Abstract: Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region.

Abstract: A silicon based photodetector and method of manufacturing the same are provided. The photodetector comprising: a silicon substrate; a buried oxide layer, above the silicon substrate; and a waveguide, above the buried oxide layer. The waveguide includes a silicon, Si, containing region and a germanium tin, GeSn, containing region, both located between a first doped region and a second doped region of the waveguide, thereby forming a PIN diode. The first doped region and the second doped region are respectively connected to first and second electrodes, such that the waveguide is operable as a photodetector.

Abstract: A display device includes a first display area and a second display area located on opposite sides of a display area. The display device includes first through third sub-pixels. The first through third sub-pixels are disposed in the first and second display areas. The first and second sub-pixels are arranged in a first column adjacent to a first boundary, and the third sub-pixels are arranged in a second column. The second and first sub-pixels are arranged in a third column adjacent to a second boundary, and the third sub-pixels are arranged in a fourth column. The third sub-pixels are arranged in a first column and a second column of the first sub-area. The first and second sub-pixels are arranged in a first column and a second column of the third sub-area. The first to third sub-pixels are not disposed in the second column of the first and third sub-areas.

Abstract: Under one aspect of the present invention, a monolithic sun sensor includes a photosensor; a spacer material disposed over the photosensor; and a patterned mask disposed over the spacer material and defining an aperture over the photosensor. The spacer material has a thickness selected such that the patterned mask casts a shadow onto the photosensor that varies as a function of the monolithic sun sensor's angle relative to the sun. The sun sensor may further include a substrate in which the photosensor is embedded or on which the photosensor is disposed. The spacer material may be transparent, and may include a layer of inorganic oxide, or a plurality of layers of inorganic oxide. The patterned mask may include a conductive material, such as a metal. The aperture may be lithographically defined, and may be square. The sun sensor may further include a transparent overlayer disposed over the patterned mask.

Abstract: A photoconductor comprising a layer stack with a semiconductor layer photoconductive for a predetermined wavelength range between two semiconductor boundary layers with a larger band gap than the photoconductive semiconductor layer on a substrate, wherein the semiconductor boundary layers comprise deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer, and two electrodes connected to the photoconductive semiconductor layer, for lateral current flow between the electrodes through the photoconductive semiconductor layer.

Abstract: A display is provided. The display includes a light emitting element, a filter layer and a photosensor. The filter layer is disposed on a side of the light emitting element. The filter layer includes a black filter. The photosensor is disposed corresponding with the black filter. The photosensor is used for detecting an invisible light from the black filter.

Abstract: An array of optical devices includes singlets diced or separated from a first diced surface and a second diced surface of a semiconductor wafer. Each singlet includes a single optical emitter or a single photosensitive semiconductor device. The singlets are identified as operationally fit before being arranged in corresponding features in a receiving region of a submount. The corresponding features of the submount are arranged to align and precisely control the pitch or separation distance between optical portions of a desired number of singlets. The use of operationally fit singlets dramatically increases production efficiency as it is no longer necessary to identify N contiguous operational optical devices in a semiconductor wafer to produce a precisely aligned array of N operational optical devices.

Abstract: A solid-state image pickup element 1 is structured so as to include: a semiconductor layer 2 having a photodiode formed therein, photoelectric conversion being carried out in the photodiode; a first film 21 having negative fixed charges and formed on the semiconductor layer 2 in a region in which at least the photodiode is formed; and a second film 22 having the negative fixed charges, made of a material different from that of the first film 21 having the negative fixed charges, and formed on the first film 21 having the negative fixed charges.

Abstract: A low noise infrared photo detector with a vertically integrated field effect transistor (FET) structure is formed without thermal diffusion. The FET structure includes a high sensitivity photo detector layer, a charge well layer, a transfer well layer, a charge transfer gate, and a drain electrode. In an embodiment, the photo detector layer and charge well are InGaAs and the other layers are InP layers.

Abstract: The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.

Abstract: A photpcoupler includes: a light emitting element; a first photodiode array; a second photodiode array; a third photo diode array; an enhancement-mode MOSFET; a first depletion-mode MOSFET; and a second depletion mode MOSFET. The light emitting element converts the input electrical signal into the optical signal. A drain current of the enhancement-mode MOSFET is supplied to the external load when the optical signal is ON. A drain current of the first depletion-mode MOSFET is supplied to the external load when the optical signal is OFF and a voltage passing through the second depletion-mode MOSFET switched to the ON state is supplied to the gate of the first depletion-mode MOSFET. And the drain current of the first depletion-mode MOSFET is larger than a drain current of the first depletion-mode MOSFET when a gate voltage of the first depletion-mode MOSFET is zero.

Abstract: A multi-chip package includes a lower substrate; at least two semiconductor chips stacked over the lower substrate and each defined with a via hole; an upper substrate coupled to a semiconductor chip positioned uppermost among the semiconductor chips; a light emitting part coupled to the lower substrate corresponding to the via hole; an electrowetting liquid lens coupled to a lower surface of the upper substrate for receiving a signal transferred from the light emitting part through the via hole; a light receiving part coupled to a sidewall of the via hole of each semiconductor chip configured to receive a signal from the electrowetting liquid lens.

Abstract: A semiconductor voltage transformation structure is provided. The semiconductor voltage transformation structure includes: a first electrode layer ; an electricity-to-light conversion layer formed on the first electrode layer; a second electrode layer formed on the electricity-to-light conversion layer; a first isolation layer formed on the second electrode layer; a third electrode layer formed on the first isolation layer; a light-to-electricity conversion layer formed on the third electrode layer; and a fourth electrode layer formed on the light-to-electricity conversion layer, in which the first isolation layer, the second electrode layer and the third electrode layer are transparent to a working light emitted by the electricity-to-light conversion layer.

Abstract: An optical system includes a silicon substrate, a 45-degree or 54.7-degree reflector formed in the silicon substrate, deeply etched double U-shape trenches formed in the silicon substrate, a thin film disposed on the reflector surface with total or partial optical refection, a top and bottom surface contacted p-i-n structure formed in the silicon substrate for optical power monitoring, a plurality of rectangular or wedge shaped spacers formed on top surface of the silicon substrate, and a surface emitting light source flip-chip bonded on the silicon substrate via the spacers.

Abstract: An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback.

Abstract: An X-ray detector including: a substrate that is divided into a light detection area and a non-detection area and includes a plurality of pixels; a photodiode disposed on the light detection area; a thin film transistor that is disposed on the non-detection area and is electrically connected to a lower portion of the photodiode; a plurality of wires that are electrically connected to the thin film transistor and are positioned on the non-detection area; at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires; a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; and a shielding part disposed between the at least one insulating layer and the scintillator layer to shield the non-detection area.

Abstract: A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region.

Abstract: A photosensor chip package structure comprises a substrate, a light-emitting chip and a photosensor chip including an ambient light sensing unit and a proximity sensing unit. The substrate has a first basin, a second basin and a light-guiding channel. The openings of the first and second basins respectively face different directions. One opening of the light-guiding channel and the opening of the first basin face the same direction. The other opening of the light-guiding channel interconnects with the second basin. The light-emitting chip is arranged in the first basin. The photosensor chip is arranged in the second basin. The light-guiding channel conducts the light generated by the light-emitting chip and the ambient light to the photosensor chip. The photosensor chip operates as soon as it receives the light generated by the light-emitting chip and/or the ambient light.

Abstract: A light-emitting device package and a method of manufacturing the light-emitting device package. The light-emitting device package includes a wiring substrate; a Zener diode mounted on a first region of the wiring substrate; a light-emitting device chip mounted on the first region and a second region of the wiring substrate; and a molding member for fixing at least a portion of the wiring substrate, wherein the Zener diode is embedded in the molding member.

Abstract: A display is provided. The display includes a light emitting element, a filter layer and a photosensor. The filter layer is disposed on a side of the light emitting element. The filter layer includes a black filter. The photosensor is disposed corresponding with the black filter. The photosensor is used for detecting an invisible light from the black filter.

Abstract: A structure comprises a first semiconductor substrate, a first bonding layer deposited on a bonding side the first semiconductor substrate, a second semiconductor substrate stacked on top of the first semiconductor substrate and a second bonding layer deposited on a bonding side of the second semiconductor substrate, wherein the first bonding layer is of a horizontal length greater than a horizontal length of the second semiconductor substrate, and wherein there is a gap between an edge of the second bonding layer and a corresponding edge of the second semiconductor substrate.

Abstract: A sensor package is provided having a light sensitive component and a light emitting component attached to a same substrate. Light from the light emitting component is emitted from the package through a first opening and reflected back into the package to the light sensitive component through a second opening in the package. A glass attachment is placed between the light emitting component and the light sensitive component. A portion of the glass is removed and filled with an opaque substance to prevent light travelling between the light emitting component and the light sensitive component in the package.

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract: A solid state imaging device according to one embodiment of the present invention includes a substrate with a solid state imaging element, a first impurity layer, a plurality of external electrodes, and a translucent substrate. The first impurity layer is formed on a back surface side of the substrate, and forms a pn junction with the substrate. The plurality of external electrodes is formed on the back surface of the substrate and is electrically connected to the solid state imaging element. The translucent substrate is fixed to the substrate.

Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.

Abstract: In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits.

Abstract: The present invention provides a lighting device, including: a second OLED layer formed on a window; a solar cell formed on the second OLED layer; and a first OLED layer formed on the solar cell.

Abstract: A light emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer.

Abstract: A light-emitting device having a through-hole cavity is disclosed. The optical device may contain a plurality of conductors, a light source die, a body and a transparent encapsulant material. The body may have a top surface and a bottom surface. A cavity is formed within the body extending from the bottom surface to the top surface and defining therein a bottom opening and a top opening, respectively. Optionally, the light-emitting device may comprise a lens. During manufacturing process, liquid or semi-liquid form transparent material is injected from the bottom surface into the cavity, encapsulating the light source die and forming a lens. The shape of the lens is defined by a mold aligned to the top opening of the body. In yet another embodiment, optical devices having a cavity or multiple cavities are disclosed. The optical devices may include a proximity sensor, an opto-coupler, an encoder and other similar sensors.

Abstract: An optical system includes a silicon substrate, a 45-degree or 54.7-degree reflector formed in the silicon substrate, deeply etched double U-shape trenches formed in the silicon substrate, a thin film disposed on the reflector surface with total or partial optical refection, a top and bottom surface contacted p-i-n structure formed in the silicon substrate for optical power monitoring, a plurality of rectangular or wedge shaped spacers formed on top surface of the silicon substrate, and a surface emitting light source flip-chip bonded on the silicon substrate via the spacers.

Abstract: An optoelectronic device is disclosed. The optoelectronic device may be employed as a single or multi-channel opto-coupler that electrically isolates one circuit from another circuit. The opto-coupler may include one or more premolded cavities with a light-coupling medium contained therein. Walls of the one or more premolded cavities advantageously help shape the light-coupling medium during manufacture, therefore, resulting in a light path with controlled shape and dimensions.

Abstract: According to one embodiment, a light emitting device includes a substrate, a light emitting element and connectors. The substrate has a surface and a back face, and power supply terminals are formed on the surface. The light emitting element is mounted on the surface of the substrate. The connector includes a contact portion coming into contact with the power supply terminal on the surface side of the substrate and a connector terminal having a wire connection portion projecting on the back face side of the substrate, and a power supply wire is connected to the wire connection portion of the connector terminal.

Abstract: According to an embodiment, a semiconductor device including a first body molded with a first resin, a second body molded with the first resin, and a third body molded with a second resin. The first body includes a first light emitting element, a primary lead, a first light receiving element, and a secondary lead. The second body includes a second light emitting element, a primary lead, a second light receiving element, and a secondary lead. The third body includes the first body and the second body. At least one common lead includes the primary leads or the secondary leads, and a portion extending between the first body and the second body, the portion being covered with a first thin film linked to the first body and a second thin film linked to the second body.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.

Abstract: An optoelectronic device assembly can include: a coated element and an optoelectronic device on the coated element. The coated element can include a thermoplastic substrate and a protective weathering layer. The thermoplastic substrate can include a bisphenol-A polycarbonate homopolymer and a polycarbonate copolymer, and wherein the polycarbonate copolymer is selected from a copolymer of tetrabromobisphenol A carbonate and BPA carbonate; a copolymer of 2-phenyl-3,3-bis(4-hydroxyphenyl)phthalimidine carbonate and BPA carbonate; a copolymer of 4,4?-(1-phenylethylidene) biphenol carbonate and BPA carbonate; a copolymer of 4,4?-(1-methylethylidene) bis[2,6-dimethyl-phenol]carbonate and BPA carbonate; and combinations comprising at least one of the foregoing. The protective weathering layer can include resorcinol polyarylate and polycarbonate.

Abstract: According to one embodiment, a semiconductor device includes an input lead, a light emitting element, an output lead, a light receiving element and a resin molded body. The input lead includes an input inner lead portion, an input outer lead portion and a first silver layer. The light emitting element is provided on the first silver layer. The output lead includes an output inner lead portion, an output outer lead portion and a second silver layer. The second silver layer includes an upper surface portion and a side surface portion. The light receiving element is provided on the second silver layer and is capable of receiving light. The output lead includes a cutting surface extending from the side surface portion of the second silver layer to the side surface of the output inner lead portion. The resin molded body covers the cutting surface.

Abstract: To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Abstract: A method for manufacturing a photocoupler includes: mounting light emitting devices and light receiving devices on a lead frame sheet; positioning the lead frame sheet with respect to a die by cutting off the one set of column portions from a linking portion and inserting a first pilot pin formed on the die into a second pilot hole; opposing the light emitting devices and the light receiving devices to each other; connecting the light emitting side coupling bars and the light receiving side coupling bars to each other on the die; forming a resin body so as to cover a pair of the light emitting device and the light receiving device; and cutting off the light emitting side lead frame portion from the light emitting column portion and cutting off the light receiving side lead frame portion from the light receiving column portion.

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Abstract: The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

Abstract: An integrated Sensing package structure includes a substrate made of IR blocking material. The substrate has a first receiving compartment and a second receiving compartment concavely formed on the top surface thereof. The first receiving compartment has a reflective layer formed on the surface of the inner wall thereof. A LED unit is disposed in the bottom portion of the first receiving compartment. A plurality of first conducting lines is electrically connected to the LED unit and extends to an outer surface of the substrate. An IR sensing chip is disposed in the second receiving compartment. A plurality of second conducting lines is electrically connected to the IR sensing chip and extends to an outer surface of the substrate. An IR block cover is covered on the top surface of the substrate, forming at least one opening corresponding to the IR sensing chip.

Abstract: A multi-chip package includes a lower substrate; at least two semiconductor chips stacked over the lower substrate and each defined with a via hole; an upper substrate coupled to a semiconductor chip positioned uppermost among the semiconductor chips; a light emitting part coupled to the lower substrate corresponding to the via hole; an electrowetting liquid lens coupled to a lower surface of the upper substrate for receiving a signal transferred from the light emitting part through the via hole; a light receiving part coupled to a sidewall of the via hole of each semiconductor chip configured to receive a signal from the electrowetting liquid lens.

Abstract: A method of growing an epitaxial silicon layer is provided. The method comprising providing a substrate including an oxygen-terminated silicon surface and forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface. Additionally, the method includes forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface through atomic-layer deposition (ALD) epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. The second hydrogen-terminated silicon surface is capable of being added one or more layer of silicon through ALD epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. In one embodiment, the method is applied for making devices with thin-film transistor (TFT) floating gate memory cell structures which is capable for three-dimensional integration.

Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: An optical module package structure includes a light-emitting chip and a light sensor chip respectively installed in a first cavity and a second cavity in a substrate, a reflective layer coated on the periphery of the first cavity, two packaging adhesive structures respectively molded in the first cavity and the second cavity to encapsulate the light-emitting chip and the light sensor chip respectively, and a lid integrally formed on the substrate to enhance the airtightness of the whole optical module package structure.

Abstract: A semiconductor package structure includes a package substrate, at least a chip, solder balls, a light emitting/receiving device, a optical intermediary device and an optical transmission device. The package substrate has a first surface, a second surface, a circuit and solder ball pads, wherein each solder ball pad is electrically connected to the circuit. The chip is disposed on the first surface and electrically connected to the circuit. The solder balls are respectively disposed on the solder ball pads. The light emitting/receiving device is disposed on the package substrate and electrically connected to the circuit. The optical intermediary device is disposed above the light emitting/receiving device. The optical transmission device is inserted in the optical intermediary device, wherein a light emitting by the light emitting/receiving device is emitted to the optical transmission device via the optical intermediary device so that an optical signal is transmitted through the optical transmission device.

Abstract: Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis.

Abstract: Wavelength converters for solid state lighting devices, and associated systems and methods. A system in accordance with a particular embodiment includes a solid state radiative semiconductor structure having a first region and a second region. The first region is positioned to receive radiation at a first wavelength and has a first composition and an associated first bandgap energy. The second region is positioned adjacent to the first region to receive energy from the first region and emit radiation at a second wavelength different than the first wavelength. The second region has a second composition different than the first composition, and an associated second bandgap energy that is less than the first bandgap energy.

Abstract: A proximity sensor for use in a portable computing device is described. In particular various embodiments of a proximity sensor which fit in an extremely small portion of a cellular phone, and accurately determine the presence of a user's head in close proximity to a surface of the cellular phone.