbon spacer is formed on a portion of the liner layer adjacent the sidewall of the gate electrode layer. A main spacer is formed on a sidewall of the carbon spacer. The carbon spacer is removed to form an opening between the liner layer and the main spacer.

Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.

Abstract: A method for fabricating an integrated device is disclosed. A sacrificial gate stack is provided with a line width narrower than the target width of the final gate structure. After performing a tilt-angle implantation process, L-shape spacers are formed over the sidewalls of the sacrificial gate stack, and offset spacers are formed over the sidewalls of the L-shape spacers. An insulating layer is formed over the offset spacers and the substrate. Then, the sacrificial gate stack and the L-shape spacers are removed to form a trench in the insulating layer. A metal gate is then filled in the trench to form the final gate structure.

Abstract: CMOS transistors are formed incorporating a gate electrode having tensely stressed spacers on the gate sidewalls of an n channel field effect transistor and having compressively stressed spacers on the gate sidewalls of a p channel field effect transistor to provide differentially stressed channels in respective transistors to increase carrier mobility in the respective channels.

Abstract: Methods of manufacturing NOR-type flash memory device include forming a tunnel oxide layer on a substrate, forming a first conductive layer on the tunnel oxide layer, forming first mask patterns parallel to one another on the first conductive layer in a y direction of the substrate, and selectively removing the first conductive layer and the tunnel oxide layer using the first mask patterns as an etch mask. Thus, first conductive patterns and tunnel oxide patterns are formed, and first trenches are formed to expose the surface of the substrate between the first conductive patterns and the tunnel oxide patterns. A photoresist pattern is formed to open at least one of the first trenches, and impurity ions are implanted using the photoresist pattern as a first ion implantation mask to form an impurity region extending in a y direction of the substrate. The photoresist pattern is removed.

Abstract: An integrated circuit is provided. A gate dielectric and a gate are provided respectively on and over a semiconductor substrate. A junction is formed adjacent the gate dielectric and a shaped spacer is formed around the gate. A spacer is formed under the shaped spacer and a liner is formed under the spacer. A first dielectric layer is formed over the semiconductor substrate, the shaped spacer, the spacer, the liner, and the gate. A second dielectric layer is formed over the first dielectric layer. A local interconnect opening is formed in the second dielectric layer down to the first dielectric layer. The local interconnect opening in the first dielectric layer is opened to expose the junction in the semiconductor substrate and the first gate. The local interconnect openings in the first and second dielectric layers are filled with a conductive material.

Abstract: A semiconductor device includes a substrate having shallow trench isolation and source/drain regions located therein, a gate stack located on the substrate between the source/drain regions, a first gate spacer on the sidewall of the gate stack, and a second gate spacer on the sidewall of the first gate spacer.

Abstract: The invention provides a method for forming a contact plug, comprising: forming a gate, a sidewall spacer, a sacrificial sidewall spacer, a source region and a drain region on a substrate, wherein the sidewall spacer is formed around the gate, the sacrificial sidewall spacer is formed over the sidewall spacer, and the source region and the drain region are formed within the substrate and on respective sides of the gate; forming an interlayer dielectric layer, with the gate, the sidewall spacer and the sacrificial sidewall spacer being exposed; removing the sacrificial sidewall spacer to form a contact space, the sacrificial sidewall spacer material being different from that of the gate, the sidewall spacer and the interlayer dielectric layer; forming a conducting layer to fill the contact space; and cutting off the conducting layer, to form at least two conductors connected to the source region and the drain region respectively.

Abstract: An exemplary structure for a gate structure of a field effect transistor comprises a gate electrode; a gate insulator under the gate electrode having footing regions on opposing sides of the gate electrode; and a sealing layer on sidewalls of the gate structure, wherein a thickness of lower portion of the sealing layer overlying the footing regions is less than a thickness of upper portion of the sealing layer on sidewalls of the gate electrode, whereby the field effect transistor made has almost no recess in the substrate surface.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; an offset spacer formed on a side surface of the gate electrode; an inner sidewall formed on the side surface of the gate electrode with the offset spacer interposed therebetween, and having an L-shaped cross section; and an insulating film formed to cover the gate electrode, the offset spacer, the inner sidewall, and a part of the semiconductor region located laterally outward from the inner sidewall. The offset spacer includes an inner offset spacer formed on the side surface of the gate electrode and an outer offset spacer formed to cover the side surface of the gate electrode and the inner offset spacer. The outer offset spacer is in contact with a top end and outer side surface of the inner offset spacer.

Abstract: A semiconductor structure. The structure includes (i) a semiconductor substrate which includes a channel region, (ii) first and second source/drain regions on the semiconductor substrate, (iii) a gate dielectric region, and (iv) a gate electrode region, (v) a plurality of interconnect layers on the gate electrode region, and (vi) first and second spaces. The gate dielectric region is disposed between and in direct physical contact with the channel region and the gate electrode region. The gate electrode region is disposed between and in direct physical contact with the gate dielectric region and the interconnect layers. The first and second spaces are in direct physical contact with the gate electrode region. The first space is disposed between the first source/drain region and the gate electrode region. The second space is disposed between the second source/drain region and the gate electrode region.

Abstract: An impact ionization MOSFET is formed with the offset from the gate to one of the source/drain regions disposed vertically within the device structure rather than horizontally. The semiconductor device comprises a first source/drain region having a first doping level; a second source/drain region having a second doping level and of opposite dopant type to the first source/drain region, the first and second source/drain regions being laterally separated by a silicon-germanium intermediate region having a doping level less than either of the first and second doping levels; a gate electrode electrically insulated from, and disposed over, the intermediate region, the first and second source/drain regions being laterally aligned with the gate electrode; where the entire portion of the first source/drain region that forms a boundary with the intermediate region is separated vertically from the top of the intermediate region.

Abstract: A vertical field effect transistor (FET) comprises a gate electrode and a first electrode layer having a dielectric layer interposed between these electrodes and a semiconducting active layer electrically coupled to the first electrode. The active layer and the dielectric layer sandwich at least a portion of the first electrode where at least one portion of the active layer is unshielded by the first electrode such that the unshielded portion is in direct physical contact with the dielectric layer. A second electrode layer is electrically coupled to the active layer where the second electrode is disposed on at least a portion of the unshielded portion of the active layer such that the second electrode can form electrostatic fields with the gate electrode upon biasing in unscreened regions near the first electrode.

Abstract: The present disclosure provides a device in an integrated circuit. The device includes an active region in a semiconductor substrate; an isolation region adjacent the active region; a gate disposed on the active region and extending to the isolation region in a first direction; and a gate contact disposed within the isolation region, having a portion directly overlying and contacting the gate, and having a geometry horizontally extending to a first dimension in the first direction and a second dimension in a second direction approximately perpendicular to the first direction. The first dimension is greater than the second dimension.

Abstract: An extended drain transistor (100) comprising a substrate (101), a gate (103) formed on the substrate (100), the gate (103) having a first side wall (104) and a second side wall (105) opposing the first side wall (104), an extended drain (106) implanted in a surface portion of the substrate (101) adjacent the second side wall (105) of the gate (103), a spacer (107) on the second side wall (105) of the gate (103), a source (108) implanted in a surface portion of the substrate (101) adjacent the first side wall (104) of the gate (103), and a drain (109) implanted in a surface portion of the substrate (101) adjacent the spacer (107) in such a manner that the extended drain (106) is arranged between the gate (103) and the drain (109).

Abstract: A nonvolatile semiconductor memory device includes a gate electrode formed on a gate insulating film, a source/drain region formed at each side of the gate electrode and including a first region, a second region and a third region located between the first and second regions, a first silicon oxide film formed on a sidewall of the gate electrode, a second silicon oxide film formed on the third region, and a silicon nitride film formed on an upper surface of the second silicon oxide film. The first silicon oxide film, the second silicon oxide film having the silicon nitride film, and a contact plug are contiguously arranged on the first, third and second regions of the source/drain region. The contact plug extends through the second silicon oxide film and the second nitride file to contact the source/drain region.

Abstract: A method of manufacturing a transistor (300), the method comprising forming a gate (101) on a substrate (102), forming a spacer (201) on lateral side walls of the gate (101) and on an adjacent portion (202) of the substrate (102), modifying material of the spacer (201) so that the modified spacer (301) covers only a lower portion (303) of the lateral side walls of the gate (101), and providing source/drain regions (301) in the modified spacer (301).

Abstract: Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors with a higher diode turn-on voltage. For example, one or more embodiments include a JFET with a doped silicon-carbide gate, while other embodiments include a JFET with a metal gate. One or more embodiments also relate to systems and devices in which the improved JFET may be employed, as well as methods of manufacturing the improved JFET.

Abstract: The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.

Abstract: A disclosed semiconductor device includes multiple gate electrodes disposed on a semiconductor substrate; and multiple sidewall spacers disposed on sidewalls of the gate electrodes. The thickness of the sidewall spacers is larger on the sidewalls along longer sides of the gate electrodes than on the sidewalls along shorter sides of the gate electrodes.

Abstract: A technique for and structures for camouflaging an integrated circuit structure. The technique including forming active areas of a first conductivity type and LDD regions of a second conductivity type resulting in a transistor that is always non-operational when standard voltages are applied to the device.

Abstract: A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that is different from a lattice constant of a semiconductor substrate and imparts a tensile strain in a device channel of an nFET gate stack. Typically, and when the semiconductor is composed of silicon, the first layer of the bi-layer nFET embedded stressor element is composed of Si:C. The bi-layer nFET embedded stressor element further includes a second layer of a second epitaxy semiconductor material that has a lower resistance to dopant diffusion than the first epitaxy semiconductor material. Typically, and when the semiconductor is composed of silicon, the second layer of the bi-layer nFET embedded stressor element is composed of silicon.

Abstract: A semiconductor structure is provided that includes an asymmetric gate stack located on a surface of high k gate dielectric. The asymmetric gate stack includes a first portion and a second portion, wherein the first portion has a different threshold voltage than the second portion. The first portion of the inventive asymmetric gate stack includes, from bottom to top, a threshold voltage adjusting material and at least a first conductive spacer, while the second portion of the inventive asymmetric gate stack includes at least a second conductive spacer over the gate dielectric. In some embodiments, the second conductive spacer is in direct contact with the underlying high k gate dielectric, while in other embodiments, in which the first and second conductive spacers are comprised of different conductive materials, the base of the second conductive spacer is in direct contact with the threshold adjusting material.

Abstract: A semiconductor device includes a plurality of first MIS transistors and a plurality of second MIS transistors formed on a semiconductor substrate and a liner insulating film applying stress along the gate length direction. Each of the first MIS transistors includes first L-shaped sidewalls each having an L-shaped cross-sectional shape, and each of the second MIS transistors includes second L-shaped sidewalls each having an L-shaped cross-sectional shape and outer sidewalls. The minimum thickness of a part of the liner insulating film located on each of second source/drain regions of the second MIS transistor is larger than the minimum thickness of a part thereof located on each of first source/drain regions of the first MIS transistor.

Abstract: A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates.

Abstract: A gate structure includes a gate insulation layer pattern, a gate electrode, a first spacer and a protecting layer pattern. The gate insulation layer pattern is on a substrate. The gate electrode is on the gate insulation layer pattern, the gate electrode including a lower portion having a first width, a central portion having a second width smaller than the first width and an upper portion having a third width. The first spacer is on a lower sidewall of the gate electrode. The protecting layer pattern is on a central sidewall of the gate electrode.

Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.

Abstract: A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0° and 90° to the PMOS fin and includes a second surface of a second crystal orientation.

Abstract: Disclosed are a non-volatile semiconductor memory device capable of simplifying the complicated structure of a transistor, and a fabrication method for the same.

Abstract: A gate electrode structure is provided, which includes, from bottom to top, an optional, yet preferred metallic layer, a Ge rich-containing layer and a Si rich-containing layer. The sidewalls of the Ge rich-containing layer include a surface passivation layer. The inventive gate electrode structure serves as a low-temperature electrically activated gate electrode of a MOSFET in which the materials thereof as well as the method of fabricating the same are compatible with existing MOSFET fabrication techniques. The inventive gate electrode structure is electrically activated at low processing temperatures (on the order of less than 750° C.). Additionally, the inventive gate electrode structure also minimizes gate-depletion effects, does not contaminate a standard MOS fabrication facility and has sufficiently low reactivity of the exposed surfaces that renders such a gate electrode structure compatible with conventional MOSFET processing steps.

Abstract: Embodiments relate to a manufacturing method of a flash memory device which improves electrical characteristics by reducing or preventing void generation. A manufacturing method of a flash memory device according to embodiments includes forming a plurality of gate patterns over a semiconductor substrate including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate. A spacer layer may be formed as a compound insulating layer structure over the side wall of the gate pattern. A source/drain area may be formed over the semiconductor substrate at both sides of the control gate. An insulating layer located at the outermost of the spacer layer may be removed. A contact hole may be formed between the gate patterns by forming and patterning the interlayer insulating layer. A contact plug may be formed in the contact hole.

Abstract: A metal oxide semiconductor field effect transistor structure and a method for fabricating the metal oxide semiconductor field effect transistor structure provide for a halo region that is physically separated from a gate dielectric. The structure and the method also provide for a halo region aperture formed horizontally and crystallographically specifically within a channel region pedestal within the metal oxide semiconductor field effect transistor structure. The halo region aperture is filled with a halo region formed using an epitaxial method, thus the halo region may be formed physically separated from the gate dielectric. As a result, performance of the metal oxide semiconductor field effect transistor is enhanced.

Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.

Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.