Controllable By Thermal Signal (e.g., Ir) (epo) Patents (Class 257/E29.347)
  • Patent number: 9040912
    Abstract: An infrared sensing element is provided and includes a substrate, a supporting electrical insulating layer formed on the substrate; a first electrode formed on the supporting electrical insulating layer, a pyroelectric layer formed on the first electrode, and a second electrode formed on the pyroelectric layer. The pyroelectric layer has a light receiving area of 1×102 to 1×104 ?m2, has a thickness of 0.8 to 10 ?m, and contains therein a compound expressed as Pb(ZrxTi1-x)O3, where 0.57<x<0.93 as a principal component.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: May 26, 2015
    Assignee: SONY CORPORATION
    Inventors: Hidetoshi Kabasawa, Minoru Wakabayashi
  • Patent number: 8981538
    Abstract: The reliability of a semiconductor device is improved. A semiconductor device has a first metal plate and a second metal plate electrically isolated from the first metal plate. Over the first metal plate, a first semiconductor chip including a transistor element formed thereover is mounted. Whereas, over the second metal plate, a second semiconductor chip including a diode element formed thereover is mounted. Further, the semiconductor device has a lead group including a plurality of leads electrically coupled with the first semiconductor chip or the second semiconductor chip. The first and second metal plates are arranged along the X direction in which the leads are arrayed. Herein, the area of the peripheral region of the first semiconductor chip in the first metal plate is set larger than the area of the peripheral region of the second semiconductor chip in the second metal plate.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: March 17, 2015
    Assignee: Renesas Electronics Corporation
    Inventors: Tadatoshi Danno, Toshiyuki Hata, Yuichi Machida
  • Patent number: 8963120
    Abstract: An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: February 24, 2015
    Assignees: OSRAM Opto Semiconductors GmbH, The University Court of the University of St. Andrews
    Inventors: Krister Bergenek, Christopher Wiesmann, Thomas F. Krauss
  • Patent number: 8941193
    Abstract: A simple and cost-effective manufacturing method for hybrid integrated components including at least one MEMS element, a cap for the micromechanical structure of the MEMS element, and at least one ASIC substrate, using which a high degree of miniaturization may be achieved. The micromechanical structure of the MEMS element and the cap are manufactured in a layered structure, proceeding from a shared semiconductor substrate, by applying at least one cap layer to a first surface of the semiconductor substrate, and by processing and structuring the semiconductor substrate proceeding from its other second surface, to produce and expose the micromechanical MEMS structure. The semiconductor substrate is then mounted with the MEMS-structured second surface on the ASIC substrate.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: January 27, 2015
    Assignee: Robert Bosch GmbH
    Inventors: Jens Frey, Frank Fischer
  • Patent number: 8941205
    Abstract: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.
    Type: Grant
    Filed: October 8, 2012
    Date of Patent: January 27, 2015
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Christian Rivero, Pascal Fornara
  • Patent number: 8916948
    Abstract: A pyroelectric detector includes a support member, a capacitor and a fixing part. The support member includes a first side and a second side opposite from the first side, with the first side facing a cavity. The capacitor includes a pyroelectric body between a first electrode and a second electrode such that an amount of polarization varies based on a temperature. The capacitor is mounted and supported on the second side of the support member with the first electrode being disposed on the second side of the support member. The fixing part supports the support member, with the cavity being formed between the support member and the fixing part.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: December 23, 2014
    Assignee: Seiko Epson Corporation
    Inventors: Takafumi Noda, Jun Takizawa
  • Patent number: 8907285
    Abstract: A pyroelectric detector includes a pyroelectric detection element, a support member, a fixing part and a first reducing gas barrier layer. A first side of the support member faces a cavity and the pyroelectric detection element is mounted and supported on a second side opposite from the first side. An opening part communicated with the cavity is formed on a periphery of the support member in plan view from the second side of the support member. The fixing part supports the support member. The first reducing gas barrier layer covers a first surface of the support member on the first side, a side surface of the support member facing the opening part, and a part of a second surface of the support member on the second side and the pyroelectric detection element exposed as viewed from the second side of the support member.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: December 9, 2014
    Assignee: Seiko Epson Corporation
    Inventors: Takafumi Noda, Jun Takizawa
  • Patent number: 8884289
    Abstract: An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: November 11, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Pascal Fornara, Christian Rivero, Antonio di-Giacomo
  • Patent number: 8829639
    Abstract: An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 ?m.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: September 9, 2014
    Assignees: ST-Ericsson (Grenoble) SAS, Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Vincent Remondière, Guillaume Savelli, Marc Plissonnier, Denis Cottin
  • Patent number: 8802963
    Abstract: A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An MxV2O5 crystal is selectively precipitated in vanadium-based glass, wherein M is one metal element selected from the group consisting of iron, arsenic, antimony, bismuth, tungsten, molybdenum, manganese, nickel, copper, silver, an alkali metal and an alkaline earth metal, and 0<x<1.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: August 12, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Tadashi Fujieda, Takashi Naito, Takuya Aoyagi
  • Patent number: 8766394
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: July 1, 2014
    Assignee: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Patent number: 8728846
    Abstract: A thermoelectric device is disclosed which includes metal thermal terminals protruding from a top surface of an IC, connected to vertical thermally conductive conduits made of interconnect elements of the IC. Lateral thermoelectric elements are connected to the vertical conduits at one end and heatsinked to the IC substrate at the other end. The lateral thermoelectric elements are thermally isolated by interconnect dielectric materials on the top side and field oxide on the bottom side. When operated in a generator mode, the metal thermal terminals are connected to a heat source and the IC substrate is connected to a heat sink. Thermal power flows through the vertical conduits to the lateral thermoelectric elements, which generate an electrical potential. The electrical potential may be applied to a component or circuit in the IC. The thermoelectric device may be integrated into an IC without adding fabrication cost or complexity.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: May 20, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: Barry Jon Male, Philip L. Hower
  • Patent number: 8704327
    Abstract: An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: April 22, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Christian Rivero, Pascal Fornara, Antonio di-Giacomo
  • Publication number: 20140091422
    Abstract: A device and a method of forming the same are disclosed. The device comprises a substrate and a thin film. The substrate is characterized by a first coefficient of thermal expansion. The thin film is attached to a surface of the substrate, and is characterized by a second coefficient of thermal expansion. The thin film includes first and second layers in states of compression, and a third layer in a state of tension, the third layer being positioned between the first and second layers. The thin film is in a net state of tension within a temperature range.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 3, 2014
    Applicant: Agilent Technologies, Inc.
    Inventor: Phillip W. Barth
  • Patent number: 8586395
    Abstract: Here, an apparatus is provided. The apparatus generally comprises a substrate and a thermopile. The thermopile includes a cavity that is etched into the substrate, a functional area that is formed over the substrate (where the cavity is generally coextensive with the functional area), and a metal ring formed over the substrate along the periphery of the functional area (where the metal ring is thermally coupled to the substrate).
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: November 19, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Walter Meinel, Kalin V. Lazarov
  • Publication number: 20130298963
    Abstract: A device, method and process of fabricating an interdigitated multicell thermo-photo-voltaic component that is particularly efficient for generating electrical energy from photons in the red and near-infrared spectrum received from a heat source in the near field. Where the absorbing region is germanium, the device is capable of generating electrical energy by absorbing photon energy in the greater than 0.67 electron volt range corresponding to radiation in the infrared and near-infrared spectrum. Use of germanium semiconductor material provides a good match for converting energy from a low temperature heat source. The side that is opposite the photon receiving side of the device includes metal interconnections and dielectric material which provide an excellent back surface reflector for recycling below band photons back to the emitter. Multiple cells may be fabricated and interconnected as a monolithic large scale array for improved performance.
    Type: Application
    Filed: May 11, 2012
    Publication date: November 14, 2013
    Applicant: MTPV, LLC.
    Inventors: Paul Greiff, Jose M. Borrega
  • Publication number: 20130264610
    Abstract: A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops.
    Type: Application
    Filed: April 6, 2012
    Publication date: October 10, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun CHEN, Chia-Hua CHU, Chung-Hsien LIN, Jui-Cheng HUANG
  • Patent number: 8541861
    Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: September 24, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Atsuta, Hideyuki Funaki, Keita Sasaki
  • Publication number: 20130234270
    Abstract: In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 12, 2013
    Applicant: ROBERT BOSCH GMBH
    Inventors: Gary Yama, Fabian Purkl, Matthieu Liger, Matthias Illing
  • Publication number: 20130134530
    Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.
    Type: Application
    Filed: November 24, 2011
    Publication date: May 30, 2013
    Inventors: Thoralf KAUTZSCH, Boris BINDER, Torsten HELM, Stefan KOLB, Marc PROBST, Uwe RUDOLPH
  • Publication number: 20130126998
    Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 ?m to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 23, 2013
    Applicant: General Electric Company
    Inventors: Arie Shahar, Eliezer Traub, Diego Sclar, Peter Rusian
  • Patent number: 8426864
    Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: April 23, 2013
    Assignee: Panasonic Corporation
    Inventors: Koji Tsuji, Yosuke Hagihara, Naoki Ushiyama
  • Patent number: 8420987
    Abstract: Provided are a thermistor with 3 terminals, a thermistor-transistor including the thermistor, a circuit for controlling heat of a power transistor using the thermistor-transistor, and a power system including the circuit. The circuit includes: a thermistor-transistor which comprises a thermistor having a resistance decreasing with an increase in temperature and a control transistor connected to the thermistor; and at least one power transistor which is connected to a driving device to control a supply of power to the driving device, wherein the thermistor-transistor is adhered to one of a surface and a heat-emitting part of the at least one power transistor and is connected to one of a base, a gate, a collector, and a drain of the at least one power transistor to decrease or block a current flowing in the at least one power transistor when the temperature of the at least one power transistor rises, so as to prevent the power transistor from heating up.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: April 16, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Bongjun Kim, Giwan Seo, Hyun Tak Kim
  • Patent number: 8415760
    Abstract: A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: April 9, 2013
    Assignee: Robert Bosch GmbH
    Inventors: Thorsten Mueller, Ando Feyh
  • Publication number: 20130062722
    Abstract: In various embodiments, a chip module may include a first chip; and a leadframe with a first leadframe area and a second leadframe area, wherein the first leadframe area is electrically insulated from the second leadframe area; wherein the first chip is arranged at least partially on the first leadframe area and at least partially on the second leadframe area.
    Type: Application
    Filed: September 12, 2012
    Publication date: March 14, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Josef Hoeglauer, Ralf Otremba, Xaver Schloegel
  • Patent number: 8390113
    Abstract: A pressing member is prevented from being damaged by heat, heat dissipation through the pressing member on the higher-temperature side and reduction in thermoelectric conversion efficiency due to it are suppressed, and good electrical conduction is achieved even if thermoelectric conversion elements and electrodes are not cemented through a binder. A lower-temperature side electrode 6 is projecting toward a higher-temperature side substrate 8 and the lower-temperature side electrode 6 is formed with slope faces 6a, 6b, and an angle ? of each of the slope face to a surface of a lower-temperature side substrate 7 is an acute angle.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: March 5, 2013
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yoshinari Sawabe, Yuichi Hiroyama
  • Publication number: 20130037904
    Abstract: An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition. The object is achieved with a PTC element including at least two metal electrodes and a BaTiO3 system semiconductor ceramic composition arranged between the electrodes, in which, in the semiconductor ceramic composition, a portion of Ba in the BaTiO3 system is substituted by Bi—Na and a semiconductorizing element, vacancies are formed on Bi sites by depleting at least a portion of Bi, and oxygen defects are formed on a crystal thereof. Since the PTCR characteristic at the inside of the semiconductor ceramic composition is negligibly weak in comparison with the PTCR characteristic at the interface between the semiconductor ceramic composition and the electrodes, the PTC element can be made thinner.
    Type: Application
    Filed: April 6, 2011
    Publication date: February 14, 2013
    Applicant: HITACHI METALS, LTD.
    Inventors: Takesha Shimada, Kentaro Ino, Toshiki Kida
  • Publication number: 20130026597
    Abstract: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.
    Type: Application
    Filed: October 8, 2012
    Publication date: January 31, 2013
    Applicant: STMICROELECTRONICS (ROUSSET) SAS
    Inventor: STMICROELECTRONICS (ROUSSET) SAS
  • Publication number: 20130026592
    Abstract: A method of forming a focal plane array by: forming a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer, the sensing material being a thermistor material defining at least one pixel; providing supporting legs for the pixel within the sacrificial layer, covering them with a further sacrificial layer and forming first conductive portions in the surface of the sacrificial layer that are in contact with the supporting legs; forming a second wafer having read-out integrated circuit (ROIC), the second wafer being covered by another sacrificial layer, into which is formed second conductive portions in contact with the ROIC; bringing the sacrificial oxide layers of the first wafer and second wafer together such that the first and second conductive portions are aligned and bonding them together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; and removing the sacrificial l
    Type: Application
    Filed: March 1, 2011
    Publication date: January 31, 2013
    Applicant: SensoNor Technologies AS
    Inventors: Adriana Lapadatu, Gjermund Kittilsland
  • Patent number: 8362583
    Abstract: A pyroelectric detector includes a pyroelectric detection element mounted on a first side of a support member with a second side facing a cavity. The pyroelectric detection element has a capacitor including a first electrode, a pyroelectric body and a second electrode, and an interlayer insulation layer forming first and second contact holes passing respectively through to the first and second electrodes. First and second plugs are respectively embedded in the first and second contact holes, with first and second electrode wiring layers are respectively connected to the first and second plugs. A thermal conductivity of material of the second electrode wiring layer is lower than a thermal conductivity of material of a portion of the second electrode connected to the second plug.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: January 29, 2013
    Assignee: Seiko Epson Corporation
    Inventor: Takafumi Noda
  • Patent number: 8362584
    Abstract: A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support part, the support member, and the pyroelectric detection element are laminated in this order in a first direction with the cavity being formed between the support part and the support member. The support member has at least a first insulation layer on the first side contacting the first electrode, with the first insulation layer having a hydrogen content rate smaller than a hydrogen content rate of a second insulation layer positioned further in a second direction than the first insulation layer, the second direction being opposite the first direction.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: January 29, 2013
    Assignee: Seiko Epson Corporation
    Inventor: Takafumi Noda
  • Publication number: 20130020670
    Abstract: A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element ? having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element ? in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from ?50° C. to 1050° C.
    Type: Application
    Filed: April 27, 2011
    Publication date: January 24, 2013
    Applicants: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, DENSO CORPORATION
    Inventors: Tsunenobu Hori, Kaoru Kuzuoka, Chiaki Ogawa, Motoki Satou, Katsunori Yamada, Takao Kobayashi
  • Publication number: 20130015548
    Abstract: To provide an integrated circuit with functionality under environment with temperature lower than a working condition, the integrated circuit is designed to include a heating element incorporated with signal pins on a carrier, such as a lead frame, that supports a chip die and controlled by a heating control unit to increase temperature of the chip die. The heating control unit provides voltage for the heating element when a detecting unit detects that the temperature of the chip die falls below a predetermined temperature and a power control unit provide operation power for the chip die when the temperature of the chip die detected by the detecting unit reaches or falls above the predetermined temperature.
    Type: Application
    Filed: July 11, 2011
    Publication date: January 17, 2013
    Inventors: Hsieh-Chun Chen, Tsang-Yi Chen
  • Publication number: 20120319226
    Abstract: Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and tungsten, thereby providing a resistive heater and reducing deposition steps. Polyimide can be used for thermal isolation of the bimorph actuator and the substrate. For MEMS micromirror designs, the polyimide can also be used for thermal isolation between the bimorph actuator and the micromirror.
    Type: Application
    Filed: December 6, 2011
    Publication date: December 20, 2012
    Applicant: University of Florida Research Foundation, Incorporated
    Inventors: Sagnik Pal, Huikai Xie
  • Publication number: 20120248564
    Abstract: According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package.
    Type: Application
    Filed: March 30, 2011
    Publication date: October 4, 2012
    Applicant: INTERNATIONAL RECTIFIER CORPORATION
    Inventor: Henning M. Hauenstein
  • Publication number: 20120245724
    Abstract: Disclosed is a resonator made up of three sections (i.e., first, second and third sections) of a semiconductor layer. The second section has an end abutting the first section, a middle portion (i.e., an inductor portion) coiled around the first section and another end abutting the third section. The first and third sections exhibit a higher capacitance to the wafer substrate than the second section. Also disclosed are a process control system and method that incorporate one or more of these resonators. Specifically, during processing by a processing tool, wireless interrogation unit(s) detect the frequency response of resonator(s) in response to an applied stimulus. The detected frequency response is measured and used as the basis for making real-time adjustments to input settings on the processing tool (e.g., as the basis for making real-time adjustments to the temperature setting(s) of an anneal chamber).
    Type: Application
    Filed: March 21, 2011
    Publication date: September 27, 2012
    Applicant: International Business Machines Corporation
    Inventors: Mete Erturk, Ezra D.B. Hall, Kirk D. Peterson
  • Patent number: 8258597
    Abstract: A pyroelectric detector includes a support member, a capacitor and a fixing part. The support member includes a first side and a second side opposite from the first side, with the first side facing a cavity. The capacitor includes a pyroelectric body between a first electrode and a second electrode such that an amount of polarization varies based on a temperature. The capacitor is mounted and supported on the second side of the support member with the first electrode being disposed on the second side of the support member. A thermal conductance of the first electrode is less than a thermal conductance of the second electrode. The fixing part supports the support member.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: September 4, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Takafumi Noda, Jun Takizawa
  • Publication number: 20120217609
    Abstract: A semiconductor device includes a stacked body with a recessed gas passage formed therein, a heater disposed in the stacked body, the heater being exposed on a bottom surface of the gas passage, and a plurality of thermal sensors disposed in the stacked body in such a manner that the plurality of thermal sensors sandwich the heater therebetween in an extending direction of the gas passage, the plurality of thermal sensors being exposed on the bottom surface of the gas passage. An acceleration sensor having a high affinity to the ordinary semiconductor manufacturing process can be provided.
    Type: Application
    Filed: February 14, 2012
    Publication date: August 30, 2012
    Inventor: Akira TANABE
  • Publication number: 20120217608
    Abstract: An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 ?m.
    Type: Application
    Filed: July 26, 2010
    Publication date: August 30, 2012
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ST - ERICSSON (GRENOBLE) SAS
    Inventors: Vincent Remondière, Guillaume Savelli, Marc Plissonnier, Denis Cottin
  • Publication number: 20120211857
    Abstract: A pyroelectric detector includes a substrate, a support member and a pyroelectric detection element, which includes a capacitor, first and second reducing gas barrier layers, an insulating layer, a plug and a second electrode wiring layer. The first reducing gas barrier layer covers at least a second electrode and a pyroelectric body of the capacitor, and has a first opening that overlaps the second electrode in plan view. The insulating layer covers at least the first reducing gas barrier layer, and has a second opening that overlaps the first opening in plan view. The plug is disposed in the first and second openings and connected to the second electrode. The second electrode wiring layer is formed on the insulating layer and connected to the plug. The second reducing gas barrier layer is formed on the insulating layer and the second electrode wiring layer and covers at least the plug.
    Type: Application
    Filed: February 13, 2012
    Publication date: August 23, 2012
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Takafumi NODA
  • Publication number: 20120187519
    Abstract: A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane.
    Type: Application
    Filed: March 30, 2012
    Publication date: July 26, 2012
    Applicant: STMicroelectronics S.A.
    Inventor: Guillaume Bouche
  • Publication number: 20120181651
    Abstract: A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection.
    Type: Application
    Filed: January 13, 2012
    Publication date: July 19, 2012
    Applicant: NORTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventor: Yanfeng Jiang
  • Publication number: 20120176835
    Abstract: A disclosed temperature sensor includes a charge trap structure including a silicon oxide film formed on a substrate; an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof; and an electrode formed on the aluminum oxide film, wherein a flat band voltage of the charge trap structure is temperature dependent.
    Type: Application
    Filed: January 6, 2012
    Publication date: July 12, 2012
    Applicant: Tokyo Electron Limited
    Inventor: Yoshitsugu TANAKA
  • Publication number: 20120175687
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Application
    Filed: March 21, 2012
    Publication date: July 12, 2012
    Applicant: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Publication number: 20120163413
    Abstract: A semiconductor device, memory device, system, and method of using a stacked structure for stably transmitting signals among a plurality of semiconductor layers is disclosed. The device includes at least a first semiconductor chip including a first temperature sensor circuit configured to output first temperature information related to the first semiconductor chip, and at least one through substrate via.
    Type: Application
    Filed: July 6, 2011
    Publication date: June 28, 2012
    Inventors: Jung-sik Kim, Dong-hyuk Lee, Ho-cheol Lee, Jang-woo Ryu
  • Publication number: 20120161128
    Abstract: According to one embodiment, a die package is provided comprising a first die structure with a first plurality of switching elements wherein controlled current input terminals of the first plurality of switching elements are electrically coupled by a common contact region and wherein controlled current output terminals of the first plurality of switching elements are insulated from each other; a second die structure with a second plurality of switching elements wherein controlled current output terminals of the second plurality of switching elements are coupled by a common contact region and wherein controlled current input terminals of the second plurality of switching elements are insulated from each other; and wherein, for each of the first plurality of switching elements, the output terminal of the switching element is coupled with the input terminal of at least one switching element of the second plurality of switching elements.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 28, 2012
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Stefan Macheiner, Andreas Peter Meiser
  • Publication number: 20120161260
    Abstract: Measures are introduced to make possible a low-cost packaging of sensor chips having a media access. For this purpose, the sensor chip is first mounted on a substrate and is contacted. The sensor chip is then at least partially embedded in a molding compound. Finally, at least one portion of the media access is produced by the subsequent structuring of the molding compound.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 28, 2012
    Inventors: Uwe HANSEN, Lutz Rauscher
  • Publication number: 20120161273
    Abstract: A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An MxV2O5 crystal is selectively precipitated in vanadium-based glass, wherein M is one metal element selected from the group consisting of iron, arsenic, antimony, bismuth, tungsten, molybdenum, manganese, nickel, copper, silver, an alkali metal and an alkaline earth metal, and 0<x<1.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 28, 2012
    Inventors: Tadashi Fujieda, Takashi Naito, Takuya Aoyagi
  • Publication number: 20120139078
    Abstract: A sensor for detecting intensity of radiation such as of infrared radiation includes an ROIC substrate (9) and a resistance element (1) arranged at a distance of the surface of the ROIC substrate. The resistance element comprises one more semiconducting layers such as a silicon semiconducting layer and a semiconducting layer of a silicon-germanium alloy forming a heterojunction. The semiconducting layer or layers can be doped with one or more impurity dopants, the doping level or levels selected so that the layer retains the basic crystallographic properties of the respective material such as those of monosilicon or a monocrystalline silicon-germanium alloy. The impurity dopants are selected from the elements in groups IE, IV, and V, in particular among boron, aluminium, indium, arsenic, phosphorous, antimony, germanium, carbon and tin. The doping can be abrupt so that there is an interior layer inside said semiconducting layer or layers having a significantly higher doping level.
    Type: Application
    Filed: June 17, 2010
    Publication date: June 7, 2012
    Inventor: Gunnar Malm
  • Publication number: 20120126345
    Abstract: A MEMS device (20) with stress isolation includes elements (28, 30, 32) formed in a first structural layer (24) and elements (68, 70) formed in a second structural layer (26), with the layer (26) being spaced apart from the first structural layer (24). Fabrication methodology (80) entails forming (92, 94, 104) junctions (72, 74) between the layers (24, 26). The junctions (72, 74) connect corresponding elements (30, 32) of the first layer (24) with elements (68, 70) of the second layer (26). The fabrication methodology (80) further entails releasing the structural layers (24, 26) from an underlying substrate (22) so that all of the elements (30, 32, 68, 70) are suspended above the substrate (22) of the MEMS device (20), wherein attachment of the elements (30, 32, 68, 70) with the substrate (22) occurs only at a central area (46) of the substrate (22).
    Type: Application
    Filed: February 3, 2012
    Publication date: May 24, 2012
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventor: Aaron A. Geisberger