Abstract: For securing a provable resource possession on a host device having spawned a set of virtual machines providing services to a client device, the client device is able to send a challenge request to each virtual machine, the challenge request containing a physically unclonable function (PUF) challenge and a filter rule; receive a PUF filtered response from each virtual machine, the PUF filtered response being a PUF response that is filtered according to the filter rule and obtained by challenging; combine the PUF filtered responses into a reconstructed PUF according to the filter rule; and if the reconstructed PUF corresponds to an expected response in the challenge-response database, validate that the set of virtual machines is effectively running on the right host device.

Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.

Abstract: A substrate with an electronic component embedded therein includes: a core layer having a through-portion; an electronic component disposed in the through-portion; an encapsulant disposed on a lower surface of the core layer, disposed in at least a portion of the through-portion, and covering at least a portion of a lower surface of the electronic component; and a build-up structure disposed on an upper surface of the core layer, and including a plurality of insulating layers, a plurality of wiring layers, and a plurality of via layers.

Abstract: A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.

Abstract: In some embodiments, the present disclosure relates to a method that includes aligning a stealth laser apparatus over a wafer using an infrared camera coupled to the stealth laser apparatus. The stealth laser apparatus is used to form a stealth damage region within the wafer that is continuously connected around the wafer and separates an inner region from an outer region of the wafer. The stealth damage region is also arranged at a first distance from an edge of the wafer and extends from a first depth to a second depth beneath a top surface of the wafer. Further, the method includes forming a groove in the wafer to separate the outer region from the inner region of the wafer. The outer region of the wafer is removed using a blade, and a top portion of the inner region of the wafer is removed using a grinding apparatus.

Abstract: The technology disclosed relates to systems and methods for generating a multi-part place identifier with at least one part. The system includes logic to receive a location address and a place name wherein the location address is a validated address. The system includes logic to calculate a geocode for the location address and use the geocode to identify a geometrical boundary encompassing the location address. The system includes logic to convert the identified geometrical boundary to an alpha-numeric identifier forming a Where part of the multi-part place identifier. The system can use an input location address or a place name to match a previously generated and stored multi-part place identifier. The system can provide the generated or matched multi-part place identifier to a user for use in further analysis.

Abstract: A substrate for pattern formation, the substrate including at least a base material and a perfluoro(poly)ether group-containing silane compound-derived portion, wherein the base material includes at least one main face having a first region and a second region which is a region for pattern formation, adjacent to the first region, and the perfluoro(poly)ether group-containing silane compound-derived portion is disposed in the first region.

Abstract: A method for manufacturing a semiconductor device includes forming semiconductor devices from a semiconductor wafer and identifying a position of the semiconductor device in the semiconductor wafer, wherein the forming the semiconductor devices includes forming a first repeating pattern including i semiconductor devices each having a unique pattern, forming a second repeating pattern including j semiconductor devices each having a unique pattern, defining semiconductor devices on the semiconductor wafer such that each of the k semiconductor devices has a unique pattern based on the first and second repeating patterns, and grinding a backside of the semiconductor wafer, wherein each unique pattern of the k semiconductor devices is composed of a combination of the unique patterns of the first and second repeating patterns, wherein the position of the semiconductor device is identified based on the unique patterns of the first and second repeating patterns and an angle of a grinding mark.

Abstract: A method for marking a semiconductor substrate at the die level for providing unique authentication and serialization includes projecting a first pattern of actinic radiation onto a layer of photoresist on the substrate using mask-based photolithography, the first pattern defining semiconductor device structures and projecting a second pattern of actinic radiation onto the layer of photoresist using direct-write projection, the second pattern defining a unique wiring structure having a unique electrical signature.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes bonding structure arranged directly between a first substrate and a second substrate. The first substrate includes a first transparent material and a first alignment mark. The first alignment mark is arranged on an outer region of the first substrate and also includes the first transparent material. The first alignment mark is defined by surfaces of the first substrate that are arranged between an uppermost surface of the first substrate and a lowermost surface of the first substrate. The second substrate includes a second alignment mark on an outer region of the second substrate. The second alignment mark directly underlies the first alignment mark, and the bonding structure is arranged directly between the first alignment mark and the second alignment mark.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming an alignment mark in a material layer, wherein the alignment mark has a step sidewall in the material layer, and the step sidewall of the alignment mark has a floor surface portion; forming a feature material over the material layer; and performing a planarization process at least on the feature material, wherein the planarization process stops at a level higher than the floor surface portion of the step sidewall of the alignment mark.

Abstract: A laser processing apparatus includes a laser light output section, a laser light scanning section, a distance measurement light emitting section which emits distance measurement light, a pair of light receiving elements which receives the distance measurement light emitted from the distance measurement light emitting section and reflected by the workpiece, optical axes of the pair of light receiving elements being arranged inside the housing so as to sandwich an optical axis of the distance measurement light emitting section, a distance measuring section which measures a distance to the surface of the workpiece, and a light receiving lens which is arranged such that each of the optical axes of the pair of light receiving elements passes through the light receiving lens, and condenses the distance measurement light that has been reflected by the workpiece on respective light receiving surfaces of the pair of light receiving elements.

Abstract: A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.

Abstract: A printed circuit board includes: a base substrate; a pad region having a plurality of pad patterns disposed on one surface of the base substrate; and a dummy region having a plurality of conductive dummy patterns separated from the plurality of pad patterns to be disposed on the one surface of the base substrate. The pad region includes a first edge region, and a second edge region disposed in a diagonal direction of the first edge region on the one surface of the base substrate. The dummy region includes a third edge region, and a fourth edge region disposed in a diagonal direction of the third edge region on the one surface of the base substrate.

Abstract: One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.

Abstract: A semiconductor module includes a semiconductor device having a first land, a second land, and a third land, a wiring board having a substrate, and a fourth land, a fifth land, and a sixth land disposed on the main surface of the substrate, a chip component having a first electrode and a second electrode disposed across a distance in the longitudinal direction and being disposed between the wiring board and the semiconductor device, a first solder joint for bonding the first land, the fourth land, and the first electrode, a second solder joint for bonding the second land, the fifth land, and the second electrode, and a third solder joint for bonding the third land and the sixth land. The volume of the first solder joint and the volume of the second solder joint are each larger than the volume of the third solder joint.

Abstract: According to one embodiment, a template includes an alignment mark. The alignment mark includes first marks arranged at a first pitch in a first direction and second marks arranged at a second pitch in the first direction. At least one of the first marks includes a first region and a third region. At least one of the second marks includes a second region and the third region. The first region has first patterns arranged in a line-and-space form in the first direction. The second region has second patterns arranged in a line-and-space form in a second direction orthogonal to the first direction.

Abstract: Apparatuses including structures in scribe lines are described. An example apparatus includes: a first chip and a second chip; a scribe region between the first chip and the second chip; a crack guide region in the scribe region, the crack guide region including a dicing line along which the first chip and the second chip are to be divided; and a structure disposed in the crack guide region and extending along the dicing line.

Abstract: A layout structure of flexible circuit board includes a flexible substrate, a chip and a circuit layer. A chip mounting area and a circuit area are defined on a top surface of the flexible substrate. The chip is mounted on the chip mounting area, a space exists between a first bump and a second bump of the chip, and there are no additional bumps between the first and second bumps. A first inner lead, a second inner lead, a first dummy lead and a second dummy lead of the circuit layer are located on the chip mounting area. The first and second inner leads are electrically connected to the first and second bumps respectively. The first dummy lead is connected to the first inner lead and adjacent to the first bump, and the second dummy lead is connected to the second inner lead and adjacent to the second bump.

Abstract: A method for securing and verifying semiconductor wafers during fabrication includes receiving a semiconductor wafer after a layer of features has been patterned thereon. At least one security mark is formed at one or more locations embedded within a backside of the semiconductor wafer by implanting an inert species at the one or more locations. At a subsequent point in fabrication and/or after fabrication of the semiconductor wafer has completed the backside of the wafer is inspected for detection of the at least one security mark. If the at least one security mark is not detected at an expected location within the backside of the semiconductor wafer a determination is made that the semiconductor wafer has been compromised.

Abstract: A semiconductor stack, including a carrier and a semiconductor device arranged above the carrier; non-releasable interconnections electrically and mechanically connecting the semiconductor device and the carrier; a first contact on at least one of the carrier or the semiconductor device: a second contact on at least one of the carrier or the semiconductor device; an electrical connection structure electrically conductively coupling the first contact and the second contact with each other via at least one non-releasable interconnection of the non-releasable interconnections; and wherein the electrical connection structure comprises a plurality of test diode circuits integrated in at least one of the carrier and the semiconductor device, wherein each of the test diode circuits comprises one or more diodes.

Abstract: A circuit board includes an interconnect and an insulating layer that covers the interconnect. The interconnect includes a first interconnect that is formed to serve as a recognition mark of which planar shape is a predetermined shape. The insulating layer has a through-hole of which planar shape is variant and that penetrates the insulating layer in a thickness direction of the insulating layer such that an entire upper surface of the first interconnect is exposed. The through-hole includes a first through-hole of which planar shape is a predetermined shape and that penetrates the insulating layer in the thickness direction such that the entire upper surface of the first interconnect is exposed and a second through-hole that serves as part of an inner wall surface of the first through-hole and that penetrates the insulating layer in the thickness direction.

Abstract: A method for manufacturing an electronic device includes the following steps. A substrate including a first region and a second region is provided. A seed layer is formed on the substrate. A circuit structure layer is formed on the seed layer, and the circuit structure layer has a plurality of first circuit structures disposed on the first region and a plurality of second circuit structures disposed on the second region. The first circuit structures and the second circuit structures are electrically connected through the seed layer. A circuit test process is performed and includes applying a predetermined voltage to the second circuit structures to test the first circuit structures to determine whether the first circuit structures are normal or not.

Abstract: A method for determining overlay measurements includes orienting a wafer to align portions of lines of a pattern of an overlay mark with a direction in which a source emits light at the wafer and align other portions of the lines of the pattern to extend in a direction perpendicular to the direction in which the illumination source emits light at the wafer. The method includes capturing at least one image of the wafer via an imager sensor. The method also includes determining contrasts of regions of the overlay mark and determining a location of the overlay mark. Overlay marks include a pattern defining an array of columns. Each column includes a set of continuous lines oriented parallel to each other and extending in a first direction within a first region of a column and extending in a second different direction in a second region of the column.

Abstract: A die-to-die voltage sharing process that may be implemented to overcome a charge pump failure on a memory die of a non-volatile storage device. When a charge pump failure is detected, a controller causes another memory die with a functional charge pump to generate and supply a voltage to the memory die with the failed charge pump. When the voltage is received by the memory die with the failed charge pump, the voltage may be used to perform a requested memory operation.

Abstract: Disclosed is a chip component including a substrate having a first surface and a second surface on an opposite side from the first surface, and a third surface connecting the first surface and the second surface to each other, an external surface resin configured to cover at least the third surface of the substrate, and a terminal electrode formed on the first surface of the substrate and exposed from the external surface resin. A recessed portion is formed in an end portion of the third surface of the substrate, the end portion being on the first surface side. The external surface resin is embedded in the recessed portion.

Abstract: An organic light emitting display device includes a substrate having a display area displaying an image and a non-display area surrounding the display area; a camera disposition area provided within the display area; a panel identification area provided in the non-display area; and an upper protective layer covering the camera disposition area and the panel identification area.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a device region, an inner ring surrounding the device region, an outer ring surrounding the inner ring, a first corner area between an outer corner of the inner ring and an inner corner of the outer ring, and a second corner area disposed at an outer corner of the outer ring. The first corner area includes a first active region including a channel region and a source/drain region, a first gate structure over the channel region of the first active region, and a first source/drain contact over the source/drain region of the first active region. The first source/drain contact continuously extends from a first edge of the first corner area to a second edge of the first corner area.

Abstract: A method of forming a semiconductor device includes: forming first electrical components in a substrate in a first device region of the semiconductor device; forming a first interconnect structure over and electrically coupled to the first electrical components; forming a first passivation layer over the first interconnect structure, the first passivation layer extending from the first device region to a scribe line region adjacent to the first device region; after forming the first passivation layer, removing the first passivation layer from the scribe line region while keeping a remaining portion of the first passivation layer in the first device region; and dicing along the scribe line region after removing the first passivation layer.

Abstract: Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.

Abstract: Embodiments of the disclosure provide a crack detecting and monitoring system, including: a plurality of electrically conductive structures extending about a protective barrier formed in an inactive region of an integrated circuit (IC), wherein an active region of the IC is enclosed within the protective barrier; and a plurality of stages of sensing circuits connected in series for sensing a change in an electrical characteristic of each of the plurality of structures and for receiving an enable signal, wherein each sensing circuit is coupled to a respective structure of the plurality of structures, the change in the electrical characteristic indicating damage to the respective structure, wherein each sensing circuit includes a circuit for selectively generating the enable signal for a next sensing circuit in the plurality of stages of sensing circuits.

Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method comprises forming a plurality of semiconductor devices over a central region of a semiconductor wafer. The semiconductor wafer comprises a peripheral region laterally surrounding the central region and a circumferential edge disposed within the peripheral region. The semiconductor wafer comprises a notch disposed along the circumferential edge. Forming a stack of inter-level dielectric (ILD) layers over the semiconductor devices and laterally within the central region. Forming a bonding support structure over the peripheral region such that the bonding support structure comprises a bonding structure notch disposed along a circumferential edge of the bonding support structure. Forming the bonding support structure includes disposing the semiconductor wafer over a lower plasma exclusion zone (PEZ) ring that comprises a PEZ ring notch disposed along a circumferential edge of the lower PEZ ring.

Abstract: The present disclosure provides a system and a method for controlling a semiconductor manufacturing apparatus. The system includes an inspection unit capturing at least one image of a wafer, a sensor interface generating at least one input signal for a database server, and a control unit. The control unit includes a front-end subsystem, a calculation subsystem, and a message and tuning subsystem. The front-end subsystem receives the at least one input signal from the database server and performs a front-end process to generate a data signal. The calculation subsystem performs an artificial intelligence analytical process to determine, according to the data signal, whether damage marks have been caused by the semiconductor manufacturing apparatus and to generate an output signal. The message and tuning subsystem generates an alert signal and a feedback signal according to the output signal and transmits the alert signal to a user.

Abstract: Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure incudes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

Abstract: A method for forming a semiconductor structure includes the steps of providing a substrate having a device region and an alignment mark region, forming a first dielectric layer on the substrate and a second dielectric layer on the first dielectric layer, forming a conductive via in the second dielectric layer on the device region, forming a mask layer on the second dielectric layer, etching the second dielectric layer and the first dielectric layer through an opening of the mask layer on the alignment mark region to form a first trench through the second dielectric layer and an upper portion of the first dielectric layer and a plurality of second trenches in the first dielectric layer directly under the first trench. Afterward, a memory stack structure is formed on the second dielectric layer, covering the conductive via and filling into the first trench and the second trenches.

Abstract: A method for securing and verifying semiconductor wafers during fabrication includes receiving a semiconductor wafer after a layer of features has been patterned thereon. At least one security mark is formed at one or more locations embedded within a backside of the semiconductor wafer by implanting an inert species at the one or more locations. At a subsequent point in fabrication and/or after fabrication of the semiconductor wafer has completed the backside of the wafer is inspected for detection of the at least one security mark. If the at least one security mark is not detected at an expected location within the backside of the semiconductor wafer a determination is made that the semiconductor wafer has been compromised.

Abstract: A card-marking system is provided for personalizing plastic cards such as chip cards or identity cards by laser marking. A corresponding method for automated detection of an optimized setting includes a vision sub-system setting process for setting a vision sub-system of the card marking system and a subsequent marking sub-system setting process for setting a marking sub-system of the card-marking system. The card-marking system is designed to carry out the above method fully or semi-automatedly and to this end can include a corresponding computer program controlling the method.

Abstract: A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

Abstract: A method and an apparatus for bonding semiconductor substrates are provided. The method includes at least the following steps. A first position of a first semiconductor substrate on a first support is gauged by a gauging component embedded in the first support and a first sensor facing towards the gauging component. A second semiconductor substrate is transferred to a position above the first semiconductor substrate by a second support. A second position of the second semiconductor substrate is gauged by a second sensor mounted on the second support and located above the first support. The first semiconductor substrate is positioned based on the second position of the second semiconductor substrate. The second semiconductor substrate is bonded to the first semiconductor substrate.

Abstract: A method for manufacturing a display device includes the steps of: providing a first display panel including a first indicia and a second indicia; disposing a first window including a third indicia on the first display panel; identifying a position of the first indicia and a position of the third indicia; aligning the first display panel and the first window using the positions of the first and third indicia; coupling the first window and the first display panel to each other; identifying a coupled position defined by positions of the second and third indicia of the first display panel and the first window; correcting a position of a second display panel or a position of a second window based on the coupled position; and coupling the second window and the second display panel to each other.

Abstract: Disclosed are semiconductor devices and their fabrication methods. The method includes forming an etching target on a substrate including cell and key regions, forming lower and upper mask layers on the etching target, performing photolithography to form an upper mask pattern including a hole on the cell region, a preliminary key pattern on the key region, a bar pattern on the key region, and a trench between the preliminary key pattern and the bar pattern, forming pillar and dam patterns filling the hole and the trench, performing photolithography to remove the upper mask pattern except for the bar pattern, using the pillar pattern, the dam pattern, and the bar pattern as an etching mask to form a lower mask pattern, and using the lower mask pattern as an etching mask to form an etching target pattern on the cell region and a key pattern on the key region.

Abstract: High performance modules for use in System-in-Package (SIP) devices, and methods of manufacture for such modules and SIPs. The modules employ one or more interposer substrates on which high performance components and/or devices are operatively mounted and interconnected.

Abstract: A circuit board tape includes substrate units each including a sprocket-hole region, a layout region and a joining mark. There are odd and more than three sprocket holes on the sprocket-hole region. An imaginary line extended from the joining mark is extended to between a first layout and a second layout located on the layout region. The amount of the sprocket holes between the imaginary lines of the adjacent substrate units is odd. The circuit board tape is cut along the imaginary lines of the different substrate units so as to remove the defective substrate unit from the circuit board tape and divide the circuit board tape into a front tape and a rear tape. After joining the front and rear tapes, the region where a first layout on the front tape and a second layout on the rear tape are located is defined as a combined layout region.

Abstract: Embodiments of the present disclosure provide an alignment mark evaluation method and an alignment mark evaluation system. The alignment mark evaluation method includes: setting a process step code of a wafer with an alignment mark to be evaluated as an evaluation code; obtaining a current process step code of the wafer; if it is detected that the current process step code is the evaluation code, switching a step to be executed to an alignment mark evaluation step; and executing the alignment mark evaluation step to evaluate the alignment mark to be evaluated.

Abstract: A chip on film package structure including a flexible film, a patterned metal layer, a chip, a patterned solder resist layer, and a code-included pattern is provided. The flexible film comprises a chip mounting region and a peripheral region surrounding the chip mounting region. The patterned metal layer disposed on the flexible film. The chip mounted on the chip mounting region and electrically connected to the patterned metal layer. The patterned solder resist layer exposing the chip mounting region and covering a part of the patterned metal layer. The code-included pattern disposed on the peripheral region of the flexible film. The code-included pattern comprises a plurality of machine-readable data. A method for reading a code-included pattern on a package structure is also provided.

Abstract: Disclosed herein are stacked transistors with different gate lengths in different device strata, as well as related methods and devices. In some embodiments, an integrated circuit structure may include stacked strata of transistors, with two different device strata having different gate lengths.

Abstract: A method of testing a semiconductor package including a plurality of semiconductor chips includes sensing electrical signals respectively output from a plurality of semiconductor chip groups each representing a combination of at least two semiconductor chips among the plurality of semiconductor chips, obtaining amplitudes of electrical signals respectively output from the plurality of semiconductor chips based on the plurality of sensed electrical signals, and outputting a test result for the semiconductor package by using the plurality of obtained electrical signals.

Abstract: Techniques and architecture are disclosed for a system that includes a fuze at a leading end of a projectile body and a fuze setter configured to engage the fuze and to program the same prior to launch. The system, in one example, includes a plurality of electrical contact pads on an exterior surface of a fuze radome housing and a plurality of electrical contact pins on the fuze setter. The electrical contact pads are arranged in a rotationally symmetric pattern that enables an electrical interface to be formed with the electrical contact pins, regardless of the rotational orientation of the fuze. Commutation is performed to rotate signals to the electrical contact pins instead of requiring that the fuze be physically rotated to bring the electrical contact pads into alignment with the electrical contact pins.

Abstract: A device including a III-N material is described. The device includes a transistor structure having a first layer including a first group III-nitride (III-N) material, a polarization charge inducing layer above the first layer, the polarization charge inducing layer including a second III-N material, a gate electrode above the polarization charge inducing layer and a source structure and a drain structure on opposite sides of the gate electrode. The device further includes a plurality of peripheral structures adjacent to transistor structure, where each of the peripheral structure includes the first layer, but lacks the polarization charge inducing layer, an insulating layer above the peripheral structure and the transistor structure, wherein the insulating layer includes a first dielectric material. A metallization structure, above the peripheral structure, is coupled to the transistor structure.