Abstract: A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member.

Abstract: A light-emitting device includes a light emitting element, a resin package defining a recessed portion serving as a mounting region of the light emitting element, gate marks each formed on an outer side surface of the resin package, and leads disposed on the bottom surface of the recessed portion and electrically connected to the light emitting element. The light emitting element is mounted on the lead. The gate marks include a first gate mark formed on a first outer side surface of the resin package and a second gate mark formed on an outer side surface which is different than the first outer side surface.

Abstract: A light emitting diode (LED) package including a carrier, a housing, at least one LED chip and at least one electrostatic discharge protector (ESD protector) is provided. The housing encapsulating a portion of the carrier has at least one first opening, at least one second opening and a barricade. The barricade separates the first opening from the second opening. The first opening and the second opening expose a first surface of the carrier. The LED chip is disposed on the first surface of the carrier, located in the first opening, and electrically connected to the carrier. The ESD protector is disposed on the first surface of the carrier, located in the second opening, and electrically connected to the carrier.

Abstract: A semiconductor device without cantilevered leads uses conductive wires (120) to connect the chip terminals to the leads (110), and a package compound (140) to encapsulate the chip surface (101a) with the terminals, the wires, and the lead surfaces with the attached wires. The chip surface (101b) opposite the terminals together with portions (103) of the chip sidewalls protrude from the package, allowing an unimpeded thermal contact of the protruding chip surface to a substrate (201) to optimize the thermal flux from the chip to the substrate. Solder bodies (250) attached to the compound-free lead surfaces (113b) can be connected to the substrate so that the solder bodies are as elongated as the protruding chip height, facilitating the void-free distribution of an underfill compound into the space between chip and substrate, and improving the absorption of thermomechanical stresses during device operation.

Abstract: A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps.

Abstract: An electronic component is attached to a product, using a transfer method involving the use of a transfer sheet including a substrate sheet and at least one transfer layer covering a portion of the front surface of the substrate sheet. The transfer method consists in: placing the transfer layer in contact with the product; applying a pressure against the back surface of the substrate sheet; and finally removing the substrate sheet, said at least one transfer layer remaining affixed to the product. In addition, the attachment method includes a step prior to the transfer method, during which at least one electronic assembly including at least one electronic chip attached to at least one wire is positioned between the product and the substrate sheet, such that at least one portion of each assembly is held in place by a transfer layer following the removal of the substrate sheet.

Abstract: A light-emitting diode device and a method for manufacturing the same are described. The light-emitting diode device includes a metal heat dissipation bulk, a frame, a light-emitting diode chip and a package encapsulant. The metal heat dissipation bulk includes a curve protrusion ring. The frame is disposed on the metal heat dissipation bulk outside the curve protrusion ring. The frame includes at least two electrode pads respectively disposed at two sides of the curve protrusion ring. The light-emitting diode chip is disposed on the metal heat dissipation bulk in an inner side of the curve protrusion ring. The light-emitting diode chip has a first electrode and a second electrode of different conductivity types, and the first electrode and the second electrode are electrically connected to the electrode pads respectively. The package encapsulant encapsulates the light-emitting diode chip, the curve protrusion ring, and a portion of each electrode pad.

Abstract: Solid state lighting (SSL) devices (e.g., devices with light emitting diodes) with reduced dimensions (e.g., thicknesses) and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first region and a second region laterally spaced apart from the first region and an insulating material between and electrically isolating the first and second regions. The SSL device also includes a conductive material between the first and second regions and adjacent the insulating material to electrically couple the first and second regions in series.

Abstract: A light emitting device having a wavelength converting layer. The light emitting device includes a substrate; a semiconductor stack having a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer disposed on the substrate; a first wavelength converting layer covering a top of the semiconductor stack; and a second wavelength converting layer disposed on the first wavelength converting layer and having a width narrower than the first wavelength converting layer. The second wavelength converting layer is employed, thereby being capable of reducing a color variation according to a viewing angle.

Abstract: The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units.

Abstract: Embodiments are about light emitting devices having high bonding force between the support member and the light emitting structure and reliability. The light emitting device in an embodiment may include a support member, a light emitting structure disposed on the support member, wherein the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, an electrode bonding layer disposed between the support member and the light emitting structure, and a third semiconductor layer disposed between the support member and the electrode bonding layer, wherein the third semiconductor including at least one of elements included in at least one of the first and second layers.

Abstract: LED lighting systems and methods of manufacture, which include one or more of the following: (1) a solid state active heat sink for cooling one or more LED chips; (2) a front end power supply providing high voltage to the active heat sink component; (3) a front end power supply that provides a relatively low voltage load to a plurality of LED chips; (4) a front end hybrid power supply with both a high and low voltage output, wherein the high voltage is at least 2 kV higher than the low voltage output; (5) an over-mold encapsulating the front end components, wherein the over-mold is provided by a reaction injection molding process; (6) a digital micro-minor device (DMD) for providing pixilated light, color mixing, and intensity control; and (7) an optic having quantum dots (QDs), wherein the light output of the DMD activates for the QDs.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A semiconductor light emitting device (A) includes a semiconductor light emitting element (2) including a light emitting layer (22), a lead (1) formed with a reflector (11) that surrounds the semiconductor light emitting element (2), a light transmitting resin (4) covering the semiconductor light emitting element (2). The reflector (11) of the lead (1) includes a recess (12) at the bottom surface. The semiconductor light emitting element (2) is mounted to a bottom surface of the recess (12), with the light emitting layer (22) positioned outside the recess (12). A highly heat conductive material (3) having a thermal conductivity higher than that of the light transmitting resin (4) is loaded between the semiconductor light emitting element (2) and the recess (12).

Abstract: A light emitting diode apparatus comprises a substrate having a circuit pattern, a reflection layer disposed on the substrate, at least one light emitting element disposed on the reflection layer, a reflector disposed around the at t one light emitting element, a sealing material formed over the at least one light emitting element and a phosphor layer disposed over the sealing material. The light emitting element comprises a conductive portion electrically coupled to the circuit pattern. In one embodiment, a plurality of light emitting elements are linearly arrayed, and a spacer is disposed between every two adjacent light emitting elements.

Abstract: The present invention provides an active matrix substrate and a display device that have sufficient resistance to a surge current without formation of a short ring and that enable narrowing of a picture-frame region. The present invention is an active matrix substrate on which a plurality of pixels are formed in a matrix shape. The active matrix substrate includes, on one principal surface side of the substrate: a terminal; a semiconductor element; wiring that is formed in a picture-frame region of the substrate and that connects the terminal and the semiconductor element; and an annular conductive portion formed through an insulation layer on at least one of an upper layer side and a lower layer side of the wiring. The wiring comprises a meander structure including a meander-shaped portion. A portion of the conductive portion is disposed along the meander-shaped portion.

Abstract: Light-emitting device packages which may be manufactured using post-molding and with improved heat emission performance and optical quality, and methods of manufacturing the light-emitting device packages. The light-emitting device package includes: a heat dissipation pad; a light-emitting device formed on the heat dissipation pad; a pair of lead frames disposed to be spaced apart from each other at both sides of the light-emitting device and the heat dissipation pad; a molding member surrounding the side of the light-emitting device except for an emission surface of the light-emitting device; and bonding wires for electrically connecting the lead frames to the light-emitting device.

Abstract: A package includes at least a chip encapsulated by an encapsulant. Conductive bumps are disposed on a first surface of the chip, for a circuit board to be disposed thereon. A phosphor layer is formed on a second surface of the chip opposing the first surface. The package further comprises a light-pervious mask that covers the phosphor layer. Since the phosphor layer and the light-pervious mask are directly formed on the chip, the chip is prevented from being disposed in the groove of the substrate. As a result, the wet etching process is omitted, and the fabrication cost is reduced. A method of fabricating the package is also provided.

Abstract: A light emitting device includes a semiconductor package, and a mounting board having first and second wiring components respectively connected to first and second conduction members of the semiconductor package. The semiconductor package includes: a light emitting element; a first conduction member, on one side of which the light emitting element is placed; and a second conduction member whose surface area is smaller than that of the first conduction member, the other side of the first and second conduction members, forms the lower face of the semiconductor package. The mounting board includes: a narrow part and a wide part wider than the narrow part, which are formed on the first and second wiring components. At least the narrow part is joined to the first and second conduction members, and the first wiring component has a recess in its interior.

Abstract: A light emitting device includes a light emitting structure divided into a plurality of light emitting cells and a boundary region, the light emitting cells including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, respectively; a first electrode disposed on each of the light emitting cells; first conductive layers disposed under the light emitting cells; at least one second conductive layer disposed under the first conductive layers; a first insulation layer disposed between each of the first conductive layers, and between the first conductive layers and the at least one second conductive layer; and a connecting electrode connecting the first electrode on one light emitting cell with the at least one second conductive layer under another light emitting cell. The at least one second conductive layer is connected with one of the first conductive layers through the first insulation layer.

Abstract: An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.

Abstract: A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion.

Abstract: The present invention provides a lighting device and method for forming the same. The lighting device comprises a base having a first surface, a conductive wiring layer formed on the first surface, and a light emitting diode module comprising a substrate and at least one light emitting diode disposed on the substrate wherein the substrate of the light emitting diode module is disposed on the conductive wiring layer by a surface mount method. In one embodiment, the base is preferably made of ceramics.

Abstract: A light emitting diode (LED) cup lamp including a base, an LED light source and a light guiding device is disclosed. The LED light source is disposed on the base. The light guiding device is disposed above the LED light source. The light guiding device has a light guiding region facing the LED light source. After the light emitted from the LED light source is guided through the light guiding region, the light is further guided by other parts of the light guiding device so that the light is emitted towards the exterior of the LED cup lamp.

Abstract: A method for manufacturing a light emitting element including the steps of (A) sequentially forming on a substrate a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type; (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region; and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.

Abstract: A leadframe includes two spaced apart conductive legs, each of which includes a base section, and a first extension section extending from a bottom end of the base section in a direction away from the other one of the conductive legs. At least one of the conductive legs further includes a second extension section that extends from a top end of the base section thereof in the same direction as the first extension section for fixing the light-emitting diode chip. The heat generated by the light-emitting diode chip can be dissipated through a shortest heat-dissipating route, thereby increasing the heat-dissipating rate.

Abstract: Standardized photon building blocks are used to make both discrete light emitters as well as array products. Each photon building block has one or more LED chips mounted on a substrate. No electrical conductors pass between the top and bottom surfaces of the substrate. The photon building blocks are supported by an interconnect structure that is attached to a heat sink. Landing pads on the top surface of the substrate of each photon building block are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors on the interconnect structure are electrically coupled to the LED dice in the photon building blocks through the contact pads and landing pads. The bottom surface of the interconnect structure is coplanar with the bottom surfaces of the substrates of the photon building blocks.

Abstract: An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface.

Abstract: Provided is a light emitting device wherein a resin molded body having a circular or an oval recessed section at the center suppresses generation of cracks. A light emitting device (1) is provided with a light emitting element (2); a first resin molded body (10) having a plurality of outer surfaces (11), and a recessed section (10a) at the center; a first lead (20) and a second lead (30) electrically connected to the light emitting element (2); and a second resin molded body (40) applied in the recessed section (10a). The light emitting element (2) is place on the first lead (20), and the surface of the second resin molded resin (40) is permitted to be a light emitting surface. A gate notch (50) obtained by cutting a gate formed on the outer surface (11) of the first resin molded body (10) is formed on an extended line of a normal line on one point on a circular cross-section of the recessed section (10a) in the normal nine direction.

Abstract: Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.

Abstract: A light emitting device, having a first area and a second area adjacent to the first area, includes a substrate formed in the first and second areas, a first cladding layer formed above the substrate in the first area, an active layer, having first and second side surfaces, formed above the first cladding layer, a gain area having first and second end surfaces, the first end surface being provided along the second side surface, a second cladding layer formed above the active layer, a guide layer formed above the substrate in the second area, and a core layer, having third and fourth side surfaces, formed above the guide layer. The gain area is angled relative to a first normal direction to the first side surface. The first and second end surfaces are not overlapped each other in the first normal direction.

Abstract: An adhesive composition for flip-chip-mounting a chip component on a circuit board contains an alicyclic epoxy compound, an alicyclic acid anhydride curing agent, and an acrylic resin. The amount of the alicyclic acid anhydride curing agent is 80 to 120 parts by mass based on 100 parts by mass of the alicyclic epoxy compound, and the amount of the acrylic resin is 5 to 50 parts by mass based on 100 parts by mass of the total amount of the alicyclic epoxy compound, the alicyclic acid anhydride curing agent, and the acrylic resin. The acrylic resin is a resin obtained by copolymerization of 100 parts by mass of alkyl (meth)acrylate and 2 to 100 parts by mass of glycidyl methacrylate and having a water absorption rate of 1.2% or less.

Abstract: A lead frame for an optical semiconductor device, having: a layer 2 composed of silver or a silver alloy formed on an electrically-conductive substrate 1; a metal oxide layer 3 of a metal other than silver as an outer layer of the layer composed of silver or a silver alloy, wherein the metal oxide layer 3 is colorless and transparent or silver gray in color, and has a thickness thereof from 0.001 to 0.2 ?m; a method of producing the same; and an optical semiconductor device utilizing the same.

Abstract: An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence.

Abstract: Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: Methods are disclosed, such as those involving increasing the density of isolated features in an integrated circuit. Also disclosed are structures associated with the methods. In one or more embodiments, contacts are formed on pitch with other structures, such as conductive interconnects. The interconnects may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. The features in the selectively definable material are trimmed to desired dimensions. Spacer material is blanket deposited over the features in the selectively definable material and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed to leave a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts.

Abstract: A submount for an electronic device includes a substrate formed of a bulk material including first and second major surfaces on opposite sides of the substrate, a surface insulating layer on the first major surface of the substrate, and a die attach pad on the surface insulating layer. The die attach pad may be electrically insulated from the substrate by the surface insulating layer. The submount further includes a heatsink contact pad on the second major surface of the substrate, and a thermal conduction member extending from the second major surface of the conductive semiconductor substrate through the substrate toward the first major surface of the substrate. The thermal conduction member has a higher thermal conductivity than a thermal conductivity of the bulk material of the substrate.

Abstract: A light-emitting device package uses a metal layer as a reflective region and includes a light-emitting device chip and an electrode pad that are disposed on an insulating layer. In addition, the electrode pad and an electrode pattern of a printed circuit board are connected to each other by an electrode pattern formed of conductive ink. A method of manufacturing a light-emitting device package includes forming an insulating layer on a metal layer, and bonding a light-emitting device chip and an electrode pad on the insulating layer. The electrode pad and a printed circuit board are connected to each other by conductive ink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: An thin film transistor array and a manufacturing method thereof are provided. A thin film transistor (TFT) array substrate comprises a base substrate, horizontal gate lines, reticulated storage capacitor electrode (Vcom) lines, longitudinal data lines defining pixel units with the horizontal gate lines. The Vcom lines corresponding to the pixel units in each row of the reticulated Vcom line are connected with each other, and the reticulated Vcom lines are connected with an integrated-circuit (IC) element through Vcom line IC terminals; if the number of the data lines is N, the number of the Vcom line IC terminals is more than 0 and less than N+1; and at least one Vcom line longitudinal electric connection section is provided between the Vcom lines in two adjacent rows.

Abstract: A method of forming an ohmic contact for a semiconductor device can be provided by thinning a substrate to provide a reduced thickness substrate and providing a metal on the reduced thickness substrate. Laser annealing can be performed at a location of the metal and the reduced thickness substrate at an energy level to form a metal-substrate material to provide the ohmic contact thereat.

Abstract: An electronic component includes a lead frame assembly, an insert, a semiconductor chip and an encapsulation compound. The lead frame assembly includes a mounting hole, a die pad, a plurality of bonding fingers and a plurality of lead fingers. The insert includes a hollow center and is provided at the mounting hole of the lead frame assembly. The semiconductor chip is arranged on the die pad and includes contact areas on its surface. A plurality of electrical contacts respectively links the contact areas of the semiconductor chip to the bonding fingers of the lead frame assembly. An encapsulating compound encloses the insert, the semiconductor chip, and the electrical contacts, however, leaves the hollow center of the insert uncovered.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact is electrically connected to the first layer in the second segment.

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Abstract: LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior to certain critical metallization steps. This helps avoid damage to the metalized part that might occur as a result of the high mounting or bonding temperature for the lens. One embodiment of an LED chip comprises a flip-chip LED and a lens mounted to the topmost surface of the flip-chip LED. Lenses can be bonded to LEDs at the wafer level or at the chip level. The lens comprises a non-polymer material and the LED chip is characterized as having substantially no polymer materials in contact with the LED chip.

Abstract: A light-emitting device includes a light-emitting layer and a fine structure interposed between the light-emitting layer and a substrate, wherein the fine structure includes a laminate of a first fine substructure and a second fine substructure, the first and second fine substructures each includes a first member and second members disposed in the first member, the second members having a refractive index different from the refractive index of the first member and being periodically arranged in a direction parallel to a surface of the substrate, and the second members of the first fine substructure and the second members of the second fine substructure have different arrangement periods.

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.

Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.