Abstract: A bedding assembly for a rifle that includes a bedding block. The rifle has a barrel, which is attached to a receiver assembly, and the barrel has a longitudinal axis. The receiver assembly is attached to a stock by means of the bedding block. The bedding block is pivotally attached to the barrel, thereby forming an axis of pivotal attachment of the bedding block to the barrel. The axis of pivotal attachment of the bedding block to the barrel is horizontally perpendicular to and intersects the longitudinal axis of the barrel.

Abstract: The instant disclosure discloses a semiconductor device comprising a substrate having a cell region; a device layer over the substrate; a plurality of capacitor lower electrodes over the device layer in the cell region, each of the capacitor lower electrodes has a U-shaped profile defining an inner surface in a cross section; a capacitor dielectric liner on the inner surfaces of the capacitor lower electrodes; and a SiGe layer over the capacitor dielectric liner, wherein the SiGe layer has a Ge concentration distribution that has a greatest value at a middle portion of the SiGe layer and decreases there-from upwardly and downwardly along a thickness direction.

Abstract: A display screen includes a first glass substrate including a color filter region and a light shielding region. The light shielding region includes a transparent region at a first position of the light shielding region. The display screen further includes a second glass substrate including a display control circuit. The display control circuit controls display statuses of the color filter region. The display screen also includes a light intensity sensor at a second position of the second glass substrate. The first position and the second position satisfy a preset relative positional correspondence to allow light transmitted through the first position to reach the light intensity sensor.

Abstract: Devices that include a near field transducer (NFT); an amorphous gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

Abstract: Devices that include a near field transducer (NFT); an amorphous gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

Abstract: A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.

Abstract: A microbolometer is disclosed, including a bottom dielectric of a bridge structure; a detector layer disposed above the bottom dielectric, the detector layer comprised of a metal-doped vanadium pentaoxide material; and a top dielectric disposed above the detector layer.

Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Abstract: A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.

Abstract: Certain example embodiments of this invention relate to solar cell devices, and/or methods of making the same. More particularly, certain example embodiments relate to a front transparent conductive electrode for solar cell devices (e.g., micro-morph silicon thin-film solar cells), and/or methods of making the same. The electrode of certain example embodiments may include a textured transparent conductive oxide (TCO) layer. The textured layer and/or coating may include at least two feature sizes, wherein at least one type of feature is comparable in size to the wavelength of solar light absorbed by the amorphous portion of the micro-morph silicon solar cell, and the other feature size being comparable to that of micro-crystalline portion. Double-agent etchants may be used to produce such different features sizes. Using a textured TCO-based layer having different feature sizes may improve the efficiency of the solar cell.

Abstract: A solid state light source includes a substrate having a top surface and a bottom surface, and at least one optically active layer on the top surface of the substrate. At least one of the top surface, the bottom surface, the optically active layer or an emission surface on the optically active layer includes a patterned surface that includes a plurality of tilted surface features that have a high elevation portion and a low elevation portion that define a height (h), and wherein the plurality of tilted surface features define a minimum lateral dimension (r). The plurality of tilted surface features provide at least one surface portion that has a surface tilt angle from 3 to 85 degrees. The patterned surface has a surface roughness <10 nm rms, and h/r is ?0.05.

Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Abstract: A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.