Abstract: Embodiments describe a display integration scheme in which an array of pixel driver chips embedded front side up in an insulator layer. A front side redistribution layer (RDL) spans across and is in electrical connection with the front sides of the array of pixel driver chips, and an array of light emitting diodes (LEDs) is bonded to the front side RDL. The pixel driver chips may be located directly beneath the display area of the display panel.

Abstract: An optical circuit is used with continuous wave signals having different wavelengths at a channel spacing from one another. A portion of the optical circuit is implemented in a photonic integrated circuit. Modulators in a modulation stage modulate the continuous wave signals to produce modulated signals. A multiplexing stage, which can have multiplexing filters, power combiners, or power couplers, multiplexes the continuous wave or modulated signals to produce multiplexed signals. The multiplexing stage may be placed either before or after the modulation stage. One or more polarization rotator and combiner (PRC) devices in a final stage combines the multiplexed signals into an output signal. The output signal has a first set of the different wavelengths at a first polarization and has a second separate set of the different wavelengths at a second polarization orthogonal to the first polarization.

Abstract: A lighting module of a motor vehicle signaling device includes a ceramic substrate having opposite first and second faces, and a plurality of selectively activatable light sources mounted on the first face of the ceramic substrate. Each of the first and second faces of the ceramic substrate are provided with at least a first and a second respective interconnection layer. The ceramic substrate comprises a plurality of through holes designed to interconnect the first interconnection layer to the second interconnection layer.

Abstract: An eye-imaging apparatus including red, green, and blue light sources, one or more optical lenses, a light guide cable to transmit light from the light source, a one-chip color image sensor including a shutter, the color image sensor being operable to measure red, green, and blue light in the imaging path and transmit measured colored light in respective red, green, and blue channels. The red, green, and blue light sources are sequentially flashed in synchronization with the operation of the image sensor and the color image sensor captures red, green, and blue images in synchronization with the flashed color. The color image sensor transmits the colored images on respective color channels one at a time.

Abstract: In an embodiment, a leadframe includes a first electrically conductive part and a second electrically conductive part, each having an outer surface arranged to provide substantially coplanar outer contact areas having a footprint and an inner surface opposing the outer surface, the first part being spaced apart from the second part by a gap, a first recess arranged in the inner surface of the first part, a second recess arranged in the inner surface of the second part, and a first electrically conductive insert that is arranged in, and extends between, the first recess and the second recess and bridges the gap between the first part and the second part.

Abstract: A display device includes a substrate, a data conductive layer on the substrate and including a first voltage line, a via layer on the data conductive layer, a light emitting element on the via layer, a first contact electrode on the light emitting element and contacting a first end of the light emitting element, and a second contact electrode on the light emitting element and contacting a second end of the light emitting element, wherein the second contact electrode is electrically connected to the first voltage line through a first contact hole penetrating the via layer.

Abstract: In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

Abstract: The present disclosure provides an electronic device including a substrate, a plurality of bumps, a plurality of diodes, and a shielding layer. The substrate has a plurality of first through holes. The bumps are disposed on the substrate. The diodes are disposed on the substrate. The shielding layer is disposed on the substrate. One of the bumps is located between two adjacent ones of the diodes in a cross-sectional view, and the shielding layer overlaps at least a portion of the bumps and at least a portion of the first through holes.

Abstract: An electronic device includes a heat dissipation structure that includes one or more openings. An electronic component is disposed on a surface of the heat dissipation structure and over the one or more openings. The electronic component is coupled to the heat dissipation structure by an adhesion material in the one or more openings.

Abstract: An emitter and a method for emitting light are described. The emitter has a substrate with a substrate surface and at least one LED element arranged on the substrate surface for generating the light to be emitted. An active cooling unit for cooling the at least one LED element has at least one cooling channel. The at least one cooling channel is arranged on the substrate surface in a beam path of at least one portion of the light to be emitted, which can be generated by means of the at least one LED element, for redirecting the light to be emitted.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly polarization structures for LED devices are disclosed. Polarization structures are disclosed that are integrated within light-emitting devices and are capable of receiving unpolarized light and providing polarized light that exits the light-emitting devices. Polarization structures may be formed on or in various surfaces within light-emitting devices, such as one or more surfaces of cover structures and/or LED chips. LED packages with multiple LED chips and multiple polarization structures are also disclosed. The LED chips may be arranged to be electrically activated and deactivated independently of one another such that corresponding LED packages are capable of electronically switching between different orientations of polarized and/or unpolarized light.

Abstract: A light emitting device includes a light emitting element, a light guide member, a reflecting member, a wavelength conversion member. The light emitting element has a light emitting surface and lateral surfaces. The light guiding member is provided on at least a portion of the lateral surfaces of the light emitting element. The reflecting member is provided on the lateral surface of the light emitting element with the light guiding member interposed therebetween. The wavelength conversion member is provided on the light emitting surface of the light emitting element, the light guiding member and the reflecting member. The wavelength conversion member is provided with a recess between an outer lateral surface of the wavelength conversion member and the light guiding member. The reflecting member is provided in the recess.

Abstract: An LED device and a bracket thereof. The bracket includes a first photo-etched metal part, composed of a first electrode and a chip placement layer stacked thereon, wherein an area of the chip placement layer is greater than an area of the first electrode; a second photo-etched metal part, composed of a second electrode and a connection layer stacked thereon; wherein a first insulation trench is provided between the first electrode and the second electrode, and a second insulation trench is provided between the chip placement layer and the connection layer. The LED device and the bracket thereof can increase the placement area for placing LED chips, thereby improving the luminance of the LED device.

Abstract: Solid state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. In some embodiments, an LED package includes electrical connections that are configured to reduce corrosion of metals within the LED package; or decrease the overall forward voltage of the LED package; or provide an electrical path for serially-connected electrostatic discharge (ESD) chips. In some embodiments, an LED package includes at least two LED chips and a material between the two LED chips that promotes homogeneity of composite emissions from the two LED chips. In this manner, LED packages according to the present disclosure may be beneficial for various applications, including those where a high luminous intensity is desired in a variety of environmental conditions. Such applications include automotive lighting, aerospace lighting, and general illumination.

Abstract: A display device includes: a display element layer including an emission area and a non-emission area around the emission area; a first conductive layer on the non-emission area; a first insulating layer on the non-emission area to cover the first conductive layer, the first insulating layer having an opening part overlapping the emission area in a plan view; a second conductive layer on the first insulating layer; and a reflection pattern spaced apart from the second conductive layer and on the first insulating layer.

Abstract: A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

Abstract: The present disclosure provides a high refractive index acrylic formulation embedded with sub-10 nm metal oxide nanocrystals. The formulation is ideal for high refractive index, high transparency coating for a variety of optical applications including OLED lighting.

Abstract: A display device includes a display area including a first light-emitting area and a second light-emitting area; a peripheral area adjacent to the display area; pixels which emit incident light; an encapsulation layer covering the pixels; a first color-converting pattern corresponding to the first light-emitting area and having a refractivity; a transmission pattern corresponding to the second light-emitting area and through which the incident light is transmitted; a low refractivity layer is in the display area and facing the encapsulation layer with each of the first color-converting pattern and the transmission pattern therebetween, the low refractivity layer including: a resin and a hollow particle which define a refractivity lower than the refractivity of the first color-converting pattern; and a first dam structure in the peripheral area and spaced apart from the display area, the first dam structure and the transmission pattern being portions of a same material layer.

Abstract: The present invention pertains to a luminous device of an automotive vehicle. The luminous device is configured to produce homogenous lit appearances when using multiple light sources. The luminous device comprises at least one light source for producing a light beam associated with a photometric function. Further, the at least one light source is encapsulated within an encapsulating material. The luminous device further comprises at least one optical element configured to produce said photometric function, wherein the at least one optical element is arranged juxtapose with said encapsulated light source and is configured to receive said light beam to perform at least one said photometric function of the luminance device.

Abstract: Embodiments provide a high aspect ratio via for coupling a top electrode of a vertically oriented component to the substrate, where the top electrode of the component is coupled to the via by a conductive bridge, and where the bottom electrode of the component is coupled to substrate. Some embodiments provide for mounting the component by a component wafer and separating the components while mounted to the substrate. Some embodiments provide for mounting individual components to the substrate.

Abstract: A multi-chip module (MCM) package includes a leadframe including half-etched lead terminals including a full-thickness and half-etched portion, and second lead terminals including a thermal pad(s). A first die is attached by a dielectric die attach material to the half-etched lead terminals. The first die includes first bond pads coupled to first circuitry configured for receiving a control signal and for outputting a coded signal and a transmitter. The second die includes second bond pads coupled to second circuitry configured for a receiver with a gate driver. The second die is attached by a conductive die attach material to the thermal pad. Bond wires include die-to-die bond wires between a portion of the first and second bond pads. A high-voltage isolation device is between the transmitter and receiver. A mold compound encapsulates the first and the second die.

Abstract: A light emission device includes a substrate, a light emission element, and a wavelength converter. The substrate has a first surface. The light emission element is mounted on the first surface and emits excitation light. The wavelength converter is positioned on at least a portion of the first surface and the light emission element. The wavelength converter converts the excitation light into illumination light. The substrate includes at least one of a recess or a projection. The recess has a second surface and a third surface. The second surface is positioned below the first surface. The third surface connects the second surface and the first surface to each other. The projection projects upward from the first surface. The wavelength converter is in contact with at least one of at least a portion of the second surface or at least a portion of the projection.

Abstract: An optical unit includes a ball lens and a light source. The ball lens condenses light and outputs the condensed light. The light source has a light emitting surface and the light source outputs light toward the ball lens. The light emitting surface is located closer to the ball lens than a focal position of the ball lens.

Abstract: A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

Abstract: A panel includes a first board, a second board, and an edge cap. The first board and the second board each including a core that is sandwiched between and bonded to a first skin and a second skin. The edge cap is positioned between and bonded to the first board and the second board such that a cavity is defined by the first board, the second board, and the edge cap. The cavity is configured to receive an insert and is isolated from forces transferred between the first board and the second board.

Abstract: A method of manufacturing a pixelated structure may be provided. The method may comprise providing a donor substrate comprising the plurality of pixelated microdevices, bonding a selective set of the pixelated microdevices from the donor substrate to a system substrate; and patterning a bottom conductive layer of the pixelated microdevices after separating the donor substrate from the system substrate. The patterning may be done by fully isolating the layers or leaving some thin layers between the patterns.

Abstract: A display substrate includes a base substrate, a plurality of light-emitting units, a protecting layer and a connecting line. The base substrate is a transparent substrate, and the plurality of light-emitting units, the protecting layer and the connecting line are laminated in sequence along a direction distal from the base substrate. A via is arranged in the protecting layer, one end of the connecting line is connected to the plurality of light-emitting units through the via, and the other end of the connecting line is configured to connect to a driving circuit of a display apparatus.

Abstract: A light emitting device includes a flexible substrate, a light emitting element, a conductive connecting material and a first holding member. The flexible substrate includes a flexible base and a wire. The first holding member is arranged on an opposite side surface to a surface of a side of the substrate on which the light emitting element is mounted. The first holding member surrounds a region corresponding to a region on the substrate including the light emitting element and the conductive connecting material in a plan view. The first holding member is arranged adjacent to the wire. The first holding member includes an inner region arranged on an inner side of the first holding member, and having higher rigidity than rigidity of the flexible base, and an outer region arranged adjacent to the inner region outside the inner region, and having lower rigidity than rigidity of the inner region.

Abstract: Chlorophyll a absorbs violet (high-energy; max. 372 nm) and orange light (low-energy; max. 642 nm) the most; the mid-point being 507 nm. Chlorophyll b absorbs mostly blue (high energy; max. 392 nm) and yellow (low-energy; max. 626 nm) light; the mid-point being 509 nm. They both also absorb light of other wavelengths with less intensity. Both mid-points are nearly identical to the mid-point between energy and entropy maximum of scattered sunlight. The claimed microelectronic device provides radiation for artificial lighting applications from ruthenium vapor in the blue and deep red region. The entropy (heat) generated by inefficiencies in p-n junction recombination and luminescent materials' Stokes shift is transferred to the thermodynamic heats of evaporation and sublimation of rubidium atoms. The microelectronic device eliminates the need for external cooling of indoor greenhouse environments used for growth of crops under continuous artificial lighting.

Abstract: Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.

Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.

Abstract: To provide a method of manufacturing a silicone cured product and a silicone cured product which allow generation of a volatile component to be reduced significantly even being exposed to high temperatures of room temperature or more for a long time. A method of manufacturing a silicone cured product includes: curing an additional polyorganosiloxane composition by hydrosilylation reaction under closed atmosphere at a temperature of 40° C. or more and 200° C. or less to obtain a primary cured product; and heating the primary cured product under open atmosphere or reduced pressure at a temperature of 60° C. or more and 160° C. or less, and a silicone cured product in which when heated at 150° C. for 16 hours, a total generation amount of an alcohol having 1 to 3 carbon atoms and an oxide thereof, and an alkyl group-containing silane compound having 1 to 3 carbon atoms is 10 ppm or less.

Abstract: A light emitting device may include a first electrode disposed on a substrate; a first insulating layer disposed on the substrate and overlapping at least a part of the first electrode; a second electrode disposed on the first insulating layer and spaced apart from the first electrode; and at least one light emitting diode electrically connected between the first electrode and the second electrode. The first electrode and the second electrode may be disposed on different layers on the substrate, the first insulating layer is disposed between the first electrode and the second electrode, and the first electrode and the second electrode are spaced apart from each other so as not to overlap each other in a plan view.

Abstract: The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

Abstract: A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m·K or more; a light-emitting element provided on a front surface side of the base member; a first rear surface wire that is provided on a rear surface side of the base member and is connected to one of a cathode electrode and an anode electrode of the light-emitting element; a second rear surface wire that is provided on the rear surface side of the base member and is connected to the other one of the cathode electrode and the anode electrode; and a reference potential wire that is provided on the rear surface side of the base member and is connected to an external reference potential.

Abstract: The invention features a hot melt composition in the form of a film including from 40% by weight to 80% by weight of a non-functionalized alkyl acrylate, from 14% by weight to 50% by weight of an olefin polymer, from 2% by weight to 15% by weight of a first functionalized polymer comprising a functional group selected from the group consisting of epoxides and carboxylic anhydrides, and from 2% by weight to 15% by weight of a second functionalized polymer comprising a functional group capable of reacting with the functional group of the first functionalized polymer. The hot melt composition in the form of a film has found utility as an encapsulant for thin film photovoltaic modules.

Abstract: Light assemblies comprise a housing having a chamber, one or more light emitting elements connected with the housing, a transparent cover, and one or more reflectors positioned adjacent the light emitting element. The one or more light emitting elements are interposed between the transparent cover and the one or more reflectors, and the one or more light emitting elements and one or more reflectors operate to provide a multi-directional field of illumination that is 180 degrees or more, e.g., between about 180 to 270 degrees. The transparent cover may have a convex outer surface to facilitate light transmission in side oriented directions. The light assembly may include switches or controls for on/off and/or dimming functions. An example light assembly comprises three light emitting elements in the form of LEDs, and includes three reflectors, wherein the LEDs and reflectors are configured to produce the desired field of illumination.

Abstract: The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

Abstract: The invention refers to a backlighting device for a (1) lighting assembly of a vehicle. The backlighting device comprises at least one printed circuit board and at least one light guide body. The light guide body receives the light, emitted by a light source. The printed circuit board blocks and deflects the light emitted by the light source to the light guide body. The printed circuit board has at least one opening to receive the light guide body.

Abstract: Provided is a light-emitting device that includes a solid-state light source emitting excitation light and a phosphor layer having a first refractive index, provided on a light-emitting surface side of the solid-state light source, and having a first reflection film on its side surface. The light-emitting device further includes a low refractive layer provided on the phosphor layer and having a second refractive index less than the first refractive index, and a sealing member encapsulating the phosphor layer and the low refractive layer and having a third refractive index greater than or equal to the second refractive index.

Abstract: A light source module is provided. The light source module includes a lead frame, a light source, a cup part, and a reflector. The light source is disposed on the lead frame, wherein the light source provides a light. The cup part is disposed on the lead frame, wherein the cup part includes an opening, a plurality of thick-wall portions and a plurality of thin-wall portions. The thick-wall portions and the thin-wall portions surround the light source and define a space. The reflector covers the opening. At least a portion of the light is reflected by the reflector, and is emitted through the thick-wall portions and the thin-wall portions.

Abstract: An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 ?m and 30 ?m, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

Abstract: The present application provides a method for improving colour difference of an LED display screen, comprising: drilling and polishing circuit surfaces of a plurality of LED substrates; performing screen printing on the circuit surfaces of the plurality of LED substrates, and performing oil skimming on a mesh screen during the screen printing every other preset printing cycle in such a way that an ink on the mesh screen has a viscosity within a predetermined viscosity range; performing an exposure setting process on the plurality of LED substrates that have been screen printed to obtain a plurality of LED printed circuit boards; and finally assembling the plurality of LED printed circuit boards to form an LED display screen.

Abstract: The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor die, a package substrate and bonding wires. The semiconductor die has I/O pads arranged at an active side. The package substrate is provided with a first side attached to the active side of the semiconductor die and a second side facing away from the semiconductor die, and has an opening penetrating through the package substrate. The I/O pads are overlapped with the opening. A width of the opening at the second side of the package substrate is greater than a width of the opening at the first side of the package substrate. The bonding wires connect the I/O pads to the second side of the package substrate through the opening of the package substrate.

Abstract: A display panel and a display device. The display panel includes a substrate, at least three different light-emitting units disposed on the substrate, and at least three different buffer encapsulation layers disposed on the side of the at least three different light-emitting units facing away from the substrate. The at least three different light-emitting units emit at least three different colors. The thickness of at least one buffer encapsulation layer corresponding to at least one light-emitting unit among the at least three different light-emitting units is different from the respective thicknesses of the other buffer encapsulation layers corresponding to the other light-emitting units among the at least three different light-emitting units.

Abstract: An optical device includes: a first mirror having a first reflecting surface extending in a first direction and a second direction perpendicular to the first direction; a second mirror having a second reflecting surface; an optical waveguide layer that is located between the first and second mirrors and propagates light in the first direction; and an optical element that is disposed on the first mirror and emits incident light in a direction different from an incident direction. The optical element emits (1) incident light entering from the optical waveguide layer through the first mirror in a direction whose first direction component is smaller than that of an incident direction of the incident light by refraction and/or diffraction or (2) incident light entering from the outside in a direction whose first direction component is larger than that of an incident direction by refraction and/or diffraction.

Abstract: A pixel includes a first electrode and a second electrode facing each other, an insulating layer on the first and second electrodes, a plurality of light-emitting elements located on the insulating layer between the first electrode and the second electrode, a first contact electrode electrically connected to the first electrode, and a second contact electrode electrically connected to the second electrode. Here, a first gap having a constant width in a first direction and a second gap having a width in the first direction that gradually changes along a second direction are located between the first electrode and the second electrode or between the first contact electrode and the second contact electrode.

Abstract: A light-emitting packaging device includes a substrate, a light-emitting diode (LED) chip, an optical element, and a covering member. The LED chip is disposed on the substrate. The optical element is spacedly disposed on the LED chip opposite to the substrate, and has an upper surface and a lower surface that are respectively distal from and proximal to the LED chip. The covering member is made from a fluorine-containing resin, and is configured to cover the LED chip and at least a portion of the upper surface of the optical element.

Abstract: A method of producing a light-emitting device includes: providing a package having an upper surface and a recess including an opening located at the upper surface; disposing a light-emitting element on a surface defining a bottom of the recess of the package; disposing an uncured sealing member in the recess of the package; and curing the uncured sealing member while applying a centrifugal force to the package in which the uncured sealing member are disposed, such that the centrifugal force is applied in a direction perpendicular to the upper surface and toward the surface defining the bottom of the recess.

Abstract: A reflective member having transflective and substantially opaque regions is disclosed. The transflective region may serve as a sensor opening region. When viewing the member from a first direction, the difference between a total light reflectance of the member at the substantially opaque region and at the sensor opening region is less than five percent. Additionally, when viewing the member from the first direction, the difference between a color reflectance of the member at the substantially opaque region and at the sensor opening region is less than 5 delta C* units. A sensor disposed in a second direction of the sensor opening region of the member is operable to receive light through the member at the sensor opening region. The second direction is opposite the first direction.