Device Being Sensitive To Very Short Wavelength (e.g., X-ray, Gamma-ray) (epo) Patents (Class 257/E31.092)
  • Patent number: 8791537
    Abstract: Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: July 29, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Issac Wing-Tak Chan, Chao-Chiun Liang, Heng-Yin Chen, Ming-Hua Yeh
  • Patent number: 8680642
    Abstract: A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: March 25, 2014
    Assignee: Sionyx, Inc.
    Inventors: Nathaniel J. McCaffrey, James E. Carey
  • Publication number: 20130341520
    Abstract: A radiation detector comprises a piece of semiconducting material. On its surface, a number of consecutive electrode strips are configured to assume electric potentials of sequentially increasing absolute value. A field plate covers the most of a separation between a pair of adjacent electrode strips and is isolated from the most of said separation by an electric insulation layer. A bias potential is coupled to said field plate so that attracts surface-generated charge carriers.
    Type: Application
    Filed: June 20, 2012
    Publication date: December 26, 2013
    Inventor: Pasi KOSTAMO
  • Patent number: 8324624
    Abstract: A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including a gate electrode, a source electrode, and a drain electrode, a first electrode connected to the drain electrode, a passivation layer formed over the gate line, the data line, the thin film transistor and the first electrode, a photoconductor formed over the passivation layer and connected to the first electrode, and a second electrode formed on the photoconductor.
    Type: Grant
    Filed: December 24, 2009
    Date of Patent: December 4, 2012
    Assignee: Samsung Display Co., Ltd.
    Inventor: Kwan-Wook Jung
  • Patent number: 8314468
    Abstract: A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: November 20, 2012
    Assignee: Moxtek, Inc.
    Inventors: Derek Hullinger, Hideharu Matsuura, Kazuo Taniguchi, Tadashi Utaka
  • Publication number: 20120235260
    Abstract: Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>104) are provided. A structure is provided that includes a p+ region on a first side of an intrinsic region and an n+ region on a second side of the intrinsic region. The thickness of the intrinsic region is minimized to achieve a desired gamma discrimination factor of at least 1.0E+04. Material is removed from one of the p+ region or the n+ region and into the intrinsic layer to produce pillars with open space between each pillar. The open space is filed with a neutron sensitive material. An electrode is placed in contact with the pillars and another electrode is placed in contact with the side that is opposite of the intrinsic layer with respect to the first electrode.
    Type: Application
    Filed: April 25, 2012
    Publication date: September 20, 2012
    Applicant: Lawrence Livermore National Security, LLC
    Inventors: Rebecca J. Nikolic, Adam M. Conway, Daniel Heineck, Lars F. Voss, Tzu Fang Wang, Qinghui Shao
  • Patent number: 8257996
    Abstract: The present invention relates to a method of fabricating a radiation detector comprising a photosensitive sensor assembly (1, 4), a scintillator (6) that converts the radiation into radiation to which the photosensitive sensor assembly (1, 4) is sensitive, the scintillator (6) being fastened by adhesive bonding to the sensor assembly, the sensor assembly comprising a substrate (4) and several attached sensors (1), the sensors (1) each having two faces (11, 12), a first face (11) of which is bonded to the substrate (4) and a second face (12) of which is bonded to the scintillator (6). The method consists in linking the following operations: the sensors (1) are deposited via their second face (12) on an adhesive film (13); and the sensors (1) are bonded via their first face (11) to the substrate (4).
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: September 4, 2012
    Assignee: Trixell S.A.S.
    Inventors: Gérard Vieux, Jean-Michel Vignolle, Pierre Rohr, David Couder, Dubois Sébastien
  • Publication number: 20120201350
    Abstract: Disclosed herein is a radiation detector including a photosensor and a capacitor. The radiation detector includes a plurality of photosensors having front and rear electrodes formed on front and rear surfaces thereof, an insulation layer formed on the rear surfaces of the photosensors, a plurality of data electrodes formed on the rear surface of the insulation layer, a plurality of signal electrodes formed on the front surfaces of the photosensors, and a capacitor formed including the rear electrode formed on the rear surface of the photosensor, the insulation layer formed on the rear surfaces of the rear electrodes, and the data electrodes formed on the rear surface of the insulation layer.
    Type: Application
    Filed: January 30, 2012
    Publication date: August 9, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Eung Bum KIM
  • Publication number: 20120168759
    Abstract: An X-ray detection device includes a gate electrode and a lower electrode on a substrate and laterally spaced from each other, a dielectric layer covering the gate electrode and the lower electrode, and a conductive pattern on the dielectric layer at a side of the gate electrode adjacent to the lower electrode and overlapping the lower electrode. The device also includes a source electrode spaced apart from the conductive pattern that is on the dielectric layer at the other side of the gate electrode, and an interlayer insulation layer covering the conductive pattern and the source electrode. A collector electrode, a photoelectric conversion layer, and a bias electrode are sequentially stacked on the interlayer insulation layer.
    Type: Application
    Filed: November 16, 2011
    Publication date: July 5, 2012
    Inventor: Kyung Soo Lee
  • Patent number: 8212141
    Abstract: There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wire 2 is embedded in an organic semiconductor 1. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wire 2 by means of applying a high voltage to the signal amplification wire 2, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: July 3, 2012
    Assignees: Niigata University, Japan Carlit Co., Ltd.
    Inventors: Hitoshi Miyata, Yoshimasa Fujigaki, Yoji Yamaguchi, Yoshinori Muto, Masaaki Tamura
  • Publication number: 20120146016
    Abstract: A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.
    Type: Application
    Filed: May 17, 2011
    Publication date: June 14, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-chul Park, Chang-jung Kim, Sang-wook Kim, Sun-il Kim
  • Patent number: 8134151
    Abstract: A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer.
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: March 13, 2012
    Assignee: FUJIFILM Corporation
    Inventor: Shinji Imai
  • Publication number: 20120049076
    Abstract: A method embodiment for forming an imaging array includes providing a glass substrate having a top surface, forming a patterned conductive layer on the top surface of the glass substrate, and forming an insulating layer on the patterned conductive layer on a side of the patterned conductive layer opposite the glass substrate. The method can include providing a single crystal silicon substrate having an internal separation layer proximate a first surface of the single crystal silicon substrate. The single crystal silicon substrate is secured to the glass substrate such that the first surface of the single crystal silicon substrate corresponds to the insulating layer. The single crystal silicon substrate is separated at the internal separation layer to create an exposed surface opposite the first surface of the single crystal silicon substrate and an array including one or more photosensitive elements and/or readout elements is formed thereon.
    Type: Application
    Filed: August 24, 2010
    Publication date: March 1, 2012
    Inventor: Timothy J. Tredwell
  • Publication number: 20120051509
    Abstract: To produce a grid for radiography, grooves with a high aspect ratio are formed in an X-ray transparent substrate, and a colloidal gold solution is dripped into the grooves in such an amount that the colloidal gold solution does not overflow the grooves. The applied colloidal gold solution flows into the grooves by capillarity. The X-ray transparent substrate is heated from beneath by a laser beam at a portion charged with the colloidal gold solution. Thus, the colloidal gold solution is dried with leaving colloidal gold particles behind. The charging and drying of the colloidal gold solution are repeated, until the grooves are filled with the colloidal gold particles. The grooves and the colloidal gold particles compose X-ray absorbing portions of the grid.
    Type: Application
    Filed: August 10, 2011
    Publication date: March 1, 2012
    Applicant: FUJIFILM Corporation
    Inventor: Yasuhisa Kaneko
  • Publication number: 20120051508
    Abstract: A gold colloidal solution is applied by dripping to a radio-transparent substrate having grooves with a high aspect ratio. The applied gold colloidal solution flows into the groove by capillarity, and is retained in the bottom of the groove. The radio-transparent substrate is heated from beneath by a laser beam at a part of the groove to which the gold colloidal solution has been applied, so the gold colloidal solution is vaporized and dried. Thus, gold colloidal particles remaining in the groove form a seed layer for electrolytic plating.
    Type: Application
    Filed: August 3, 2011
    Publication date: March 1, 2012
    Applicant: FUJIFILM Corporation
    Inventor: Yasuhisa Kaneko
  • Patent number: 8093095
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: January 10, 2012
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Patent number: 8093671
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: January 10, 2012
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Benjamin John Cantwell, Andy Brinkman
  • Patent number: 8084838
    Abstract: The invention provides a design of PIN diode having a low capacitance and a large area of effective collection of photo-generated charge. The low capacitance is obtained by replacing a continuous collector layer in the diode by a sparse array of collector disks interconnected by narrow metallic runners at a different structural level separated from the collector discs by an interlevel dielectric.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: December 27, 2011
    Assignee: Research Foundation of State University of New York
    Inventor: Serge Luryi
  • Publication number: 20110308593
    Abstract: A layer including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride area. The modified area also includes a hexagonal close packed crystal structure. A method for modifying a cadmium telluride layer and a thin film device are also disclosed.
    Type: Application
    Filed: June 18, 2010
    Publication date: December 22, 2011
    Applicant: PRIMESTAR SOLAR
    Inventor: Jonathan M. FREY
  • Patent number: 8044476
    Abstract: A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: October 25, 2011
    Assignee: National University Corporation Shizuoka University
    Inventors: Yoshinori Hatanaka, Toru Aoki
  • Publication number: 20110220805
    Abstract: A semiconductor device includes a semiconductor substrate; a buried insulator layer disposed on the semiconductor substrate, the buried insulator layer configured to retain an amount of charge in a plurality of charge traps in response to a radiation exposure by the semiconductor device; a semiconductor layer disposed on the buried insulating layer; a second insulator layer disposed on the semiconductor layer; a gate conducting layer disposed on the second insulator layer; and one or more side contacts electrically connected to the semiconductor layer. A method for radiation monitoring, the method includes applying a backgate voltage to a radiation monitor, the radiation monitor comprising a field effect transistor (FET); exposing the radiation monitor to radiation; determining a change in a threshold voltage of the radiation monitor; and determining an amount of radiation exposure based on the change in threshold voltage.
    Type: Application
    Filed: March 9, 2010
    Publication date: September 15, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael Gordon, Steven Koester, Kenneth Rodbell, Jeng-Bang Yau
  • Patent number: 8008114
    Abstract: A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: August 30, 2011
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsiang-Lan Lung, Shih-Hung Chen
  • Publication number: 20110193186
    Abstract: A radiation detector module includes a radiation detecting substrate including a plurality of semiconductor devices mounted thereon for detecting radiation, a shielding material at a position nearer to an incident side of the radiation than the radiation detecting substrate, the shielding material being capable of shielding a portion of the radiation, and a fixing member including a bottom, a first side wall extending in a normal direction to the bottom from one end of the bottom, and a second side wall extending in the normal direction to the bottom from an other end of the bottom. The first side wall and the second side wall each include a substrate supporting portion for supporting the radiation detecting substrate, and a shielding material supporting portion at a predetermined position relative to the substrate supporting portion for supporting the shielding material.
    Type: Application
    Filed: July 23, 2010
    Publication date: August 11, 2011
    Applicant: HITACHI CABLE, LTD.
    Inventors: Juhyun YU, Naoyuki YAMADA, Shinichi INOUE, Yoshinori SUNAGA, Isao TAKAHASHI
  • Patent number: 7968959
    Abstract: Gray-tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector. The thick semiconductor drift detector is based on a trench array, where the trenches in the trench array penetrate the bulk with different depths. These trenches form an electrode. By applying different electric potentials to the trenches in the trench array, the silicon between neighboring trenches fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: June 28, 2011
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Marc Christophersen, Bernard F. Phlips
  • Publication number: 20110139994
    Abstract: An x-ray detection photo diode is disclosed. The disclosed x-ray detection photo diode includes: a substrate; a first electrode formed on the substrate; a photoconductor layer formed on the first electrode in a narrower area than that of the first electrode; and a second electrode formed on the photoconductor layer. In this manner, the x-ray detection photo diode enables the electrode structure to be changed. As such, a leakage current generated in edges of the x-ray detection photo diode can be minimized.
    Type: Application
    Filed: July 28, 2010
    Publication date: June 16, 2011
    Inventors: Jong Moon LEE, Young Sik Kim, Ju Han Kim, Jae Hyung Jo
  • Publication number: 20110095386
    Abstract: A semiconductor sensor for detecting a radiation including a sensitive layer obtained in an inactive layer adapted to detect a light radiation, a portion thereof having a metal layer attached thereto, while on the remaining portion of the sensitive layer there is an overlapping scintillator. A bonding wire branches from said metal layer. Said sensor is shaped so that, according to a section of the sensor, said metal layer is at a lower height with respect to the scintillator crystal, so that the bonding wire does not interfere therewith. Such a result is obtained by tapering the thickness of said inactive layer and/or interposing a transparent layer between said sensitive layer and said scintillator crystal.
    Type: Application
    Filed: October 26, 2010
    Publication date: April 28, 2011
    Inventor: Claudio Piemonte
  • Publication number: 20110057278
    Abstract: An X-ray detector includes a first substrate having a bottom surface on which a first electrode is formed. A second substrate has a top surface on which a second electrode and a polyimide layer are sequentially formed. A photoconductive layer is formed on a bottom surface of the first electrode and generates electron-hole pairs. A reflective layer is formed on a bottom surface of the photoconductive layer. A liquid crystal polymer layer is formed on a bottom surface of the reflective layer, and peaks and valleys are alternately formed on a bottom surface of the liquid crystal polymer layer. A liquid crystal layer is formed between the liquid crystal polymer layer and the polyimide layer, and liquid crystal molecules are aligned in a direction in which the peaks and valleys on the bottom surface are arranged.
    Type: Application
    Filed: October 30, 2009
    Publication date: March 10, 2011
    Inventors: Sang Hwa KIM, Bae Kyun Kim, Kwang Seok Choi, Sang Su Hong, Chang Yun Lee, Kiy Eo Kim
  • Publication number: 20110031406
    Abstract: An X-ray detector for a tomography device is disclosed, including a plurality of detector elements, each including a photodiode and a scintillator fixed to the optically active surface of the photodiode by a connecting medium. In at least one embodiment, the optically active surface of the photodiode has a nanostructure, which forms a transition region having gradually progressing refractive indices between a refractive index of the connecting medium and a refractive index of the photodiode. Reflections at the optical transition of connecting medium/photodiode and also optical crosstalk to adjacent detector elements are greatly reduced in this way. Such an X-ray detector therefore has a higher luminous efficiency, with which a signal-to-noise ratio and a spatial resolution of the X-ray detector are improved. At least one embodiment of the invention additionally relates to a method for producing an X-ray detector having the properties mentioned.
    Type: Application
    Filed: August 3, 2010
    Publication date: February 10, 2011
    Inventor: Stefan Wirth
  • Patent number: 7884438
    Abstract: A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
    Type: Grant
    Filed: July 29, 2005
    Date of Patent: February 8, 2011
    Assignee: Varian Medical Systems, Inc.
    Inventors: Larry Dean Partain, George Zentai
  • Publication number: 20110024739
    Abstract: A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.
    Type: Application
    Filed: February 2, 2010
    Publication date: February 3, 2011
    Inventors: Fang-An SHU, Lee-Tyng Chen, Henry Wang, Wei-Chou Lan
  • Publication number: 20110012216
    Abstract: A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance.
    Type: Application
    Filed: July 16, 2010
    Publication date: January 20, 2011
    Inventors: Massimo Morichi, Olivier Evrard, Marijke Keters, Frazier Bronson, Mathieu Morelle, Paul Burger
  • Publication number: 20100327172
    Abstract: A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.
    Type: Application
    Filed: February 12, 2008
    Publication date: December 30, 2010
    Inventors: Satoshi Tokuda, Hiroyuki Kishihara, Masatomo Kaino, Tamotsu Okamoto
  • Publication number: 20100327170
    Abstract: A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoichiometry LiM2+GV and exhibits an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M2+=1, and GV=1. Electron-hole pairs are created by absorption of radiation, and the electron-hole pairs are detected by the current they generate between the anode and the cathode. The anode may include an array of pixels to provide improved spatial and energy resolution over the face of the anode. The signal value for each pixel can be mapped to a color or grey scale normalized to all the other pixel signal values for a particular moment in time. A guard ring or guard grid may be provided to reduce leakage current.
    Type: Application
    Filed: June 25, 2009
    Publication date: December 30, 2010
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Adrian Ivan, Daniel Bruno McDevitt, Brent Allen Clothier
  • Patent number: 7795044
    Abstract: An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable conducting channel with two oppositely formed depletion regions. The depletion width of each depletion region is controlled by a voltage applied to a respective control gate at each end of the multiplexing device. The present multi-bit addressing technique allows, for example, 10 to 100 bits of data to be accessed or addressed at a single node. The present invention can also be used to build a programmable nanoscale logic array or for randomly accessing a nanoscale sensor array.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: September 14, 2010
    Assignee: International Business Machines Corporation
    Inventors: Hemantha Kumar Wickramasinghe, Kailash Gopalakrishnan
  • Publication number: 20100163882
    Abstract: A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including a gate electrode, a source electrode, and a drain electrode, a first electrode connected to the drain electrode, a passivation layer formed over the gate line, the data line, the thin film transistor and the first electrode, a photoconductor formed over the passivation layer and connected to the first electrode, and a second electrode formed on the photoconductor.
    Type: Application
    Filed: December 24, 2009
    Publication date: July 1, 2010
    Inventor: Kwan-Wook Jung
  • Publication number: 20100144082
    Abstract: A radiation detecting apparatus includes: a sensor panel that has a substrate, and has a plurality of pixels each of which has a photoelectric conversion element for converting light into an electric signal, arranged on the substrate; and a scintillator layer arranged on a reverse side of the pixels with respect to the substrate, wherein the scintillator layer contains an activator added in a main ingredient, and has a higher concentration of the activator in a peripheral area than in a center area, in a surface direction of the scintillator layer.
    Type: Application
    Filed: February 17, 2010
    Publication date: June 10, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Masato Inoue
  • Publication number: 20100133584
    Abstract: A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material.
    Type: Application
    Filed: June 30, 2008
    Publication date: June 3, 2010
    Applicant: Durham Scientific Crystals Ltd.
    Inventors: Arnab Basu, Max Robinson
  • Publication number: 20100096674
    Abstract: Gray-tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector. The thick semiconductor drift detector is based on a trench array, where the trenches in the trench array penetrate the bulk with different depths. These trenches form an electrode. By applying different electric potentials to the trenches in the trench array, the silicon between neighboring trenches fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode.
    Type: Application
    Filed: October 19, 2009
    Publication date: April 22, 2010
    Inventors: Marc Christophersen, Bernard F. Phlips
  • Patent number: 7655940
    Abstract: A phase change memory device and a method of manufacturing the phase change memory device are provided. The phase change memory device may include a switching element and a storage node connected to the switching element, wherein the storage node includes a bottom electrode and a top electrode, a phase change layer interposed between the bottom electrode and the top electrode, and a titanium-tellurium (Ti—Te)-based diffusion barrier layer interposed between the top electrode and the phase change layer. The Ti—Te based diffusion barrier layer may be a TixTe1?x layer wherein x may be greater than 0 and less than 0.5.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: February 2, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-bong Park, Woong-chul Shin, Jang-ho Lee
  • Publication number: 20100001195
    Abstract: An apparatus is provided that includes an electronic assembly having a panel and a circuit board, a casing surrounding the electronic assembly and at least one isolated member coupled to the casing. The apparatus further includes a shock absorbing material flexibly coupling the electronic assembly directly or indirectly to the at least one isolated member.
    Type: Application
    Filed: July 2, 2008
    Publication date: January 7, 2010
    Inventors: Nicholas Ryan Konkle, Gary McBroom
  • Patent number: 7579621
    Abstract: A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: August 25, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Harry L. Tuller
  • Publication number: 20090146069
    Abstract: A pixel structure for a flat panel detector is constructed in which the diode silicon and the FET silicon are simultaneously etched to form isolated structures (array photodiodes, I/O elements, and so on) in which the edges or perimeters of the diode silicon features are self-aligned to the underlying FET SI features. The full, as-deposited, thickness of the FET gate dielectric and (at least) part of the FET silicon layer remains underneath the diode silicon across the entirety of the flat panel detector.
    Type: Application
    Filed: December 6, 2007
    Publication date: June 11, 2009
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Douglas Albagli, Aaron Judy Couture, William Andrew Hennessy
  • Patent number: 7541617
    Abstract: In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: June 2, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Chiori Mochizuki, Masakazu Morishita, Minoru Watanabe, Takamasa Ishii, Keiichi Nomura
  • Publication number: 20090096046
    Abstract: The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1).
    Type: Application
    Filed: March 13, 2007
    Publication date: April 16, 2009
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Anco Heringa, Erik Jan Lous, Wibo Daniel Van Noort, Wilheimus Cornelis Maria Peters, Joost Willem Christiaan Veltkamp
  • Patent number: 7504702
    Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: March 17, 2009
    Assignee: President & Fellows of Harvard College
    Inventors: Eric Mazur, James Edward Carey, III
  • Publication number: 20090050814
    Abstract: A radiation sensor and a method for making the radiation sensor are described. An ionizing radiation sensitive area is formed in a radiation insensitive or hardened die. When the sensitive area is impacted by ionizing radiation, properties of the sensitive area change. For example, the changed property may be charge density, threshold voltage, leakage current, and/or resistance. Circuitry for measuring these property changes is located in a radiation hardened area of the die. As a result, a radiation sensor may be fabricated on a single die.
    Type: Application
    Filed: August 20, 2007
    Publication date: February 26, 2009
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: James D. Seefeldt, Jeffrey J. Kriz
  • Publication number: 20080302969
    Abstract: In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.
    Type: Application
    Filed: June 10, 2008
    Publication date: December 11, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwan-Wook JUNG, Dae-Ho CHOO
  • Publication number: 20080258067
    Abstract: The invention relates to a microelectronic system, particularly for an X-ray detector, comprising a semiconductor layer (1) with an array of pixels (P) which are composed of photosensitive components (3) and associated electronic circuits (4). An insulating passivation layer (5) with recesses (5a) in its surface is disposed between the semiconductor layer (1) and a scintillator (8). A shielding metal (6) for the protection of the electronic circuits (4) from X-radiation may be disposed in the recesses (5a) of the passivation layer (5). Furthermore, the recesses may contain glue for the fixation of the scintillator (8), wherein the passivation layer (5) additionally serves as a spacer between scintillator (8) and semiconductor layer (1).
    Type: Application
    Filed: August 11, 2005
    Publication date: October 23, 2008
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Gereon Vogtmeier, Roger Steadman Booker, Guenter Zeitler, Klaus Jurgen Engel, Herfried Karl Wieczorek
  • Patent number: 7411232
    Abstract: A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an epitaxial layer formed on the semiconductor substrate by epitaxial growth. The epitaxial layer has a multilayer structure including: a first pn junction layer; a first insulating layer; a second pn junction layer; a second insulating layer; and a third pn junction layer. The first insulating layer and the second insulating layer have openings, and the first pn junction layer and the second pn junction layer are adjacent to each other through the openings of the first insulating layer which is placed in between these pn junction layers, and the second pn junction layer and the third pn junction layer are adjacent to each other through the openings of the second insulating layer which is placed in between these pn junction layers.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: August 12, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tetsuzo Ueda, Seiichiro Tamai
  • Publication number: 20030234430
    Abstract: Methods and apparatus are provided for reducing the overall radiation hardness of a semiconductor chip. A radiation detector and a failure memory are provided. A disable signal or signals is produced by the failure memory. The disable signal is a required input to a user logic function, such as an off chip driver, an off chip receiver, a clock, or a static random access memory. When the radiation detector detects radiation, that detection is stored in the failure memory. The disable signal, when active, causes some or all of the user function to be inoperative. This invention is particularly important when the semiconductor chip is produced in a silicon on insulator (SOI) Complementary Metal Oxide Semiconductor (CMOS) process, which is naturally radiation resistant.
    Type: Application
    Filed: June 20, 2002
    Publication date: December 25, 2003
    Applicant: International Business Machines Corporation
    Inventors: David Michael Friend, Nghia Van Phan, Michael James Rohn