Abstract: A light-emitting device according to the present invention includes a resin substrate having a flat plate shape, a first wiring electrode made of metal, a second wiring electrode made of metal, a light-emitting element, and a resin body. The light-emitting element is mounted onto the electrode portions of the first wiring electrode and the second wiring electrode on the first principal surface side of the resin substrate. The resin body has a light reflection property, covers the first principal surface of the resin substrate, covers the respective wiring portions of the first wiring electrode and the second wiring electrode and forming a frame body surrounding the light-emitting element on the first principal surface, and covers a region exposed from the first wiring electrode and the second wiring electrode on the second principal surface of the resin substrate.

Abstract: An embodiment of present invention discloses a light-emitting device which includes a first light-emitting area, a second light-emitting area, and a third light-emitting area. The first light-emitting area emits a red light and includes a first light-emitting unit. The second light-emitting area emits a blue light and includes a second light-emitting unit. The third light-emitting area emits a green light and includes a third light-emitting unit. The first light-emitting area is larger than the second light-emitting area and larger than the third light-emitting area. Each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit has a width of less than 100 ?m and a length of less than 100 ?m.

Abstract: The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: one or more light emitting units, each including a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on a growth substrate; an electrode unit including a first semiconductor layer having a first conductivity and a metal layer formed on the first semiconductor layer; and one or more bonding layers for electrically connecting to the light emitting units and electrode unit, respectively, wherein each bonding layer has a first region on which the light emitting units and the electrode unit are arranged, and a second region having a larger planar area than that of the first region and being electrically connected to an external substrate.

Abstract: An illumination device includes a light-emitting device and a control device. The light-emitting device is configured to emit at least light of a first color temperature having a correlated color temperature in a range from 3500 K to 8000 K, the light having a melanopic ratio of a prescribed value within a variation range of the melanopic ratio in which a gap between a maximum value and a minimum value of the melanopic ratio at the first color temperature is 0.30 or more. The control device is configured to control the light emitted from the light-emitting device, within a predetermined amount of time, by varying the melanopic ratio of the light by 0.3 or more, and adjusting the correlated color temperature of the light in a range from 0 K to ±500 K with respect to the first color temperature.

Abstract: A method for manufacturing a semiconductor device include: providing a submount that has a first surface, a second surface located on a side opposite the first surface, and at least one lateral surface located between the first surface and the second surface, the submount including: a groove located at the second surface, a heat dissipation portion located at the second surface, at least one end face through channel located at the at least one lateral surface, and an electrode pattern on the first surface; physically joining the heat dissipation portion to a package substrate by a first joint material; and after the step of physically joining the heat dissipation portion to the package substrate, disposing a second joint material inside the at least one end face through channel to electrically connect the electrode pattern and the package substrate.

Abstract: A light source device includes a substrate and a light source. The light source includes a first light emission unit, a plurality of second light emission units, and a plurality of third light emission units arranged two-dimensionally on the substrate. The first light emission unit is arranged at a center among the light emission units, and includes a first light emission element having a first light emission face. The second light emission units surround the first light emission unit, and include a plurality of second light emission elements, respectively, each having a second light emission face. The third light emission units surround the second light emission units, and include a plurality of third light emission elements, respectively, each having a third light emission faces. The first light emission face and the second light emission faces all have the same areas. The third light emission faces have different areas.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: A semiconductor light-emitting device has an emitter matrix with an arrangement of emitter cells interspersed with non-emitter cells. The emitter cell has a semiconductor emitter, and a non-emitter cell does not have a semiconductor emitter. A number of bond pads for connection to a power supply and a plurality of wirebonds are present. Each wirebond extends from a bond pad to the semiconductor emitter of an emitter cell. An imaging arrangement includes a light source for illuminating a scene. The light source has a pair of such semiconductor light-emitting devices. A method of manufacturing such a semiconductor light-emitting device is also described.

Abstract: A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

Abstract: In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

Abstract: A COB type photoelectric device is provided. The COB type photoelectric device includes: a metallic substrate including a photoelectric element fixing area; a dam disposed on the metallic substrate and surrounding the photoelectric element fixing area; first photoelectric elements disposed on the metallic substrate and in the photoelectric element fixing area; a KSF phosphor based layer disposed on the first photoelectric elements and being not in contact with the metallic substrate; and an isolation layer disposed in the dam and covering the KSF phosphor based layer. The KSF phosphor based layer includes a KSF phosphor. The COB type photoelectric device can make full use of high luminous efficiency performance of the KSF, and improve luminous efficiency of the COB type photoelectric device while maintaining stability of the KSF.

Abstract: A light emitting device may include: a substrate; a light emitting element located on the substrate and configured to emit light; a first electrode and a second electrode spaced from each other with the light emitting element interposed therebetween; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode with a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode with a second end of the light emitting element. In a plan view, the color conversion layer may be spaced from the light emitting element and overlaps with at least one of the first and the second contact electrodes.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LED packages are disclosed. Arrangements for LED packages are disclosed that provide improved reliability and improved emission characteristics in a variety of applications, including outdoor LED displays as well as general illumination. LED packages are disclosed with linear arrangements of LED chips and corresponding lenses to provide improved visibility and color mixing at higher viewing angles. LED packages are disclosed that include different types of lenses that are arranged within the same LED package depending on desired emission characteristics. Body structures for LED packages are disclosed that include arrangements for improved adhesion with encapsulant materials and optional potting materials to provide improved moisture barriers.

Abstract: The invention relates to an optoelectronic component comprising a carrier, an optoelectronic semiconductor chip arranged on the upper side of the carrier, and a frame which is arranged on the upper side of the carrier and which frames the optoelectronic semiconductor chip. An underside of the frame, which faces the upper side of the carrier, has at least one recess. In a spatial area framed by the frame on the upper side of the carrier, there is arranged a potting material which is in contact with the frame and at least partly fills the recess in the frame.

Abstract: A light emitting device with on-chip optical power readout includes a light emitting mesa and a light detecting mesa formed adjacent to each other on the same substrate of a chip, and a portion of the light emitted from the light emitting mesa is transmitted to the light detecting mesa at least through the substrate. The light emitting mesa and the light detecting mesa have exactly the same epitaxial structure and can be electrically isolated from each other by an insulation layer, or an airgap formed therebetween, or by ion implantation. The light emitting mesa and the light detecting mesa can also share an n-type structure and a common n-electrode while having their own p-electrode, respectively.

Abstract: A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.

Abstract: A light emitting device including an insulation unit, a light emitting region including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first pillar electrically connected to the first conductivity type semiconductor layers of the first, second, and third LED stacks, and a second pillar, a third pillar, and a fourth pillar electrically connected to the second conductivity type semiconductor layers of the first, second, and third LED stacks, respectively, an intermediate first connector and a lower first connector respectively electrically connecting the first conductivity type semiconductor layers of the second LED stack and the third LED stack to the first pillar, in which the insulation unit have four corners, and the first, second, third, and fourth pillars are disposed near the four corners covering a side surface of the insulation unit, respectively.

Abstract: To provide a radio frequency module and a communication device capable of achieving reduction in height. The radio frequency module includes a mounting substrate and one or more chip inductors. The mounting substrate has a recess at least one end of both ends in a second direction orthogonal to a first direction that is a thickness direction of the mounting substrate. A second chip inductor that is at least one chip inductor of the one or more chip inductors is disposed in the recess.

Abstract: In various aspects, the present disclosure provides photodetector devices that may be provided in arrays. The photodetector includes a first electrode, a second electrode, and a photoactive layer assembly disposed therebetween. The photoactive layer assembly comprises a first charge transport layer, a second charge transport layer, and an amorphous silicon (a-Si) material substantially free of doping and being substantially free of doping disposed between the first charge transport layer and the second charge transport layer. The photodetector device transmits light in a predetermined range of wavelengths and is capable of generating detectable photocurrent when light having a light intensity of less than or equal to about 50 Lux is directed towards the photodetector device.

Abstract: An organic electroluminescent device having a capping layer composed of material having a high refractive index, excelling in thin film stability and durability and having no absorption in the respective wavelength ranges of blue, green, and red is provided to improve device characteristics of the organic electroluminescent device, particularly to greatly improve light extraction efficiency. The organic electroluminescent device has at least an anode electrode, a hole transport layer, a light emitting layer, an electron transport layer, a cathode electrode, and the capping layer in this order, wherein the capping layer contains an arylamine compound (X) having a structure in which two triphenylamine structures are joined within a molecule via a single bond or a divalent group that does not contain a heteroatom.

Abstract: An electronic device includes: a substrate including a through hole; a connecting element disposed in the through hole; a first insulating layer disposed on the substrate and including a first via; a first conductive element disposed on the first insulating layer and electrically connected to the connecting element through the first via; a second insulating layer disposed on the first conductive element and comprising a second via; a second conductive element disposed on the second insulating layer and electrically connected to the first conductive element through the second via; and a third conductive element disposed under the substrate and electrically connected to the connecting element, wherein, in a cross-sectional view of the electronic device, the second via is not overlapping with the connecting element.

Abstract: A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

Abstract: A light emitting diode includes a first semiconductor layer, a second semiconductor layer, a first pad, a second pad, and a protection bump. The first semiconductor layer and the second semiconductor layer are overlapping with each other. An area of a first surface of the first semiconductor layer is larger than an area of a second surface of the second semiconductor layer. The first surface faces the second surface. The first pad is electrically connected to the first semiconductor layer. The second pad is electrically connected to the second semiconductor layer. The protection bump is located between the first pad and the second pad.

Abstract: A light emitting module includes a light guide plate including a first face, a second face opposing the first face, and a through part penetrating between the first face and the second face, a light emitting device disposed in the through part on a second face side, a light transmissive member disposed on the light emitting device in the through hole on a first face side and between the light emitting device and a lateral wall of the through part, and a first light reflecting member disposed between an upper face of the light emitting device and the light transmissive member while being in contact with the upper face of the light emitting device.

Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.

Abstract: A foldable, flexible display apparatus includes a flexible display panel which displays an image and includes a display side on which the image is displayed and of which portions thereof face each other in a folded state of the flexible display apparatus; a cover window on the display side of the flexible display panel and including: a window film comprising a transparent plastic film having a modulus of elasticity of about 6.3 gigapascals or more; and a coating layer on the window film, and configured to be transparent and to protect the window film from physical damage thereto; and an adhesive layer between the window film and the display side of the flexible display panel, and configured to have elasticity and bond the window film and the flexible display panel to each other.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: A display apparatus including a display panel, a light source configured to emit light, and a light guide disposed on the light source and covering a side of the light source, the light source including a substrate, a light emitter including a light emitting stacked layer and disposed on the substrate, a light blocking layer disposed on a side surface of the light emitting stacked layer, and a reflector disposed between the substrate and the light guide, in which the light emitter has a first length direction and a second length direction, wherein orientation angles of the light emitter in the first and second length directions are different from each other, the substrate includes a first pad electrode and second pad electrode electrically connected to the light emitter, and the first and second pad electrodes are spaced apart from each other by at least 50 ?m.

Abstract: A display panel or a display device with high display quality is provided. The display panel includes a light-emitting element, an insulating layer, a protective layer, and a conductive layer. The light-emitting element includes a first electrode, a light-emitting layer, and a second electrode. The light-emitting element emits light to the protective layer side. The insulating layer includes a first opening overlapping with the first electrode. The insulating layer covers an end portion of the first electrode. The light-emitting layer overlaps with the first electrode through the first opening. The second electrode is positioned over the light-emitting layer. The protective layer is over and in contact with the second electrode. The protective layer functions as a protective layer of the light-emitting element. The protective layer includes a second opening overlapping with the insulating layer. The conductive layer is connected to the second electrode through the second opening.

Abstract: A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: In an embodiment, the optoelectronic semiconductor component (1) comprises a semiconductor layer sequence (2) with an active zone (22) for generating a radiation. On an bottom side (20) of the semiconductor layer sequence (2) there is an electrically insulating separation layer (3) with several openings (32). An adhesion-promoting layer (4) is located next to the openings (32) on a side of the separation layer (3) facing away from the semiconductor layer sequence (2). A continuous metallization layer (5) is located on a side of the adhesion-promoting layer (4) facing away from the semiconductor layer sequence (2). The semiconductor layer sequence (2) is electrically contacted in the openings (32) directly by the metallization layer (5). The metallization layer (5) and the openings (32) are spaced from the active zone (22) in the direction perpendicular to the separation layer (3).

Abstract: A semiconductor device includes: a package including: a heat dissipating body comprising a metal, an insulting part surrounding the heat dissipating body, one or more semiconductor laser elements disposed on the heat dissipating body, at least one outer metal layer that is located on a lower surface of the insulting part and is spaced from a lower surface of the heat dissipating body; a mounting substrate including: at least one first metal pattern located at an upper surface of the mounting substrate, and a second metal pattern located at the upper surface of the mounting substrate; at least one first bonding member located between the at least one outer metal layer and the first metal pattern; and a second bonding member located between the lower surface of the heat dissipating body and the second metal pattern, wherein the second bonding member comprises a metal material.

Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

Abstract: A protective film includes a transparent substrate layer and a transparent hardened layer covering a surface of the transparent substrate layer. The transparent hardened layer includes a first region covering a middle portion of the transparent substrate layer and a second region covering an edge of the transparent substrate layer, where hardness of the first region is greater than hardness of the second region. The transparent hardened layer includes the first region and the second region.

Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.

Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: A display device of the present disclosure includes: an organic EL layer deposited on a circuit unit formed on a substrate via an insulating film; a cathode electrode deposited on the organic EL layer; a groove formed along a direction of arrangement of pixels between the pixels in the insulating film; and a contact electrode that is provided at a bottom of the groove and receives a predetermined potential. Moreover, the cathode electrode is electrically connected to the contact electrode in the groove.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A method of manufacturing a semiconductor structure includes following operations. A first die is provided. A first molding is formed to encapsulate the first die. A second die is disposed over the first molding. A mold chase is disposed over the second die and the first molding. The mold chase includes a protrusion protruded from the mold chase towards the first molding. A molding material is disposed between the mold chase and the first molding. A second molding is formed to surround the second die. The second die is at least partially covered by the second molding. The disposing of the mold chase includes surrounding the protrusion of the mold chase by the molding material.

Abstract: A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.

Abstract: In some examples, an article comprises a semiconductor including at least one integrated circuit and an inorganic semiconductor layer bonded to a first surface of the semiconductor. The inorganic semiconductor layer comprises a ?LED array, and the first surface of the semiconductor extends beyond a first edge of the inorganic semiconductor layer. The first edge of the inorganic semiconductor layer is oriented substantially perpendicular to the first surface of the semiconductor.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Abstract: A microLED based optical chip-to-chip interconnect may optically couple chips in a variety of ways. The microLEDs may be positioned within a waveguide, and the interconnects may be arranged as direct connections, in bus topologies, or as repeaters.

Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.

Abstract: A display apparatus including a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the substrate and configured to emit red light, green light, and blue light, respectively, partition walls disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel, and configured to not transmit light, in which the first sub-pixel, the second sub-pixel, and the third sub-pixel include a first light emitting cell, a second light emitting cell, and a third light emitting cell, respectively, and a height of each of the first, second, and third light emitting cells is lower than a height of the partition walls, and a difference between the height of the partition walls and the height of each of the first, second, and third light emitting cells is less than 100 ?m.

Abstract: An embodiment of present invention discloses a light-emitting device which includes a first light-emitting area, a second light-emitting area, and a third light-emitting area. The first light-emitting area emits a red light and includes a first light-emitting unit. The second light-emitting area emits a blue light and includes a second light-emitting unit. The third light-emitting area emits a green light and includes a third light-emitting unit. The first light-emitting area is larger than the second light-emitting area and larger than the third light-emitting area. Each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit has a width of less than 100 ?m and a length of less than 100 ?m.

Abstract: A LED filament including a linear array of LEDs arranged on a carrier substrate, wherein the linear array is divided into two separate longitudinal sections, a first longitudinal section including only LEDs configured to emit white light, and a second longitudinal section including only LEDs configured to emit color controllable light. The present invention suggests confining the color LEDs to the second longitudinal section of the array, so that the first longitudinal section of the array is capable of emitting homogenous white light of a color temperature in the range of the LEDs in that section.

Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.