Including Semiconductor Components With At Least One Potential Barrier, Surface Barrier, Or Recombination Zone Adapted For Light Emission (epo) Patents (Class 257/E27.119)
  • Publication number: 20100051912
    Abstract: This invention generally relates to improved methods of fabricating molecular electronic devices, in particular organic electronic devices such as organic light emitting diodes (OLEDs) by droplet deposition techniques such as ink jet printing. The invention also relates to molecular device substrates fabricated by and/or use in such methods. We describe an optical or optoelectronic device comprising a substrate and a plurality of discrete bank structures disposed on the substrate, wherein: each bank structure defines the perimeter of at least one well; one or more of a charge transporting, charge injecting, light-filtering and light-emitting material is disposed in the well; and at least one bank structure defines the perimeter of at least one well and does not extend to the perimeter of any adjacent well. Thus in embodiments no part of said perimeter defines the bank of more than one well.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 4, 2010
    Applicant: CAMBRIDEG DISPLAY TECHNOLOGY LIMITED
    Inventor: Haydn Gregory
  • Patent number: 7511301
    Abstract: To provide an active matrix liquid crystal display unit in which a wiring break at the intersection of drain wiring and gate wiring is prevented with reliability. One or more recesses extending along drain wiring and having a depth equal to or greater than the width of the drain wiring are formed in at least one side of gate wiring at an area near an intersection of the gate wiring and the drain wiring. Furthermore, the gate wiring is composed of two layers of Mo and Al, for example, and the side faces of the gate wiring are tapered. The recesses having a sufficient depth formed in the gate wiring at the area near the intersection with the drain wiring adequately elongate the etchant penetration path.
    Type: Grant
    Filed: December 1, 2004
    Date of Patent: March 31, 2009
    Assignee: NEC LCD Technologies, Ltd.
    Inventor: Shigeru Kimura
  • Publication number: 20080197342
    Abstract: A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting element and a switch element. The light-emitting element includes a first electrode disposed on the recess region, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The switch element is disposed on the substrate and electrically connected to the light-emitting element. The bottom surface of the recess region is lower than the bottom surface of the active layer.
    Type: Application
    Filed: February 15, 2007
    Publication date: August 21, 2008
    Applicants: CHI MEI EL Corp., CHI MEI OPTOELECTRONICS CORP.
    Inventors: Seok-Woon Lee, Sung-Soo Park, Biing-Seng Wu
  • Publication number: 20080142807
    Abstract: An organic light emitting display apparatus with reduced infiltration of external moisture and oxygen comprises: a substrate comprising a plurality of TFT devices; and a display region formed on the substrate; wherein the display region comprises a base layer which comprises first electrodes electrically connected to the TFT devices and defining a pixel region, an organic layer formed on the base layer, and a second electrode layer formed in a structure covering the base layer and organic layer completely.
    Type: Application
    Filed: November 5, 2007
    Publication date: June 19, 2008
    Inventors: Won-Kyu Choe, Ji-Yeon Baek
  • Publication number: 20080136986
    Abstract: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
    Type: Application
    Filed: June 26, 2007
    Publication date: June 12, 2008
    Inventors: Min Joo Kim, Ho Cheol Kang, Kyo Seop Choo
  • Patent number: 7365368
    Abstract: To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: April 29, 2008
    Assignee: Seiko Epson Corporation
    Inventors: Tetsuo Nishida, Hajime Onishi
  • Patent number: 7205565
    Abstract: A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above.
    Type: Grant
    Filed: November 22, 2004
    Date of Patent: April 17, 2007
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Choong-Youl Im, Tae-wook Kang, Chang-yong Jeong
  • Patent number: 7187008
    Abstract: A semiconductor driver circuit has a plurality of output bumps that are connected to respective electrodes for energizing electroluminescent devices by electric current supplied through the electrodes. The output bumps are arranged in a plurality of output bump rows. Each of the output bump rows includes a plurality of the output bumps.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: March 6, 2007
    Assignee: Kabushiki Kaisha Toyota Jidoshokki
    Inventor: Toshiki Inoue
  • Publication number: 20030201550
    Abstract: A device for producing a color filter includes a part for storing a solution in which a light transmitting material is dissolved, a part for feeding the solution to a tip of a flying electrode, a part for applying a voltage between the tip of the flying electrode and an electro-conductive material of a color filter substrate so as to form an electrostatic field, and a part for relatively shifting the tip of the flying electrode and the color filter substrate to a perpendicular direction and to a horizontal direction. The solution is formed into a stringy beam which is let to fly onto the color filter substrate so that the solution is injected into a concavity formed and surrounded by a black matrix on the color filter substrate, and forms red, green and blue light emitting layers.
    Type: Application
    Filed: June 3, 2003
    Publication date: October 30, 2003
    Inventors: Seiji Yonekura, Yoshinobu Fukano, Mamoru Okano, Yasuo Imanishi, Sukekazu Aratani, Yoshiharu Nagae