Abstract: In order to connect a semiconductor device including an integrated circuit to an external circuit typified by an antenna, the shape of the contact electrode to be formed in the semiconductor device is devised, so that bad connection between the external circuit and the contact electrode is not easily caused and the contact electrode with high reliability is provided. The contact electrode is formed by a screen printing method using a squeegee having a chamfered corner or having a wedge shape. The contact electrode has a peripheral portion and a central portion. The peripheral portion has a tapered portion with its film thickness gradually decreasing from the central portion toward the end portion, and the central portion has a projection portion that continues from the tapered portion.

Abstract: A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped. The first semiconductor chip and the second semiconductor chip have non-opposed areas which are not opposed to each other. The first multilayer interconnect layer has a first external connection terminal in the non-opposed area, and the second multilayer interconnect layer has a second external connection terminal in the non-opposed area.

Abstract: A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode. The cap layer covers the light emitting diode die.

Abstract: A light emitting device that includes a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one light emitting device cell, and a second contact section on the at least one light emitting device cell.

Abstract: A display device is provided with a reinforced power line. The display device includes a common power line. A light emission layer is interposed between a first and a second electrode. A passivation layer is formed over the second electrode and has a stepped shape. An auxiliary metal layer is coupled to a common power line. At least a portion of the auxiliary metal layer is formed over the passivation layer and has a shape that follows the stepped shape of the passivation layer.

Abstract: A light emitting diode (LED) module includes a lead frame having a number (N) of conducting arms spaced apart from each other, where N?3, and at least one LED die mounted on one of any two neighbor conducting arms. Any two neighbor conducting arms are electrically coupled each other.

Abstract: A multiple element emitter package is disclosed for increasing color fidelity and heat dissipation, improving current control, and increasing rigidity of the package assembly. In one embodiment, the package comprises a casing with a cavity extending into the interior of the casing from a first main surface. A lead frame is at least partially encased by the casing, the lead frame comprising a plurality of electrically conductive parts carrying a linear array of LEDs. Electrically conductive parts, separate from the parts carrying the LEDs, have a connection pad, wherein the LEDs are electrically coupled to the connection pad, such as by a wire bond. This arrangement allows for a respective electrical signal to be applied to each of the LEDs. The emitter package may be substantially waterproof, and an array of the emitter packages may be used in an LED display such as an indoor and/or outdoor LED screen.

Abstract: A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.

Abstract: An object is to provide a semiconductor device which is not easily broken even if stressed externally and a method for manufacturing such a semiconductor device. A semiconductor device includes an element layer including a transistor in which a channel is formed in a semiconductor layer and insulating layers which are formed as an upper layer and a lower layer of the transistor respectively, and a plurality of projecting members provided at intervals of from 2 to 200 ?m on a surface of the element layer. The longitudinal elastic modulus of the material for forming the plurality of projecting members is lower than that of the materials of the insulating layers.

Abstract: An LED package includes an insulated frame, a first metallic conductor and a second metallic conductor, a chip and an encapsulation. The insulated frame has a receiving groove defined therein. The two metallic conductors are both mounted on bottom of the insulated frame and separated from each other. The chip is placed in the receiving groove and electrically connected to the two metallic conductors. The encapsulation is located in the receiving groove. The first metallic conductor and the second metallic conductor each comprise a mounting portion exposed to the receiving groove and a reflecting portion extending from the mounting portion into the insulated frame. The first reflecting portion and the second reflecting portion cooperatively surround the receiving groove of the insulated frame.

Abstract: A support module (1), comprising a conducting layer (2) having a trough hole (5) and a receiving surface adapted to receive a solid state light source (3) with the electrical contact pad (4) being aligned with the through hole (5). The support module (1) further comprises an electrical insulation element (8) and at least one contact pin (9), extending through the electrical insulation element (8), and protruding through the through hole (5). Furthermore, the electrical insulation element (8) comprises a channel (10) allowing access to the end of the contact pin (9) and the electrical contact pad (4) of the solid state light source (3) received by the surface of the conducting layer (2). Such a channel makes it possible to reach the end of the contact pin and the contact pad through the insulation element with a soldering tool. Thus, it is possible to attach the solid state light source on a metal surface by soldering the contact pin to the contact pad.

Abstract: A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning the metal plate at the bottom of the light-emitting diode structure. This metal plate may then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively coupled through several heat conduction layers to a large heat sink that may be included in the structure.

Abstract: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

Abstract: An LED module includes a first dielectric layer, and a first patterned conductive layer having first, second, and third die-bonding pads. Each die-bonding pad includes a pad body having a die-bonding area, and an extension extended from the pad body. The extension of the first die-bonding pad extends in proximity to the die-bonding area of the second die-bonding pad. The extension of the second die-bonding pad extends in proximity to the die-bonding area of the third die-bonding cad. A second dielectric layer disposed on the first patterned conductive layer includes three dielectric members corresponding respectively to the die-bonding pads of the first patterned conductive layer. Each dielectric member includes a chip-receiving hole exposing the die-bonding area of a respective die-bonding pad for attachment of an LED chip thereto, and a wire-passage hole spaced apart from the chip-receiving hole to expose partially the first patterned conductive layer for bonding a wire.

Abstract: An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence. A bottom surface of the n-type GaN layer connecting the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity.

Abstract: A multiple element emitter package is disclosed for increasing color fidelity and heat dissipation, improving current control, increasing rigidity of the package assembly. In one embodiment, the package comprises a surface-mount device a casing with a cavity extending into the interior of the casing from a first main surface is provided. A lead frame is at least partially encased by the casing, the lead frame comprising a plurality of electrically conductive parts carrying a linear array of light emitting devices (LEDs). Electrically conductive parts, separate from parts carrying the LEDs have a connection pad, wherein the LEDs are electrically coupled to a connection pad, such as by a wire bond. This lead frame arrangement allows for a respective electrical signal can be applied to each of the LEDs. The emitter package may be substantially waterproof, and an array of the emitter packages may be used in an LED display such as an indoor and/or outdoor LED screen.

Abstract: A light emitting device has a light emitting layer having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a reflecting layer provided on a side of one surface of the light emitting layer, which reflects a light emitted from the active layer, a supporting substrate provided on an opposite side of the reflecting layer with respect to the light emitting layer, which supports the light emitting layer via an adhesion layer, an ohmic contact portion provided on a part of the reflecting layer, which electrically connects between the reflecting layer and the light emitting layer, and convexo-concave portions formed on other surface of the light emitting layer and side surfaces of the light emitting layer, respectively, and an insulating film configured to cover the convexo-concave portions.

Abstract: An organic light emitting diode (OLED) display includes a substrate, an OLED on the substrate, and an encapsulation layer on the substrate with the OLED therebetween. The encapsulation layer includes a plurality of metal layers. Two of the plurality of metal layers are directly attached to each other.

Abstract: A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED.

Abstract: Disclosed is a light emitting device module including a package body, a first lead frame and a second lead frame provided on the package body, a light emitting device electrically connected to the first lead frame and the second lead frame, a first pad and a second pad respectively formed on the lower surfaces of the first lead frame and the second lead frame, and a third pad formed on the lower surface of the package body, wherein at least one of the first pad, the second pad and the third pad includes a plurality of sub-pads.

Abstract: A waterproof transparent LED shield structure has a singular LED component with a circuit board and an LED lighting component, with the circuit board connected with protruding electric pins. A hard transparent shield has a base board and a shield. The base board covers the front side of the circuit board, and is configured with a rim to rest against the edge of the circuit board. The shield has a circular side wall and a top end and encloses the LED lighting component. A soft waterproof covering body covers and is attached to the outside of the LED component and hard transparent shield. The soft waterproof covering has a seat part and a projecting part. The seat covers the circuit board, the connecting end of the electric pins and the base board and rim, and the protruding end of the electric pins extends out of the seat part.

Abstract: The invention includes one or more LED elements, a silicon substrate on which the LED elements are mounted via micro bumps and internally formed wiring is connected to the micro bumps, a heat insulation organic substrate which is stuck to the opposite side of the LED elements-mounting side of the silicon substrate and has through-holes in which the wiring goes through, a chip-mounting substrate which is stuck to the opposite side of the silicon substrate side of the heat insulation organic substrate and internally formed wiring is connected to wiring in the through-holes of the heat insulation organic substrate, and an LED control circuit chip which is connected to the wiring of the chip-mounting substrate via micro bumps, and mounted via the micro bumps on the opposite side of the heat insulation organic substrate side of the chip-mounting substrate.

Abstract: An LED driving circuit package includes a rectification unit to receive an AC power voltage and rectify the AC power voltage to generate a ripple voltage, an LED driving switching unit including a plurality of switch units and a plurality of current control units. The LED driving circuit package further includes a low voltage control unit including a circuit power supply unit to generate low voltage power, a voltage detection unit to detect a magnitude of the ripple voltage, a reference frequency generation unit to generate a reference frequency, and a reference pulse generation unit to generate a reference pulse for controlling the operation of the LED driving switch unit according to the reference frequency and a magnitude of the voltage detected by the voltage detection unit.

Abstract: A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or a control element. A solid state emitter package includes a principally red solid state emitter having peak emissions within 590 nm to 680 nm, a principally blue solid state emitter having peak emissions within 400 nm to 480 nm, and at least one of a common leadframe, common substrate, and common reflector, with the package being devoid of any principally green solid state emitters having peak emissions between 510 nm and 575 nm.

Abstract: A semiconductor light emitting device includes: a base portion having a concave portion formed in one of major surfaces thereof; and a light emitting element mounted on a bottom surface of the concave portion of the base portion. The base portion comprises a side wall portion that surrounds the light emitting element. The light emitting element is covered with a resin portion filled in the concave portion. At least a part of an upper surface of the resin portion is positioned closer to the bottom surface of the concave portion than an upper surface of the side wall portion.

Abstract: An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.

Abstract: A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure.

Abstract: An LED device with improved circuit board LED support structure is presented. A top surface of a thermally-conductive substrate of this LED device comprises a thermally-conductive pillar. The pillar is not covered with a dielectric layer and an LED package is arranged directly on the pillar with the LED packages bottom thermally-conductive plate in direct contact with the pillar top surface.

Abstract: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the second semiconductor layer; a second electrode over the second semiconductor layer; and a connection member having one end making contact with the first semiconductor layer and the other end making contact with the second semiconductor layer to form a schottky contact with respect to one of the first and second semiconductor layers.

Abstract: A method for forming a fine exposure pattern where a width and an interval of the pattern are each 1CD, by first exposing a photoresist by using an exposure mask where an interval ratio of a light shielding part and a light transmission part is 2CD:1CD to 4CD:1CD, and then second exposing the photoresist after the exposure mask is shifted at a predetermined interval, or second exposing the photoresist by using an exposure mask formed at a position where a light transmission part is shifted at a predetermined interval, and developing the photoresist, such that it is possible to form a display device having a pixel electrode including a plurality of fine branch electrodes having a smaller width and interval than a resolution of an exposure apparatus.

Abstract: The present invention relates to a light emitting diode (LED), which enables a filler material for filling up a hole or opening of a substrate to prevent a resin of an encapsulant formed on the substrate from leaking and to enhance cohesion between the substrate and a resin portion formed in the hole or opening, and a method for fabricating the LED package. According to an embodiment of the present invention, there is provided an LED package, which comprises an LED chip; a substrate having the LED chip mounted thereon, the substrate having a hole or opening formed therein; an encapsulant formed on the substrate to encapsulate the LED chip; a resin portion for filling in the hole or opening; and a filler material for filling up a gap between the resin portion and the substrate.

Abstract: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other.

Abstract: An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal line in a row except for an i-th row is set to a constant electric potential in a period except for when a gate signal line (106) in the i-th row is selected. A gate signal line 111 in an (i?1)-th row is also used as an electric current supply line for an EL element (103) controlled by the gate signal line (106) in the i-th row. Thus, wiring number is reduced and high numerical aperture is realized.

Abstract: A light emitting diode is provided which includes an active region in combination with a current spreading layer; and a crystalline epitaxial film light extraction layer in contact with the current spreading layer, the light extraction layer being patterned with nano/micro structures which increase extraction of light emitted from the active region.

Abstract: A surface mounted LED package includes an insulated body, a first conductive part, a second conductive part, a LED chip and a bonding wire. The insulated body has a receiving portion and a bond-pad island. The receiving portion is formed with an inner side wall and a flat bottom. The bond-pad island is formed with a bonding plane. The first conductive part has a LED chip and a first solder pin extended to an outer surface of the insulated body. The second conductive part has a second contacting portion and a second solder pin extended to an outer surface of the insulated body. The LED chip is disposed on the second contacting portion. The bonding wire connects the LED chip to the first contacting portion. The present application further provides a manufacturing method for surface mounted LED package.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: The present invention relates to a light emitting device. In the light emitting device of the present invention, light emitting cells of a first light emitting cell block and light emitting cells of a second light emitting cell block corresponding thereto are connected in parallel so that a current can cross the light emitting cells of the first and second light emitting cell blocks. Thus, even though a leakage current occurs in some of light emitting cells, the current is allowed to cross light emitting cells connected in another direction, thereby preventing overload on some of the light emitting cells due to the leakage current and ensuring uniform light emission and prolonged life span in the AC light emitting device.

Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.

Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.

Abstract: A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1?; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1?.

Abstract: A light-emitting element mounting substrate includes an insulative substrate, a pair of wiring patterns formed on one surface of the substrate, and a pair of filled portions including a metal filled in a pair of through-holes to contact the pair of wiring patterns and to be exposed on a surface of the substrate opposite to the one surface, the pair of through-holes penetrating through the substrate in a thickness direction. The pair of filled portions includes a protruding portion that protrudes outward from the pair of wiring patterns when viewed from the one surface side of the substrate.

Abstract: An LED (light emitting diode) includes a base, a pair of leads fixed on the base, a housing secured on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity to receive the chip. The cavity includes an upper chamber and a lower chamber communicating with the upper chamber. The lower chamber is gradually expanded along a top-to-bottom direction of the LED, and the upper chamber is gradually expanded along a bottom-to-top direction of the LED. The encapsulant substantially fills the lower chamber and the upper chamber.

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.

Abstract: A light-emitting element mounting substrate includes an insulative substrate including a single-sided printed circuit board, a pair of wiring patterns formed on one surface of the substrate, the wiring patterns being separated with a first distance, a pair of filled portions including a metal filled in a pair of through-holes to contact the pair of wiring patterns and to be exposed on a surface of the substrate opposite to the one surface, the pair of through-holes being formed to penetrate through the substrate in a thickness direction and to be separated with a second distance, and an insulation layer having a light reflectivity formed on the one surface of the substrate. The pair of filled portions each have a horizontal projected area of not less than 50% of each area the pair of wiring patterns, and the insulation layer includes an opening to expose the pair of wiring patterns.

Abstract: A light emitting structure includes a first hole injection layer, a first organic light emitting layer, a charge generation layer, a second hole injection layer, a second organic light emitting layer, an electron transfer layer, and a blocking member. The light emitting structure has first, second, and third sub-pixel regions. The first organic light emitting layer may be on the first hole injection layer. The charge generation layer may be on the first organic light emitting layer. The second hole injection layer may be on the charge generation layer. The second organic light emitting layer may be on the second hole injection layer. The electron transfer layer may be on the second organic light emitting layer. The blocking member may be at at least one of the first to the third sub-pixel regions.

Abstract: In a light emitting device package and manufacturing method thereof, a multi-layer structure is allocated upon a substrate, of which at least two films with different refractive indices are alternately stacked together.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: An active-matrix substrate includes: a substrate; gate lines disposed on the substrate; source lines disposed on the substrate in a direction that crosses the gate lines; a first terminal provided for each of data line blocks obtained by grouping every m-lines (m being an integer greater than or equal to 2) of the source lines into a block; a first selection circuit provided for each of the data line blocks, for causing conduction between the first terminal and at least one source line selected from among the m source lines; a second terminal provided for every n-blocks (n being an integer greater than or equal to 2) of the data line blocks; and a second selection terminal provided for every n-blocks of the data line blocks, for causing conduction between the second terminal and at least one source line selected from among the m×n source lines.

Abstract: A photoelectric transmitting or receiving device comprises a substrate, a first conductive layer, a second conductive layer and a photoelectric transducing chip. The substrate has an upper surface and a recess and is made of a composite material. The first conductive layer and the second conductive layer are formed by using laser to activate the composite material of the substrate. The first conductive layer is disposed on the bottom surface of the recess, and is extended outwardly along the inner lateral wall of the recess and the upper surface of the substrate. The second conductive layer is electrically insulated from the first conductive layer and is extended outwardly along the upper surface of the substrate. The photoelectric transducing chip is disposed on the bottom surface of the recess and electrically connected to the first conductive layer and to the second conductive layer, respectively.

Abstract: When metal junction between a first electrode and a second electrode is executed as ultrasonic bonding between metals including at least copper, the ultrasonic bonding is performed in a state that a contact interface between the first electrode and the second electrode is covered with a bonding auxiliary agent. As a result, formation of oxide at a bonding interface between the first electrode and the second electrode due to execution of the ultrasonic bonding can be suppressed. Therefore, while a desired bonding strength is ensured, ultrasonic bonding with copper used for the first electrode or the second electrode can be fulfilled and cost cuts in mounting of semiconductor devices can be achieved.