Abstract: A semiconductor memory fabrication method and the semiconductor memory are involved in semiconductors production and fabrication processes. The semiconductor memory manufacturing method of the present invention includes the following steps: 1) Using a semiconductor integrated circuit manufacturing process, a basic memory module array being fabricated on a wafer where the basic memory modules have IO circuit interfaces; 2) Dicing the wafer to obtain memory chips; 3) Packaging the separated memory chip. In step 1), the IO circuit interfaces of the basic memory modules adjacent in the orthogonal directions are connected by interconnection lines; and according to the predetermined memory capacity, step 2) is to determine the number of basic memory modules contained in the chip and the position of the edge line of the memory chip so that the interconnections across the edge line are cut off so to separate the entire memory chip from the wafer by dicing along the edge line of the memory chip.

Abstract: A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. The 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tongue and groove device at the memory wafer top and bottom surfaces allows an accurate stack alignment. The memory stack also has micro-channels on the backside to allow fluid cooling. The memory stack is further diced at the fixed clock-cycle distance and is flipped on its side and re-assembled on to a template into a pseudo-wafer format. The top side wall of the assembly is polished and built with BEOL to fan-out and use the T&J fine pitch connection to join to the 2D logic wafer. The other side of the memory stack is polished, fanned-out, and bumped with C4 solder. The invention also comprises a process for manufacturing the device.

Abstract: The multilayer structure including a substrate film and a number of functional components and/or integrated circuits, including at least one first conductive element, at least one second conductive element, and at least one subsidiary conductive element, optionally traces, provided upon the substrate film. The substrate film has been provided with at least one coupling location enhancement element at a coupling location with respect to the substrate film, wherein at said coupling location the coupling location enhancement element is configured to provide an electrical connection between the first conductive element and second conductive element, further wherein said coupling location enhancement element is configured to inhibit coupling between the first conductive element and the subsidiary conductive element at the coupling location and between the second conductive element and the subsidiary conductive element at the coupling location.

Abstract: A package structure is disclosed herein. The package structure includes an insulating composite layer, a sealant disposed on the insulating composite layer, a first chip embedded in the sealant and having a plurality of first conductive pads exposed through the sealant, a circuit layer module having a plurality of circuit layers and a plurality of dielectric layers having a plurality of conductive vias, a second chip embedded in the circuit layer module and has a plurality of second conductive pads electrically connected to the circuit layers through the conductive vias, and a protecting layer having a plurality of openings disposed on the circuit layer module, in which the openings expose a portion of the circuit layer module.

Abstract: A disclosed apparatus may include (1) an integrated circuit electrically coupled to a substrate, (2) a plurality of electrical contacts that are disposed on the substrate and are electrically coupled to the integrated circuit via the substrate, (3) at least one cable assembly electrically coupled to the plurality of electrical contacts, and (4) a package stiffener physically coupled to the substrate around the integrated circuit such that the at least one cable assembly is accessible to at least one electrical cable. Various other apparatuses, systems, and methods are also disclosed.

Abstract: A wiring board includes: a substrate first elastic modulus including a first surface and second surface positioned on the opposite side of the first surface; wiring positioned on the first surface side of the substrate and connected to an electrode of an electronic component mounted on the wiring board; and a reinforcing member second elastic modulus greater than the first elastic modulus and including a first reinforcing part positioned on the first surface side of the substrate or on the second surface side of the substrate and partially overlaps the electronic component mounted on the wiring board when viewed along the normal direction of the first surface of the substrate. The wiring includes a section that does not overlap the reinforcing member when viewed along the normal direction of the first surface including pluralities of peaks and valleys aligned along a planar direction of the first surface of the substrate.

Abstract: The power on wafer assembly can include: a compliant connector, an integrated circuit, a printed circuit board (PCB), a power component, and a set of compliant connectors. The power on wafer assembly can optionally include: a compression element, a cooling system, a set of mechanical clamping components, and a power source. However, the power on wafer assembly can additionally or alternately include any other suitable components.

Abstract: A method for forming a circuit board includes forming a first dielectric layer, a first circuit layer in the first dielectric layer, a second circuit layer on the first dielectric layer, and a plurality of conductive vias in the first dielectric layer and connecting the first circuit layer to the second circuit layer; forming a second dielectric layer on the first dielectric layer and the second circuit layer; forming a plurality of openings in the second dielectric layer to expose a plurality of parts of the second circuit layer; forming a seed layer on the exposed parts of the second circuit layer and sidewalls of the openings; and forming a plurality of bonding layers on the seed layer, wherein the bonding layers and the seed layer are made of copper, and the bonding layers are porous.

Abstract: An antenna element including a base plate, a first ground clustered pillar projecting from the base plate, a second ground clustered pillar projecting from the base plate and spaced apart from a first side of the first ground clustered pillar is provided. The ground clustered pillars, the signal ears, and the ground ears can be shapes so that the capacitive coupling between the ears and the pillars is sufficient to allow them to be spaced further apart, thereby reducing the number of elements required in the phased array. In some embodiments, the ground ear can be directly machined with the base plate thereby obviating the need for the ground ear to be overmolded into the base plate with the signal ear. In other embodiments the phased array antenna can utilize elastomeric connectors to further improve the mechanical and electrical reliability of the connections of the phase array antenna.

Abstract: The power on wafer assembly can include: a compliant connector, an integrated circuit, a printed circuit board (PCB), a power component, and a set of compliant connectors. The power on wafer assembly can optionally include: a compression element, a cooling system, a set of mechanical clamping components, and a power source. However, the power on wafer assembly can additionally or alternately include any other suitable components.

Abstract: A semifinished product includes a base structure, wafer structures, a cover structure and a further cover structure. The base structure has an electrically conductive layer and/or an electrically insulating layer. The wafer structures are on the base structure and have electronic components. The cover structure has at least one further layer and covers the wafer structures and part of the base structure. Separate electronic components are arranged on the cover structure and a further cover structure is provided to cover the separate electronic components and part of the cover structure. A component carrier includes a bare die with pads. The bare die is laminated between a base laminate and a cover laminate and has a lateral semiconductor surface being exposed from the base laminate and the cover laminate. A redistribution layer increases spacing of external electric contacts relative to spacing between pads of the bare die.

Abstract: A multilayer circuit board comprises an inner circuit unit having at least one solder portion, and at least one outer circuit board coupled with the inner circuit unit. The inner circuit unit connects with the outer circuit board by an insulation colloid. At least one side of the inner circuit unit does not extend to edges of the multilayer circuit board. The at least one outer circuit board forms at least one through-hole and at least one conductive hole. The at least one conductive hole which is internally-plated with copper extends from the at least one outer circuit board to the inner circuit unit. A method of manufacturing the multilayer circuit board is also disclosed.

Abstract: A semiconductor structure including an insulating encapsulant, a plurality of semiconductor dies separately embedded in the insulating encapsulant, and an electrical communication path is provided. The electrical communication path includes at least one turning wiring connected to a conductive terminal of one of the semiconductor dies and extending across and above the insulating encapsulant to reach another conductive terminal of another one of the semiconductor dies. A layout area of the at least one turning wiring is within a region corresponding to an edge of one of the semiconductor dies and a closest edge of the adjacent one of the semiconductor dies.

Abstract: A stacked module includes stacked multiple boards having components mounted thereon, a connection component electrically connecting the stacked boards, and a feeding/cooling mechanism configured to feed the boards and to cool the components mounted on the boards. The feeding/cooling mechanism includes a cooling member that is inserted between the stacked, electrically connected boards and that is in contact with and cools the components mounted on the boards and a feeding member that is in contact with and feeds the boards.

Abstract: An embedded component package structure includes a substrate. A first conductive component extends from a first surface of the substrate to a second surface of the substrate, a first conductive layer is disposed on the first surface of the substrate, and a second conductive layer is disposed on the second surface of the substrate and is electrically connected to the first conductive layer by the first conductive component. A die is disposed in a through hole in the substrate. A back surface of the die is exposed from the second surface of the substrate. A first dielectric layer covers an active surface of the die and the first surface of the substrate. A third conductive layer is disposed on the first dielectric layer and is electrically connected to the die by a second conductive component. A first metal layer is disposed directly on the back surface of the die.

Abstract: An apparatus including a printed circuit board including a body of a plurality of alternating layers of conductive material and insulating material; and a package including a die disposed within the body of the printed circuit board. A method including forming a printed circuit board including a core and a build-up section including alternating layers of conductive material and insulating material coupled to the core; and coupling a package including a die to the core of the printed circuit board such that at least a portion of a sidewall of the package is embedded in at least a portion of the build-up section. An apparatus including a printed circuit board including a body; a computing device including a package including a microprocessor disposed within the body of the printed circuit board; and a peripheral device that provides input or output to the computing device.

Abstract: A package structure includes a semiconductor device, a first dielectric layer, a redistribution line and a conductive bump. The first dielectric layer is over the semiconductor device and has first and second openings on opposite surfaces of the first dielectric layer, wherein the first and second openings taper in substantially opposite direction. The redistribution line is partially in the first opening of the first dielectric layer and electrically connected to the semiconductor device. The conductive bump is partially embeddedly retained in the second opening and electrically connected to the redistribution line.

Abstract: An apparatus according to one embodiment of the present disclosure comprises a first circuit board; a first connector provided on one face of the first circuit board; a second circuit board disposed on the one face of the first circuit board, and electrically connected to the first circuit board; a second connector provided on one face of the second circuit board, and engaged with the first connector to electrically connect the second circuit board to the first circuit board; a sealing member disposed between the first circuit board and the second circuit board to seal a space between the first connector and the second connector; and a coupling member coupling the first circuit board and the second circuit board to each other.

Abstract: Implementations of semiconductor packages may include: a prefabricated electrically conductive section; two or more metal oxide semiconductor field effect transistors (MOSFET) physically coupled together; and a back metal coupled to the two or more MOSFETs; wherein the electrically conductive section may be coupled to the back metal and may be configured to electrically couple the two or more MOSFETs together during operation of the two or more MOSFETs.

Abstract: A method of forming a semiconductor package includes providing a substrate having one or more conductive elements disposed therein. Each conductive element extends from a first surface of the substrate toward a second surface of the substrate extending beyond the second surface. The second surface comprises one or more substrate regions not occupied by a conductive element. A first die is attached within a substrate region, and the first die is coupled to at least one of the conductive elements. The first die may be coupled to at least one of the conductive elements by a wire bond connection. Alternatively, an RDL is formed over the second surface, and the first die is coupled to at least one conductive element through the RDL. A second die may be attached to an outer surface of the RDL, and the second die is electrically coupled to the first die through the RDL.

Abstract: A printed circuit board includes: an insulating layer including a cavity formed therein, the cavity being recessed into the insulating layer from a top surface of the insulating layer; a first circuit layer formed inside the insulating layer such that a portion of the first circuit layer is disposed within the cavity; a second circuit layer disposed above the insulating layer; a first surface-treated layer disposed above the portion of the first circuit layer disposed within the cavity; and a second surface-treated layer disposed above the second circuit layer.

Abstract: A method is disclosed for selecting a semiconductor chip in a stack of semiconductor chips interconnected by through-lines by receiving selection signals at the first terminals located on a first surface of the semiconductor chip, connecting each first terminal to a selected second terminal located on a second surface of the semiconductor chip where each selected second terminal is not aligned with the first terminal to which it is connected, and generating an internal signal based on a selected one of the received selection signals.

Abstract: Disclosed is a board including a semiconductor device including a first terminal to receive a signal that sets a functionality of the device, a second terminal to supply a first value and a third terminal to supply a second value, a first connection member connected to the first to third terminals of the semiconductor device, and a second connection member adapted to be connected to the first connection member provided on a counterpart board, with at least two terminals of the second connection member connected together via a first connection circuit, wherein the first connection member of the board is connected to the second connection member of another counterpart board.

Abstract: A flexible substrate includes a circuit board, a flexible heat-dissipating structure and an adhesive. The circuit board has a substrate and a circuit layer formed on a top surface of the substrate, and the flexible heat-dissipating structure has a flexible supporting plate and a flexible heat-dissipating metal layer formed on a surface of the flexible supporting plate. The flexible heat-dissipating metal layer of the flexible heat-dissipating structure is connected with a bottom surface of the substrate by the adhesive. The circuit layer and the flexible heat-dissipating metal layer are made of same material.

Abstract: A semiconductor device or semiconductor device package for transmitting a plurality of differential signals, the reliability of which hardly deteriorates. The semiconductor device is an area array semiconductor device in which a plurality of lands (external terminals) including a plurality of lands for transmitting a plurality of differential signals are arrayed in a matrix pattern in the back surface of a wiring substrate. Some of the lands are located in the outermost periphery of the matrix pattern. Some others of the lands are located inward of the outermost periphery of the matrix pattern and in rows next to the outermost periphery. The spacing between lands in a second region between the lands located in the rows next to the outermost periphery and the side surface of the wiring substrate is larger than in a first region in the outermost periphery.

Abstract: A semiconductor device package with an interposer, which serves as an intermediate or bridge circuit of various electrical pathways in the package to electrically connect any two or more electrical contacts, such as any two or more electrical contacts of a substrate and a chip. In particular, the interposer provides electrical pathways for simplifying a circuit layout of the substrate, reducing the number of layers of the substrate, thereby reducing package height and manufacturing cost. Furthermore, the tolerance of the circuit layout can be increased or maintained, while controlling signal interference between adjacent traces and accommodating high density circuit designs. Moreover, the package is suitable for a PoP process, where a profile of top solder balls on the substrate and a package body can be varied according to particular applications, so as to expose at least a portion of each of the top solder balls and electrically connect the package to another device through the exposed, top solder balls.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; mounting a stack substrate over the base substrate with an inter-substrate connector directly on the stack substrate and the base substrate, the inter-substrate connector having an inter-substrate connector pitch; mounting an integrated circuit over the stack substrate, the integrated circuit having an internal connector directly on the stack substrate; and attaching an external connector directly on the base substrate, the external connector having an external connector pitch greater than the inter-substrate connector pitch.

Abstract: Embodiments for multi-chip and multi-substrate reconstitution based packaging are provided. Example packages are formed using substrates from a reconstitution. substrate panel or strip. The reconstitution substrate panel or strip may include known good substrates of same or different material types and/or same of different layer counts and sizes. As such, different combinations of reconstitution substrates and chips can be used within the same package, thereby allowing substrate customization according to semiconductor chip block(s) and types contained in the package.

Abstract: An electronic package includes a first layer having a first surface, the first layer includes a first device having a first electrical node, and a first contact pad in electrical communication with the first electrical node and positioned within the first surface. The package includes a second layer having a second surface and a third surface, the second layer includes a first conductor positioned within the second surface and a second contact pad positioned within the third surface and in electrical communication with the first conductor. A first anisotropic conducting paste (ACP) is positioned between the first contact pad and the first conductor to electrically connect the first contact pad to the first conductor such that an electrical signal may pass therebetween.

Abstract: Methods and apparatus for thinner package on package (“PoP”) structures. A structure includes a first integrated circuit package including at least one integrated circuit device mounted on a first substrate and a plurality of package on package connectors extending from a bottom surface; and a second integrated circuit package including at least another integrated circuit device mounted on a second substrate and a plurality of lands on an upper surface coupled to the plurality of package on package connectors, and a plurality of external connectors extending from a bottom surface; wherein at least the second substrate is formed of a plurality of layers of laminated dielectric and conductors. In another embodiment a cavity is formed on the bottom surface of the first substrate and a portion of the another integrated circuit extends partially into the cavity. Methods for making the PoP structures are disclosed.

Abstract: Provided is a semiconductor package and a method of fabricating the same. The semiconductor package includes: a package body including a plurality of sheets; semiconductor chips mounted in the package body; and an external connection terminal provided on a first side of the package body, wherein the sheets are stacked in a parallel direction to the first side.

Abstract: The semiconductor package structure includes first and second packages. The first package has at least one first semiconductor chip disposed on a first printed circuit board, and at least one first pad disposed on the at least one first semiconductor chip. The second package has at least one second pad disposed on the first package, and at least one second semiconductor chip disposed on the at least one second pad. The at least one first semiconductor chip is electrically connected to the first printed circuit board. The at least one second pad is electrically connected to the at least one second semiconductor chip. The at least one second pad faces the at least one first pad.

Abstract: Microelectronic packages are fabricated by stacking integrated circuits upon one another. Each integrated circuit includes a semiconductor layer having microelectronic devices and a wiring layer on the semiconductor layer having wiring that selectively interconnects the microelectronic devices. After stacking, a via is formed that extends through at least two of the integrated circuits that are stacked upon one another. Then, the via is filled with conductive material that selectively electrically contacts the wiring. Related microelectronic packages are also described.

Abstract: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

Abstract: A first semiconductor package includes a first substrate, a first semiconductor chip attached to the first substrate, an encapsulant which covers the first semiconductor chip, and conductive elastic members which are embedded in the encapsulant but with parts thereof exposed. A package on package (POP) includes the first semiconductor package and a second semiconductor package stacked in the first semiconductor package. The second semiconductor package includes a second substrate and a second semiconductor chip attached to the second substrate. The exposed parts of the elastic members are electrically connected to the second substrate. The encapsulant of the first package is formed by a molding process while the conductive elastic members are compressed within their elastic limit by the mold.

Abstract: A method of manufacturing a semiconductor package includes forming a protection layer on a support plate, stacking substrates on the protection layer, electrically connecting the substrates to each other, forming a molding layer on the support plate, and removing the support plate while the protection layer remains on the substrates. The stacked substrates are offset from adjacent substrates.

Abstract: A semiconductor device includes a multi-layer substrate and a semiconductor element mounted on the multi-layer substrate. The multi-layer substrate contains a plurality of circuit-formation layers joined by a first resin material. The semiconductor element is mounted on the multi-layer substrate by being joined to the multi-layer substrate by a second resin material. The first resin material and the second resin material are curable in the same heating condition.

Abstract: A method of manufacture of an integrated circuit package system includes: providing a base substrate; coupling a base integrated circuit on the base substrate; forming a double side molded interposer unit over the base integrated circuit including: providing an interposer substrate having an interposer top and an interposer bottom, mounting a first integrated circuit to the interposer bottom and electrically connected thereto, mounting a second integrated circuit to the interposer top and electrically connected thereto, and molding a first chip cover on the first integrated circuit and a second chip cover on the second integrated circuit; and coupling an external component to the double side molded interposer unit.

Abstract: Embodiments of the invention relate to a semiconductor module and to a method for manufacturing a semiconductor module. In an embodiment of the invention, a semiconductor module for mounting to a board may include at least an integrated circuit having connections on at least one side of the integrated circuit, and at least a first layer which is applied to the side of the integrated circuit having the connections, wherein the free surface of the first layer facing away from the integrated circuit has a thermo-mechanical linear expansion in the in-plane direction of the surface which corresponds to the thermo-mechanical linear expansion of the board to which the semiconductor module is to be mounted.

Abstract: A structure of an integrated circuit module includes a wiring board, a plurality of integrated circuits and at least one terminating resistance circuit. The wiring board has a mounting region on at least one surface thereof. The plurality of integrated circuits are mounted in the mounting region of the wiring board and spaced from one another in a first direction. The at least one terminating resistance circuit is arranged between at least two adjacent integrated circuits, and coupled to an output of a last of the plurality of integrated circuits.

Abstract: An integrated circuit package system includes: providing a lower interposer substrate with lower exposed conductors; attaching a die over the lower interposer substrate; applying a stack encapsulant over the die and the lower interposer substrate having the lower exposed conductors partially exposed adjacent the stack encapsulant; and attaching an upper interposer substrate having upper exposed conductors over the stack encapsulant and with the upper exposed conductors substantially exposed.

Abstract: A method of manufacturing a plurality of stacked die semiconductor packages, including: attaching a second silicon wafer to a first silicon wafer, wherein the second silicon wafer has a plurality of open vias; attaching a third silicon wafer to the second silicon wafer, wherein the third silicon wafer has a plurality of open vias, and the open vias of the second and third silicon wafers are aligned with one another; etching a bonding material that attaches the wafers from the aligned open vias; filling the aligned open vias with a conductor; forming conductive bumps at open ends of the aligned open vias; back grinding the first silicon wafer; separating the stacked semiconductor dies from each other; attaching the bump end of the stacked semiconductor dies onto a substrate; encapsulating the stacked semiconductor dies and substrate; and singulating the encapsulated assembly.

Abstract: A semiconductor package comprises a substrate, a first semiconductor die mounted to the substrate, and a first double side mold (DSM) internal stackable module (ISM) bonded directly to the first semiconductor die through a first adhesive. The first DSM ISM includes a first molding compound, and a second semiconductor die disposed in the first molding compound. The semiconductor package further comprises a first electrical connection coupled between the first semiconductor die and the substrate, and a second electrical connection coupled between the first DSM ISM and the substrate.

Abstract: There is disclosed a semiconductor device comprising at least two substrates, at least one wiring being provided in each of the substrates, the substrates being stacked such that major surfaces on one side of each thereof oppose each other and the wirings being connected between the major surfaces, and a plurality of connecting portions being provided adjacent to each other while connected to each wiring on the major surfaces opposing each other, at least one of the connecting portions provided on the same major surface being formed smaller than the adjacent other connecting portion, the connecting portions being provided at positions opposing each other one to one on the major surface, the connecting portions being connected so that the wirings are connected between the major surfaces, one connecting portion of a pair of the connecting portions connected one to one being formed smaller than the other connecting portion.

Abstract: A semiconductor device includes a support body, a first substrate provided on a surface at one side of the support body, a second substrate provided on a surface at the other side of the support body, and a semiconductor chip provided on the first substrate exposed to an opening part piercing the support body and the second substrate. The first substrate includes a first dielectric layer and a wiring layer, a plurality of first electrodes connected to the semiconductor chip which first electrodes are provided on a first surface of the first substrate exposed to an inside of the opening part, and the second substrate includes a second dielectric layer made of a material substantially the same as the first dielectric layer.

Abstract: An IC package including a plurality of BGA IC packages stacked on a printed circuit board and a method of manufacturing the same. The IC package includes a printed circuit board, a first BGA IC package, having a plurality of first solder balls, stacked on the printed circuit board, a second BGA IC package, having a plurality of second solder balls, stacked on the first BGA IC package, and an interposer having a plurality of through-holes, which are filled by the second solder balls in a molten state such that the length of the second solder balls increases while the second solder balls harden, the interposer being joined to the top of the first BGA IC package.

Abstract: A method for making a semiconductor multi-package module includes a processor and a plurality of memory packages mounted on a surface of the multipackage module substrate. In some embodiments the memory packages include stacked die packages, and in some embodiments the memory packages include stacked memory packages. In some embodiments the processor is situated at or near the center of the multipackage module substrate and the plurality of memory packages or of stacked memory package assemblies are situated on the multipackage module substrate adjacent the processor.

Abstract: Integrated circuit packages are formed from a panel where the panel is separated by laser cutting the panel. In some embodiments, the panel is attached to the carrier for the formation of interconnect layers on the panel. Afterwards, the panel is cut with a laser while on the carrier to separate the integrated circuit packages. A tape or other type of structure may be attached to the top of the packages after the laser cutting. The integrated circuit packages are removed from the carrier by releasing the adhesive and removing the integrated circuit packages with the tape. The packages are then removed from the tape.

Abstract: An integrated circuit package system including a plurality of substrates and a plurality of semiconductor devices formed on each of the substrates. An edge connection system is provided and an electrical edge connector on each of the substrates is for attachment to the edge connection system. A vertically stacked configuration of the substrates is formed by attaching the substrates to the edge connection system.

Abstract: A multi-chip device which includes a plurality of integrated circuit die disposed one over another. Each integrated circuit die includes one or a plurality of bond pads. One or a plurality of conductors are disposed to electrically couple the bond pads of vertically adjacent integrated circuit die. Each conductor is designed, calculated, specified and/or predetermined to have a length so as to behave as a segment in a multi-drop transmission line. The multi-drop transmission line may be terminated at one end or utilized in a flow-through approach. In one embodiment, an integrated circuit die may be horizontally offset with respect to a vertically adjacent integrated circuit die to expose the periphery region. In another embodiment, each integrated circuit die may be stacked and aligned in a vertical column. In this embodiment, a spacer such as a thermally conductive spacer is disposed between each integrated circuit die in the stack.