Abstract: A low-melting-point alloy composite material and a composite material structure are provided. The low-melting-point alloy composite material includes 48 to 54 wt. % In, 30 to 36 wt. % Bi, 14 to 21 wt. % Sn, and at least one selected from 0.1 to 0.3 wt. % carbon material and 0.05 to 0.1 wt. % boron nitride (BN). The composite material structure includes a metal layer, a low-melting-point alloy composite material layer, and an interface material layer, wherein the material of the low-melting-point alloy composite material layer is the above low-melting-point alloy composite material, and the interface material layer is formed between the metal layer and the low-melting-point alloy composite material layers.

Abstract: To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

Abstract: One aspect of the invention relates to a semiconductor device including a housing and a semiconductor chip partly embedded in a plastic housing composition. Another aspect relates to a method for producing the same. The plastic housing composition has at least one host component having a softening temperature and an incorporated component having a phase change temperature. In this case, the softening temperature of the host component is greater than the phase change temperature of the incorporated component.

Abstract: A method for forming a high thermal conductivity heat sink to IC package interface is disclosed. The method uses reactive getter materials added to a two phase solder system having a phase change temperature that is about the normal operating temperature range of the IC, to bind absorbed and dissolved oxygen in the two phase solder interface material at or near the air to solder surface. Over time this chemical binding action results in an oxide layer at the air to solder surface that slows the rate of oxygen absorption into the solder interface material, and thus reduces the harmful oxidation of the solder to IC package interface and the solder to heat sink interface.

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract: An integrated circuit chip has one or more electrically conductive nano-fibers formed on one or more contact pads of the integrated circuit chip. The one or more electrically conductive nano-fibers are configured to provide an adhesive force by intermolecular forces and establish an electrical connection with one or more contact pads disposed on the surface of a chip package.

Abstract: A process and electronic assembly for conducting heat from a semiconductor circuit device mounted to a substrate. The substrate is supported by a housing member equipped with a heat-conductive member. A surface of the device opposite the substrate is bonded to the heat-conductive member with a solder joint formed of indium and optionally one or more alloying constituents that increase the melting temperature of the solder joint above that of indium. The housing member, substrate, and device are assembled so that an indium-containing solder material is present between the heat-conductive member and the surface of the device opposite the substrate. The solder material is then reflowed to form the solder joint. The alloying constituent(s) are preferably introduced into the solder joint during reflow.

Abstract: The present invention discloses a method of providing an integral thermal interface on an interface surface of a heat dissipation device, such as a heat sink. In accordance with the present invention, the phase change material is applied directly onto the interface surface of the heat sink to form an integral interface layer directly on the heat sink during the manufacturing process. This process includes the steps of providing a heat dissipating device having an interface surface, liquefying the phase change material at a controlled temperature so as to decrease the material viscosity to a flowable form, applying the liquefied phase change material directly onto the mating surface of the heat dissipating device either by directly dispensing the material, screen printing or stencil printing and cooling the material causing it to cure on the surface of the heat dissipating device.

Abstract: The present invention relates to an integrated circuit system with at least one integrated circuit, a cooling body to dissipate the heat generated by the integrated circuit and a latent heat storage module having a latent heat storage medium. The latent heat storage module is thermally connected to the cooling body in order to temporarily store the heat generated by the integrated circuit and to convey it to the cooling body. The integrated circuit has at least one semiconductor component which is assembled on a substrate and the substrate is in direct thermal contact with the latent heat storage module.