Scattering Means (e.g., Surface Roughening) (epo) Patents (Class 257/E33.074)
  • Patent number: 10811564
    Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: October 20, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
  • Patent number: 10199541
    Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: February 5, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
  • Patent number: 10193031
    Abstract: A method of applying phosphor to an unpackaged Light-Emitting Diode (LED) die includes transferring the unpackaged LED die directly to a product substrate; disposing a coverlay on the product substrate to create a cavity around the unpackaged LED die; and applying phosphor to substantially fill the cavity around the unpackaged LED die, the applying including at least one of using a squeegee to place the phosphor into the cavity, spraying the cavity with the phosphor, or disposing the phosphor in a sheet form onto the unpackaged LED die.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: January 29, 2019
    Assignee: Rohinni, LLC
    Inventors: Andrew Huska, Cody Peterson, Clinton Adams, Monica Hansen
  • Patent number: 9893040
    Abstract: This application refers to a flip-chip structure of Group III semiconductor light emitting device. The flip-chip structure includes: a substrate, a buffer layer, nitride semiconductor layer, an active layer, a P type nitride semiconductor layer, a transparent conductive layer, a first insulation layer, a P type contact metal, a N type contact metal, a second insulation layer, a flip-chip P type electrode and a flip-chip N type electrode. The substrate, the buffer layer, the N type nitride semiconductor layer, the active layer, the P type nitride semiconductor layer which grow sequentially from bottom to top form a linear convex mesa. In this application, structure of the first insulation layer which is formed by aBraggs reflective layer, a metal layer and the multilayer oxide insulation layer, acts as a reflector structure and an insulation layer to replace the flip-chip reflector structure design and the first insulation layer, so that a metal protective layer can be omitted.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: February 13, 2018
    Assignee: XIANGNENG HUALEI OPTOELECTRONIC CO., LTD
    Inventor: Shuncheng Xu
  • Patent number: 9847454
    Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: December 19, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
  • Patent number: 9040326
    Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: May 26, 2015
    Assignee: The Regents of the University of California
    Inventors: Hong Zhong, Anurag Tyagi, Kenneth J. Vampola, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 9029177
    Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: May 12, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Rainer Butendeich, Alexander Walter, Matthias Peter, Tobias Meyer, Tetsuya Taki, Hubert Maiwald
  • Patent number: 9030108
    Abstract: This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: May 12, 2015
    Inventors: David Deak, Sr., David Deak, Jr.
  • Patent number: 9012944
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: April 21, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Patent number: 9012936
    Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: April 21, 2015
    Assignee: Nichia Corporation
    Inventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
  • Patent number: 9012933
    Abstract: A light-emitting diode includes a substrate, the substrate including an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer includes a first portion and a second portion, and the second portion includes an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion includes a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: April 21, 2015
    Assignee: Epistar Corporation
    Inventors: Liang-Sheng Chi, Pei-Chia Chen, Chih-Hao Chen
  • Patent number: 9000415
    Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: April 7, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang chil Lee, Jae Hun Kim, Hwan Hui Yun
  • Patent number: 9000414
    Abstract: An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: April 7, 2015
    Assignee: Korea Photonics Technology Institute
    Inventors: Sang-Mook Kim, Jong-Hyeob Baek
  • Patent number: 8993998
    Abstract: An electro-optic device includes a first electrode, an active layer formed over and electrically connected with the first electrode, a buffer layer formed over and electrically connected with the active layer, and a second electrode formed directly on the buffer layer. The second electrode includes a plurality of nanowires interconnected into a network of nanowires. The buffer layer provides a physical barrier between the active layer and the plurality of nanowires to prevent damage to the active layer while the second electrode is formed.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 31, 2015
    Assignee: The Regents of the University of California
    Inventors: Yang Yang, Rui Zhu, Chun Chao Chen, Letian Dou, Gang Li
  • Patent number: 8994059
    Abstract: The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: March 31, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jin Woo Huh, Jeong Ik Lee, Chul Woong Joo, Doo-Hee Cho, Jin Wook Shin, Jaehyun Moon, Jun-Han Han, Joo Hyun Hwang, Hye Yong Chu, Byoung Gon Yu
  • Patent number: 8987756
    Abstract: An LED luminaire has a dye-sensitized solar cell for converting light emitted from a light source to electric energy and uses the converted electric energy. Since the dye-sensitized solar cell plays a role of a diffusion plate, the LED luminaire may diffuse light and convert wasted light into power. Further, since energy consumption and green-house gas generation decrease, it is possible to provide an environment-friendly LED luminaire. Moreover, if the power generated by the dye-sensitized solar cell is used for cooling the LED luminaire, it is possible to enhance heat dissipation efficiency of the LED luminaire.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: March 24, 2015
    Assignee: University-Industry Cooperation Group Of Kyung Hee University
    Inventors: Jeong-Tai Kim, Won-Woo Kim, Geun-Young Yun
  • Patent number: 8981420
    Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: March 17, 2015
    Assignee: Nichia Corporation
    Inventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi
  • Patent number: 8969895
    Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: March 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
  • Patent number: 8957446
    Abstract: A light emitting device comprising a carrier, a first and a second reflective layers, a first and a second micro-structures, a LED package device, a light guide device and a light directing cover is provided. The carrier comprises an upper plate and a lower plate each having a first surface and a second surface. The lower plate has a through hole. The first and second reflective layers are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The first and second micro-structures are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The LED package device is disposed below the through hole. The light guide device is connected to the LED package device. The light directing cover surrounds the light guide device.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: February 17, 2015
    Assignee: Lextar Electronics Corporation
    Inventors: Chien-Hsin Tu, Wei-Yi Hsu, Kun-Hsiung Wang
  • Patent number: 8946728
    Abstract: A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: February 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Kyu Sang Kim
  • Patent number: 8941141
    Abstract: A light-emitting device having a corner includes a light-emitting stacked layer having a first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer. A transparent conductive oxide layer is formed on the second conductivity type semiconductor layer. The upper surface of the transparent conductive oxide layer is textured. A first electrode is formed on the upper surface of the transparent conductive oxide layer. A second electrode is formed on the first conductivity type semiconductor layer. A planarization layer is formed on the transparent conductive oxide layer and the first conductivity type semiconductor layer, and a reflective layer is formed on the upper surface of the planarization layer. The projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: January 27, 2015
    Assignee: Epistar Corporation
    Inventors: Wei Yu Chen, Min-Hsun Hsieh
  • Patent number: 8936957
    Abstract: The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: January 20, 2015
    Assignee: Epistar Corporation
    Inventor: Tsung-Hsien Yang
  • Patent number: 8928022
    Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: January 6, 2015
    Assignee: Epistar Corporation
    Inventors: De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chun-Teng Ko, Min-Hsun Hsieh
  • Patent number: 8927307
    Abstract: To improve light extraction efficiency of light emitting elements such as electroluminescent elements. A first electrode 101, a light emitting layer 102, and a second electrode 103 are formed over a substrate 100, which partially constitute a light emitting element. Light produced in the light emitting layer 102 is emitted out through the second electrode 103. A plurality of three-dimensional bodies 104 are provided in contact with a surface of the second electrode 103. With the provision of the bodies 104, light totally reflected between the second electrode 103 and the air enters the bodies 104 and can be emitted through faces of the bodies 104 that are not parallel to the interface between the bodies and the second electrode 103.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: January 6, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Masahiro Takahashi
  • Patent number: 8916892
    Abstract: A light-scattering substrate which can be thinned and has improved thermal resistance, a method of manufacturing the same, an organic light-emitting display device including the same, and a method of manufacturing the organic light-emitting display device are disclosed. The light-scattering substrate includes a light-scattering layer composed of a plurality of metal nanoparticles which are attached to at least a surface of a substrate. The metal nanoparticles are formed by agglomeration of a metal on the substrate, and show a surface plasmon phenomenon.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: December 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Soo-Beom Jo, Dae-Woo Lee
  • Patent number: 8912653
    Abstract: A semiconductor wafer has integrated circuits formed thereon and a top passivation layer applied. The passivation layer is patterned and selectively etched to expose contact pads on each semiconductor die. The wafer is exposed to ionized gas causing the upper surface of passivation layer to roughen and to slightly roughen the upper surface of the contact pads. The wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer and a reconstituted wafer formed. Redistribution layers are formed to complete the semiconductor package having electrical contacts for establishing electrical connections external to the semiconductor package, after which the wafer is singulated to separate the dice.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: December 16, 2014
    Assignee: STMicroelectronics Pte Ltd.
    Inventors: Kah Wee Gan, Yonggang Jin, Anandan Ramasamy, Yun Liu
  • Patent number: 8890185
    Abstract: A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: November 18, 2014
    Assignee: Panasonic Corporation
    Inventors: Atsushi Yamada, Akira Inoue, Toshiya Yokogawa
  • Patent number: 8878210
    Abstract: A light emitting device comprising: a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of 10˜150 ?m; and a light emitting stack layer formed on the substrate.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: November 4, 2014
    Assignee: Epistar Corporation
    Inventor: Tzu-Chieh Hsu
  • Patent number: 8872204
    Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 ?m2 and 6.2×104 ?m2.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: October 28, 2014
    Assignee: Epistar Corporation
    Inventors: Yu-Chen Yang, Li-Ping Jou, Jui-Hung Yeh, Chien-Fu Shen
  • Patent number: 8866168
    Abstract: The present invention provides a multicolor LED assembly packaged with improved and controlled color mixing to create a more uniform color mixture. The assembly includes at least one lens overlying an encapsulant which encapsulates a plurality of LED dies. The lens includes a top surface and a bottom surface with the contour of the bottom surface designed to redirect light from each of the LED dies in different directions towards the top surface of the lens. The contoured shaped of the bottom surface of the lens redirects light from each of the plurality of LED dies such that illuminance and luminous intensity distributions of the plurality of LED dies substantially overlap, wherein the deviation from complete overlap is less than a predetermined amount which is substantially imperceptible to the average human eye.
    Type: Grant
    Filed: April 18, 2007
    Date of Patent: October 21, 2014
    Assignee: Lighting Science Group Corporation
    Inventors: Edward Bailey, Shane Harrah
  • Patent number: 8866174
    Abstract: A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: October 21, 2014
    Assignee: Epistar Corporation
    Inventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao Hsing Chen
  • Patent number: 8847256
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first semiconductor layer comprising a plurality of vacant space parts, an active layer on the first semiconductor layer, and a second conductive type semiconductor layer on the active layer. Each of the plurality of air-lenses has a thickness less than that of the first semiconductor layer.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: September 30, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Hoon Han
  • Patent number: 8847263
    Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: September 30, 2014
    Assignee: Nichia Corporation
    Inventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
  • Patent number: 8847262
    Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: September 30, 2014
    Assignee: Nichia Corporation
    Inventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
  • Patent number: 8841691
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: September 23, 2014
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8835200
    Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: September 16, 2014
    Assignee: The Regents of the University of California
    Inventors: Hong Zhong, Anurag Tyagi, Kenneth J. Vampola, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8835959
    Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
    Type: Grant
    Filed: September 19, 2012
    Date of Patent: September 16, 2014
    Assignee: The Regents of the University of California
    Inventors: Shuji Nakamura, Steven P. DenBaars, Hirokuni Asamizu
  • Patent number: 8835958
    Abstract: An LED package includes a substrate, two electrodes, an LED die and a lens. The substrate includes a top surface, a bottom surface, a plurality of side surfaces interconnecting the top surface with the bottom surface, and two opposite notches depressed downward from lateral peripheral portions of the top surface. The two electrodes penetrate through the substrate, and each of the two electrodes is exposed at both the top surface and the bottom surface of the substrate. The LED die is arranged on the substrate and electrically connected to the two electrodes. The lens is arranged on the substrate and covers the LED die. The lens includes a contacting surface adjoining the top surface of the substrate, and two protrusions extending from lateral peripheral portions of the contacting surface and respectively embedded in the two notches.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: September 16, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventor: Yu-Lun Hsieh
  • Patent number: 8822247
    Abstract: An optical semiconductor element and a manufacturing method thereof that can improve the light extraction efficiency with maintaining the yield. The manufacturing method includes forming a plurality of recesses arranged at equal intervals along a crystal axis of a semiconductor film in a surface of the semiconductor film; and performing an etching process on the surface of the semiconductor film, thereby forming a plurality of protrusions arranged according to the arrangement form of the plurality of recesses and deriving from the crystal structure of the semiconductor film in the surface of the semiconductor film.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: September 2, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Tatsuma Saito
  • Patent number: 8816370
    Abstract: Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: August 26, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Patent number: 8796716
    Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: August 5, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
  • Patent number: 8797633
    Abstract: The present invention is directed to a display device assembly which comprises a display device and a luminance enhancement structure. The luminance enhancement structure is directly laminated onto an ITO layer with an adhesive. The assembly of the present invention provides improved performance of the luminance enhancement structure.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: August 5, 2014
    Assignee: SiPix Imaging, Inc.
    Inventors: Robert A. Sprague, Bryan Hans Chan, Craig Lin
  • Patent number: 8791479
    Abstract: Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: July 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dae Sung Kang
  • Patent number: 8791469
    Abstract: In a semiconductor light emitting element (1) having a sapphire substrate (100), and lower (210) and upper (220) semiconductor layers laminated on the sapphire substrate, the substrate includes a substrate top surface (113), a substrate bottom surface (114), first substrate side surfaces (111) and second substrate side surfaces (112); plural first (121a) and second (122a) cutouts are provided at a border between the first substrate side surface, the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface (213), first lower semiconductor side surfaces (211) and second lower semiconductor side surfaces (212); plural first projecting portions (211a) and plural first depressing portions (211b) are provided on the first lower semiconductor side surface; and plural second protruding portions (212a) and second flat portions (212b) are provided on the second lower semiconductor side surface.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: July 29, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hironao Shinohara, Kensuke Hirano
  • Patent number: 8791480
    Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: July 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Patent number: 8785952
    Abstract: A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: July 22, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dongwook Park
  • Patent number: 8779411
    Abstract: The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: July 15, 2014
    Assignee: Gwanju Institute of Science and Technology
    Inventors: Dong Seon Lee, Jae Phil Shim, Seong Ju Park, Min Hyeok Choe, Do Hyung Kim, Tak Hee Lee
  • Patent number: 8772815
    Abstract: A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: July 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8772803
    Abstract: A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: July 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Sang Youl Lee, June O Song, Kwang Ki Choi
  • Patent number: 8772792
    Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: July 8, 2014
    Assignee: Cree, Inc.
    Inventors: Steven P. DenBaars, Shuji Nakamura, Max Batres